Библиотека института физики им. Л.В. Киренского СО РАН

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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Belousov A. L., Patrusheva T. N., Karacharov A. A., Ivanenko A. A., Kirik S. D., Khol'kin A. I.
Заглавие : Amorphous and Crystalline Nickel Oxide Films Obtained by the Extraction-Pyrolysis Method for Electrochromic Cells
Коллективы : program "Research and Development for the Priority Areas of the Russian Science-and-Technology Sector for 2014-2020" [075-15-2019-1843]; [RFMEFI60719X0307]
Место публикации : Theor. Found. Chem. Eng. - 2020. - Vol. 54, Is. 4. - P.699-705. - ISSN 0040-5795, DOI 10.1134/S0040579520040041. - ISSN 1608-3431(eISSN)
Примечания : Cited References: 8. - This work was performed as part of the program "Research and Development for the Priority Areas of the Russian Science-and-Technology Sector for 2014-2020"; Grant Agreement no. 075-15-2019-1843; the Project Unique Identifier RFMEFI60719X0307
Предметные рубрики: NIO THIN-FILMS
Аннотация: This paper reports studies of thin films of nickel oxide obtained by the extraction–pyrolysis method on glass and quartz substrates at temperatures of 380–600°C. The films have been characterized by atomic force microscopy and X-ray diffraction. It is shown that amorphous and crystalline nickel oxide films are formed on the glass. The grain size depends on the annealing temperature, while increased annealing temperatures lead to recrystallization and a decrease in the grain size in NiO films from 130 to 35 nm.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zobov V. E., Pichkovskiy I. S.
Заглавие : Associative memory on qutrits by means of quantum annealing
Место публикации : Quantum Inf. Process. - 2020. - Vol. 19, Is. 9. - Ст.342. - ISSN 1570-0755, DOI 10.1007/s11128-020-02851-x. - ISSN 1573-1332(eISSN)
Примечания : Cited References: 23
Аннотация: When associative memory is implemented on the well-studied Hopfield network, patterns are recorded in the interaction constants between binary neurons. These constants are chosen so that each pattern should have its own minimum energy of the system described by the Ising model. In the quantum version of the Hopfield network, it was proposed to recall such states by the adiabatic change of the Hamiltonian in time. Qubits, quantum elements with two states, for example, spins with S=1/2 were considered as neurons. In this paper, for the first time, we study the function of associative memory using three-level quantum elements-qutrits, represented by spins with S=1. We record patterns with the help of projection operators. This choice is due to the need to operate with a state with a zero spin projection, whose interaction with the magnetic field vanishes. We recall the state corresponding to one of the patterns recorded in the memory, or superposition of such states by means of quantum annealing. To equalize the probabilities of finding the system in different states of superposition, an auxiliary Hamiltonian is proposed, which is turned off at the end of evolution. Simulations were performed on two and three qutrits and an increase in the memory capacity after replacing qubits with qutrits was shown.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Zobov V. E., Pichkovskiy I. S.
Заглавие : Associative memory on qutrits by means of quantum annealing
Коллективы : "Magnetic Resonance - Current State and Future Perspectives", International Conference, Казанский (Приволжский) федеральный университет, Казанский физико-технический институт им. Е. К. Завойского Казанского научного центра РАН
Место публикации : International Conference “Magnetic Resonance – Current State and Future Perspectives” (EPR-75): book of abstracts. - Kazan, 2019. - P.63
Примечания : Cited References: 6
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Krasikov A. A., Stolyar S. V., Iskhakov R. S., Ladygina V. P., Yaroslavtsev R. N., Bayukov O. A., Vorotynov A. M., Volochaev M. N., Dubrovskiy A. A.
Заглавие : Change in the magnetic properties of nanoferrihydrite with an increase in the volume of nanoparticles during low-temperature annealing
Место публикации : Phys. Solid State: MAIK Nauka-Interperiodica / Springer, 2016. - Vol. 58, Is. 9. - P.1782-1791. - ISSN 10637834 (ISSN), DOI 10.1134/S1063783416090092
Примечания : Cited References: 32. - This study was supported by the Ministry of Education and Science of the Russian Federation within the State Task for 2014-2016.
Предметные рубрики: FERRIHYDRITE NANOPARTICLES
BACTERIAL FERRIHYDRITE
FERRITIN
HYSTERESIS
MOSSBAUER
ORIGIN
Аннотация: The results of the investigation into the effect of low-temperature annealing of a powder of nanoparticles of bacterial ferrihydrite on its magnetic properties have been presented. It has been found that an increase in the time (up to 240 h) and temperature (in the range from 150 to 200°C) of annealing leads to a monotonic increase in the superparamagnetic blocking temperature, the coercive force, and the threshold field of the opening of the magnetic hysteresis loop (at liquid-helium temperatures), as well as to an increase in the magnetic resonance line width at low temperatures and in the magnetic susceptibility at room temperature. At the same time, according to the results of the analysis of the Mossbauer spectra, the annealing of ferrihydrite does not lead to the formation of new iron oxide phases. Most of these features are well consistent with the fact that the low-temperature annealing of ferrihydrite causes an increase in the size of nanoparticles, which is confirmed by the results of transmission electron microscopy studies. © 2016, Pleiades Publishing, Ltd.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zobov V. E., Pichkovskiy I. S.
Заглавие : Clustering by quantum annealing on the three-level quantum elements qutrits
Место публикации : Quantum Inf. Process. - 2022. - Vol. 21, Is. 4. - Ст.144. - ISSN 15700755 (ISSN), DOI 10.1007/s11128-022-03482-0
Примечания : Cited References: 28. - This study was supported by the Theoretical Physics and Mathematics Advancement Foundation “BASIS” #20-1-5-41-1. We are grateful for their trust and assistance in research
Аннотация: Clustering is grouping of data by the proximity of some properties. We report on the possibility of increasing the efficiency of clustering of points in a plane using artificial quantum neural networks after the replacement of the two-level neurons called qubits represented by the spins S = 1/2 by the three-level neurons called qutrits represented by the spins S = 1. The problem has been solved by the slow adiabatic change of the Hamiltonian in time. The methods for controlling a qutrit system using projection operators have been developed and the numerical simulation has been performed. The Hamiltonians for two well-known clustering methods, one-hot encoding and k-means, have been built. The first method has been used to partition a set of six points into three or two clusters and the second method, to partition a set of nine points into three clusters and seven points into four clusters. The simulation has shown that the clustering problem can be effectively solved on qutrits represented by the spins S = 1. The advantages of clustering on qutrits over that on qubits have been demonstrated. In particular, the number of qutrits required to represent N data points is smaller than the number of qubits by a factor of log 2N/ log 3N. For qutrits, the simplest is to partition the data points into three clusters rather than two ones. At the data partition into more than three clusters, it has been proposed to number the clusters by the numbers of states of the corresponding multi-spin subsystems, instead of using the numbers of individual spins. This reduces even more the number of qutrits (Nlog 3K instead of NK) required to implement the algorithm.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Denisova E. A., Komogortsev S. V., Iskhakov R. S., Chekanova L. A., Velikanov D. A., Kalinin Y. E., Sitnikov A. V.
Заглавие : Effect of annealing on the magnetic properties of (Co40Fe40B20)x(SiO2)1–x granular nanocomposites
Место публикации : Bull. Russ. Acad. Sci. Phys.: Allerton Press, 2016. - Vol. 80, Is. 11. - P.1332-1334. - ISSN 10628738 (ISSN), DOI 10.3103/S1062873816110186
Примечания : Cited References: 31. - This work was supported by the Russian Foundation for Basic Research, project nos. 15-08-06673, 16-03-00256, and RFBR-KRFS 15-42-04171.
Ключевые слова (''Своб.индексиров.''): annealing--magnetic properties--multilayers--spin waves--sputtering--concentration dependence--effect of annealing--granular composites--ion-beam sputtering--metal phase--spin wave resonances--ion beams
Аннотация: The effect of annealing on the magnetic properties of (Co40Fe40B20)x(SiO2)1–x granular composites fabricated via ion-beam sputtering is investigated. It is established that annealing changes the concentration dependences of the ferromagnetic resonance field and linewidth and shifts the regions of metal phase concentration corresponding to the spin-wave resonance. © 2016, Allerton Press, Inc.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Sheftel E. N., Iskhakov R. S., Komogortsev S. V., Sidorenko P. K., Utitskikh S. I., Perov N. S.
Заглавие : Effects of annealing on magnetic properties and structural features of nanocrystalline Fe79Zr10N11 films
Коллективы : Moscow International Symposium on Magnetism, Московский государственный университет им. М.В. Ломоносова, Российский фонд фундаментальных исследований
Место публикации : Moscow Int. Symp. on Magnet. (MISM-2008): June 20-25, 2008, Moscow : book of abstract. - 2008. - Ст.25PO-13-10. - p.750-751
Примечания : Библиогр.: 3. - Support by RFFI grant 08–03–00104–a is acknowledged
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Zhigalov V. S., Matsynin A. A., Bykova L. E., Mikhlin Y. L., Bondarenko G. N., Patrin G. S., Yurkin G. Yu.
Заглавие : Formation of ferromagnetic germanides by solid-state reactions in 20Ge/80Mn films
Место публикации : Thin Solid Films: Elsevier Science, 2014. - Vol. 552. - P.86-91. - ISSN 0040-6090, DOI 10.1016/j.tsf.2013.12.029
Примечания : Cited References: 53
Предметные рубрики: PHASE-FORMATION
MAGNETIC-PROPERTIES
Mn5Ge3 FILMS
X-RAY
Ge(111)
TRANSFORMATIONS
DIFFUSION
SPECTRA
SYSTEM
LAYERS
Ключевые слова (''Своб.индексиров.''): manganite-germanium--solid state reaction--first phase--mn5ge3 alloy--carbon impurity--oxygen impurity--annealing--magnetic anisotropy
Аннотация: Solid state reactions between Ge and Mn films are systematically examined using X-ray diffraction, photoelectron spectroscopy, and magnetic and electrical measurements. The films have a nominal atomic ratio Ge:Mn = 20:80 and are investigated at temperatures from 50 to 500 °C. It is established that after annealing at ~ 120°C, the ferromagnetic Mn5Ge3 phase is the first phase to form at the 20Ge/80Mn interface. As the annealing temperature increases to 300°C, the weak magnetic Mn5Ge 2 + Mn3Ge phases simultaneously begin to grow and they become dominant at 400°C. Increasing the annealing temperature to 500°C leads to the formation of the ferromagnetic phase with a Curie temperature TC ~ 350-360 K and magnetization 14-25 kA/m at room temperature. The X-ray diffraction study of the samples shows the reflections from the Mn 5Ge3 phase, and the photoelectron spectra contain the oxygen and carbon peaks. The homogeneous distribution of oxygen and carbon over the sample thickness suggests that the increased Curie temperature and magnetization are related to the migration of C and O atoms into the Mn 5Ge3 lattice and the formation of the Nowotny phase Mn5Ge3CxOy. The initiation temperature (~ 120 C) is the same in the Mn5Ge3 phase with the solid-state reactions in the Ge/Mn films as well as in the phase separation in the GexMn1 - x diluted semiconductors. Thus, we conclude that the synthesis of the Mn5Ge3 phase is the moving force for the spinodal decomposition of the GexMn 1 - x diluted semiconductors.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Chepkasov I. V., Baidyshev V. S., Sukhanova E. V., Visotin M. A., Sule P., Popov Z. I.
Заглавие : Iron silicides formation on Si (100) and (111) surfaces through theoretical modeling of sputtering and annealing
Место публикации : Appl. Surf. Sci. - 2020. - Vol. 527. - Ст.146736. - ISSN 01694332 (ISSN), DOI 10.1016/j.apsusc.2020.146736
Примечания : Cited References: 67. - We thank Dr. Ivan Tarasov for fruitful discussions. The research is carried out using the equipment of the shared research facilities of HPC computing resources at Lomonosov Moscow State University and resources of the Center for the Information and Computing of Novosibirsk State University. The molecular dynamics study of sputtering and annealing iron silicides was supported by the Russian Science Foundation, project no. 16-13-00060-П. All quantum-chemical calculations were supported by Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST “MISiS” (No. K2-2020-009)
Аннотация: The iron silicides formation during epitaxial film grown process on the (100) and (111) silicon surfaces were investigated using molecular dynamics (MD). The iron and silicon atom deposition rate and silicon substrate temperature influence on the formed iron silicide structure and stoichiometric composition were studied in detail. During the growth of iron silicide crystal structure significant diffusion of the substrate atoms into the forming BCC core occurs, this intensifies with the substrate temperature increase, and the ratio of substrate atoms inside the Fe3Si phase reaches nearly 12%. The BCC structure formation is less active on the (100) surface, and at the temperatures as low as 26 °C and 300 °C the iron silicide crystal phase does not form at all. However, with the temperature increase or the deposition rate decrease, the crystal structure formation processes occur more actively in both cases of (100) and (111) surfaces. Thus, the effect of the deposition rate decrease is identical to the temperature growth. It was shown that the formation of the structured B2 phase of iron silicide in buffer layer between the film and the substrate leads to the inhibition of the mutual diffusion of iron and silicon atoms.
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10.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Komogortsev S. V., Chizhik N. A., Filatov E. Yu., Korenev S. V., Shubin Yu.V., Velikanov D. A., Iskhakov R. S., Yurkin G.Yu.
Заглавие : Magnetic properties and L1 0 phase formation in CoPt nanoparticles
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P.159-162. - ISBN 1012-0394, DOI 10.4028/www.scientific.net/SSP.190.159. - ISBN 9783037854365
Ключевые слова (''Своб.индексиров.''): hard magnetic--magnetic anisotropy--magnetic nanoparticles--remnant magnetization--annealing time--copt nanoparticles--disorder-order--domain formation--hard magnetic--magnetic anisotropy energy--magnetic nanoparticles--phase formations--remnant magnetization--decomposition--magnetic anisotropy--magnetic materials--remanence--nanoparticles
Аннотация: The effect of the atomic disorder-order transformation on remanence, coercivity and magnetic anisotropy energy in CoPt nanoparticles prepared by thermal decomposition and annealed at 400oC for 4 and 16 hours has been studied. The observed remanence and magnetic anisotropy energy enhancement versus annealing time are discussed in the terms of ordering domain formation inside nanoparticles. В© (2012) Trans Tech Publications.
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