Библиотека института физики им. Л.В. Киренского СО РАН

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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Voronin A. S., Fadeev Y. V., Ivanchenko F. S., Dobrosmyslov S. S., Makeev M. O., Mikhalev P. A., Osipkov A. S., Damaratsky I. A., Ryzhenko D. S., Yurkov G. Y., Simunin M. M., Volochaev M. N., Tambasov I. A., Nedelin S. V., Zolotovsky N. A., Bainov D. D., Khartov S. V.
Заглавие : Original concept of cracked template with controlled peeling of the cells perimeter for high performance transparent EMI shielding films
Место публикации : Surf. Interfaces. - 2023. - Vol. 38. - Ст.102793. - ISSN 24680230 (eISSN), DOI 10.1016/j.surfin.2023.102793
Примечания : Cited References: 73. - The development of the processes of synthesis of a cracked template and conceptualization and optimization parameters peeling cells perimeter of the cracked template for the requirements of the final products were carried out with the financial support of the Ministry of Science and Higher Education of the Russian Federation within the framework of state task No. 0287–2021–0026. The development of the processes of the formation of metal films and the study of the structural, optical, electrical and shielding properties of the samples were carried out with the financial support of the Ministry of Science and Higher Education of the Russian Federation within the framework of state assignment No. FSFN-2022–0007. The physicochemical analysis of materials was carried out on equipment from the Krasnoyarsk Regional Center of Research Equipment of Federal Research Center «Krasnoyarsk Science Center SB RAS». We would like to thank Anastasia Tamarovskaya for the macro photo of thick Ag mesh samples.
Аннотация: The problem of sputtering of thick metal films on micro and nanotemplates is important for obtaining mesh transparent conductors with excellent optoelectric characteristics. In this work, we demonstrate for the first time the possibility of controlling the degree of peeling of the cell perimeter from the substrate for a cracked template based on egg white by alternating the operations of moistening the template with saturated water vapor and shock drying with hot air. Local peeling of the cracked template cells perimeter makes it possible to increase the thickness of the metal sputtered on the cracked template by more than 1 µm, which is not achievable for other lithographic approaches. Our technique was used to obtain thick Ag meshes with a low sheet resistance of no more than 1.59 Ω/sq and a transparency of about 89.1%. The thick Ag meshes show a shielding efficiency (SE) of 49 dB or 99.998% of the incident power of an electromagnetic wave at a frequency of 1 GHz. In a sandwich geometry, thick Ag meshes, which simulates a real shielding window, the shielding efficiency (SE) reaches 71 dB with a transparency of more than 80%.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fedorov A. S., Visotin M. A., Sosedkin, Oleg A., Eremkin, Egor V.
Заглавие : MD investigations of of heat flow throw interfaces in 1D systems
Место публикации : J. Sib. Fed. Univ. Math. Phys. - 2023. - Vol. 16, Is. 3. - P.385-396. - ISSN 19971397 (ISSN); Журн. СФУ. Матем. и физ. - ISSN 23136022 (eISSN)
Примечания : Cited References: 26
Аннотация: Molecular dynamic calculations (MD) of heterogeneous 1D periodical systems are presented. It is proposed the new technique of direct calculations of thermal conductivity, where there is only one thermostat in one piece of unit cell as well as another piece where artificial friction forces act on atoms. With the help of this scheme, calculations of 1D heterogeneous systems having regions with atoms of different atomic masses are presented. It is shown that the difference in atomic masses in adjacent regions of the systems leads to a significant temperature jump at interfaces between these regions. This temperature jump exists independently of the mass ratio on both sides of the interface.The reasons for these jumps are discussed. It is also shown that, by changing the alternation of regions with different masses of atoms, it is possible to reduce the total thermal conductivity of the system by several times. On the base of these results, we can hope that for three-dimensional structures also, the thermal conductivity can be significantly reduced.Представлены молекулярно-динамические расчеты (МД) гетерогенных одномерных периодических систем. Предлагается новая методика прямых расчетов теплопроводности, при которой в одном элементе элементарной ячейки находится только один термостат, а в другом элементе действуют силы искусственного трения на атомы. С помощью этой схемы представлены расчеты одномерных гетерогенных систем, имеющих области с атомами разной атомной массы. Показано, что различие атомных масс в соседних областях систем приводит к значительному скачку температуры на границах раздела между этими областями. Этот скачок температуры существует независимо от отношения масс по обе стороны от границы раздела. Обсуждаются причины этих скачков. Также показано, что, изменяя чередование областей с разной массой атомов, можно в несколько раз уменьшить общую теплопроводность системы. На основании этих результатов можно надеяться, что и для трехмерных структур теплопроводность может быть значительно снижена.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smirnov, Mikhail, Roginskii, Evgenii, Savin, Aleksandr, Oreshonkov A. S., Pankin, Dmitrii
Заглавие : Density-functional study of the Si/SiO2 interfaces in short-period superlattices: Vibrational states and Raman spectra
Колич.характеристики :18 с
Место публикации : Photonics. - 2023. - Vol. 10, Is. 8. - Ст.902. - ISSN 23046732 (eISSN), DOI 10.3390/photonics10080902
Примечания : Cited References: 61. - The study was supported by grants from the Russian Science Foundation (project No. 22-22-20021) and the Saint-Petersburg Science Center (project No. 32/2022), using the resources of the Computing Center and the Center for Optical and Laser Materials Research at the Research Park of St. Petersburg State UniversityThe study was performed using the resources of the Computing Center and the Center for Optical and Laser Materials Research at the Research Park of St. Petersburg State University. The authors thank Konstantin Smirnov for his valuable advice. The calculations were also performed in part using the facilities of the JSCC supercomputer center at RAS and the Konstantinov computational center at the Ioffe Institute
Аннотация: Raman spectroscopy has proven its effectiveness as a highly informative and sensitive method for the nondestructive analysis of layered nanostructures and their interfaces. However, there is a lack of information concerning the characteristic phonon modes and their activity in Si/SiO2 nanostructures. In order to overcome this problem, the phonon states and Raman spectra of several Si/SiO2 superlattices (SL) with layer thicknesses varied within 0.5–2 nm are studied using DFT-based computer modeling. Two types of structures with different interfaces between crystalline silicon and SiO2 cristobalite were studied. A relationship between the phonon states of heterosystems and the phonon modes of the initial crystals was established. Estimates of the parameters of deformation potentials are obtained, with the help of which the shifts of phonon frequencies caused by elastic strains in the materials of the SL layers are interpreted. The dependence of intense Raman lines on the SL structure has been studied. Several ways have been proposed to use this information, both for identifying the type of interface and for estimating the structural parameters. The obtained information will be useful for the spectroscopic characterization of the silicon/oxide interfaces.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Tarasov I. A., Yakovlev I. A., Rautskii M. V., Bondarev I. A., Lukyanenko A. V., Platunov M. S., Volochaev M. N., Efimov, Dmitriy D., Goikhman, Aleksandr Yu., Belyaev B. A., Baron F. A., Shanidze, Lev V., Farle M., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Asymmetric interfaces in epitaxial off-stoichiometric Fe3+xSi1-x/Ge/Fe3+xSi1-x hybrid structures: Effect on magnetic and electric transport properties
Коллективы : RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240012]; Government of the Russian Federation [075-15-2019-1886]; Ministry of Science and Higher Education of the Russian Federation [FZWN-2020-0008]
Место публикации : Nanomaterials. - 2022. - Vol. 12, Is. 1. - Ст.131. - ISSN 2079-4991(eISSN), DOI 10.3390/nano12010131
Примечания : Cited References: 61. - The research was funded by RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-243007, and by the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886). I.A.T. and S.N.V. thank RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-240012, for partial work related to the development of the simulation model of the pore autocorrelated radial distribution function coupled with the near coincidence site model, the Fe3+xSi1-x lattice distortion analysis, and processing Rutherford backscattering spectroscopy data. The Rutherford backscattering spectroscopy measurements were supported by the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008)
Предметные рубрики: FILMS
ANISOTROPY
SI(001)
DEVICES
SURFACE
GROWTH
Аннотация: Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 x 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Koblischka, Michael R., Koblischka-Veneva, Anjela, Gokhfeld D. M., Naik, S. Pavan Kumar, Nouailhetas, Quentin, Berger, Kevin, Douine, Bruno
Заглавие : Flux pinning docking interfaces in satellites using superconducting foams as trapped field magnets
Коллективы : ANRFrench National Research Agency (ANR); DFGGerman Research Foundation (DFG)European Commission [ANR-17-CE05-0030, DFG-ANR Ko2323-10]
Место публикации : IEEE Trans. Appl. Supercond. - 2022. - Vol. 32, Is. 4. - Ст.4900105. - ISSN 1051-8223, DOI 10.1109/TASC.2022.3147734. - ISSN 1558-2515(eISSN)
Примечания : Cited References: 44. - This work was supported in part by SUPERFOAM international project funded by ANR and DFG under Grants ANR-17-CE05-0030 and DFG-ANR Ko2323-10.
Предметные рубрики: BULK
RECONFIGURATION
MAGNETIZATION
Аннотация: Flux-Pinning Docking Interfaces (FPDI) in satellite systems were developed using bulk superconductors and permanent magnets in previous works. However, such FPDIs have limited magnetic field strength, consist of heavy-weight material, and can only be used with a single purpose, i.e., as chasing or docking satellite. Replacing the magnetic material in the FPDI by a trapped field (TF)-magnet would enable the interface to operate for both purposes, i.e., generating a (stronger) magnetic field and trapping it. We show the requirements for such a system and discuss the possible gains when using a TF-FPDI in satellites. To reduce the system weight, the use of superconducting foams as superconducting material is discussed in detail. Furthermore, the use of superconducting foams, the size of which can be easily upscaled, may also comprise the function of the damping material, so even more weight could be saved for the payload.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Cheng Y., Yang J., Luo Y., Li W., Vtyurin A. N., Jiang Q., Dunn S., Yan H.
Заглавие : Enhancement of thermoelectric performance in Bi0.5Sb1.5Te3 particulate composites including ferroelectric BaTiO3 nanodots
Место публикации : ACS Appl. Mater. Interfaces. - 2022. - Vol. 14, Is. 32. - P.37204-37212. - ISSN 19448244 (ISSN), DOI 10.1021/acsami.2c10424
Примечания : Cited References: 40. - This work was supported by the National Natural Science Foundation of China (51772019, 51572098, and 51632006) and the NSFC-Royal Society joint project (51811530307 and IEC\NSFC\170290)
Аннотация: An increasing number of studies have reported producing composite structures by combining thermoelectric and functional materials. However, combining energy filtering and ferroelectric polarization to enhance the dimensionless figure of merit thermoelectric ZT remains elusive. Here we report a composite that contains nanostructured BaTiO3 embedded in a Bi0.5Sb1.5Te3 matrix. We show that ferroelectric BaTiO3 particles are evenly composited with Bi0.5Sb1.5Te3 grains reducing the concentration of free charge carriers with increasing BaTiO3 content. Additionally, as a result of the energy-filtering effect and ferroelectric polarization, the Seebeck coefficient was improved by ∼10% with a ∼10% improvement in power factors. The BaTiO3 phase can effectively scatters phonons reducing lattice thermal conductivity κl (0.5 W m–1 K–1) and increasing ZT to 1.31 at 363 K in Bi0.5Sb1.5Te3 composites with 2 vol % BaTiO3 content giving an improvement of ∼25% over pure Bi0.5Sb1.5Te3. Our work indicates that the introduction of ferroelectric nanoparticles is an effective method for optimizing the ZT of Bi0.5Sb1.5Te3-based thermoelectric materials.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Ovchinnikov S. G., Maximova O. A., Lyashchenko S. A., Yakovlev I. A., Varnakov S. N.
Заглавие : Effect of interfaces in the multilayer structures on the electronic states
Коллективы : International workshop on functional MAX-materials, Kirensky Institute of Physics, Siberian Federal Univercity
Место публикации : International workshop on the properties of functional MAX-materials (2nd FunMax): book of abstracts/ org. com. M. Farle [et al.]. - 2021. - P.15
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Baron F. A., Mikhlin, Yurii L., Molokeev M. S., Rautskiy M. V., Tarasov I. A., Volochaev M. N., Shanidze L. V., Lukyanenko A. V., Smolyarova T. E., Konovalov, Stepan O., Zelenov, Fyodor, V, Tarasov A. S., Volkov N. V.
Заглавие : Structural, optical, and electronic properties of Cu-doped TiNxOy grown by ammonothermal atomic layer deposition
Коллективы : RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-240013]; Government of the Russian Federation for Creation of World Tier Laboratories [075-15-2019-1886]
Место публикации : ACS Appl. Mater. Interfaces. - 2021. - Vol. 13, Is. 27. - P.32531-32541. - ISSN 1944-8244, DOI 10.1021/acsami.1c08036. - ISSN 1944-8252(eISSN)
Примечания : Cited References: 69. - This research was funded by the RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science (project code 20-42-240013) and by the grant of the Government of the Russian Federation for Creation of World Tier Laboratories (contract no. 075-15-2019-1886)
Предметные рубрики: OXYNITRIDE THIN-FILMS
TITANIUM-NITRIDE
CONFORMAL TIN
Аннотация: Copper-doped titanium oxynitride (TiNxOy) thin films were grown by atomic layer deposition (ALD) using the TiCl4 precursor, NH3, and O2 at 420 °C. Forming gas was used to reduce the background oxygen concentration and to transfer the copper atoms in an ALD chamber prior to the growth initiation of Cu-doped TiNxOy. Such forming gas-mediated Cu-doping of TiNxOy films had a pronounced effect on their resistivity, which dropped from 484 ± 8 to 202 ± 4 μΩ cm, and also on the resistance temperature coefficient (TCR), which decreased from 1000 to 150 ppm °C–1. We explored physical mechanisms causing this reduction by performing comparative analysis of atomic force microscopy, X-ray photoemission spectroscopy, X-ray diffraction, optical spectra, low-temperature transport, and Hall measurement data for the samples grown with and without forming gas doping. The difference in the oxygen concentration between the films did not exceed 6%. Copper segregated to the TiNxOy surface where its concentration reached 0.72%, but its penetration depth was less than 10 nm. Pronounced effects of the copper doping by forming gas included the TiNxOy film crystallite average size decrease from 57–59 to 32–34 nm, considerably finer surface granularity, electron concentration increase from 2.2(3) × 1022 to 3.5(1) × 1022 cm–3, and the electron mobility improvement from 0.56(4) to 0.92(2) cm2 V–1 s–1. The DC resistivity versus temperature R(T) measurements from 4.2 to 300 K showed a Cu-induced phase transition from a disordered to semimetallic state. The resistivity of Cu-doped TiNxOy films decreased with the temperature increase at low temperatures and reached the minimum near T = 50 K revealing signatures of the quantum interference effects similar to 2D Cu thin films, and then, semimetallic behavior was observed at higher temperatures. In TiNxOy films grown without forming gas, the resistivity decreased with the temperature increase as R(T) = – 1.88T0.6 + 604 μΩ cm with no semimetallic behavior observed. The medium range resistivity and low TCR of Cu-doped TiNxOy make this material an attractive choice for improved matching resistors in RF analog circuits and Si complementary metal–oxide–semiconductor integrated circuits.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Li M., Zhao Y., Zhang S., Yang R., Qiu W., Wang P., Molokeev M. S., Ye S.
Заглавие : Understanding the energy barriers of the reversible ion exchange process in CsPbBr1.5Cl1.5@Y2O3:Eu3+ macroporous composites and their application in anti-counterfeiting codes
Место публикации : ACS Appl. Mater. Interfaces. - 2021. - Vol. 13, Is. 50. - P.60362-60372. - ISSN 19448244 (ISSN), DOI 10.1021/acsami.1c18030
Примечания : Cited References: 49. - This work is financially jointly supported by the Guangzhou Science & Technology Project (202007020005), NSFC (Grant No. 51772104), the Fundamental Research Funds for the Central Universities (2020ZYGXZR096), Local Innovative and Research Teams Project of Guangdong Pearl River Talents Program (2017BT01X137), and RFBR according to the research project No. 19-52-80003
Аннотация: The photoinduced reversible ion exchanges in mixed halide perovskites and the resulting luminescent variations make them promising for constructing anti-counterfeiting patterns; however, its understanding in an interfacial view is lacking. In this work, nominal CsPbBr1.5Cl1.5 (CPBC) nanocrystals (NCs) were introduced into macroporous Y2O3:Eu3+ (MYE) to realize emission color variations from red emission of MYE to green emission of halide NCs. The large surface area of MYE helps the formation of Y–Cl/Br bonds which induces fluctuation in the halide composition, while water and intrinsic halogen defects have also been proved to be essential in the reversible ion segregation process. The PL variations of several samples with different pore sizes were investigated upon irradiation of light with different photon energies and excitation power at certain temperatures. According to combined results of density functional theory calculation, the research reveals the presence of two energy barriers that would be overcome correspondingly by the excitation photon and the concentration difference in the ion exchange and recovery process. A photochromic anti-counterfeiting quick response (QR) code was constructed facilely with the perovskite composites. This work provides a deeper understanding from the interfacial aspect and also proposes a feasible strategy to realize reversible PL variation for anti-counterfeiting applications.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Ovchinnikov S. G., Maximova O. A., Lyashchenko S. A., Yakovlev I. A., Varnakov S. N.
Заглавие : Role of interfaces in the permittivity tensor of thin layers of a ferromagnetic metal
Место публикации : JETP Letters. - 2021. - Vol. 114, Is. 3. - P.163-165. - ISSN 00213640 (ISSN), DOI 10.1134/S0021364021150066
Примечания : Cited References: 13. - This work was supported by the Russian Science Foundation, project no. 21-12-00226, http://rscf.ru/project/21-12-00226/
Аннотация: It is known from experimental studies that the components of the permittivity tensor ε depend on layer thicknesses of multilayer thin films, and for nanometer layers, it is necessary to additionally consider the interlayer interfaces. This study provides an answer to the question of what is the reason for the influence of these interfaces on film properties. It is shown that the contribution of interband matrix elements for ferromagnetic films with off-diagonal components of the permittivity tensor determines the ratio between the diagonal and off-diagonal components of the tensor ε at a ferromagnetic layer thickness of about 10 nm.
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