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 Найдено в других БД:Каталог книг и брошюр библиотеки ИФ СО РАН (7)Каталог журналов библиотеки ИФ СО РАН (1)
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1.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Киренский, Леонид Васильевич, Патюкова З. М.
Заглавие : Исследование упругого гистерезиса, термоупругого эффекта в никеле и никель-кремнистых сплавах
Коллективы : Симпозиум по вопросам ферро- и антиферромагнетизма (1962 ; 25 июня - 7 июля; Красноярск)
Место публикации : Изв. АН СССР, Сер. физич./ предс. орг. ком. С. В. Вонсовский. - 1964. - Т. 28, № 1. - С. 198-201
Примечания : Библиогр.: 8 назв. - Phys. Abstr. - 1966. - Vol. 69, 5593
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2.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Vetrov S. Y., Shabanov V. F.
Заглавие : Dissipative effects of the interaction of crystal-lattice surface with medium
Разночтения заглавия :авие SCOPUS: DISSIPATIVE EFFECTS OF THE INTERACTION OF CRYSTAL LATTICE SURFACE WITH MEDIUM
Место публикации : Phys. Status Solidi B. - 1987. - Vol. 140, Is. 1. - P.103-112. - ISSN 0370-1972
Примечания : Cited References: 14
Ключевые слова (''Своб.индексиров.''): electric conductivity - measurements--interferometry--silicon compounds - thin films--x-rays - diffraction--dissipative effects--multiple-reflection interferometry--silver and alloys
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3.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Savchenko M. K., Turpanov I. A., Efimov V. I.
Заглавие : High-temperature magnetic afteraction in iron and iron-silicon alloys
Место публикации : Izvestiya Akademii nauk SSSR Seriya Fizicheskaya. - 1989. - Vol. 53, Is. 4. - P.630-635. - ISSN 0367-6765
Примечания : Cited References: 10
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4.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Peng J. L., Bulcock S., Belobrov P. I., Bursill L. A.
Заглавие : Surface bonding states of nano-crystalline diamond balls
Место публикации : Int. J. Mod. Phys. B: WORLD SCIENTIFIC PUBL CO PTE LTD, 2001. - Vol. 15, Is. 31. - P4071-4085. - ISSN 0217-9792, DOI 10.1142/S0217979201007865
Примечания : Cited References: 20
Предметные рубрики: PLASMON RESPONSE
POWDER
SPECTROSCOPY
MICROSCOPY
SILICON
SI(111)
Ключевые слова (''Своб.индексиров.''): diamond--article--crystal structure--electron--energy transfer--nanoparticle--particulate matter--structure analysis--surface property--transmission electron microscopy
Аннотация: The rough surface of nano-crystalline diamond spheres induces surface electronic states which appear as a broadened pre-peak over approx. 15 eV at the C K-edge energy threshold for carbon in the parallel electron energy loss spectrum (PEELS). This appears to be at least partially due to 1s-pi* transitions, although typically the latter occupy a range of only 4 eV for the sp(2) edge of highly-oriented pyrollytic graphite (HOPG). No pi* electrons appear in the conduction band inside the diamond particles, where all electrons are sp(3) hybridized. PEELS data were also obtained from a chemical vapour deposited diamond film (CVDF) and gem-quality diamond for comparison with the spectra of nano-diamonds. The density of sp(2) and sp(3) states on the surface of diamond nano-crystals is calculated for simple structural models of the diamond balls, including some conjecture about surface structures. The results are used to interpret the sp(2)/sp(3) ratios measured from the PEELS spectra recorded as scans across the particles. Surface roughness at the atomic scale was also examined using high-resolution transmission electron microscopy (HRTEM) and electron nano-diffraction patterns were used to confirm the crystal structures.
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5.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Patrin G. S., Vas'kovskii V. O., Velikanov D. A., Svalov A. V., Panova M. A.
Заглавие : Spin-glass-like behavior of low field magnetisation in multilayer (Gd/Si/Co/Si)(n) films
Разночтения заглавия :авие SCOPUS: Spin-glass-like behavior of low field magnetisation in multilayer (Gd/Si/Co/Si)n films
Место публикации : Phys. Lett. A. - 2003. - Vol. 309, Is. 1-2. - P.155-159. - ISSN 0375-9601, DOI 10.1016/S0375-9601(03)00169-5
Примечания : Cited References: 13
Предметные рубрики: BIQUADRATIC EXCHANGE
Ключевые слова (''Своб.индексиров.''): cobalt--gadolinium--glass--silicon--silicon derivative--acceleration--article--film--magnetic field--magnetism--molecular dynamics--molecular interaction
Аннотация: The results of experimental investigations of magnetic properties of multilayer (Gd/Si/Co/Si)(n) films in low magnetic fields are represented. The spin-glass-like behavior of magnetization is found. The role of biquadratic exchange coupling in a forming of magnetic state of system is discussed. (C) 2003 Elsevier Science B.V. All rights reserved.
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6.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Iskhakov R. S., Komogortsev S. V., Chekanova L. A., Balaev A. D., Yuzova V. A., Semenova O. V.
Заглавие : The magnetic structure of ferromagnetic filaments of a CoNi(P) alloy in a porous silicon matrix
Место публикации : Tech. Phys. Lett.: AMER INST PHYSICS, 2003. - Vol. 29, Is. 4. - P263-266. - ISSN 1063-7850, DOI 10.1134/1.1573285
Примечания : Cited References: 12
Предметные рубрики: RANDOM ANISOTROPY
NI NANOWIRES
NANOCRYSTALLINE
FILMS
CO
FE
Аннотация: The magnetic and resonance properties of CoNi(P) alloys, synthesized by chemical deposition as films on single crystal silicon substrates and as filaments in linear pores of porous silicon substrates, were studied by magnetization and ferromagnetic resonance measurements. It is established that CoNi(P) alloys of the same composition but different morphologies occur in states characterized by different degrees of nonequilibrium, which is manifested by different modes of the magnetization approach to saturation. (C) 2003 MAIK "Nauka / Interperiodica".
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7.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Avramov P. V., Sorokin P. B., Fedorov A. S., Fedorov D. G., Maeda Y.
Заглавие : Band-gap unification of partially Si-substituted single-wall carbon nanotubes
Место публикации : Phys. Rev. B: AMER PHYSICAL SOC, 2006. - Vol. 74, Is. 24. - Ст.245417. - ISSN 1098-0121, DOI 10.1103/PhysRevB.74.245417
Примечания : Cited References: 72
Предметные рубрики: SILICON-CARBIDE NANOTUBES
DENSITY-FUNCTIONAL THEORY
TOTAL-ENERGY CALCULATIONS
WAVE BASIS-SET
ELECTRONIC-STRUCTURE
AB-INITIO
NANORODS
EXCITATIONS
TRANSITION
NANOWIRES
Аннотация: The atomic and electronic structure of a set of pristine single wall SiC nanotubes as well as Si-substituted carbon nanotubes and a SiC sheet was studied by the local-density approximation (LDA) plane wave band structure calculations. Consecutive substitution of carbon atoms by Si leads to a gap opening in the energetic spectrum of the metallic (8,8) SWCNT with approximately quadratic dependence of the band gap upon the Si concentration. The same substitution for the semiconductor (10,0) single wall carbon nanotubes (SWCNT) results in a band gap minimum (0.27 eV) at similar to 25% of Si concentration. In the Si concentration region of 12-18 %, both types of nanotubes have less than 0.5 eV direct band gaps at the Gamma-Gamma point. The calculation of the chiral (8,2) SWSi0.15C0.85NT system gives a similar (0.6 eV) direct band gap. The regular distribution of Si atoms in the atomic lattice is by similar to 0.1 eV/atom energetically preferable in comparison with a random distribution. Time dependent density functional theory (DFT) calculations showed that the silicon substitution sufficiently increases (roughly by one order of magnitude) the total probability of optical transitions in the near infrared region, which is caused by the opening of the direct band gap in metallic SWCNTs, the unification of the nature and energy of the band gaps of all SWCNT species, the large values of Si3p parallel to r parallel to Si3s radial integrals and participation of Si3d states in chemical bonding in both valence and conductance bands.
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8.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Chernozatonskii L. A., Sorokin P. B., Fedorov A. S.
Заглавие : Energy and electronic properties of non-carbon nanotubes based on silicon dioxide
Место публикации : Phys. Solid State: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2006. - Vol. 48, Is. 10. - P2021-2027. - ISSN 1063-7834, DOI 10.1134/S1063783406100337
Примечания : Cited References: 32
Предметные рубрики: MOLECULAR-DYNAMICS
SIO2
Аннотация: The geometric, energy, and electronic characteristics of new non-carbon nanotubes based on silicon dioxide are investigated in the framework of the local electron density functional formalism. Nanotubes are classified according to the type of rolling-up of the SiO2 sheet. It is shown that, among the entire set of considered nanotubes with different symmetries, the (6, 0) nanotubes are energetically more favorable. The densities of states for nanotubes are calculated. It is established that all nanotubes are dielectrics with a wide band gap. The band gap varies over a wide range with a change in the longitudinal strain of the nanotube.
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9.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bulina N. V., Lopatin V. A., Vnukova N. G., Osipova I. V., Churilov G. N., Krtschmer W.
Заглавие : Arc synthesis of silicon-doped heterofullerenes in plasma at atmospheric pressure
Место публикации : Fullerenes Nanotubes and Carbon Nanostructures: Marcel Dekker Inc., 2007. - Т. 15, № 5. - С. 395-400. - ISSN 1536-383X, DOI 10.1080/15363830701512229. - ISSN 1536-4046(eissn)
ГРНТИ : 31
РИНЦ
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Avramov P. V., Sorokin P. B. , Chernozatonskii L. A. , Gordon M. S.
Заглавие : Multiterminal nanowire junctions of silicon: A theoretical prediction of atomic structure and electronic properties
Место публикации : Nano Letters: American Chemical Society, 2007. - Т. 7, № 7. - С. 2063-2067. - ISSN 1530-6984, DOI 10.1021/nl070973y. - ISSN 1530-6992(eissn)
ГРНТИ : 34
РИНЦ
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11.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Avramov P. V., Kuzubov A. A., Fedorov A. S., Sorokin P. B., Tomilin F. N., Maeda Y.
Заглавие : Density-functional theory study of the electronic structure of thin Si/SiO2 quantum nanodots and nanowires
Место публикации : Phys. Rev. B: AMERICAN PHYSICAL SOC, 2007. - Vol. 75, Is. 20. - Ст.205427. - ISSN 1098-0121, DOI 10.1103/PhysRevB.75.205427
Примечания : Cited References: 63
Предметные рубрики: ERBIUM ION LUMINESCENCE
TOTAL-ENERGY CALCULATIONS
WAVE BASIS-SET
POROUS SILICON
OPTICAL-PROPERTIES
OXIDIZED SI
SEMICONDUCTOR NANOWIRES
PHASE-TRANSFORMATIONS
NANOCRYSTALS
CONFINEMENT
Аннотация: The atomic and electronic structures of a set of proposed pentagonal thin (1.6 nm in diameter) silicon/silica quantum nanodots (QDs) and nanowires (NWs) with narrow interface, as well as parent metastable silicon structures (1.2 nm in diameter), were studied using cluster B3LYP/6-31G(*) and periodic boundary condition (PBC) plane-wave (PW) pseudopotential (PP) local-density approximation methods. The total density of states (TDOS) of the smallest quasispherical QD (Si-85) corresponds well to the PBC PW PP LDA TDOS of the crystalline silicon. The elongated SiQDs and SiNWs demonstrate the metallic nature of the electronic structure. The surface oxidized layer opens the band gap in the TDOS of the Si/SiO2 species. The top of the valence band and the bottom of conduction band of the particles are formed by the silicon core derived states. The theoretical band gap width is determined by the length of the Si/SiO2 clusters and describes the size confinement effect in the experimental photoluminescence spectra of the silica embedded nanocrystalline silicon with high accuracy.
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12.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Avramov P.V., Fedorov D.G., Sorokin P. B., Chernozatonskii L.A., Gordon M.S.
Заглавие : New symmetric families of silicon quantum dots and their conglomerates as a tunable source of photoluminescence in nanodevices
Место публикации : arXiv: Cornell University, 2008. - Ст.0709.2279v1
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13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Sorokin P. B., Ovchinnikov S. G., Avramov P. V., Chernozatonskii L.A., Fedorov D.G.
Заглавие : Atypical quantum confinement effect in silicon nanowires
Место публикации : J. Phys. Chem. A. - WASHINGTON: AMER CHEMICAL SOC, 2008. - Vol. 112, Is. 40. - С. 9955-9964. - OCT 9. - ISSN 1089-5639, DOI 10.1021/jp805069b
Примечания : Cited Reference Count: 25. - Гранты: This work was in part partially supported by a CREST (Core Research for Evolutional Science and Technology) grant in the Area of High Performance Computing for Multiscale and Multiphysics Phenomena from the Japan Science and Technology Agency (JST) as well as by Russian Fund of Basic Researches (grant 08-02-01096) (L.A.C.). P.V.A. acknowledges the encouragement of Dr. Keiji Morokuma, Research Leader at Fukui Institute for Fundamental Chemistry. The geometry of all presented structures was visualized by ChemCraft software.SUP25/SUP L.A.C. acknowledges I. V. Stankevich for help and fruitful discussions. P.B.S. is grateful to the Joint Supercomputer Center of the Russian Academy of Sciences for access to a cluster computer for quantum-chemical calculations.Финансирующая организация: Japan Science and Technology Agency (JST); Russian Fund of Basic Researches [08-02-01096]
Предметные рубрики: ELECTRONIC-STRUCTURE
OPTICAL-PROPERTIES
SI
DENSITY
WIRES
EXCHANGE
ATOMS
DOTS
Ключевые слова (''Своб.индексиров.''): electric wire--energy gap--gallium alloys--mathematical models--nanostructured materials--nanostructures--nanowires--quantum confinement--quantum electronics--semiconductor quantum dots--silicon--ami methods--band gaps--blue shifts--dinger equations--linear junctions--monotonic decreases--quantum confinement effects--quantum dots--semiempirical--silicon nanowires--system sizes--theoretical models--nanocrystalline silicon--nanowire--quantum dot--silicon--article--chemistry--electron--quantum theory--electrons--nanowires--quantum dots--quantum theory--silicon
Аннотация: The quantum confinement effect (QCE) of linear junctions of silicon icosahedral quantum dots (IQD) and pentagonal nanowires (PNW) was studied using DFT and semiempirical AM1 methods. The formation of complex IQD/PNW structures leads to the localization of the HOMO and LUMO on different parts of the system and to a pronounced blue shift of the band gap; the typical QCE with a monotonic decrease of the band gap upon the system size breaks down. A simple one-electron one-dimensional Schrodinger equation model is proposed for the description and explanation of the unconventional quantum confinement behavior of silicon IQD/PNW systems. On the basis of the theoretical models, the experimentally discovered deviations from the typical QCE for nanocrystalline silicon are explained.
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14.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Arkhipkin V. G., Gunyakov V. A., Myslivets S. A., Zyryanov V. Ya., Shabanov V. F.
Заглавие : Defect modes in real photonic crystals
Коллективы : International Conference on Advanced Optoelectronics and Lasers
Место публикации : Proceedings of CAOL 2008: 4th International Conference on Advanced Optoelectronics and Lasers. - 2008. - 4th International Conference on Advanced Optoelectronics and Lasers, CAOL 2008 (29 September 2008 through 4 October 2008, Alushta, Crimea, ) Conference code: 74830. - С. 183-185. - ISBN 9781424419746 (ISBN), DOI 10.1109/CAOL.2008.4671857
Ключевые слова (''Своб.индексиров.''): detect mode--liquid crystal--photonic band gap--photonic crystal--defect modes--detect mode--number of layers--photonic crystal structures--crystal atomic structure--crystal structure--defects--energy gap--gallium alloys--light sources--liquid crystals--liquid lasers--optical devices--photonic band gap--silicon on insulator technology--photonic crystals
Аннотация: It is demonstrated experimentally that amplitudes of defect modes of one-dimensional photonic crystal have maximal value near edges of the photonic band gap while at the centre of the stop-band they are reduced, moreover than more number of layers in photonic crystal, the less the amplitude of defect mode at the center of the PBG. We explain such behavior of defect modes presence of losses at propagation of light in real photonic crystal structures. © 2008 IEEE.
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15.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Avramov P.V., Sorokin P.B., Fedorov D.G., Chernozatonskii L.A., Narumi K., Ovchinnikov S.G., Morokuma K.
Заглавие : Quantum dots embedded into silicon nanowires effectively partition electron confinement
Место публикации : J. Appl. Physics. - 2008. - Vol. 104. - С. 054305(6)
РИНЦ
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16.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Sorokin B. P., Marushyak A. N., Aleksandrov K. S.
Заглавие : Influence of heterogeneous external fields on propagation of bulk acoustic waves in crystals
Коллективы : IEEE International ultrasonics symposium
Место публикации : Proceedings - IEEE Ultrasonics Symposium. - 2008. - Ст.4803313. - P.1472-1475. - ISBN 1051-0117, DOI 10.1109/ULTSYM.2008.0358
Ключевые слова (''Своб.индексиров.''): bulk elastic wave--non-homogeneous mechanical loading--phase velocity--wave surface--bulk acoustic waves--bulk elastic wave--bulk waves--external fields--non-homogeneous--non-homogeneous mechanical loading--numerical calculation--small amplitude--wave surface--acoustic fields--crystals--elastic waves--elasticity--phase velocity--silicon compounds--soil structure interactions--waves--velocity
Аннотация: Formulas describing the influence of nonhomogeneous pressure on propagation of bulk waves in crystals have derived. Phase velocity for small amplitude waves in Bi12SiO20 crystal the action of non-homogeneous pressure has been . Under those conditions the behavior of the wave has researched. Numerical calculation of phase velocity of and their directions propagation changing have obtained. В©2008 IEEE.
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17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Avramov P. V., Fedorov D. G., Sorokin P. B., Chernozatonskii L. A., Ovchinnikov S. G.
Заглавие : Quantum dots embedded into silicon nanowires effectively partition electron confinement
Коллективы :
Место публикации : J. Appl. Phys.: AMER INST PHYSICS, 2008. - Vol. 104, Is. 5. - Ст.54305. - ISSN 0021-8979, DOI 10.1063/1.2973464
Примечания : Cited References: 22. - This work was, in part, partially supported by a Core Research for Evolutional Science and Technology (CREST) grant in the area of high performance computing for multi-scale and multiphysics phenomena from the Japan Science and Technology Agency (JST) as well as by the Russian Fund of Basic Researches (Grant No. 05-02-17443) (L.A.C.). One of the authors (P.V.A.) acknowledges the encouragement of Dr. Keiji Morokuma, Research Leader at Fukui Institute. The geometry of all presented structures was visualized by ChemCraft software. SUP23/SUP L.A.C. acknowledges I. V. Stankevich for help and fruitful discussions. P.B.S. is grateful to the Joint Supercomputer Center of the Russian Academy of Sciences for access to a cluster computer for quantum-chemical calculations.
Предметные рубрики: OPTICAL-PROPERTIES
POROUS SILICON
WIRES
PREDICTION
GROWTH
Ключевые слова (''Своб.индексиров.''): electric currents--electric wire--electronic states--electronic structure--nanostructured materials--nanostructures--nanowires--nonmetals--optical waveguides--plasma confinement--quantum confinement--quantum electronics--semiconducting silicon compounds--silicon--electronic state--band gaps--electron confinements--electronic-structure calculations--embedded structures--quantum confinement effect--quantum dots--semi-empirical methods--silicon nanowires--silicon quantum dots--semiconductor quantum dots
Аннотация: Motivated by the experimental discovery of branched silicon nanowires, we performed theoretical electronic structure calculations of icosahedral silicon quantum dots embedded into pentagonal silicon nanowires. Using the semiempirical method, we studied the quantum confinement effect in the fully optimized embedded structures. It was found that (a) the band gaps of the embedded structures are closely related to the linear sizes of the longest constituting part rather than to the total linear dimension and (b) the discovered atypical quantum confinement with a plateau and a maximum can be attributed to the substantial interactions of near Fermi level electronic states of the quantum dots and nanowire segments. (c) 2008 American Institute of Physics.
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18.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Sorokin P. B., Avramov P. V., Kvashnin A. G., Kvashnin D. G., Ovchinnikov S. G., Fedorov A. S.
Заглавие : Density functional study of 110 -oriented thin silicon nanowires
Разночтения заглавия :авие SCOPUS: Density functional study of 110 -oriented thin silicon nanowires
Место публикации : Phys. Rev. B: AMER PHYSICAL SOC, 2008. - Vol. 77, Is. 23. - Ст.235417. - ISSN 1098-0121, DOI 10.1103/PhysRevB.77.235417
Примечания : Cited References: 38
Предметные рубрики: ELECTRONIC-PROPERTIES
MOLECULAR-DYNAMICS
BUILDING-BLOCKS
QUANTUM WIRES
GROWTH
Аннотация: The electronic band structure and energetic stability of two types of 110 oriented silicon nanowires terminated by hydrogen atoms are studied using the density functional theory. The nanowires truncated from the bulk silicon with [100] and [111] facets and the pentagonal star-shaped nanowires with [111] facets have the lowest cohesive energies, whereas the hexagonal star-shaped ones are the highest in energy. The star-shaped nanowires have the lowest band gaps with direct and indirect transitions for pentagonal and hexagonal types, respectively. Based on the theoretical results, an interpretation of existing experimental data has been provided.
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19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Edelman I. S., Vorotynova O. V., Seredkin V. A., Zabluda V. N., Ivantsov R. D., Gatiyatova Y. I., Valeev V. F., Khaibullin R. I., Stepanov A. L.
Заглавие : Magnetic and magneto-optical properties of ion-synthesized cobalt nanoparticles in silicon oxide
Коллективы :
Место публикации : Phys. Solid State: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2008. - Vol. 50, Is. 11. - P2088-2094. - ISSN 1063-7834, DOI 10.1134/S1063783408110140
Примечания : Cited References: 15. - We would like to thank the Alexander von Humboldt Foundation (Germany) for the financial support of A. L. Stepanov in Germany.This study was supported by the Russian Foundation for Basic Research (project nos. 04-02-97505- r_ofi, 06-02-08147_ofi, 07-02-92174- CNRS) and the Branch of General Physics and Astronomy of the Russian Academy of Sciences (Program "New Materials and Structures"). R. D. Ivantsov acknowledges the support of the Russian Science Support Foundation.
Предметные рубрики: NANOCLUSTERS
Ключевые слова (''Своб.индексиров.''): 75--60--ej--78--20--ls--61--46--df
Аннотация: The magnetic and magneto-optical properties of ion-synthesized cobalt nanoparticles in the amorphous silicon oxide matrix are investigated as a function of the implantation dose. The analysis of the field dependences of the magnetization and the magneto-optical Faraday and Kerr effects demonstrates that, as the ion implantation dose increases, the superparamagnetic behavior of an ensemble of cobalt nanoparticles at room temperature gives way to a ferromagnetic response with the anisotropy characteristic of a thin magnetic film. The magnetization curves for the superparamagnetic and ferromagnetic ensembles of cobalt nanoparticles are simulated to determine their average sizes and the filling density in the irradiated layer of the silicon dioxide matrix. It is revealed that the spectral dependences of the Faraday and Kerr effects for ion-synthesized cobalt nanoparticles differ substantially from those for continuous cobalt films due to the localized excitations of free electrons in the nanoparticles.
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20.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Arkhipkin V. G., Gunyakov V. A., Myslivets S. A., Gerasimov V. P., Zyryanov V. Y., Vetrov S. Y., Shabanov V. F.
Заглавие : One-dimensional photonic crystals with a planar oriented nematic layer: Temperature and angular dependence of the spectra of defect modes
Место публикации : J. Exp. Theor. Phys.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2008. - Vol. 106, Is. 2. - P388-398. - ISSN 1063-7761, DOI 10.1134/S1063776108020179
Примечания : Cited References: 58
Предметные рубрики: LIQUID-CRYSTAL
TRANSMISSION SPECTRUM
BANDGAP STRUCTURES
PERIODIC STRUCTURE
REFRACTIVE-INDEX
LATTICE-DEFECTS
LASER
ENHANCEMENT
SILICON
MICROCAVITIES
Аннотация: Transmission spectra of a one-dimensional photonic crystal (PC) formed by two multilayer dielectric mirrors and a planar oriented layer of 5CB nematic liquid crystal (LC) that is sandwiched between these mirrors and serves as a structure defect are investigated experimentally. Specific features of the behavior of the spectrum of defect modes as a function of the angle of incidence of light on the crystal are studied for two polarizations: parallel and perpendicular to the director of the LC; the director either lies in the plane of incidence or is perpendicular to it. It is shown that, for the configurations considered, the maxima of the defect modes shift toward the short-wavelength region as the tilt angle of incidence radiation increases; this tendency is more manifest for the parallel-polarized component, when the director lies in the plane of incidence. In the latter case, the width of the photonic band gap (PBG) appreciably decreases. The temperature dependence of the polarization components of the transmission spectra of a PC is investigated in the case of normal incidence of light. The spectral shift of defect modes due to the variation of the refractive index of the LC at the nematic-isotropic liquid phase transition point is measured. It is shown that, in real PCs, the amplitude of defect modes decreases when approaching the center of the band gap, as well as when the number of layers in the dielectric mirrors increases. Theoretical transmission spectra of the PCs calculated by the method of recurrence relations with regard to the decay of defect modes are in good agreement with experimental data.
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