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    Magnetoelectric and magnetoresistive properties of the CexMn1-xS semiconductors / S. S. Aplesnin [et al.] // Phys. Status Solidi B. - 2016. - Vol. 253, Is. 9. - P. 1771-1781, DOI 10.1002/pssb.201600134. - Cited References:24. - This work was financially supported by RFFI no. 15-42-04099 r_sibir_a, RFFI no. 16-52-00045 Bel_a, and government work no. 114090470016. . - ISSN 0370-1972. - ISSN 1521-3951
   Перевод заглавия: Магнитоэлектрические и магнеторезистивные свойства полупроводников CexMn1-xS

РУБ Physics, Condensed Matter
Рубрики:
X MN1-X S
ALPHA-MNS
GD
Кл.слова (ненормированные):
dielectric permeability -- Hall effect -- magnetoelectric properties -- magnetoresistive properties -- semiconductors
Аннотация: The effect of electron doping on the magnetoelectric and magnetoresistivity properties of cation-substituted antiferromagnetic CexMn1-xS (x ≤ 0.05) semiconductors at temperatures of 77-500 K in magnetic fields of up to 10 kOe was investigated. For all the compositions shifts of the temperature of the dielectric loss maximum toward higher temperature (80-500 K) with increasing magnetic field up to 10 kOe are found. The current dependence of magnetoresistance from the I-V characteristic measured in a magnetic field was established. The increase of the magnetoresistive effect with increase of the cerium ions concentration in the CexMn1-xS is found. The type of current carriers was determined on the basis of the Hall coefficient measurement. For explanation of experimental data the model of charge-orbital ordering, including orbital glass is used.

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Держатели документа:
RAS, Kirensky Inst Phys, SB, Akademgorodok 50, Krasnoyarsk 660036, Russia.
Siberian State Aerosp Univ MF Reshetnev, Krasnoyarsky Rabochy Ave 31, Krasnoyarsk 660014, Russia.
RAS, Nikolaev Inst Inorgan Chem, SB, Acad Lavrenntiev Ave 3, Novosibirsk 630090, Russia.

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Sitnikov, M. N.; Romanova, O. B.; Романова, Оксана Борисовна; Pichugin, A. Yu.; RFFI [15-42-04099 r_sibir_a, 16-52-00045 Bel_a]; [114090470016]
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Gavrichkov, V. A.
The role of orbital ordering in the formation of electron structure in undoped LaMnO3 manganites in the regime of strong electron correlations / V. A. Gavrichkov, S. G. Ovchinnikov, L. E. Yakimov // J. Exp. Theor. Phys. - 2006. - Vol. 102, Is. 6. - P. 972-985, DOI 10.1134/S1063776106060112. - Cited References: 25 . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
COLOSSAL MAGNETORESISTIVE OXIDES
   DOUBLE EXCHANGE
   BAND
   MODEL
Кл.слова (ненормированные):
Computational methods -- Correlation methods -- Doping (additives) -- Electrons -- Ferromagnetic materials -- Lanthanum compounds -- Paramagnetic materials -- Intraatomic electron correlations -- Mott Hubbard correlation gap -- Orbital ordering -- Paramagnetic phases -- Electronic structure
Аннотация: The electron structure of undoped LaMnO3 and slightly doped La1-xSrxMnO3 manganites has been calculated within the framework of a generalized tight binding method with explicit allowance for strong intra-atomic electron correlations. According to the results of these calculations, the ground state in orbitally disordered undoped LaMnO3 ferromagnets would be metallic despite the Mott-Hubbard correlation gap in the spectrum of quasiparticles. Owing to the orbital ordering, the insulating state is stabilized in both antiferromagnetic and paramagnetic phases. In-gap states of a polaron nature with a spectral weight proportional to the dopant concentration have been found near the top of the valence band in La1-xSrxMnO3. As the doping level increases, a metal state appears in the ferromagnetic phase, which has a metallic character for one spin subband and an insulating character for the other subband (representing the so-called half-metallic state).

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Публикация на русском языке Гавричков, Владимир Александрович. Роль орбитального упорядочения в формировании электронной структуры недопированных манганитов LaMnO3 в режиме сильных электронных корреляций [Текст] / В. Г. Архипкин, С. А. Мысливец, И. В. Тимофеев // Журн. эксперим. и теор. физ. - 2006. - Т. 129 Вып. 6.- P.1103-1117

Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Div, Krasnoyarsk 660036, Russia
Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Siberian State Aerospace University, Krasnoyarsk, 660014, Russian Federation

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Yakimov, L. E.; Гавричков, Владимир Александрович
}
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Magnetic properties of FexMn1-xS sulfides exhibiting the magnetoresistive effect / G. A. Petrakovskii [et al.] // Phys. Solid State. - 2002. - Vol. 44, Is. 10. - P. 1925-1928, DOI 10.1134/1.1514782. - Cited References: 10 . - ISSN 1063-7834

РУБ Physics, Condensed Matter

Аннотация: The magnetic, electrical, and thermal (derived from DTA data) properties of FexMn1 - xS polycrystalline sulfides (0less than or equal toxless than or equal to0.38) synthesized based on alpha-MnS (NaCl cubic lattice) and exhibiting colossal magnetoresistance were studied. The studies were conducted at temperatures from 77 to 1000 K and magnetic fields of up to 30 kOe. As the degree of cation substitution in the FexMn1 - xS system was increased, the magnetic order was found to change from antiferromagnetic to ferromagnetic. In the high-temperature domain (550-850 K), the samples undergo two phase transitions with critical temperatures T-c1 and T-c2, which are accompanied by reversible anomalies in the magnetization and thermal (DTA) properties and by a semiconductor-metal transition. (C) 2002 MAIK "Nauka/Interperiodica".

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Держатели документа:
Russian Acad Sci, Siberian Div, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Natl Acad Belarus, Inst Solid State & Semicond Phys, Minsk 220072, Byelarus
ИФ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk 660036, Russian Federation

Доп.точки доступа:
Petrakovskii, G. A.; Петраковский, Герман Антонович; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна; Abramova, G. M.; Абрамова, Галина Михайловна; Balaev, A. D.; Балаев, Александр Дмитриевич; Romanova, O. B.; Романова, Оксана Борисовна; Makovetskii, G. I.; Yanushkevich, K. I.; Galyas, A. I.
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Anisotropy of the magnetoresistive properties of granular high-temperature superconductors resulting from magnetic flux compression in the intergrain medium / S. V. Semenov [et al.] // Phys. Solid State. - 2017. - Vol. 59, Is. 7. - P. 1291-1297, DOI 10.1134/S1063783417070241. - Cited References: 26 . - ISSN 1063-7834
Аннотация: To elucidate the origin of the well-known anisotropy of the magnetoresistive properties of granular high-temperature superconductors (HTSs), which is related to the mutual orientation of magnetic field H and transport current j, we investigate the hysteretic dependences of magnetoresistance R(H) of the yttrium HTS sample at the perpendicular (H ⊥ j) and parallel (H || j) configurations. The hysteretic R(H) dependences are analyzed using the concept of the effective field in the intergrain boundaries through which superconducting current carriers tunnel. The effective degree of magnetic flux compression in the intergrain medium at the perpendicular configuration was found to be twice as much as at the parallel one. This approach explains well the anisotropy of the magnetoresistive properties of granular HTSs, which was previously reported by many authors, and the temperature dependences of the resistance in the resistive transition region.

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Публикация на русском языке Анизотропия магниторезистивных свойств гранулярных высокотемпературных сверхпроводников как результат сжатия магнитного потока в межгранульной среде [Текст] / С. В. Семенов [и др.] // Физ. тверд. тела : Наука, 2017. - Т. 59 Вып. 7. - С. 1267–1273

Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
Siberian Federal University, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Semenov, S. V.; Семенов, Сергей Васильевич; Balaev, D. A.; Балаев, Дмитрий Александрович; Pochekutov, M. A.; Почекутов, М. А.; Velikanov, D. A.; Великанов, Дмитрий Анатольевич
}
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Current channel switching in the manganite-based multilayer structure / N. V. Volkov [et al.] // J. Phys. Conf. Ser. - 2010. - Vol. 200, Is. SECTION 5, DOI 10.1088/1742-6596/200/5/052031 . - ISSN 1742-6588
Кл.слова (ненормированные):
Channel switching -- Current in planes -- Magnetic tunnel junction -- Magnetoresistive -- Manganese silicide -- Multilayer structures -- Optical radiations -- Potential barriers -- Lanthanum -- Magnetic fields -- Manganese -- Silicides -- Transport properties -- Tunnel junctions -- Manganese oxide
Аннотация: The transport properties of the structure La0.7Sr 0.3MnO3/depleted manganite layer/MnSi have been studied. The depleted manganite layer serves as a potential barrier between the ferromagnetic conducting La0.7Sr0.3MnO3 and MnSi layers by forming a magnetic tunnel junction. The study in the CIP (current-in-plane) geometry has revealed the effect of current channel switching between the manganite layer and the manganese silicide layer with higher conductivity. The effect is controlled by bias current, magnetic field, and optical radiation. Such switching is responsible for the features of the transport properties and the magnetoresistive and photovoltaic effects in the structure. © 2010 IOP Publishing Ltd.

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Держатели документа:
Kirensky Institute of Physics SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Institute of Engineering Physics and Radio Electronics, Krasnoyarsk, 660041, Russian Federation
Chungbuk National University, Department of Physics, Cheongju, 361-763, South Korea

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Patrin, G. S.; Патрин, Геннадий Семёнович; Kim, P. D.; Ким, Пётр Дементьевич; Seong-Cho, Y.; Kim, D. -H.; Chau, N.
}
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Magnetic, resonance and magnetoresistive properties of NiFe/Bi/NiFe films [Text] / K. G. Patrin, V. Yu. Yakovchuk, D. A. Velikanov [et al.] // Spin Waves 2011, Int. Symp. : program, abstracts. - СПб., 2011. - Ст. P35. - P. l 14

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Доп.точки доступа:
Patrin, K. G.; Патрин, Константин Геннадьевич; Yakovchuk, V. Yu.; Яковчук, Виктор Юрьевич; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Patrin, G. S.; Патрин, Геннадий Семёнович; Yarikov, S.A.; "Spin Waves", International Simposium(2011 ; Jun. ; 5-11 ; Saint Petersburg); Физико-технический институт им. А.Ф. Иоффе РАН
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Magnetoresistive effect in the cobalt-doped bismuth ferrite films / O. B. Romanova, S. S. Aplesnin, M. N. Sitnikov [et al.] // J. Mater. Sci.: Mater. Electron. - 2020. - Vol. 31, Is. 10. - P. 7946-7952, DOI 10.1007/s10854-020-03333-7. - Cited References: 39 . - ISSN 0957-4522. - ISSN 1573-482X

РУБ Engineering, Electrical & Electronic + Materials Science, Multidisciplinary + Physics, Applied + Physics, Condensed Matter
Рубрики:
BIFEO3 THIN-FILMS
   ELECTRICAL-PROPERTIES
   COFE/CU MULTILAYERS
   GIANT MAGNETORESISTANCE
Аннотация: Bismuth ferrite films have been synthesized by the burst-mode deposition of the BiFe0.8Co0.2O3 solid solutions onto object glasses. The surface morphology of the BiFe0.8Co0.2O3 films has been examined. The effect of electron doping implemented by substitution of cobalt for iron in the BiFe0.8Co0.2O3 films on their magnetic, electrical, and galvanomagnetic properties has been investigated at temperatures of 77-600 K in magnetic fields of up to 12 kOe. The negative magnetoresistance has been observed, which changes its sign in the region of formation of magnetically heterogeneous states and attain its maximum value above room temperature. It has been established that the magnetoresistance is caused by the competition of electron hoppings and localization of electrons in a magnetic field. Using the Hall measurements, the carrier type has been determined. A model of the change in the curriers sign upon heating due to the shift of the chemical potential relative to the impurity subband has been proposed.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian State Univ Sci & Technol, Krasnoyarsk 660014, Russia.
Natl Acad Sci Belarus, Sci Pract Mat Res Ctr, Minsk 220072, BELARUS.

Доп.точки доступа:
Romanova, O. B.; Романова, Оксана Борисовна; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Sitnikov, M. N.; Udod, L. V.; Удод, Любовь Викторовна; Begisheva, O. B.; Demidenko, O. F.
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Compression of a magnetic flux in the intergrain medium of a YBa2Cu3O7 granular superconductor from magnetic and magnetoresistive measurements / D. A. Balaev [et al.] // J. Appl. Phys. - 2011. - Vol. 110, Is. 9. - Ст. 93918, DOI 10.1063/1.3657775. - Cited References: 21. - We thank V. V. Val'kov and A. D. Balaev for useful discussions of the results and I. Nemtsev for microscopic study of the samples. The study was supported by the Program of the Russian Academy of Sciences No. 5, Project No. 7. . - ISSN 0021-8979

РУБ Physics, Applied
Рубрики:
HIGH-TEMPERATURE SUPERCONDUCTORS
   CRITICAL-CURRENT-DENSITY
   CRITICAL-STATE MODEL
   CRITICAL CURRENTS
   JOSEPHSON MEDIUM
   FIELD
   TRANSITION
Кл.слова (ненормированные):
Effective field -- External fields -- Field dependence -- Field induced -- Granular superconductors -- Inter-grain -- Josephson -- Magnetoresistive -- Space between -- Superconducting grains -- Transport currents -- Electric resistance -- Magnetic flux -- Magnetic moments -- Superconductivity -- Superconducting materials
Аннотация: A method to determine a value of the effective field in the intergrain medium of a granular superconductor is proposed. The space between superconducting grains is considered to be a Josephson medium where passage of the transport current causes dissipation and the effective field is superposition of external field H and the field induced by magnetic moments of superconducting grains. The method proposed is based on the comparison of hysteresis field dependences of magnetoresistance and magnetization and their relaxation at H=const. By the example of granular YBa2Cu3O7, it is shown that, in the region of weak fields, the effective field in the intergrain medium exceeds by far the external field, i.e., compression of a magnetic flux occurs. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3657775]

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Держатели документа:
[Balaev, D. A.
Popkov, S. I.
Semenov, S. V.
Shaykhutdinov, K. A.
Shabanov, A. V.
Petrov, M. I.] Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia
[Balaev, D. A.
Sabitova, E. I.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk 660036, Russian Federation
Siberian Federal University, Krasnoyarsk 660041, Russian Federation

Доп.точки доступа:
Balaev, D. A.; Балаев, Дмитрий Александрович; Popkov, S. I.; Попков, Сергей Иванович; Sabitova, E. I.; Semenov, S. V.; Семенов, Сергей Васильевич; Shaykhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Shabanov, A. V.; Шабанов, Александр Васильевич; Petrov, M. I.; Петров, Михаил Иванович
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    The optically induced and bias-voltage-driven magnetoresistive effect in a silicon-based device / N. V. Volkov [et al.] // J. Surf. Invest. - 2015. - Vol. 9, Is. 5. - P. 984-994, DOI 10.1134/S1027451015050432. - Cited References: 32. - This work was supported by the Russian Foundation for Basic Research, project nos. 14-02-00234-a and 14-02-31156; the Russian Ministry of Education and Science, state task no. 16.663.2014K; and the Russian Ministry of Education and Science, project no. 02.G25.31.0043. . - ISSN 1027-4510
   Перевод заглавия: Оптически индуцированный и управляемый напряжением магниторезистивный эффект в устройстве на основе кремния

РУБ Surfaces and Interfaces, Thin Films

Кл.слова (ненормированные):
magnetoresistance -- magnetotransport properties -- photoconductivity -- bias voltage
Аннотация: The giant change in photoconductivity of a device based on the Fe/SiO2/p-Si structure in magnetic field is reported. As the magnetic field increases to 1 T, the conductivity changes by a factor of more than 25. The optically induced magnetoresistance effect is strongly dependent of the applied magnetic field polarity, as well as of sign and value of a bias voltage across the device. The main mechanism of the magnetic field effect is related to the Lorentz force, which deflects the trajectories of photogenerated carriers, thereby changing their recombination rate. The structural asymmetry of the device leads to the asymmetry of the dependence of recombination on the magnetic field polarity: recombination of carriers deflected in the bulk of semiconductor is relatively slow, while recombination of carriers at the SiO2/p-Si interface is faster. In the latter case, the interface states serve as effective recombination centers. The bias voltage sign specifies the type of carriers, whose trajectories pass near the interface, providing the main contribution to the magnetoresistance effect. The bias voltage controls the electric field accelerating carriers and, thus, affects the hole and electron trajectories. Moreover, when the bias voltage exceeds a certain threshold value, the electron impact ionization regime is implemented. The magnetic field suppresses impact ionization by enhancing recombination, which makes the largest contribution to the magnetoresistance of the device. The investigated device can be used as a prototype of silicon chips controlled simultaneously by optical radiation, magnetic field, and bias voltage. © 2015, Pleiades Publishing, Ltd.

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Держатели документа:
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian branch, Krasnoyarsk, Russian Federation
Siberian Federal University, Institute of Engineering Physics and Radio Electronics, Krasnoyarsk, Russian Federation
Siberian State Aerospace University, Institute of Space Technology, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Baron, F. A.; Барон, Филипп Алексеевич; Bondarev, I. A.; Бондарев, Илья Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
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10.

Magnetism and magnetoresistance in NiFe/Bi/NiFe films / K. G. Patrin [et al.] // Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P. 439-442, DOI 10.4028/www.scientific.net/SSP.190.439 . - ISBN 1012-0394. - ISBN 9783037854365
Кл.слова (ненормированные):
Antiferromagnetic interaction -- Bi spacer -- Hysteresis loop -- Interlayer coupling -- Magnetization -- Magnetoresistance -- Permalloy -- Trilayer films -- Antiferro-magnetic interactions -- Giant magnetoresistive -- Interlayer coupling -- Interlayer interactions -- Permalloy -- Spacer thickness -- SQUID magnetometry -- Trilayer film -- Trilayers -- Antiferromagnetism -- Bismuth -- Giant magnetoresistance -- Hysteresis loops -- Magnetic materials -- Magnetic resonance -- Magnetization -- Magnetoresistance -- Electric resistance
Аннотация: Interlayer interactions in FeNi/Bi/FeNi trilayers have been experimentally studied. Based on the data of SQUID magnetometry and magnetic resonance investigations, it is shown that the interlayer interaction is determined by a bismuth spacer thickness and temperature. The giant magnetoresistive effect in the trilayer films has been discovered. В© (2012) Trans Tech Publications.

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Доп.точки доступа:
Patrin, K. G.; Патрин, Константин Геннадьевич; Yakovchuk, V.Yu.; Яковчук, Виктор Юрьевич; Patrin, G. S.; Патрин, Геннадий Семёнович; Yarikov, S. A.; Moscow International Symposium on Magnetism(5 ; 2011 ; Aug. ; 21-25 ; Moscow)
}
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