Библиотека института физики им. Л.В. Киренского СО РАН

Главная

Базы данных

Труды сотрудников ИФ СО РАН - результаты поиска

Вид поиска

Каталог книг и брошюр библиотеки ИФ СО РАН

Каталог журналов библиотеки ИФ СО РАН

Труды сотрудников ИФ СО РАН

Область поиска

в найденном

Найдено в других БД:

Каталог книг и брошюр библиотеки ИФ СО РАН (22)

Каталог журналов библиотеки ИФ СО РАН (2)

Формат представления найденных документов:
полный	информационный	краткий

Отсортировать найденные документы по:
автору	заглавию	году издания	типу документа

Поисковый запрос: (<.>K=semiconductor<.>)

Общее количество найденных документов : 126
Показаны документы с 1 по 10

1-10 11-20 21-30 31-40 41-50 51-60

Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect / D. A. Smolyakov, A. S. Tarasov, M. A. Bondarev [et al.] // Mater. Sci. Semicond. Process. - 2021. - Vol. 126. - Ст. 105663, DOI 10.1016/j.mssp.2021.105663. - Cited References: 21. - This study was supported by the Government of the Russian Federation , Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886) . - ISSN 1369-8001
Кл.слова (ненормированные):
Semiconductors -- Magnetoimpedance -- Impurities -- Implantation
Аннотация: A silicon structure doped with Ga using ion implantation has been investigated by admittance spectroscopy. It has been established that the presence of the Ga impurity, along with the B one, in the silicon structure leads to the appearance of the second peak in the temperature dependence of the real part of the impedance (admittance). Moreover, switching-on a magnetic field parallel to the sample plane shifts the singularities in the temperature curve to the high-temperature region. This results in the manifestation of both the positive and negative magnetoresistance effect upon temperature and magnetic field variation. It has been found by the standard admittance spectroscopy analysis of the impedance data that the energy structure of the investigated sample includes two interfacial energy levels ES1(0) = 42 meV and ES2(0) = 69.4 meV. As expected, these energies are consistent with the energies of B and Ga dopants. In a magnetic field, these levels increase by 3 meV for B and 2 meV for Ga, which induces the magnetoresistance effect. It has been demonstrated that the interfacial state-induced magnetoresistance effect can be tuned by ion implantation and dopant selection.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences660036, Russian Federation
Lobachevsky State University, Nizhny Novgorod603950, Russian Federation

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Bondarev, M. A.; Бондарев, Михаил Александрович; Nikolskaya, A. A.; Vasiliev, V. K.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Volkov, N. V.; Волков, Никита Валентинович
}
Найти похожие

Alekseev, K. N.
Pendulum limit, chaos and phase-locking in the dynamics of ac-driven semiconductor superlattices / K. N. Alekseev, F. V. Kusmartsev // Phys. Lett. A. - 2002. - Vol. 305, Is. 5. - P. 281-288, DOI 10.1016/S0375-9601(02)01420-2. - Cited References: 60 . - ISSN 0375-9601

РУБ Physics, Multidisciplinary
Рубрики:
STRANGE NONCHAOTIC ATTRACTORS
   DC VOLTAGE GENERATION
   JOSEPHSON-JUNCTIONS
   GAAS/ALAS SUPERLATTICE
   BLOCH OSCILLATIONS
   TERAHERTZ RADIATION
   ELECTRIC-FIELD
   THZ RADIATION
   FREQUENCY
   TRANSPORT
Кл.слова (ненормированные):
semiconductor superlattice -- pendulum -- chaos -- phase-locking -- Josephson junction -- Chaos -- Josephson junction -- Pendulum -- Phase-locking -- Semiconductor superlattice -- analytic method -- analytical parameters -- article -- dynamics -- electric potential -- semiconductor -- temperature
Аннотация: We describe a limiting case when nonlinear dynamics of an ac-driven semiconductor superlattice in the miniband transport regime is governed by a periodically forced and damped pendulum equations. We find analytically the conditions for a transition to chaos. With increasing temperature the chaos disappears. We also discuss fractional do voltage states in a superlattice originating from phase-locked states of the pendulum. (C) 2002 Elsevier Science B.V. All rights reserved.

WOS,
Scopus,
Читать в сети ИФ
Держатели документа:
Oulu Univ, Dept Phys Sci, FIN-90014 Oulu, Finland
LV Kirenskii Inst Phys, Theory Nonlinear Proc Lab, Krasnoyarsk 660036, Russia
Loughborough Univ Technol, Dept Phys, Loughborough LE11 3TU, Leics, England
ИФ СО РАН
Department of Physical Sciences, University of Oulu, P.O. Box 3000, FIN-90014, Oulu, Finland
Theory of Nonlin. Proc. Laboratory, Kirensky Institute of Physics, Krasnoyarsk 660036, Russian Federation
Department of Physics, Loughborough University, Loughborough LE11 3TU, United Kingdom

Доп.точки доступа:
Kusmartsev, F. V.
}
Найти похожие

    Aliovalent substitution toward reinforced structural rigidity in Ce3+-doped garnet phosphors featuring improved performance / T. Hu [et al.] // J. Mater. Chem. C. - 2019. - Vol. 7, Is. 46. - P. 14594-14600, DOI 10.1039/c9tc05354a. - Cited References: 38. - This work was supported by the National Natural Science Foundation of China (No. 51722202 and 51972118), the Guangdong Provincial Science & Technology Project (2018A050506004) and the Fundamental Research Funds for the Central Universities (D2190980). . - ISSN 2050-7534
   Перевод заглавия: Алиовалентное замещение с целью усиления структурной жесткости в люминофорных гранатах, легированных Ce3 + и имеющих улучшенные характеристики
Кл.слова (ненормированные):
Color -- Deterioration -- Efficiency -- Gallium alloys -- Garnets -- III-V semiconductors -- Indium alloys -- Photoluminescence -- Reinforcement -- Rigidity -- Semiconductor alloys -- Thermal Engineering -- Thermodynamic stability
Аннотация: Highly efficient phosphors with thermal stability and color-tunable emission are required for the fabrication of phosphor-converted white light-emitting diodes (pc-WLEDs). Currently developed engineering strategies are generally successful in photoluminescence tuning but, unfortunately, suffer severe deterioration in emission intensity/efficiency and/or thermal stability. Herein, an efficient aliovalent substitution strategy toward reinforced structural rigidity is proposed and demonstrated experimentally. By incorporating Be2+ ion into the garnet-type Lu2SrAl4SiO12:Ce3+ phosphor, the phosphor shows enhanced internal/external quantum efficiency, from 79.2%/26.7% to 84.5%/32.9%, photoluminescence tuning from green (peaking at ∼512 nm) to yellow (peaking at ∼552 nm), and zero thermal quenching, even up to 200 °C. The Be2+ substitution at the Al2/Si2 site enables stable and rigid local surroundings around the Ce3+ activator, which is responsible for the unprecedented performance. In addition, high-quality warm WLED devices with a luminous efficiency of 158.1 lm W-1, correlated color temperature of 3858 K and high color rendering index of 81.7, are obtained by combining Lu2SrAl4SiO12:Ce3+,Be2+ as the yellow emitter, CaAlSiN3:Eu2+ as the red emitter and a blue-emitting InGaN chip. These findings highlight a new strategy for performance optimization of LED phosphors by selecting rigid covalent compounds with further reinforced structural rigidity via aliovalent substitution.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Держатели документа:
State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou, 510641, China
Laboratory of Crystal Physics, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Department of Physics, Far Eastern State Transport University, Khabarovsk, 680021, Russian Federation

Доп.точки доступа:
Hu, T.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Xia, Z.; Zhang, Q.
}
Найти похожие

    Analytic gradient for the adaptive frozen orbital bond detachment in the fragment molecular orbital method / D. G. Fedorov [et al.] // Chem. Phys. Lett. - 2009. - Vol. 477, Is. 1-3. - P. 169-175, DOI 10.1016/j.cplett.2009.06.072. - Cited Reference Count: 49. - Гранты: We thank Professor M. Suenaga of Kyushu University for continuing his development of the modeling software FACIO and its FMO interface. D. G. F. and K. K. were supported by the a Grant-in- Aid for Scientific Research (JSPS, Japan) and the Next Generation SuperComputing Project, Nanoscience Program (MEXT, Japan). J.H.J. was supported by a Skou Fellowship from the Danish Research Agency (Forskningsradet for Natur og Univers). - Финансирующая организация: JSPS, Japan; Next Generation SuperComputing Project; MEXT, Japan; Danish Research Agency . - JUL 28. - ISSN 0009-2614
Рубрики:
DENSITY-FUNCTIONAL THEORY
   GEOMETRY OPTIMIZATIONS
   SEMICONDUCTOR NANOWIRES
   SILICON NANOWIRES
   METHOD FMO
   ENERGY
   SURFACES
   RECONSTRUCTION
   CHEMISTRY
   PROTEINS
Кл.слова (ненормированные):
Energy gradients -- Fragment molecular orbital methods -- Future applications -- Geometry optimization -- Numerical criteria -- Silicon Nanowires -- Molecular modeling -- Molecular orbitals
Аннотация: We have developed and implemented the analytic energy gradient for the bond detachment scheme in the fragment molecular orbital method (FMO) suitable to describe solids, and applied it to the geometry optimization of a silicon nanowire at several levels of theory. In addition, we have examined in detail the effects of the particular choice of the fragmentation upon the accuracy and introduced a number of numerical criteria to characterize the errors. The established route is expected to provide guidance for future applications of FMO to surfaces, solids and nanosystems. (C) 2009 Elsevier B. V. All rights reserved.

WOS,
Scopus,
eLibrary
Держатели документа:
Natl Inst Adv Ind Sci & Technol, RICS, Tsukuba, Ibaraki 3058568, Japan
SB RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia
Univ Copenhagen, Dept Chem, DK-2100 Copenhagen, Denmark
Kyoto Univ, Grad Sch Pharmaceut Sci, Sakyo Ku, Kyoto 6068501, Japan

Доп.точки доступа:
Fedorov, D.G.; Kitaura, K.; Avramov, P. V.; Аврамов, Павел Вениаминович; Jensen, J.H.
}
Найти похожие

Arkhipkin, V. G.
Pulse pair propagation under conditions of induced transparency: adiabatic approximation / V. G. Arkhipkin, I. V. Timofeev ; ed.: SA Gurevich, SA Gurevic ; Laser Optics 2000 Conference (2000 ; Jun ; 26-30 ; St. Petersburg) // Laser optics 2000: semiconductor lasers and optical communication. Ser. proceedings of the society of photo-optical instrumentation engineers (SPIE) : SPIE-Int. Soc. Optical Engineering, 2001. - Vol. 4354. - P. 111-117, DOI 10.1117/12.418816. - Cited References: 18 . - ISBN 0277-786X. - ISBN 0-8194-4044-2

РУБ Optics
Рубрики:
ELECTROMAGNETICALLY INDUCED TRANSPARENCY
   COHERENT POPULATION TRANSFER
   LASER-PULSES
   MULTILEVEL SYSTEMS
   QUANTUM
Кл.слова (ненормированные):
adiabatic population transfer -- coherent population trapping -- electromagnetically induced transparency -- counterintuitive pulse sequence
Аннотация: The features of spatial and temporal evolution of two short laser pulses propagating in three-level medium under conditions of coherent population trapping and adiabatic population transfer is investigated in adiabatic approximation. It is shown that in both cases pulses can penetrate into a medium at a distance considerably exceeding the length of linear absorption of a single weak probe pulse in absence of a coupling pulse at adjacent transition. The difference of spatial and temporal evolution of level populations in processes of coherent population trapping and adiabatic population transfer is demonstrated. Also we show that the concept of dressed-field pulses is consequence of Manley-Raw relation.

WOS,
Читать в сети ИФ

Доп.точки доступа:
Timofeev, I. V.; Тимофеев, Иван Владимирович; Gurevich, S. A. \ed.\; Архипкин, Василий Григорьевич; Laser Optics, International Conference (2000 ; June ; 26-30 ; St. Petersburg)
}
Найти похожие

    Atypical quantum confinement effect in silicon nanowires / P. B. Sorokin [et al.] // J. Phys. Chem. A. - 2008. - Vol. 112, Is. 40. - P9955-9964, DOI 10.1021/jp805069b. - Cited Reference Count: 25. - Гранты: This work was in part partially supported by a CREST (Core Research for Evolutional Science and Technology) grant in the Area of High Performance Computing for Multiscale and Multiphysics Phenomena from the Japan Science and Technology Agency (JST) as well as by Russian Fund of Basic Researches (grant 08-02-01096) (L.A.C.). P.V.A. acknowledges the encouragement of Dr. Keiji Morokuma, Research Leader at Fukui Institute for Fundamental Chemistry. The geometry of all presented structures was visualized by ChemCraft software.SUP25/SUP L.A.C. acknowledges I. V. Stankevich for help and fruitful discussions. P.B.S. is grateful to the Joint Supercomputer Center of the Russian Academy of Sciences for access to a cluster computer for quantum-chemical calculations. - Финансирующая организация: Japan Science and Technology Agency (JST); Russian Fund of Basic Researches [08-02-01096] . - OCT 9. - ISSN 1089-5639
Рубрики:
ELECTRONIC-STRUCTURE
   OPTICAL-PROPERTIES
   SI
   DENSITY
   WIRES
   EXCHANGE
   ATOMS
   DOTS
Кл.слова (ненормированные):
Electric wire -- Energy gap -- Gallium alloys -- Mathematical models -- Nanostructured materials -- Nanostructures -- Nanowires -- Quantum confinement -- Quantum electronics -- Semiconductor quantum dots -- Silicon -- Ami methods -- Band gaps -- Blue shifts -- Dinger equations -- Linear junctions -- Monotonic decreases -- Quantum confinement effects -- Quantum dots -- Semiempirical -- Silicon nanowires -- System sizes -- Theoretical models -- Nanocrystalline silicon -- nanowire -- quantum dot -- silicon -- article -- chemistry -- electron -- quantum theory -- Electrons -- Nanowires -- Quantum Dots -- Quantum Theory -- Silicon
Аннотация: The quantum confinement effect (QCE) of linear junctions of silicon icosahedral quantum dots (IQD) and pentagonal nanowires (PNW) was studied using DFT and semiempirical AM1 methods. The formation of complex IQD/PNW structures leads to the localization of the HOMO and LUMO on different parts of the system and to a pronounced blue shift of the band gap; the typical QCE with a monotonic decrease of the band gap upon the system size breaks down. A simple one-electron one-dimensional Schrodinger equation model is proposed for the description and explanation of the unconventional quantum confinement behavior of silicon IQD/PNW systems. On the basis of the theoretical models, the experimentally discovered deviations from the typical QCE for nanocrystalline silicon are explained.

WOS,
Scopus,
eLibrary
Держатели документа:
Siberian Fed Univ, Krasnoyarsk 660041, Russia
LV Kirenskii Inst Phys, SB RAS, Krasnoyarsk 660036, Russia
RAS, N M Emanuel Inst Biochem Phys, Moscow 119334, Russia
Kyoto Univ, Fukui Inst Fundamental Chem, Kyoto 6068103, Japan
Natl Inst Adv Ind Sci & Technol, Res Inst Computat Sci, Tsukuba, Ibaraki 3058568, Japan

Доп.точки доступа:
Sorokin, P. B.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Avramov, P. V.; Chernozatonskii, L.A.; Fedorov, D.G.
}
Найти похожие

Avramov, P. V.
Effect of carbon network defects on the electronic structure of semiconductor single-wall carbon nanotubes / P. V. Avramov, B. I. Yakobson, G. E. Scuseria // Phys. Solid State. - 2004. - Vol. 46, Is. 6. - P. 1168-1172, DOI 10.1134/1.1767262. - Cited References: 15 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
JUNCTIONS
Аннотация: For a single-wall (14, 0) carbon nanotube, the total density of electronic states of the ideal structure and of some possible defect structures is calculated in the framework of the band theory approach using Gaussian-type orbitals and the approximation of the generalized density gradient. It is shown that allowance for defects of the atomic structure of a nanotube makes it possible to adequately describe the existing experimental data on nanotube electronic structure. In the framework of the same approach, the total density of electronic states is calculated for an intermolecular contact of (5, 5) and (10, 0) single-wall carbon nanotubes formed due to the creation of a 5-7 defect. It is shown that the electronic states related to the contact region and the 5-7 defect lie in vicinity of the Fermi level. (C) 2004 MAIK "Nauka/Interperiodica".

WOS,
Scopus,
Читать в сети ИФ
Держатели документа:
Russian Acad Sci, Siberian Div, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Rice Univ, Ctr Biol & Environm Nanotechnol, Houston, TX 77005 USA
ИФ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk, 660036, Russian Federation
Ctr. for Biol./Environ. Nanotechnol., Rice University, Houston, TX 77005-1892, United States

Доп.точки доступа:
Yakobson, B. I.; Scuseria, G. E.; Аврамов, Павел Вениаминович
}
Найти похожие

Balaev, A. D.
Quantum oscillations of resistance and magnetization in the degenerate semiconductor n-HgCr2Se4 / A. D. Balaev, V. A. Gavrichkov, S. G. Ovchinnikov // J. Exp. Theor. Phys. - 1998. - Vol. 86, Is. 5. - P. 1026-1029, DOI 10.1134/1.558549. - Cited References: 6 . - ISSN 1063-7761

РУБ Physics, Multidisciplinary

Аннотация: In the magnetic field range Delta H = 8-60 kOe we observed and studied the anomalous oscillations in the magnetic field dependence of the resistance and magnetization of single crystals of n-HgCr2Se4. The absence of periodicity in 1/H in the Delta H = 8-20 kOe range can be explained by the non-Fermi-liquid behavior of the electron subsystem and agrees with the theory of the de Haas-van Alphen in systems with intermediate valence. In stronger fields, Delta H = 20-60 kOe, the amplitude of the fundamental harmonic decreases, with the number and amplitude of the higher-order harmonics increasing, As a result, noise is superimposed on the signal as magnetic field strength grows. The temperature dependence of the magnetization is the sum of the monotonic spin-wave contribution and the oscillating part. (C) 1998 American Institute of Physics. [S1063-7761(98)02205-7].

WOS,
Scopus,
Читать в сети ИФ

Публикация на русском языке Квантовые осцилляции сопротивления и намагниченности в вырожденном полупроводнике n-HgCr_2Se_4 [Текст] / А. Д. Балаев [и др.] // Журн. эксперим. и теор. физ. - 1998. - Т. 113 Вып. 5. - С. 1877-1882

Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
Krasnoyarsk State Univ, Krasnoyarsk 660074, Russia
Russian Acad Sci, NS Kurnakov Gen & Inorgan Chem Inst, Moscow 117907, Russia
ИФ СО РАН

Доп.точки доступа:
Gavrichkov, V. A.; Гавричков, Владимир Александрович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Балаев, Александр Дмитриевич
}
Найти похожие

BELYAEV, B. A.
CONSTANT TENSION IN MAGNETIC FILM-SEMICONDUCTOR STRUCTURE DURING FERROMAGNETIC-RESONANCE / B. A. BELYAEV, G. I. FROLOV // Zhurnal Tek. Fiz. - 1980. - Vol. 50, Is. 6. - P. 1354-1355. - Cited References: 4 . - ISSN 0044-4642

РУБ Physics, Applied

WOS
Доп.точки доступа:
FROLOV, G. I.
}
Найти похожие

10.

BELYAEV, B. A.
GALVANO-SPIN-WAVE RESONANCE IN A SEMICONDUCTOR FERROMAGNETIC LAMINAR STRUCTURE / B. A. BELYAEV, V. V. TYURNEV, G. I. FROLOV // Zhurnal Tek. Fiz. - 1982. - Vol. 52, Is. 1. - P. 126-128. - Cited References: 2 . - ISSN 0044-4642

РУБ Physics, Applied

WOS
Доп.точки доступа:
TYURNEV, V. V.; FROLOV, G. I.
}
Найти похожие