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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Lee C. G., Kim P. D., Eremin E. V., Patrin G. S.
Заглавие : Optically driven conductivity and magnetoresistance in a manganite-based tunnel structure
Коллективы : Russian Foundation for Basic Research [08-02-00259-a, 08-02-00397-a]; Division of Physical Sciences of the RAS; [2.4.2]
Место публикации : J. Phys. D. - 2009. - Vol. 42, Is. 20. - Ст.205009. - ISSN 0022-3727, DOI 10.1088/0022-3727/42/20/205009
Примечания : Cited References: 13. - This study was supported by the Russian Foundation for Basic Research (Projects Nos 08-02-00259-a and 08-02-00397-a) and the Division of Physical Sciences of the RAS, Programme 'Spin-dependent Effects in Solids and Spintronics' (Project No 2.4.2 of the Siberian Branch of the RAS).
Предметные рубрики: JUNCTIONS
Ключевые слова (''Своб.индексиров.''): conducting layers--current-in-plane geometry--dielectric layer--electron hole pairs--interband absorption--magnetic tunnel junction--magnetic tunnels--multilayer structures--optical radiations--photoinduced change--potential barriers--radiation power density--threshold characters--tunnel structures--electric resistance--lanthanum--light--magnetic field effects--magnetoelectronics--magnetoresistance--manganese compounds--oxide minerals--photovoltaic effects--semiconductor junctions--transport properties--vehicular tunnels--wind tunnels--tunnel junctions
Аннотация: In the multilayer structure, La(0.7)Sr(0.3)MnO(3)/depleted manganite layer/MnSi, the photovoltaic effect has been discovered. The depleted manganite layer in the structure is dielectric and serves as a potential barrier between the ferromagnetic conducting La(0.7)Sr(0.3)MnO(3) and MnSi layers by the formation of a magnetic tunnel junction. The photoinduced changes in the transport properties of the magnetic tunnel structure have been observed in the current-in-plane geometry. The changes are reversible and saturate at radiation power densities over 30 mW cm(-2). The photovoltaic effect has a threshold character: it reveals only at h nu 1.17 eV. Most likely, the effect of optical radiation is related to the formation of electron-hole pairs due to interband absorption of light in the dielectric layer. A photocurrent through the tunnel junctions separating the conducting layers causes a redistribution of the current channels between the conducting layers, which influences the conductivity and the magnetoresistance of the structure.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Tsikalov V. S., Patrin G. S., Kim P. D., Seong-Cho Y., Kim D. H., Chau N.
Заглавие : Current-driven channel switching and colossal positive magnetoresistance in the manganite-based structure
Коллективы : RFBR [08-02-00259-a, 08-02-00397-a]; KRSF-RFBR [07-02-96801-a]; Division of Physical Sciences of RAS; Program 'Spin-dependent Effects in Solids and Spintronics' [2.4.2]
Место публикации : J. Phys. D. - 2009. - Vol. 42, Is. 6. - Ст.65005. - ISSN 0022-3727, DOI 10.1088/0022-3727/42/6/065005
Примечания : Cited References: 20. - This study was supported by the RFBR, Projects No 08-02-00259-a and 08-02-00397-a, the KRSF-RFBR 'Enisey-2007', Project No 07-02-96801-a and the Division of Physical Sciences of RAS, Program 'Spin-dependent Effects in Solids and Spintronics' (Project No 2.4.2 of SB RAS).
Ключевые слова (''Своб.индексиров.''): colossal magnetoresistance--electric resistance--electronic structure--magnetic field effects--magnetoelectronics--manganese--manganites--oxide minerals--schottky barrier diodes--semiconductor junctions--silicides--tunnel junctions--tunnels--bottom layers--channel switching--conducting channels--conducting layers--current-driven--current-in-plane geometries--depletion layers--ferromagnetic state--layered structures--low-resistance contacts--magnetic tunnel junctions--magneto-transport properties--manganese silicides--manganite films--new mechanisms--positive magnetoresistances--positive mr--potential barriers--spin-polarized--tunnel structures--voltage-current characteristics--current voltage characteristics
Аннотация: The transport and magnetotransport properties of a newly fabricated tunnel structure manganite/depletion layer/manganese silicide have been studied in the current-in-plane (CIP) geometry. A manganite depletion layer in the structure forms a potential barrier sandwiched between two conducting layers, one of manganite and the other of manganese silicide. The voltage-current characteristics of the structure are nonlinear due to switching conducting channels from an upper manganite film to a bottom, more conductive MnSi layer with an increase in the current applied to the structure. Bias current assists tunnelling of a carrier across the depletion layer; thus, a low-resistance contact between the current-carrying electrodes and the bottom layer is established. Below 30 K, both conducting layers are in the ferromagnetic state (magnetic tunnel junction), which allows control of the resistance of the tunnel junction and, consequently, switching of the conducting channels by the magnetic field. This provides a fundamentally new mechanism of magnetoresistance (MR) implementation in the magnetic layered structure with CIP geometry. MR of the structure under study depends on the bias current and can reach values greater than 400% in a magnetic field lower than 1 kOe. A positive MR value is related to peculiarities of the spin-polarized electronic structures of manganites and manganese silicides.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Dubrovskiy A. A., Shaykhutdinov K. A., Popkov S. I., Petrov M. I.
Заглавие : Peculiarities of the time evolution of magnetoresistance of granular HTSC in a constant applied magnetic field
Коллективы :
Место публикации : Solid State Commun. - 2008. - Vol. 147, Is. 7-8. - P.284-287. - ISSN 0038-1098, DOI 10.1016/j.ssc.2008.05.044
Примечания : Cited References: 17. - This work was Supported by program "Quantum macrophysics" No. 3.4 of RAS and integration project No. 3.4 of SB RAS and in part by KSF, grant 18G011. D.A.B. and A.A.D. acknowledge the Russian Science Support Foundation.
Предметные рубрики: CRITICAL-STATE
SUPERCONDUCTORS
COMPOSITES
HYSTERESIS
RESISTANCE
Ключевые слова (''Своб.индексиров.''): superconductors--flux pinning and creep--tunneling--superconductors--flux pinning and creep--tunneling--agricultural products--carbon fiber reinforced plastics--copper oxides--electric conductivity--electric resistance--evolutionary algorithms--ferromagnetism--galvanomagnetic effects--grain (agricultural product)--health--hysteresis--magnetic devices--magnetic field effects--magnetic field measurement--magnetic fields--magnetic materials--magnetoelectronics--magnetoresistance--semiconductor metal boundaries--superconducting magnets--superconductivity--yttrium barium copper oxides--p ,p ,t measurements--applied (co)--applied magnetic fields--constant magnetic field (cmf)--elsevier (co)--evolution (co)--external fields--field induced--flux creep--hysteretic behavior--josephson couplings--low magnetic fields--magnetic (ce)--poly crystalline--superconducting grains--time evolutions--time relaxation--magnetism
Аннотация: The time evolution of the magnetoresistance of bulk YBCO + CuO composites at T = 4.2 K in constant applied magnetic fields was studied to clarify the mechanism of hysteretic behavior of magnetoresistance R(H) of granular HTSC. The composites represent "model" granular HTSC with weakened Josephson coupling between superconducting (YBCO) crystallites. It was found for the first time that on the ascending branch of R(H) dependence, the resistance at H = const decreased with time while on the descending branch, the resistance increased with time in ail applied constant magnetic field. In the range of low magnetic fields (below the minimum point of the descending branch of the R(H) dependence), the resistance at H const decreased again. Similar measurements performed oil pure polycrystalline YBCO at T = 77.4 K have shown that the behavior of evolution of resistance with time is similar to that observed for the composite. This proves the peculiarity of time evolution of maignetoresistance to be a common feature of granular HTSCs. The behavior revealed is well described by the model Of granular HTSC, where the intergrain media is in an effective magnetic field which is the superposition of the external field and the field induced by superconducting grains. The time evolution of resistance reflects the time relaxation of magnetization of HTSC grains due to the intragrain flux Creep Processes. (C) 2008 Elsevier Ltd. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Ding Y., Haskel D., Ovchinnikov S. G., Tseng Y. C., Orlov Y. S., Lang J. C., Mao H. K.
Заглавие : Novel pressure-induced magnetic transition in magnetite (Fe(3)O(4))
Разночтения заглавия :авие SCOPUS: Novel pressure-induced magnetic transition in magnetite (Fe3O4)
Место публикации : Phys. Rev. Lett.: AMER PHYSICAL SOC, 2008. - Vol. 100, Is. 4. - Ст.45508. - ISSN 0031-9007, DOI 10.1103/PhysRevLett.100.045508
Примечания : Cited References: 39
Предметные рубрики: MULTIPLE-SCATTERING THEORY
X-RAY DICHROISM
LOWER MANTLE
VERWEY TRANSITION
K-EDGE
CIRCULAR-DICHROISM
SPIN TRANSITION
BAND-STRUCTURE
IRON
FE
Ключевые слова (''Своб.индексиров.''): emission spectroscopy--magnetoelectronics--pressure effects--synchrotron radiation--diamond anvil cell--magnetic transition--x-ray magnetic circular dichroism--magnetite
Аннотация: Fe K-edge x-ray magnetic circular dichroism of magnetite (Fe(3)O(4)) powders was measured with synchrotron radiation under variable pressure and temperature conditions in diamond anvil cell. The magnetic dichroism was observed to decrease discontinuously by similar to 50% between 12 and 16 GPa, independent of temperature. The magnetic transition is attributed to a high-spin to intermediate-spin transition of Fe(2+) ions in the octahedral sites and could account for previously observed structural and electrical anomalies in magnetite at this pressure range. The interpretation of x-ray magnetic circular dichroism data is supported by x-ray emission spectroscopy and theoretical cluster calculations.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Bondarev I. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Magneto-transport phenomena in metal/SiO2/n(p)-Si hybrid structures
Место публикации : J. Magn. Magn. Mater. - 2018. - Vol. 451. - P.143-158. - ISSN 03048853 (ISSN), DOI 10.1016/j.jmmm.2017.11.008
Примечания : Cited References: 31. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects № 17-02-00302, 16-42-242036 and 16-42-243046.
Ключевые слова (''Своб.индексиров.''): hybrid structures--magnetoresistance--magnetoimpedance--photo-magneto-electric effect--magnetoelectronics
Аннотация: Present review touches upon a subject of magnetotransport phenomena in hybrid structures which consist of ferromagnetic or nonmagnetic metal layer, layer of silicon oxide and silicon substrate with n- or p-type conductivity. Main attention will be paid to a number gigantic magnetotransport effects discovered in the devices fabricated on the base of the M/SiO2/n(p)-Si (M is ferromagnetic or paramagnetic metal) hybrid structures. These effects include bias induced dc magnetoresistance, gigantic magnetoimpedance, dc magnetoresistance induced by an optical irradiation and lateral magneto-photo-voltaic effect. The magnetoresistance ratio in ac and dc modes for some of our devices can exceed 106% in a magnetic field below 1 T. For lateral magneto-photo-voltaic effect, the relative change of photo-voltage in magnetic field can reach 103% at low temperature. Two types of mechanisms are responsible for sensitivity of the transport properties of the silicon based hybrid structures to magnetic field. One is related to transformation of the energy structure of the (donor) acceptor states including states near SiO2/n(p)-Si interface in magnetic field. Other mechanism is caused by the Lorentz force action. The features in behaviour of magnetotransport effects in concrete device depend on composition of the used structure, device topology and experimental conditions (bias voltage, optical radiation and others). Obtained results can be base for design of some electronic devices driven by a magnetic field. They can also provide an enhancement of the functionality for existing sensors.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kobyakov A. V., Patrin G. S., Turpanov I. A., Li L. A., Patrin K. G., Yushkov V. I., Petrakovskaya E. A., Rautskii M. V.
Заглавие : Interlayer coupling in Co/Ge/Co trilayers
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : Solid State Phenomena. - 2011. - Vol. 168-169. - P.273-276. - ISSN 10120394 ; 9783037850213, DOI 10.4028/www.scientific.net/SSP.168-169.273
Ключевые слова (''Своб.индексиров.''): electron magnetic resonance--interlayer coupling--magnetization--magnetoresistance--semiconductor spacer--trilayer films--electric resistance--magnetic field effects--magnetization--magnetoelectronics--magnetoresistance--magnetic resonance--magnetism--magnetization--magnetoresistance--electron magnetic resonance--exchange constants--interlayer coupling--semiconductor spacer--squid magnetometry--temperature dependent--trilayer film--trilayers--magnetic resonance--cobalt
Аннотация: The interlayer coupling in Co/Ge/Co trilayer films has been experimentally studied by the SQUID magnetometry and electron magnetic resonance. It has been found that the interlayer coupling is temperature-dependent. The values of the exchange constants have been determined.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Dubrovskii A. A., Shaikhutdinov K. A., Popkov S. I., Gokhfeld D. M., Gokhfeld Yu. S., Petrov M. I.
Заглавие : Mechanism of the hysteretic behavior of the magnetoresistance of granular HTSCs: The universal nature of the width of the magnetoresistance hysteresis loop
Коллективы : Quantum Macrophysics of the Russian Academy of Sciences [3.4]; Krasnoyarsk Regional Science Foundation [18G011]; Foundation for Supporting National Science Projects
Место публикации : J. Exp. Theor. Phys.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2009. - Vol. 108, Is. 2. - P241-248. - ISSN 1063-7761, DOI 10.1134/S106377610902006X
Примечания : Cited References: 32. - This study was carried out under the program "Quantum Macrophysics" of the Russian Academy of Sciences and complex integration project no. 3.4 of the Siberian Branch of the Russian Academy of Sciences, and was partly supported by the Krasnoyarsk Regional Science Foundation (grant no. 18G011). D. A. B. and A. A. D. are grateful to the Foundation for Supporting National Science Projects.
Предметные рубрики: CRITICAL-CURRENT-DENSITY
HIGH-TEMPERATURE SUPERCONDUCTOR
CURRENT-VOLTAGE CHARACTERISTICS
EXTERNAL MAGNETIC-FIELD
BA-CU-O
JOSEPHSON MEDIUM
CRITICAL-STATE
FLUX
COMPOSITES
YBA2CU3O7-DELTA
Ключевые слова (''Своб.индексиров.''): barium--calcium--damping--electric resistance--high temperature superconductors--magnetic field effects--magnetic materials--magnetoelectronics--magnetoresistance--stiffness--classical systems--critical densities--experimental datum--external conditions--flux trapping--hysteretic behaviors--josephson vortices--residual resistances--transport currents--universal behaviors--y-ba-cu-o--hysteresis
Аннотация: The hysteretic behavior of the magnetoresistance R(H) of granular high-temperature superconductors (HTSCs) of the Y-Ba-Cu-O, Bi-Ca-Sr-Cu-O, and La-Sr-Cu-O classical systems is investigated for transport current densities lower and higher than the critical density (at H = 0). All systems exhibit universal behavior of the width of the magnetoresistance hysteresis loop: independence of transport current under identical external conditions. This means that flux trapping in HTSC grains is the main mechanism controlling the hysteretic behavior of the magnetoresistance of granular HTSCs, while pinning of Josephson vortices in the intragranular medium makes no appreciable contribution to the formation of magnetoresistance hysteresis (when transport current flows through the sample). Experimental data on relaxation of residual resistance after the action of a magnetic field also confirm this conclusion.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Hsu, Hua-Shu, Chang Y.-Y., Chin Y.-Y., Lin H.-J., Chen C.-T., Sun S.-J., Zharkov S. M., Lin C.-R., Ovchinnikov S. G.
Заглавие : Exchange bias in graphitic C/Co composites
Место публикации : Carbon: Elsevier, 2017. - Vol. 114. - P.642-648. - ISSN 00086223 (ISSN), DOI 10.1016/j.carbon.2016.12.060
Примечания : Cited References: 54. - The authors would like to thank the Ministry of Science and Technology of the Republic of China, Taiwan, for financially supporting this research under Contract No. MOST 104-2112-M-153 -002 -MY3 (Hua-Shu Hsu), MOST 103-2112-M-213-004-MY3 (Hong-Ji Lin), and MOST 104-2112-M-390-001 (Shih-Jye Sun). We are thankful also to the President of Russia Program of support the leading scientific schools, grant NSh-7559,2016.2 (SGO).
Ключевые слова (''Своб.индексиров.''): carbides--carbon--dichroism--high resolution transmission electron microscopy--magnetoelectronics--transmission electron microscopy--x ray absorption--electronics production--exchange bias effects--experimental evidence--magnetic interactions--potential materials--spintronics application--theoretical modeling--x-ray magnetic circular dichroism--magnetic materials
Аннотация: The exchange bias (EB) effect, which is the shift of the hysteresis loop of a ferromagnet in direct contact with an antiferromagnet, is highly advantageous for the development of spintronics applications. Carbon (C) has been considered as a potential material in next generation electronics production as well as spintronics devices beyond silicon. Here we show experimental evidence for an EB in C/Co composites. The significant EB needs thermal annealing to occur. X-ray absorption spectra and transmission electron microscopy data of these samples reveal that Co carbides in as grown samples decompose and form graphitic C/Co interfaces after annealing. Using x-ray magnetic circular dichroism we have detected the C spins that are responsible for the EB. These results inspire a theoretical model to investigate the magnetic interactions in graphitic C/Co interfaces and interpret the observed results. © 2016 Elsevier Ltd
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Popkov S. I., Semenov S. V., Bykov A. A., Sabitova E. I., Dubrovskiy A. A., Shaikhutdinov K. A., Petrov M. I.
Заглавие : Contributions from Inter-grain Boundaries to the Magneto-resistive Effect in Polycrystalline High-T (C) Superconductors. The Underlying Reason of Different Behavior for YBCO and BSCCO Systems
Разночтения заглавия :авие SCOPUS: Contributions from inter-grain boundaries to the magneto-resistive effect in polycrystalline high-TC superconductors. the underlying reason of different behavior for YBCO and BSCCO systems
Место публикации : J. Supercond. Nov. Magn: SPRINGER, 2011. - Vol. 24, Is. 7. - P2129-2136. - ISSN 1557-1939, DOI 10.1007/s10948-011-1166-9
Примечания : Cited References: 30. - This work is supported by program N5 of RAS, project N7.
Предметные рубрики: HIGH-TEMPERATURE SUPERCONDUCTORS
PHASE-SLIP
TRANSPORT-PROPERTIES
TRANSITION
FIELD
COMPOSITES
BULK
TAPES
YBA2CU3O7-DELTA
DISSIPATION
Ключевые слова (''Своб.индексиров.''): bscco--ybco--intergrain boundaries--magnetoresistance--bscco--intergrain boundaries--magnetoresistance--ybco--bscco--bscco system--comparative studies--high tc superconductors--high-field--inter-grain--irreversibility lines--magneto-resistive effect--polycrystalline--resistive transition--standard measurements--weak pinning--ybco--bismuth--electric resistance--grain boundaries--high temperature superconductors--lead--magnetic fields--magnetoelectronics--magnetoresistance--magnetos--superconductivity--yttrium barium copper oxides--semiconductor metal boundaries
Аннотация: In order to clarify the mechanisms in charge of broadening of resistive transition R(T) in magnetic fields of bismuth-based polycrystalline high-T (C) superconductor (HTSC), a comparative study of Bi1.8Pb0.3Sr1.9Ca2Cu3O (x) (BSCCO) and YBa2Cu3O7-delta (YBCO) have been performed. Magnetoresistive effects and irreversibility line obtained from magnetic measurements have been studied. It was established that (1) for YBCO, the smooth part of R(T) dependence unambiguously corresponds to dissipation in the intergrain boundaries for arbitrary magnetic fields; (2) for polycrystalline BSCCO, the smooth part of R(T) dependences correspond to dissipation within intergrain boundary subsystem in the field range H 10(2) Oe only, while standard measurements of R(T) dependences in magnetic field range H 10(2) Oe reflect the dissipation processes occurring both in intergrain boundary and HTSC grain subsystems; (3) for the high-field range, the contribution from intergrain boundaries of BSCCO can be distinguished from magnetoresistance R(H) dependences obtained at high enough current density on textured samples. It is proposed that various magneto-resistive properties of these classical HTSC systems are due comparatively weak pinning in BSCCO.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shaykhutdinov K. A., Balaev D. A., Semenov S. V., Popkov S. I., Dubrovskiy A. A., Sapronova N. V., Volkov N. V.
Заглавие : Relaxation of low-temperature magnetoresistance and magnetization of polycrystalline (La0.5Eu0.5)(0.7)Pb0.3MnO3
Разночтения заглавия :авие SCOPUS: Relaxation of low-temperature magnetoresistance and magnetization of polycrystalline (La 0.5Eu 0.5) 0.7Pb 0.3MnO 3
Место публикации : J. Phys. D. - 2011. - Vol. 44, Is. 25. - Ст.255001. - ISSN 0022-3727, DOI 10.1088/0022-3727/44/25/255001
Примечания : Cited References: 34. - This work was partially supported by the Lavrentyev Competition of the Young Scientist's Projects of the Siberian Branch of the Russian Academy of Sciences, Project No 12. The authors are grateful to A D Balaev and V M Sosnin for useful discussions on the results.
Предметные рубрики: INSULATOR-METAL TRANSITION
GRANULAR FILMS
NANOPARTICLES
PR0.7CA0.3MNO3
PERCOLATION
MANGANITES
Ключевые слова (''Своб.индексиров.''): antiferromagnetic boundaries--characteristic value--ferromagnetic domains--ferromagnetic metal--lanthanum manganites--logarithmic law--low temperatures--magneto-resistive effect--polycrystalline--relative orientation--relaxation of magnetization--temperature fluctuation--time evolutions--time interval--tunnel magnetoresistance--antiferromagnetism--electric resistance--europium--ferromagnetic materials--ferromagnetism--grain boundaries--grain size and shape--lanthanum compounds--lead--magnetic domains--magnetic moments--magnetoelectronics--magnetoresistance--manganese oxide--magnetization
Аннотация: Hysteresis and relaxation of magnetoresistance and magnetization of substituted (La0.5Eu0.5)(0.7)Pb0.3MnO3 lanthanum manganite in a low-temperature region ( 40 K) are investigated. It is shown that at these temperature features of the magnetoresistive effect are determined mainly by spin-dependent tunnelling of carriers via insulating grain boundaries. As was demonstrated previously, the grain boundaries may be antiferromagnetically ordered. Therefore, relaxation of magnetization and resistance is determined by the processes of relative orientation of the magnetic moments of ferromagnetic domains neighbouring the antiferromagnetic boundary of ferromagnetic domains under the action of temperature fluctuations. It is shown that relaxation follows the logarithmic law within the time interval t similar to 10(2)-3x10(3) s. A comparison between time evolutions of the magnetic moment and resistance shows that magnetoresistance and magnetization are related as delta R
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