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Lateral photovoltaic effect in silicon-based hybrid structures under external magnetic field / I. A. Bondarev, M. V. Rautskii, N. V. Volkov [et al.] // Mater. Sci. Semicond. Process. - 2023. - Vol. 167. - Ст. 107786, DOI 10.1016/j.mssp.2023.107786. - Cited References: 32 . - ISSN 1369-8001. - ISSN 1873-4081
Кл.слова (ненормированные):
Lateral photovoltaic effect -- MIS structures -- Interface states -- Schottky field
Аннотация: Charge transport in semiconductor devices is highly sensitive to light, which opens up wide application prospects. The lateral photovoltaic effect (LPE) is widely used in position sensitive detectors due to its high sensitivity to the light spot position. We report on the features of the LPE in silicon-based metal/insulator/semiconductor structures at helium temperatures. To investigate the LPE, Fe/SiO2/p-Si and Mn/SiO2/n-Si structures have been fabricated by molecular beam epitaxy. It has been found by studying the lateral photovoltage that the SiO2/Si interface plays a significant role in transport of photogenerated carriers, mainly via the interface states, which induce electron capture/emission processes at certain temperatures. The value of the photovoltage is likely affected not only by the metallic film thickness, but also by the substrate conductivity type and Schottky barrier. The effect of the magnetic field on the LPE is driven by two mechanisms. The first one is the well-known action of the Lorentz force on photogenerated carriers and the second one is shifting of the interface state energy levels. Basically, the magnetic field suppresses the contribution of the interface states to the LPE, which suggests that the interface-induced transport can be controlled magnetically.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russia
Federal Research Center “Krasnoyarsk Scientific Center of the Siberian Branch of the Russian Academy of Sciences”, Krasnoyarsk, 660036, Russia
Siberian Federal University, Institute of Engineering Physics and Radio Electronics, Krasnoyarsk, 660041, Russia

Доп.точки доступа:
Bondarev, I. A.; Бондарев, Илья Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Volkov, N. V.; Волков, Никита Валентинович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Yakovlev, I. A.; Яковлев, Иван Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Tarasov, A. S.; Тарасов, Антон Сергеевич
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Density-functional study of the Si/SiO2 interfaces in short-period superlattices: Vibrational states and Raman spectra / M. Smirnov, E. Roginskii, A. Savin [et al.] // Photonics. - 2023. - Vol. 10, Is. 8. - Ст. 902, DOI 10.3390/photonics10080902. - Cited References: 61. - The study was supported by grants from the Russian Science Foundation (project No. 22-22-20021) and the Saint-Petersburg Science Center (project No. 32/2022), using the resources of the Computing Center and the Center for Optical and Laser Materials Research at the Research Park of St. Petersburg State University. - The study was performed using the resources of the Computing Center and the Center for Optical and Laser Materials Research at the Research Park of St. Petersburg State University. The authors thank Konstantin Smirnov for his valuable advice. The calculations were also performed in part using the facilities of the JSCC supercomputer center at RAS and the Konstantinov computational center at the Ioffe Institute . - ISSN 2304-6732
Кл.слова (ненормированные):
silicon -- cristobalite -- interface -- superlattice -- Raman spectra -- DFT modelling
Аннотация: Raman spectroscopy has proven its effectiveness as a highly informative and sensitive method for the nondestructive analysis of layered nanostructures and their interfaces. However, there is a lack of information concerning the characteristic phonon modes and their activity in Si/SiO2 nanostructures. In order to overcome this problem, the phonon states and Raman spectra of several Si/SiO2 superlattices (SL) with layer thicknesses varied within 0.5–2 nm are studied using DFT-based computer modeling. Two types of structures with different interfaces between crystalline silicon and SiO2 cristobalite were studied. A relationship between the phonon states of heterosystems and the phonon modes of the initial crystals was established. Estimates of the parameters of deformation potentials are obtained, with the help of which the shifts of phonon frequencies caused by elastic strains in the materials of the SL layers are interpreted. The dependence of intense Raman lines on the SL structure has been studied. Several ways have been proposed to use this information, both for identifying the type of interface and for estimating the structural parameters. The obtained information will be useful for the spectroscopic characterization of the silicon/oxide interfaces.

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Держатели документа:
Faculty of Physics, Saint-Petersburg State University, Universitetskaya nab. 7/9, Saint-Petersburg 199034, Russia
Laboratory of Spectroscopy of Solid State, Ioffe Institute, Politehnicheskaya St. 26, Saint-Petersburg 194021, Russia
Laboratory of Molecular Spectroscopy, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Akademgorodok St. 50/38, Krasnoyarsk 660036, Russia
School of Engineering and Construction, Siberian Federal University, Svobodny pr. 82, Krasnoyarsk 660041, Russia
Center for Optical and Laser Materials Research, Research Park, Saint-Petersburg State University, Universitetskaya nab. 7/9, Saint-Petersburg 199034, Russia

Доп.точки доступа:
Smirnov, Mikhail; Roginskii, Evgenii; Savin, Aleksandr; Oreshonkov, A. S.; Орешонков, Александр Сергеевич; Pankin, Dmitrii
}
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Study of magnetic iron oxide nanoparticles coated with silicon oxide by ferromagnetic method / I. G. Vazhenina, S. V. Stolyar, A. V. Tyumentsev [et al.] // Phys. Solid State. - 2023. - Vol. 65, Is. 6. - P. 884-888, DOI 10.21883/PSS.2023.06.56095.01H. - Cited References: 20. - The study was supported by grant No. 22-14-20020 provided by the Russian Science Foundation, Krasnoyarsk Regional Science Foundation . - ISSN 1063-7834. - ISSN 1090-6460
Кл.слова (ненормированные):
iron oxide nanoparticles -- ferromagnetic resonance -- superparamagnetism -- blocking temperature
Аннотация: agnetic nanoparticles of magnetite with a size of ~8 nm synthesized with a different type of coating were studied by ferromagnetic resonance in the temperature range from 7 to 300 K. The features of the experimental temperature dependences of the parameters of the ferromagnetic resonance curve (the magnitude of the resonant field, line width and intensity) and their approximation allowed us to estimate the values of characteristic temperatures. Firstly, the value of the Vervey temperature and the dependence of its value on the type of coating were determined. Secondly, the temperature of transition of nanoparticles to the superparamagnetic state (blocking temperature) and the temperature range within which the magnetic structure of the outer shell of the magnetic nanoparticle is in the spin glass state are established.

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Публикация на русском языке Исследование магнитных наночастиц оксида железа, покрытых оксидом кремния, методом ферромагнитного резонанса [Текст] / И. Г. Важенина, С. В. Столяр, А. В. Тюменцева [и др.]. - 5 с. // Физ. твердого тела. - 2023. - Т. 65 Вып. 6. - С. 923-927

Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB, Russian Academy of Sciences, Krasnoyarsk, Russia
Siberian Federal University, Krasnoyarsk, Russia
Krasnoyarsk Scientific Center of the Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk, Russia
Krasnoyarsk Scientific Center of the Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk, Russia
Krasnoyarsk State Medical University named after Prof. V.F. Voyno-Yasenetsky, Ministry of Health of Russia, Krasnoyarsk, Russia

Доп.точки доступа:
Vazhenina, I. G.; Важенина, Ирина Георгиевна; Stolyar, S. V.; Tyumentsev, A. V.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Iskhakov, R. S.; Исхаков, Рауф Садыкович; Komogortsev, S. V.; Комогорцев, Сергей Викторович; Pyankov, V. F.; Nikolaeva, E. D.; Nanophysics and Nanoelectronics, International Symposium(27 ; 13-16 March 2023 ; Nizhny Novgorod, Russia)
}
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Exceptional points in periodic array of silicon rods / G. Shadrina, E. Bulgakov, A. Sadreev, K. Pichugin // Appl. Phys. Lett. - 2023. - Vol. 123, Is. 21. - Ст. 211104, DOI 10.1063/5.0173550. - Cited References: 37 . - ISSN 0003-6951. - ISSN 1077-3118
Аннотация: We find numerically the complex eigenvalues in grating composed of infinitely long silicon rods of rectangular cross section and show existence of exceptional points (EPs) in parametric space of structural scales and wave vector along the rods. The EPs have sufficiently small imaginary parts due to their proximity to bound states in the continuum. This enables to trace the resonant frequencies in the transmission around the EP and, accordingly, to identify the EP by bifurcation of the transmission. We present generic coupled mode theory to elucidate this effect. We also show that structural fluctuations of grating preserve EP but obscures their observation because of inhomogeneous broadening of transmission peaks.

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Держатели документа:
Institute of Computational Modelling, SB RAS, Krasnoyarsk 660036, Russia
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Shadrina, Galina; Bulgakov, E. N.; Булгаков, Евгений Николаевич; Sadreev, A. F.; Садреев, Алмаз Фаттахович; Pichugin, K. N.; Пичугин, Константин Николаевич
}
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    Thermokinetic study of aluminum-induced crystallization of a-Si: The effect of Al layer thickness / S. M. Zharkov, V. V. Yumashev, E. T. Moiseenko [et al.] // Nanomaterials. - 2023. - Vol. 13, Is. 22. - Ст. 2925, DOI 10.3390/nano13222925. - Cited References: 70. - This work was supported by the Russian Science Foundation under grant #22-13-00313 . - ISSN 2079-4991
   Перевод заглавия: Термокинетическое исследование кристаллизации a-Si, индуцированной алюминием: влияние толщины слоя Al
Кл.слова (ненормированные):
amorphous silicon -- Al/Si -- nanolayer -- multilayer film -- metal-induced crystallization -- aluminum-induced crystallization -- kinetics -- activation energy -- enthalpy -- simultaneous thermal analysis (STA)
Аннотация: The effect of the aluminum layer on the kinetics and mechanism of aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) in (Al/a-Si)n multilayered films was studied using a complex of in situ methods (simultaneous thermal analysis, transmission electron microscopy, electron diffraction, and four-point probe resistance measurement) and ex situ methods (X-ray diffraction and optical microscopy). An increase in the thickness of the aluminum layer from 10 to 80 nm was found to result in a decrease in the value of the apparent activation energy Ea of silicon crystallization from 137 to 117 kJ/mol (as estimated by the Kissinger method) as well as an increase in the crystallization heat from 12.3 to 16.0 kJ/(mol Si). The detailed kinetic analysis showed that the change in the thickness of an individual Al layer could lead to a qualitative change in the mechanism of aluminum-induced silicon crystallization: with the thickness of Al ≤ 20 nm. The process followed two parallel routes described by the n-th order reaction equation with autocatalysis (Cn-X) and the Avrami–Erofeev equation (An): with an increase in the thickness of Al ≥ 40 nm, the process occurred in two consecutive steps. The first one can be described by the n-th order reaction equation with autocatalysis (Cn-X), and the second one can be described by the n-th order reaction equation (Fn). The change in the mechanism of amorphous silicon crystallization was assumed to be due to the influence of the degree of Al defects at the initial state on the kinetics of the crystallization process.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk 660036, Russia
Laboratory of Electron Microscopy, Siberian Federal University, Krasnoyarsk 660041, Russia
Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Zharkov, S. M.; Жарков, Сергей Михайлович; Yumashev, V. V.; Moiseenko, E. T.; Altunin, R. R.; Solovyov, L. A.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Zeer, G. M.; Nikolaeva, N. S.; Belousov, O. V.
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    Protein biosensor based on Schottky barrier nanowire field effect transistor / T. E. Smolyarova, L. V. Shanidze, A. V. Lukyanenko [et al.] // Talanta. - 2022. - Vol. 239. - Ст. 123092, DOI 10.1016/j.talanta.2021.123092. - Cited References: 44. - The reported study was funded by RFBR according to the research project № 20-32-90134. The authors thank RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science (projects nos. 20-42-243007 and 20-42-240013) and the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886) for financial support. Electron microscopy investigations were conducted with the help of equipment of the Krasnoyarsk Territorial Shared Resource Center, Krasnoyarsk Scientific Center, Russian Academy of Sciences . - ISSN 0039-9140. - ISSN 1873-3573
   Перевод заглавия: Биосенсор для белков на основе полевого нанопроволочного транзистора с барьером Шоттки
Кл.слова (ненормированные):
Silicon-on-insulator -- Schottky contacts FET -- Si nanowire biosensor -- Back gate nanowire FET
Аннотация: A top-down nanofabrication approach involving molecular beam epitaxy and electron beam lithography was used to obtain silicon nanowire-based back gate field-effect transistors with Schottky contacts on silicon-on-insulator (SOI) wafers. The resulting device is applied in biomolecular detection based on the changes in the drain-source current (IDS). In this context, we have explained the physical mechanisms of charge carrier transport in the nanowire using energy band diagrams and numerical 2D simulations in TCAD. The results of the experiment and numerical modeling matched well and may be used to develop novel types of nanowire-based biosensors.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russia
Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russia
Institute of Biophysics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russia
Siberian Federal University, Krasnoyarsk, 660041, Russia
Krasnoyarsk State Medical University, Krasnoyarsk, 660022, Russia

Доп.точки доступа:
Smolyarova, T. E.; Смолярова, Татьяна Евгеньевна; Shanidze, Lev V.; Шанидзе, Лев Викторович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Baron, F. A.; Барон, Филипп Алексеевич; Krasitskaya, Vasilisa V.; Kichkailo, Anna S.; Tarasov, A. S.; Тарасов, Антон Сергеевич; Volkov, N. V.; Волков, Никита Валентинович
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    Implanted gallium impurity detection in silicon by impedance spectroscopy / D. Tetelbaum, A. Nikolskaya, M. Dorokhin [et al.] // Mater. Lett. - 2022. - Vol. 308, Part B. - Ст. 131244, DOI 10.1016/j.matlet.2021.131244. - Cited References: 11. - This study was supported by the Russian Foundation for Basic Research (grant No. 20-42-243007), Ministry of Science and Higher Education of the Russian Federation (project No. 075-03-2020-191/5), as well as the Government of the Russian Federation within the framework of the Megagrant for the creation of world-class laboratories (No. 075-15-2019-1886) . - ISSN 0167-577X
   Перевод заглавия: Обнаружение имплантированной примеси галлия в кремнии методом импедансной спектроскопии
Кл.слова (ненормированные):
Silicon -- Ion implantation -- Impedance spectroscopy -- Energy levels -- Ion channeling
Аннотация: The results of determining the energy levels of boron-doped silicon implanted with gallium ions by impedance spectroscopy are reported. In the as-implanted sample the boron level remains the same and a second level appears close to the Ga-level reported in literature. In the sample annealed at 1000 °C, two levels are observed neither of which corresponds to the literature values for boron and gallium. It is assumed that in the as-implanted sample this method detects levels of gallium atoms located at a depth where ions penetrate due to the channeling effect, since a large concentration of defects at shallower depths does not allow detection of energy levels due to the Fermi level pinning. Explaining the results for the sample annealed after implantation requires additional research. The main result of this work is to establish the possibility of detecting impurity levels in ion-implanted silicon by impedance spectroscopy even in the absence of subsequent annealing.

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Держатели документа:
Research Institute of Physics and Technology, Lobachevsky University, 23/3 Gagarina Avenue, Nizhny Novgorod, 603022, Russian Federation
Kirensky Institute of Physics, 50 st. Akademgorodok, Krasnoyarsk, 660036, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, 79 Svobodny pr., Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Tetelbaum, D.; Nikolskaya, A.; Dorokhin, M.; Vasiliev, V.; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Baron, F. A.; Барон, Филипп Алексеевич; Tarasov, A. S.; Тарасов, Антон Сергеевич
}
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    Effect of magnetic and electric fields on the AC resistance of a silicon-on-insulator-based transistor-like device / D. Smolyakov, A. Tarasov, L. Shanidze [et al.] // Phys. Status Solidi A. - 2022. - Vol. 219. Is. 1. - Ст. 2100459, DOI 10.1002/pssa.202100459. - Cited References: 19. - The authors thank the Krasnoyarsk Territorial Center for Collective Use, Krasnoyarsk Scientific Center of the SB RAS, for electron microscope investigations. This study was supported by RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science, projects nos. 20-42-243007 and 20-42-240013, and by the Government of the Russian Federation, the Mega-grant for the Creation of Competitive World-Class Laboratories, agreement no. 075-15-2019-1886 . - ISSN 1862-6300. - ISSN 1862-6319
   Перевод заглавия: Влияние магнитного и электрического полей на сопротивление на переменном токе транзисторного устройства на основе кремния на изоляторе

РУБ Materials Science, Multidisciplinary + Physics, Applied + Physics, Condensed Matter
Рубрики:
NANOSTRUCTURES
Кл.слова (ненормированные):
impurities states -- magnetoimpedance -- magnetoresistance -- pseudo-MOSFET -- semiconductors -- SOI structure -- transistor
Аннотация: Herein, the AC magnetoresistance (MR) in the silicon-on-insulator (SOI)-based Fe/Si/SiO2/p-Si structure is presented. The structure is used for fabricating a back-gate field-effect pseudo-metal-oxide-semiconductor field-effect transistor (MOSFET) device. The effects of the magnetic field and gate voltage on the transport characteristics of the device are investigated. Magnetoimpedance value of up to 100% is obtained due to recharging of the impurity and surface centers at the insulator/semiconductor interface. A resistance variation of up to 1000% is found, which is caused by the voltage applied to the gate and the field effect on the band structure of the sample. Combining the magnetic and electric fields, one can either change the absolute value of the AC resistance while having the MR fixed or change the sign and character of the field dependence of the MR. The observed effects can be used in the development of magnetic-field-driven SOI-based devices and high-frequency circuits.

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Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Krasnoyarsk Sci Ctr, Siberian Branch, Akademgorodok 50,Bld 38, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Pr Svobodny 79, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Krasnoyarsk Sci Ctr, Siberian Branch, Akademgorodok 50, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Shanidze, Lev; Шанидзе, Лев Викторович; Bondarev, I. A.; Бондарев, Илья Александрович; Baron, F. A.; Барон, Филипп Алексеевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Volkov, N. V.; Волков, Никита Валентинович; RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240013]; Government of the Russian Federation; Mega-grant for the Creation of Competitive World-Class Laboratories [075-15-2019-1886]
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Synthesis and characterization of epitaxial Mn5Ge3 thin films on a silicon substrate / M. V. Rautskii, I. A. Yakovlev, A. S. Tarasov, M. A. Bondarev // VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022) : Book of abstracts / program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 1, Sect. : Spin dynamics and magnetic resonances. - Ст. B.P2. - P. 266-268. - Cited References: 2. - Support by Russian Foundation for Basic Research, the Government of the Krasnoyarsk Territory, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities, (project no. 20-42-243007) and support by Krasnoyarsk Regional Fund of Science is acknowledged . - ISBN 978-5-94469-051-7

Материалы симпозиума, ,
Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia
Siberian Federal University, Krasnoyarsk, Russia

Доп.точки доступа:
Ovchinnikov, S. G. \program com.\; Овчинников, Сергей Геннадьевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Yakovlev, I. A.; Яковлев, Иван Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Bondarev, M. A.; Бондарев, Михаил Александрович; Российская академия наук; Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН; Казанский (Приволжский) федеральный университет; Euro-Asian Symposium "Trends in MAGnetism"(8 ; 2022 ; Aug. ; 22-26 ; Kazan); "Trends in MAGnetism", Euro-Asian Symposium(8 ; 2022 ; Aug. ; 22-26 ; Kazan)
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10.

Plasma-chemical method of silicon carbide modification to obtain particles with controlled surface morphology / T. A. Shalygina, M. S. Rudenko, I. V. Nemtsev [et al.] // Tech. Phys. Lett. - 2022. - Vol. 48, Is. 2. - P. 57-60, DOI 10.21883/TPL.2022.02.53582.19042. - Cited References: 9. - This study was conducted under state assignment from the Ministry of Science and Higher Education of the Russian Federation for the ”Smart Materials and Structures“ research laboratory (project No. FEFE-2020-0015 ”Development of Multipurpose Smart Materials and Structures Based on Modified Polymer Composite Materials Remaining Functional in Extreme Conditions“) . - ISSN 1063-7850. - ISSN 1090-6533
Кл.слова (ненормированные):
silicon carbide -- plasma chemistry -- surface morphology -- nanoparticles -- nanowires -- carbon shell -- core-shell
Аннотация: A plasma-chemical method for the modification of silicon carbide particles is presented, which makes it possible to obtain particles with a controlled surface morphology. The variable parameter of particle processing was the ratio of the fraction of plasma-forming (Ar) and additional (H) gases. It was shown that at Ar/H = 100/0, the formation of a carbon shell is observed; at Ar/H ratios of 91/9 and 84/16, the particles are characterized by a carbon shell decorated with silicon nanoparticles or nanowires, respectively. The modified particles were analyzed using scanning electron microscopy and Raman spectroscopy.

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Публикация на русском языке Плазмохимический способ модификации карбида кремния для получения частиц с управляемой морфологией поверхности [Текст] / Т. А. Шалыгина, М. С. Руденко, И. В. Немцев [и др.] // Письма в Журн. технич. физ. - 2022. - Т. 48 Вып. 4. - С. 15-19

Держатели документа:
Siberian State University of Science and Technology, Krasnoyarsk, Russia
Siberian Federal University, Krasnoyarsk, Russia
Krasnoyarsk Scientific Center of the Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk, Russia
Kirensky Institute of Physics, Federal Research Center KSC SB, Russian Academy of Sciences, Krasnoyarsk, Russia
Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, Russian Academy of Sciences, Krasnoyarsk, Russia

Доп.точки доступа:
Shalygina, T. A.; Rudenko, M. S.; Nemtsev, I. V.; Немцев, Иван Васильевич; Parfenov, V. A.; Voronina, S. Yu.
}
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11.

Fedorov, A. S.
Thermal properties of porous silicon nanomaterials / A. S. Fedorov, A. S. Teplinskaia // Materials. - 2022. - Vol. 15, Is. 23. - Ст. 8678, DOI 10.3390/ma15238678. - Cited References: 50. - This study was funded by the Ministry of Science and High Education of Russian Federation, project no. FSRZ-2020-0008 . - ISSN 1996-1944
Кл.слова (ненормированные):
porous silicon -- aerogel -- thermal properties -- heat capacity -- molecular dynamics
Аннотация: The thermal properties, including the heat capacity, thermal conductivity, effusivity, diffusivity, and phonon density of states of silicon-based nanomaterials are analyzed using a molecular dynamics calculation. These quantities are calculated in more detail for bulk silicon, porous silicon, and a silicon aerocrystal (aerogel), including the passivation of the porous internal surfaces with hydrogen, hydroxide, and oxygen ions. It is found that the heat capacity of these materials increases monotonically by up to 30% with an increase in the area of the porous inner surface and upon its passivation with these ions. This phenomenon is explained by a shift of the phonon density of states of the materials under study to the low-frequency region. In addition, it is shown that the thermal conductivity of the investigated materials depends on the degree of their porosity and can be changed significantly upon the passivation of their inner surface with different ions. It is demonstrated that, in the various simulated types of porous silicon, the thermal conductivity changes by 1–2 orders of magnitude compared with the value for bulk silicon. At the same time, it is found that the nature of the passivation of the internal nanosilicon surfaces affects the thermal conductivity. For example, the passivation of the surfaces with hydrogen does not significantly change this parameter, whereas a passivation with oxygen ions reduces it by a factor of two on average, and passivation with hydroxyl ions increases the thermal conductivity by a factor of 2–3. Similar trends are observed for the thermal effusivities and diffusivities of all the types of nanoporous silicon under passivation, but, in that case, the changes are weaker (by a factor of 1.5–2). The ways of tuning the thermal properties of the new nanostructured materials are outlined, which is important for their application.

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Держатели документа:
International Research Center of Spectroscopy and Quantum Chemistry, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Teplinskaia, A. S.; Федоров, Александр Семенович
}
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12.

Low temperature behaviour of the lateral photovoltaic effect in multilayered silicon-based nanostructures / M. V. Rautskii, L. V. Shanidze, A. V. Lukyanenko [et al.] // VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022) : Book of abstracts / program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 1, Sect. : Magnetotransport, magnetooptics and magnetophotonics. - Ст. D.P3. - P. 446-447. - Cited References: 8. - Support by Krasnoyarsk Regional Fund of Science is acknowledged . - ISBN 978-5-94469-051-7

Материалы симпозиума, ,
Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia
Krasnoyarsk Scientific Center, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia

Доп.точки доступа:
Ovchinnikov, S. G. \program com.\; Овчинников, Сергей Геннадьевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Shanidze, L. V.; Шанидзе, Лев Викторович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Tarasov, A. S.; Тарасов, Антон Сергеевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Bondarev, I. A.; Бондарев, Илья Александрович; Российская академия наук; Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН; Казанский (Приволжский) федеральный университет; Euro-Asian Symposium "Trends in MAGnetism"(8 ; 2022 ; Aug. ; 22-26 ; Kazan); "Trends in MAGnetism", Euro-Asian Symposium(8 ; 2022 ; Aug. ; 22-26 ; Kazan)
}
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13.

Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect / D. A. Smolyakov, A. S. Tarasov, M. A. Bondarev [et al.] // Mater. Sci. Semicond. Process. - 2021. - Vol. 126. - Ст. 105663, DOI 10.1016/j.mssp.2021.105663. - Cited References: 21. - This study was supported by the Government of the Russian Federation , Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886) . - ISSN 1369-8001
Кл.слова (ненормированные):
Semiconductors -- Magnetoimpedance -- Impurities -- Implantation
Аннотация: A silicon structure doped with Ga using ion implantation has been investigated by admittance spectroscopy. It has been established that the presence of the Ga impurity, along with the B one, in the silicon structure leads to the appearance of the second peak in the temperature dependence of the real part of the impedance (admittance). Moreover, switching-on a magnetic field parallel to the sample plane shifts the singularities in the temperature curve to the high-temperature region. This results in the manifestation of both the positive and negative magnetoresistance effect upon temperature and magnetic field variation. It has been found by the standard admittance spectroscopy analysis of the impedance data that the energy structure of the investigated sample includes two interfacial energy levels ES1(0) = 42 meV and ES2(0) = 69.4 meV. As expected, these energies are consistent with the energies of B and Ga dopants. In a magnetic field, these levels increase by 3 meV for B and 2 meV for Ga, which induces the magnetoresistance effect. It has been demonstrated that the interfacial state-induced magnetoresistance effect can be tuned by ion implantation and dopant selection.

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Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences660036, Russian Federation
Lobachevsky State University, Nizhny Novgorod603950, Russian Federation

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Bondarev, M. A.; Бондарев, Михаил Александрович; Nikolskaya, A. A.; Vasiliev, V. K.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Volkov, N. V.; Волков, Никита Валентинович
}
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14.

Technique for fabricating ferromagnetic/silicon active devices and their transport properties / A. V. Lukyanenko, A. S. Tarasov, L. V. Shanidze [et al.] // J. Surf. Invest. - 2021. - Vol. 15, Is. 1. - P. 65-69, DOI 10.1134/S1027451021010109. - Cited References: 15. - This study was supported by the Ministry of Science and Higher Education of the Russian Federation, the Presidium of the Russian Academy of Sciences (Program no. 32 “Nanostructures: Physics, Chemistry, Biology, and Fundamentals of Technologies”), and the Russian Foundation for Basic Research, the Government of Krasnoyarsk Territory, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities, project no. 18-42-243 022 . - ISSN 1027-4510
Кл.слова (ненормированные):
silicon on insulator -- transistor -- Schottky barrier -- electron lithography -- nanowire -- reactive ion etching -- electron transport
Аннотация: Semiconductor nanowires are unique materials for studying nanoscale phenomena; the possibility of forming silicon nanowires on bulk silicon-on-insulator substrates in a top-down process ensures complete incorporation of this technology into integrated electronic systems. In addition, the use of ferromagnetic contacts in combination with the high quality of ferromagnetic–semiconductor interfaces open up prospects for the use of such structures in spintronics devices, in particular, spin transistors. A simple approach is proposed to create semiconductor nanowire-based active devices, specifically, bottom-gate Schottky-barrier field-effect transistors with a metal (Fe) source and drain synthesized on a silicon-on-insulator substrate and the transport characteristics of the designed transistors are investigated.

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Публикация на русском языке Технологический процесс изготовления активных устройств ферромагнетик/кремний и их транспортные свойства [Текст] / А. В. Лукьяненко, А. С. Тарасов, Л. В. Шанидзе [и др.] // Поверхность. - 2021. - № 1. - С. 74-79

Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Tarasov, A. S.; Тарасов, Антон Сергеевич; Shanidze, L. V.; Шанидзе, Лев Викторович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Zelenov, F. V.; Yakovlev, I. A.; Яковлев, Иван Александрович; Bondarev, I. A.; Бондарев, Илья Александрович; Volkov, N. V.; Волков, Никита Валентинович
}
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15.

Microstructure and magnetic properties of Co58Ni10Fe5B16Si11 and Co58Ni10Fe5B16Si11-Al2O3 bulk amorphous coatings prepared by plasma spraying / E. A. Denisova, I. V. Nemtsev, S. V. Telegin [et al.] // J. Phys.: Conf. Ser. - 2020. - Vol. 1582, Is. 1. - Ст. 012078DOI 10.1088/1742-6596/1582/1/012078. - Cited References: 18. - This work was funded by the Russian Foundation for Basic Research, the Government of the Krasnoyarsk Territory, the Krasnoyarsk Regional Fund for the Support of Scientific and Technical Activities (project no. 18-42-240006 Nanomaterials with magnetic properties determined by the topological features of the nanostructure). The authors thank the Krasnoyarsk Regional Center of Research Equipment of Federal Research Center “Krasnoyarsk Science Center SB RAS” for the provided equipment
Кл.слова (ненормированные):
Alumina -- Aluminum oxide -- Cobalt alloys -- Composite coatings -- Deposits -- Glass -- Heat treatment -- Industrial research -- Iron alloys -- Magnetic properties -- Magnetism -- Microstructure -- Nanocrystalline materials -- Nanocrystals -- Plasma jets -- Plasma spraying -- Silicon -- Silicon alloys
Аннотация: The bulk soft magnetic glassy Co58Ni10Fe5B16Si11 alloy specimens have been prepared by plasma spray deposition. In order to increase resistivity of the material, the bulk Co58Ni10Fe5B16Si11-Al2O3 composite materials were fabricated. The investigations of structure and magnetic properties of the bulk samples were carried out by X-ray diffraction, electron microscopy and magnetic measurements. The relation of the structural features and magnetic characteristics of the bulk coating to the main parameters of the deposition regimes was determined. Optimized plasma spray deposition parameters allowed obtaining bulk glassy samples with magnetic parameters that are not inferior to the characteristics of a thermally treated rapidly quenched ribbon with the same composition. It was found that the bulk amorphous coatings can be characterized as a heterophase system. The relaxation annealing of the Co58Ni10Fe5B16Si11 bulk coating leads to a phase transition in this alloy in the precrystallization temperature range. The magnetic properties of the both kinds of coatings are correlated with changes in the microstructure. The appearance of nanocrystalline phase with TC640 K during relaxation heat treatment leads to a decrease of the coercivity and to an increase of the permeability. A comparison between the magnetic properties of the CoNiFe-BSi coating and (CoNiFe-BSi)-Al2O3, composite coating is carried out.

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Держатели документа:
Kirensky Institute of Physics, Sb Russian Academy of Sciences, 50/38, Akademgorodok str., Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, 73 Svobodny ave., Krasnoyarsk, 660041, Russian Federation
Scientific Center, Federal Research Center Ksc Sb Ras, 50 Akademgorodok str., Krasnoyarsk, 660036, Russian Federation
Reshetnev Siberian State University of Science and Technology, 31 Krasnoyarsky Rabochy ave., Krasnoyarsk, 660037, Russian Federation
Krasnoyarsk Institute of Railways Transport, Novaja Zarja str., Krasnoyarsk, Russian Federation

Доп.точки доступа:
Denisova, E. A.; Денисова, Елена Александровна; Nemtsev, I. V.; Telegin, S. V.; Iskhakov, R. S.; Исхаков, Рауф Садыкович; Kuzovnikova, L. A.; Shepeta, N. A.; International Conference on High-Tech and Innovations in Research and Manufacturing(2020 ; 28 Feb. ; Krasnoyarsk)
}
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16.

Bulgakov, E. N.
Resonant bending of silicon nanowires by incident light / E. N. Bulgakov, A. F. Sadreev // Opt. Lett. - 2020. - Vol. 45, Is. 19. - P. 5315-5318, DOI 10.1364/OL.406109. - Cited References: 29 . - ISSN 0146-9592
Кл.слова (ненормированные):
Aspect ratio -- Elastic waves -- Silicon -- Wave propagation
Аннотация: Coupling of two dielectric wires with a rectangular cross section gives rise to bonding and anti-bonding resonances. The latter is featured by extremal narrowing of the resonant width for variation of the aspect ratio of the cross section and distance between wires. A plane wave resonant to this anti-bonding resonance gives rise to unprecedent enhancement of the optical forces up to several nano Newtons per micrometer length of the wires. The forces oscillate with the angle of incidence of the plane wave but always try to repel the wires. If the wires are fixed at the ends, the light power 1.5mW/µm2 bends wires with length 50 µm by order 100 nm.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center, KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Reshetnev Siberian State University of Science and Technology, Krasnoyarsk, 660037, Russian Federation

Доп.точки доступа:
Sadreev, A. F.; Садреев, Алмаз Фаттахович; Булгаков, Евгений Николаевич
}
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17.

Effect of Heat Treatment on the Stability of Nanosized (Co40Fe40B20)34(SiO2)66/ZnO/In2O3 Multilayers / I. V. Babkina, M. N. Volochaev, O. V. Zhilova [et al.] // Bull. Russ. Acad. Sci. Phys. - 2020. - Vol. 84, Is. 9. - P. 1100-1103, DOI 10.3103/S1062873820090051. - Cited References: 11. - This work was supported by the RF Ministry of Science and Higher Education as part of State Task no. FZGM-2020-0007 . - ISSN 1062-8738
Кл.слова (ненормированные):
After-heat treatment -- Binary alloys -- Film preparation -- II-VI semiconductors -- Ion beams -- Magnetic semiconductors -- Multilayers -- Oxide minerals -- Semiconducting indium compounds -- Semiconducting silicon compounds -- Semiconducting zinc compounds -- Silica -- Silicon -- Sputtering -- Wide band gap semiconductors -- Zinc oxide
Аннотация: An investigation is performed of the thermal stability and phase transformations of thin-film heterogeneous [(Co40Fe40B20)34(SiO2)66/ZnO/In2O3]85 multilayers obtained via ion beam sputtering. The system contains 85 layers, each consisting of a (Co40Fe40B20)34(SiO2)66 composite layer and ZnO and In2O3 semiconductor spacers. The sample structure in the initial state and after heat treatment is studied by means of X-ray diffraction. It is shown that the samples are stable at temperatures of up to 500°С. Zn2SiO4, InBO3, CoFe, and In2O3 phases form during annealing.

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Публикация на русском языке Влияние термообработки на стабильность наноразмерных многослойных структур (Co40Fe40B20)34(SiO2)66/ZnO/In2O3 [Текст] / И. В. Бабкина, М. Н. Волочаев, О. В. Жилова [и др.] // Изв. РАН. Сер. физич. - 2020. - Т. 84 № 9. - С. 1293-1296

Держатели документа:
Voronezh State Technical University, Voronezh, 394026, Russian Federation
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Babkina, I. V.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Zhilova, O. V.; Kalinin, Y. E.; Kashirin, M. A.; Sitnikov, A. V.; Chehonadskih, M. V.; Yanchenko, L. I.
}
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18.

    Oreshonkov, A. S.
    New candidate to reach Shockley–Queisser limit: The DFT study of orthorhombic silicon allotrope Si(oP32) / A. S. Oreshonkov, E. M. Roginskii, V. V. Atuchin // J. Phys. Chem. Solids. - 2020. - Vol. 137. - Ст. 109219, DOI 10.1016/j.jpcs.2019.109219. - Cited References: 44. - The authors are grateful for the support from RFBR , according to the research projects 18-03-00750 and 18-32-20011 . The computations were performed using the facilities of the Computational Center of the Research Park of St. Petersburg State University. This study was also supported by the Russian Science Foundation (project 19-42-02003 , in part of conceptualization). . - ISSN 0022-3697
   Перевод заглавия: Новый кандидат для достижения предела Шокли-Квайссера: ДФТ исследование орторомбического аллотропа кремния Si(oP32)
Кл.слова (ненормированные):
Silicon -- Allotrope -- Shockley–Queisser limit -- DFT -- Phonon
Аннотация: In the present study, the unit cell parameters and atomic coordinates are predicted for the Pbcm orthorhombic structure of Si(oP32) modification. This new allotrope of silicon is mechanically stable and stable with respect to the phonon states. The electronic structure of Si(oP32) is calculated for LDA and HSE06 optimized structures. The band gap value Eg = 1.361 eV predicted for Si(oP32) is extremely close to the Shockley–Queisser limit and it indicates that the Si(oP32) modification is a promising material for efficient solar cells. The frequencies of Raman and Infrared active vibrations is calculated for allotrope Si(oP32).

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Держатели документа:
Laboratory of Molecular Spectroscopy, Kirensky Institute of Physics Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Laboratory of Spectroscopy of Solid State, Ioffe Institute, St. Petersburg, 194021, Russian Federation
Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk, 630090, Russian Federation
Functional Electronics Laboratory, Tomsk State University, Tomsk, 634050, Russian Federation
Research and Development Department, Kemerovo State University, Kemerovom, 650000, Russian Federation

Доп.точки доступа:
Roginskii, E. M.; Atuchin, V. V.; Орешонков, Александр Сергеевич
}
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19.

Prediction of orientation relationships and interface structures between α-, β-, γ-FeSi2 and Si phases / M. A. Visotin, I. A. Tarasov, A. S. Fedorov [et al.] // Acta Crystallogr. B. - 2020. - Vol. 76. - P. 469-482, DOI 10.1107/S2052520620005727. - Cited References: 85. - The following funding is acknowledged: Russian Science Foundation (grant No. 16-13-00060-Pi). . - ISSN 2052-5206

РУБ Chemistry, Multidisciplinary + Crystallography
Рубрики:
THERMAL-EXPANSION
   BETA-FESI2 FILMS
   GROWTH
   SILICON
   DIFFRACTION
Кл.слова (ненормированные):
interface structure -- structure prediction -- orientation relationship -- near-coincidence site -- edge-to-edge matching -- iron silicide -- DFT calculations -- thermal expansion
Аннотация: A pure crystallogeometrical approach is proposed for predicting orientation relationships, habit planes and atomic structures of the interfaces between phases, which is applicable to systems of low-symmetry phases and epitaxial thin film growth. The suggested models are verified with the example of epitaxial growth of α-, γ- and β-FeSi2 silicide thin films on silicon substrates. The density of near-coincidence sites is shown to have a decisive role in the determination of epitaxial thin film orientation and explains the superior quality of β-FeSi2 thin grown on Si(111) over Si(001) substrates despite larger lattice misfits. Ideal conjunctions for interfaces between the silicide phases are predicted and this allows for utilization of a thin buffer α-FeSi2 layer for oriented growth of β-FeSi2 nanostructures on Si(001). The thermal expansion coefficients are obtained within quasi-harmonic approximation from the DFT calculations to study the influence of temperature on the lattice strains in the derived interfaces. Faster decrease of misfits at the α-FeSi2(001)||Si(001) interface compared to γ-FeSi2(001)||Si(001) elucidates the origins of temperature-driven change of the phase growing on silicon substrates. The proposed approach guides from bulk phase unit cells to the construction of the interface atomic structures and appears to be a powerful tool for the prediction of interfaces between arbitrary phases for subsequent theoretical investigation and epitaxial film synthesis.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Visotin, M. A.; Высотин, Максим Александрович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Fedorov, A. S.; Федоров, Александр Семенович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Russian Science FoundationRussian Science Foundation (RSF) [16-13-00060-Pi]
}
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20.

Tarasov, I. A.
α-FeSi2 as a buffer layer for β-FeSi2 growth: analysis of orientation relationships in silicide/Silicon, silicide/silicide heterointerfaces / I. A. Tarasov, I. A. Bondarev, A. I. Romanenko // J. Surf. Ingestig. - 2020. - Vol. 14, Is. 4. - P. 851-861, DOI 10.1134/S1027451020040357. - Cited References: 74. - The work was supported by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research project no. 18-42-243013. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70) . - ISSN 1027-4510. - ISSN 1819-7094

РУБ Physics, Condensed Matter
Рубрики:
β-FeSi2 thin-films
Thermal-expansion
Phase-transformation
Кл.слова (ненормированные):
iron silicide -- interface structure -- orientation relationship -- near coincidence site lattice -- edge-to-edge matching -- plane-to-plane matching
Аннотация: In this manuscript, we attempt to clarify the capability of utilisation of α-FeSi2 nanocrystals as a buffer layer for growth of monocrystalline/high-quality β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Iron silicides-based nanostructures have a wide spectrum of possible industrial applications in different fields. Mainly, interest in these functional materials is caused by their ecological safety and Earth’s core abundance that give us the opportunity for greener future with highly effective electronic devices. β-FeSi2 phase due to its allowed direct transition with energy close to 0.87 eV can be used as active material in light emission diodes (LED). Utilisation of buffer layers between silicon substrate and give one more tool to engineer the band structure of semiconducting β‑FeSi2 phase. We attempt to clarify the capability of the utilisation of the α-FeSi2 phase as a buffer layer for the growth of β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Possible β-FeSi2/α-,γ-,s-FeSi2/Si orientation relationships (ORs) and habit planes were examined with crystallogeometrical approaches and compared with β-FeSi2/Si ones. The lowest interplanar and interatomic spacing misfits between silicon lattice and a silicide one are observed for the pair of s-FeSi2{011}[200]/Si{022}[100] at room temperature and equal to –0.57%. The least interplanar and interatomic spacing misfit of 1.7 and 1.88%, respectively, for β-FeSi2/Si, can be decreased as low as –0.67 (interplanar) and 0.87 (interatomic) % by placing an α-FeSi2 layer between silicon and β-FeSi2 phase. It is stated that the growth of metastable γ-FeSi2 is also favourable on silicon due to low interplanar and interatomic spacing misfit (–0.77%) and a higher density of NCS in comparison with s-FeSi2. Design and technological procedure for the synthesis of possible β-FeSi2/α-FeSi2/Si heterostructure have been proposed based on the results obtained.

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Держатели документа:
RAS, Kirensky Inst Phys, Fed Res Ctr, KSC,SB, Krasnoyarsk 660036, Russia.
RAS, Nikolaev Inst Inorgan Chem, SB, Novosibirsk 630090, Russia.

Доп.точки доступа:
Bondarev, I. A.; Бондарев, Илья Александрович; Romanenko, A. I.; Тарасов, Иван Анатольевич; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science [18-42-243013]; Ministry of Education and Science of the Russian FederationMinistry of Education and Science, Russian Federation; Siberian Branch of the Russian Academy of SciencesRussian Academy of Sciences [II.8.70]
}
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