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Bondarev, I. A.
Transport properties of the La0.75Ca0.25MnO3 manganite [Текст] / I. A. Bondarev, N. V. Volkov // RACIRI Summer School : Book of abstracts. - 2013. - P. 18

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Бондарев, Илья Александрович; RACIRI Summer School(17−25 August, 2013 ; Peterhof, Russia)
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Correlation between magneto-optical and transport properties of Sr doped manganite films / Y. E. Samoshkina [et al.] // J. Alloys Compd. - 2019. - Vol. 782. - P. 334-342, DOI 10.1016/j.jallcom.2018.12.158. - Cited References: 51. - The authors are grateful to A.V. Malakhovskii (Kirensky Institute of Physics, Federal Research Center KSC SB RAS) for fruitful discussions of the magneto-optics data and V.I. Chichkov and N.V. Andreev (National University of Science and Technology MISiS) for the preparation of the manganite films. The work was supported partly by Russian Academy of Sciences , [grant number 0356-2017-0030 ], and the Russian Foundation for Basic Research , [grant number 16-32-00209 ]. . - ISSN 0925-8388
Кл.слова (ненормированные):
Thin films -- Manganites -- Crystal structure -- Electrical transport -- Electronic properties -- Magnetic circular dichroism
Аннотация: The features of electronic structure of La0.7Sr0.3MnO3 Pr0.8Sr0.2MnO3, and Pr0.6Sr0.4MnO3 polycrystalline films of different thickness have been investigated using magnetic circular dichroism (MCD) in the range of 1.1–4.2 eV. The temperature behavior of the samples electrical resistance were also has been studied. It was found that films with high Sr content (0.3 and 0.4) act as high-temperature semiconductors, while the maximum in the temperature dependences of resistivity these films indicates the transition of the samples to the metallic state at some temperature TM-S, which is different for different sample thickness. The films with the lower Sr content (0.2) act as insulators in the used temperature range. The MCD spectra have been decomposed to the Gaussian-shaped lines, and the temperature dependence of intensity of each line has been analyzed in comparison with temperature dependence of the films magnetization and with their electric conductivity type. Different temperature behavior of the intensity of four specified Gaussian-lines was revealed for semiconductor films. In the case of insulating Pr0.8Sr0.2MnO3 samples, the intensity of three specified Gaussian lines changes with the temperature in the same way as the magnetization changed. It was established that the lanthanide (La, Pr) type does not affect the MCD spectra shape for the films with the same electrical conductivity type. Besides, the correlation between the MCD data of the films and their conductivity type was revealed. Due to the detailed analysis of the specified Gaussian lines with taking into account the well-known in the literature absorption bands, lying outside the studied spectral region, the MCD bands for the studied manganite films have been identified with electronic transitions of a different nature.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Samoshkina, Yu. E.; Самошкина, Юлия Эрнестовна; Edelman, I. S.; Эдельман, Ирина Самсоновна; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Molokeev, M. S.; Молокеев, Максим Сергеевич
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Current channel switching in the manganite-based multilayer structure / N. Volkov, E. Eremin [et al.] // 18th International Conference on Magnetism (ICM-2009). - 2009. - Ст. Mo-A-5.1-03

Доп.точки доступа:
Volkov, N.; Eremin, E.; Patrin, G.; Kim, P.; Yu, Seong-Cho; Dong-Hyun, Kim; Nguyen, Chau; International Conference on Magnetism(18 ; 2009 ; July 26-31 ; Karlsruhe, Germany)
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Current channel switching in the manganite-based multilayer structure / N. V. Volkov [et al.] // J. Phys. Conf. Ser. - 2010. - Vol. 200, Is. SECTION 5, DOI 10.1088/1742-6596/200/5/052031 . - ISSN 1742-6588
Кл.слова (ненормированные):
Channel switching -- Current in planes -- Magnetic tunnel junction -- Magnetoresistive -- Manganese silicide -- Multilayer structures -- Optical radiations -- Potential barriers -- Lanthanum -- Magnetic fields -- Manganese -- Silicides -- Transport properties -- Tunnel junctions -- Manganese oxide
Аннотация: The transport properties of the structure La0.7Sr 0.3MnO3/depleted manganite layer/MnSi have been studied. The depleted manganite layer serves as a potential barrier between the ferromagnetic conducting La0.7Sr0.3MnO3 and MnSi layers by forming a magnetic tunnel junction. The study in the CIP (current-in-plane) geometry has revealed the effect of current channel switching between the manganite layer and the manganese silicide layer with higher conductivity. The effect is controlled by bias current, magnetic field, and optical radiation. Such switching is responsible for the features of the transport properties and the magnetoresistive and photovoltaic effects in the structure. © 2010 IOP Publishing Ltd.

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Держатели документа:
Kirensky Institute of Physics SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Institute of Engineering Physics and Radio Electronics, Krasnoyarsk, 660041, Russian Federation
Chungbuk National University, Department of Physics, Cheongju, 361-763, South Korea

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Patrin, G. S.; Патрин, Геннадий Семёнович; Kim, P. D.; Ким, Пётр Дементьевич; Seong-Cho, Y.; Kim, D. -H.; Chau, N.
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Current-driven channel switching and colossal positive magnetoresistance in the manganite-based structure / N. V. Volkov [et al.] // J. Phys. D. - 2009. - Vol. 42, Is. 6. - Ст. 65005, DOI 10.1088/0022-3727/42/6/065005. - Cited References: 20. - This study was supported by the RFBR, Projects No 08-02-00259-a and 08-02-00397-a, the KRSF-RFBR 'Enisey-2007', Project No 07-02-96801-a and the Division of Physical Sciences of RAS, Program 'Spin-dependent Effects in Solids and Spintronics' (Project No 2.4.2 of SB RAS). . - ISSN 0022-3727

РУБ Physics, Applied

Кл.слова (ненормированные):
Colossal magnetoresistance -- Electric resistance -- Electronic structure -- Magnetic field effects -- Magnetoelectronics -- Manganese -- Manganites -- Oxide minerals -- Schottky barrier diodes -- Semiconductor junctions -- Silicides -- Tunnel junctions -- Tunnels -- Bottom layers -- Channel switching -- Conducting channels -- Conducting layers -- Current-driven -- Current-in-plane geometries -- Depletion layers -- Ferromagnetic state -- Layered structures -- Low-resistance contacts -- Magnetic tunnel junctions -- Magneto-transport properties -- Manganese silicides -- Manganite films -- New mechanisms -- Positive magnetoresistances -- Positive MR -- Potential barriers -- Spin-polarized -- Tunnel structures -- Voltage-current characteristics -- Current voltage characteristics
Аннотация: The transport and magnetotransport properties of a newly fabricated tunnel structure manganite/depletion layer/manganese silicide have been studied in the current-in-plane (CIP) geometry. A manganite depletion layer in the structure forms a potential barrier sandwiched between two conducting layers, one of manganite and the other of manganese silicide. The voltage-current characteristics of the structure are nonlinear due to switching conducting channels from an upper manganite film to a bottom, more conductive MnSi layer with an increase in the current applied to the structure. Bias current assists tunnelling of a carrier across the depletion layer; thus, a low-resistance contact between the current-carrying electrodes and the bottom layer is established. Below 30 K, both conducting layers are in the ferromagnetic state (magnetic tunnel junction), which allows control of the resistance of the tunnel junction and, consequently, switching of the conducting channels by the magnetic field. This provides a fundamentally new mechanism of magnetoresistance (MR) implementation in the magnetic layered structure with CIP geometry. MR of the structure under study depends on the bias current and can reach values greater than 400% in a magnetic field lower than 1 kOe. A positive MR value is related to peculiarities of the spin-polarized electronic structures of manganites and manganese silicides.

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Держатели документа:
[Volkov, N. V.
Eremin, E. V.
Tsikalov, V. S.
Patrin, G. S.
Kim, P. D.] SB RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
[Volkov, N. V.
Patrin, G. S.] Siberian Fed Univ, Dept Phys, Krasnoyarsk 660041, Russia
[Seong-Cho, Yu
Kim, Dong-Hyun] Chungbuk Natl Univ, Dept Phys, Cheongju 361763, South Korea
[Chau, Nguyen] Natl Univ Hanoi, Ctr Mat Sci, Hanoi, Vietnam
ИФ СО РАН
Kirensky Institute of Physics, SB RAS, Krasnoyarsk 660036, Russian Federation
Department of Physics, Siberian Federal University, Krasnoyarsk 660041, Russian Federation
Department of Physics, Chungbuk National University, Cheongju 361-763, South Korea
Center for Materials Science, National University of Hanoi, 334 Nguyen Trai, Hanoi, Viet Nam

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Tsikalov, V. S.; Patrin, G. S.; Патрин, Геннадий Семёнович; Kim, P. D.; Ким, Пётр Дементьевич; Seong-Cho, Y.; Kim, D. H.; Chau, N.; RFBR [08-02-00259-a, 08-02-00397-a]; KRSF-RFBR [07-02-96801-a]; Division of Physical Sciences of RAS; Program 'Spin-dependent Effects in Solids and Spintronics' [2.4.2]
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    Features of magnetic and magneto-optical properties of lanthanum manganite microparticles / R. D. Ivantsov, M. M. Mikhailov, I. S. Edelman, G. Yu. Yurkin // The Sixth Asian school-conference on physics and technology of nanostructured materials : Proceedings. - VLadivostok, 2022. - Ст. III.o.06. - P. 128. - Cited References: 1 . - ISBN 987-5-8044-1716-2
   Перевод заглавия: Особенности магнитных и магнитооптических свойств микрочастиц манганита лантана
Аннотация: For La1-xSrxMnO3 powders prepared by the solid-phase reaction method using various thermal regimes and x values, the temperature dependences of magnetization, circular magnetic dichroism (MCD), and diffuse reflectance spectra were studied. The powders synthesis at temperatures of 800–900 °C for 2 h leads to the formation of a multiphase state. The higher temperatures and duration of synthesis lead to the formation of two predominant magnetic phases with the Curie temperature (TC) of about 250 and 360 K. Correlation is established between magnetic states of the powder and the shape of the diffuse reflection spectra. The strong red shift of the MCD spectrum for the La1-xSrxMnO3 powder is revealed comparing to the MCD spectra of La1-xSrxMnO3 films available in literature.

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Держатели документа:
Kirensky Institute of Physics, FRC KSC SB RAS
Tomsk State University of Control System & Radioelectronics
Siberian Federal University

Доп.точки доступа:
Ivantsov, R. D.; Иванцов, Руслан Дмитриевич; Mikhailov, M. M.; Edelman, I. S.; Эдельман, Ирина Самсоновна; Yurkin, G. Yu.; Юркин, Глеб Юрьевич; Asian School-Conference on Physics and Technology of Nanostructured Materials(6 ; 2022 ; Apr. 25-29 ; Vladivostok); Азиатская школа-конференция по физике и технологии наноструктурированных материалов(6 ; 2022 ; 25-29 апр. ; Владивосток)
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Features of the magnetic properties of La0.7Sr0.3MnO3 manganite films obtained by an extraction-pyrolysis method / G. S. Patrin [et al.] // Tech. Phys. Lett. - 2007. - Vol. 33, Is. 4. - P. 330-332, DOI 10.1134/S1063785007040177. - Cited References: 12 . - ISSN 1063-7850

РУБ Physics, Applied
Рубрики:
PHASE-SEPARATION
MAGNETORESISTANCE
Аннотация: We have experimentally studied the magnetic properties of manganite films obtained for first time using an extraction-pyrolysis technique. It is established that the characteristics of samples significantly depend on the conditions of final annealing. The annealing at temperatures T-a 970 K is accompanied by strong thermomagmetic effects. and the resulting films possess properties similar to those of spin glasses. When the annealig temperature is increased to T-a = 1020 K, the films exhibit magnetic properties typical of ferromagnetic systems.

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Держатели документа:
Russian Acad Sci, Siberian Div, Kirensky Inst Phys, Krasnoyarsk 660036, Russia
Krasnoyarsk State Univ, Krasnoyarsk 660041, Russia
Krasnoyarsk State Polytech Univ, Krasnoyarsk 660062, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Patrin, G. S.; Патрин, Геннадий Семёнович; Polyakova, K. P.; Полякова, Клавдия Павловна; Patrusheva, T. N.; Патрушева, Тамара Николаевна; Velikanov, D. A.; Великанов, Дмитрий Анатольевич
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    Features of the magneto-optical response in manganite films / Yu. E. Samoshkina [et al.] // Moscow International Symposium on Magnetism (MISM-2017) : 1-7 July 2017 : book of abstracts. - 2017. - Ст. 5PO-K3-2. - P. 1093
   Перевод заглавия: Особенности магнитооптического отклика в пленках манганита

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Доп.точки доступа:
Samoshkina, Yu. E.; Самошкина, Юлия Эрнестовна; Edelman, I. S.; Эдельман, Ирина Самсоновна; Sokolov, A. Е.; Соколов, Алексей Эдуардович; Molokeev, M. S.; Молокеев, Максим Сергеевич; Maximova, O. A.; Максимова, Ольга Александровна; Andreev, N. V.; Андреев Н. В.; Chichkov, V. I.; Чичков В.И.; Moscow International Symposium on Magnetism(7 ; 2017 ; Jul. ; Moscow); Московский государственный университет им. М.В. Ломоносова; Российский фонд фундаментальных исследований
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Formation of ferromagnetic germanides by solid-state reactions in 20Ge/80Mn films / V. G. Myagkov [et al.] // Thin Solid Films. - 2014. - Vol. 552. - P. 86-91, DOI 10.1016/j.tsf.2013.12.029. - Cited References: 53 . - ISSN 0040-6090

РУБ Materials Science, Multidisciplinary + Materials Science, Coatings & Films + Physics, Applied + Physics, Condensed Matter
Рубрики:
PHASE-FORMATION
   MAGNETIC-PROPERTIES
   Mn5Ge3 FILMS
   X-RAY
   Ge(111)
   TRANSFORMATIONS
   DIFFUSION
   SPECTRA
   SYSTEM
   LAYERS
Кл.слова (ненормированные):
Manganite-germanium -- Solid state reaction -- First phase -- Mn5Ge3 alloy -- Carbon impurity -- Oxygen impurity -- Annealing -- Magnetic anisotropy
Аннотация: Solid state reactions between Ge and Mn films are systematically examined using X-ray diffraction, photoelectron spectroscopy, and magnetic and electrical measurements. The films have a nominal atomic ratio Ge:Mn = 20:80 and are investigated at temperatures from 50 to 500 °C. It is established that after annealing at ~ 120°C, the ferromagnetic Mn5Ge3 phase is the first phase to form at the 20Ge/80Mn interface. As the annealing temperature increases to 300°C, the weak magnetic Mn5Ge 2 + Mn3Ge phases simultaneously begin to grow and they become dominant at 400°C. Increasing the annealing temperature to 500°C leads to the formation of the ferromagnetic phase with a Curie temperature TC ~ 350-360 K and magnetization 14-25 kA/m at room temperature. The X-ray diffraction study of the samples shows the reflections from the Mn 5Ge3 phase, and the photoelectron spectra contain the oxygen and carbon peaks. The homogeneous distribution of oxygen and carbon over the sample thickness suggests that the increased Curie temperature and magnetization are related to the migration of C and O atoms into the Mn 5Ge3 lattice and the formation of the Nowotny phase Mn5Ge3CxOy. The initiation temperature (~ 120 C) is the same in the Mn5Ge3 phase with the solid-state reactions in the Ge/Mn films as well as in the phase separation in the GexMn1 - x diluted semiconductors. Thus, we conclude that the synthesis of the Mn5Ge3 phase is the moving force for the spinodal decomposition of the GexMn 1 - x diluted semiconductors.

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
Russian Acad Sci, Inst Chem & Chem Technol, Siberian Branch, Krasnoyarsk 660049, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia

Доп.точки доступа:
Myagkov, V. G.; Мягков, Виктор Григорьевич; Zhigalov, V. S.; Жигалов, Виктор Степанович; Matsynin, A. A.; Мацынин, Алексей Александрович; Bykova, L. E.; Быкова, Людмила Евгеньевна; Mikhlin, Y. L.; Bondarenko, G. N.; Бондаренко, Галина Николаевна; Patrin, G. S.; Патрин, Геннадий Семёнович; Yurkin, G. Yu.; Юркин, Глеб Юрьевич
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10.

Inverse and direct magnetoelectric effects in orthorhombic DyMnO3 manganite single crystals / A. L. Freidman, S. V. Semenov, M. I. Kolkov [et al.] // J. Appl. Phys. - 2020. - Vol. 128, Is. 9. - Ст. 094102, DOI 10.1063/5.0006595. - Cited References: 27. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research project "Research, synthesis and investigation of new oxide single crystals showing the interrelation of magnetic, magnetoelastic and magnetoelectric properties" (Project No. 18-42-243024). The measurements were performed in part on the equipment at the Krasnoyarsk Territorial Center for Collective Use, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences . - ISSN 0021-8979. - ISSN 1089-7550

РУБ Physics, Applied

Аннотация: Correlations between the direct and inverse magnetoelectric effects in orthorhombic DyMnO3 single crystals have been investigated. In the inverse magnetoelectric effect, the magnetic moment of the crystal appears to have a contribution that is sinusoidal oscillating in ac electric fields below the temperature TFE of ferroelectric phase transition. The first and the second harmonics of the inverse magnetoelectric effect are clearly detected. The magnetoelectric susceptibilities α and β, corresponding to first and second harmonics, are found to correlate with the derivative of polarization with respect to the magnetic field. The influence of the magnetic and electric regimes during cooling on magnetoelectric effects has also been studied. The maximum change in the magnetic moment of a sample under the action of electric fields is observed under the same (T, H) conditions as the rotation of the spontaneous polarization vector from the crystallographic c direction to the a axis in the magnetic field H || b.

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Держатели документа:
RAS, Fed Res Ctr KSC SB, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Freidman, A. L.; Фрейдман, Александр Леонидович; Semenov, S. V.; Семёнов, Сергей Васильевич; Kolkov, M. I.; Колков, Максим Игоревич; Terent'ev, K. Yu.; Терентьев, Константин Юрьевич; Pavlovskiy, N. S.; Павловский, Николай Сергеевич; Gokhfeld, D. M.; Гохфельд, Денис Михайлович; Shaykhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Balaev, D. A.; Балаев, Дмитрий Александрович; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science [18-42-243024]
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