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    Fabrication and DC/AC characterization of 3-terminal ferromagnet/silicon spintronics devices / A. S. Tarasov [et al.] // Semiconductors. - 2018. - Vol. 52, Is. 14. - P. 1875–1878, DOI 10.1134/S1063782618140312. - Cited References: 10. - The work was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund project no. 18-42-243022. This work is partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (project II.8.70) and Fundamental research program of the Presidium of the RAS no. 32 “Nanostructures: physics, chemistry, biology, basics of technologies”. . - ISSN 1063-7826. - ISSN 1090-6479
   Перевод заглавия: Изготовление и транспортные свойства 3-х терминальных спинтронных устройств ферромагнетик/полупроводник
Аннотация: CMOS and SOI technology compatible structures and devices are currently intensively investigated by many research groups, since various effects observed in such structures can be relatively easy implemented in electronic devices thereby expanding their functionality. The most promising is the research and development of spintronic devices, which will allow using both electron charge and spin degrees of freedom for transmission, storage and processing of information. In this work we report the fabrication process of 3-terminal (3-T) ferromagnet/silicon devices of two types. First is the planar Fe3Si/Si 3-T structure with 5 μm gap between closest ferromagnetic electrodes. Second is silicon nanowire back-gate transistor with Fe film source and drain synthesized on SOI substrate. Transport and magnetotransport properties of both devices are investigated.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, Russia

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Bondarev, I. A.; Бондарев, Илья Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Baron, F. A.; Барон, Филипп Алексеевич; Smolyarova, T. E.; Смолярова, Татьяна Евгеньевна; Yakovlev, I. A.; Яковлев, Иван Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Volkov, N. V.; Волков, Никита Валентинович
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Influence of metal magnetic state and metal-insulator-semiconductor structure composition on magnetoimpedance effect caused by interface states / D. A. Smolyakov [et al.] // Thin Solid Films. - 2019. - Vol. 671. - P. 18-21, DOI 10.1016/j.tsf.2018.12.026. - Cited References: 15. - This study was supported by the Russian Foundation for Basic Research , project no. 18-32-00035 and supported in part by the Russian Foundation for Basic Research , Government of the Krasnoyarsk Territory, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities, project no. 18-42-243022, and the Ministry of Education and Science of the Russian Federation and the Siberian Branch of the Russian Academy of Sciences , project II.8.70, and the Presidium of the Russian Academy of Sciences , Fundamental Research Program no. 32 «Nanostructures: Physics, Chemistry, Biology, Basics of Technologies». . - ISSN 0040-6090
Кл.слова (ненормированные):
Magnetoimpedance -- Spintronics -- Metal/insulator/semiconductor structures -- Nanosized semiconductors
Аннотация: This article presents the results of a study of the transport properties of metal/insulator/semiconductor (MIS) hybrid structures in alternating current (ac) mode. We prepared a series of samples with different layers of metal, insulator, and semiconductor. We prepared a series of samples with different layers of metal, insulator and semiconductor. Ferromagnetic Fe and non-magnetic Cu and Mn were chosen as metals, the insulators were SiO2 and Al2O3, and n- and p-type Si substrates were used as semiconductors. Temperature dependence of the real part of the impedance showed peculiar peaks below 40К for different combinations of metals, insulators and semiconductors. For all samples the effect of the magnetic field on the transport properties was studied. At low temperatures, the magnetic field shifts peaks toward higher temperatures. Metal magnetic state does not significantly affect this phenomenon. Changing the type of the insulator and its thickness also did not cause any significant effect. However, the effect was observed for samples with different composition. Moreover, the type of conductivity of the substrate, as well as the type of metal, determines the value of magnetoimpedance. The main role in the magnetoimpedance effect is played by recharge of the energy states localized at the insulator/semiconductor interface. This mechanism allows obtaining a MI effect even in “nonmagnetic” MIS structures; magnetoimpedance can be either positive or negative, depending on temperature and frequency. We suggest that the observed ac magnetotransport phenomena could be used for creating magnetic field sensors, working on new principles.

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Держатели документа:
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Siberian State University of Science and Technology, Krasnoyarsk, 660014, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Masyugin, A. N.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Bondarev, I. A.; Бондарев, Илья Александрович; Kosyrev, N. N.; Косырев, Николай Николаевич; Volkov, N. V.; Волков, Никита Валентинович
}
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Dip-Pen Nanolithography method for fabrication of biofunctionalized magnetic nanodiscs applied in medicine / T. E. Smolyarova [et al.] // Semiconductors. - 2018. - Vol. 52: 25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia), Is. 5. - P. 675-677, DOI 10.1134/S1063782618050305. - Cited References:22. - The study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project nos. 17-42-240080, 16-42-243046, 16-42-242036 and the Grant of the President of the Russian Federation no. NSh-7559.2016.2. . - ISSN 1063-7826. - ISSN 1090-6479

РУБ Physics, Condensed Matter
Рубрики:
DRUG-DELIVERY
   FORCE MICROSCOPY
   NANOPARTICLES
   HYPERTHERMIA
   THERAPY
Аннотация: The magnetic properties of ferromagnetic nanodiscs coated with gold, manufactured using the Dip-Pen Nanolithography method, and were studied by atomic-force and magnetic force microscopy methods. The magnetic discs (dots) are represented as nanoagents (nanorobots) applied in medicine for the cancer cell destruction. The motivation of this work stem from the necessity of the understanding of the magnetization distribution in ferromagnetic discs that is crucial for their application in biomedicine. We have performed the theoretical calculations in order to compare the theoretical image contrast to experimental results. Herein, we report about the fabrication and analysis of biocompatible ferromagnetic nanodiscs with the homogenous magnetized state.

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Публикация на "русском языке" Dip-Pen Nanolithography method for fabrication of biofunctionalized magnetic nanodiscs applied in medicine [Текст] / T. E. Smolyarova [et al.] // Физ. и техника полупроводников. - 2018. - Т. 52 : 25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia) Вып. 5.- с.528

Держатели документа:
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Smolyarova, T. E.; Смолярова, Татьяна Евгеньевна; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Tarasov, A. S.; Тарасов, Антон Сергеевич; Sokolov, A. Е.; Соколов, Алексей Эдуардович; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [17-42-240080, 16-42-243046, 16-42-242036]; Russian Federation [NSh-7559.2016.2]; International Symposium on Nanostructures - Physics and Technology(25th ; Jun 26-30, 2017 ; Saint Petersburg, Russia)
}
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Lukyanenko, A. V.
Alternative technology for creating nanostructures using Dip Pen Nanolithography / A. V. Lukyanenko, T. E. Smolyarova // Semiconductors. - 2018. - Vol. 52: 25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia), Is. 5. - P. 636-638, DOI 10.1134/S1063782618050202. - Cited References:9. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project nos. 16-42-243046, 16-42-242036 and 16-42-243060. . - ISSN 1063-7826. - ISSN 1090-6479

РУБ Physics, Condensed Matter

Аннотация: For modern microelectronics, at the present time, the technologies of consciousness smart structures play an important role, which can provide accuracy, stability and high quality of the structures. Submicron lithography methods are quite expensive and have natural size limitations, not allowing the production of structures with an extremely small lateral limitation. Therefore, an intensive search was conducted for alternative methods for creating submicron resolution structures. Especially attractive one is the possibility of self-organization effects utilization, where the nanostructure of a certain size is formed under the influence of internal forces. The dip pen nanolithography method based on a scanning probe microscope uses a directwrite technology and allows one to carry out a playback of small size structures with high accuracy. In the experiment, a substrate coated with Au (15 nm) using a DPN technique is applied to the polymer to form a desired pattern nano-sized channel. The experiment was conducted using a pointed probe SiN, coated MHA-Acetonitrile, on the Si(111)/Fe3Si/Au structure.

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Публикация на "русском языке" Lukyanenko A. V. Alternative technology for creating nanostructures using Dip Pen Nanolithography [Текст] / A. V. Lukyanenko, T. E. Smolyarova // Физ. и техника полупроводников. - 2018. - Т. 52 : 25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia) Вып. 5.- с.519

Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Smolyarova, T. E.; Смолярова, Татьяна Евгеньевна; Лукьяненко, Анна Витальевна; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-243046, 16-42-242036, 16-42-243060]; International Symposium on Nanostructures - Physics and Technology(25th ; Jun 26-30, 2017 ; Saint Petersburg, Russia)
}
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Effect of epitaxial alignment on electron transport from quasi-two-dimensional iron silicide α-FeSi2 nanocrystals into p-Si(001) / I. A. Tarasov [et al.] // Semiconductors. - 2018. - Vol. 52: 25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia), Is. 5. - P. 654-659, DOI 10.1134/S1063782618050330. - Cited References:31. - The work was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects no. 16-42-243060 and 16-42-243035 and Russian Foundation for Basic Research, Government of the Republic of Khakassia, research project no. 17-42-190308. We also thank L.A. Solovyov for his assistance in XRD analysis. . - ISSN 1063-7826. - ISSN 1090-6479

РУБ Physics, Condensed Matter
Рубрики:
BETA-FESI2 THIN-FILMS
   LOW-TEMPERATURE
   GROWTH
   FESI2
   SI(100)
   SI(111)
Аннотация: Self-assembled growth of α-FeSi2 nanocrystal ensembles on gold-activated and gold-free Si(001) surface by molecular beam epitaxy is reported. The microstructure and basic orientation relationship (OR) between the silicide nanocrystals and silicon substrate were analysed. The study reveals that utilisation of the gold as catalyst regulates the preferable OR of the nanocrystals with silicon and their habitus. It is shown that electron transport from α-FeSi2 phase into p-Si(001) can be tuned by the formation of (001)-or (111)-textured α-FeSi2 nanocrystals ensembles. A current-voltage characteristic of the structures with different preferable epitaxial alignment (α-FeSi2(001)/Si(100) and α-FeSi2(111)/Si(100)) shows good linearity at room temperature. However, it becomes non-linear at different temperatures for different ORs due to different Schottky barrier height governed by a particular epitaxial alignment of the α-FeSi2/p-Si interfaces.

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Публикация на "русском языке" Effect of epitaxial alignment on electron transport from quasi-two-dimensional iron silicide α-FeSi2 nanocrystals into p-Si(001) [Текст] / I. A. Tarasov [et al.] // Физ. и техника полупроводников. - 2018. - Т. 52 : 25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia) Вып. 5.- с.523

Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Tarasov, I. A.; Тарасов, Иван Анатольевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-243060, 16-42-243035]; Russian Foundation for Basic Research, Government of the Republic of Khakassia [17-42-190308]; International Symposium on Nanostructures - Physics and Technology(25th ; Jun 26-30, 2017 ; Saint Petersburg, Russia)
}
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    Engineering of K3YSi2O7 to Tune Photoluminescence with Selected Activators and Site Occupancy / J. Qiao [et al.] // Chem. Mater. - 2019. - Vol. 31, Is. 18. - P. 7770-7778, DOI 10.1021/acs.chemmater.9b02990. - Cited References: 48. - This work was supported by the National Natural Science Foundation of China (Nos. 51722202, 51972118 and 51572023), Natural Science Foundations of Beijing (2172036), Fundamental Research Funds for the Central Universities (FRF-TP-18-002C1), and Guangdong Provincial Science & Technology Project (2018A050506004). This work was also supported by the National Science Foundation, Ceramics Program (No. 1911372), and the computational resources were provided by the Extreme Science and Engineering Discovery Environment (XSEDE) supported by the National Science Foundation (No. ACI-1548562). . - ISSN 0897-4756
   Перевод заглавия: Производство K3YSi2O7 для настройки фотолюминесценции с выбранными активаторами и заселением позиций
Кл.слова (ненормированные):
Citrus fruits -- Density functional theory -- Doping (additives) -- Energy gap -- Gallium alloys -- III-V semiconductors -- Indium alloys -- Light -- Light emitting diodes -- Metal ions -- Phosphors -- Photoluminescence -- Rare earths -- Rietveld refinement -- Semiconductor alloys
Аннотация: The luminescence of rare earth ions (Eu2+, Ce3+, and Eu3+)-doped inorganic solids is attractive for the screening of phosphors applied in solid-state lighting and displays and significant to probe the occupied crystallographic sites in the lattice also offering new routes to photoluminescence tuning. Here, we report on the discovery of the Eu- and Ce-activated K3YSi2O7 phosphors. K3YSi2O7:Eu is effectively excited by 450 nm InGaN blue light-emitting diodes (LEDs) and displays an orange-red emission originated from characteristic transitions of both Eu2+ and Eu3+, while K3YSi2O7:Ce3+ shows green emission upon 394 nm near-ultraviolet (NUV) light excitation. Rietveld refinement verifies the successful doping of the activators, and density functional theory (DFT) calculations further support that Eu2+ occupies both K1 and Y2 crystallographic sites, while Ce3+ and Eu3+ only occupy the Y2 site; hence, the broad-band red emission of Eu2+ are attributed to a small DFT band gap (3.69 eV) of K3YSi2O7 host and a selective occupancy of Eu2+ in a highly distorted K1 site and a high crystal field splitting around Y2 sites. The white LEDs device utilizing orange-red-emitting K3YSi2O7:Eu and green-emitting K3YSi2O7:Ce3+ exhibits an excellent CRI of 90.1 at a correlated color temperature of 4523 K. Our work aims at bridging multivalent Eu2+/Eu3+ and Ce3+ site occupancy in the same host to realize photoluminescence tuning and especially exposes new ways to explore new phosphors with multicolor emission pumped by blue and NUV light for white LEDs.

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Держатели документа:
School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, 100083, China
Department of Nanoengineering, University of California, San Diego, 9500 Gilman Drive, San Diego, CA 92093, United States
Laboratory of Crystal Physics, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Department of Physics, Far Eastern State Transport University, Khabarovsk, 680021, Russian Federation
National Synchrotron Radiation Research Center, Hsinchu, 300, Taiwan
State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou, 510641, China

Доп.точки доступа:
Qiao, J.; Amachraa, M.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Chuang, Y. -C.; Ong, S. P.; Zhang, Q.; Xia, Z.
}
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Bikbaev, R. G.
Transparent conductive oxides for the epsilon-near-zero Tamm plasmon polaritons / R. G. Bikbaev, S. Ya Vetrov, I. V. Timofeev // J. Opt. Soc. Am. B. - 2019. - Vol. 36, Is. 10. - P. 2817-2823, DOI 10.1364/JOSAB.36.002817. - Cited References: 44. - The reported study was funded by RFBR according to the research project No 18-32-00053 and financial support RFBR and MOST according to the research project No 19-52-52006. . - ISSN 0740-3224
Кл.слова (ненормированные):
Aluminum oxide -- II-VI semiconductors -- Indium compounds -- Infrared devices -- Optical films -- Phonons -- Photons -- Plasmons -- Q factor measurement -- Tin oxides -- Transfer matrix method -- Transparent conducting oxides -- Zinc oxide
Аннотация: We demonstrate the possibility of using transparent conducting oxides [aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium tin oxide (ITO)] to form Tamm plasmon polaritons in the near-infrared spectral range where the permittivity of oxides is near zero. The spectral properties of the structures are investigated in the framework of the temporal coupled-mode theory and confirmed by the transfer matrix method. It is found that in the critical coupling conditions, the maximal Q-factor of a Tamm plasmon polariton is achieved when a photonic crystal is conjugated with the AZO film, while at the conjugation with the ITO films, the broadest spectral line is obtained. The sensitivity of the wavelength and spectral width of the Tamm plasmon polariton to changes in the oxide film thickness, bulk concentration of a dopant, and angle of incidence is demonstrated.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Vetrov, S. Ya.; Ветров, Степан Яковлевич; Timofeev, I. V.; Тимофеев, Иван Владимирович; Бикбаев, Рашид Гельмединович
}
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Mikhaleva, N. S.
Theoretical investigation of NiI2 based bilayer heterostructures / N. S. Mikhaleva, M. A. Visotin, Z. I. Popov // Key Eng. Mater. - 2019. - Vol. 806 KEM. - P. 10-16, DOI 10.4028/www.scientific.net/KEM.806.10. - Cited References: 38. - N. S. M. acknowledges the financial support of the RFBR project No. 16-32-60003 mol_a_dk.
Кл.слова (ненормированные):
2D semiconductors -- Ab initio calculations -- Heterostructures -- NiI2 -- Transition metal dichalcogenides
Аннотация: The electronic structure of nickel iodide monolayer in NiI2/ScX2 (X = S, Se and Te) and NiI2/NiTe2 heterostructures was investigated by density functional theory (DFT). The spin-asymmetric semiconducting behavior of NiI2 monolayer in these interfaces was observed. The width of the band gap of the NiI2 monolayer practically does not change in heterostructures and remains at the level of 1.7 and 3.0 eV for minor and major spin channels, respectively. The NiI2 layer can be p-doped by stacking with ScX2 dichalcogenides. On the contrary, charge transfer (~0.01 |e| per f.u.) from NiTe2 leads to n-doping of NiI2. As a result, the Fermi level shifts up to the area of NiI2 conduction band with spin down carriers only, which gives prospects of using this material in spin filter applications. The electronic structure of NiI2/ScTe2 under isotropic deformation in the plane remains the same under tension and compression within 5%, except for a small change in the band gap in the composite layers of NiI2 within 25%. This allows one to conclude about the stability of the electronic properties under deformations, which gives possibility to use the heterostructures in flexible electronics devices. © 2019 Trans Tech Publications Ltd, Switzerland

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Держатели документа:
Siberian Federal University, av. Svobodny 79, Krasnoyarsk, 660041, Russian Federation
L.V. Kirensky Institute of Physics, Akademgorodok 50, Krasnoyarsk, 660036, Russian Federation
National University of Science and Technology “MISiS”, Leninsky pr. 4, Moscow, 119049, Russian Federation

Доп.точки доступа:
Visotin, M. A.; Высотин, Максим Александрович; Popov, Z. I.; Попов, Захар Иванович; Asian School-Conference on Physics and Technology of Nanostructured Materials(4 ; 2018 ; Sept. ; 23-28 ; Vladivostok)
}
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Val'kov, V. V.
Renormalization of triplet populations of a spin dimer in zero magnetic field with quantum transport / V. V. Val'kov, S. V. Aksenov // Low Temp. Phys. - 2019. - Vol. 45, Is. 2 : 22nd Ural International Winter School on the Physics of Semiconductors (Feb 20-23, 2018, Alapayevsk, RUSSIA). - P. 165-175, DOI 10.1063/1.5086406. - Cited References: 20. - This work was performed with the support of the Program for Fundamental Research of the Presidium of the Russian Academy of Sciences, No. 32, "Nanostructures: physics, chemistry, biology, foundations of technology", the Russian Fund for Basic Research (grants #16-02-00073, #18-32-00443), the Government of Krasnoyarsk Krai, the Krasnoyarsk Regional Fund for Science within the scientific projects: "Connected Majorana fermions in nanomaterials with strong electron correlations and quantum transport of electrons in systems based on them" (No. 17-42-240441) and "Manifestation of Coulomb interactions and the effects of limited geometry in properties of topological regional states of nanostructures from spin-orbital interaction" (No. 18-42-243017). S.A. expresses his gratitude for a grant of the President of the Russian Federation MK-3722.2018.2. . - ISSN 1063-777X. - ISSN 1090-6517

РУБ Physics, Applied
Рубрики:
SINGLE-MOLECULE
Аннотация: Based on the nonequilibrium Keldysh technique in the atomic representation, the effect of inducing a varied population of magnetic states of a spin dimer interacting with electrons transported through a system in a zero magnetic field was studied. In order to find the filling numbers of the quantum states of the system under the strong nonequilibrium condition, a system of kinetic equations was derived and solved by the method of nonequilibrium diagram technique for Hubbard operators. Numerical analysis of these equations made it possible to reveal nonequilibrium renormalizations when accounting for strong spin-fermion correlations.

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Публикация на русском языке Вальков, Валерий Владимирович. Ренормировки заселенностей триплетных состояний спинового димера в нулевом магнитном поле при квантовом транспорте [Текст] / В. В. Вальков, С. В. Аксенов // Физ. низких температур / чл. прогр. ком. В. В. Вальков. - 2019. - Т. 45 Вып. 2. - С. 192-203 : 19 – 24 февраля 2018 г. : гопрограмма и тезисы докладов / чл. прогр. ком. В. В. Вальков

Держатели документа:
Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Fed Res Ctr,Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Aksenov, S. V.; Аксенов, Сергей Владимирович; Вальков, Валерий Владимирович; Program for Fundamental Research of the Presidium of the Russian Academy of Sciences [32]; Russian Fund for Basic Research [16-02-00073, 18-32-00443]; Government of Krasnoyarsk Krai; Krasnoyarsk Regional Fund for Science [17-42-240441, 18-42-243017]; Russian Federation [MK-3722.2018.2]; Ural International Winter School on the Physics of Semiconductors(22nd ; Feb 20-23, 2018 ; Alapayevsk, Russia)
}
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10.

Growth of Textured Au-Fe/Fe Hybrid Nanocrystals on Oxidized Silicon Surface / I. A. Tarasov [et al.] // Semiconductors. - 2018. - Vol. 52, Is. 16. - P. 2073-2077, DOI 10.1134/S1063782618160364. - Cited References: 19. - The reported research was funded by Russian Foundation for Basic Research and the government of the region of the Russian Federation, grant no. 18-42-243013, the Program of the President of the Russian Federation for the support of young scientist (C Pi-2796.2018.1). We also thank L.A. Solovyov for his asistance in XRD analysis. . - ISSN 1063-7826. - ISSN 1090-6479

РУБ Physics, Condensed Matter
Рубрики:
INTERMETALLIC AU3FE1-X
MAGNETIC-PROPERTIES
FECU NANOPARTICLES
Аннотация: We present in this report the route to produce highly-textured Au3Fe(111)/Fe(110) hybrid nanocrystals on an amorphous surface of SiO2/Si by molecular beam epitaxy. By controlling the quantity of Au atoms deposited onto the SiO2/Si it is possible to tune the average lateral size of resultant Au-Fe hybrid nanocrystals from 10-20 nm up to 100-150 nm at the same Fe nominal thickness deposited. This process is sensitive to the initial density and size of Au islands. Examination of Au-Fe hybrid nanocrystals obtained was carried out using X-ray diffraction, transmission and scanning electron microscopy, reflection high energy electron diffraction, and Kerr effect methods.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Krasnoyarsk State Agr Univ, Achinsk Branch, Achinsk 662150, Russia.
Russian Acad Sci, Fed Res Ctr KSC, Siberian Branch, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Tarasov, I. A.; Тарасов, Иван Анатольевич; Smolyarova, T. E.; Смолярова, Татьяна Евгеньевна; Yakovlev, I. A.; Яковлев, Иван Александрович; Kosyrev, N. N.; Косырев, Николай Николаевич; Komarov, V. A.; Комаров, Василий Андреевич; Nemtsev, I. V.; Varnakov, S. N.; Варнаков, Сергей Николаевич; Patrin, G. S.; Патрин, Геннадий Семёнович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Russian Foundation for Basic Research; government of the region of the Russian Federation [18-42-243013]; Russian Federation [CPi-2796.2018.1]; International Symposium "Nanostructures: Physics and Technology"(26th ; June 18-22, 2018 ; Minsk, Belarus)
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