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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Ma, Yibiao, Li, Siying, Wei, Jiaqi, Quan, Beibei, Liao, Weifang, Molokeev M. S., Cheng, Ming, Chen, Xiaoyan, Zhou, Zhi, Xia, Mao
Заглавие : Spectroscopically enhanced far-red phosphor Li2Mg3TiO6: Cr3+ and its application prospects to cold resistance of rice
Колич.характеристики :9 с
Место публикации : Mater. Adv. - 2023. - Vol. 4, Is. 22. - P.5808-5816. - ISSN 26335409 (eISSN), DOI 10.1039/D3MA00654A
Примечания : Cited References: 41. - This work was supported by the National Natural Science Foundation of China (Grant No. 51974123), the Key R & D Projects in Hunan Province (2021SK2047, 2022NK2044), the Natural Science Foundation of Hunan Province, China (Grant No. 2021JJ40261), Wangcheng Science and Technology Plan (KJ221017), the science and technology innovation Program of Hunan Province (2022WZ1022). The work was supported by the Ministry of Science and Higher Education of the Russian Federation as part of World-class Research Center program: “Advanced Digital Technologies”, contract no. 075-15-2020-935
Аннотация: Chemical unit co-substitution is a very effective strategy to improve the properties of phosphors. Due to the mismatch of the radii between substituted ions, unexpected properties are usually produced. Such properties are of profound significance to expand the research field. In this study, Mg2+-Ti4+ in Li2Mg3TiO6: Cr3+ was replaced by Al3+-Al3+ and Ga3+-Ga3+, while charge balance was maintained. Ion substitution changed the crystal field environment of activator ion, which increased the luminescence intensity by 180% and 184% respectively, accompanied by a slight decrease in thermal stability. In addition, the quantum efficiency was increased from 35.1% to 73.1%. The electroluminescence spectrum of the encapsulated pc-LED was examined, and the overlap with the absorption profile of the phytochrome Pfr was 61%. In order to verify the application prospect of far-red phosphor. A 15-day rice growth experiment was set up to detect surface traits, soluble sugars, soluble proteins, and the expression of OsphyA and OsCBF3 genes. It was demonstrated that rice under far-red light irradiation had significant resistance enhancement.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Korovushkin M. M.
Заглавие : Electrical resistivity and the Hall effect in the doped Mott-Hubbard material with strong spin-charge coupling
Колич.характеристики :14 с
Место публикации : Phys. Scr. - 2023. - Vol. 98, Is. 12. - Ст.125922. - ISSN 00318949 (ISSN), DOI 10.1088/1402-4896/ad05ed. - ISSN 14024896 (eISSN)
Примечания : Cited References: 96. - Author is grateful to V V Val’kov, A D Fedoseev, D M Dzebisashvili and M S Shustin for fruitful discussions and permanent interest in this work. Author thanks V A Mitskan and A O Zlotnikov for technical support
Аннотация: The kinetic characteristics of the doped Mott-Hubbard material are considered within the realistic spin-fermion model which takes into account the strong spin-charge coupling. The kinetic equation constructed on the basis of the mechanism of carrier scattering on the spin fluctuations is solved using the multi-moment method, which allows one to analyze the temperature behavior of nonequilibrium distribution function in the problems of electrical resistivity ρ and the Hall coefficient RH. The calculated dependences ρ(T) and RH(T) for the underdoped and optimally doped regimes demonstrate good qualitative agreement with the experimental data. In particular, the Hall coefficient calculated for the underdoped regime reproduces the experimentally observed sharp drop and even a change in sign at low temperatures.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Tarasov A. S., Shanidze, Lev, Bondarev I. A., Baron F. A., Lukyanenko A. V., Yakovlev I. A., Volochaev M. N., Volkov N. V.
Заглавие : Effect of magnetic and electric fields on the AC resistance of a silicon-on-insulator-based transistor-like device
Коллективы : RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240013]; Government of the Russian Federation; Mega-grant for the Creation of Competitive World-Class Laboratories [075-15-2019-1886]
Место публикации : Phys. Status Solidi A. - 2022. - Vol. 219. Is. 1. - Ст.2100459. - ISSN 1862-6300, DOI 10.1002/pssa.202100459. - ISSN 1862-6319(eISSN)
Примечания : Cited References: 19. - The authors thank the Krasnoyarsk Territorial Center for Collective Use, Krasnoyarsk Scientific Center of the SB RAS, for electron microscope investigations. This study was supported by RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science, projects nos. 20-42-243007 and 20-42-240013, and by the Government of the Russian Federation, the Mega-grant for the Creation of Competitive World-Class Laboratories, agreement no. 075-15-2019-1886
Предметные рубрики: NANOSTRUCTURES
Аннотация: Herein, the AC magnetoresistance (MR) in the silicon-on-insulator (SOI)-based Fe/Si/SiO2/p-Si structure is presented. The structure is used for fabricating a back-gate field-effect pseudo-metal-oxide-semiconductor field-effect transistor (MOSFET) device. The effects of the magnetic field and gate voltage on the transport characteristics of the device are investigated. Magnetoimpedance value of up to 100% is obtained due to recharging of the impurity and surface centers at the insulator/semiconductor interface. A resistance variation of up to 1000% is found, which is caused by the voltage applied to the gate and the field effect on the band structure of the sample. Combining the magnetic and electric fields, one can either change the absolute value of the AC resistance while having the MR fixed or change the sign and character of the field dependence of the MR. The observed effects can be used in the development of magnetic-field-driven SOI-based devices and high-frequency circuits.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Padamata, Sai Krishna, Yasinskiy, Andrey, Shabanov A. V., Bermeshev, Timofey, Yang, You-jian, Wang, Zhao-wen, Cao, Dao, Polyakov, Peter
Заглавие : Improving corrosion resistance of Cu-Al-based anodes in KF-AlF3-Al2O3 melts
Коллективы : State Assignment for the Science of Siberian Federal University, Russia [FSRZ-2020-0013]
Место публикации : Trans. Nonferrous Met. Soc. China. - 2022. - Vol. 32, Is. 1. - P.354-363. - ISSN 1003-6326, DOI 10.1016/S1003-6326(22)65800-X. - ISSN 2210-3384(eISSN)
Примечания : Cited References: 24. - The work is performed as a part of the State Assignment for the Science of Siberian Federal University, Russia (No. FSRZ-2020-0013) . Use of Krasnoyarsk Regional Center of Research Equipment of Federal Research Center "Krasnoyarsk Science Center SB RAS" is acknowledged
Предметные рубрики: NI-FE
ALUMINUM ELECTROLYSIS
INERT ANODES
NICKEL FERRITE
BEHAVIOR
Аннотация: The anodic behaviour of pre-oxidised and non-oxidised Cu−Al-based anodes (Cu−10Al and Cu−9.8Al−2Mn) in KF−AlF3−Al2O3 melts was studied through galvanostatic and potentiodynamic polarization techniques. The alloy compositions were oxidised for a short-term (8 h) at 700 °C, followed by galvanostatic polarization for 1 h at 800 °C with an applied current density of 0.4 A/cm2. The potentiodynamic curves were recorded with a sweep rate of 0.01 V/s. XRD analysis was conducted on frozen melt samples collected on the surface of the anode, and SEM observation was performed on the anode after the experiment to study the phases of the scales formed on the alloys. All the anode materials had a steady potential between 2.30 and 2.50 V(vs Al/AlF3). The corrosion rates of the anodes were calculated from the data acquired through potentiodynamic polarization. It was seen that pre-oxidised anodes possess a low corrosion rate compared to those without pre-oxidation treatment.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Драница М.В., Пахомов П. С., Киреев Н. Е., Орешонков, Александр Сергеевич
Заглавие : Численная оценка приведенного сопротивления теплопередаче оконных блоков различных конфигураций
Место публикации : Изв. вузов. Строительство. - 2022. - № 10. - С. 76-81. - ISSN 05361052 (ISSN), DOI 10.32683/0536-1052-2022-766-10-76-81; News High. Edu. Inst. Construct.
Примечания : Библиогр.: 8
Аннотация: В работе обсуждаются вопросы энергоэффективности пластиковых окон при заполнении межстекольного пространства осушенным воздухом, аргоном, криптоном, ксеноном и элегазом. Для численного расчета приведенного сопротивления теплопередаче оконных блоков с различными конфигурациями светопрозрачной части использованы современные программные комплексы Them 7.6 и Window 7.6. На основе полученных результатов разработаны рекомендации по использованию конфигураций стеклопакетов с заполнением воздухом и газами, отличными от него.This article discusses the energy efficiency of plastic windows with the filling the space between panes by dry air, argon, krypton, xenon and SF6 gas. Numerical calculation of reduced resistance to heat transfer of window blocks with different configurations of the transparent part were performed using Them 7.6 and Window 7.6 software. Finally, the results of this work can be used for developing recommendations of using the window block configurations filled with air and gases other than.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Pavlov A. V., Kveglis L. I., Saprykin D. N., Nasibullin R. T., Kalitova A. A., Velikanov D. A., Nemtsev I. V., Kantai N.
Заглавие : Emergence of ferromagnetism in nanoparticles of BeTiO3 ceramic with the perovskite structure
Место публикации : Inorg. Mater.: Appl. Res. - 2021. - Vol. 12, Is. 1. - P.88-93. - ISSN 20751133 (ISSN), DOI 10.1134/S2075113321010330
Примечания : Cited References: 21. - The part of the work involving calculations was supported by the Russian Science Foundation (grant no. 18-19-00268)
Аннотация: Emergence of ferromagnetism and an increase in the electrical conductance of BeTiO3 beryllium ceramic with the perovskite structure were discovered experimentally. To explain the reason for appearance of the metallic properties, models are proposed, and calculations of the electronic structure of nanoclusters with different short-range order are performed.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zhou J., Chen Y., Jiang C., Milicevic B., Molokeev M. S., Brik M. G., Bobrikov I. A., Yan J., Li J., Wu M.
Заглавие : High moisture resistance of an efficient Mn4+-activated red phosphor Cs2NbOF5:Mn4+ for WLEDs
Место публикации : Chem. Eng. J. - 2021. - Vol. 405. - Ст.126678. - ISSN 13858947 (ISSN), DOI 10.1016/j.cej.2020.126678
Примечания : Cited References: 43. - This work was financially supported by grants from the National Natural Science Foundation of China (No. 51802359, 21801254, 51902354) and its Joint Funds of Yunnan and Guangdong Province (No. U1702254 and No. U1801253), Special Fund of Guangdong Province Project for Applied Science and Technology Research and Development (No. 2017B090917001), Guangdong Basic and Applied Basic Research Foundation (No. 2020A1515010556), the Fundamental Research Funds for the Central Universities (No. 19lgpy123), and China Postdoctoral Science Foundation (No. 2019M663230). M. G. Brik thanks the supports from the National Recruitment Program of High-end Foreign Experts (No. GDT20185200479 and GDW20145200225), the Programme for the Foreign Experts (No. W2017011) and Wenfeng High-end Talents Project (No. W2016-01) offered by Chongqing University of Posts and Telecommunications (CQUPT) , Estonian Research Council grant PUT PRG111, and European Regional Development Fund (TK141)
Аннотация: Mn4+-activated fluoride red phosphors, the most important red phosphors for warm white light emitting diodes (LEDs), usually suffer from inherent poor moisture resistance which is a major obstacle to their long-lasting outdoor applications in a high humidity environment. Surface modification of phosphors by coating with either organic or inorganic shells is an effective way to improve waterproof stability. However, the coating procedure usually has a negative impact on the luminous efficacy due to the increased passivation shell thickness. In this work, Mn4+-activated oxyfluoroniobate (Cs2NbOF5), a highly efficient phosphor with internal quantum efficiency of ca. 82%, has been successfully synthesized and it is interesting to note that Cs2NbOF5:Mn4+ can exhibit remarkably improved waterproof stability even without surface coating compared to well-accepted commercial fluoride red-emitting phosphor, K2SiF6:Mn4+. The results obtained indicate that Nb5+ ions inside red phosphor play a crucial role in improving the water-resistant performance of Mn4+, which provides a new concept for overcoming the downside of their waterproof in humid conditions and maintaining the luminescence efficiency. In the final phase white LEDs with a high luminous efficacy of 174 lm/W (higher than commercial fluoride red phosphors), low correlated color temperature (3164 K) and high color rendering index (Ra = 90 and R9 = 85) have been fabricated using Cs2NbOF5:Mn4+.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Babkina I. V., Volochaev M. N., Zhilova O. V., Kalinin, Yu. E., Makagonov V. A., Pankov, S. Yu., Sitnikov A. V.
Заглавие : Electrical properties of thin In2O3/C films
Коллективы : Russian Federation Ministry of Science and Higher Education [3.1867, 2017/4.6]
Место публикации : Inorg. Mater. - 2020. - Vol. 56, Is. 4. - P.374-381. - ISSN 0020-1685, DOI 10.1134/S0020168520040019. - ISSN 1608-3172(eISSN)
Примечания : Cited References: 26. - This work was supported by the Russian Federation Ministry of Science and Higher Education (state research target, project no. 3.1867, 2017/4.6).
Предметные рубрики: SEMICONDUCTORS
GAS
Аннотация: We have studied the structure and electrical properties of thin films based on the In2O3 semiconductor and carbon, grown by atomic layer deposition using ion-beam sputtering. The structure of the resultant materials, formed during layer-by-layer growth of island layers, is made up of nanocrystalline In2O3 granules distributed at random over amorphous carbon. The electrical transport properties of the In2O3/C thin films depend on their thickness. In the temperature range 80-300 K, the dominant electrical transport mechanism in the In2O3/C thin films of thickness h 70 nm sequentially changes from variable range hopping between localized states in a narrow energy band near the Fermi level (between 80 and 120 K) to nearest neighbor hopping (between 120 and 250 K) and then to variable range hopping between localized states in the conduction band tail (between 250 and 300 K). The films of thickness h 70 nm undergo a change from conduction associated with strong carrier localization to that due to the presence of percolation clusters formed by In2O3 nanocrystals, which shows up as a linear temperature dependence of conductivity, with a negative temperature coefficient.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Drokin N. A., Kiiko V. S., Pavlov A. V., Malkin A. I.
Заглавие : BT-30 Ceramic Electrophysical Properties
Место публикации : Refract. Ind. Ceram. - 2020. - Vol. 61, Is. 3. - P.341-348. - ISSN 1083-4877 (ISSN), DOI 10.1007/s11148-020-00484-2. - ISSN 1573-9139 (eISSN)
Примечания : Cited References: 12
Аннотация: A total complex resistance (impedance) method is used to study the electrophysical characteristics of (BeO + TiO2)-ceramics modified with TiO2 micro- and nanoparticles in an amount of 30 wt.% (BT-30). Dispersion of the actual ε′ and imaginary ε′′ components of the dielectric permittivity component and specific conductivity in the frequency range from 100 Hz to 100 MHz from room temperature to the boiling point of liquid nitrogen are determined. High values of ε′ and ε′′ in the low-frequency range are typical for structurally inhomogeneous materials due to the accumulation of electric charges at the surface and within microcrystals. Two dielectric relaxation processes associated with electrical conductivity within the body and at the surface of ceramics are detected for the first time. An increase in conductivity with an increase in the microwave field frequency above 1 MHz is explained by the appearance of a current relaxation component. The activation energy of the static resistance of ceramic specimens is determined as a function of the reciprocal temperature that depends little on the weight content of TiO2 nanoparticles and varies in the range of 0.024 – 0.10 eV This also confirms the existence of two independent conduction processes, weakly dependent on the nanoparticle content in the ceramic composition. With placement of ceramic in a high-frequency electric field, spatial charges are formed, the field of which contributes to creation of additional polarization and dielectric losses.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Sitnikov M. N., Kharkov A. M., Aplesnin S. S., Romanova O. B.
Заглавие : Influence of the Magnetic Field on Transprt Properties of Holmium-Manganese Sulfide
Место публикации : Sib. J. Sci. Technol. - 2020. - Vol. 21, Is. 3. - P.451-458. - ISSN 2587-6066, DOI 10.31772/2587-6066-2020-21-3-451-458; \b Сибирский журнал науки и технологий
Примечания : Cited References: 33. - The work was supported by the Siberian State University youth grant, SibGU, 2020
Аннотация: Holmium-manganese silfide with giant magnetoresistance refers to new magnetic sulfide compounds of holmium and manganese that have the effect of giant magnetoresistance (i. e., with special magnetoelectric properties), which can be used as components of sensor technology, magnetic memory, and spintronics. The technology of manufacturing polycrustals HoxMn1-xS grown by crystallization from the melt of the obtained powdered sulfides with a putity not lower then 99,9%, in glass-carbon crucibles and a quartz reactor in an argon atmosphere is presented. According to the results of x-ray diffracton analysis, HoxMn1-xS holmium-manganese sulfides have a HCC structure of the NaCl type. As the degree of cationic substitution increases, the unit cell parameter increases linearly with the concentration. No concomitant impurity phases are detected in the synthesized samples. Tj determine the state of the spin glass, mahnetic moment measurements are conducted at several frequencies ω = 1 KHz, 10 KHz and 100 kHz. The dependence of magnetic characteristics on the frequency of measurements is found. The damping of the magnetic moment and its increase with a decrease in temperature is reviled, which is connected with the formation of metastable states. Measurements of electrical resistance without a field and in a magnetic field are conducted. Anomalies in the remperature dependence of the conductivity are found. A change in the magnetoresistance sign is detected with the increase of temperature below and above room temperature.Гольмий-марганцевый сульфид с гигантским магнитосопротивлением относится к новым магнитным сульфидным соеднениям гольмия и марганца, обладающим эффектом гигантского магнитоспопротивления, то есть с особыми магнитоэлектрическими свойствами, которые могут быть использованы в качестве составляющих компонент сенсорной техники, магнитной памяти для спинтроники. Приведена технология изготовления поликристаллов HoxMn1-xS, выращенных кристаллизацией из расплава полученных порошковых сульфидов чистотой не ниже 99,9% в стеклоуглеродных тиглях и кварцевом реакторе в атмосфере аргона. Согласно результатам рентгеноструктурного анализа, гольмий-марганцевые сульфиды HoxMn1-xS имеют ГЦК структуру типа NACl. С увеличением степени катионного замещения параметр элементарной ячейки линейно увеличивается с концентрацией. Сопутствующих примесных фаз в синтезированных образцах не обнаружено. Для установления состояния спинового стекла проуедены измерения магнитного момента на нескольких частотах ω = 1, 10 и 100 KHz. Обнаружена зависимость характеристик от частоты измерений. Найдено затухание магнитного момента и его увеличение с понижением температуры, что связывается с образованием метастабильных состояний. Проведены измерения электросопротивления без поля и в магнитном поле. Найдены аномалии в температурной зависимости проводимости. Обнаружена смена знака магнитосопротивления с ростом температуры ниже и выше комнатной температуры.
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