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    Кошелев, А. А.
    Исследование процессов эпитаксиального роста германия на поверхности Fe3Si/Si(111) / А. А. Кошелев, И. А. Яковлев, С. Н. Варнаков. - Электрон. текстовые дан. // Решетневские чтения : материалы XXVII Междунар. науч.-практич. конф., посв. памяти генер. констр. ракетно-космич. систем акад. М. Ф. Решетнева : в 2-х ч. - 2023. - Ч. 1, Секция : Наноматериалы, нанотехнологии и информационные системы в аэрокосмической отрасли. - С. 591-593. - Библиогр.: 6
   Перевод заглавия: Investigation of the epitaxial growth processes of germanium on the Fe3Si/Si(111) surface

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Держатели документа:
Институт физики им. Л.В. Киренского СО РАН
Сибирский федеральный университет

Доп.точки доступа:
Яковлев, Иван Александрович; Yakovlev, I. A.; Варнаков, Сергей Николаевич; Varnakov, S. N.; "Решетневские чтения", международная научно-практическая конференция(27 ; 2023 ; нояб. ; 8-10 ; Красноярск); Сибирский государственный университет науки и технологий им. акад. М. Ф. Решетнева; Информационные спутниковые системы им. М.Ф. Решетнева, ОАО; "Красноярский машиностроительный завод", ОАОФедеральный исследовательский центр "Красноярский научный центр Сибирского отделения Российской академии наук"
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Zharkov, S. M.
Electron-beam-initiated crystallization of iron-carbon films / S. M. Zharkov, L. I. Kveglis // Phys. Solid State. - 2004. - Vol. 46, Is. 5. - P. 969-974, DOI 10.1134/1.1744977. - Cited References: 34 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
AMORPHOUS-GERMANIUM FILMS
   EXPLOSIVE CRYSTALLIZATION
   PATTERN-FORMATION
   TEMPERATURE
   MICROSCOPY
   MECHANISM
Аннотация: A structure formed in nanocrystalline iron-carbon films exposed to an electron beam was studied. Explosive crystallization (EC) with the formation of dendrite and cellular-dendritic instabilities at a rate of up to 1 cm/s was observed. It was shown that the dependence between the growth rate of dendrite branches (or cells) during EC and the rounding radius of dendrite branch tips can be approximately described by equations used to calculate the crystal growth in supercooled melts. To explain the EC mechanism, a model of a liquid zone formed at the crystallization front was used. It was shown that the liquid zone arises due to energy accumulated in the film in the nanocrystalline state. It was assumed that this energy was accumulated due to the energy of elastic stresses. (C) 2004 MAIK "Nauka / Interperiodica".

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Держатели документа:
Russian Acad Sci, Siberian Div, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Kveglis, L. I.; Жарков, Сергей Михайлович
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Possibilities of controlling the quantum states of hole qubits in an ultrathin germanium layer using a magnetic substrate: Results from ab initio calculations / A. N. Chibisov, M. A. Chibisova, A. V. Prokhorenko [et al.] // Nanomaterials. - 2023. - Vol. 13, Is. 23. - Ст. 3070, DOI 10.3390/nano13233070. - Cited References: 36. - This work was supported by the Russian Science Foundation of the Russian Federation (project No. 22-23-01186). The authors would like to thank them for providing access to the HPC cluster at the Center for Shared Use of Scientific Equipment and the Center for Processing and Storage of Scientific Data of the Far Eastern Branch of the Russian Academy of Sciences and the Joint Supercomputer Center of the Russian Academy of Sciences (JSCC RAS) . - ISSN 2079-4991
Кл.слова (ненормированные):
density functional theory -- quantum state -- hole qubit -- electronic structure -- electric field
Аннотация: Using density functional theory in the noncollinear approximation, the behavior of quantum states of hole qubits in a Ge/Co:ZnO system was studied in this work. A detailed analysis of the electronic structure and the distribution of total charge density and hole states was carried out. It was shown that in the presence of holes, the energetically more favorable quantum state is the state |0˃, in contrast to the state |1˃ when there is no hole in the system. The favorability of hole states was found to be dependent on the polarity of the applied electric field.

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Держатели документа:
Computing Center, Far Eastern Branch of the Russian Academy of Sciences, Khabarovsk 680000, Russia
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk 660036, Russia
Laboratory of Chemical Engineering Thermodynamics, Department of Chemical Engineering, Tsinghua University, Beijing 100084, China

Доп.точки доступа:
Chibisov, Andrey N.; Chibisova, Mary A.; Prokhorenko, Anastasiia V.; Obrazcov, Kirill V.; Fedorov, A. S.; Федоров, Александр Семенович; Yu, Yang-Xin
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Peculiarities of magnetic properties of Ni-Ge layered films / A. V. Chernichenko [et al.] // TRENDS IN MAGNETISM. - 2011. - Vol. 168-169. - P261-264, DOI 10.4028/www.scientific.net/SSP.168-169.261 . - ISSN 1012-0394
Кл.слова (ненормированные):
exchange bias effect -- magnetic properties -- ni and ge mutual diffusion -- ni-ge layer structures -- surface morphology -- antiferromagnetism -- diffusion -- germanium -- magnetic properties -- magnetization -- morphology -- phase interfaces -- solids -- germanium -- magnetic properties -- magnetization -- nickel -- surface morphology -- temperature distribution -- antiferromagnetic phase -- exchange bias effects -- ge films -- layered films -- low temperatures -- magnetization temperature -- mutual diffusion -- ni and ge mutual diffusion -- ni-ge layer structures -- ge layers -- surface morphology -- magnetism
Аннотация: The surface morphology and magnetic properties of layered Ni-Ge films were investigated. The films surface has been shown to consist of the grains of 2 - 4 nm in height with the average radius of about 40-80 nm. Magnetization temperature dependences are different for FC and ZFC processes; in the latter case, the magnetization maximum is observed near the temperature T m?50K. The exchange bias effect is observed at low temperatures. The results are explained by the formation of the antiferromagnetic phase in the interface between Ni and Ge layers due to the Ge and Ni mutual diffusion.

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Держатели документа:
Kirensky Institute of Physics, SB, RAS, Academgorodok, Krasnoyarsk 660036, Russian Federation
Siberian Federal University, Krasnoyarsk 660041, Russian Federation

Доп.точки доступа:
Chernichenko, A. V.; Черниченко, Ангелина Виталиевна; Edelman, I. S.; Эдельман, Ирина Самсоновна; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Marushchenko, D. A.; Марущенко, Дмитрий Анатольевич; Turpanov, I. A.; Турпанов, Игорь Александрович; Patrin, G. S.; Патрин, Геннадий Семёнович; Greben'kova, Yu. E.; Гребенькова, Юлия Эрнестовна
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Magnetic resonance properties of low-dimensional cobalt-Al2O3-germanium tunnel contact / A. V. Kobyakov, G. S. Patrin, V. I. Yushkov [et al.] // VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022) : Book of abstracts / program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 1, Sect. : Spintronics and magnetic nanostructures. - Ст. A.P1. - P. 97-98. - Cited References: 4. - The work was carried out in the process of fulflling the state task of the Ministry of Science and Higher Education of the Russian Federation No. FSRZ-2020-0011 “Synthesis and physical foundations of nanoscale film and granular composite materials for spintronics devices” . - ISBN 978-5-94469-051-7

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia
Siberian Federal University, Krasnoyarsk, Russia

Доп.точки доступа:
Ovchinnikov, S. G. \program com.\; Овчинников, Сергей Геннадьевич; Kobyakov, A. V.; Кобяков, Александр Васильевич; Patrin, G. S.; Патрин, Геннадий Семёнович; Yushkov, V. I.; Юшков, Василий Иванович; Shiyan, Ya. G.; Шиян, Ярослав Германович; Rudenko, R. Yu.; Руденко, Роман Юрьевич; Kosyrev, N. N.; Косырев, Николай Николаевич; Российская академия наук; Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН; Казанский (Приволжский) федеральный университет; Euro-Asian Symposium "Trends in MAGnetism"(8 ; 2022 ; Aug. ; 22-26 ; Kazan); "Trends in MAGnetism", Euro-Asian Symposium(8 ; 2022 ; Aug. ; 22-26 ; Kazan)
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Magnetic resonance properties of low-dimensional cobalt – Al2O3-germanium tunnel contacts / A. V. Kobyakov, G. S. Patrin, V. I. Yushkov [et al.] // Magn. Reson. Solids. - 2022. - Vol. 24, Is. 2. - Ст. 22201, DOI 10.26907/mrsej-22201. - Cited References: 12. - The work was carried out in the process of fulfilling the state task of the Ministry of Science and Higher Education of the Russian Federation No. FSRZ-2020-0011 "Synthesis and physical foundations of nanoscale film and granular composite materials for spintronics devices" . - ISSN 2072-5981
Кл.слова (ненормированные):
magnetic resonance -- multilayer magnetic films -- nanostructures -- tunnel effect
Аннотация: The magnetic resonance properties of a low-dimensional cobalt-Al2O3-germanium tunnel contact are studied in this work. The appearance of minima observed at low temperatures on both sides of the cobalt layer was found on the thermomagnetic curve. The value of the temperature minimum differs in magnitude on both sides of the cobalt layer. The position of the minimum in the temperature dependence of magnetization depends on the sample preparation technology. As a result of layer growth, at least two magnetic phases appear. One contribution is from the spins of ferromagnetic particles (cobalt particles with a hexagonal close packed lattice), and additional contributions from the magnetically disordered phase of fine cobalt particles and Co-Al2O3 compounds.

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Держатели документа:
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Achinsk Branch of Krasnoyarsk State Agrarian University, Achinsk, 662100, Russian Federation

Доп.точки доступа:
Kobyakov, A. V.; Кобяков, Александр Васильевич; Patrin, G. S.; Патрин, Геннадий Семёнович; Yushkov, V. I.; Юшков, Василий Иванович; Shiyan, Ya. G.; Шиян, Ярослав Германович; Rudenko, R. Yu.; Kosyrev, N. N.; Косырев, Николай Николаевич; Zharkov, S. M.; Жарков, Сергей Михайлович
}
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    Magnetic and magnetoresistance properties of (Co/Ge)n films / G. S. Patrin [et al.] // Solid State Phenom. : Selected, peer reviewed papers. - 2015. - Vol. 233-234: Achievements in Magnetism. - P. 423-426, DOI 10.4028/www.scientific.net/SSP.233-234.423 . - ISSN 1662-9779. - ISSN 978-3-038
   Перевод заглавия: Магнитные и магниторезистивные свойства (Co/Ge)_n пленок
Рубрики:
Achievements in magnetism
   Spintronics and magnetotransport
Кл.слова (ненормированные):
bilayer structure magnetization -- cobalt -- coercivity -- ferromagnetic metal/semiconductor films -- germanium interface -- magnetoresistance -- schottky barrier
Аннотация: The magnetic and electrical properties of (Co/Ge)nfilms are experimentally studied. It is established that at the Co/Ge interfacean intermediate magnetic layer forms. Twophases of cobalt, one is a face-centered cubic phase and the other ispresumably a Co–Ge alloy with a weakly ferromagnetic order, have been found toexist. A “dead” layer no more than 2 nm in thickness is formed at the interface.This layer affects the magnetic behavior andmagnetoresistive effect in the investigated structures.

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Доп.точки доступа:
Perov, N. \ed.\; Semisalova, A. \ed.\; Patrin, G. S.; Патрин, Геннадий Семёнович; Turpanov, I. A.; Турпанов, Игорь Александрович; Patrin, K. G.; Патрин, Константин Геннадьевич; Marushchenko, E. A.; Марущенко, Е. А.; Kobyakov, A. V.; Кобяков, Александр Васильевич; Maltsev, V. K.; Мальцев, Вадим Константинович; Yushkov, V. I.; Юшков, Василий Иванович; Moscow International Symposium on Magnetism(6 ; 2014 ; June-July ; Moscow)
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Magnetic and electrical properties of Co/Ge bilayer films / G. S. Patrin [et al.] // Solid State Phenom. : Selected, peer reviewed papers. - 2014. - Vol. 215: Trends in Magnetism: Nanomagnetism (EASTMAG-2013). - P. 348-351, DOI 10.4028/www.scientific.net/SSP.215.348. - Cited References: 8 . - ISSN 978-30383. - ISSN 1662-9779
Кл.слова (ненормированные):
Bilayer structure ferromagnetic metal/semiconductor -- Cobalt -- Coercivity -- Germanium interface -- Magnetization -- Magnetoresistance -- Schottky barrier
Аннотация: The magnetic and electrical properties of Co/Ge bilayer films are experimentally studied. It is established that at the Co/Ge interface an intermediate magnetic layer forms. This layer affects the magnetic behavior and magnetoresistive effect in the investigated structures. © (2014) Trans Tech Publications, Switzerland.

Доп.точки доступа:
Ovchinnikov, S. G. \ed.\; Овчинников, Сергей Геннадьевич; Samardak, A. \ed.\; Patrin, G. S.; Патрин, Геннадий Семёнович; Turpanov, I. A.; Турпанов, Игорь Александрович; Patrin, K. G.; Патрин, Константин Геннадьевич; Alekseichik, E. A.; Алексейчик, Е. А.; Kobyakov, A. V.; Кобяков, Александр Васильевич; Yushkov, V. I.; Юшков, Василий Иванович; Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism(5 ; 2013 ; sept. ; 15-21 ; Vladivostok)
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Germanium metasurfaces with lattice Kerker effect in near-infrared photodetectors / Z.-X. Zhou, M.-J. Ye, M.-W. Yu [et al.] // ACS Nano. - 2022. - Vol. 16. Is. 4. - P. 5994-6001, DOI 10.1021/acsnano.1c11326. - Cited References: 51. - We are grateful to Prof. Chun-Ting Lin and Prof. Chien-Chung Lin for helpful discussions. This work was supported by the Higher Education Sprout Project of the National Yang Ming Chiao Tung University and Ministry of Education and the Ministry of Science and Technology (MOST-111-2923-E-A49-001-MY3; 108-2923-E-009-003-MY3; 110-2224-E-009-002; 109-2628-E-009-007-MY3; 110-2221-E-A49-019-MY3). This research was also funded by the Russian Science Foundation (project no. 22-42-08003) . - ISSN 1936-0851
Кл.слова (ненормированные):
germanium (Ge) -- high refractive index (HRI) -- dielectric nanoantennas -- photodetector -- metasurfaces -- absorber
Аннотация: In O-and C-band optical communications, Ge is a promising material for detecting optical signals that are encoded into electrical signals. Herein, we study 2D periodic Ge metasurfaces that support optically induced electric dipole and magnetic dipole lattice resonances. By overlapping Mie resonances and electric dipole lattice resonances, we realize the resonant lattice Kerker effect and achieve narrowband absorption. This effect was applied to the photodetector demonstrated in this study. The absorptance of the Ge nanoantenna arrays increased 6-fold compared to that of the unpatterned Ge films. In addition, the photocurrent in such Ge metasurface photodetectors increases by approximately 5 times compared with that in plane Ge film photodetectors by the interaction of these strong near-fields with semiconductors and the further transformation of the optical energy into electricity.

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Держатели документа:
Institute of Photonic System, National Yang Ming Chiao Tung University, 301 Gaofa 3rd Road, Tainan, 711, Taiwan
College of Photonics, National Yang Ming Chiao Tung University, 301 Gaofa 3rd Road, Tainan, 711, Taiwan
Institute of Lighting and Energy Photonics, National Yang Ming Chiao Tung University, 301 Gaofa 3rd Road, Tainan, 711, Taiwan
Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87131, United States
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Institute of Engineering Physics and Radioelectronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Institute of Imaging and Biomedical Photonics, National Yang Ming Chiao Tung University, 301 Gaofa 3rd Road, Tainan, 711, Taiwan

Доп.точки доступа:
Zhou, Z. -X.; Ye, M. -J.; Yu, M. -W.; Yang, J. -H.; Su, K. -L.; Yang, C. -C.; Lin, C. -Y.; Babicheva, V. E.; Timofeev, I. V.; Тимофеев, Иван Владимирович; Chen, K. -P.
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10.

Formation of ferromagnetic germanides by solid-state reactions in 20Ge/80Mn films / V. G. Myagkov [et al.] // Thin Solid Films. - 2014. - Vol. 552. - P. 86-91, DOI 10.1016/j.tsf.2013.12.029. - Cited References: 53 . - ISSN 0040-6090

РУБ Materials Science, Multidisciplinary + Materials Science, Coatings & Films + Physics, Applied + Physics, Condensed Matter
Рубрики:
PHASE-FORMATION
   MAGNETIC-PROPERTIES
   Mn5Ge3 FILMS
   X-RAY
   Ge(111)
   TRANSFORMATIONS
   DIFFUSION
   SPECTRA
   SYSTEM
   LAYERS
Кл.слова (ненормированные):
Manganite-germanium -- Solid state reaction -- First phase -- Mn5Ge3 alloy -- Carbon impurity -- Oxygen impurity -- Annealing -- Magnetic anisotropy
Аннотация: Solid state reactions between Ge and Mn films are systematically examined using X-ray diffraction, photoelectron spectroscopy, and magnetic and electrical measurements. The films have a nominal atomic ratio Ge:Mn = 20:80 and are investigated at temperatures from 50 to 500 °C. It is established that after annealing at ~ 120°C, the ferromagnetic Mn5Ge3 phase is the first phase to form at the 20Ge/80Mn interface. As the annealing temperature increases to 300°C, the weak magnetic Mn5Ge 2 + Mn3Ge phases simultaneously begin to grow and they become dominant at 400°C. Increasing the annealing temperature to 500°C leads to the formation of the ferromagnetic phase with a Curie temperature TC ~ 350-360 K and magnetization 14-25 kA/m at room temperature. The X-ray diffraction study of the samples shows the reflections from the Mn 5Ge3 phase, and the photoelectron spectra contain the oxygen and carbon peaks. The homogeneous distribution of oxygen and carbon over the sample thickness suggests that the increased Curie temperature and magnetization are related to the migration of C and O atoms into the Mn 5Ge3 lattice and the formation of the Nowotny phase Mn5Ge3CxOy. The initiation temperature (~ 120 C) is the same in the Mn5Ge3 phase with the solid-state reactions in the Ge/Mn films as well as in the phase separation in the GexMn1 - x diluted semiconductors. Thus, we conclude that the synthesis of the Mn5Ge3 phase is the moving force for the spinodal decomposition of the GexMn 1 - x diluted semiconductors.

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
Russian Acad Sci, Inst Chem & Chem Technol, Siberian Branch, Krasnoyarsk 660049, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia

Доп.точки доступа:
Myagkov, V. G.; Мягков, Виктор Григорьевич; Zhigalov, V. S.; Жигалов, Виктор Степанович; Matsynin, A. A.; Мацынин, Алексей Александрович; Bykova, L. E.; Быкова, Людмила Евгеньевна; Mikhlin, Y. L.; Bondarenko, G. N.; Бондаренко, Галина Николаевна; Patrin, G. S.; Патрин, Геннадий Семёнович; Yurkin, G. Yu.; Юркин, Глеб Юрьевич
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