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    Аверьянов, Евгений Михайлович.
    Новые методы исследования ориентационного порядка одноосных молекулярных пленок на основе оптических данных / Е. М. Аверьянов // Жидк. кристаллы и их практич. использ. - 2020. - Т. 20, № 1. - С. 41-46 ; Liq. Cryst. Appl., DOI 10.18083/LCAppl.2020.1.41. - Библиогр.: 7 . - ISSN 1991-3966
   Перевод заглавия: New methods for studying the orientation order of uniaxial molecular films on the base of optical data
Кл.слова (ненормированные):
тонкие молекулярные пленки -- органические полупроводники -- PTCDA -- ориентационный порядок -- эффекты локального поля -- molecular thin films -- organic semiconductors -- PTCDA -- orientation order -- local-field effects
Аннотация: Установлена связь компонент ε(1,2)j(ω) диэлектрической функции εj(ω) = ε1j(ω) + iε2j(ω) для одноосной молекулярной пленки в области изолированной полосы поглощения света, поляризованного вдоль (j = ||) и нормально (j = ⊥) оптической оси пленки, с параметром ориентационного порядка S дипольных моментов молекулярных переходов, отвечающих данной полосе поглощения. Развиты новые методы определения S, подтвержденные для пленки органического полупроводника PTCDA нанометровой толщины с известными зависимостями ε(1,2)j(ω) в областях прозрачности и низкочастотного электронного поглощения. Показано влияние ориентационного порядка и анизотропии динамических диполь-дипольных межмолекулярных взаимодействий (эффектов локального поля) на положение максимумов полос ε2j(ω).
The components ε(1,2)j(ω) of the dielectric function εj(ω) = ε1j(ω) + iε2j(ω) for uniaxial molecular film in the region of an isolated absorption band of the light polarized along (j = ||) and across (j = ⊥) the film optical axis were considered. The connection of the components with the orientation order parameter S of the dipole moments of molecular transitions corresponding to a given absorption band was established. New methods for determining S are developed. They are confirmed for the organic semiconductor PTCDA film of nanoscale thickness with the known dependences ε(1,2)j(ω) in the transparency and low-frequency electron absorption regions. The effect of the orientation order and anisotropy of dynamic dipole-dipole intermolecular interactions (local-field effects) on the maxima position of the ε2j(ω) bands was shown.

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Институт физики им. Л. В. Киренского, ФИЦ КНЦ СО РАН, Академгородок, 50, строение № 38, 660036 Красноярск, Россия

Доп.точки доступа:
Aver'yanov, E. M.

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CoPt-Al2O3 nanocomposite films: synthesis, structure, and magnetic properties / V. S. Zhigalov, L. E. Bykova, V. G. Myagkov [et al.] // J. Surf. Ingestig. - 2020. - Vol. 14, Is. 1. - P. 47-53, DOI 10.1134/S102745102001022X. - Cited References: 29. - This study was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research projects no. 18-42-243009 r_mol_a and no. 19-43-240003 r_a, and the Foundation for Assistance to Small Innovative Enterprises in Science and Technology, contract no. 11843GU/2017, code 0033636, U.M.N.I.K. competition. . - ISSN 1027-4510. - ISSN 1819-7094

РУБ Physics, Condensed Matter
Рубрики:
SOLID-STATE SYNTHESIS
   GRANULAR THIN-FILMS
   THERMITE SYNTHESIS
   PHASE
Кл.слова (ненормированные):
thin films -- ferromagnetic nanocomposites -- CoPt alloy -- magnetic anisotropy
Аннотация: The structure and magnetic properties of CoPt–Al2O3 nanocomposite films synthesized by the annealing of Al/(Co3O4 + Pt) bilayers on a MgO(001) substrate at 650°C in vacuum are investigated. The synthesized composite films contain ferromagnetic CoPt grains with an average size of 25–45 nm enclosed in a nonconducting Al2O3 matrix. The saturation magnetization (Ms ~ 330 G) and coercivity (Hc ≈ 6 kOe) of the films are measured in the film plane and perpendicular to it. The obtained films are characterized by a spatial rotational magnetic anisotropy, which makes it possible to arbitrarily set the easy magnetization axis in the film plane or perpendicular to it using a magnetic field stronger than the coercivity (H ˃ Hc).

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Публикация на русском языке Нанокомпозитные пленки CoPt–Al2O3: синтез, структурные и магнитные свойства [Текст] / В. С. Жигалов, Л. Е. Быкова, В. Г. Мягков [и др.] // Поверхность. - 2020. - № 1. - С. 60-67

Держатели документа:
Russian Acad Sci, Siberian Branch, Krasnoyarsk Sci Ctr, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian State Univ Sci & Technol, Krasnoyarsk 660014, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Zhigalov, V. S.; Жигалов, Виктор Степанович; Bykova, L. E.; Быкова, Людмила Евгеньевна; Myagkov, V. G.; Мягков, Виктор Григорьевич; Pavlova, A. N.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Matsynin, A. A.; Мацынин, Алексей Александрович; Patrin, G. S.; Патрин, Геннадий Семёнович; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR); Government of Krasnoyarsk Territory; Krasnoyarsk Regional Fund of Science [18-42-243009 r_mol_a, 19-43-240003 r_a]; Foundation for Assistance to Small Innovative Enterprises in Science and Technology [11843GU/2017, 0033636]
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Altunin, R. R.
Structural phase transformations during a solid-state reaction in a bilayer Al/Fe thin-film nanosystem / R. R. Altunin, E. T. Moiseenko, S. M. Zharkov // Phys. Solid State. - 2020. - Vol. 62, Is. 1. - P. 200-205, DOI 10.1134/S1063783420010059. - Cited References: 36. - This study was supported by the Russian Foundation for Basic Research, project no. 18-03-01173a . - ISSN 1063-7834
Кл.слова (ненормированные):
thin films -- Al/Fe -- solid-state reaction -- phase formation -- electron diffraction
Аннотация: The processes of phase formation during a solid-state reaction between Fe and Al nanolayers have been investigated by the in situ electron diffraction method. It is established that the solid-state reaction at the interface between iron and aluminum nanolayers begins at ≈100°C with the formation of a disordered Al solid solution in α-Fe. It is shown that intermetallic phases (FeAl6 and/or Fe2Al5, FeAl, and Fe3Al) are successively formed upon further heating.

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Публикация на русском языке Алтунин Р. Р. Структурные фазовые превращения при твердофазной реакции в двухслойной тонкопленочной наносистеме Al/Fe [Текст] / Р. Р. Алтунин, Е. Т. Моисеенко, С. М. Жарков // Физ. тверд. тела. - 2020. - Т. 62 Вып. 1. - С. 158-163

Держатели документа:
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Kirensky Institute of Physics, Federal Research Center Krasnoyarsk Science Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Moiseenko, E. T.; Zharkov, S. M.; Жарков, Сергей Михайлович
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Magnetoresistive effect in the cobalt-doped bismuth ferrite films / O. B. Romanova, S. S. Aplesnin, M. N. Sitnikov [et al.] // J. Mater. Sci.: Mater. Electron. - 2020. - Vol. 31, Is. 10. - P. 7946-7952, DOI 10.1007/s10854-020-03333-7. - Cited References: 39 . - ISSN 0957-4522. - ISSN 1573-482X

РУБ Engineering, Electrical & Electronic + Materials Science, Multidisciplinary + Physics, Applied + Physics, Condensed Matter
Рубрики:
BIFEO3 THIN-FILMS
   ELECTRICAL-PROPERTIES
   COFE/CU MULTILAYERS
   GIANT MAGNETORESISTANCE
Аннотация: Bismuth ferrite films have been synthesized by the burst-mode deposition of the BiFe0.8Co0.2O3 solid solutions onto object glasses. The surface morphology of the BiFe0.8Co0.2O3 films has been examined. The effect of electron doping implemented by substitution of cobalt for iron in the BiFe0.8Co0.2O3 films on their magnetic, electrical, and galvanomagnetic properties has been investigated at temperatures of 77-600 K in magnetic fields of up to 12 kOe. The negative magnetoresistance has been observed, which changes its sign in the region of formation of magnetically heterogeneous states and attain its maximum value above room temperature. It has been established that the magnetoresistance is caused by the competition of electron hoppings and localization of electrons in a magnetic field. Using the Hall measurements, the carrier type has been determined. A model of the change in the curriers sign upon heating due to the shift of the chemical potential relative to the impurity subband has been proposed.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian State Univ Sci & Technol, Krasnoyarsk 660014, Russia.
Natl Acad Sci Belarus, Sci Pract Mat Res Ctr, Minsk 220072, BELARUS.

Доп.точки доступа:
Romanova, O. B.; Романова, Оксана Борисовна; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Sitnikov, M. N.; Udod, L. V.; Удод, Любовь Викторовна; Begisheva, O. B.; Demidenko, O. F.
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Altunin, R. R.
Effect of the structural properties on the electrical resistivity of the Al/Ag thin films during the solid-state reaction / R. R. Altunin, E. T. Moiseenko, S. M. Zharkov // Phys. Solid State. - 2020. - Vol. 62, Is. 4. - P. 708-713, DOI 10.1134/S1063783420040034. - Cited References: 43. - This study was supported by the Russian Science Foundation, project no. 18-13-00080. . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter
Рубрики:
LIGHT-EMITTING-DIODES
   PHASE-FORMATION
   AG
   AL
   DIFFUSION
   SUPPRESSION
   INTERFACE
   SURFACE
   GROWTH
   HEAT
Кл.слова (ненормированные):
thin films -- phase formation -- Al/Ag -- solid-state reaction; -- electron diffraction -- resistivity
Аннотация: Based on the results of in situ electron diffraction study of the solid-state reaction and electrical resistivity measurements on the Al/Ag thin films with an atomic ratio of Al : Ag = 1 : 3, the temperature of the reaction onset has been established and a model of the structural phase transitions has been proposed. The solid-state reaction begins at 70°C with the formation of the Al–Ag solid solution at the interface between the aluminum and silver nanolayers. It has been found that, in the course of the reaction, the intermetallic compounds γ-Ag2Al → μ-Ag3Al are successively formed. It is shown that the possibility of the formation of the μ‑Ag3Al phase during the solid-state reaction in the Al/Ag thin films depends on the aluminum-to-silver ratio, while the formation of the μ-Ag3Al phase begins only after all fcc aluminum has reacted.

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Публикация на русском языке Алтунин Р. Р. Влияние структурных свойств на электросопротивление тонких пленок Al/Ag в процессе твердофазной реакции [Текст] / Р. Р. Алтунин, Е. Т. Моисеенко, С. М. Жарков // Физ. тверд. тела. - 2020. - Т. 62 Вып. 4. - С. 621-626

Держатели документа:
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Moiseenko, E. T.; Zharkov, S. M.; Жарков, Сергей Михайлович; Russian Science FoundationRussian Science Foundation (RSF) [18-13-00080]
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    Аверьянов, Евгений Михайлович.
    Оптическая анизотропия и ориентационный порядок одноосных пленок сопряженных полимеров / Е. М. Аверьянов // Жидк. кристаллы и их практич. использ. - 2020. - Т. 20, № 1. - С. 53-63 ; Liq. Cryst. Appl., DOI 10.18083/LCAppl.2020.1.53. - Библиогр.: 14 . - ISSN 1991-3966
   Перевод заглавия: Optical anisotropy and orientation order of uniaxial films of conjugated polymers
Кл.слова (ненормированные):
сопряженные полимеры -- P3ОT -- анизотропные полимерные пленки -- ориентационный порядок -- эффекты локального поля -- conjugated polymers -- P3OT -- anisotropic polymer films -- orientation order -- local-field effects
Аннотация: Для одноосной пленки сопряженного полимера с макромолекулами в виде наборов субъединиц разной длины установлена связь компонент e(1,2)j(w) диэлектрической функции ej(w) = e1j(w) + ie2j(w) с параметром ориентационного порядка s дипольных моментов молекулярных переходов, отвечающих изолированной полосе поглощения света c поляризацией вдоль (j = || ) и нормально (j =^ ) оптической оси пленки. Новые методы определения s реализованы для пленки полимера P3OT с плоскостной ориентацией субъединиц и известными зависимостями e(1,2)j(w) в областях прозрачности и низкочастотного электронного поглощения. Учтена анизотропия компонент fj(w) = 1 + Lj[ej(w) - 1] тензора локального поля. Экспериментальные значения компонент Lj тензора Лорентца для пленки P3OT определены с использованием зависимостей e1j(w) в видимой области прозрачности. Показано совместное влияние длины и ориентационного порядка субъединиц, а также динамических диполь-дипольных взаимодействий между субъединицами (эффектов локального поля) на положение максимумов полос e2j(w).
The uniaxial film of conjugated polymer with macromolecules as a set of subunits of different lengths was studied. For this film, the connection between the components e(1,2)j(w) of the dielectric function ej(w) = e1j(w) + ie2j(w) and the orientation order parameter s was established. The orientation order parameter s of the dipole moments of molecular transitions corresponds to an isolated absorption band of light with polarization along (j = ||) and across (j =^)the optical axis of the film. New methods have been implemented for determining s of the P3OT polymer film. The P3OT polymer film is characterized by a planar orientation of subunits and known dependences e(1,2)j(w) in the regions of transparency and low-frequency electron absorption. The anisotropy of the components fj(w) = 1 + Lj[ej(w) - 1] of the local-field tensor was taken into account. The experimental values of the components Lj of the Lorentz tensor for the P3OT film were determined using the dependences e1j(w) in the visible transparency region. The combined effect of the length and orientation order of the subunits, as well as dynamic dipole-dipole interactions between subunits (local-field effects) on the position of the maxima of the e2j(w) bands was shown.

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Держатели документа:
Институт физики им. Л. В. Киренского, ФИЦ КНЦ СО РАН, Академгородок, д. 50, строение № 38, 660036 Красноярск, Россия

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Aver'yanov, E. M.

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The structure, electrical and magnetoresistance properties of heterogeneous films [In2O3/(Co40Fe40B20)34(SiO2)66]92 / M. N. Volochaev, O. V. Zhilova, S. Yu. Pankov [et al.] // AIP Conf. Proc. - 2019. - Vol. 2174: 6th International Young Researchers' Conference on Physics, Technologies and Innovation, PTI 2019 (20-23 May 2019) Conference code: 155607. - Ст. 020274, DOI 10.1063/1.5134425. - Cited References: 11. - This work was supported by the Ministry of Education and Science of the Russian Federation as the project part of the state task (No 3.1867.2017/4.6)
Аннотация: The [In2O3/(Co40Fe40B20)34(SiO2)66]92 thin films were obtained by ion beam sputtering. X-ray and TEM studies of the structure and phase composition showed that the [In2O3/(Co40Fe40B20)34(SiO2)66]92 films characterized by multilayer structure, where (Co40Fe40B20)34(SiO2)66 nanocomposite layers and In2O3 spacers are amourphous. It is shown that the introduction of In2O3 spacers in (Co40Fe40B20)34(SiO2)66 nanocomposite leads to decreasing in specific resistance due to creation continues conductivity layers of low-resistance In2O3. All investigated samples characterized by the presence of magnetoresistance both at 77 K and at room temperature, which is characteristic of ferromagnetic metal-dielectric nanocomposites.

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Держатели документа:
Kirensky Institute of Physics FRC KSC SB RAS, 50, Krasnoyarsk660036, Russian Federation
Department of Solid State Physics, Voronezh State Technical University, Voronezh, 394026, Russian Federation

Доп.точки доступа:
Volochaev, M. N.; Волочаев, Михаил Николаевич; Zhilova, O. V.; Pankov, S. Yu.; Sitnikov, A. V.; Makagonov, V. A.; Babkina, I. V.; International Young Researchers' Conference on Physics, Technologies and Innovation(6th ; 20-23 May 2019 ; Ekaterinburg, Russian Federation)
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Spectral dependences of transmittance and polarizing ability of stretched PDLC films with homogeneous and inhomogeneous interface anchoring / M. N. Krakhalev [et al.] // EuroDisplay 2019 : book of abstracts of International conference. - 2019. - Ст. O-9. - P. 25. - Cited References: 2

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Доп.точки доступа:
Loiko, V. A.; Лойко В. А.; Zyryanov, V. Ya.; Зырянов, Виктор Яковлевич; Konkolovich, A. V.; Конколович А. В. ; Miskevich, A. A.; Мискевич А. А.; Prishchepa, O. O.; Прищепа, Оксана Олеговна; Shabanov, A. V.; Шабанов, Александр Васильевич; Krakhalev, M. N.; Крахалев, Михаил Николаевич; EuroDisplay international conference(2019 ; Sept. ; 16-20 ; Minsk, Belarus); Society for Information Displays; Белорусский государственный университет информатики и радиоэлектроники
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Electro-optical response of PDLC films with conical boundary conditions / M. N. Krakhalev [et al.] // EuroDisplay 2019 : book of abstracts of International conference. - 2019. - Ст. O-31. - P. 63. - Cited References: 3

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Доп.точки доступа:
Krakhalev, M. N.; Крахалев, Михаил Николаевич; Prishchepa, O. O.; Прищепа, Оксана Олеговна; Feyzer, K. A.; Sutormin, V. S.; Сутормин, Виталий Сергеевич; Loiko, V. A.; Лойко В. А.; Konkolovich, A. V.; Конколович А. В. ; Miskevich, A. A.; Мискевич А. А.; Zyryanov, V. Ya.; Зырянов, Виктор Яковлевич; EuroDisplay international conference(2019 ; Sept. ; 16-20 ; Minsk, Belarus); Society for Information Displays; Белорусский государственный университет информатики и радиоэлектроники
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10.

Synthesis and transport properties of FET based on Heusler alloy thin films formed by rapid thermal annealing / A. V. Lukyanenko [et al.] // J. Phys.: Conf. Ser. - 2019. - Vol. 1410. - Ст. 012017, DOI 10.1088/1742-6596/1410/1/012017. - Cited References: 10. - This study was supported by the Russian Foundation for Basic Research, project no. 17-02-00302 and supported in part by the Ministry of Education and Science of the Russian Federation and the Siberian Branch of the Russian Academy of Sciences, project II.8.70, and the Presidium of the Russian Academy of Sciences, Fundamental Research Program no. 32 «Nanostructures: Physics, Chemistry, Biology, Basics of Technologies». . - ISSN 1742-6588. - ISSN 1742-6596

РУБ Crystal growth and structural properties of semiconductor materials and nanostructures

Аннотация: In this work we show a preparation technique of Co2FeSi full-Heusler alloy thin films on silicon-on-insulator (SOI) substrates, employing rapid thermal annealing (RTA). The films of the Co2FeSi alloy were formed by a silicidation reaction, caused by RTA, between the ultrathin SOI (001) layer and the Fe/Co layers deposited on it. It is assumed that this technology is compatible with the process of formation of a half-metal source-drain in an advanced CMOS and SOI technology and will be applicable for the manufacture of a source-drain of a field-effect transistor. Schottky barrier field-effect transistors (FET) with a back-gate, based on silicon nanowires with source and drain of a Co2FeSi film, synthesized on an SOI substrate, were manufactured. The transport properties of the device were investigated.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk 660036, Russia
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk 660041, Russia
Reshetnev Siberian State University of Science and Technology, Krasnoyarsk 660037, Russia

Доп.точки доступа:
Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Tarasov, A. S.; Тарасов, Антон Сергеевич; Shanidze, L. V.; Шанидзе, Лев Викторович; Yakovlev, I. A.; Яковлев, Иван Александрович; Zelenov, F. V.; Зеленов, Ф. В.; Masugin, A. N.; Масюгин, Альберт Николаевич; Ivanov, A. B.; Иванов, А. Б.; Baron, F. A.; Барон, Филипп Алексеевич; Volkov, N. V.; Волков, Никита Валентинович; International School and Conference on optoelectronics, photonics, engineering and nanostructures(6 ; 2019 ; 22-25 April ; Saint Petersburg)
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11.

    Moiseenko, E. T.
    In situ electron diffraction and resistivity characterization of solid state reaction process in Cu/Al bilayer thin films / E. T. Moiseenko, R. R. Altunin, S. M. Zharkov // Metall. Mat. Trans. A. - 2020. - Vol. 51, Is. 3. - P. 1428-1436, DOI 10.1007/s11661-019-05602-5. - Cited References: 52. - The authors wish to thank the financial support from the Russian Science Foundation (Grant #18-13-00080) . - ISSN 1073-5623
   Перевод заглавия: In situ исследования процесса твердофазной реакции в двухслойных тонких пленках Cu/Al методами дифракции электронов и изменения электросопротивления
Кл.слова (ненормированные):
Aluminum alloys -- Binary alloys -- Crystallites -- Electric conductivity -- Electron diffraction -- Intermetallics -- Solid state reactions -- Thin films
Аннотация: Solid state reaction processes in Cu/Al thin films have been studied using the methods of in situ electron diffraction and electrical resistivity measurements. The solid state reaction in the Cu/Al thin films has been found to begin already at 88 °C with the formation of the Al2Cu phase in the process of thermal heating in vacuum. The phase sequence at the solid state reaction in the films under study has been determined to be the following: Al2Cu → AlCu → Al4Cu9. A model has been suggested for describing the initial formation stage of intermetallic compounds at the solid state reaction in Cu/Al thin films. According to this model, at the initial stage, the intermetallic compounds are formed as separate crystallites at the interface in the Cu/Al thin films. The suggested model can be applied both to the formation of the first phase, Al2Cu, and to the subsequent phases: AlCu and Al4Cu9. For the Al4Cu9 phase the temperature coefficient of the electrical resistivity has been determined to be equal to αAl4Cu9= 1.1 × 10−3 K−1.

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Siberian Federal University, 79 Svobodny pr., Krasnoyarsk, 660041, Russian Federation
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Akademgorodok 50/38, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Altunin, R. R.; Zharkov, S. M.; Жарков, Сергей Михайлович
}
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12.

Inhomogeneity of magnetic states in polycrystalline Sr doped PrMnO3 films / Yu. E. Samoshkina, M. V. Rautskii, D. S. Neznakhin [et al.] // Euro-asian symposium "Trends in magnetism" (EASTMAG-2019) : Book of abstracts / чл. конс. ком.: S. G. Ovchinnikov, N. V. Volkov [et al.] ; чл. прогр. ком. D. M. Dzebisashvili [et al.]. - 2019. - Vol. 2. - Ст. H.P10. - P. 88-89. - Cited References: 3 . - ISBN 978-5-9500855-7-4

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia
Ural Federal University n.a. the first President of Russia B.N. Yeltsin
National Research Technological University “MISiS”

Доп.точки доступа:
Ovchinnikov, S. G. \чл. конс. ком.\; Овчинников, Сергей Геннадьевич; Volkov, N. V. \чл. конс. ком.\; Волков, Никита Валентинович; Dzebisashvili, D. M. \чл. прогр. ком.\; Дзебисашвили, Дмитрий Михайлович; Samoshkina, Yu. E.; Самошкина, Юлия Эрнестовна; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Neznakhin, D. S.; Stepanova, E. A.; Andreev, N.; Chichkov, V. I.; Чичков В. И.; Российская академия наук; Уральское отделение РАН; Институт физики металлов им. М. Н. Михеева Уральского отделения РАН; Уральский федеральный университет им. первого Президента России Б.Н. Ельцина; Российский фонд фундаментальных исследований; Euro-Asian Symposium "Trends in MAGnetism"(7 ; 2019 ; Sept. ; 8-13 ; Ekaterinburg); "Trends in MAGnetism", Euro-Asian Symposium(7 ; 2019 ; Sept. ; 8-13 ; Ekaterinburg)
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13.

    Nanocomposite FeCo films based on arabinogalactan: synthesis and magnetic properties / L. A. Chekanova [et al.] // Euro-asian symposium "Trends in magnetism" (EASTMAG-2019) : Book of abstracts / чл. конс. ком.: S. G. Ovchinnikov, N. V. Volkov [et al.] ; чл. прогр. ком. D. M. Dzebisashvili [et al.]. - 2019. - Vol. 2. - Ст. J.P36. - P. 250-251. - Cited References: 5. - This work was supported by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project No. 18-42-240006 . - ISBN 978-5-9500855-7-4
   Перевод заглавия: Нанокомпозитные FeCo пленки на основе арабиногалактана: синтез и магнитные свойства

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia
Federal Research Center KSC SB RAS, Krasnoyarsk, Russia
Siberian Federal University, Krasnoyarsk, Russia

Доп.точки доступа:
Ovchinnikov, S. G. \чл. конс. ком.\; Овчинников, Сергей Геннадьевич; Volkov, N. V. \чл. конс. ком.\; Волков, Никита Валентинович; Dzebisashvili, D. M. \чл. прогр. ком.\; Дзебисашвили, Дмитрий Михайлович; Chekanova, L. A.; Чеканова, Лидия Александровна; Denisova, E. A.; Денисова, Елена Александровна; Komogortsev, S. V.; Комогорцев, Сергей Викторович; Iskhakov, R. S.; Исхаков, Рауф Садыкович; Nemtsev, I. V.; Немцев, Иван Васильевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Российская академия наук; Уральское отделение РАН; Институт физики металлов им. М. Н. Михеева Уральского отделения РАН; Уральский федеральный университет им. первого Президента России Б.Н. Ельцина; Российский фонд фундаментальных исследований; Euro-Asian Symposium "Trends in MAGnetism"(7 ; 2019 ; Sept. ; 8-13 ; Ekaterinburg); "Trends in MAGnetism", Euro-Asian Symposium(7 ; 2019 ; Sept. ; 8-13 ; Ekaterinburg)
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14.

Tarasov, I. A.
α-FeSi2 as a buffer layer for β-FeSi2 growth: analysis of orientation relationships in silicide/Silicon, silicide/silicide heterointerfaces / I. A. Tarasov, I. A. Bondarev, A. I. Romanenko // J. Surf. Ingestig. - 2020. - Vol. 14, Is. 4. - P. 851-861, DOI 10.1134/S1027451020040357. - Cited References: 74. - The work was supported by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research project no. 18-42-243013. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70) . - ISSN 1027-4510. - ISSN 1819-7094

РУБ Physics, Condensed Matter
Рубрики:
β-FeSi2 thin-films
Thermal-expansion
Phase-transformation
Кл.слова (ненормированные):
iron silicide -- interface structure -- orientation relationship -- near coincidence site lattice -- edge-to-edge matching -- plane-to-plane matching
Аннотация: In this manuscript, we attempt to clarify the capability of utilisation of α-FeSi2 nanocrystals as a buffer layer for growth of monocrystalline/high-quality β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Iron silicides-based nanostructures have a wide spectrum of possible industrial applications in different fields. Mainly, interest in these functional materials is caused by their ecological safety and Earth’s core abundance that give us the opportunity for greener future with highly effective electronic devices. β-FeSi2 phase due to its allowed direct transition with energy close to 0.87 eV can be used as active material in light emission diodes (LED). Utilisation of buffer layers between silicon substrate and give one more tool to engineer the band structure of semiconducting β‑FeSi2 phase. We attempt to clarify the capability of the utilisation of the α-FeSi2 phase as a buffer layer for the growth of β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Possible β-FeSi2/α-,γ-,s-FeSi2/Si orientation relationships (ORs) and habit planes were examined with crystallogeometrical approaches and compared with β-FeSi2/Si ones. The lowest interplanar and interatomic spacing misfits between silicon lattice and a silicide one are observed for the pair of s-FeSi2{011}[200]/Si{022}[100] at room temperature and equal to –0.57%. The least interplanar and interatomic spacing misfit of 1.7 and 1.88%, respectively, for β-FeSi2/Si, can be decreased as low as –0.67 (interplanar) and 0.87 (interatomic) % by placing an α-FeSi2 layer between silicon and β-FeSi2 phase. It is stated that the growth of metastable γ-FeSi2 is also favourable on silicon due to low interplanar and interatomic spacing misfit (–0.77%) and a higher density of NCS in comparison with s-FeSi2. Design and technological procedure for the synthesis of possible β-FeSi2/α-FeSi2/Si heterostructure have been proposed based on the results obtained.

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Держатели документа:
RAS, Kirensky Inst Phys, Fed Res Ctr, KSC,SB, Krasnoyarsk 660036, Russia.
RAS, Nikolaev Inst Inorgan Chem, SB, Novosibirsk 630090, Russia.

Доп.точки доступа:
Bondarev, I. A.; Бондарев, Илья Александрович; Romanenko, A. I.; Тарасов, Иван Анатольевич; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science [18-42-243013]; Ministry of Education and Science of the Russian FederationMinistry of Education and Science, Russian Federation; Siberian Branch of the Russian Academy of SciencesRussian Academy of Sciences [II.8.70]
}
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15.

    Structural changes of Co caused a change of the solution pH during chemical deposition / S. A. Podorozhnyak, A. V. Chzhant, V. K. Maltsevt [et al.] // J. Sib. Fed. Univ. Math. Phys. - 2020. - Vol. 13, Is. 4. - P. 451-458 ; Журн. СФУ. Матем. и физика, DOI 10.17516/1997-1397-2020-13-4-451-458. - Cited References: 10 . - ISSN 1997-1397. - ISSN 2313-6022
   Перевод заглавия: Структурные изменения кобальта, вызванные изменением pH при химическом осаждении

РУБ Mathematics
Рубрики:
COBALT
MICROSTRUCTURE
Кл.слова (ненормированные):
Co-P films -- chemical reduction of metals -- induced magnetic anisotropy -- nanocrystalline material -- пленки Co-P -- химическое восстановление металлов -- наведенная магнитная анизотропия -- нанокристаллический материал
Аннотация: The phase transformations of the Co lattice are discussed, which determine the anomalous changes in the magnetic properties of chemically deposited Co-P films obtained at various pH values. The coercivity of the H-c films obtained at low pH values exceeds 1 kOe and decreases to several units Oe in the films obtained at high pH values. It is shown that the observed changes in the magnetic properties of Co-P films are caused by the transition of the cobalt crystal lattice to the nanocrystalline state.
Обсуждаются фазовые превращения решетки Co, которые определяют аномальные изменения магнитных свойств химически осажденных пленок Co-P, полученных при различных значениях pH. Коэрцитивная сила пленок, полученных при низких значениях pH, превышает 1 кЭ и снижается до нескольких единиц Э в пленках, полученных при высоких значениях pH. Показано, что наблюдаемые изменения магнитных свойств пленок Co-P вызваны переходом кристаллической решетки кобальта в нанокристаллическое состояние.

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Держатели документа:
Siberian Fed Univ, Krasnoyarsk, Russia.
Krasnoyarsk State Agr Univ, Krasnoyarsk, Russia.
RAS, Kirensky Inst Phys FIC KNC SB, Krasnoyarsk, Russia.

Доп.точки доступа:
Podorozhnyak, Sergey A.; Chzhant, Anatoly, V; Maltsevt, Vadim K.; Krayuhin, Ivan N.; Patrin, G. S.; Патрин, Геннадий Семёнович; Sakash, Irina Yu

}
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16.

    Magnetic and structure properties of CoPt-In2O3 nanocomposite films / L. E. Bykova, V. G. Myagkov, V. S. Zhigalov [et al.] // J. Sib. Fed. Univ. Math. Phys. - 2020. - Vol. 13, Is. 4. - P. 431-438 ; Журн. СФУ. Матем. и физика, DOI 10.17516/1997-1397-2020-13-4-431-438. - Cited References: 29. - This study was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research projects no. 19-43-240003 . - ISSN 1997-1397. - ISSN 2313-6022
   Перевод заглавия: Магнитные и структурные свойства нанокомпозитных пленок CoPt-In2O3

РУБ Mathematics
Рубрики:
THIN-FILMS
TEMPERATURE
PHASE
Кл.слова (ненормированные):
thin films -- ferromagnetic nanocomposites -- CoPt alloy -- In2O3 oxide -- тонкие пленки -- ферромагнитные нанокомпозиты -- сплав CoPt -- оксид In2O3
Аннотация: The structural and magnetic properties of CoPt-In2O3 nanocomposite films formed by vacuum annealing of the In/(Co3O4 + Pt)/MgO film system in the temperature range of 100–800 °C have been investigated. The synthesized nanocomposite films contain ferromagnetic CoPt grains with an average size of 5nm enclosed in an In2O3 matrix, and have a magnetization of 600 emu/cm3, and a coercivity of 150 Oe at room temperature. The initiation 200 °C and finishing 800 °C temperatures of synthesis were determined, as well as the change in the phase composition of the In/(Co3O4 + Pt)/MgO film during vacuum annealing.
Исследованы структурные и магнитные свойства нанокомпозитных пленок CoPt- In2O3, полученных вакуумным отжигом пленочной системы In/(Co3O4 + Pt)/MgO в интервале температур 100 – 800 °C. Синтезированные нанокомпозитные пленки содержали ферромагнитные CoPt-кластеры со средним размером 5 nm, заключенные в матрицу In2O3, и имели намагниченность 600 emu/cm3, коэрцитивную силу 150 Oe при комнатной температуре. Определены температуры начала 200 °C и окончания 800 °C синтеза, а также изменение фазового состава пленки In/(Co3O4 + Pt)/MgO при вакуумном отжиге.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk, Russia.
Fed Res Ctr KSC SB RAS, Inst Chem & Chem Technol, Krasnoyarsk, Russia.
Siberian Fed Univ, Krasnoyarsk, Russia.

Доп.точки доступа:
Bykova, L. E.; Быкова, Людмила Евгеньевна; Myagkov, V. G.; Мягков, Виктор Григорьевич; Zhigalov, V. S.; Жигалов, Виктор Степанович; Matsynin, A. A.; Мацынин, Алексей Александрович; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Bondarenko, G. N.; Patrin, G. S.; Патрин, Геннадий Семёнович; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory [19-43-240003]

}
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17.

Unit for measuring the magnetic characteristics of thin ferromagnetic films / S. Kleshnina, B. Belyaev, N. Boev [et al.] // Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2020 : proceedings. - 2020. - Ст. 9117609. - P. 326-329, DOI 10.1109/USBEREIT48449.2020.9117609. - Cited References: 7. - This work was supported by the Ministry of Education and Science of 075 11 2019-054
Кл.слова (ненормированные):
thin magnetic films -- measuring unit -- magnetic characteristics -- ferromagnetic resonance
Аннотация: Studying the properties of ferromagnetic films helps in solving the fundamental problems of the physics of magnetic phenomena and in developing the theory of ferromagnetism. Modern software and hardware, along with reliable diagnostic methods are used to research and design thin-film devices. In this regard, the development of devices and methods for measuring the magnetic characteristics of thin ferromagnetic films is an essential task. The aim of the work is to develop an unit for local measurements of the magnetic characteristics of thin ferromagnetic films, which has the ability to change the degree of locality of measurements over a wide range and has high sensitivity at the same time. The article reviews a new unit for measuring the magnetic characteristics of thin ferromagnetic films. The unit allows measuring the value and direction of the anisotropy field on a local area of the film. A block diagram and description of a new unit, as well as methods of measurements are shown in the article. The experimentally obtained distribution of the anisotropy field over the area of the studied sample of Ni 80 Fe 20 film is shown in this work. The experimental results confirm the compliance of the new unit with the declared characteristics. The unit can be used for non-destructive quality control and for measuring uniformity of thin ferromagnetic films magnetic characteristics.

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Держатели документа:
Laboratory of Electrodynamics and Microwave Electronics, Kirensky Institute of Physics, Krasnoyarsk, Russian Federation
Institute of Engineering Physics and Radioelectronics, Siberian Federal University, Krasnoyarsk, Russia

Доп.точки доступа:
Kleshnina, S. A.; Клешнина, Софья Андреевна; Belyaev, B. A.; Беляев, Борис Афанасьевич; Boev, N. M.; Боев, Никита Михайлович; Izotov, A. V.; Изотов, Андрей Викторович; Burmitskikh, A. V.; Бурмитских, Антон Владимирович; Gorchakovsky, A.; Горчаковский, Александр Антонович; Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology(2020 ; 14-15 May ; Yekaterinburg, Russia); Institute of Electrical and Electronics Engineers
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18.

Measuring the imaginary part of the complex magnetic permeability of thin films using resonant and non-resonant automated measuring systems / A. V. Burmitskikh, B. A. Belyaev, N. M. Boev, S. A. Kleshnina // Proceedings - 2020 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2020 : Institute of Electrical and Electronics Engineers, 2020. - Ст. 9117770. - P. 265-268, DOI 10.1109/USBEREIT48449.2020.9117770. - Cited References: 14. - The reported study was funded by RFBR, project number 19-32-90066\19
Кл.слова (ненормированные):
thin magnetic films -- magnetic permeability -- ferromagnetic resonance
Аннотация: This paper considers resonant and non-resonant methods for measuring magnetic characteristics of Ni 80 Fe 20 thin films with 1000 Å thickness. The imaginary part of complex magnetic permeability was measured by using resonant and nonresonant measuring cells. The resonant measuring cell included: a micro-strip line, a lumped capacitance, and an amplitude detector. The non-resonant measuring cell included a short-circuited micro-strip line. The studied sample of thin magnetic film is placed under the short-circuited micro-strip line. The self-resonant frequency of the non-resonant measuring cell is higher than frequency of the ferromagnetic resonance (in field, equal 14 Oersteds). Ferromagnetic resonance method was used to study the change of measuring cell resonant frequency. The angular dependences of resonant frequency were achieved by the change of angle between constant magnetic field and high-frequency field of excitation, the hard axis of magnetization in thin magnetic film. The measurements were carried out using automation units. A numerical comparison of the obtained results showed that the difference between measurements does not exceed 5%.

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Держатели документа:
Laboratory of Electrodynamics and Microwave Electronics, Kirensky Institute of Physics, Krasnoyarsk, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Burmitskikh, A. V.; Бурмитских, Антон Владимирович; Belyaev, B. A.; Беляев, Борис Афанасьевич; Boev, N. M.; Боев, Никита Михайлович; Kleshnina, S. A.; Клешнина, Софья Андреевна; Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology(2020 ;14-15 May ; Yekaterinburg, Russia)
}
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19.

    Microwave giant magnetoresistance and ferromagnetic and spin-wave resonances in (CoFe)/Cu nanostructures / V. V. Ustinov, A. B. Rinkevich, I. G. Vazhenina, M. A. Milyaev // J. Exp. Theor. Phys. - 2020. - Vol. 131, Is. 1. - P. 139-148, DOI 10.1134/S1063776120070171. - Cited References: 51. - This work was performed in terms of project Spin no. AAAA-A18-118020290104-2 and project Function no. AAAA-A19-119012990095-0. Section 3 was supported by the Russian Science Foundation, project no. 17-1201002 . - ISSN 1063-7761. - ISSN 1090-6509
Рубрики:
COFE/CU SUPERLATTICES
   MAGNETIC MULTILAYERS
   CO/CU MULTILAYERS
   FILMS
Аннотация: The microwave phenomena that occur in magnetic multilayer (CoFe)/Cu nanostructures, which have a giant magnetoresistance, are studied. The transmission of waves through a nanostructure is used to investigate the microwave giant magnetoresistance effect. The changes in the transmission coefficient at frequencies of 29–38 GHz are found to exceed the relative magnetoresistance, which distinguishes the system under study from the nanostructures studied earlier. Ferromagnetic and spin-wave resonances are used to study the angular dependences of the microwave absorption spectra of a multilayer (CoFe/Cu)n nanostructure. The following parameters are determined: the critical angle that determines the boundaries of the ranges of excitation of uniform and nonuniform spin modes, the type of boundary conditions describing the pinning of spins on the outer nanostructure surfaces, and the surface anisotropy and exchange interaction constants.

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Публикация на русском языке Микроволновой гигантский магниторезистивный эффект, ферромагнитный и спин-волновой резонансы в наноструктурах (CoFe)/Cu [Текст] / В. В. Устинов, А. Б. Ринкевич, И. Г. Важенина, М. А. Миляев // Журн. эксперим. и теор. физ. - 2020. - Т. 158 Вып. 1. - С. 139-150

Держатели документа:
Russian Acad Sci, Inst Met Phys, Ural Div, Ekaterinburg 620108, Russia.
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Ustinov, V. V.; Rinkevich, A. B.; Vazhenina, I. G.; Важенина, Ирина Георгиевна; Milyaev, M. A.; Russian Science FoundationRussian Science Foundation (RSF) [AAAA-A18-118020290104-2, AAAA-A19-119012990095-0]; [17-1201002]
}
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20.

Reversal of uniaxial magnetic anisotropy in Fe/GaAs (110) films driven by surface relaxation: An in situ ferromagnetic resonance study / B. Bhagat, A. Semisalova, R. Meckenstock, M. Farle // AIP Adv. - 2020. - Vol. 10, Is. 7. - Ст. 075219, DOI 10.1063/5.0004261. - Cited References: 32. - This work was supported by Deutsche Forschungsgemeinschaft (DFG, German Research Foundation): Project Nos. RO 5030/2-1 and 405553726-TRR 270, and by the Government of the Russian Federation (Research Grant No. 075-15-2019-1886). The authors acknowledge Florian Romer for initial funding and training and are thankful to Benjamin Zingsem for helping in data fitting and to Ulf Wiedwald for AFM measurements. . - ISSN 2158-3226

РУБ Nanoscience & Nanotechnology + Materials Science, Multidisciplinary
Рубрики:
EPITAXIAL FE FILMS
   GAAS(001)
   GAAS
   RECONSTRUCTION
   LAYERS
Аннотация: We report an in situ study of the time evolution of magnetic anisotropy constants of an uncapped 4 nm [~ 27 monolayers (ML)] Fe film epitaxially grown on a GaAs (110) substrate at room temperature under ultra-high vacuum (UHV) conditions. The structural and chemical properties are monitored by low energy electron diffraction and Auger spectroscopy with a sensitivity of 0.01 ML. The in situ UHV ferromagnetic resonance (FMR) study over a period of 6 days in 10-9 Pa reveals that there is a slow magneto-morphological transition of the Fe film surface at room temperature. The resonance field measured in situ in the [110] direction initially changes at a rate of 0.3 mT/h within 30 h after deposition and later at 0.1 mT/h over 80 h. We determine the time-dependent changes in the in-plane and out-of-plane anisotropy constants and find a sign change in the uniaxial in-plane anisotropy in the first 24 h due to morphological changes at the surface. The in situ FMR measurements and the Auger analysis allow us to exclude changes in the magnetization and anisotropy due to the contamination and oxidation of the Fe film.

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Держатели документа:
Univ Duisburg Esssen, Ctr Nanointegrat, D-47057 Duisburg, Germany.
Univ Duisburg Esssen, Fac Phys, D-47057 Duisburg, Germany.
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Bhagat, Babli; Semisalova, Anna; Meckenstock, Ralf; Farle, M.; Фарле, Михаель; Deutsche Forschungsgemeinschaft (DFG, German Research Foundation)German Research Foundation (DFG) [RO 5030/2-1, 405553726-TRR 270]; Government of the Russian Federation [075-15-2019-1886]
}
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