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    Zobov, V. E.
    Associative memory on qutrits by means of quantum annealing / V. Zobov, I. Pichkovskiy // Quantum Inf. Process. - 2020. - Vol. 19, Is. 9. - Ст. 342, DOI 10.1007/s11128-020-02851-x. - Cited References: 23 . - ISSN 1570-0755. - ISSN 1573-1332
   Перевод заглавия: Ассоциативная память на кутритах посредством квантового отжига
Кл.слова (ненормированные):
Quantum adiabatic algorithm -- Quantum annealing -- Qubit -- Qutrit -- Associative memory -- Memory capacity
Аннотация: When associative memory is implemented on the well-studied Hopfield network, patterns are recorded in the interaction constants between binary neurons. These constants are chosen so that each pattern should have its own minimum energy of the system described by the Ising model. In the quantum version of the Hopfield network, it was proposed to recall such states by the adiabatic change of the Hamiltonian in time. Qubits, quantum elements with two states, for example, spins with S=1/2 were considered as neurons. In this paper, for the first time, we study the function of associative memory using three-level quantum elements-qutrits, represented by spins with S=1. We record patterns with the help of projection operators. This choice is due to the need to operate with a state with a zero spin projection, whose interaction with the magnetic field vanishes. We recall the state corresponding to one of the patterns recorded in the memory, or superposition of such states by means of quantum annealing. To equalize the probabilities of finding the system in different states of superposition, an auxiliary Hamiltonian is proposed, which is turned off at the end of evolution. Simulations were performed on two and three qutrits and an increase in the memory capacity after replacing qubits with qutrits was shown.

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Держатели документа:
RAS, Fed Res Ctr, Kirensky Inst Phys, KSC,SB, Akademgorodok 50,Bld 38, Krasnoyarsk, Russia.

Доп.точки доступа:
Pichkovskiy, I. S.; Пичковский, Иван Сергеевич; Зобов, Владимир Евгеньевич
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Possibilities of controlling the quantum states of hole qubits in an ultrathin germanium layer using a magnetic substrate: Results from ab initio calculations / A. N. Chibisov, M. A. Chibisova, A. V. Prokhorenko [et al.] // Nanomaterials. - 2023. - Vol. 13, Is. 23. - Ст. 3070, DOI 10.3390/nano13233070. - Cited References: 36. - This work was supported by the Russian Science Foundation of the Russian Federation (project No. 22-23-01186). The authors would like to thank them for providing access to the HPC cluster at the Center for Shared Use of Scientific Equipment and the Center for Processing and Storage of Scientific Data of the Far Eastern Branch of the Russian Academy of Sciences and the Joint Supercomputer Center of the Russian Academy of Sciences (JSCC RAS) . - ISSN 2079-4991
Кл.слова (ненормированные):
density functional theory -- quantum state -- hole qubit -- electronic structure -- electric field
Аннотация: Using density functional theory in the noncollinear approximation, the behavior of quantum states of hole qubits in a Ge/Co:ZnO system was studied in this work. A detailed analysis of the electronic structure and the distribution of total charge density and hole states was carried out. It was shown that in the presence of holes, the energetically more favorable quantum state is the state |0˃, in contrast to the state |1˃ when there is no hole in the system. The favorability of hole states was found to be dependent on the polarity of the applied electric field.

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Держатели документа:
Computing Center, Far Eastern Branch of the Russian Academy of Sciences, Khabarovsk 680000, Russia
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk 660036, Russia
Laboratory of Chemical Engineering Thermodynamics, Department of Chemical Engineering, Tsinghua University, Beijing 100084, China

Доп.точки доступа:
Chibisov, Andrey N.; Chibisova, Mary A.; Prokhorenko, Anastasiia V.; Obrazcov, Kirill V.; Fedorov, A. S.; Федоров, Александр Семенович; Yu, Yang-Xin
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