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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gavrichkov V. A., Ovchinnikov S. G., Yakimov L. E.
Заглавие : The role of orbital ordering in the formation of electron structure in undoped LaMnO3 manganites in the regime of strong electron correlations
Место публикации : J. Exp. Theor. Phys.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2006. - Vol. 102, Is. 6. - P972-985. - ISSN 1063-7761, DOI 10.1134/S1063776106060112
Примечания : Cited References: 25
Предметные рубрики: COLOSSAL MAGNETORESISTIVE OXIDES
DOUBLE EXCHANGE
BAND
MODEL
Ключевые слова (''Своб.индексиров.''): computational methods--correlation methods--doping (additives)--electrons--ferromagnetic materials--lanthanum compounds--paramagnetic materials--intraatomic electron correlations--mott hubbard correlation gap--orbital ordering--paramagnetic phases--electronic structure
Аннотация: The electron structure of undoped LaMnO3 and slightly doped La1-xSrxMnO3 manganites has been calculated within the framework of a generalized tight binding method with explicit allowance for strong intra-atomic electron correlations. According to the results of these calculations, the ground state in orbitally disordered undoped LaMnO3 ferromagnets would be metallic despite the Mott-Hubbard correlation gap in the spectrum of quasiparticles. Owing to the orbital ordering, the insulating state is stabilized in both antiferromagnetic and paramagnetic phases. In-gap states of a polaron nature with a spectral weight proportional to the dopant concentration have been found near the top of the valence band in La1-xSrxMnO3. As the doping level increases, a metal state appears in the ferromagnetic phase, which has a metallic character for one spin subband and an insulating character for the other subband (representing the so-called half-metallic state).
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Baron F. A., Bondarev I. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : The optically induced and bias-voltage-driven magnetoresistive effect in a silicon-based device
Место публикации : J. Surf. Invest.: MAIK Nauka-Interperiodica / Springer, 2015. - Vol. 9, Is. 5. - P.984-994. - ISSN 1027-4510, DOI 10.1134/S1027451015050432
Примечания : Cited References: 32. - This work was supported by the Russian Foundation for Basic Research, project nos. 14-02-00234-a and 14-02-31156; the Russian Ministry of Education and Science, state task no. 16.663.2014K; and the Russian Ministry of Education and Science, project no. 02.G25.31.0043.
Ключевые слова (''Своб.индексиров.''): magnetoresistance--magnetotransport properties--photoconductivity--bias voltage
Аннотация: The giant change in photoconductivity of a device based on the Fe/SiO2/p-Si structure in magnetic field is reported. As the magnetic field increases to 1 T, the conductivity changes by a factor of more than 25. The optically induced magnetoresistance effect is strongly dependent of the applied magnetic field polarity, as well as of sign and value of a bias voltage across the device. The main mechanism of the magnetic field effect is related to the Lorentz force, which deflects the trajectories of photogenerated carriers, thereby changing their recombination rate. The structural asymmetry of the device leads to the asymmetry of the dependence of recombination on the magnetic field polarity: recombination of carriers deflected in the bulk of semiconductor is relatively slow, while recombination of carriers at the SiO2/p-Si interface is faster. In the latter case, the interface states serve as effective recombination centers. The bias voltage sign specifies the type of carriers, whose trajectories pass near the interface, providing the main contribution to the magnetoresistance effect. The bias voltage controls the electric field accelerating carriers and, thus, affects the hole and electron trajectories. Moreover, when the bias voltage exceeds a certain threshold value, the electron impact ionization regime is implemented. The magnetic field suppresses impact ionization by enhancing recombination, which makes the largest contribution to the magnetoresistance of the device. The investigated device can be used as a prototype of silicon chips controlled simultaneously by optical radiation, magnetic field, and bias voltage. © 2015, Pleiades Publishing, Ltd.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Prus A. G., Shaykhutdinov K. A., Gokhfeld D. M., Petrov M. I.
Заглавие : Study of dependence upon the magnetic field and transport current of the magnetoresistive effect in YBCO-based bulk composites
Место публикации : Supercond. Sci. Technol.: IOP PUBLISHING LTD, 2007. - Vol. 20, Is. 6. - P495-499. - ISSN 0953-2048, DOI 10.1088/0953-2048/20/6/002
Примечания : Cited References: 25
Предметные рубрики: CERAMIC SUPERCONDUCTORS
DISSIPATION
TRANSITION
SENSORS
MOTION
FILMS
Ключевые слова (''Своб.индексиров.''): current voltage characteristics--lorentz force--magnetic field effects--magnetic flux--magnetic sensors--magnetoresistance--intergrain boundaries--magnetic field sensor devices--magnetoresistance curves--magnetoresistive properties--yttrium barium copper oxides
Аннотация: The magnetoresistive properties of bulk YBCO + CuO and YBCO + BaPb0.75Sn0.25O3 composites for different orientations of external magnetic field H and macroscopic transport current j have been measured. These composites exhibit large magnetoresistance in weak magnetic fields ( 100 Oe), which makes them promising candidates for practical application in magnetic field sensor devices. The difference between.( T) dependences, magnetoresistance curves R( H) and current - voltage characteristics measured for H parallel to j and H || j is observed indicating the presence of the Lorentz- force- dependent dissipation in the composites. Angular dependences of magnetoresistance R(theta) ( where theta
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Patrin G. S., Beletskii V. V., Volkov N. V., Velikanov D. A., Zakieva O. V.
Заглавие : Physical properties of Fe(1-x)Dy(x)Sicrystals
Разночтения заглавия :авие SCOPUS: Physical properties of Fe1-x Dy x Si crystals
Место публикации : J. Exp. Theor. Phys.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2007. - Vol. 105, Is. 1. - P1-3. - ISSN 1063-7761, DOI 10.1134/S1063776107070011
Примечания : Cited References: 16
Предметные рубрики: METAL-INSULATOR TRANSITIONS
FESI
Ключевые слова (''Своб.индексиров.''): crystal structure--electric properties--magnetic field effects--magnetic properties--magnetization--magnetoresistance--dy ions--magnetoresistive effect--temperature dependences--iron compounds
Аннотация: The results of experimental investigation of magnetic and electric properties of Fe1-x Dy (x) Si crystals are reported. It is shown that the magnitude and position of the anomaly observed in the temperature dependences of magnetization are controlled to a considerable extent by the external magnetic field. It is found that the introduction of Dy ions leads to a weak magnetoresistive effect.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Romanova O. B., Aplesnin S. S., Sitnikov M. N., Udod L. V., Begisheva O. B., Demidenko O. F.
Заглавие : Magnetoresistive effect in the cobalt-doped bismuth ferrite films
Место публикации : J. Mater. Sci.: Mater. Electron. - 2020. - Vol. 31, Is. 10. - P.7946-7952. - ISSN 0957-4522, DOI 10.1007/s10854-020-03333-7. - ISSN 1573-482X(eISSN)
Примечания : Cited References: 39
Предметные рубрики: BIFEO3 THIN-FILMS
ELECTRICAL-PROPERTIES
COFE/CU MULTILAYERS
GIANT MAGNETORESISTANCE
Аннотация: Bismuth ferrite films have been synthesized by the burst-mode deposition of the BiFe0.8Co0.2O3 solid solutions onto object glasses. The surface morphology of the BiFe0.8Co0.2O3 films has been examined. The effect of electron doping implemented by substitution of cobalt for iron in the BiFe0.8Co0.2O3 films on their magnetic, electrical, and galvanomagnetic properties has been investigated at temperatures of 77-600 K in magnetic fields of up to 12 kOe. The negative magnetoresistance has been observed, which changes its sign in the region of formation of magnetically heterogeneous states and attain its maximum value above room temperature. It has been established that the magnetoresistance is caused by the competition of electron hoppings and localization of electrons in a magnetic field. Using the Hall measurements, the carrier type has been determined. A model of the change in the curriers sign upon heating due to the shift of the chemical potential relative to the impurity subband has been proposed.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Shaihutdinov K. A., Popkov S. I., Gokhfeld D. M., Petrov M. I.
Заглавие : Magnetoresistive effect in bulk composites 1-2-3 YBCO+CuO and 1-2-3 YBCO+BaPb(1-x)SnxO(3) and their application as magnetic field sensors at 77 K
Разночтения заглавия :авие SCOPUS: Magnetoresistive effect in bulk composites 1-2-3 YBCO + CuO and 1-2-3 YBCO + BaPb1-xSnxO3 and their application as magnetic field sensors at 77 K
Место публикации : Supercond. Sci. Technol.: IOP PUBLISHING LTD, 2004. - Vol. 17, Is. 1. - P175-181. - ISSN 0953-2048, DOI 10.1088/0953-2048/17/1/031
Примечания : Cited References: 27
Предметные рубрики: PHASE-SLIP
SUPERCONDUCTOR
TEMPERATURE
YBA2CU3O7-DELTA
TRANSITION
Ключевые слова (''Своб.индексиров.''): ceramic materials--composite materials--critical current density (superconductivity)--high temperature operations--high temperature superconductors--lead compounds--magnetoresistance--sensors--yttrium barium copper oxides--high temperature superconductor ceramics--magnetic field sensors--magnetoresistive effect--transport current density--oxide superconductors
Аннотация: We have studied the magnetoresistive effect in bulk 1-2-3 YBCO + CuO and 1-2-3 YBCO + BaPb1-xSnxO3 composites prepared using the fast backing technique. We have found that the composites exhibit large magnetoresistance in low magnetic fields ( 100 Oe) for a broad temperature range. We have studied the experimental dependences of resistivity versus magnetic field at various transport current densities. The high-T-C superconductor (HTSC) based composites exhibit a much higher sensitivity to weak magnetic fields at liquid nitrogen temperature, compared to that for pure HTSC ceramics. This effect is attractive for practical applications and the composite materials can be used as active elements in magnetic field sensor devices.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Sitnikov M. N., Romanova O. B., Pichugin, A. Yu.
Заглавие : Magnetoelectric and magnetoresistive properties of the CexMn1-xS semiconductors
Коллективы : RFFI [15-42-04099 r_sibir_a, 16-52-00045 Bel_a]; [114090470016]
Место публикации : Phys. Status Solidi B. - 2016. - Vol. 253, Is. 9. - P.1771-1781. - ISSN 0370-1972, DOI 10.1002/pssb.201600134. - ISSN 1521-3951(eISSN)
Примечания : Cited References:24. - This work was financially supported by RFFI no. 15-42-04099 r_sibir_a, RFFI no. 16-52-00045 Bel_a, and government work no. 114090470016.
Предметные рубрики: X MN1-X S
ALPHA-MNS
GD
Ключевые слова (''Своб.индексиров.''): dielectric permeability--hall effect--magnetoelectric properties--magnetoresistive properties--semiconductors
Аннотация: The effect of electron doping on the magnetoelectric and magnetoresistivity properties of cation-substituted antiferromagnetic CexMn1-xS (x ≤ 0.05) semiconductors at temperatures of 77-500 K in magnetic fields of up to 10 kOe was investigated. For all the compositions shifts of the temperature of the dielectric loss maximum toward higher temperature (80-500 K) with increasing magnetic field up to 10 kOe are found. The current dependence of magnetoresistance from the I-V characteristic measured in a magnetic field was established. The increase of the magnetoresistive effect with increase of the cerium ions concentration in the CexMn1-xS is found. The type of current carriers was determined on the basis of the Hall coefficient measurement. For explanation of experimental data the model of charge-orbital ordering, including orbital glass is used.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Patrin K. G., Yakovchuk V.Yu., Patrin G. S., Yarikov S. A.
Заглавие : Magnetism and magnetoresistance in NiFe/Bi/NiFe films
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P.439-442. - ISBN 1012-0394, DOI 10.4028/www.scientific.net/SSP.190.439. - ISBN 9783037854365
Ключевые слова (''Своб.индексиров.''): antiferromagnetic interaction--bi spacer--hysteresis loop--interlayer coupling--magnetization--magnetoresistance--permalloy--trilayer films--antiferro-magnetic interactions--giant magnetoresistive--interlayer coupling--interlayer interactions--permalloy--spacer thickness--squid magnetometry--trilayer film--trilayers--antiferromagnetism--bismuth--giant magnetoresistance--hysteresis loops--magnetic materials--magnetic resonance--magnetization--magnetoresistance--electric resistance
Аннотация: Interlayer interactions in FeNi/Bi/FeNi trilayers have been experimentally studied. Based on the data of SQUID magnetometry and magnetic resonance investigations, it is shown that the interlayer interaction is determined by a bismuth spacer thickness and temperature. The giant magnetoresistive effect in the trilayer films has been discovered. В© (2012) Trans Tech Publications.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Patrin K. G., Yakovchuk V. Yu., Velikanov D. A., Patrin G. S., Yarikov S.A.
Заглавие : Magnetic, resonance and magnetoresistive properties of NiFe/Bi/NiFe films
Коллективы : "Spin Waves", International Simposium, Физико-технический институт им. А.Ф. Иоффе РАН
Место публикации : Spin Waves 2011, Int. Symp.: program, abstracts. - СПб., 2011. - Ст.P35. - P.l 14
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Petrakovskii G. A., Ryabinkina L. I., Abramova G. M., Balaev A. D., Romanova O. B., Makovetskii G. I., Yanushkevich K. I., Galyas A. I.
Заглавие : Magnetic properties of FexMn1-xS sulfides exhibiting the magnetoresistive effect
Место публикации : Phys. Solid State: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2002. - Vol. 44, Is. 10. - P1925-1928. - ISSN 1063-7834, DOI 10.1134/1.1514782
Примечания : Cited References: 10
Аннотация: The magnetic, electrical, and thermal (derived from DTA data) properties of FexMn1 - xS polycrystalline sulfides (0less than or equal toxless than or equal to0.38) synthesized based on alpha-MnS (NaCl cubic lattice) and exhibiting colossal magnetoresistance were studied. The studies were conducted at temperatures from 77 to 1000 K and magnetic fields of up to 30 kOe. As the degree of cation substitution in the FexMn1 - xS system was increased, the magnetic order was found to change from antiferromagnetic to ferromagnetic. In the high-temperature domain (550-850 K), the samples undergo two phase transitions with critical temperatures T-c1 and T-c2, which are accompanied by reversible anomalies in the magnetization and thermal (DTA) properties and by a semiconductor-metal transition. (C) 2002 MAIK "Nauka/Interperiodica".
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