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DOMAIN-WALL STABILIZATION IN CDCR2SE4 MAGNETIC SEMICONDUCTOR-FILMS / I. A. TURPANOV [и др.] // Fiz. Tverd. Tela. - 1982. - Vol. 24, Is. 6. - P. 1858-1860. - Cited References: 6 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

WOS
Доп.точки доступа:
TURPANOV, I. A.; CHZHAN, A. V.; KIM, P. D.; KONONOV, V. P.
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ERUKHIMOV, M. S.
SPIN-WAVE SPECTRUM AND ATTENUATION IN SIZE-QUANTIZED FERROMAGNETIC SEMICONDUCTOR-FILMS / M. S. ERUKHIMOV // Fiz. Tverd. Tela. - 1982. - Vol. 24, Is. 10. - P. 3096-3101. - Cited References: 17 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

WOS
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BELYAEV, B. A.
GALVANO-SPIN-WAVE RESONANCE IN A SEMICONDUCTOR FERROMAGNETIC LAMINAR STRUCTURE / B. A. BELYAEV, V. V. TYURNEV, G. I. FROLOV // Zhurnal Tek. Fiz. - 1982. - Vol. 52, Is. 1. - P. 126-128. - Cited References: 2 . - ISSN 0044-4642

РУБ Physics, Applied

WOS
Доп.точки доступа:
TYURNEV, V. V.; FROLOV, G. I.
}
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ZHIGALOV, V. S.
MAGNETIC AND SEMICONDUCTOR PROPERTIES OF IRON NITRIDE FILMS / V. S. ZHIGALOV, L. I. VERSHININA, G. I. FROLOV // Fiz. Tverd. Tela. - 1984. - Vol. 26, Is. 6. - P. 1887-1889. - Cited References: 4 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

WOS
Доп.точки доступа:
Vershinina, L. I.; Вершинина, Людмила Иосифовна; FROLOV, G. I.
}
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MULTIELECTRON ENERGY STRUCTURE AND PHYSICAL-PROPERTIES OF THE FERROMAGNETIC SEMICONDUCTOR CDCR2SE4 / V. A. GAVRICHKOV [и др.] // Zhurnal Eksperimentalnoi Teor. Fiz. - 1986. - Vol. 90, Is. 4. - P. 1275-1287. - Cited References: 36 . - ISSN 0044-4510

РУБ Physics, Multidisciplinary

WOS
Доп.точки доступа:
Gavrichkov, V. A.; Гавричков, Владимир Александрович; YERUKHIMOV, M. S.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Edelman, I. S.; Эдельман, Ирина Самсоновна
}
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TEMPERATURE-DEPENDENCE OF MOBILITY IN MAGNETIC SEMICONDUCTOR HGCR2SE4 / V. K. CHERNOV [и др.] // Fiz. Tverd. Tela. - 1986. - Vol. 28, Is. 1. - P. 289-291. - Cited References: 8 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

WOS
Доп.точки доступа:
CHERNOV, V. K.; GAVRICHKOV, V. A.; IVANOVA, N. B.; VEISIG, G. S.; BOYARSHINOV, Y. V.
}
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DOMAIN-STRUCTURE IN FILMS OF MAGNETIC CDCR2SE4 SEMICONDUCTOR / A. V. CHZHAN [и др.] // Fiz. Tverd. Tela. - 1984. - Vol. 26, Is. 4. - P. 1177-1179. - Cited References: 4 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

WOS
Доп.точки доступа:
CHZHAN, A. V.; KIM, P. D.; DROKIN, N. A.; TURPANOV, I. A.
}
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BELYAEV, B. A.
RESONANCE THERMOMAGNETIC EFFECT IN THE MAGNETIC-FILM SEMICONDUCTOR STRUCTURE / B. A. BELYAEV, V. V. TYURNEV, G. I. FROLOV // Zhurnal Tek. Fiz. - 1982. - Vol. 52, Is. 2. - P. 340-344. - Cited References: 4 . - ISSN 0044-4642

РУБ Physics, Applied

WOS
Доп.точки доступа:
TYURNEV, V. V.; FROLOV, G. I.
}
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Magnetic-field-driven electron transport in ferromagnetic/insulator/semiconductor hybrid structures / N. V. Volkov [et al.] // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. I4.4. - P. 214. - References: 3 . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
hybrid structures -- magnetoresistance -- magnetoimpedance

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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10.

    Formation of ferromagnetic Mn5Ge3 phase in Ge/Ag/Mn trilayers / A. A. Matsynin [et al.] // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. P10.13. - P. 481. - References: 2. - This study was supported by the RFBR (Grants 15-02-00948-A, 16-03-00069 А), and by the program UMNIK-2015 №0011727 . - ISBN 978-5-904603-06-9
   Перевод заглавия: Формирование ферромагнитной фазы Mn5Ge3 в Ge/Ag/Mn твехслойных пленках
Кл.слова (ненормированные):
diluted magnetic semiconductor -- spintronics -- ferromagnetic Mn5Ge3 -- thin-film solid-state reaction

Доп.точки доступа:
Matsynin, A. A.; Мацынин, Алексей Александрович; Myagkov, V. G.; Мягков, Виктор Григорьевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Zhigalov, V. S.; Жигалов, Виктор Степанович; Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Bondarenko, G. N.; Бондаренко, Галина Николаевна; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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11.

    Weak localization and size effects in thin In2O3 films prepared by autowave oxidation / I. A. Tambasov [et al.] // Physica E. - 2016. - Vol. 84. - P. 162-167, DOI 10.1016/j.physe.2016.06.005. - Cited References:70. - This study was supported by the Russian Foundation for Basic Research (Grants # 16-32-00302 MOJI_a, # 15-02-00948-A, # 16-03-00069-A), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the Program of Foundation for Promotion of Small Enterprises in Science and Technology (No. 6662 Gamma Y2015, 9607 Gamma Y/2015) ("UMNIK" Program). Electron microscopic studies were performed on the equipment of CCU KSC SB RAS. . - ISSN 1386-9477. - ISSN 1873-1759
   Перевод заглавия: Слабая локализация и размерные эффекты в тонких пленках In2O3 приготовленные автоволновым окислением

РУБ Nanoscience & Nanotechnology + Physics, Condensed Matter
Рубрики:
SOLID-STATE SYNTHESIS
   INDIUM TIN OXIDE
   DOPED ZNO FILMS
   OPTICAL-PROPERTIES
   MAGNETIC-FIELD
   NEGATIVE MAGNETORESISTANCE
   CARBON NANOTUBES
   TEMPERATURE
   SEMICONDUCTOR
   TRANSPORT
Кл.слова (ненормированные):
Thin indium oxide films -- Weak localization -- Electron-electron -- interaction -- Disordered semiconductors -- Nanostructured films -- Phase-coherent length
Аннотация: The negative magnetoresistance of thin In2O3 films, obtained by an autowave oxidation reaction, was detected within a temperature range of 4.2-80 K. The magnetoresistance was -1.35% at a temperature of 4.2 K and an external magnetic field of 1 T. A weak localization theory was used to explain the negative magnetoresistance and to determine the phase-coherence length in a temperature range of 4.2-80 K. The phase-coherence length was found to oscillate as the temperatures increased to around 30 K. From the maximum and minimum values of the oscillation of the phase-coherence length, it was suggested that the In2O3 film has two structure characteristic parameters. Transmission electron microscopy showed the structure of the thin In2O3 film to have structural features of a crystal phase- amorphous phase. It was found that the crystalline phase characteristic size was consistent with the maximum phase-coherence length and the amorphous phase characteristic size was consistent with the minimum phase-coherence length. It has been suggested that the temperature measurements of the magnetoresistance and the theory of weak localization can be used to evaluate the structural features of nanocomposite or nanostructured thin films. (C) 2016 Elsevier B.V. All rights reserved.

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Держатели документа:
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Akademgorodok 50, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Svobodny Prospect 79, Krasnoyarsk 660041, Russia.
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk Worker 31, Krasnoyarsk 660014, Russia.

Доп.точки доступа:
Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Tarasov, A. S.; Тарасов, Антон Сергеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Myagkov, V. G.; Мягков, Виктор Григорьевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Zhigalov, V. S.; Жигалов, Виктор Степанович; Matsynin, A. A.; Мацынин, Алексей Александрович; Tambasova, E. V.; Russian Foundation for Basic Research [16-32-00302 MOJI_a, 15-02-00948-A, 16-03-00069-A]; Council for Grants of the President of the Russian Federation [SP-317.2015.1]; Program of Foundation for Promotion of Small Enterprises in Science and Technology ("UMNIK" Program) [6662GammaY2015, 9607GammaY/2015]
}
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12.

Self-Assembly of Colloidal Semiconductor Quantum Dots Controlled Solely by Laser-Induced Interaction / A. S. Tsipotan [и др.] // The PCNSPA Conference 2016 : book abstracts. - 2016. - P92-93 ; The PCNSPA Conference 2016programme. - 2016. - P8

Доп.точки доступа:
Tsipotan, A. S.; Slabko, V. V.; Слабко, Виталий Васильевич; Gerasimova, M. A.; Aleksandrovsky, A. S.; Александровский, Александр Сергеевич; Photonic colloidal nanostructures: synthesis, properties and applications(17 ; 2016 ; 27th June - 1st July ; St. Petersburg)

}
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13.

Loseva, G. V.
Metal-semiconductor high-temperature transitions in coxcr1-XS system / G. V. Loseva, G. M. Abramova, A. V. Baranov // Fiz. Tverd. Tela. - 1981. - Vol. 23, Is. 5. - P. 1519-1521. - Cited References: 3 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

WOS
Доп.точки доступа:
Abramova, G. M.; Абрамова, Галина Михайловна; Baranov, A. V.
}
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14.

HIGH-TEMPERATURE FERROMAGNETISM AND THE METAL-SEMICONDUCTOR TRANSITION IN AN IRON CHROMIUM SULFO-SPINEL / G. A. PETRAKOVSKY [и др.] // Zhurnal Eksperimentalnoi Teor. Fiz. - 1980. - Vol. 79, Is. 6. - P. 2413-2421. - Cited References: 10 . - ISSN 0044-4510

РУБ Physics, Multidisciplinary

WOS
Доп.точки доступа:
Petrakovskiy, G. A.; Петраковский, Герман Антонович; LOSYEVA, G. V.; SOKOLOVICH, V. V.; IKONNIKOV, V. P.; BARANOV, A. V.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
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15.

BELYAEV, B. A.
CONSTANT TENSION IN MAGNETIC FILM-SEMICONDUCTOR STRUCTURE DURING FERROMAGNETIC-RESONANCE / B. A. BELYAEV, G. I. FROLOV // Zhurnal Tek. Fiz. - 1980. - Vol. 50, Is. 6. - P. 1354-1355. - Cited References: 4 . - ISSN 0044-4642

РУБ Physics, Applied

WOS
Доп.точки доступа:
FROLOV, G. I.
}
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16.

IVANOVA, N. B.
THE TEMPERATURE-DEPENDENCE OF MAGNETIZATION IN THE MAGNETIC SEMICONDUCTOR HGCR2SE4 / N. B. IVANOVA, V. K. CHERNOV // Fiz. Tverd. Tela. - 1986. - Vol. 28, Is. 6. - P. 1941-1943. - Cited References: 4 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

WOS
Доп.точки доступа:
CHERNOV, V. K.
}
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17.

Optically driven conductivity and magnetoresistance in a manganite-based tunnel structure / N. V. Volkov [et al.] // J. Phys. D. - 2009. - Vol. 42, Is. 20. - Ст. 205009, DOI 10.1088/0022-3727/42/20/205009. - Cited References: 13. - This study was supported by the Russian Foundation for Basic Research (Projects Nos 08-02-00259-a and 08-02-00397-a) and the Division of Physical Sciences of the RAS, Programme 'Spin-dependent Effects in Solids and Spintronics' (Project No 2.4.2 of the Siberian Branch of the RAS). . - ISSN 0022-3727

РУБ Physics, Applied
Рубрики:
JUNCTIONS
Кл.слова (ненормированные):
Conducting layers -- Current-in-plane geometry -- Dielectric layer -- Electron hole pairs -- Interband absorption -- Magnetic tunnel junction -- Magnetic tunnels -- Multilayer structures -- Optical radiations -- Photoinduced change -- Potential barriers -- Radiation power density -- Threshold characters -- Tunnel structures -- Electric resistance -- Lanthanum -- Light -- Magnetic field effects -- Magnetoelectronics -- Magnetoresistance -- Manganese compounds -- Oxide minerals -- Photovoltaic effects -- Semiconductor junctions -- Transport properties -- Vehicular tunnels -- Wind tunnels -- Tunnel junctions
Аннотация: In the multilayer structure, La(0.7)Sr(0.3)MnO(3)/depleted manganite layer/MnSi, the photovoltaic effect has been discovered. The depleted manganite layer in the structure is dielectric and serves as a potential barrier between the ferromagnetic conducting La(0.7)Sr(0.3)MnO(3) and MnSi layers by the formation of a magnetic tunnel junction. The photoinduced changes in the transport properties of the magnetic tunnel structure have been observed in the current-in-plane geometry. The changes are reversible and saturate at radiation power densities over 30 mW cm(-2). The photovoltaic effect has a threshold character: it reveals only at h nu > 1.17 eV. Most likely, the effect of optical radiation is related to the formation of electron-hole pairs due to interband absorption of light in the dielectric layer. A photocurrent through the tunnel junctions separating the conducting layers causes a redistribution of the current channels between the conducting layers, which influences the conductivity and the magnetoresistance of the structure.

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Держатели документа:
[Volkov, N. V.
Kim, P. D.
Eremin, E. V.
Patrin, G. S.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Volkov, N. V.
Patrin, G. S.] Siberian Fed Univ, Inst Engn Phys, Krasnoyarsk 660041, Russia
[Lee, C. G.] Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South Korea
[Eremin, E. V.] Siberian State Aerosp Univ, Inst Space Technol, Krasnoyarsk 660014, Russia
ИФ СО РАН
Kirensky Institute of Physics, Russian Academy of Science, Siberian Branch, Krasnoyarsk 660036, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk 660041, Russian Federation
Changwon National University, School of Nano and Advanced Materials Engineering, Gyeongnam 641-773, Changwon, South Korea
Institute of Space Technology, Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Lee, C. G.; Kim, P. D.; Ким, Пётр Дементьевич; Eremin, E. V.; Еремин, Евгений Владимирович; Patrin, G. S.; Патрин, Геннадий Семёнович; Russian Foundation for Basic Research [08-02-00259-a, 08-02-00397-a]; Division of Physical Sciences of the RAS; [2.4.2]
}
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18.

Evolution of the optical absorption spectra and electronic structure of the VBO3 crystal under high pressures / N. V. Kazak [et al.] // J. Exp. Theor. Phys. - 2009. - Vol. 109, Is. 3. - P. 455-465, DOI 10.1134/S1063776109090118. - Cited References: 27. - We would like to thank A. D. Vasil'ev for performing the X-ray diffraction investigations.This study was supported by the Russian Foundation for Basic Research (project nos. 07-02-00490a, 08-02-00897a, 08-02-90708 mob_st, 09-02-00171a, and 07-02-00226), the Federal Agency for Science and Innovation (Rosnauka) (project no. MK-4278.2008.2, contract no. 01.164.12.HB11), and the Branch of Physical Sciences of the Russian Academy of Sciences within the framework of the program "Strongly Correlated Electrons." . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
BAND-STRUCTURE
   PHASE-TRANSITION
   FEBO3
   FE1-XVXBO3
   STATE
   MODEL
Кл.слова (ненормированные):
Charge-transfer excitations -- D-d transitions -- Ferromagnetic semiconductor -- Fundamental absorption edge -- High pressure -- Optical absorption spectrum -- Absorption -- Boron -- Boron compounds -- Electronic properties -- Electronic structure -- Optical materials -- Oxygen -- Vanadium -- Light absorption
Аннотация: The evolution of optical absorption spectra of the ferromagnetic semiconductor VBO3 under high pressures up to 70 GPa has been investigated. It has been revealed that, below the fundamental absorption edge (E (g1) = 3.02 eV), the spectra exhibit a series of bands V1 (2.87 eV), V2 (2.45 eV), V3 (1.72 eV), and V4(1.21 eV) due to the d-d transitions in the V3+ ion and charge-transfer excitations. A model of the electronic structure of the VBO3 semiconductor has been constructed. This model combines the one-electron description of the s and p states of boron and oxygen and the many-electron description of the vanadium d states.

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Публикация на русском языке Эволюция спектров оптического поглощения и электронной структуры в кристалле VBO[3] при воздействии высоких давлений [Текст] / Н. В. Казак [и др.] // Журн. эксперим. и теор. физ. - 2009. - Т. 136 Вып. 3. - С. 531-542

Держатели документа:
[Kazak, N. V.
Ovchinnikov, S. G.
Edel'man, I. S.
Rudenko, V. V.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Gavriliuk, A. G.
Lyubutin, I. S.] Russian Acad Sci, AV Shubnikov Crystallog Inst, Moscow 119333, Russia
[Gavriliuk, A. G.] Russian Acad Sci, Inst High Pressure Phys, Troitsk 142190, Moscow Oblast, Russia
[Ovchinnikov, S. G.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk 660036, Russian Federation
Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow 119333, Russian Federation
Institute for High Pressure Physics, Russian Academy of Sciences, Troitsk, Moscow oblast 142190, Russian Federation
Siberian Federal University, Svobodny pr. 79, Krasnoyarsk 660041, Russian Federation

Доп.точки доступа:
Kazak, N. V.; Казак, Наталья Валерьевна; Gavriliuk, A. G.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Lyubutin, I. S.; Edel'man, I. S.; Edelman, I. S.; Rudenko, V. V.; Руденко, Валерий Васильевич; Russian Foundation for Basic Research [07-02-00490a, 08-02-00897a, 08-02-90708 mob_st, 09-02-00171a, 07-02-00226]; Federal Agency for Science and Innovation [MK-4278.2008.2, 01.164.12.HB11]; Russian Academy of Sciences
}
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19.

Nazmitdinov, R. G.
Spin control in semiconductor quantum wires: Rashba and Dresselhaus interaction / R. G. Nazmitdinov, K. N. Pichugin, M. . Valin-Rodriguez // Phys. Rev. B. - 2009. - Vol. 79, Is. 19. - Ст. 193303, DOI 10.1103/PhysRevB.79.193303. - Cited References: 20. - This work was partly supported by Ministerio de Ciencia e Innovacion (Spain), Grant No. FIS2008-00781/FIS and RFBR under Grants No. 08-02-00118 and No. 09-02-98005 (Russia). . - ISSN 1098-0121

РУБ Physics, Condensed Matter
Рубрики:
MAGNETIC-FIELDS
SPINTRONICS
Кл.слова (ненормированные):
semiconductor quantum wires -- spin polarised transport -- spin-orbit interactions
Аннотация: We show that spin precession in a semiconductor quantum wire, caused by the Rashba and the Dresselhaus interactions (both of arbitrary strengths), can be suppressed by dint of an in-plane magnetic field. Using a condition of the translational invariance in the longitudinal coordinate, we found another type of symmetry, which arises at a particular set of intensity and orientation of the magnetic field and explains this suppression. Based on our findings, we propose a transport experiment to measure the strengths of the Rashba and the Dresselhaus interactions.

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Держатели документа:
[Nazmitdinov, R. G.] Univ Illes Balears, Dept Fis, E-07122 Palma de Mallorca, Spain
[Pichugin, K. N.] LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
[Valin-Rodriguez, M.] Conselleria Educ Cultura, E-07004 Palma de Mallorca, Spain
[Nazmitdinov, R. G.] Joint Inst Nucl Res, Bogoliubov Lab Theoret Phys, Dubna 141980, Russia
ИФ СО РАН
Departament de Fisica, Universitat de les Illes Balears, E-07122 Palma de Mallorca, Spain
Bogoliubov Laboratory of Theoretical Physics, Joint Institute for Nuclear Research, 141980 Dubna, Russian Federation
Kirensky Institute of Physics, Akademgorodok 50/38, 660036 Krasnoyarsk, Russian Federation
Conselleria d'Educacio i Cultura, E-07004 Palma de Mallorca, Spain

Доп.точки доступа:
Pichugin, K. N.; Пичугин, Константин Николаевич; Valin-Rodriguez, M.
}
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20.

Resonant tunneling in time-periodically modulated semiconductor nanostructures / G. P. Berman [et al.] // Physica B. - 1996. - Vol. 225, Is. 1-2. - P. 1-22, DOI 10.1016/0921-4526(96)00233-5. - Cited References: 39 . - ISSN 0921-4526

РУБ Physics, Condensed Matter
Рубрики:
DOUBLE BARRIERS
TRANSMISSION
HETEROSTRUCTURES
Аннотация: We consider a semiconductor (AlGaAs/GaAs/AlGaAs) double-barrier resonant tunneling nanostructure (DBRTS), in which the bottom of the potential well is modulated by an external periodic potential V(t) = V-mod cos Omega t. We examine the resonance response to both mono-energetic and spatially localized incident electrons, extending previous results in three ways. First, we study numerically the resonant characteristics in the transmission probabilities as functions of both the electron's energy and the frequency of the external field. We find that new low-frequency resonant peaks appear in the frequency dependence of the transmission probabilities and discuss the origin and possible experimental observation of these peaks. Second, we develop an analytic perturbation theory (valid for small values of the parameter lambda = V-mod/h Omega) describing the processes of absorption and emission of single quanta of the modulation field and show that this perturbative treatment agrees well with the results of numerical calculations in the appropriate regions, up to and including the regime in which the one-quantum processes saturate. Third, for localized (Gaussian) incident wave packets, we show numerically that temporal modulations of the potential well in the DBRTS can induce spatial modulations in the transmitted and reflected wave packets. We develop a simple qualitative picture that explains our results. Finally, we estimate characteristic values of the parameters relevant for possible observation of these effects in laboratory experiments.

WOS
Держатели документа:
LOS ALAMOS NATL LAB,CNLS,LOS ALAMOS,NM 87545
LV KIRENSKII INST PHYS,DEPT PHYS,KRASNOYARSK 660036,RUSSIA
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
ИФ СО РАН

Доп.точки доступа:
Berman, G. P.; Берман, Геннадий Петрович; Bulgakov, E. N.; Булгаков, Евгений Николаевич; Campbell, D. K.; Sadreev, A. F.; Садреев, Алмаз Фаттахович
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