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Formation of nonmagnetic phases in Fe/Si interface / S. N. Varnakov [et al.] // Workshop "Trends in Nanomechanics and Nanoengineering" : book of abstracts / предс. сем. K. S. Aleksandrov ; зам. предс. сем.: G. S. Patrin, S. G. Ovchinnikov ; чл. лок. ком.: N. N. Kosyrev, A. S. Fedorov [et al]. - 2009. - P. 21

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Доп.точки доступа:
Aleksandrov, K. S. \предс. сем.\; Александров, Кирилл Сергеевич; Patrin, G. S. \зам. предс. сем.\; Патрин, Геннадий Семёнович; Ovchinnikov, S. G. \зам. предс. сем.\; Овчинников, Сергей Геннадьевич; Kosyrev, N. N. \чл. лок. ком.\; Косырев, Николай Николаевич; Fedorov, A. S. \чл. лок. ком.\; Федоров, Александр Семенович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Komogortsev, S. V.; Комогорцев, Сергей Викторович; Ovchinnikov, S. G.; Bartolome, J.; Sese, J.; "Trends in Nanomechanics and Nanoengineering", workshop(2009 ; Aug. ; 24-28 ; Krasnoyarsk); Сибирский федеральный университет; Институт физики им. Л.В. Киренского Сибирского отделения РАН
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Spectral dependences of transmittance and polarizing ability of stretched PDLC films with homogeneous and inhomogeneous interface anchoring / M. N. Krakhalev [et al.] // EuroDisplay 2019 : book of abstracts of International conference. - 2019. - Ст. O-9. - P. 25. - Cited References: 2

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Доп.точки доступа:
Loiko, V. A.; Лойко В. А.; Zyryanov, V. Ya.; Зырянов, Виктор Яковлевич; Konkolovich, A. V.; Конколович А. В. ; Miskevich, A. A.; Мискевич А. А.; Prishchepa, O. O.; Прищепа, Оксана Олеговна; Shabanov, A. V.; Шабанов, Александр Васильевич; Krakhalev, M. N.; Крахалев, Михаил Николаевич; EuroDisplay international conference(2019 ; Sept. ; 16-20 ; Minsk, Belarus); Society for Information Displays; Белорусский государственный университет информатики и радиоэлектроники
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    Magnetoimpedance Effect in a SOI-Based Structure / D. A. Smolyakov [et al.] // Semiconductors. - 2019. - Vol. 53, Is. 14. - P. 98-100, DOI 10.1134/S1063782619140215. - Cited References: 10. - This study was supported by the Russian Foundation for Basic Research, project no. 18-32-00035. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70) and Fundamental research program of the Presidium of the RAS no. 32 “Nanostructures: physics, chemistry, biology, basics of technologies”. . - ISSN 1063-7826. - ISSN 1090-6479
   Перевод заглавия: Эффект магнитоимпеданса в структуре на основе КНИ
Рубрики:
NANOSTRUCTURE DEVICES
Кл.слова (ненормированные):
magnetoimpedance -- spintronics -- silicone on insulator -- nanosized semiconductors -- interface states
Аннотация: This paper presents the results of the study the transport properties of the SOI-based structure. Measurements were carried out on an alternating current with an external magnetic field in a wide temperature range. The influence of the magnetic field was found. We associate this effect with the influence on the surface states located at the interface, this appears as a change of the energy of their levels. This effect is enhanced by the nanoscale of the silicon channel.

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Держатели документа:
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036 Russia
Siberian State University of Science and Technology, Krasnoyarsk, 660014 Russia

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич
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Chiral optical Tamm states at the interface between an all-dielectric polarization-preserving anisotropic mirror and a cholesteric liquid crystal / N. V. Rudakova [et al.] // Crystals. - 2019. - Vol. 9, Is. 10. - Ст. 502, DOI 10.3390/cryst9100502. - Cited References: 48. - Russian Foundation for Basic Research (RFBR), Russia, grant No. 19-52-52006; Ministry of Science and Technology, Taiwan (MOST), grant No. 106-2923-M-009-002-MY3; M.V.P. thanks RFBR and KRSTSF for the research Project No. 18-42-243025. . - ISSN 2073-4352
Кл.слова (ненормированные):
Optical Tamm state -- Cholesteric liquid crystal -- Polarization-preserving anisotropic mirror
Аннотация: As a new localized state of light, the chiral optical Tamm state exists at the interface between a polarization-retaining anisotropic mirror and a substance with optical activity. Considering a hybrid structure comprising a metal-free polarization-preserving mirror and a cholesteric liquid crystal, we highlight the high Q factor arising from the all-dielectric framework. The intensity of localized light decreases exponentially with increasing distance from the interface. The penetration of the field into the cholesteric liquid crystal is essentially prohibited for wavelengths lying in the photonic bandgap and close to the cholesteric pitch length. The dielectric mirror has its own photonic bandgap. The energy transfer along the interface can be effectively switched off by setting the tangential wave vector to zero. The spectral behavior of the chiral optical Tamm state is observed both as reflection and transmission resonance. This Fano resonance is analogous to the Kopp-Genack effect. Our analytics are well in line with precise calculations, which may pave a new route for the future development of intelligent design for laser and sensing applications.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Institute of Imaging and Biomedical Photonics, College of Photonics, National Chiao Tung University, Tainan, 71150, Taiwan

Доп.точки доступа:
Rudakova, N. V.; Рудакова, Наталья Викторовна; Timofeev, I. V.; Тимофеев, Иван Владимирович; Bikbaev, R. G.; Бикбаев, Рашид Гельмединович; Pyatnov, M. V.; Пятнов, Максим Владимирович; Vetrov, S. Ya.; Ветров, Степан Яковлевич; Lee, W.
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Probing proximity effects in the ferromagnetic semiconductor EuO / D. V. Averyanov, A. M. Tokmachev, O. E. Parfenov [et al.] // Appl. Surf. Sci. - 2019. - Vol. 488. - P. 107-114, DOI 10.1016/j.apsusc.2019.05.191. - Cited References: 57. - This work is partially supported by NRC "Kurchatov Institute" (synthesis), the Russian Foundation for Basic Research [grant 19-07-00249] (magnetization measurements), and the Russian Science Foundation [grant 19-19-00009] (transport measurements). The measurements have been carried out using the equipment of the resource centers of electrophysical, laboratory X-ray, and electron microscopy techniques of NRC "Kurchatov Institute". The authors also gratefully acknowledge the beamtime allocation (MA-3167) by the ESRF. . - ISSN 0169-4332. - ISSN 1873-5584

РУБ Chemistry, Physical + Materials Science, Coatings & Films + Physics, Applied + Physics, Condensed Matter
Рубрики:
INTERFACE
   FIELD
   POLARIZATION
   INSULATOR
   SILICON
Кл.слова (ненормированные):
EuO -- Gd -- Ferromagnetism -- Proximity effect
Аннотация: Ferromagnetic insulators are widely employed to induce magnetic phenomena in adjacent layers via proximity effect. This approach could make non-magnetic materials (ranging from silicon to graphene) available for spintronic applications. Eu chalcogenides, EuO in particular, are highly efficient spin generators but suffer from low Curie temperatures. Here, experiments aimed at T-C increase in EuO by its integration with the ferromagnetic metal Gd are reported. The epitaxial bilayers Gd/EuO are synthesized on different substrates and characterized by a combination of diffraction and microscopy techniques. Their magnetic structure - established with magnetization and transport measurements as well as element-selective X-ray magnetic circular dichroism study - comprises coupled magnetic orders of EuO and Gd. EuO is robust against proximity effects - its T-C is still low, increased at most by a few tens of K. Nevertheless, the results encourage further studies of proximity-enhanced ferromagnetism to extend the range of applications of ultrathin layers of EuO in spintronics.

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Держатели документа:
Natl Res Ctr Kurchatov Inst, Kurchatov Sq 1, Moscow 123182, Russia.
ESRF, F-38054 Grenoble, France.

Доп.точки доступа:
Averyanov, D. V.; Tokmachev, Andrey M.; Parfenov, Oleg E.; Karateev, Igor A.; Sokolov, I. S.; Taldenkov, Alexander N.; Platunov, M. S.; Платунов, Михаил Сергеевич; Wilhelm, Fabrice; Rogalev, Andrei; Storchak, V. G.; NRC "Kurchatov Institute"; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR) [19-07-00249]; Russian Science FoundationRussian Science Foundation (RSF) [19-19-00009]
}
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    Polar anchoring energy and tilt angle measured by magneto-optical technique in nematic doped with ionic surfactant / A. M. Parshin, V. S. Sutormin, V. Y. Zyryanov, V. F. Shabanov // Liq. Cryst. - 2020. - Vol. 47, Is. 12. - P. 1825-1831, DOI 10.1080/02678292.2020.1733683. - Cited References: 32 . - ISSN 0267-8292. - ISSN 1366-5855
   Перевод заглавия: Полярная энергия сцепления и угол наклона измеренные магнитооптической методикой в нематике допированном ионным сурфактантом

РУБ Chemistry, Multidisciplinary + Crystallography + Materials Science, Multidisciplinary
Рубрики:
LIQUID-CRYSTAL
   TEMPERATURE-DEPENDENCE
   INTERFACE
   ADSORPTION
Кл.слова (ненормированные):
Nematic -- ionic surfactant -- tilt angle -- anchoring energy -- magnetooptics
Аннотация: The surface anchoring of a nematic doped with the ionic surfactant has been investigated and compared with the one in the undoped sample. The director tilt angle at the substrates coated with the orienting polymer film has been determined by the null method in a rotating magnetic field. The Frederiks transition in a magnetic field has been chosen as a convenient technique to measure the polar anchoring energy Wθ. The temperature dependences of anchoring energy have been obtained for the various nematic cells. The Wθ values for nematic doped with the ionic surfactant are less than for the undoped one. The factors affecting the measurement accuracy have been discussed. The accuracy is higher for the thinner nematic layers and weaker anchoring energy.

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Держатели документа:
Russian Acad Sci, Siberian Branch, Fed Res Ctr,Krasnoyarsk Sci Ctr, Kirensky Inst Phys, Krasnoyarsk, Russia.
Siberian Fed Univ, Krasnoyarsk, Russia.

Доп.точки доступа:
Parshin, A. M.; Паршин, Александр Михайлович; Sutormin, V. S.; Сутормин, Виталий Сергеевич; Zyryanov, V. Ya.; Зырянов, Виктор Яковлевич; Shabanov, V. F.; Шабанов, Василий Филиппович
}
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Tarasov, I. A.
α-FeSi2 as a buffer layer for β-FeSi2 growth: analysis of orientation relationships in silicide/Silicon, silicide/silicide heterointerfaces / I. A. Tarasov, I. A. Bondarev, A. I. Romanenko // J. Surf. Ingestig. - 2020. - Vol. 14, Is. 4. - P. 851-861, DOI 10.1134/S1027451020040357. - Cited References: 74. - The work was supported by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research project no. 18-42-243013. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70) . - ISSN 1027-4510. - ISSN 1819-7094

РУБ Physics, Condensed Matter
Рубрики:
β-FeSi2 thin-films
Thermal-expansion
Phase-transformation
Кл.слова (ненормированные):
iron silicide -- interface structure -- orientation relationship -- near coincidence site lattice -- edge-to-edge matching -- plane-to-plane matching
Аннотация: In this manuscript, we attempt to clarify the capability of utilisation of α-FeSi2 nanocrystals as a buffer layer for growth of monocrystalline/high-quality β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Iron silicides-based nanostructures have a wide spectrum of possible industrial applications in different fields. Mainly, interest in these functional materials is caused by their ecological safety and Earth’s core abundance that give us the opportunity for greener future with highly effective electronic devices. β-FeSi2 phase due to its allowed direct transition with energy close to 0.87 eV can be used as active material in light emission diodes (LED). Utilisation of buffer layers between silicon substrate and give one more tool to engineer the band structure of semiconducting β‑FeSi2 phase. We attempt to clarify the capability of the utilisation of the α-FeSi2 phase as a buffer layer for the growth of β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Possible β-FeSi2/α-,γ-,s-FeSi2/Si orientation relationships (ORs) and habit planes were examined with crystallogeometrical approaches and compared with β-FeSi2/Si ones. The lowest interplanar and interatomic spacing misfits between silicon lattice and a silicide one are observed for the pair of s-FeSi2{011}[200]/Si{022}[100] at room temperature and equal to –0.57%. The least interplanar and interatomic spacing misfit of 1.7 and 1.88%, respectively, for β-FeSi2/Si, can be decreased as low as –0.67 (interplanar) and 0.87 (interatomic) % by placing an α-FeSi2 layer between silicon and β-FeSi2 phase. It is stated that the growth of metastable γ-FeSi2 is also favourable on silicon due to low interplanar and interatomic spacing misfit (–0.77%) and a higher density of NCS in comparison with s-FeSi2. Design and technological procedure for the synthesis of possible β-FeSi2/α-FeSi2/Si heterostructure have been proposed based on the results obtained.

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Держатели документа:
RAS, Kirensky Inst Phys, Fed Res Ctr, KSC,SB, Krasnoyarsk 660036, Russia.
RAS, Nikolaev Inst Inorgan Chem, SB, Novosibirsk 630090, Russia.

Доп.точки доступа:
Bondarev, I. A.; Бондарев, Илья Александрович; Romanenko, A. I.; Тарасов, Иван Анатольевич; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science [18-42-243013]; Ministry of Education and Science of the Russian FederationMinistry of Education and Science, Russian Federation; Siberian Branch of the Russian Academy of SciencesRussian Academy of Sciences [II.8.70]
}
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Growth of α-FeSi2 nanocrystals on silicon surface: the impact of gold and the Si/Fe flux ratio, the origin and the prediction of α/Si orientation relationships and interface structures / Ivan Tarasov, Maxim Visotin, Sergey Varnakov and Sergey Ovchinnikov // 1st FunMAX Workshop 2020 : Book of Abstracts. - 2020. - P. 11. - Cited References: 2. - The study was carried out with the financial support of the Government of the Russian Federation within the framework of a grant for the creation of world-class laboratories (Agreement No. 075-15-2019-1886).

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Держатели документа:
Kirensky Institute of Physics

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Visotin, M. A.; Высотин, Максим Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; International Online Workshop on the properties of Functional MAX-materials(1 ; 2020 ; Aug ; 10-12 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН
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Chiral optical Tamm states at the interface between a Dye-doped cholesteric liquid crystal and an anisotropic mirror / A. Yu. Avdeeva, S. Ya. Vetrov, R. G. Bikbaev [et al.] // Materials. - 2020. - Vol. 13, Is. 15. - Ст. 3255, DOI 10.3390/ma13153255. - Cited References: 44. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project No. 19-42-240004 and by Russian Foundation for Basic Research, project No. 19-52-52006 . - ISSN 1996-1944

РУБ Materials Science, Multidisciplinary
Рубрики:
PHASE
POLARIZATION
MODES
Кл.слова (ненормированные):
localization of light -- photonic crystals -- chirality -- dye-doped cholesteric liquid crystal -- optical Tamm states -- resonant frequency dispersion
Аннотация: The resonant splitting of optical Tamm state numerically is demonstrated. The Tamm state is localized at the interface between a resonant chiral medium and a polarization-preserving anisotropic mirror. The chiral medium is considered as a cholesteric liquid crystal doped with resonant dye molecules. The article shows that the splitting occurs when dye resonance frequency coincides with the frequency of the Tamm state. In this case the reflectance, transmittance, and absorptance spectra show two distinct Tamm modes. For both modes, the field localization is at the interface between the media. The external field control of configurable optical and structural parameters paves the way for use in tunable chiral microlaser.

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Публикация в сборнике Soft photonic crystals and metamaterials [Текст] / ed., pref.: I. V. Timofeev, W. Lee, 2022. - VII с. ; 127 с. (Введено оглавление)

Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Avdeeva, A. Yu.; Авдеева, Анастасия Юрьевна; Vetrov, S. Ya.; Ветров, Степан Яковлевич; Bikbaev, R. G.; Бикбаев, Рашид Гельмединович; Pyatnov, M. V.; Пятнов, Максим Владимирович; Rudakova, N. V.; Рудакова, Наталья Викторовна; Timofeev, I. V.; Тимофеев, Иван Владимирович; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [19-42-240004]; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR) [19-52-52006]
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10.

Altunin, R. R.
Effect of the structural properties on the electrical resistivity of the Al/Ag thin films during the solid-state reaction / R. R. Altunin, E. T. Moiseenko, S. M. Zharkov // Phys. Solid State. - 2020. - Vol. 62, Is. 4. - P. 708-713, DOI 10.1134/S1063783420040034. - Cited References: 43. - This study was supported by the Russian Science Foundation, project no. 18-13-00080. . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter
Рубрики:
LIGHT-EMITTING-DIODES
   PHASE-FORMATION
   AG
   AL
   DIFFUSION
   SUPPRESSION
   INTERFACE
   SURFACE
   GROWTH
   HEAT
Кл.слова (ненормированные):
thin films -- phase formation -- Al/Ag -- solid-state reaction; -- electron diffraction -- resistivity
Аннотация: Based on the results of in situ electron diffraction study of the solid-state reaction and electrical resistivity measurements on the Al/Ag thin films with an atomic ratio of Al : Ag = 1 : 3, the temperature of the reaction onset has been established and a model of the structural phase transitions has been proposed. The solid-state reaction begins at 70°C with the formation of the Al–Ag solid solution at the interface between the aluminum and silver nanolayers. It has been found that, in the course of the reaction, the intermetallic compounds γ-Ag2Al → μ-Ag3Al are successively formed. It is shown that the possibility of the formation of the μ‑Ag3Al phase during the solid-state reaction in the Al/Ag thin films depends on the aluminum-to-silver ratio, while the formation of the μ-Ag3Al phase begins only after all fcc aluminum has reacted.

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Публикация на русском языке Алтунин Р. Р. Влияние структурных свойств на электросопротивление тонких пленок Al/Ag в процессе твердофазной реакции [Текст] / Р. Р. Алтунин, Е. Т. Моисеенко, С. М. Жарков // Физ. тверд. тела. - 2020. - Т. 62 Вып. 4. - С. 621-626

Держатели документа:
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Moiseenko, E. T.; Zharkov, S. M.; Жарков, Сергей Михайлович; Russian Science FoundationRussian Science Foundation (RSF) [18-13-00080]
}
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11.

Prediction of orientation relationships and interface structures between α-, β-, γ-FeSi2 and Si phases / M. A. Visotin, I. A. Tarasov, A. S. Fedorov [et al.] // Acta Crystallogr. B. - 2020. - Vol. 76. - P. 469-482, DOI 10.1107/S2052520620005727. - Cited References: 85. - The following funding is acknowledged: Russian Science Foundation (grant No. 16-13-00060-Pi). . - ISSN 2052-5206

РУБ Chemistry, Multidisciplinary + Crystallography
Рубрики:
THERMAL-EXPANSION
   BETA-FESI2 FILMS
   GROWTH
   SILICON
   DIFFRACTION
Кл.слова (ненормированные):
interface structure -- structure prediction -- orientation relationship -- near-coincidence site -- edge-to-edge matching -- iron silicide -- DFT calculations -- thermal expansion
Аннотация: A pure crystallogeometrical approach is proposed for predicting orientation relationships, habit planes and atomic structures of the interfaces between phases, which is applicable to systems of low-symmetry phases and epitaxial thin film growth. The suggested models are verified with the example of epitaxial growth of α-, γ- and β-FeSi2 silicide thin films on silicon substrates. The density of near-coincidence sites is shown to have a decisive role in the determination of epitaxial thin film orientation and explains the superior quality of β-FeSi2 thin grown on Si(111) over Si(001) substrates despite larger lattice misfits. Ideal conjunctions for interfaces between the silicide phases are predicted and this allows for utilization of a thin buffer α-FeSi2 layer for oriented growth of β-FeSi2 nanostructures on Si(001). The thermal expansion coefficients are obtained within quasi-harmonic approximation from the DFT calculations to study the influence of temperature on the lattice strains in the derived interfaces. Faster decrease of misfits at the α-FeSi2(001)||Si(001) interface compared to γ-FeSi2(001)||Si(001) elucidates the origins of temperature-driven change of the phase growing on silicon substrates. The proposed approach guides from bulk phase unit cells to the construction of the interface atomic structures and appears to be a powerful tool for the prediction of interfaces between arbitrary phases for subsequent theoretical investigation and epitaxial film synthesis.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Visotin, M. A.; Высотин, Максим Александрович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Fedorov, A. S.; Федоров, Александр Семенович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Russian Science FoundationRussian Science Foundation (RSF) [16-13-00060-Pi]
}
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12.

Chiral optical Tamm states at the interface between a cholesteric and an all-dielectric polarization-preserving anisotropic mirror / N. V. Rudakova [et al.] // Abstracts of 27th International Liquid Crystal Conference (ILCC 2018). - 2018. - Ст. 4-D-12. - Cited References: 3

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Доп.точки доступа:
Rudakova, N. V.; Timofeev, I. V.; Тимофеев, Иван Владимирович; Bikbaev, R. G.; Vetrov, S. Ya.; Ветров, Степан Яковлевич; Lee, W.; International Liquid Crystal Conference(27 ; 2018 ; July ; 22-27 ; Kyoto, Japan)
}
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13.

    Влияние ионного сурфактанта на энергию сцепления жидкого кристалла с поверхностью, исследованное с использованием магнитных пороговых полей перехода Фредерикса / А. М. Паршин [и др.] // Жидк. кристаллы и их практич. использ. - 2018. - Т. 18, № 3. - С. 59-66 ; Liq. Cryst. Appl., DOI 10.18083/LCAppl.2018.3.59. - Библиогр.: 25. - В. С. Сутормин благодарен РФФИ за поддержку исследований по гранту № 16-32-60036 мол_а_дк. . - ISSN 1991-3966. - ISSN 2499-9644
   Перевод заглавия: Influence of ionic surfactant on the anchoring energy of liquid crystal with a surface investigated using magnetic threshold fields of Freedericksz transition

РУБ Crystallography
Рубрики:
WALL INTERFACE
   TEMPERATURE-DEPENDENCE
   NEMATIC DROPLETS
   ADSORPTION
Кл.слова (ненормированные):
нематический жидкий кристалл -- ионный сурфактант -- энергия сцепления -- магнитное поле -- переход Фредерикса -- nematic liquid crystal -- ionic surfactant -- anchoring energy -- magnetic field -- Freedericksz transition
Аннотация: Исследовано сцепление нематического жидкого кристалла 5ЦБ и 5ЦБ, допированного ионным сурфактантом ЦТАБ, в ячейках с плоскопараллельными ограничивающими поверхностями. Получены зависимости интенсивности проходящего лазерного излучения от величины магнитного поля для ячеек с различными толщинами слоя нематика при различных температурах. Из пороговых полей перехода Фредерикса определены значения полярной энергии сцепления жидкого кристалла с поверхностью. Изучено влияние ионного сурфактанта на энергию сцепления, установлено, что добавление в объем жидкого кристалла ионного сурфактанта ведет к ее ослаблению. Проведен анализ точности определения энергии сцепления на основе выражения, следующего из соотношения Рапини – Популара. Показано, что лучшее экспериментальное разрешение энергии сцепления достигается при использовании тонких слоев нематика, более сильных магнитных полей, а также слабого сцепления молекул жидкого кристалла с поверхностью.
The coupling of nematic liquid crystal 5CB and 5CB doped with ionic surfactant CTAB in the cells with plane parallel interfaces was studied. For the cells with the varied nematic layer thickness at different temperatures, the dependencies of the passed laser radiation intensity on the magnetic field were obtained. From the threshold fields of Freedericksz transition, the polar anchoring energy of the liquid crystal to the surface was determined. The effect of the ionic surfactant on the anchoring energy was studied and it was found that the addition of the ionic surfactant to liquid crystal weakens the anchoring energy. The analysis of the accuracy of the anchoring energy determination based on the expression following from the Rapini - Popular relation was carried out. It was shown that the best experimental resolution of the anchoring energy is achieved when the thin nematic layers, stronger magnetic fields and weak anchoring of the liquid crystal molecules with the surface are used.

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Держатели документа:
Институт физики им. Л. В. Киренского, Федеральный исследовательский центр «Красноярский научный центр Сибирского отделения Российской академии наук», Академгородок, 50, 660036 Красноярск, Россия
Сибирский Федеральный университет, пр. Свободный, 79, 660041 Красноярск, Россия

Доп.точки доступа:
Паршин, Александр Михайлович; Parshin, A. M.; Сутормин, Виталий Сергеевич; Sutormin, V. S.; Зырянов, Виктор Яковлевич; Zyryanov, V. Ya.; Шабанов, Василий Филиппович; Shabanov, V. F.

}
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14.

Bikbaev, R. G.
Optical Tamm states at the interface between a photonic crystal and a gyroid layer / R. G. Bikbaev, S. Y. Vetrov, I. V. Timofeev // J. Opt. Soc. Am. B. - 2017. - Vol. 34, Is. 10. - P. 2198-2202, DOI 10.1364/JOSAB.34.002198. - Cited References:40. - Russian Foundation for Basic Research (RFBR), Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund (16-42-243065, 17-42-240464). . - ISSN 0740-3224. - ISSN 1520-8540

РУБ Optics
Рубрики:
RESONANCE NANOCOMPOSITE LAYER
BUTTERFLY WING SCALES
MODES
Аннотация: The spectral properties of a one-dimensional photonic crystal bounded by an absorbing plasmonic gyroid layer are investigated. The gyroid material is a foam-like metallic three-dimensionally periodic curved film with zero mean curvature at every point. We calculate the transmittance and reflectance spectra at the normal and oblique light incidence. The possibility of the Tamm state formation at the interface between a photonic crystal and a plasmonic gyroid layer caused by the negative real part of the gyroid permittivity is demonstrated for the first time. Specific features of field localization at the Tamm state frequencies are discussed. It is shown that the spectral and polarization properties of the optical Tamm states are highly sensitive to the change in the angle of incidence and in the refractive index of a medium filling the gyroid cavities.

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Держатели документа:
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Lab Nonlinear Opt & Spect, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Vetrov, S. Ya.; Ветров, Степан Яковлевич; Timofeev, I. V.; Тимофеев, Иван Владимирович; Бикбаев, Рашид Гельмединович; Russian Foundation for Basic Research (RFBR), Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-243065, 17-42-240464]
}
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15.

A key role of tensile strain and surface termination in formation and properties of La0.7Sr0.3MnO3 composites with carbon nanotubes / E. A. Kovaleva [et al.] // Comput. Mater. Sci. - 2017. - Vol. 139. - P. 125-131, DOI 10.1016/j.commatsci.2017.07.021. - Cited References: 39. - This work was supported by National Research Foundation of Republic of Korea under Grant No. NRF-2017R1A2B4004440 and the government contract of the Ministry of Education and Science of the Russian Federation to Siberian Federal University (Grant No. 16.1455.2017/PCh). The authors would like to thank Joint Supercomputer Center of RAS, Moscow; Center of Equipment for Joint Use of Siberian Federal University, Krasnoyarsk; and Information Technology Centre, Novosibirsk State University for providing the access to their supercomputers. P.B.S gratefully acknowledges the financial supports of the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST «MISiS» (No. К2-2017-001) and RFBR, according to the research project No. 16-32-60138 mol_a_dk. E.A. Kovaleva would also like to acknowledge the program of the President of Russian Federation for Leading Scientific Schools Support (Grant No. 2016 NSh-7559.2016.2). . - ISSN 0927-0256
Кл.слова (ненормированные):
Carbon nanotubes -- LSMO -- Interface -- Spin polarization
Аннотация: Atomic and electronic structure of LSMO-based composites with carbon nanotubes were studied by means of density functional theory with respect to the termination of LSMO surface. The deformation of the tubes caused by the lattice mismatch with the substrate leads to a major change in their electronic structure. The surface terminated with Mn-O layer provides much stronger interaction with carbon nanotubes than Sr-O terminated one does. The interaction with transition metal atoms is essential for spin polarization of the nanotube while no spin injection was observed for Sr-O-supported tubes. © 2017 Elsevier B.V.

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Держатели документа:
Siberian Federal University, 79 Svobodny pr., Krasnoyarsk, Russian Federation
L.V. Kirensky Institute of Physics, 50 Akademgorodok, Krasnoyarsk, Russian Federation
Kyungpook National University, 80 Daehakro, Bukgu, Daegu, South Korea
National University of Science and Technology MISiS, 4 Leninskiy prospekt, Moscow, Russian Federation

Доп.точки доступа:
Kovaleva, E. A.; Kuzubov, A. A.; Кузубов, Александр Александрович; Avramov, P. V.; Kholtobina, A. S.; Kuklin, A. V.; Куклин, Артем Валентинович; Tomilin, F. N.; Томилин, Феликс Николаевич; Sorokin, P. B.
}
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16.

Chernichenko, A. V.
Study the nI-gE interface effect on magnetic properties of the Ni/Ge layered films / A. V. Chernichenko, Yu. E. Samoshkina // Moscow International Symposium on Magnetism (MISM-2017) : 1-7 July 2017 : book of abstracts. - 2017. - Ст. 2PO-I1-45. - P. 274

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Доп.точки доступа:
Samoshkina, Yu. E.; Самошкина, Юлия Эрнестовна; Moscow International Symposium on Magnetism(7 ; 2017 ; Jul. ; Moscow); Московский государственный университет им. М.В. ЛомоносоваРоссийский фонд фундаментальных исследований
Нет сведений об экземплярах (Источник в БД не найден)
}
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17.

Influence of metal magnetic state and metal-insulator-semiconductor structure composition on magnetoimpedance effect caused by interface states / D. A. Smolyakov [et al.] // Thin Solid Films. - 2019. - Vol. 671. - P. 18-21, DOI 10.1016/j.tsf.2018.12.026. - Cited References: 15. - This study was supported by the Russian Foundation for Basic Research , project no. 18-32-00035 and supported in part by the Russian Foundation for Basic Research , Government of the Krasnoyarsk Territory, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities, project no. 18-42-243022, and the Ministry of Education and Science of the Russian Federation and the Siberian Branch of the Russian Academy of Sciences , project II.8.70, and the Presidium of the Russian Academy of Sciences , Fundamental Research Program no. 32 «Nanostructures: Physics, Chemistry, Biology, Basics of Technologies». . - ISSN 0040-6090
Кл.слова (ненормированные):
Magnetoimpedance -- Spintronics -- Metal/insulator/semiconductor structures -- Nanosized semiconductors
Аннотация: This article presents the results of a study of the transport properties of metal/insulator/semiconductor (MIS) hybrid structures in alternating current (ac) mode. We prepared a series of samples with different layers of metal, insulator, and semiconductor. We prepared a series of samples with different layers of metal, insulator and semiconductor. Ferromagnetic Fe and non-magnetic Cu and Mn were chosen as metals, the insulators were SiO2 and Al2O3, and n- and p-type Si substrates were used as semiconductors. Temperature dependence of the real part of the impedance showed peculiar peaks below 40К for different combinations of metals, insulators and semiconductors. For all samples the effect of the magnetic field on the transport properties was studied. At low temperatures, the magnetic field shifts peaks toward higher temperatures. Metal magnetic state does not significantly affect this phenomenon. Changing the type of the insulator and its thickness also did not cause any significant effect. However, the effect was observed for samples with different composition. Moreover, the type of conductivity of the substrate, as well as the type of metal, determines the value of magnetoimpedance. The main role in the magnetoimpedance effect is played by recharge of the energy states localized at the insulator/semiconductor interface. This mechanism allows obtaining a MI effect even in “nonmagnetic” MIS structures; magnetoimpedance can be either positive or negative, depending on temperature and frequency. We suggest that the observed ac magnetotransport phenomena could be used for creating magnetic field sensors, working on new principles.

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Держатели документа:
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Siberian State University of Science and Technology, Krasnoyarsk, 660014, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Masyugin, A. N.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Bondarev, I. A.; Бондарев, Илья Александрович; Kosyrev, N. N.; Косырев, Николай Николаевич; Volkov, N. V.; Волков, Никита Валентинович
}
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18.

Chiral optical Tamm state at the interface between multilayer polarization-preserving anisotropic mirror and cholesteric / N. V. Rudakova [et al.] // The 4th Asian Conference on Liquid Crystals (ACLC 2019) : abstracts. - 2019. - P. . - Библиогр.: 4

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Доп.точки доступа:
Rudakova, N. V.; Рудакова, Наталья Викторовна; Timofeev, I. V.; Тимофеев, Иван Владимирович; Bikbaev, R. G.; Бикбаев, Рашид Гельмединович; Pyatnov, M. V.; Пятнов, Максим Владимирович; Vetrov, S. Ya.; Ветров, Степан Яковлевич; Chen, K.-P.; Lee, W.; Asian Conference on Liquid Crystals(4 ; 2019 ; Jan. 17-18 ; Shenzhen, China)
}
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19.

The Influence of the Interface on the Magnetic State in Two-Layer Films of the Fe-Bi System / G. S. Patrin [et al.] // Tech. Phys. Lett. - 2019. - Vol. 45, Is. 5. - P. 507-510, DOI 10.1134/S1063785019050262. - Cited References: 13. - This investigation was supported in part by the Russian Foundation for Basic Research, project no. 18-02-00161-a. . - ISSN 1063-7850. - ISSN 1090-6533

РУБ Physics, Applied

Аннотация: Results of the experimental investigation of two-layer films in the Fe-Bi system are presented. It is found that the order of sequential deposition of the magnetic and nonmagnetic layers influences both the character of magnetization process and the magnetic resonance behavior. The obtained results are explained by the formation of a strongly anisotropic sublayer of nanogranular iron in the Bi/Fe film structure.

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Публикация на русском языке Влияние интерфейса на магнитное состояние в двухслойных пленках системы Fe-Bi [Текст] / Г. С. Патрин [и др.] // Письма в ЖТФ. - 2019. - Т. 45 Вып. 10. - С. 34-37

Держатели документа:
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Fed Res Ctr, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Patrin, G. S.; Патрин, Геннадий Семёнович; Yakovchuk, V. Yu.; Яковчук, Виктор Юрьевич; Yarikov, S. A.; Яриков, Станислав Алексеевич; Shiyan, Ya. G.; Шиян, Ярослав Германович; Furdyk, V. P.; Russian Foundation for Basic Research [18-02-00161-a]
}
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20.

Photo-orientation of nematic liquid crystal without preliminary cell surface treatment / S. A. Shvetsov [et al.] // Opt. Mater. Express. - 2019. - Vol. 9, Is. 6. - P. 2595-2600, DOI 10.1364/OME.9.002595. - Cited References: 28. - Russian Science Foundation (RSF) (18-72-00242). . - ISSN 2159-3930

РУБ Materials Science, Multidisciplinary + Optics
Рубрики:
HOMEOTROPIC ALIGNMENT
   INTERFACE
   DYE
   PHOTOALIGNMENT
   NONLINEARITY
Аннотация: We propose a simple and effective method of liquid crystal photoalignment that does not require any preliminary treatment of the cell substrates. To this aim, a small amount (0.1 wt %) of azobenzene carboxylic acid is added into the nematic liquid crystal. After filling the liquid crystal cell, a part of the dopant molecules is spontaneously adsorbed and attached to the glass surface by hydrogen bonds. This allows one to switch the boundary conditions of liquid crystal between homeotropic and planar due to the reversible trans-cis photoizomerization. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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Lomonosov Moscow State Univ, Moscow 119991, Russia.
Lebedev Phys Inst, Moscow 119991, Russia.
Russian Acad Sci, Krasnoyarsk Sci Ctr, Siberian Branch, Kirensky Inst Phys,Fed Res Ctr, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Shvetsov, S. A.; Emelyanenko, Alexander, V; Bugakov, M. A.; Boiko, N. I.; Zyryanov, V. Ya.; Зырянов, Виктор Яковлевич; Russian Science Foundation (RSF) [18-72-00242]
}
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