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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Maximova O. A., Lyashchenko S. A., Tarasov I. A., Yakovlev I. A., Mikhlin Y., Varnakov S. N., Ovchinnikov S. G.
Заглавие : The magneto-optical Voigt parameter from magneto-optical ellipsometry data for multilayer samples with single ferromagnetic layer
Коллективы : Нанофизика и наноэлектроника, международный симпозиум
Место публикации : Нанофизика и наноэлектроника, международный симпозиум (XXV ; 9-12 марта 2021 ; Нижний Новгород). Физика твердого тела. - 2021. - Т. 63, Вып. 9. - С.1311. - ISSN 0367-3294
Примечания : The research was supported by the government of the Russian Federation, agreement No. 075-15-2019-1886
Аннотация: Calculations of the magneto-optical Voigt parameter Q were carried out using various models of reflecting media for thin films Fe|SiO2|Si(100) samples using the data of the in situ magneto-ellipsometry. The obtained spectral dependences of Q make it possible to choose the algorithm for the analysis of experimental magneto-ellipsometry data and demonstrate that magneto-optical parameter Q of iron is thickness-dependent.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Gokhfeld D. M., Maksimova A. N., Kashurnikov V. A., Moroz A. N.
Заглавие : Trapped field in perforated superconductors
Коллективы : International Workshop on Processing and Applications of Superconducting Bulk Materials
Место публикации : 12th International workshop on processing and applications of superconducting bulk materials (PASREG 2021): program and abstracts. - 2021. - Ст.F-III-1
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volova T. G., Golubev A. I., Nemtsev I. V., Lukyanenko A. V., Dudaev A. E., Shishatskaya E. I.
Заглавие : Laser processing of polymer films fabricated from phas differing in their monomer composition
Место публикации : Polymers. - 2021. - Vol. 13, Is. 10. - Ст.1553. - ISSN 20734360 (ISSN), DOI 10.3390/polym13101553
Примечания : Cited References: 87. - This work was supported by the Russian Foundation for Basic Research/Regional State Autonomous Institution “Krasnoyarsk Regional Fund for the Support of Scientific and Scientific-Technical Activities” foundations under Grant number 19-43-240012 (laser treatment and films properties) and by the State Assignment of the Ministry of Science and Higher Education of the Russian Federation No. FSRZ-2020-0006 (polymer synthesis)
Аннотация: The study reports results of using a CO2-laser in continuous wave (3 W; 2 m/s) and quasi-pulsed (13.5 W; 1 m/s) modes to treat films prepared by solvent casting technique from four types of polyhydroxyalkanoates (PHAs), namely poly-3-hydroxybutyrate and three copolymers of 3-hydroxybutyrate: with 4-hydroxybutyrate, 3-hydroxyvalerate, and 3-hydroxyhexanoate (each second monomer constituting about 30 mol.%). The PHAs differed in their thermal and molecular weight properties and degree of crystallinity. Pristine films differed in porosity, hydrophilicity, and roughness parameters. The two modes of laser treatment altered these parameters and biocompatibility in diverse ways. Films of P(3HB) had water contact angle and surface energy of 92° and 30.8 mN/m, respectively, and average roughness of 144 nm. The water contact angle of copolymer films decreased to 80–56° and surface energy and roughness increased to 41–57 mN/m and 172–290 nm, respectively. Treatment in either mode resulted in different modifications of the films, depending on their composition and irradiation mode. Laser-treated P(3HB) films exhibited a decrease in water contact angle, which was more considerable after the treatment in the quasi-pulsed mode. Roughness parameters were changed by the treatment in both modes. Continuous wave line-by-line irradiation caused formation of sintered grooves on the film surface, which exhibited some change in water contact angle (76–80°) and reduced roughness parameters (to 40–45 mN/m) for most films. Treatment in the quasi-pulsed raster mode resulted in the formation of pits with no pronounced sintered regions on the film surface, a more considerably decreased water contact angle (to 67–76°), and increased roughness of most specimens. Colorimetric assay for assessing cell metabolic activity (MTT) in NIH 3T3 mouse fibroblast culture showed that the number of fibroblasts on the films treated in the continuous wave mode was somewhat lower; treatment in quasi-pulsed radiation mode caused an increase in the number of viable cells by a factor of 1.26 to 1.76, depending on PHA composition. This is an important result, offering an opportunity of targeted surface modification of PHA products aimed at preventing or facilitating cell attachment.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Romanova O. B., Aplesnin S. S., Sitnikov M. N., Udod L. V., Kharkov A. M.
Заглавие : Magnetoresistance and magnetoimpedance in holmium manganese sulfides
Коллективы : Russian Foundation for Fundamental InvestigationsRussian Foundation for Basic Research (RFBR) [20-42-243002]
Место публикации : Appl. Phys. A. - 2022. - Vol. 128, Is. 2. - Ст.124. - ISSN 0947-8396, DOI 10.1007/s00339-021-05198-x. - ISSN 1432-0630(eISSN)
Примечания : Cited References: 46. - Funding was provided by Russian Foundation for Fundamental Investigations (20-42-243002)
Предметные рубрики: PHASE-SEPARATION
IMPEDANCE
Аннотация: The structure, transport characteristics, real and imaginary parts of the impedance components and electric polarization of the HoXMn1-XS (X = 0.1 and 0.2) system have been investigated in the temperature range of 80-500 K in magnetic fields of up to 12 kOe. The morphology of synthesized samples has been studied. The influence of the magnetic field on the transport characteristics, on both direct and alternating currents of holmium manganese sulfides, have been established. The negative effects of DC magnetoresistance in the region of the magnetic phase transition and positive AC magnetoimpedance up to 4% in the paramagnetic region have been established. The critical temperatures of the existence of the electric polarization have been determined. At a substitution concentration of X = 0.1, the activation character of the relaxation time versus temperature has been found. The diffusion contribution for the composition with X = 0.2 has been established by the impedance hodograph.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Maximova O. A., Lyashchenko S. A., Tarasov I. A., Yakovlev I. A., Mikhlin Y., Varnakov S. N., Ovchinnikov S. G.
Заглавие : The magneto-optical Voigt parameter from magneto-optical ellipsometry data for multilayer samples with single ferromagnetic layer
Место публикации : Phys. Solid State. - 2021. - Vol. 63. Is. 10. - P.1485-1495. - ISSN 1063-7834 (ISSN), DOI 10.1134/S1063783421090274. - ISSN 1090-6460 (eISSN)
Примечания : Cited References: 58. - The research was supported by the government of the Russian Federation (agreement no. 075-15-2019-1886)
Аннотация: Calculations of the magneto-optical Voigt parameter Q were carried out using various models of reflecting media for thin films Fe|SiO2|Si(100) samples using the data of the in situ magneto-ellipsometry. The obtained spectral dependences of Q make it possible to choose the algorithm for the analysis of experimental magneto-ellipsometry data and demonstrate that magneto-optical parameter Q of iron is thickness-dependent.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volova T. G., Golubev A. I., Nemtsev I. V., Lukyanenko A. V., Dudaev A. E., Shishatskaya E. I.
Заглавие : Laser processing of polymer films fabricated from phas differing in their monomer composition
Коллективы : "Biotechnology of new materials - environment - quality of life", International scientific conference, "Биотехнология новых материалов - окружающая среда - качество жизни", международная научная конференция
Место публикации : Биотехнология новых материалов - окружающая среда - качество жизни: материалы IV Международной научной конференция : Красноярск, 10–13 октября 2021 г. - Красноярск, 2021. - С. 51-54
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Nemtsev I. V., Shabanova, Olga V., Shestakov N. P., Cherepakhin A. V., Zyryanov V. Ya.
Заглавие : Morphology stability of polymethylmethacrylate nanospheres formed in water-acetone dispersion medium
Место публикации : Appl. Phys. A. - 2019. - Vol. 125, Is. 10. - Ст.738. - ISSN 0947-8396, DOI 10.1007/s00339-019-3036-4. - ISSN 1432-0630(eISSN)
Примечания : Cited References: 93
Предметные рубрики: OPAL PHOTONIC CRYSTALS
POLY(METHYL METHACRYLATE)
UP-CONVERSION
Аннотация: The aim of this study is to develop a manufacturing technique of polymethylmethacrylate (PMMA) nanospheres to produce a more stable opal template. Water-acetone mixture was used as a dispersion medium to synthesize a PMMA opal structure. Morphology features, IR vibrational spectra and glass transition temperatures of the PMMA nanospheres formed in the water-acetone dispersion medium (nanospheres A) have been studied comparing with the same prepared in distilled water solution without acetone (nanospheres B). A dependence of a shrinkage degree of the nanoparticles on the acetone volume has been investigated. It has been revealed that under an electron beam action the shrinkage degree of the nanospheres A is in the range of 7-16% while the shrinkage of the nanospheres B is 18-25% at the same conditions. The nanospheres A are less flexible and soft as compared to the nanospheres B. Additionally, an ability of the PMMA nanoparticles fabricated in the water-acetone dispersion medium to form the ordered opal structures is demonstrated to be the similar to the nanospheres B.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tanwar, Manushree, Yogi, Priyanka, Lambora, Simran, Mishra, Suryakant, Saxena, Shailendra K., Sagdeo, Pankaj R., Krylov A. S., Kumar, Rajesh
Заглавие : Generalisation of phonon confinement model for interpretation of Raman line-shape from nano-silicon
Место публикации : Adv. Mater. Process. Technol. - 2018. - Vol. 4, Is. 2. - P.227-233. - ISSN 2374-068X, DOI 10.1080/2374068X.2017.1413527
Примечания : Cited References: 32. - This work was supported by the Department of Science and Technology (DST), Government of India; Science and Engineering Research Board.
Ключевые слова (''Своб.индексиров.''): silicon nanomaterial--raman line-shape--phonon--quantum confinement
Аннотация: A comparative analysis of two Raman line-shape functions has been carried out to validate the true representation of experimentally observed Raman scattering data for semiconducting nanomaterials. A modified form of already existing phonon confinement model (PCM) incorporates two basic considerations, phonon momentum conservation and shift in zone centre phonon frequency. After incorporation of the above mentioned two factors, a rather symmetric Raman line-shape is generated which is in contrary to the usual asymmetric Raman line-shapes obtained from nanostructured semiconductor. By fitting an experimentally observed Raman scattering data from silicon nanostructures, prepared by metal induced etching, it can be established that the Raman line-shape obtained within the framework of PCM is a true representative Raman line-shape of sufficiently low dimensions semiconductors.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Maximova O. A., Lyashchenko S. A., Shevtsov D. V., Yakovlev I. A., Ovchinnikov S. G.
Заглавие : Development of techniques for processing data from magneto-ellipsometry measurements
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials, Азиатская школа-конференция по физике и технологии наноструктурированных материалов, Институт автоматики и процессов управления ДВО РАН, Дальневосточный федеральный университет
Место публикации : Fourth Asian school-conference on physics and technology of nanostructured materials (ASCO-NANOMAT 2018): proceedings/ progr. com. S. G. Ovchinnikov [et al.]. - 2018. - Ст.IV.25.05p. - P.180. - ISBN 978-5-7444-4368-9
Аннотация: The approach to data processing for layered thin films with a ferromagnet layer is proposed for studying optical and magneto- optical properties. The scope and applicability of models which describe reflective layered structures are studied in order to recommend the best model choice for each case. A significant effect of penetration depth on this choice was observed.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Tarasov A. S., Bondarev M. A., Nikolskaya A. A., Vasiliev V. K., Volochaev M. N., Volkov N. V.
Заглавие : Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect
Место публикации : Mater. Sci. Semicond. Process. - 2021. - Vol. 126. - Ст.105663. - ISSN 13698001 (ISSN), DOI 10.1016/j.mssp.2021.105663
Примечания : Cited References: 21. - This study was supported by the Government of the Russian Federation , Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886)
Аннотация: A silicon structure doped with Ga using ion implantation has been investigated by admittance spectroscopy. It has been established that the presence of the Ga impurity, along with the B one, in the silicon structure leads to the appearance of the second peak in the temperature dependence of the real part of the impedance (admittance). Moreover, switching-on a magnetic field parallel to the sample plane shifts the singularities in the temperature curve to the high-temperature region. This results in the manifestation of both the positive and negative magnetoresistance effect upon temperature and magnetic field variation. It has been found by the standard admittance spectroscopy analysis of the impedance data that the energy structure of the investigated sample includes two interfacial energy levels ES1(0) = 42 meV and ES2(0) = 69.4 meV. As expected, these energies are consistent with the energies of B and Ga dopants. In a magnetic field, these levels increase by 3 meV for B and 2 meV for Ga, which induces the magnetoresistance effect. It has been demonstrated that the interfacial state-induced magnetoresistance effect can be tuned by ion implantation and dopant selection.
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