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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : OVCHINNIKOV S. G.
Заглавие : CHANGE OF THE DENSITY OF STATES WITH HOLE DOPING IN CUO2 LAYERS
Место публикации : Zhurnal Eksperimentalnoi Teor. Fiz.: MEZHDUNARODNAYA KNIGA, 1993. - Vol. 103, Is. 4. - P1404-1410. - ISSN 0044-4510
Примечания : Cited References: 7
Аннотация: By means of the exact diagonalization of the many-electron hamiltonian the single-particle density of states is calculated for CuO4 cluster. For undoped case there is a dielectric gap in which new states arise with hole doping. The concentration dependence of the Fermi level is found and the critical concentration of the insulator-metal Anderson transition is evaluated.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Patrin G. S., Volkov N. V., Vasiliev V. N.
Заглавие : The ''easy plane easy axis'' transition in alpha-Fe2O3:Ga crystals induced by doping with terbium ions
Место публикации : Phys. Lett. A. - 1997. - Vol. 230, Is. 1-2. - P.96-98. - ISSN 0375-9601, DOI 10.1016/S0375-9601(97)00219-3
Примечания : Cited References: 10
Аннотация: In easy plane weak ferromagnetic alpha-Fe2O3:Ga crystals it was found that doping with a hundredth part of To ions leads to the restoration of the transition into the ''easy axis'' magnetic state. It was established that in the alpha-Fe2O3:Ga, Tb crystal the angular magnetic phase is realized. (C) 1997 Published by Elsevier Science B.V.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gavrichkov V. A., Ovchinnikov S. G., Borisov A. A., Goryachev E. G.
Заглавие : Evolution of the band structure of quasiparticles with doping in copper oxides on the basis of a generalized tight-binding method
Место публикации : J. Exp. Theor. Phys.: AMER INST PHYSICS, 2000. - Vol. 91, Is. 2. - P369-383. - ISSN 1063-7761, DOI 10.1134/1.1311997
Примечания : Cited References: 45
Предметные рубрики: T-J MODEL
CUPRATE SUPERCONDUCTORS
ELECTRONIC-STRUCTURE
EXCITATIONS
DEPENDENCE
TEMPERATURE
DERIVATION
SR2CUO2CL2
SPECTRUM
DENSITY
Аннотация: Two methods for stabilizing the two-hole B-3(1g) state as the ground state instead of the Zhang-Rice singlet are determined on the basis of an orthogonal cellular basis for a realistic multiband pd model of a CuO2 layer and the dispersion relations for the valence band top in undoped and doped cases are calculated. In the undoped case, aside from the valence band, qualitatively corresponding to the experimental ARPES data for Sr2CuO2Cl2 and the results obtained on the basis of the t-t'-J model, the calculations give a zero-dispersion virtual level at the valence band top itself. Because of the zero amplitude of transitions forming the virtual level the response corresponding to it is absent in the spectral density function. In consequence, the experimental ARPES data do not reproduce its presence in this antiferromagnetic undoped dielectric. A calculation of the doped case showed that the virtual level transforms into an impurity-type band and acquires dispersion on account of the nonzero occupation number of the two-hole states and therefore should be detected in ARPES experiments as a high-energy peak in the spectral density. The computed dispersion dependence for the valence band top is identical to the dispersion obtained by the Monte Carlo method, and the ARPES data for optimally doped Bi2Sr2CaCu2O8 + delta samples. The data obtained also make it possible to explain the presence of an energy pseudogap at the symmetric X point of the Brillouin band of HTSC compounds. (C) 2000 MAIK "Nauka/Interperiodica".
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kliava J., Edelman I. S., Potseluyko A. M., Petrakovskaja E. A., Berger R., Bruckental I., Yeshurun Y., Malakhovskii A. V., Zarubina Y. V.
Заглавие : Magnetic and optical properties and electron paramagnetic resonance of gadolinium-containing oxide glasses
Место публикации : J. Phys.: Condens. Matter: IOP PUBLISHING LTD, 2003. - Vol. 15, Is. 40. - P6671-6681. - ISSN 0953-8984, DOI 10.1088/0953-8984/15/40/005
Примечания : Cited References: 30
Предметные рубрики: ABSORPTION-SPECTRA
FARADAY-ROTATION
SPIN-RESONANCE
IONS
GD3+
SPECTROSCOPY
BEHAVIOR
GD-3
Ключевые слова (''Своб.индексиров.''): doping (additives)--electronic structure--glass--lanthanum compounds--light absorption--magnetic susceptibility--oxides--paramagnetic resonance--positive ions--rate constants--substitution reactions--absorption band--gadolinium containing oxide glasses--positive weiss constants--gadolinium compounds
Аннотация: Magnetic susceptibility, electron paramagnetic resonance (EPR) and optical absorption have been studied in a glass system 20La(2)O(3)-22Al(2)O(3)-23B(2)O(3)-35(SiO2 + GeO2) with a part of La2O3 substituted by Gd2O3 in different concentrations. Positive Weiss constants have been found in more heavily doped glasses and ascribed to clustering of Gd3+ ions. Computer simulations of the EPR spectra show that the short-range ordering in the environment of the Gd3+ ions is well preserved. The relative distribution widths of the ligand coordinates are less than 2%. In the more heavily doped glasses the EPR spectra are superpositions of signals arising from isolated ions and ferromagnetic clusters. The increase of Gd3+ concentration is shown to change substantially the strong optical absorption edge while only small changes of f-f absorption band characteristics are observed. This difference is associated with the different effect of the Gd ion clustering on the mechanisms of the strong absorption in the ultraviolet region and the f-f absorption.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Borisov A. A., Gavrichkov V. A., Ovchinnikov S. G.
Заглавие : Doping dependence of the band structure and chemical potential in cuprates by the generalized tight-binding method
Коллективы : International Conference on Modern Problems in Superconductivity
Место публикации : Mod. Phys. Lett. B/ International Conference on Modern Problems in Superconductivity (3 ; 2002 ; Sept. ; 9-14 ; Yalta, Ukrain). - 2003. - Vol. 17, Is. 10-12. - P.479-486. - ISSN 0217-9849, DOI 10.1142/S0217984903005500
Примечания : Cited References: 12
Предметные рубрики: CORRELATED ELECTRONS
SUPERCONDUCTIVITY
OXIDES
Аннотация: Quasiparticle band structure in hole doped CuO2 layer is calculated with account for strong electron correlations in the framework of multiband p-d model. For undoped layer we obtain the charge-transfer antiferromagnetic insulator. With doping unusual impurity-like quasiparticle appears at the top of the valence band with spectral weight proportional to doping concentration. In the overdoped regime the band structure in the paramagnetic phase results in the doping dependent Fermi surface in agreement to ARPES data.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Borisov A.A., Gavrichkov V. A., Ovchinnikov S. G.
Заглавие : Temperature and concentration dependences of the electronic structure of copper oxides in the generalized tight binding method
Место публикации : J. Exp. Theor. Phys.: AMER INST PHYSICS, 2003. - Vol. 97, Is. 4. - P773-780. - ISSN 1063-7761, DOI 10.1134/1.1625067
Примечания : Cited References: 25
Предметные рубрики: SUPERCONDUCTING-GAP ANISOTROPY
BAND-STRUCTURE
FERMI-SURFACE
NORMAL-STATE
BI2SR2CACU2O8+DELTA
EVOLUTION
Ключевые слова (''Своб.индексиров.''): doping (additives)--electron transitions--electronic structure--fermi level--fermi surface--electron correlations--pseudogap--tight binding method--valence band--copper oxides
Аннотация: The electronic structure of p-type doped HTSC cuprates is calculated by explicitly taking into account strong electron correlations. The smooth evolution of the electronic structure from undoped antiferromagnetic to optimally and heavily doped paramagnetic compositions is traced. For a low doping level, in-gap impurity-type states are obtained, at which the Fermi level is pinned in the low-doping region. These states are separated by a pseudogap from the valence band. The Fermi surfaces calculated for the paramagnetic phase for various concentrations of holes are in good agreement with the results of ARPES experiments and indicate a gradual change in the Fermi surface from the hole type to the electron type. (C) 2003 MAIK "Nauka/Interperiodica".
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Korshunov M. M., Gavrichkov V. A., Ovchinnikov S. G., Manske D., Eremin I.
Заглавие : Effective parameters of the band dispersion in n-type high-T-c superconductors
Разночтения заглавия :авие SCOPUS: Effective parameters of the band dispersion in n-type high-Tc superconductors
Место публикации : Physica C: ELSEVIER SCIENCE BV, 2004. - Vol. 402, Is. 4. - P365-370. - ISSN 0921-4534, DOI 10.1016/j.physc.2003.10.017
Примечания : Cited References: 32
Предметные рубрики: DOPED CUPRATE SUPERCONDUCTORS
TIGHT-BINDING METHOD
QUASI-PARTICLES
COPPER OXIDES
LA2-XSRXCUO4
SYMMETRY
MODEL
EVOLUTION
ORDER
Ключевые слова (''Своб.индексиров.''): high-t-c superconductivity--electronic correlations--electron-doped cuprates--electron-doped cuprates--electronic correlations--high-tc superconductivity--approximation theory--atomic physics--band structure--binding energy--charge transfer--correlation methods--doping (additives)--electronic structure--hamiltonians--mathematical models--mathematical operators--oxide superconductors--perturbation techniques--photoelectron spectroscopy--atomic orbitals--conduction band--electron doped cuprates--electron spins--valence band--high temperature superconductors
Аннотация: The electronic structure of electron-doped cuprates is discussed in the regions of small and optimal doping. For optimal doping we obtain the parameters from a simple tight-binding analysis by fitting ARPES data, and for small doping we study the band structure by the generalized tight-binding method that takes strong electronic correlations into account explicitly. This method has also reproduced well the ARPES data for small doping. The effective low-energy Hamiltonian is the t-t'-J model with hopping parameters t and t'. We compare both methods and find very good agreement for the value of t while t' is different because it is caused by the different contribution of the short-range spin correlations. (C) 2003 Elsevier B.V. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Ovchinnikov S. G., Borisov A. A., Gavrichkov V. A., Korshunov M. M.
Заглавие : Prediction of the in-gap states above the top of the valence band in undoped insulating cuprates due to the spin-polaron effect
Место публикации : J. Phys.: Condens. Matter: IOP PUBLISHING LTD, 2004. - Vol. 16, Is. 8. - PL93-L100. - ISSN 0953-8984, DOI 10.1088/0953-8984/16/8/L04
Примечания : Cited References: 25
Предметные рубрики: ELECTRONIC-STRUCTURE
LA2-XSRXCUO4
MODEL
ANTIFERROMAGNETISM
SPECTRA
OXIDES
Ключевые слова (''Своб.индексиров.''): quasiparticle band structure--spin-polaron effect--antiferromagnetic materials--approximation theory--doping (additives)--electronic structure--hamiltonians--insulation--magnetic fields--strontium compounds--thermal effects--lanthanum compounds
Аннотация: In the framework of the generalized tight binding method we have calculated the quasiparticle band structure and the spectral functions of the undoped cuprates such as La2CuO4, Sr2CUO2Cl2 etc. Due to spin fluctuations the in-gap state appears above the top of the valence band in the undoped antiferromagnetic insulator similar to in-gap states induced by hole doping. In the ARPES experiments the in-gap states can be detected as weak low energy satellites.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gavrichkov V. A., Ovchinnikov S. G.
Заглавие : The band structure of n-type cuprate superconductors with the T '(T) structure taking into account strong electron correlation
Разночтения заглавия :авие SCOPUS: The band structure of n-type cuprate superconductors with the T′(T) structure taking into account strong electron correlation
Место публикации : J. Exp. Theor. Phys.: AMER INST PHYSICS, 2004. - Vol. 98, Is. 3. - P556-564. - ISSN 1063-7761, DOI 10.1134/1.1705708
Примечания : Cited References: 18. - This work was financially supported by the Russian Foundation for Basic Research (project no. 03-02-16124), RFFI-KKFN “Eniseœ” (project no. 02-02-97705), INTAS (project no. 01-0654), integration program of URO and Siberian Division, Russian Academy of Sciences
Предметные рубрики: QUASI-PARTICLES
COPPER OXIDES
TEMPERATURE
LA2-XSRXCUO4
ND2-XCEXCUO4
EVOLUTION
MOMENTS
Ключевые слова (''Своб.индексиров.''): dielectric properties--electric conductance--electron transitions--electronic structure--fermi level--phase diagrams--semiconductor doping--conduction bands--electron correlation--spectral density--superconducting materials
Аннотация: The spectral density, dispersion relations, and the position of the Fermi level for n-doped compositions based on NCO and LCO were calculated within the framework of the generalized tight binding method. As distinguished from LCO, the dielectric gap in NCO is nonlinear in character. We observe a virtual level both at the bottom of the conduction band and at the top of the valence band in both compounds. However, its position corresponds to the extreme bottom of the conduction band in LCO and is 0.1 - 0.2 eV above the bottom in NCO. This explains why we observe Fermi level pinning in n-LCO as the concentration of the doping component grows and reproduce its absence in NCCO at low doping values. We also found both compositions to be unstable in a narrow concentration range with respect to a nonuniform charge density distribution. The relation between the phase diagram for NCCO and the calculated electronic structure is discussed. (C) 2004 MAIK "Nauka/Interperiodica".
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Korshunov M. M., Gavrichkov V. A., Ovchinnikov S. G., Pchelkina Z. V., Nekrasov I. A., Korotin M. A., Anisimov V. I.
Заглавие : Parameters of the effective singlet-triplet model for band structure of high-T-c cuprates by alternative approaches
Разночтения заглавия :авие SCOPUS: Parameters of the effective singlet-triplet model for band structure of high-Tc cuprates by alternative approaches
Место публикации : J. Exp. Theor. Phys.: AMER INST PHYSICS, 2004. - Vol. 99, Is. 3. - P559-565. - ISSN 1063-7761, DOI 10.1134/1.1809685
Примечания : Cited References: 48
Предметные рубрики: DENSITY-FUNCTIONAL CALCULATION
TIGHT-BINDING METHOD
COPPER OXIDES
ENERGY-BANDS
SUPERCONDUCTORS
HOLE
LA2-XSRXCUO4
PLANE
SR2CUO2CL2
INSULATORS
Ключевые слова (''Своб.индексиров.''): band structure--carbon dioxide lasers--copper oxides--doping (additives)--parameter estimation--electron systems--generalized tight binding (gtb)--parameters extraction--singlet triplet model--technetium compounds
Аннотация: We consider the problem of determining the parameters for high-T-c superconducting copper oxides. Alternative approaches, the ab initio LDA and LDA + U calculations and the generalized tight-binding (GTB) method for strongly correlated electron systems, are used to calculate hopping and exchange parameters of the effective singlet-triplet model for the CuO2 layer. The resulting parameters are in remarkably good agreement with each other and with parameters extracted from experiment. This set of parameters is proposed for proper quantitative description of the physics of hole-doped high-T-c cuprates in the framework of effective models. (C) 2004 MAIK "Nauka / Interperiodica".
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