Библиотека института физики им. Л.В. Киренского СО РАН

Главная

Базы данных

Труды сотрудников ИФ СО РАН - результаты поиска

Вид поиска

Каталог книг и брошюр библиотеки ИФ СО РАН

Каталог журналов библиотеки ИФ СО РАН

Труды сотрудников ИФ СО РАН

Область поиска

в найденном

Найдено в других БД:

Каталог книг и брошюр библиотеки ИФ СО РАН (5)

Каталог журналов библиотеки ИФ СО РАН (1)

Формат представления найденных документов:
полный	информационный	краткий

Отсортировать найденные документы по:
автору	заглавию	году издания	типу документа

Поисковый запрос: (<.>K=germanium<.>)

Общее количество найденных документов : 12
Показаны документы с 1 по 10

1-10 11-12

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Кошелев А. А., Яковлев, Иван Александрович, Варнаков, Сергей Николаевич
Заглавие : Исследование процессов эпитаксиального роста германия на поверхности Fe3Si/Si(111) [Электронный ресурс]
Коллективы : "Решетневские чтения", международная научно-практическая конференция, Сибирский государственный университет науки и технологий им. акад. М. Ф. Решетнева, Информационные спутниковые системы им. М.Ф. Решетнева, ОАО, "Красноярский машиностроительный завод", ОАО, Федеральный исследовательский центр "Красноярский научный центр Сибирского отделения Российской академии наук"
Место публикации : Решетневские чтения: материалы XXVII Междунар. науч.-практич. конф., посв. памяти генер. констр. ракетно-космич. систем акад. М. Ф. Решетнева : в 2-х ч. - Красноярск, 2023. - Ч. 1, Секция: Наноматериалы, нанотехнологии и информационные системы в аэрокосмической отрасли. - С. 591-593
Вид и объем ресурса: Электрон. текстовые дан.
Примечания : Библиогр.: 6. - Загл. с титул. экрана
Материалы конференции,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Chibisov, Andrey N., Chibisova, Mary A., Prokhorenko, Anastasiia V., Obrazcov, Kirill V., Fedorov A. S., Yu, Yang-Xin
Заглавие : Possibilities of controlling the quantum states of hole qubits in an ultrathin germanium layer using a magnetic substrate: Results from ab initio calculations
Колич.характеристики :8 с
Место публикации : Nanomaterials. - 2023. - Vol. 13, Is. 23. - Ст.3070. - ISSN 20794991 (eISSN), DOI 10.3390/nano13233070
Примечания : Cited References: 36. - This work was supported by the Russian Science Foundation of the Russian Federation (project No. 22-23-01186). The authors would like to thank them for providing access to the HPC cluster at the Center for Shared Use of Scientific Equipment and the Center for Processing and Storage of Scientific Data of the Far Eastern Branch of the Russian Academy of Sciences and the Joint Supercomputer Center of the Russian Academy of Sciences (JSCC RAS)
Аннотация: Using density functional theory in the noncollinear approximation, the behavior of quantum states of hole qubits in a Ge/Co:ZnO system was studied in this work. A detailed analysis of the electronic structure and the distribution of total charge density and hole states was carried out. It was shown that in the presence of holes, the energetically more favorable quantum state is the state |0˃, in contrast to the state |1˃ when there is no hole in the system. The favorability of hole states was found to be dependent on the polarity of the applied electric field.
Смотреть статью,
Scopus,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Chernichenko A. V., Edelman I. S., Velikanov D. A., Marushchenko D. A., Turpanov I. A., Patrin G. S., Greben'kova Yu. E.
Заглавие : Peculiarities of magnetic properties of Ni-Ge layered films
Место публикации : TRENDS IN MAGNETISM. - 2011. - Vol. 168-169. - С. 261-264. - ISSN 10120394 (ISSN); 9783037850213 (ISBN), DOI 10.4028/www.scientific.net/SSP.168-169.261
Ключевые слова (''Своб.индексиров.''): exchange bias effect--magnetic properties--ni and ge mutual diffusion--ni-ge layer structures--surface morphology--antiferromagnetism--diffusion--germanium--magnetic properties--magnetization--morphology--phase interfaces--solids--germanium--magnetic properties--magnetization--nickel--surface morphology--temperature distribution--antiferromagnetic phase--exchange bias effects--ge films--layered films--low temperatures--magnetization temperature--mutual diffusion--ni and ge mutual diffusion--ni-ge layer structures--ge layers--surface morphology--magnetism
Аннотация: The surface morphology and magnetic properties of layered Ni-Ge films were investigated. The films surface has been shown to consist of the grains of 2 - 4 nm in height with the average radius of about 40-80 nm. Magnetization temperature dependences are different for FC and ZFC processes; in the latter case, the magnetization maximum is observed near the temperature T m?50K. The exchange bias effect is observed at low temperatures. The results are explained by the formation of the antiferromagnetic phase in the interface between Ni and Ge layers due to the Ge and Ni mutual diffusion.
Scopus,
eLibrary,
WOS
Найти похожие

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Kobyakov A. V., Patrin G. S., Yushkov V. I., Shiyan Ya. G., Rudenko R. Yu., Kosyrev N. N.
Заглавие : Magnetic resonance properties of low-dimensional cobalt-Al2O3-germanium tunnel contact
Коллективы : Российская академия наук, Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН, Казанский (Приволжский) федеральный университет, Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022): Book of abstracts/ program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 1, Sect.: Spintronics and magnetic nanostructures. - Ст.A.P1. - P.97-98. - ISBN 978-5-94469-051-7
Примечания : Cited References: 4. - The work was carried out in the process of fulflling the state task of the Ministry of Science and Higher Education of the Russian Federation No. FSRZ-2020-0011 “Synthesis and physical foundations of nanoscale film and granular composite materials for spintronics devices”
Материалы симпозиума, ,
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kobyakov A. V., Patrin G. S., Yushkov V. I., Shiyan Ya. G., Rudenko R. Yu., Kosyrev N. N., Zharkov S. M.
Заглавие : Magnetic resonance properties of low-dimensional cobalt – Al2O3-germanium tunnel contacts
Место публикации : Magn. Reson. Solids. - 2022. - Vol. 24, Is. 2. - Ст.22201. - ISSN 20725981 (ISSN), DOI 10.26907/mrsej-22201
Примечания : Cited References: 12. - The work was carried out in the process of fulfilling the state task of the Ministry of Science and Higher Education of the Russian Federation No. FSRZ-2020-0011 "Synthesis and physical foundations of nanoscale film and granular composite materials for spintronics devices"
Аннотация: The magnetic resonance properties of a low-dimensional cobalt-Al2O3-germanium tunnel contact are studied in this work. The appearance of minima observed at low temperatures on both sides of the cobalt layer was found on the thermomagnetic curve. The value of the temperature minimum differs in magnitude on both sides of the cobalt layer. The position of the minimum in the temperature dependence of magnetization depends on the sample preparation technology. As a result of layer growth, at least two magnetic phases appear. One contribution is from the spins of ferromagnetic particles (cobalt particles with a hexagonal close packed lattice), and additional contributions from the magnetically disordered phase of fine cobalt particles and Co-Al2O3 compounds.
Смотреть статью,
Scopus
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Patrin G. S., Turpanov I. A., Patrin K. G., Marushchenko E. A., Kobyakov A. V., Maltsev V. K., Yushkov V. I.
Заглавие : Magnetic and magnetoresistance properties of (Co/Ge)n films
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Solid State Phenom.: Selected, peer reviewed papers/ ed.: N. Perov, A. Semisalova: Trans Tech Publications Ltd, 2015. - Vol. 233-234: Achievements in Magnetism. - P.423-426. - ISSN 1662-9779, DOI 10.4028/www.scientific.net/SSP.233-234.423. - ISSN 978-3-03835-482-6
Предметные рубрики: Achievements in magnetism
Spintronics and magnetotransport
Ключевые слова (''Своб.индексиров.''): bilayer structure magnetization--cobalt--coercivity--ferromagnetic metal/semiconductor films--germanium interface--magnetoresistance--schottky barrier
Аннотация: The magnetic and electrical properties of (Co/Ge)nfilms are experimentally studied. It is established that at the Co/Ge interfacean intermediate magnetic layer forms. Twophases of cobalt, one is a face-centered cubic phase and the other ispresumably a Co–Ge alloy with a weakly ferromagnetic order, have been found toexist. A “dead” layer no more than 2 nm in thickness is formed at the interface.This layer affects the magnetic behavior andmagnetoresistive effect in the investigated structures.
Смотреть статью,
Материалы конференции,
Scopus,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Patrin G. S., Turpanov I. A., Patrin K. G., Alekseichik E. A., Kobyakov A. V., Yushkov V. I.
Заглавие : Magnetic and electrical properties of Co/Ge bilayer films
Коллективы : Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism
Место публикации : Solid State Phenom.: Selected, peer reviewed papers/ ed.: S. G. Ovchinnikov, A. Samardak: Trans Tech Publications, 2014. - Vol. 215: Trends in Magnetism: Nanomagnetism (EASTMAG-2013). - P.348-351. - ISSN 978-303835054-5, DOI 10.4028/www.scientific.net/SSP.215.348. - ISSN 1662-9779
Примечания : Cited References: 8
Ключевые слова (''Своб.индексиров.''): bilayer structure ferromagnetic metal/semiconductor--cobalt--coercivity--germanium interface--magnetization--magnetoresistance--schottky barrier
Аннотация: The magnetic and electrical properties of Co/Ge bilayer films are experimentally studied. It is established that at the Co/Ge interface an intermediate magnetic layer forms. This layer affects the magnetic behavior and magnetoresistive effect in the investigated structures. © (2014) Trans Tech Publications, Switzerland.
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zhou Z. -X., Ye M. -J., Yu M. -W., Yang J. -H., Su K. -L., Yang C. -C., Lin C. -Y., Babicheva V. E., Timofeev I. V., Chen K. -P.
Заглавие : Germanium metasurfaces with lattice Kerker effect in near-infrared photodetectors
Место публикации : ACS Nano. - 2022. - Vol. 16. Is. 4. - P.5994-6001. - ISSN 19360851 (ISSN), DOI 10.1021/acsnano.1c11326
Примечания : Cited References: 51. - We are grateful to Prof. Chun-Ting Lin and Prof. Chien-Chung Lin for helpful discussions. This work was supported by the Higher Education Sprout Project of the National Yang Ming Chiao Tung University and Ministry of Education and the Ministry of Science and Technology (MOST-111-2923-E-A49-001-MY3; 108-2923-E-009-003-MY3; 110-2224-E-009-002; 109-2628-E-009-007-MY3; 110-2221-E-A49-019-MY3). This research was also funded by the Russian Science Foundation (project no. 22-42-08003)
Аннотация: In O-and C-band optical communications, Ge is a promising material for detecting optical signals that are encoded into electrical signals. Herein, we study 2D periodic Ge metasurfaces that support optically induced electric dipole and magnetic dipole lattice resonances. By overlapping Mie resonances and electric dipole lattice resonances, we realize the resonant lattice Kerker effect and achieve narrowband absorption. This effect was applied to the photodetector demonstrated in this study. The absorptance of the Ge nanoantenna arrays increased 6-fold compared to that of the unpatterned Ge films. In addition, the photocurrent in such Ge metasurface photodetectors increases by approximately 5 times compared with that in plane Ge film photodetectors by the interaction of these strong near-fields with semiconductors and the further transformation of the optical energy into electricity.
Смотреть статью,
Scopus,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Zhigalov V. S., Matsynin A. A., Bykova L. E., Mikhlin Y. L., Bondarenko G. N., Patrin G. S., Yurkin G. Yu.
Заглавие : Formation of ferromagnetic germanides by solid-state reactions in 20Ge/80Mn films
Место публикации : Thin Solid Films: Elsevier Science, 2014. - Vol. 552. - P.86-91. - ISSN 0040-6090, DOI 10.1016/j.tsf.2013.12.029
Примечания : Cited References: 53
Предметные рубрики: PHASE-FORMATION
MAGNETIC-PROPERTIES
Mn5Ge3 FILMS
X-RAY
Ge(111)
TRANSFORMATIONS
DIFFUSION
SPECTRA
SYSTEM
LAYERS
Ключевые слова (''Своб.индексиров.''): manganite-germanium--solid state reaction--first phase--mn5ge3 alloy--carbon impurity--oxygen impurity--annealing--magnetic anisotropy
Аннотация: Solid state reactions between Ge and Mn films are systematically examined using X-ray diffraction, photoelectron spectroscopy, and magnetic and electrical measurements. The films have a nominal atomic ratio Ge:Mn = 20:80 and are investigated at temperatures from 50 to 500 °C. It is established that after annealing at ~ 120°C, the ferromagnetic Mn5Ge3 phase is the first phase to form at the 20Ge/80Mn interface. As the annealing temperature increases to 300°C, the weak magnetic Mn5Ge 2 + Mn3Ge phases simultaneously begin to grow and they become dominant at 400°C. Increasing the annealing temperature to 500°C leads to the formation of the ferromagnetic phase with a Curie temperature TC ~ 350-360 K and magnetization 14-25 kA/m at room temperature. The X-ray diffraction study of the samples shows the reflections from the Mn 5Ge3 phase, and the photoelectron spectra contain the oxygen and carbon peaks. The homogeneous distribution of oxygen and carbon over the sample thickness suggests that the increased Curie temperature and magnetization are related to the migration of C and O atoms into the Mn 5Ge3 lattice and the formation of the Nowotny phase Mn5Ge3CxOy. The initiation temperature (~ 120 C) is the same in the Mn5Ge3 phase with the solid-state reactions in the Ge/Mn films as well as in the phase separation in the GexMn1 - x diluted semiconductors. Thus, we conclude that the synthesis of the Mn5Ge3 phase is the moving force for the spinodal decomposition of the GexMn 1 - x diluted semiconductors.
Смотреть статью,
Scopus,
WoS,
WOS,
Читать в сети ИФ
Найти похожие

10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zharkov S. M., Kveglis L. I.
Заглавие : Electron-beam-initiated crystallization of iron-carbon films
Место публикации : Phys. Solid State: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2004. - Vol. 46, Is. 5. - P969-974. - ISSN 1063-7834, DOI 10.1134/1.1744977
Примечания : Cited References: 34
Предметные рубрики: AMORPHOUS-GERMANIUM FILMS
EXPLOSIVE CRYSTALLIZATION
PATTERN-FORMATION
TEMPERATURE
MICROSCOPY
MECHANISM
Аннотация: A structure formed in nanocrystalline iron-carbon films exposed to an electron beam was studied. Explosive crystallization (EC) with the formation of dendrite and cellular-dendritic instabilities at a rate of up to 1 cm/s was observed. It was shown that the dependence between the growth rate of dendrite branches (or cells) during EC and the rounding radius of dendrite branch tips can be approximately described by equations used to calculate the crystal growth in supercooled melts. To explain the EC mechanism, a model of a liquid zone formed at the crystallization front was used. It was shown that the liquid zone arises due to energy accumulated in the film in the nanocrystalline state. It was assumed that this energy was accumulated due to the energy of elastic stresses. (C) 2004 MAIK "Nauka / Interperiodica".
WOS,
Scopus,
Читать в сети ИФ
Найти похожие