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    Киренский, Леонид Васильевич.
    Исследование упругого гистерезиса, термоупругого эффекта в никеле и никель-кремнистых сплавах [Текст] / Л. В. Киренский, З. М. Патюкова // Изв. АН СССР, Сер. физич. - 1964. - Т. 28, № 1. - С. 198-201. - Библиогр.: 8 назв. - Phys. Abstr. - 1966. - Vol. 69, 5593
   Перевод заглавия: Investigation of elastic hysteresis of the thermoelastic effect in nickel and nickel-silicon alloys

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Держатели документа:
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Вонсовский, Сергей Васильевич \предс. орг. ком.\; Патюкова, З. М.; Kirenskii, L. V.; Симпозиум по вопросам ферро- и антиферромагнетизма (1962 ; 25 июня - 7 июля ; Красноярск)
}
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Vetrov, S. Y.
Dissipative effects of the interaction of crystal-lattice surface with medium / S. Y. Vetrov, V. F. Shabanov // Phys. Status Solidi B. - 1987. - Vol. 140, Is. 1. - P. 103-112. - Cited References: 14 . - ISSN 0370-1972

РУБ Physics, Condensed Matter

Кл.слова (ненормированные):
ELECTRIC CONDUCTIVITY - Measurements -- INTERFEROMETRY -- SILICON COMPOUNDS - Thin Films -- X-RAYS - Diffraction -- DISSIPATIVE EFFECTS -- MULTIPLE-REFLECTION INTERFEROMETRY -- SILVER AND ALLOYS

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Держатели документа:
Acad of Sciences of the USSR, Krasnoyarsk, USSR, Acad of Sciences of the USSR, Krasnoyarsk, USSR

Доп.точки доступа:
Shabanov, V. F.; Шабанов, Василий Филиппович
}
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Savchenko, M. K.
High-temperature magnetic afteraction in iron and iron-silicon alloys / M. K. Savchenko, I. A. Turpanov, V. I. Efimov // Izvestiya Akademii nauk SSSR Seriya Fizicheskaya. - 1989. - Vol. 53, Is. 4. - P. 630-635. - Cited References: 10 . - ISSN 0367-6765

РУБ Physics, Multidisciplinary

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Держатели документа:
LV KIRENSKII PHYS INST,KRASNOYARSK,USSR
ИФ СО РАН
Доп.точки доступа:
Turpanov, I. A.; Турпанов, Игорь Александрович; Efimov, V. I.; Ефимов, Владимир Ильич; Савченко, Михаил Кириллович
}
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Surface bonding states of nano-crystalline diamond balls / J. L. Peng [et al.] // Int. J. Mod. Phys. B. - 2001. - Vol. 15, Is. 31. - P. 4071-4085, DOI 10.1142/S0217979201007865. - Cited References: 20 . - ISSN 0217-9792

РУБ Physics, Applied + Physics, Condensed Matter + Physics, Mathematical
Рубрики:
PLASMON RESPONSE
   POWDER
   SPECTROSCOPY
   MICROSCOPY
   SILICON
   SI(111)
Кл.слова (ненормированные):
diamond -- article -- crystal structure -- electron -- energy transfer -- nanoparticle -- particulate matter -- structure analysis -- surface property -- transmission electron microscopy
Аннотация: The rough surface of nano-crystalline diamond spheres induces surface electronic states which appear as a broadened pre-peak over approx. 15 eV at the C K-edge energy threshold for carbon in the parallel electron energy loss spectrum (PEELS). This appears to be at least partially due to 1s-pi* transitions, although typically the latter occupy a range of only 4 eV for the sp(2) edge of highly-oriented pyrollytic graphite (HOPG). No pi* electrons appear in the conduction band inside the diamond particles, where all electrons are sp(3) hybridized. PEELS data were also obtained from a chemical vapour deposited diamond film (CVDF) and gem-quality diamond for comparison with the spectra of nano-diamonds. The density of sp(2) and sp(3) states on the surface of diamond nano-crystals is calculated for simple structural models of the diamond balls, including some conjecture about surface structures. The results are used to interpret the sp(2)/sp(3) ratios measured from the PEELS spectra recorded as scans across the particles. Surface roughness at the atomic scale was also examined using high-resolution transmission electron microscopy (HRTEM) and electron nano-diffraction patterns were used to confirm the crystal structures.

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Держатели документа:
RMIT Univ, Dept Appl Phys, Melbourne, Vic 3051, Australia
Univ Sydney, Electron Microscope Unit, Sydney, NSW 2006, Australia
Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Mol Architecture Grp, Krasnoyarsk 660036, Russia
Russian Acad Sci, Siberian Branch, Inst Biophys, Krasnoyarsk 660036, Russia
Univ Melbourne, Sch Phys, Parkville, Vic 3052, Australia
ИФ СО РАН
ИБФ СО РАН
Department of Applied Physics, RMIT University, Swanston Street, Melbourne, Vic. 3051, Australia
Electron Microscope Unit, University of Sydney, NSW 2006, Australia
Molecular Architecture Group, Kirensky Institute of Physics, Institute of Biophysics, 660036 Krasnoyarsk, Russian Federation
School of Physics, University of Melbourne, Parkville, Vic. 3010, Australia

Доп.точки доступа:
Peng, J. L.; Bulcock, S.; Belobrov, P. I.; Белобров, Петр Иванович; Bursill, L. A.
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Spin-glass-like behavior of low field magnetisation in multilayer (Gd/Si/Co/Si)(n) films / G. S. Patrin [et al.] // Phys. Lett. A. - 2003. - Vol. 309, Is. 1-2. - P. 155-159, DOI 10.1016/S0375-9601(03)00169-5. - Cited References: 13 . - ISSN 0375-9601

РУБ Physics, Multidisciplinary
Рубрики:
BIQUADRATIC EXCHANGE
Кл.слова (ненормированные):
cobalt -- gadolinium -- glass -- silicon -- silicon derivative -- acceleration -- article -- film -- magnetic field -- magnetism -- molecular dynamics -- molecular interaction
Аннотация: The results of experimental investigations of magnetic properties of multilayer (Gd/Si/Co/Si)(n) films in low magnetic fields are represented. The spin-glass-like behavior of magnetization is found. The role of biquadratic exchange coupling in a forming of magnetic state of system is discussed. (C) 2003 Elsevier Science B.V. All rights reserved.

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Держатели документа:
Russian Acad Sci, LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
Krasnoyarsk State Univ, Krasnoyarsk 660041, Russia
Ural State Univ, Ekaterinburg 620083, Russia
ИФ СО РАН
L. V. Kirenskii Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Krasnoyarsk State University, prospect Svobodnyi, 79, Krasnoyarsk 660041, Russian Federation
Ural State University, prospect Lenina, 51, Ekaterinburg 620083, Russian Federation

Доп.точки доступа:
Patrin, G. S.; Патрин, Геннадий Семёнович; Vas'kovskii, V. O.; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Svalov, A. V.; Panova, M. A.
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The magnetic structure of ferromagnetic filaments of a CoNi(P) alloy in a porous silicon matrix / R. S. Iskhakov [et al.] // Tech. Phys. Lett. - 2003. - Vol. 29, Is. 4. - P. 263-266, DOI 10.1134/1.1573285. - Cited References: 12 . - ISSN 1063-7850

РУБ Physics, Applied
Рубрики:
RANDOM ANISOTROPY
   NI NANOWIRES
   NANOCRYSTALLINE
   FILMS
   CO
   FE
Аннотация: The magnetic and resonance properties of CoNi(P) alloys, synthesized by chemical deposition as films on single crystal silicon substrates and as filaments in linear pores of porous silicon substrates, were studied by magnetization and ferromagnetic resonance measurements. It is established that CoNi(P) alloys of the same composition but different morphologies occur in states characterized by different degrees of nonequilibrium, which is manifested by different modes of the magnetization approach to saturation. (C) 2003 MAIK "Nauka / Interperiodica".

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Держатели документа:
Russian Acad Sci, Siberian Div, LV Kirensky Phys Inst, Krasnoyarsk, Russia
Krasnoyarsk State Tech Univ, Krasnoyarsk, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Krasnoyarsk, Russian Federation
Krasnoyarsk Stt. Tech. University, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Iskhakov, R. S.; Исхаков, Рауф Садыкович; Komogortsev, S. V.; Комогорцев, Сергей Викторович; Chekanova, L. A.; Чеканова, Лидия Александровна; Balaev, A. D.; Балаев, Александр Дмитриевич; Yuzova, V. A.; Semenova, O. V.
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Band-gap unification of partially Si-substituted single-wall carbon nanotubes / P. V. Avramov [et al.] // Phys. Rev. B. - 2006. - Vol. 74, Is. 24. - Ст. 245417, DOI 10.1103/PhysRevB.74.245417. - Cited References: 72 . - ISSN 1098-0121

РУБ Physics, Condensed Matter
Рубрики:
SILICON-CARBIDE NANOTUBES
   DENSITY-FUNCTIONAL THEORY
   TOTAL-ENERGY CALCULATIONS
   WAVE BASIS-SET
   ELECTRONIC-STRUCTURE
   AB-INITIO
   NANORODS
   EXCITATIONS
   TRANSITION
   NANOWIRES
Аннотация: The atomic and electronic structure of a set of pristine single wall SiC nanotubes as well as Si-substituted carbon nanotubes and a SiC sheet was studied by the local-density approximation (LDA) plane wave band structure calculations. Consecutive substitution of carbon atoms by Si leads to a gap opening in the energetic spectrum of the metallic (8,8) SWCNT with approximately quadratic dependence of the band gap upon the Si concentration. The same substitution for the semiconductor (10,0) single wall carbon nanotubes (SWCNT) results in a band gap minimum (0.27 eV) at similar to 25% of Si concentration. In the Si concentration region of 12-18 %, both types of nanotubes have less than 0.5 eV direct band gaps at the Gamma-Gamma point. The calculation of the chiral (8,2) SWSi0.15C0.85NT system gives a similar (0.6 eV) direct band gap. The regular distribution of Si atoms in the atomic lattice is by similar to 0.1 eV/atom energetically preferable in comparison with a random distribution. Time dependent density functional theory (DFT) calculations showed that the silicon substitution sufficiently increases (roughly by one order of magnitude) the total probability of optical transitions in the near infrared region, which is caused by the opening of the direct band gap in metallic SWCNTs, the unification of the nature and energy of the band gaps of all SWCNT species, the large values of Si3p parallel to r parallel to Si3s radial integrals and participation of Si3d states in chemical bonding in both valence and conductance bands.

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Держатели документа:
Japan Atom Energy Res Inst, Adv Sci Res Ctr, Takasaki Branch, Takasaki, Gumma 3701292, Japan
RAS, SB, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
RAS, Inst Biochem Phys, Moscow 119991, Russia
AIST, Res Inst Computat Sci, Tsukuba, Ibaraki 3058568, Japan
Kyoto Univ, Dept Energy Sci & Technol, Sakyo Ku, Kyoto 6068501, Japan
ИФ СО РАН
Takasaki-branch, Advanced Science Research Center, Japan Atomic Energy Agency, Takasaki, 370-1292, Japan
L.V. Kirensky Institute of Physics SB RAS, 660036 Krasnoyarsk, Russian Federation
Institute of Biochemical Physics of RAS, 119991 Moscow, Russian Federation
Research Institute for Computational Science, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8568, Japan
Department of Energy Science and Technology, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan

Доп.точки доступа:
Avramov, P. V.; Аврамов, Павел Вениаминович; Sorokin, P. B.; Fedorov, A. S.; Федоров, Александр Семенович; Fedorov, D. G.; Maeda, Y.
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Chernozatonskii, L. A.
Energy and electronic properties of non-carbon nanotubes based on silicon dioxide / L. A. Chernozatonskii, P. B. Sorokin, A. S. Fedorov // Phys. Solid State. - 2006. - Vol. 48, Is. 10. - P. 2021-2027, DOI 10.1134/S1063783406100337. - Cited References: 32 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
MOLECULAR-DYNAMICS
SIO2
Аннотация: The geometric, energy, and electronic characteristics of new non-carbon nanotubes based on silicon dioxide are investigated in the framework of the local electron density functional formalism. Nanotubes are classified according to the type of rolling-up of the SiO2 sheet. It is shown that, among the entire set of considered nanotubes with different symmetries, the (6, 0) nanotubes are energetically more favorable. The densities of states for nanotubes are calculated. It is established that all nanotubes are dielectrics with a wide band gap. The band gap varies over a wide range with a change in the longitudinal strain of the nanotube.

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Держатели документа:
Russian Acad Sci, Emanuel Inst Biochem Phys, Moscow 119991, Russia
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Div, Krasnoyarsk 660036, Russia
ИФ СО РАН
Emanuel Institute of Biochemical Physics, Russian Academy of Sciences, ul. Kosygina 4, Moscow, 119991, Russian Federation
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk 660036, Russian Federation

Доп.точки доступа:
Sorokin, P. B.; Fedorov, A. S.; Федоров, Александр Семенович
}
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Arc synthesis of silicon-doped heterofullerenes in plasma at atmospheric pressure / N. V. Bulina [et al.] // Fullerenes Nanotubes and Carbon Nanostructures. - 2007. - Т. 15, № 5. - С. 395-400, DOI 10.1080/15363830701512229 . - ISSN 1536-383X. - ISSN 1536-4046

ГРНТИ

РИНЦ
Держатели документа:
Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences
Max-Planck-Institut fur Kernphysik
Доп.точки доступа:
Bulina, N. V.; Булина, Наталья Васильевна; Lopatin, V. A.; Лопатин, Владислав Александрович; Vnukova, N. G.; Внукова, Наталья Григорьевна; Osipova, I. V.; Осипова, Ирина Владимировна; Churilov, G. N.; Чурилов, Григорий Николаевич; Krtschmer, W.
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10.

Multiterminal nanowire junctions of silicon: A theoretical prediction of atomic structure and electronic properties [Text] / P. V. Avramov [et al.] // Nano Letters. - 2007. - Т. 7, № 7. - С. 2063-2067, DOI 10.1021/nl070973y . - ISSN 1530-6984. - ISSN 1530-6992

ГРНТИ

РИНЦ
Держатели документа:
Ames National Laboratory,Department of Chemistry,Iowa State University
L. V. Kirensky Institute of Physics,SB RAS
N M. Emanuel Institute of Biochemical Physics,RAS
Takasaki Branch,Advanced Science Research Center,Japan Atomic Energy Agency
Доп.точки доступа:
Avramov, P. V.; Аврамов Павел Вениаминович; Sorokin, P. B. ; Chernozatonskii, L. A. ; Gordon, M. S.
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11.

Density-functional theory study of the electronic structure of thin Si/SiO2 quantum nanodots and nanowires / P. V. Avramov [et al.] // Phys. Rev. B. - 2007. - Vol. 75, Is. 20. - Ст. 205427, DOI 10.1103/PhysRevB.75.205427. - Cited References: 63 . - ISSN 1098-0121

РУБ Physics, Condensed Matter
Рубрики:
ERBIUM ION LUMINESCENCE
   TOTAL-ENERGY CALCULATIONS
   WAVE BASIS-SET
   POROUS SILICON
   OPTICAL-PROPERTIES
   OXIDIZED SI
   SEMICONDUCTOR NANOWIRES
   PHASE-TRANSFORMATIONS
   NANOCRYSTALS
   CONFINEMENT
Аннотация: The atomic and electronic structures of a set of proposed pentagonal thin (1.6 nm in diameter) silicon/silica quantum nanodots (QDs) and nanowires (NWs) with narrow interface, as well as parent metastable silicon structures (1.2 nm in diameter), were studied using cluster B3LYP/6-31G(*) and periodic boundary condition (PBC) plane-wave (PW) pseudopotential (PP) local-density approximation methods. The total density of states (TDOS) of the smallest quasispherical QD (Si-85) corresponds well to the PBC PW PP LDA TDOS of the crystalline silicon. The elongated SiQDs and SiNWs demonstrate the metallic nature of the electronic structure. The surface oxidized layer opens the band gap in the TDOS of the Si/SiO2 species. The top of the valence band and the bottom of conduction band of the particles are formed by the silicon core derived states. The theoretical band gap width is determined by the length of the Si/SiO2 clusters and describes the size confinement effect in the experimental photoluminescence spectra of the silica embedded nanocrystalline silicon with high accuracy.

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Держатели документа:
Japan Atom Energy Agcy, Adv Sci Res Ctr, Takasaki Branch, Takasaki, Gumma 3701292, Japan
Russian Acad Sci, LV Kirensky Phys Inst, SB, Krasnoyarsk 660036, Russia
Russian Acad Sci, NM Emanuel Inst Biochem Phys, Moscow 119334, Russia
Kyoto Univ, Dept Energy Sci & Technol, Kyoto 6068501, Japan
ИФ СО РАН

Доп.точки доступа:
Avramov, P. V.; Аврамов, Павел Вениаминович; Kuzubov, A. A.; Кузубов, Александр Александрович; Fedorov, A. S.; Федоров, Александр Семенович; Sorokin, P. B.; Tomilin, F. N.; Томилин, Феликс Николаевич; Maeda, Y.
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12.

New symmetric families of silicon quantum dots and their conglomerates as a tunable source of photoluminescence in nanodevices / Avramov P.V., Fedorov D.G., Sorokin P.B., Chernozatonskii L.A., Gordon M.S. // arXiv. - 2008. - Ст. 0709.2279v1

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Доп.точки доступа:
Avramov, P.V.; Fedorov, D.G.; Sorokin, P. B.; Chernozatonskii, L.A.; Gordon, M.S.
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13.

    Atypical quantum confinement effect in silicon nanowires / P. B. Sorokin [et al.] // J. Phys. Chem. A. - 2008. - Vol. 112, Is. 40. - P9955-9964, DOI 10.1021/jp805069b. - Cited Reference Count: 25. - Гранты: This work was in part partially supported by a CREST (Core Research for Evolutional Science and Technology) grant in the Area of High Performance Computing for Multiscale and Multiphysics Phenomena from the Japan Science and Technology Agency (JST) as well as by Russian Fund of Basic Researches (grant 08-02-01096) (L.A.C.). P.V.A. acknowledges the encouragement of Dr. Keiji Morokuma, Research Leader at Fukui Institute for Fundamental Chemistry. The geometry of all presented structures was visualized by ChemCraft software.SUP25/SUP L.A.C. acknowledges I. V. Stankevich for help and fruitful discussions. P.B.S. is grateful to the Joint Supercomputer Center of the Russian Academy of Sciences for access to a cluster computer for quantum-chemical calculations. - Финансирующая организация: Japan Science and Technology Agency (JST); Russian Fund of Basic Researches [08-02-01096] . - OCT 9. - ISSN 1089-5639
Рубрики:
ELECTRONIC-STRUCTURE
   OPTICAL-PROPERTIES
   SI
   DENSITY
   WIRES
   EXCHANGE
   ATOMS
   DOTS
Кл.слова (ненормированные):
Electric wire -- Energy gap -- Gallium alloys -- Mathematical models -- Nanostructured materials -- Nanostructures -- Nanowires -- Quantum confinement -- Quantum electronics -- Semiconductor quantum dots -- Silicon -- Ami methods -- Band gaps -- Blue shifts -- Dinger equations -- Linear junctions -- Monotonic decreases -- Quantum confinement effects -- Quantum dots -- Semiempirical -- Silicon nanowires -- System sizes -- Theoretical models -- Nanocrystalline silicon -- nanowire -- quantum dot -- silicon -- article -- chemistry -- electron -- quantum theory -- Electrons -- Nanowires -- Quantum Dots -- Quantum Theory -- Silicon
Аннотация: The quantum confinement effect (QCE) of linear junctions of silicon icosahedral quantum dots (IQD) and pentagonal nanowires (PNW) was studied using DFT and semiempirical AM1 methods. The formation of complex IQD/PNW structures leads to the localization of the HOMO and LUMO on different parts of the system and to a pronounced blue shift of the band gap; the typical QCE with a monotonic decrease of the band gap upon the system size breaks down. A simple one-electron one-dimensional Schrodinger equation model is proposed for the description and explanation of the unconventional quantum confinement behavior of silicon IQD/PNW systems. On the basis of the theoretical models, the experimentally discovered deviations from the typical QCE for nanocrystalline silicon are explained.

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Держатели документа:
Siberian Fed Univ, Krasnoyarsk 660041, Russia
LV Kirenskii Inst Phys, SB RAS, Krasnoyarsk 660036, Russia
RAS, N M Emanuel Inst Biochem Phys, Moscow 119334, Russia
Kyoto Univ, Fukui Inst Fundamental Chem, Kyoto 6068103, Japan
Natl Inst Adv Ind Sci & Technol, Res Inst Computat Sci, Tsukuba, Ibaraki 3058568, Japan

Доп.точки доступа:
Sorokin, P. B.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Avramov, P. V.; Chernozatonskii, L.A.; Fedorov, D.G.
}
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14.

Defect modes in real photonic crystals / V. G. Arkhipkin [et al.] // Proceedings of CAOL 2008: 4th International Conference on Advanced Optoelectronics and Lasers. - 2008. - 4th International Conference on Advanced Optoelectronics and Lasers, CAOL 2008 (29 September 2008 through 4 October 2008, Alushta, Crimea, ) Conference code: 74830. - P183-185, DOI 10.1109/CAOL.2008.4671857 . - ISBN 9781424419746 (ISBN)
Кл.слова (ненормированные):
Detect mode -- Liquid crystal -- Photonic band gap -- Photonic crystal -- Defect modes -- Detect mode -- Number of layers -- Photonic crystal structures -- Crystal atomic structure -- Crystal structure -- Defects -- Energy gap -- Gallium alloys -- Light sources -- Liquid crystals -- Liquid lasers -- Optical devices -- Photonic band gap -- Silicon on insulator technology -- Photonic crystals
Аннотация: It is demonstrated experimentally that amplitudes of defect modes of one-dimensional photonic crystal have maximal value near edges of the photonic band gap while at the centre of the stop-band they are reduced, moreover than more number of layers in photonic crystal, the less the amplitude of defect mode at the center of the PBG. We explain such behavior of defect modes presence of losses at propagation of light in real photonic crystal structures. © 2008 IEEE.

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Держатели документа:
L.V. Kirensky Institute of Physics, Krasnoyarsk Scientific Center, SB RAS
Siberian Federal University, Krasnoyarsk 660036, Russian Federation

Доп.точки доступа:
Arkhipkin, V. G.; Архипкин, Василий Григорьевич; Gunyakov, V. A.; Гуняков, Владимир Алексеевич; Myslivets, S. A.; Мысливец, Сергей Александрович; Zyryanov, V. Ya.; Зырянов, Виктор Яковлевич; Shabanov, V. F.; Шабанов, Василий Филиппович; International Conference on Advanced Optoelectronics and Lasers(4th ; 2008 ; Apr. 29 Sep. - 04 Oct. ; Alushta, Crimea)
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15.

Quantum dots embedded into silicon nanowires effectively partition electron confinement [Text] / P. V. Avramov, P. B. Sorokin [et al.] // J. Appl. Physics. - 2008. - Vol. 104. - P054305(6)

РИНЦ

Доп.точки доступа:
Avramov, P.V.; Sorokin, P.B.; Fedorov, D.G.; Chernozatonskii, L.A.; Narumi, K.; Ovchinnikov, S.G.; Morokuma, K.
}
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16.

Sorokin, B. P.
Influence of heterogeneous external fields on propagation of bulk acoustic waves in crystals / B. P. Sorokin, A. N. Marushyak, K. S. Aleksandrov // Proceedings - IEEE Ultrasonics Symposium. - 2008. - Ст. 4803313. - P. 1472-1475, DOI 10.1109/ULTSYM.2008.0358 . - ISBN 1051-0117
Кл.слова (ненормированные):
Bulk elastic wave -- Non-homogeneous mechanical loading -- Phase velocity -- Wave surface -- Bulk acoustic waves -- Bulk elastic wave -- Bulk waves -- External fields -- Non-homogeneous -- Non-homogeneous mechanical loading -- Numerical calculation -- Small amplitude -- Wave surface -- Acoustic fields -- Crystals -- Elastic waves -- Elasticity -- Phase velocity -- Silicon compounds -- Soil structure interactions -- Waves -- Velocity
Аннотация: Formulas describing the influence of nonhomogeneous pressure on propagation of bulk waves in crystals have derived. Phase velocity for small amplitude waves in Bi12SiO20 crystal the action of non-homogeneous pressure has been . Under those conditions the behavior of the wave has researched. Numerical calculation of phase velocity of and their directions propagation changing have obtained. В©2008 IEEE.

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Доп.точки доступа:
Marushyak, A. N.; Aleksandrov, K. S.; Александров, Кирилл Сергеевич; IEEE International ultrasonics symposium(2008 ; Nov. ; 2-5 ; Beijing, China)
}
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17.

Quantum dots embedded into silicon nanowires effectively partition electron confinement / P. V. Avramov [et al.] // J. Appl. Phys. - 2008. - Vol. 104, Is. 5. - Ст. 54305, DOI 10.1063/1.2973464. - Cited References: 22. - This work was, in part, partially supported by a Core Research for Evolutional Science and Technology (CREST) grant in the area of high performance computing for multi-scale and multiphysics phenomena from the Japan Science and Technology Agency (JST) as well as by the Russian Fund of Basic Researches (Grant No. 05-02-17443) (L.A.C.). One of the authors (P.V.A.) acknowledges the encouragement of Dr. Keiji Morokuma, Research Leader at Fukui Institute. The geometry of all presented structures was visualized by ChemCraft software. SUP23/SUP L.A.C. acknowledges I. V. Stankevich for help and fruitful discussions. P.B.S. is grateful to the Joint Supercomputer Center of the Russian Academy of Sciences for access to a cluster computer for quantum-chemical calculations. . - ISSN 0021-8979

РУБ Physics, Applied
Рубрики:
OPTICAL-PROPERTIES
   POROUS SILICON
   WIRES
   PREDICTION
   GROWTH
Кл.слова (ненормированные):
Electric currents -- Electric wire -- Electronic states -- Electronic structure -- Nanostructured materials -- Nanostructures -- Nanowires -- Nonmetals -- Optical waveguides -- Plasma confinement -- Quantum confinement -- Quantum electronics -- Semiconducting silicon compounds -- Silicon -- electronic state -- Band gaps -- Electron confinements -- Electronic-structure calculations -- Embedded structures -- Quantum confinement effect -- Quantum dots -- Semi-empirical methods -- Silicon nanowires -- Silicon quantum dots -- Semiconductor quantum dots
Аннотация: Motivated by the experimental discovery of branched silicon nanowires, we performed theoretical electronic structure calculations of icosahedral silicon quantum dots embedded into pentagonal silicon nanowires. Using the semiempirical method, we studied the quantum confinement effect in the fully optimized embedded structures. It was found that (a) the band gaps of the embedded structures are closely related to the linear sizes of the longest constituting part rather than to the total linear dimension and (b) the discovered atypical quantum confinement with a plateau and a maximum can be attributed to the substantial interactions of near Fermi level electronic states of the quantum dots and nanowire segments. (c) 2008 American Institute of Physics.

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Держатели документа:
[Avramov, Pavel V.] Kyoto Univ, Fukui Inst Fundamental Chem, Kyoto 6068103, Japan
[Fedorov, Dmitri G.] Natl Inst Adv Ind Sci & Technol, Res Inst Computat Sci, Tsukuba, Ibaraki 3058568, Japan
[Sorokin, Pavel B.
Ovchinnikov, Sergei G.] LV Kirensky Inst Phys SB RAS, Krasnoyarsk 660036, Russia
[Sorokin, Pavel B.
Ovchinnikov, Sergei G.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
[Sorokin, Pavel B.
Chernozatonskii, Leonid A.] RAS, NM Emanuel Inst Biochem Phys, Moscow 119334, Russia
ИФ СО РАН
Fukui Institute for Fundamental Chemistry, Kyoto University, 34-3 Takano Nishihiraki, Sakyo, Kyoto 606-8103, Japan
Research Institute for Computational Science, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8568, Japan
L.V. Kirensky Institute of Physics, SB, RAS, 660036 Krasnoyarsk, Russian Federation
Siberian Federal University, 79 Svobodny Av., 660041 Krasnoyarsk, Russian Federation
N.M. Emanuel Institute of Biochemical Physics, RAS, 119334 Moscow, Russian Federation

Доп.точки доступа:
Avramov, P. V.; Аврамов, Павел Вениаминович; Fedorov, D. G.; Sorokin, P. B.; Chernozatonskii, L. A.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
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18.

Density functional study of 110 -oriented thin silicon nanowires / P. B. Sorokin [et al.] // Phys. Rev. B. - 2008. - Vol. 77, Is. 23. - Ст. 235417, DOI 10.1103/PhysRevB.77.235417. - Cited References: 38 . - ISSN 1098-0121

РУБ Physics, Condensed Matter
Рубрики:
ELECTRONIC-PROPERTIES
   MOLECULAR-DYNAMICS
   BUILDING-BLOCKS
   QUANTUM WIRES
   GROWTH
Аннотация: The electronic band structure and energetic stability of two types of 110 oriented silicon nanowires terminated by hydrogen atoms are studied using the density functional theory. The nanowires truncated from the bulk silicon with [100] and [111] facets and the pentagonal star-shaped nanowires with [111] facets have the lowest cohesive energies, whereas the hexagonal star-shaped ones are the highest in energy. The star-shaped nanowires have the lowest band gaps with direct and indirect transitions for pentagonal and hexagonal types, respectively. Based on the theoretical results, an interpretation of existing experimental data has been provided.

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Держатели документа:
[Sorokin, Pavel B.
Kvashnin, Alexander G.
Kvashnin, Dmitry G.
Ovchinnikov, Sergey G.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
[Sorokin, Pavel B.
Ovchinnikov, Sergey G.
Fedorov, Alexander S.] Russian Acad Sci, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
[Sorokin, Pavel B.] Russian Acad Sci, Emanuel Inst Biochem Phys, Moscow 119334, Russia
[Avramov, Pavel V.] Kyoto Univ, Fukui Inst Fundamental Chem, Kyoto 6068103, Japan
ИФ СО РАН
Siberian Federal University, 79 Svobodny Avenue, Krasnoyarsk 660041, Russian Federation
Kirensky Institute of Physics, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk 660036, Russian Federation
Emanuel Institute of Biochemical Physics, Russian Academy of Sciences, 4 Kosigina Street, Moscow 119334, Russian Federation
Fukui Institute for Fundamental Chemistry, Kyoto University, 34-3 Takano Nishihiraki, Sakyo, Kyoto 606-8103, Japan

Доп.точки доступа:
Sorokin, P. B.; Сорокин, Павел Б.; Avramov, P. V.; Аврамов, Павел Вениаминович; Kvashnin, A. G.; Квашнин А. Г.; Kvashnin, D. G.; Квашнин, Дмитрий Геннадиевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Fedorov, A. S.; Федоров, Александр Семенович
}
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19.

Magnetic and magneto-optical properties of ion-synthesized cobalt nanoparticles in silicon oxide / I. S. Edelman [et al.] // Phys. Solid State. - 2008. - Vol. 50, Is. 11. - P. 2088-2094, DOI 10.1134/S1063783408110140. - Cited References: 15. - We would like to thank the Alexander von Humboldt Foundation (Germany) for the financial support of A. L. Stepanov in Germany.This study was supported by the Russian Foundation for Basic Research (project nos. 04-02-97505- r_ofi, 06-02-08147_ofi, 07-02-92174- CNRS) and the Branch of General Physics and Astronomy of the Russian Academy of Sciences (Program "New Materials and Structures"). R. D. Ivantsov acknowledges the support of the Russian Science Support Foundation. . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
NANOCLUSTERS
Кл.слова (ненормированные):
75 -- 60 -- Ej -- 78 -- 20 -- Ls -- 61 -- 46 -- Df
Аннотация: The magnetic and magneto-optical properties of ion-synthesized cobalt nanoparticles in the amorphous silicon oxide matrix are investigated as a function of the implantation dose. The analysis of the field dependences of the magnetization and the magneto-optical Faraday and Kerr effects demonstrates that, as the ion implantation dose increases, the superparamagnetic behavior of an ensemble of cobalt nanoparticles at room temperature gives way to a ferromagnetic response with the anisotropy characteristic of a thin magnetic film. The magnetization curves for the superparamagnetic and ferromagnetic ensembles of cobalt nanoparticles are simulated to determine their average sizes and the filling density in the irradiated layer of the silicon dioxide matrix. It is revealed that the spectral dependences of the Faraday and Kerr effects for ion-synthesized cobalt nanoparticles differ substantially from those for continuous cobalt films due to the localized excitations of free electrons in the nanoparticles.

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Держатели документа:
[Edelman, I. S.
Seredkin, V. A.
Zabluda, V. N.
Ivantsov, R. D.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Vorotynova, O. V.] Siberian Fed Univ, Inst Urban Construct Management & Reg Econ, Krasnoyarsk 660041, Russia
[Gatiyatova, Yu. I.
Valeev, V. F.
Khaibullin, R. I.
Stepanov, A. L.] Russian Acad Sci, Zavoisky Phys Tech Inst, Kazan 420029, Russia
[Stepanov, A. L.] Laser Zentrum Hannover, D-30419 Hannover, Germany
ИФ СО РАН
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk 660036, Russian Federation
Institute of Urban Construction, Management, and Regional Economics, Siberian Federal University, Svobodnyi pr. 79, Krasnoyarsk 660041, Russian Federation
Zavoisky Physical-Technical Institute, Russian Academy of Sciences, Sibirskii trakt 10/7, Kazan 420029, Russian Federation
Laser Zentrum Hannover, Hollerithallee 8, Hannover D-30419, Germany

Доп.точки доступа:
Edelman, I. S.; Эдельман, Ирина Самсоновна; Vorotynova, O. V.; Seredkin, V. A.; Середкин, Виталий Александрович; Zabluda, V. N.; Заблуда, Владимир Николаевич; Ivantsov, R. D.; Иванцов, Руслан Дмитриевич; Gatiyatova, Y. I.; Valeev, V. F.; Khaibullin, R. I.; Stepanov, A. L.
}
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20.

One-dimensional photonic crystals with a planar oriented nematic layer: Temperature and angular dependence of the spectra of defect modes / V. G. Arkhipkin [et al.] // J. Exp. Theor. Phys. - 2008. - Vol. 106, Is. 2. - P. 388-398, DOI 10.1134/S1063776108020179. - Cited References: 58 . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
LIQUID-CRYSTAL
   TRANSMISSION SPECTRUM
   BANDGAP STRUCTURES
   PERIODIC STRUCTURE
   REFRACTIVE-INDEX
   LATTICE-DEFECTS
   LASER
   ENHANCEMENT
   SILICON
   MICROCAVITIES
Аннотация: Transmission spectra of a one-dimensional photonic crystal (PC) formed by two multilayer dielectric mirrors and a planar oriented layer of 5CB nematic liquid crystal (LC) that is sandwiched between these mirrors and serves as a structure defect are investigated experimentally. Specific features of the behavior of the spectrum of defect modes as a function of the angle of incidence of light on the crystal are studied for two polarizations: parallel and perpendicular to the director of the LC; the director either lies in the plane of incidence or is perpendicular to it. It is shown that, for the configurations considered, the maxima of the defect modes shift toward the short-wavelength region as the tilt angle of incidence radiation increases; this tendency is more manifest for the parallel-polarized component, when the director lies in the plane of incidence. In the latter case, the width of the photonic band gap (PBG) appreciably decreases. The temperature dependence of the polarization components of the transmission spectra of a PC is investigated in the case of normal incidence of light. The spectral shift of defect modes due to the variation of the refractive index of the LC at the nematic-isotropic liquid phase transition point is measured. It is shown that, in real PCs, the amplitude of defect modes decreases when approaching the center of the band gap, as well as when the number of layers in the dielectric mirrors increases. Theoretical transmission spectra of the PCs calculated by the method of recurrence relations with regard to the decay of defect modes are in good agreement with experimental data.

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Держатели документа:
[Arkhipkin, V. G.
Gunyakov, V. A.
Myslivets, S. A.
Gerasimov, V. P.
Zyryanov, V. Ya.
Vetrov, S. Ya.
Shabanov, V. F.] Russian Acad Sci, Siberian Branch, Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Arkhipkin, V. G.; Архипкин, Василий Григорьевич; Gunyakov, V. A.; Гуняков, Владимир Алексеевич; Myslivets, S. A.; Мысливец, Сергей Александрович; Gerasimov, V. P.; Герасимов, Виктор Петрович; Zyryanov, V. Y.; Зырянов, Виктор Яковлевич; Vetrov, S. Y.; Shabanov, V. F.; Шабанов, Василий Филиппович
}
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