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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov I. A., Bondarev I. A., Romanenko A. I.
Заглавие : α-FeSi2 as a buffer layer for β-FeSi2 growth: analysis of orientation relationships in silicide/Silicon, silicide/silicide heterointerfaces
Коллективы : Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science [18-42-243013]; Ministry of Education and Science of the Russian FederationMinistry of Education and Science, Russian Federation; Siberian Branch of the Russian Academy of SciencesRussian Academy of Sciences [II.8.70]
Место публикации : J. Surf. Ingestig. - 2020. - Vol. 14, Is. 4. - P.851-861. - ISSN 1027-4510, DOI 10.1134/S1027451020040357. - ISSN 1819-7094(eISSN)
Примечания : Cited References: 74. - The work was supported by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research project no. 18-42-243013. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70)
Предметные рубрики: β-FeSi2 thin-films
Thermal-expansion
Phase-transformation
Аннотация: In this manuscript, we attempt to clarify the capability of utilisation of α-FeSi2 nanocrystals as a buffer layer for growth of monocrystalline/high-quality β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Iron silicides-based nanostructures have a wide spectrum of possible industrial applications in different fields. Mainly, interest in these functional materials is caused by their ecological safety and Earth’s core abundance that give us the opportunity for greener future with highly effective electronic devices. β-FeSi2 phase due to its allowed direct transition with energy close to 0.87 eV can be used as active material in light emission diodes (LED). Utilisation of buffer layers between silicon substrate and give one more tool to engineer the band structure of semiconducting β‑FeSi2 phase. We attempt to clarify the capability of the utilisation of the α-FeSi2 phase as a buffer layer for the growth of β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Possible β-FeSi2/α-,γ-,s-FeSi2/Si orientation relationships (ORs) and habit planes were examined with crystallogeometrical approaches and compared with β-FeSi2/Si ones. The lowest interplanar and interatomic spacing misfits between silicon lattice and a silicide one are observed for the pair of s-FeSi2{011}[200]/Si{022}[100] at room temperature and equal to –0.57%. The least interplanar and interatomic spacing misfit of 1.7 and 1.88%, respectively, for β-FeSi2/Si, can be decreased as low as –0.67 (interplanar) and 0.87 (interatomic) % by placing an α-FeSi2 layer between silicon and β-FeSi2 phase. It is stated that the growth of metastable γ-FeSi2 is also favourable on silicon due to low interplanar and interatomic spacing misfit (–0.77%) and a higher density of NCS in comparison with s-FeSi2. Design and technological procedure for the synthesis of possible β-FeSi2/α-FeSi2/Si heterostructure have been proposed based on the results obtained.
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Вид документа : Статья из сборника (выпуск продолж. издания)
Шифр издания :
Автор(ы) : Denisova E. A., Nemtsev I. V., Telegin S. V., Iskhakov R. S., Kuzovnikova L. A., Shepeta N. A.
Заглавие : Microstructure and magnetic properties of Co58Ni10Fe5B16Si11 and Co58Ni10Fe5B16Si11-Al2O3 bulk amorphous coatings prepared by plasma spraying
Коллективы : International Conference on High-Tech and Innovations in Research and Manufacturing
Место публикации : J. Phys.: Conf. Ser. - 2020. - Vol. 1582, Is. 1. - Ст.012078. - DOI 10.1088/1742-6596/1582/1/012078
Примечания : Cited References: 18. - This work was funded by the Russian Foundation for Basic Research, the Government of the Krasnoyarsk Territory, the Krasnoyarsk Regional Fund for the Support of Scientific and Technical Activities (project no. 18-42-240006 Nanomaterials with magnetic properties determined by the topological features of the nanostructure). The authors thank the Krasnoyarsk Regional Center of Research Equipment of Federal Research Center “Krasnoyarsk Science Center SB RAS” for the provided equipment
Аннотация: The bulk soft magnetic glassy Co58Ni10Fe5B16Si11 alloy specimens have been prepared by plasma spray deposition. In order to increase resistivity of the material, the bulk Co58Ni10Fe5B16Si11-Al2O3 composite materials were fabricated. The investigations of structure and magnetic properties of the bulk samples were carried out by X-ray diffraction, electron microscopy and magnetic measurements. The relation of the structural features and magnetic characteristics of the bulk coating to the main parameters of the deposition regimes was determined. Optimized plasma spray deposition parameters allowed obtaining bulk glassy samples with magnetic parameters that are not inferior to the characteristics of a thermally treated rapidly quenched ribbon with the same composition. It was found that the bulk amorphous coatings can be characterized as a heterophase system. The relaxation annealing of the Co58Ni10Fe5B16Si11 bulk coating leads to a phase transition in this alloy in the precrystallization temperature range. The magnetic properties of the both kinds of coatings are correlated with changes in the microstructure. The appearance of nanocrystalline phase with TC640 K during relaxation heat treatment leads to a decrease of the coercivity and to an increase of the permeability. A comparison between the magnetic properties of the CoNiFe-BSi coating and (CoNiFe-BSi)-Al2O3, composite coating is carried out.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bulgakov E. N., Sadreev A. F.
Заглавие : Resonant bending of silicon nanowires by incident light
Место публикации : Opt. Lett. - 2020. - Vol. 45, Is. 19. - P.5315-5318. - ISSN 01469592 (ISSN), DOI 10.1364/OL.406109
Примечания : Cited References: 29
Аннотация: Coupling of two dielectric wires with a rectangular cross section gives rise to bonding and anti-bonding resonances. The latter is featured by extremal narrowing of the resonant width for variation of the aspect ratio of the cross section and distance between wires. A plane wave resonant to this anti-bonding resonance gives rise to unprecedent enhancement of the optical forces up to several nano Newtons per micrometer length of the wires. The forces oscillate with the angle of incidence of the plane wave but always try to repel the wires. If the wires are fixed at the ends, the light power 1.5mW/µm2 bends wires with length 50 µm by order 100 nm.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Visotin M. A., Tarasov I. A., Fedorov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Prediction of orientation relationships and interface structures between α-, β-, γ-FeSi2 and Si phases
Коллективы : Russian Science FoundationRussian Science Foundation (RSF) [16-13-00060-Pi]
Место публикации : Acta Crystallogr. B. - 2020. - Vol. 76. - P.469-482. - ISSN 2052-5206(eISSN), DOI 10.1107/S2052520620005727
Примечания : Cited References: 85. - The following funding is acknowledged: Russian Science Foundation (grant No. 16-13-00060-Pi).
Предметные рубрики: THERMAL-EXPANSION
BETA-FESI2 FILMS
GROWTH
SILICON
DIFFRACTION
Аннотация: A pure crystallogeometrical approach is proposed for predicting orientation relationships, habit planes and atomic structures of the interfaces between phases, which is applicable to systems of low-symmetry phases and epitaxial thin film growth. The suggested models are verified with the example of epitaxial growth of α-, γ- and β-FeSi2 silicide thin films on silicon substrates. The density of near-coincidence sites is shown to have a decisive role in the determination of epitaxial thin film orientation and explains the superior quality of β-FeSi2 thin grown on Si(111) over Si(001) substrates despite larger lattice misfits. Ideal conjunctions for interfaces between the silicide phases are predicted and this allows for utilization of a thin buffer α-FeSi2 layer for oriented growth of β-FeSi2 nanostructures on Si(001). The thermal expansion coefficients are obtained within quasi-harmonic approximation from the DFT calculations to study the influence of temperature on the lattice strains in the derived interfaces. Faster decrease of misfits at the α-FeSi2(001)||Si(001) interface compared to γ-FeSi2(001)||Si(001) elucidates the origins of temperature-driven change of the phase growing on silicon substrates. The proposed approach guides from bulk phase unit cells to the construction of the interface atomic structures and appears to be a powerful tool for the prediction of interfaces between arbitrary phases for subsequent theoretical investigation and epitaxial film synthesis.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Filicheva J. A., Sorokin P. B.
Заглавие : The study of vibration properties of silicon nanowires
Коллективы : "Trends in Nanomechanics and Nanoengineering", workshop, Сибирский федеральный университет, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : Workshop "Trends in Nanomechanics and Nanoengineering" : book of abstracts/ предс. сем. K. S. Aleksandrov ; зам. предс. сем.: G. S. Patrin, S. G. Ovchinnikov ; чл. лок. ком.: N. N. Kosyrev, A. S. Fedorov [et al]. - 2009. - P.35
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Demin V. A., Sorokin P. B., Avramov P. V., Chernozatonskii L. A.
Заглавие : Atomic structure and electronic properties of beta-phase silicon nanowires
Коллективы : "Trends in Nanomechanics and Nanoengineering", workshop, Сибирский федеральный университет, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : Workshop "Trends in Nanomechanics and Nanoengineering" : book of abstracts/ предс. сем. K. S. Aleksandrov ; зам. предс. сем.: G. S. Patrin, S. G. Ovchinnikov ; чл. лок. ком.: N. N. Kosyrev, A. S. Fedorov [et al]. - 2009. - P.36
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Lukyanenko A. V., Shanidze L. V., Volochaev M. N., Zelenov F. V., Baron F. A., Yakovlev I. A., Tarasov I. A., Bondarev I. A., Varnakov S. N., Ovchinnikov S. G., Volkov N. V., Tarasov A. S.
Заглавие : Transport properties of spintronic devices fabricated from ferromagnet/silicon hybrid structures
Коллективы : Российская академия наук, Уральское отделение РАН, Институт физики металлов им. М. Н. Михеева Уральского отделения РАН, Уральский федеральный университет им. первого Президента России Б.Н. Ельцина, Российский фонд фундаментальных исследований, Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : Euro-asian symposium "Trends in magnetism" (EASTMAG-2019): Book of abstracts/ чл. конс. ком.: S. G. Ovchinnikov, N. V. Volkov [et al.] ; чл. прогр. ком. D. M. Dzebisashvili [et al.]. - 2019. - Vol. 1. - Ст.A.O8. - P.66-67. - ISBN 978-5-9500855-7-4 (Шифр В33/E12-125657784)
Примечания : Cited References: 2. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund by project No. 18-42-243022
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Babkina I. V., Volochaev M. N., Zhilova O. V., Kalinin Y. E., Kashirin M. A., Sitnikov A. V., Chehonadskih M. V., Yanchenko L. I.
Заглавие : Effect of Heat Treatment on the Stability of Nanosized (Co40Fe40B20)34(SiO2)66/ZnO/In2O3 Multilayers
Место публикации : Bull. Russ. Acad. Sci. Phys. - 2020. - Vol. 84, Is. 9. - P.1100-1103. - ISSN 10628738 (ISSN), DOI 10.3103/S1062873820090051
Примечания : Cited References: 11. - This work was supported by the RF Ministry of Science and Higher Education as part of State Task no. FZGM-2020-0007
Аннотация: An investigation is performed of the thermal stability and phase transformations of thin-film heterogeneous [(Co40Fe40B20)34(SiO2)66/ZnO/In2O3]85 multilayers obtained via ion beam sputtering. The system contains 85 layers, each consisting of a (Co40Fe40B20)34(SiO2)66 composite layer and ZnO and In2O3 semiconductor spacers. The sample structure in the initial state and after heat treatment is studied by means of X-ray diffraction. It is shown that the samples are stable at temperatures of up to 500°С. Zn2SiO4, InBO3, CoFe, and In2O3 phases form during annealing.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov I. A., Visotin M. A., Varnakov S. N., Ovchinnikov S. G., Farle M.
Заглавие : Growth of α-FeSi2 nanocrystals on silicon surface: the impact of gold and the Si/Fe flux ratio, the origin and the prediction of α/Si orientation relationships and interface structures
Коллективы : International workshop on functional MAX-materials, Kirensky Institute of Physics
Место публикации : International workshop on functional MAX-materials (1st FunMax). - 2020. - P.11
Примечания : Cited references: 2. - The study was carried out with the financial support of the Government of the Russian Federation within the framework of a grant for the creation of world-class laboratories (Agreement No. 075-15-2019-1886)
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10.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov I. A., Smolyarova T. E., Yakovlev I. A., Nemtsev I. V., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Modification of optical and magneto-optical response of highly textured Au3Fe1-x/Fe Janus-like nanocrystals grown on amorphous silicon dioxide surface
Коллективы : International workshop on functional MAX-materials, Kirensky Institute of Physics
Место публикации : International workshop on functional MAX-materials (1st FunMax). - 2020. - P.22
Примечания : The study was carried out with the financial support of the Government of the Russian Federation within the framework of a grant for the creation of world-class laboratories (Agreement No. 075-15-2019-1886)
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11.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov A. S., Lukyanenko A. V., Smolyarova T. E., Shanidze L. V., Yakovlev I. A., Volkov N. V.
Заглавие : Silicon nanowire based biosensor for detection of organic molecules
Коллективы : Aptamers in Russia, international conference
Место публикации : Aptamers in Russia, international conference (1 ; 2019 ; Aug. 27-30 ; Krasnoyarsk). Molecular Therapy - Nucleic Acids: book of abstracts of the 1st Int. conf. "Aptamers in Russia 2019". - 2019. - Vol. 17, Suppl. 1. - P.4-5
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12.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov I. A., Smolyarova T. E., Yakovlev I. A., Nemtsev I. V., Varnakov S. N., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Modification of optical and magneto-optical response of highly textured Au3Fe1-x/Fe Janus-like nanocrystals grown on amorphous silicon dioxide surface
Коллективы : International Online Workshop on the properties of Functional MAX-materials, Kirensky Institute of Physics, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : 1st FunMAX Workshop 2020: Book of Abstracts. - 2020. - P22
Примечания : The study was carried out with the financial support of the Government of the Russian Federation within the framework of a grant for the creation of world-class laboratories (Agreement No. 075-15-2019-1886).
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13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balatskiy D. V., Kraynova G. S., Plotnikov V. S., Ilin N. V., Tkachev V. V., Knyazev Yu. V.
Заглавие : Magnetic Properties of Fe–Cu–Nb–Si–B Spinning Ribbons
Место публикации : Bull. Russ. Acad. Sci. Phys. - 2020. - Vol. 84, Is. 9. - P.1126-1130. - ISSN 10628738 (ISSN), DOI 10.3103/S1062873820090063
Примечания : Cited References: 7
Аннотация: Dependences of relative saturation magnetization on temperature are measured for amorphous nanocrystalline ribbons of Finemet-type FeCu1Nb3Si13.5B8, FeCu1Nb3Si13B6, and FeCu1Nb3Si13B13 compositions. The character of the structural relaxation of amorphous alloys is established by means of Mossbauer spectroscopy, and the main magnetic characteristics are determined. It is found that the structural relaxation of amorphous ribbon proceeds in several stages upon annealing.
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14.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Borodina U., Goryainov S., Oreshonkov A. S., Shatskiy A., Rashchenko S.
Заглавие : Raman study of 3.65 A-phase MgSi(OH)6 under high pressure and the bands assignment
Место публикации : High Pressure Res. - 2020. - Vol. 40. Is. 4. - P.495-510. - ISSN 08957959 (ISSN), DOI 10.1080/08957959.2020.1830078
Примечания : Cited References: 43. - This work was supported by the Russian Federation state assignment of Institute of Geology and Mineralogy of SB RAS and Institute of Physics of Federal Research Center KSC SB RAS and the Russian Foundation for Basic Research (Grant No. 18-05-00966)
Аннотация: 3.65 Å-phase (or hydroxide-perovskite), MgSi(OH)6, is a representative of dense hydrous magnesium silicates (DHMS) with maximum water content (up to ∼35 wt.% H2O) and thus is of interest as one of the largest repositories of water among all the known hydrous phases. Sample of 3.65 Å-phase, grown in DIA-type multianvil apparatus, was studied by Raman spectroscopy under pressure up to ∼7 GPa with diamond anvil cell. Interpretation of the Raman spectrum was carried out using lattice-dynamical simulations within ab initio DFT method (CASTEP code). Additionally, OH-stretching bands are analyzed with two phenomenological models: empirical model by Novak and Libowitzky, using correlation between O–O distance and the wavenumber of the OH-stretching band, and theoretical model, using double Morse potentials of hydrogen bond O–H···O. Upon the pressure increase, octahedral and bending δ(ОН) vibrations exhibit linear positive pressure shift, whereas wavenumbers of the ОН-stretching modes show inverse pressure dependence.
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15.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Visotin M. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Growth of α-FeSi2 nanocrystals on silicon surface: the impact of gold and the Si/Fe flux ratio, the origin and the prediction of α/Si orientation relationships and interface structures
Коллективы : International Online Workshop on the properties of Functional MAX-materials, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : 1st FunMAX Workshop 2020: Book of Abstracts/ , Ин-т физики им. Л.В. Киренского. - 2020. - P11
Примечания : Cited References: 2. - The study was carried out with the financial support of the Government of the Russian Federation within the framework of a grant for the creation of world-class laboratories (Agreement No. 075-15-2019-1886).
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16.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Lukyanenko A. V., Tarasov A. S., Bondarev I. A., Rautskii M. V., Smolyarova T. E., Matsynin A. A., Zelenov F. V., Yakovlev I. A., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Silicon nanowire field-effect transistors. Technology and characterization
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials, Азиатская школа-конференция по физике и технологии наноструктурированных материалов, Институт автоматики и процессов управления ДВО РАН, Дальневосточный федеральный университет
Место публикации : Fourth Asian school-conference on physics and technology of nanostructured materials (ASCO-NANOMAT 2018): proceedings. - Vladivostok: Dalnauka, 2018. - P.111
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17.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Smolyakov D. A., Volkov N. V., Masyugin A. N., Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Volochaev M. N., Yakovlev I. A.
Заглавие : Investigation of silicon-based hybrid structures of different composition
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials, Азиатская школа-конференция по физике и технологии наноструктурированных материалов, Институт автоматики и процессов управления ДВО РАН, Дальневосточный федеральный университет
Место публикации : Fourth Asian school-conference on physics and technology of nanostructured materials (ASCO-NANOMAT 2018): proceedings. - Vladivostok: Dalnauka, 2018. - Ст.II.25.04o. - P.155
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18.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Pushkarev, Roman, Fainer, Nadezhda, Kirienko, Victor, Matsynin A. A., Nadolinnyy, Vladimir, Merenkov, Ivan, Trubina, Svetlana, Ehrenburg, Simon, Kvashnina, Kristina
Заглавие : SiCxNy:Fe films as a tunable ferromagnetic material with tailored conductivity
Место публикации : J. Mater. Chem. C. - 2019. - Vol. 7, Is. 14. - P.4250-4258. - ISSN 2050-7526, DOI 10.1039/c9tc00299e. - ISSN 2050-7534(eISSN)
Примечания : Cited References: 51
Предметные рубрики: ROOM-TEMPERATURE FERROMAGNETISM
SILICON CARBONITRIDE FILMS
Аннотация: Amorphous ferromagnetic materials with variable composition are promising candidates for application in rapidly-growing technological fields, such as spintronics. However, the significant downside of current state-of-the-art materials is a conductivity mismatch between the injector and the semiconductor, which often is associated with the inability to control and precisely tailor the magnetic properties and conductivity. We report on the synthesis of soft-magnetic SiCxNy:Fe films with a saturation magnetization of 20 emu cm−3 and a conductivity similar to the one of Si, which is crucial for possible applications. XRD with synchrotron radiation and EXAFS revealed the complex composite structure of the films: crystals of Fe3Si, Fe5Si3, SiC and graphite are embedded into the amorphous matrix of SiCxNy. Variation of the deposition conditions allowed us to separately control the magnetic properties through the iron concentration and the conductivity of the material through the amorphous SiCxNy matrix composition. The reported results revealed significant potential of SiCxNy:Fe films as a prospective object for analysis of spin-polarized transport in amorphous semiconductors and for application in the field of spintronics.
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19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Lukyanenko A. V., Bondarev I. A., Rautskii M. V., Baron F. A., Smolyarova T. E., Yakovlev I. A., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Fabrication and DC/AC characterization of 3-terminal ferromagnet/silicon spintronics devices
Место публикации : Semiconductors. - 2018. - Vol. 52, Is. 14. - P.1875–1878. - ISSN 1063-7826, DOI 10.1134/S1063782618140312. - ISSN 1090-6479 (eISSN)
Примечания : Cited References: 10. - The work was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund project no. 18-42-243022. This work is partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (project II.8.70) and Fundamental research program of the Presidium of the RAS no. 32 “Nanostructures: physics, chemistry, biology, basics of technologies”.
Аннотация: CMOS and SOI technology compatible structures and devices are currently intensively investigated by many research groups, since various effects observed in such structures can be relatively easy implemented in electronic devices thereby expanding their functionality. The most promising is the research and development of spintronic devices, which will allow using both electron charge and spin degrees of freedom for transmission, storage and processing of information. In this work we report the fabrication process of 3-terminal (3-T) ferromagnet/silicon devices of two types. First is the planar Fe3Si/Si 3-T structure with 5 μm gap between closest ferromagnetic electrodes. Second is silicon nanowire back-gate transistor with Fe film source and drain synthesized on SOI substrate. Transport and magnetotransport properties of both devices are investigated.
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20.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Lundin A. A., Zobov V. E.
Заглавие : Asymptotic similarity of time correlation functions and shape of the 13C and 29Si NMR spectra in diamond and silicon
Коллективы : Institute of Chemical Physics of the Russian Academy of Science [0082-2018-0005, TSITIS AAAA-A18-118020690203]
Место публикации : J. Exp. Theor. Phys. - 2018. - Vol. 127, Is. 2. - P.305-315. - ISSN 1063-7761, DOI 10.1134/S1063776118080216. - ISSN 1090-6509(eISSN)
Примечания : Cited References: 47. - We thank V.A. Atsarkin, V.V. Demidov, F.S. Dzheparov, and E. B. Feldman for the discussion of our results. This work was supported by a subsidy allocated by the Institute of Chemical Physics of the Russian Academy of Science for the State assignment, theme 0082-2018-0005, code TSITIS AAAA-A18-118020690203.
Предметные рубрики: SPIN SYSTEMS
LINE-SHAPES
RELAXATION
SOLIDS
PARAMAGNETS
RESONANCE
Аннотация: Based on the proposed theory, we have investigated the shape of the NMR absorption spectra for 13C and 29Si nuclei in diamond and silicon crystals attributable to the internuclear dipole–dipole interaction. In accordance with the available experimental data, we have considered both crystals with a 100% content of magnetoactive isotopes and crystals with a comparatively low dilution by nonmagnetic nuclei. The time correlation functions (the first of which is the Fourier transform of the NMR spectrum) arising in an infinite chain of coupled differential equations are shown to be mutually similar with a slight time delay. The proposed theory allows the spectrum to be calculated analytically. The results obtained agree satisfactorily with the experimental ones. It is noted that the mutual similarity of the time correlation functions is probably a corollary of the development of dynamical chaos in the system.
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