Библиотека института физики им. Л.В. Киренского СО РАН

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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Tarasov A. S., Bondarev M. A., Nikolskaya A. A., Vasiliev V. K., Volochaev M. N., Volkov N. V.
Заглавие : Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect
Место публикации : Mater. Sci. Semicond. Process. - 2021. - Vol. 126. - Ст.105663. - ISSN 13698001 (ISSN), DOI 10.1016/j.mssp.2021.105663
Примечания : Cited References: 21. - This study was supported by the Government of the Russian Federation , Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886)
Аннотация: A silicon structure doped with Ga using ion implantation has been investigated by admittance spectroscopy. It has been established that the presence of the Ga impurity, along with the B one, in the silicon structure leads to the appearance of the second peak in the temperature dependence of the real part of the impedance (admittance). Moreover, switching-on a magnetic field parallel to the sample plane shifts the singularities in the temperature curve to the high-temperature region. This results in the manifestation of both the positive and negative magnetoresistance effect upon temperature and magnetic field variation. It has been found by the standard admittance spectroscopy analysis of the impedance data that the energy structure of the investigated sample includes two interfacial energy levels ES1(0) = 42 meV and ES2(0) = 69.4 meV. As expected, these energies are consistent with the energies of B and Ga dopants. In a magnetic field, these levels increase by 3 meV for B and 2 meV for Ga, which induces the magnetoresistance effect. It has been demonstrated that the interfacial state-induced magnetoresistance effect can be tuned by ion implantation and dopant selection.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Alekseev K. N., Kusmartsev F. V.
Заглавие : Pendulum limit, chaos and phase-locking in the dynamics of ac-driven semiconductor superlattices
Место публикации : Phys. Lett. A: ELSEVIER SCIENCE BV, 2002. - Vol. 305, Is. 5. - P281-288. - ISSN 0375-9601, DOI 10.1016/S0375-9601(02)01420-2
Примечания : Cited References: 60
Предметные рубрики: STRANGE NONCHAOTIC ATTRACTORS
DC VOLTAGE GENERATION
JOSEPHSON-JUNCTIONS
GAAS/ALAS SUPERLATTICE
BLOCH OSCILLATIONS
TERAHERTZ RADIATION
ELECTRIC-FIELD
THZ RADIATION
FREQUENCY
TRANSPORT
Ключевые слова (''Своб.индексиров.''): semiconductor superlattice--pendulum--chaos--phase-locking--josephson junction--chaos--josephson junction--pendulum--phase-locking--semiconductor superlattice--analytic method--analytical parameters--article--dynamics--electric potential--semiconductor--temperature
Аннотация: We describe a limiting case when nonlinear dynamics of an ac-driven semiconductor superlattice in the miniband transport regime is governed by a periodically forced and damped pendulum equations. We find analytically the conditions for a transition to chaos. With increasing temperature the chaos disappears. We also discuss fractional do voltage states in a superlattice originating from phase-locked states of the pendulum. (C) 2002 Elsevier Science B.V. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Hu T., Molokeev M. S., Xia Z., Zhang Q.
Заглавие : Aliovalent substitution toward reinforced structural rigidity in Ce3+-doped garnet phosphors featuring improved performance
Место публикации : J. Mater. Chem. C. - 2019. - Vol. 7, Is. 46. - P.14594-14600. - ISSN 20507534 (ISSN), DOI 10.1039/c9tc05354a
Примечания : Cited References: 38. - This work was supported by the National Natural Science Foundation of China (No. 51722202 and 51972118), the Guangdong Provincial Science & Technology Project (2018A050506004) and the Fundamental Research Funds for the Central Universities (D2190980).
Аннотация: Highly efficient phosphors with thermal stability and color-tunable emission are required for the fabrication of phosphor-converted white light-emitting diodes (pc-WLEDs). Currently developed engineering strategies are generally successful in photoluminescence tuning but, unfortunately, suffer severe deterioration in emission intensity/efficiency and/or thermal stability. Herein, an efficient aliovalent substitution strategy toward reinforced structural rigidity is proposed and demonstrated experimentally. By incorporating Be2+ ion into the garnet-type Lu2SrAl4SiO12:Ce3+ phosphor, the phosphor shows enhanced internal/external quantum efficiency, from 79.2%/26.7% to 84.5%/32.9%, photoluminescence tuning from green (peaking at ∼512 nm) to yellow (peaking at ∼552 nm), and zero thermal quenching, even up to 200 °C. The Be2+ substitution at the Al2/Si2 site enables stable and rigid local surroundings around the Ce3+ activator, which is responsible for the unprecedented performance. In addition, high-quality warm WLED devices with a luminous efficiency of 158.1 lm W-1, correlated color temperature of 3858 K and high color rendering index of 81.7, are obtained by combining Lu2SrAl4SiO12:Ce3+,Be2+ as the yellow emitter, CaAlSiN3:Eu2+ as the red emitter and a blue-emitting InGaN chip. These findings highlight a new strategy for performance optimization of LED phosphors by selecting rigid covalent compounds with further reinforced structural rigidity via aliovalent substitution.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fedorov D.G., Kitaura K., Avramov P. V., Jensen J.H.
Заглавие : Analytic gradient for the adaptive frozen orbital bond detachment in the fragment molecular orbital method
Место публикации : Chem. Phys. Lett. - 2009. - Vol. 477, Is. 1-3. - P.169-175. - JUL 28. - ISSN 0009-2614, DOI 10.1016/j.cplett.2009.06.072
Примечания : Cited Reference Count: 49. - Гранты: We thank Professor M. Suenaga of Kyushu University for continuing his development of the modeling software FACIO and its FMO interface. D. G. F. and K. K. were supported by the a Grant-in- Aid for Scientific Research (JSPS, Japan) and the Next Generation SuperComputing Project, Nanoscience Program (MEXT, Japan). J.H.J. was supported by a Skou Fellowship from the Danish Research Agency (Forskningsradet for Natur og Univers).Финансирующая организация: JSPS, Japan; Next Generation SuperComputing Project; MEXT, Japan; Danish Research Agency
Предметные рубрики: DENSITY-FUNCTIONAL THEORY
GEOMETRY OPTIMIZATIONS
SEMICONDUCTOR NANOWIRES
SILICON NANOWIRES
METHOD FMO
ENERGY
SURFACES
RECONSTRUCTION
CHEMISTRY
PROTEINS
Ключевые слова (''Своб.индексиров.''): energy gradients--fragment molecular orbital methods--future applications--geometry optimization--numerical criteria--silicon nanowires--molecular modeling--molecular orbitals
Аннотация: We have developed and implemented the analytic energy gradient for the bond detachment scheme in the fragment molecular orbital method (FMO) suitable to describe solids, and applied it to the geometry optimization of a silicon nanowire at several levels of theory. In addition, we have examined in detail the effects of the particular choice of the fragmentation upon the accuracy and introduced a number of numerical criteria to characterize the errors. The established route is expected to provide guidance for future applications of FMO to surfaces, solids and nanosystems. (C) 2009 Elsevier B. V. All rights reserved.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Arkhipkin V. G., Timofeev I. V.
Заглавие : Pulse pair propagation under conditions of induced transparency: adiabatic approximation
Коллективы : Laser Optics, International Conference (2000 ; June ; 26-30; St. Petersburg)
Место публикации : Laser optics 2000: semiconductor lasers and optical communication. Ser. proceedings of the society of photo-optical instrumentation engineers (SPIE): SPIE-Int. Soc. Optical Engineering, 2001. - Vol. 4354. - P.111-117. - ISBN 0277-786X, DOI 10.1117/12.418816. - ISBN 0-8194-4044-2
Примечания : Cited References: 18
Предметные рубрики: ELECTROMAGNETICALLY INDUCED TRANSPARENCY
COHERENT POPULATION TRANSFER
LASER-PULSES
MULTILEVEL SYSTEMS
QUANTUM
Ключевые слова (''Своб.индексиров.''): adiabatic population transfer--coherent population trapping--electromagnetically induced transparency--counterintuitive pulse sequence
Аннотация: The features of spatial and temporal evolution of two short laser pulses propagating in three-level medium under conditions of coherent population trapping and adiabatic population transfer is investigated in adiabatic approximation. It is shown that in both cases pulses can penetrate into a medium at a distance considerably exceeding the length of linear absorption of a single weak probe pulse in absence of a coupling pulse at adjacent transition. The difference of spatial and temporal evolution of level populations in processes of coherent population trapping and adiabatic population transfer is demonstrated. Also we show that the concept of dressed-field pulses is consequence of Manley-Raw relation.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Sorokin P. B., Ovchinnikov S. G., Avramov P. V., Chernozatonskii L.A., Fedorov D.G.
Заглавие : Atypical quantum confinement effect in silicon nanowires
Место публикации : J. Phys. Chem. A. - WASHINGTON: AMER CHEMICAL SOC, 2008. - Vol. 112, Is. 40. - С. 9955-9964. - OCT 9. - ISSN 1089-5639, DOI 10.1021/jp805069b
Примечания : Cited Reference Count: 25. - Гранты: This work was in part partially supported by a CREST (Core Research for Evolutional Science and Technology) grant in the Area of High Performance Computing for Multiscale and Multiphysics Phenomena from the Japan Science and Technology Agency (JST) as well as by Russian Fund of Basic Researches (grant 08-02-01096) (L.A.C.). P.V.A. acknowledges the encouragement of Dr. Keiji Morokuma, Research Leader at Fukui Institute for Fundamental Chemistry. The geometry of all presented structures was visualized by ChemCraft software.SUP25/SUP L.A.C. acknowledges I. V. Stankevich for help and fruitful discussions. P.B.S. is grateful to the Joint Supercomputer Center of the Russian Academy of Sciences for access to a cluster computer for quantum-chemical calculations.Финансирующая организация: Japan Science and Technology Agency (JST); Russian Fund of Basic Researches [08-02-01096]
Предметные рубрики: ELECTRONIC-STRUCTURE
OPTICAL-PROPERTIES
SI
DENSITY
WIRES
EXCHANGE
ATOMS
DOTS
Ключевые слова (''Своб.индексиров.''): electric wire--energy gap--gallium alloys--mathematical models--nanostructured materials--nanostructures--nanowires--quantum confinement--quantum electronics--semiconductor quantum dots--silicon--ami methods--band gaps--blue shifts--dinger equations--linear junctions--monotonic decreases--quantum confinement effects--quantum dots--semiempirical--silicon nanowires--system sizes--theoretical models--nanocrystalline silicon--nanowire--quantum dot--silicon--article--chemistry--electron--quantum theory--electrons--nanowires--quantum dots--quantum theory--silicon
Аннотация: The quantum confinement effect (QCE) of linear junctions of silicon icosahedral quantum dots (IQD) and pentagonal nanowires (PNW) was studied using DFT and semiempirical AM1 methods. The formation of complex IQD/PNW structures leads to the localization of the HOMO and LUMO on different parts of the system and to a pronounced blue shift of the band gap; the typical QCE with a monotonic decrease of the band gap upon the system size breaks down. A simple one-electron one-dimensional Schrodinger equation model is proposed for the description and explanation of the unconventional quantum confinement behavior of silicon IQD/PNW systems. On the basis of the theoretical models, the experimentally discovered deviations from the typical QCE for nanocrystalline silicon are explained.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Avramov P. V., Yakobson B. I., Scuseria G. E.
Заглавие : Effect of carbon network defects on the electronic structure of semiconductor single-wall carbon nanotubes
Место публикации : Phys. Solid State: AMER INST PHYSICS, 2004. - Vol. 46, Is. 6. - P1168-1172. - ISSN 1063-7834, DOI 10.1134/1.1767262
Примечания : Cited References: 15
Предметные рубрики: JUNCTIONS
Аннотация: For a single-wall (14, 0) carbon nanotube, the total density of electronic states of the ideal structure and of some possible defect structures is calculated in the framework of the band theory approach using Gaussian-type orbitals and the approximation of the generalized density gradient. It is shown that allowance for defects of the atomic structure of a nanotube makes it possible to adequately describe the existing experimental data on nanotube electronic structure. In the framework of the same approach, the total density of electronic states is calculated for an intermolecular contact of (5, 5) and (10, 0) single-wall carbon nanotubes formed due to the creation of a 5-7 defect. It is shown that the electronic states related to the contact region and the 5-7 defect lie in vicinity of the Fermi level. (C) 2004 MAIK "Nauka/Interperiodica".
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev A. D., Gavrichkov V. A., Ovchinnikov S. G.
Заглавие : Quantum oscillations of resistance and magnetization in the degenerate semiconductor n-HgCr2Se4
Место публикации : J. Exp. Theor. Phys.: AMER INST PHYSICS, 1998. - Vol. 86, Is. 5. - P1026-1029. - ISSN 1063-7761, DOI 10.1134/1.558549
Примечания : Cited References: 6
Аннотация: In the magnetic field range Delta H = 8-60 kOe we observed and studied the anomalous oscillations in the magnetic field dependence of the resistance and magnetization of single crystals of n-HgCr2Se4. The absence of periodicity in 1/H in the Delta H = 8-20 kOe range can be explained by the non-Fermi-liquid behavior of the electron subsystem and agrees with the theory of the de Haas-van Alphen in systems with intermediate valence. In stronger fields, Delta H = 20-60 kOe, the amplitude of the fundamental harmonic decreases, with the number and amplitude of the higher-order harmonics increasing, As a result, noise is superimposed on the signal as magnetic field strength grows. The temperature dependence of the magnetization is the sum of the monotonic spin-wave contribution and the oscillating part. (C) 1998 American Institute of Physics. [S1063-7761(98)02205-7].
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : BELYAEV B. A., FROLOV G. I.
Заглавие : CONSTANT TENSION IN MAGNETIC FILM-SEMICONDUCTOR STRUCTURE DURING FERROMAGNETIC-RESONANCE
Место публикации : Zhurnal Tek. Fiz.: MEZHDUNARODNAYA KNIGA, 1980. - Vol. 50, Is. 6. - P1354-1355. - ISSN 0044-4642
Примечания : Cited References: 4
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : BELYAEV B. A., TYURNEV V. V., FROLOV G. I.
Заглавие : GALVANO-SPIN-WAVE RESONANCE IN A SEMICONDUCTOR FERROMAGNETIC LAMINAR STRUCTURE
Место публикации : Zhurnal Tek. Fiz.: MEZHDUNARODNAYA KNIGA, 1982. - Vol. 52, Is. 1. - P126-128. - ISSN 0044-4642
Примечания : Cited References: 2
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