Библиотека института физики им. Л.В. Киренского СО РАН

Главная

Базы данных

Труды сотрудников ИФ СО РАН - результаты поиска

Вид поиска

Каталог книг и брошюр библиотеки ИФ СО РАН

Каталог журналов библиотеки ИФ СО РАН

Труды сотрудников ИФ СО РАН

Область поиска

в найденном

Найдено в других БД:

Каталог книг и брошюр библиотеки ИФ СО РАН (38)

Каталог журналов библиотеки ИФ СО РАН (2)

Формат представления найденных документов:
полный	информационный	краткий

Отсортировать найденные документы по:
автору	заглавию	году издания	типу документа

Поисковый запрос: (<.>K=Semiconductors<.>)

Общее количество найденных документов : 80
Показаны документы с 1 по 20

Erukhinov, M. S.
The S-D(f)-hybridization effect on light-absorption in impurity magnetic semiconductors / M. S. Erukhinov // Fiz. Tverd. Tela. - 1980. - Vol. 22, Is. 6. - P. 1660-1665. - Cited References: 12 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

WOS
}
Найти похожие

Berzhanskii, V. N.
Photo-excited charge carrier mobility in magnetic p-type semiconductors on CDCR2SE4 bases / V. N. Berzhanskii, V. K. Chernov // Fiz. Tverd. Tela. - 1980. - Vol. 22, Is. 10. - P. 3179-3181. - Cited References: 8 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

WOS

Доп.точки доступа:
Chernov, V. K.; Бержанский, Владимир Наумович
}
Найти похожие

IGNATCHENKO, V. A.
PLASMA-WAVES IN NONUNIFORM SEMICONDUCTORS / V. A. IGNATCHENKO, Y. I. MANKOV, F. V. RAKHMANOV // Fiz. Tverd. Tela. - 1982. - Vol. 24, Is. 8. - P. 2292-2295. - Cited References: 3 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

WOS
Доп.точки доступа:
MANKOV, Y. I.; RAKHMANOV, F. V.
}
Найти похожие

Spin fluctuation effect on the absorption-spectrum of magnetic semiconductors / M. S. ERUKHIMOV [и др.] // Fiz. Tverd. Tela. - 1985. - Vol. 27, Is. 12. - P. 3628-3634. - Cited References: 16 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

WOS
Доп.точки доступа:
ERUKHIMOV, M. S.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Gavrichkov, V. A.; Гавричков, Владимир Александрович; PONOMAREV, V. I.
}
Найти похожие

ERUKHIMOV, M. S.
CARRIER ENERGY FLUCTUATION SHIFT IN WIDE-GAP ANTIFERROMAGNETIC SEMICONDUCTORS / M. S. ERUKHIMOV, S. G. OVCHINNIKOV // Fiz. Tverd. Tela. - 1986. - Vol. 28, Is. 8. - P. 2306-2309. - Cited References: 9 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

WOS
Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
Найти похожие

ERUKHIMOV, M. S.
ELEMENTARY EXCITATIONS IN ANISOTROPIC NARROW-BAND MAGNETIC SEMICONDUCTORS / M. S. ERUKHIMOV, S. G. OVCHINNIKOV // Theor. Math. Phys. - 1986. - Vol. 67, Is. 2. - P. 473-482, DOI 10.1007/BF01118154. - Cited References: 19 . - ISSN 0040-5779

РУБ Physics, Multidisciplinary + Physics, Mathematical

WOS
Доп.точки доступа:
OVCHINNIKOV, S. G.; Овчинников, Сергей Геннадьевич
}
Найти похожие

BATIYEV, E. G.
SUPERCONDUCTIVITY IN MULTI-VALLEY SEMICONDUCTORS / E. G. BATIYEV, V. A. BORISYOUK // Zhurnal Eksperimentalnoi Teor. Fiz. - 1986. - Vol. 90, Is. 2. - P. 558-568. - Cited References: 13 . - ISSN 0044-4510

РУБ Physics, Multidisciplinary

WOS
Доп.точки доступа:
BORISYOUK, V. A.
}
Найти похожие

LOSEVA, G. V.
SPECIFIC FEATURES OF ELECTRIC CONDUCTION IN ALPHA-MNXS ANTIFERROMAGNETIC SEMICONDUCTORS / G. V. LOSEVA, S. G. OVCHINNIKOV, L. I. RYABINKINA // Fiz. Tverd. Tela. - 1986. - Vol. 28, Is. 7. - P. 2048-2052. - Cited References: 12 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

WOS
Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; RYABINKINA, L. I.
}
Найти похожие

KARYAGIN, V. V.
DRAG THERMOELECTRIC-POWER OF A TWO-DIMENSIONAL ELECTRON-GAS IN A GAAS-GAAIAS HETEROSTRUCTURE / V. V. KARYAGIN, I. I. LYAPILIN, V. V. DYAKIN // SOVIET PHYSICS SEMICONDUCTORS-USSR. - 1988. - Vol. 22, Is. 8. - P. 954-955. - Cited References: 3 . - ISSN 0038-5700

РУБ Physics, Condensed Matter

WOS
Доп.точки доступа:
LYAPILIN, I. I.; DYAKIN, V. V.
}
Найти похожие

10.

MAGNETIC PHASE-DIAGRAM OF CRXMN1-XS ANTIFERROMAGNETIC SEMICONDUCTORS / G. A. PETRAKOVSKII [и др.] // Fiz. Tverd. Tela. - 1989. - Vol. 31, Is. 4. - P. 172-176. - Cited References: 7 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

WOS
Доп.точки доступа:
PETRAKOVSKII, G. A.; APLESNIN, S. S.; LOSEVA, G. V.; RYABINKINA, L. L.
}
Найти похожие

11.

DROKIN, N. A.
NONLINEAR PHOTOELECTRICAL EFFECTS IN MAGNETIC CDCR2SE4 SEMICONDUCTORS / N. A. DROKIN, S. M. GANIEV, V. M. POPEL // Zhurnal Tek. Fiz. - 1989. - Vol. 59, Is. 4. - P. 167-169. - Cited References: 6 . - ISSN 0044-4642

РУБ Physics, Applied

WOS
Доп.точки доступа:
GANIEV, S. M.; POPEL, V. M.
}
Найти похожие

12.

ERUKHIMOV, M. S.
IMPURITY STATES AND RESONANCE PROPERTIES OF FERROMAGNETIC SEMICONDUCTORS / M. S. ERUKHIMOV, S. G. OVCHINNIKOV // Fiz. Tverd. Tela. - 1989. - Vol. 31, Is. 1. - P. 33-39. - Cited References: 17 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

WOS
Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
Найти похожие

13.

BORISYOUK, V. A.
SUPERRADIATIVE PHASE-TRANSITIONS IN SEMICONDUCTORS AND SEMIMETALS / V. A. BORISYOUK // Zhurnal Eksperimentalnoi Teor. Fiz. - 1990. - Vol. 97, Is. 6. - P. 1882-1891. - Cited References: 37 . - ISSN 0044-4510

РУБ Physics, Multidisciplinary

WOS
}
Найти похожие

14.

OVCHINNIKOV, S. G.
NOVEL MECHANISM FOR THE FORMATION OF IMPURITY LEVELS IN SEMICONDUCTORS WITH THE STRONG ELECTRON CORRELATIONS / S. G. OVCHINNIKOV // Zhurnal Eksperimentalnoi Teor. Fiz. - 1992. - Vol. 102, Is. 2. - P. 534-540. - Cited References: 8 . - ISSN 0044-4510

РУБ Physics, Multidisciplinary

Аннотация: In the framework of the generalized tight binding method involving the strong electron correlations it is shown that in spite of the lattice regularity the impurity-like localized levels may arise within the semiconducting gap with the deviation of the electron concentration from the integer value. The appearance of these levels is due to the contribution of multi-electron excited terms into the single-particle density of states.

WOS
}
Найти похожие

15.

GAVRICHKOV, V. A.
DISTORTION OF A COMPLEX DEFECT WITH A WEAK BINDING / V. A. GAVRICHKOV // Semiconductors. - 1993. - Vol. 27, Is. 10. - P. 921-924. - Cited References: 6 . - ISSN 1063-7826

РУБ Physics, Condensed Matter

Аннотация: A simple non-self-consistent approach is used in an analysis of the distortion of a complex defect characterized by a weak binding. The dependences of the magnitude of the distortion of a two-component defect on the position of its local population levels and on the number of carriers in a band are given.

WOS

Доп.точки доступа:
Гавричков, Владимир Александрович
}
Найти похожие

16.

Metal-dielectric transition in the system of antiferromagnetic VxMn1-xS semiconductors / G. A. Petrakovskii [и др.] // Fiz. Tverd. Tela. - 1996. - Vol. 38, Is. 7. - P. 2131-2134. - Cited References: 5 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

WOS
Доп.точки доступа:
Petrakovskii, G. A.; Loseva, G. V.; Ryabinkina, L. I.; Kiselev, N. I.; Yanushkevich, K. I.
}
Найти похожие

17.

Colossal magnetoresistance of FexMn1-xS magnetic semiconductors / G. A. Petrakovskii [et al.] // JETP Letters. - 1999. - Vol. 69, Is. 12. - P. 949-953, DOI 10.1134/1.568118. - Cited References: 8 . - ISSN 0021-3640

РУБ Physics, Multidisciplinary
Рубрики:
MANGANITES
Аннотация: The magnetic, electric, magnetoresistive, and structural properties are investigated in the sulfide solid solutions FexMn1-xS, which are based on the antiferromagnetic semiconductor alpha-MnS (the fcc NaCl lattice). Colossal negative magnetoresistance (delta(H)similar to-83% at 160 K for x similar to 0.29), comparable to that observed in La-Ca-Mn-O polycrystals and films (delta(H)similar to-90% at 100 K and 40 kOe), is observed in compounds with intermediate concentrations 0.26 x 0.4, corresponding to the region of incipient ferromagnetism. (C) 1999 American Institute of Physics. [S0021-3640(99)01212-8].

WOS,
Scopus,
Читать в сети ИФ
Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
Krasnoyarsk State Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН

Доп.точки доступа:
Petrakovskii, G. A.; Петраковский, Герман Антонович; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна; Kiselev, N. I.; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Bovina, A. F.; Бовина, Ася Федоровна; Abramova, G. M.; Абрамова, Галина Михайловна
}
Найти похожие

18.

Alekseev, K. N.
Direct-current generation due to wave mixing in semiconductors / K. N. Alekseev, M. V. Erementchouk, F. V. Kusmartsev // Europhys. Lett. - 1999. - Vol. 47, Is. 5. - P. 595-600, DOI 10.1209/epl/i1999-00430-0. - Cited References: 34 . - ISSN 0295-5075

РУБ Physics, Multidisciplinary
Рубрики:
BLOCH OSCILLATOR
   SUPERLATTICES
   PHOTOCURRENT
   TRANSPORT
   FREQUENCY
   FIELD
   RECTIFIERS
   EMISSION
   CHAOS
   GAAS
Аннотация: We describe an effect of the generation of direct current which may arise in semiconductors or semiconductor microstructures due to a mixing of coherent electromagnetic radiations of commensurate frequencies. The effect is, in essence, due to a nonparabolicity of the electron energy bands and is stronger in systems where this nonparabolicity is greater. We have made exact calculations in the framework of the Kane model, applicable to narrow-gap semiconductors and the tight-binding model which we employ for a description of a semiconductor superlattice.

WOS,
Scopus,
Читать в сети ИФ
Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Loughborough Univ Technol, Sch Math & Phys Sci, Loughborough LE11 3TU, Leics, England
Russian Acad Sci, LD Landau Theoret Phys Inst, Chernogolovka 142432, Russia
ИФ СО РАН
Kirensky Institute of Physics, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Sch. of Math. and Physical Sciences, Loughborough University, Loughborough LE11 3TU, United Kingdom
Landau Inst. for Theoretical Physics, Russian Academy of Sciences, Moscow 142432, Russian Federation

Доп.точки доступа:
Erementchouk, M. V.; Kusmartsev, F. V.
}
Найти похожие

19.

Gavrichkov, V. A.
Characteristic features of the extrinsic electric resistance in ferromagnets with low carrier density / V. A. Gavrichkov, S. G. Ovchinnikov // Phys. Solid State. - 1999. - Vol. 41, Is. 1. - P. 59-66, DOI 10.1134/1.1130731. - Cited References: 26 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
QUANTUM TEMPERATURE OSCILLATIONS
   MAGNETIC SEMICONDUCTORS
   HGCR2SE4
   RESISTIVITY
   FILMS
Аннотация: Switching from simple semiconductors to more complicated chemical compositions, we encounter mainly nonstoichiometric or undoped compounds. Combined with other characteristic features of d(f) compounds, this can lead, together with the ordinary scattering by spin disorder in magnetic semiconductors, to an unusual impurity contribution to the total scattering of carriers even in intrinsic semiconductors. A unique scheme for calculating the energy structure of the conduction-band bottom of a ferromagnetic semiconductor and the temperature and field dependences of the impurity contribution to the resistivity is proposed on the basis of a model Hamiltonian. The computed magnetoresistance ratio is negative and has a maximum near T-c. A qualitative comparison is made between the results and the experimental temperature dependences of the Hall mobility and magnetoresistance ratio in the ternary semiconductor n-HgCr2Se4, which is nonstoichiometric with respect to the chalcogen. To identify previously unobserved temperature oscillations of the resistance, a careful analysis is made of the low-temperature part of the resistance using the relations obtained. (C) 1999 American Institute of Physics. [S1063-7834(99)01701-3].

WOS,
Scopus,
Читать в сети ИФ

Публикация на русском языке Гавричков, Владимир Александрович. Особенности примесного электросопротивления в ферромагнетиках с малой концентрацией носителей [Текст] / В. А. Гавричков, С. Г. Овчинников // Физ. тверд. тела. - С.-Петербург, 1999. - Т. 41 Вып. 1. - С. 68-76

Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Гавричков, Владимир Александрович
}
Найти похожие

20.

On the non-orthogonality problem in the description of quantum devices / J. . Fransson [et al.] // Physica B. - 1999. - Vol. 272, Is. 1-4. - P. 28-30, DOI 10.1016/S0921-4526(99)00343-9. - Cited References: 8 . - ISSN 0921-4526

РУБ Physics, Condensed Matter
Рубрики:

Кл.слова (ненормированные):
non-orthogonality -- current -- tunneling -- Correlation methods -- Electric contacts -- Electric currents -- Electron energy levels -- Electron tunneling -- Equations of motion -- Green's function -- Mathematical operators -- Matrix algebra -- Hubbard operators -- Potential barriers -- Tunneling currents -- Semiconductor quantum dots
Аннотация: An approach which allows to include the corrections from non-orthogonality of electron states in contacts and quantum dots is developed. Comparison of the energy levels and charge distributions of electrons in 1D quantum dot (QD) in equilibrium, obtained within orthogonal (OR) and non-orthogonal representations (NOR), with the exact ones shows that the NOR provides a considerable improvement, for levels below the top of barrier. The approach is extended to non-equilibrium states. A derivation of the tunneling current through a single potential barrier is performed using equations of motion for correlation functions. A formula for transient current derived by means of the diagram technique for Hubbard operators is given for the problem of QD with strongly correlated electrons interacting with electrons in contacts. The non-orthogonality renormalizes the tunneling matrix elements and spectral weights of Green functions. (C) 1999 Elsevier Science B.V. All rights reserved.

WOS,
Scopus,
Читать в сети ИФ
Держатели документа:
Univ Uppsala, Condensed Matter Theory Grp, S-75121 Uppsala, Sweden
RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН
Condensed Matter Theory Group, Uppsala University, Box 530, 751 21, Uppsala, Sweden
Kirensky Institute of Physics, RAS, 660036, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Fransson, J.; Eriksson, O.; Johansson, B.; Sandalov, I. S.; Сандалов, Игорь Семёнович; International Conference on Nonequilibrium Carrier Dynamics in Semiconductors(11 ; 1999 ; July ; 19-23 ; Kyoto, Japan)
}
Найти похожие