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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : TURPANOV I. A., CHZHAN A. V., KIM P. D., KONONOV V. P.
Заглавие : DOMAIN-WALL STABILIZATION IN CDCR2SE4 MAGNETIC SEMICONDUCTOR-FILMS
Место публикации : Fiz. Tverd. Tela: MEZHDUNARODNAYA KNIGA, 1982. - Vol. 24, Is. 6. - P1858-1860. - ISSN 0367-3294
Примечания : Cited References: 6
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : ERUKHIMOV M. S.
Заглавие : SPIN-WAVE SPECTRUM AND ATTENUATION IN SIZE-QUANTIZED FERROMAGNETIC SEMICONDUCTOR-FILMS
Место публикации : Fiz. Tverd. Tela: MEZHDUNARODNAYA KNIGA, 1982. - Vol. 24, Is. 10. - P3096-3101. - ISSN 0367-3294
Примечания : Cited References: 17
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : BELYAEV B. A., TYURNEV V. V., FROLOV G. I.
Заглавие : GALVANO-SPIN-WAVE RESONANCE IN A SEMICONDUCTOR FERROMAGNETIC LAMINAR STRUCTURE
Место публикации : Zhurnal Tek. Fiz.: MEZHDUNARODNAYA KNIGA, 1982. - Vol. 52, Is. 1. - P126-128. - ISSN 0044-4642
Примечания : Cited References: 2
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : ZHIGALOV V. S., Vershinina L. I., FROLOV G. I.
Заглавие : MAGNETIC AND SEMICONDUCTOR PROPERTIES OF IRON NITRIDE FILMS
Место публикации : Fiz. Tverd. Tela: MEZHDUNARODNAYA KNIGA, 1984. - Vol. 26, Is. 6. - P1887-1889. - ISSN 0367-3294
Примечания : Cited References: 4
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gavrichkov V. A., YERUKHIMOV M. S., Ovchinnikov S. G., Edelman I. S.
Заглавие : MULTIELECTRON ENERGY STRUCTURE AND PHYSICAL-PROPERTIES OF THE FERROMAGNETIC SEMICONDUCTOR CDCR2SE4
Место публикации : Zhurnal Eksperimentalnoi Teor. Fiz.: MEZHDUNARODNAYA KNIGA, 1986. - Vol. 90, Is. 4. - P1275-1287. - ISSN 0044-4510
Примечания : Cited References: 36
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : CHERNOV V. K., GAVRICHKOV V. A., IVANOVA N. B., VEISIG G. S., BOYARSHINOV Y. V.
Заглавие : TEMPERATURE-DEPENDENCE OF MOBILITY IN MAGNETIC SEMICONDUCTOR HGCR2SE4
Место публикации : Fiz. Tverd. Tela: MEZHDUNARODNAYA KNIGA, 1986. - Vol. 28, Is. 1. - P289-291. - ISSN 0367-3294
Примечания : Cited References: 8
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : CHZHAN A. V., KIM P. D., DROKIN N. A., TURPANOV I. A.
Заглавие : DOMAIN-STRUCTURE IN FILMS OF MAGNETIC CDCR2SE4 SEMICONDUCTOR
Место публикации : Fiz. Tverd. Tela: MEZHDUNARODNAYA KNIGA, 1984. - Vol. 26, Is. 4. - P1177-1179. - ISSN 0367-3294
Примечания : Cited References: 4
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : BELYAEV B. A., TYURNEV V. V., FROLOV G. I.
Заглавие : RESONANCE THERMOMAGNETIC EFFECT IN THE MAGNETIC-FILM SEMICONDUCTOR STRUCTURE
Место публикации : Zhurnal Tek. Fiz.: MEZHDUNARODNAYA KNIGA, 1982. - Vol. 52, Is. 2. - P340-344. - ISSN 0044-4642
Примечания : Cited References: 4
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Magnetic-field-driven electron transport in ferromagnetic/insulator/semiconductor hybrid structures
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.I4.4. - P.214. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : References: 3
Ключевые слова (''Своб.индексиров.''): hybrid structures--magnetoresistance--magnetoimpedance
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10.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Matsynin A. A., Myagkov V. G., Bykova L. E., Zhigalov V. S., Tambasov I. A., Bondarenko G. N.
Заглавие : Formation of ferromagnetic Mn5Ge3 phase in Ge/Ag/Mn trilayers
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.P10.13. - P.481. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : References: 2. - This study was supported by the RFBR (Grants 15-02-00948-A, 16-03-00069 А), and by the program UMNIK-2015 №0011727
Ключевые слова (''Своб.индексиров.''): diluted magnetic semiconductor--spintronics--ferromagnetic mn5ge3--thin-film solid-state reaction
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11.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Tarasov A. S., Volochaev M. N., Rautskii M. V., Myagkov V. G., Bykova L. E., Zhigalov V. S., Matsynin A. A., Tambasova E. V.
Заглавие : Weak localization and size effects in thin In2O3 films prepared by autowave oxidation
Коллективы : Russian Foundation for Basic Research [16-32-00302 MOJI_a, 15-02-00948-A, 16-03-00069-A]; Council for Grants of the President of the Russian Federation [SP-317.2015.1]; Program of Foundation for Promotion of Small Enterprises in Science and Technology ("UMNIK" Program) [6662GammaY2015, 9607GammaY/2015]
Место публикации : Physica E: Elsevier Science, 2016. - Vol. 84. - P.162-167. - ISSN 1386-9477, DOI 10.1016/j.physe.2016.06.005. - ISSN 1873-1759(eISSN)
Примечания : Cited References:70. - This study was supported by the Russian Foundation for Basic Research (Grants # 16-32-00302 MOJI_a, # 15-02-00948-A, # 16-03-00069-A), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the Program of Foundation for Promotion of Small Enterprises in Science and Technology (No. 6662 Gamma Y2015, 9607 Gamma Y/2015) ("UMNIK" Program). Electron microscopic studies were performed on the equipment of CCU KSC SB RAS.
Предметные рубрики: SOLID-STATE SYNTHESIS
INDIUM TIN OXIDE
DOPED ZNO FILMS
OPTICAL-PROPERTIES
MAGNETIC-FIELD
NEGATIVE MAGNETORESISTANCE
CARBON NANOTUBES
TEMPERATURE
SEMICONDUCTOR
TRANSPORT
Ключевые слова (''Своб.индексиров.''): thin indium oxide films--weak localization--electron-electron--interaction--disordered semiconductors--nanostructured films--phase-coherent length
Аннотация: The negative magnetoresistance of thin In2O3 films, obtained by an autowave oxidation reaction, was detected within a temperature range of 4.2-80 K. The magnetoresistance was -1.35% at a temperature of 4.2 K and an external magnetic field of 1 T. A weak localization theory was used to explain the negative magnetoresistance and to determine the phase-coherence length in a temperature range of 4.2-80 K. The phase-coherence length was found to oscillate as the temperatures increased to around 30 K. From the maximum and minimum values of the oscillation of the phase-coherence length, it was suggested that the In2O3 film has two structure characteristic parameters. Transmission electron microscopy showed the structure of the thin In2O3 film to have structural features of a crystal phase- amorphous phase. It was found that the crystalline phase characteristic size was consistent with the maximum phase-coherence length and the amorphous phase characteristic size was consistent with the minimum phase-coherence length. It has been suggested that the temperature measurements of the magnetoresistance and the theory of weak localization can be used to evaluate the structural features of nanocomposite or nanostructured thin films. (C) 2016 Elsevier B.V. All rights reserved.
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12.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tsipotan A. S., Slabko V. V., Gerasimova M. A., Aleksandrovsky A. S.
Заглавие : Self-Assembly of Colloidal Semiconductor Quantum Dots Controlled Solely by Laser-Induced Interaction
Коллективы : Photonic colloidal nanostructures: synthesis, properties and applications
Место публикации : The PCNSPA Conference 2016: book abstracts. - 2016. - С. 92-93; \b The PCNSPA Conference 2016: programme. - 2016. - С. 8
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13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Loseva G. V., Abramova G. M., Baranov A. V.
Заглавие : Metal-semiconductor high-temperature transitions in coxcr1-XS system
Место публикации : Fiz. Tverd. Tela. - 1981. - Vol. 23, Is. 5. - P.1519-1521. - ISSN 0367-3294
Примечания : Cited References: 3
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14.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Petrakovskiy G. A., LOSYEVA G. V., SOKOLOVICH V. V., IKONNIKOV V. P., BARANOV A. V., Ovchinnikov S. G.
Заглавие : HIGH-TEMPERATURE FERROMAGNETISM AND THE METAL-SEMICONDUCTOR TRANSITION IN AN IRON CHROMIUM SULFO-SPINEL
Место публикации : Zhurnal Eksperimentalnoi Teor. Fiz.: MEZHDUNARODNAYA KNIGA, 1980. - Vol. 79, Is. 6. - P2413-2421. - ISSN 0044-4510
Примечания : Cited References: 10
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15.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : BELYAEV B. A., FROLOV G. I.
Заглавие : CONSTANT TENSION IN MAGNETIC FILM-SEMICONDUCTOR STRUCTURE DURING FERROMAGNETIC-RESONANCE
Место публикации : Zhurnal Tek. Fiz.: MEZHDUNARODNAYA KNIGA, 1980. - Vol. 50, Is. 6. - P1354-1355. - ISSN 0044-4642
Примечания : Cited References: 4
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16.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : IVANOVA N. B., CHERNOV V. K.
Заглавие : THE TEMPERATURE-DEPENDENCE OF MAGNETIZATION IN THE MAGNETIC SEMICONDUCTOR HGCR2SE4
Место публикации : Fiz. Tverd. Tela: MEZHDUNARODNAYA KNIGA, 1986. - Vol. 28, Is. 6. - P1941-1943. - ISSN 0367-3294
Примечания : Cited References: 4
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17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Lee C. G., Kim P. D., Eremin E. V., Patrin G. S.
Заглавие : Optically driven conductivity and magnetoresistance in a manganite-based tunnel structure
Коллективы : Russian Foundation for Basic Research [08-02-00259-a, 08-02-00397-a]; Division of Physical Sciences of the RAS; [2.4.2]
Место публикации : J. Phys. D. - 2009. - Vol. 42, Is. 20. - Ст.205009. - ISSN 0022-3727, DOI 10.1088/0022-3727/42/20/205009
Примечания : Cited References: 13. - This study was supported by the Russian Foundation for Basic Research (Projects Nos 08-02-00259-a and 08-02-00397-a) and the Division of Physical Sciences of the RAS, Programme 'Spin-dependent Effects in Solids and Spintronics' (Project No 2.4.2 of the Siberian Branch of the RAS).
Предметные рубрики: JUNCTIONS
Ключевые слова (''Своб.индексиров.''): conducting layers--current-in-plane geometry--dielectric layer--electron hole pairs--interband absorption--magnetic tunnel junction--magnetic tunnels--multilayer structures--optical radiations--photoinduced change--potential barriers--radiation power density--threshold characters--tunnel structures--electric resistance--lanthanum--light--magnetic field effects--magnetoelectronics--magnetoresistance--manganese compounds--oxide minerals--photovoltaic effects--semiconductor junctions--transport properties--vehicular tunnels--wind tunnels--tunnel junctions
Аннотация: In the multilayer structure, La(0.7)Sr(0.3)MnO(3)/depleted manganite layer/MnSi, the photovoltaic effect has been discovered. The depleted manganite layer in the structure is dielectric and serves as a potential barrier between the ferromagnetic conducting La(0.7)Sr(0.3)MnO(3) and MnSi layers by the formation of a magnetic tunnel junction. The photoinduced changes in the transport properties of the magnetic tunnel structure have been observed in the current-in-plane geometry. The changes are reversible and saturate at radiation power densities over 30 mW cm(-2). The photovoltaic effect has a threshold character: it reveals only at h nu 1.17 eV. Most likely, the effect of optical radiation is related to the formation of electron-hole pairs due to interband absorption of light in the dielectric layer. A photocurrent through the tunnel junctions separating the conducting layers causes a redistribution of the current channels between the conducting layers, which influences the conductivity and the magnetoresistance of the structure.
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18.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kazak N. V., Gavriliuk A. G., Ovchinnikov S. G., Lyubutin I. S., Edel'man I. S., Rudenko V. V.
Заглавие : Evolution of the optical absorption spectra and electronic structure of the VBO3 crystal under high pressures
Коллективы : Russian Foundation for Basic Research [07-02-00490a, 08-02-00897a, 08-02-90708 mob_st, 09-02-00171a, 07-02-00226]; Federal Agency for Science and Innovation [MK-4278.2008.2, 01.164.12.HB11]; Russian Academy of Sciences
Место публикации : J. Exp. Theor. Phys. - 2009. - Vol. 109, Is. 3. - P.455-465. - ISSN 1063-7761, DOI 10.1134/S1063776109090118
Примечания : Cited References: 27. - We would like to thank A. D. Vasil'ev for performing the X-ray diffraction investigations.This study was supported by the Russian Foundation for Basic Research (project nos. 07-02-00490a, 08-02-00897a, 08-02-90708 mob_st, 09-02-00171a, and 07-02-00226), the Federal Agency for Science and Innovation (Rosnauka) (project no. MK-4278.2008.2, contract no. 01.164.12.HB11), and the Branch of Physical Sciences of the Russian Academy of Sciences within the framework of the program "Strongly Correlated Electrons."
Предметные рубрики: BAND-STRUCTURE
PHASE-TRANSITION
FEBO3
FE1-XVXBO3
STATE
MODEL
Ключевые слова (''Своб.индексиров.''): charge-transfer excitations--d-d transitions--ferromagnetic semiconductor--fundamental absorption edge--high pressure--optical absorption spectrum--absorption--boron--boron compounds--electronic properties--electronic structure--optical materials--oxygen--vanadium--light absorption
Аннотация: The evolution of optical absorption spectra of the ferromagnetic semiconductor VBO3 under high pressures up to 70 GPa has been investigated. It has been revealed that, below the fundamental absorption edge (E (g1) = 3.02 eV), the spectra exhibit a series of bands V1 (2.87 eV), V2 (2.45 eV), V3 (1.72 eV), and V4(1.21 eV) due to the d-d transitions in the V3+ ion and charge-transfer excitations. A model of the electronic structure of the VBO3 semiconductor has been constructed. This model combines the one-electron description of the s and p states of boron and oxygen and the many-electron description of the vanadium d states.
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19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Nazmitdinov R. G., Pichugin K. N., Valin-Rodriguez M.
Заглавие : Spin control in semiconductor quantum wires: Rashba and Dresselhaus interaction
Место публикации : Phys. Rev. B: AMER PHYSICAL SOC, 2009. - Vol. 79, Is. 19. - Ст.193303. - ISSN 1098-0121, DOI 10.1103/PhysRevB.79.193303
Примечания : Cited References: 20. - This work was partly supported by Ministerio de Ciencia e Innovacion (Spain), Grant No. FIS2008-00781/FIS and RFBR under Grants No. 08-02-00118 and No. 09-02-98005 (Russia).
Предметные рубрики: MAGNETIC-FIELDS
SPINTRONICS
Ключевые слова (''Своб.индексиров.''): semiconductor quantum wires--spin polarised transport--spin-orbit interactions
Аннотация: We show that spin precession in a semiconductor quantum wire, caused by the Rashba and the Dresselhaus interactions (both of arbitrary strengths), can be suppressed by dint of an in-plane magnetic field. Using a condition of the translational invariance in the longitudinal coordinate, we found another type of symmetry, which arises at a particular set of intensity and orientation of the magnetic field and explains this suppression. Based on our findings, we propose a transport experiment to measure the strengths of the Rashba and the Dresselhaus interactions.
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20.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Berman G. P., Bulgakov E. N., Campbell D. K., Sadreev A. F.
Заглавие : Resonant tunneling in time-periodically modulated semiconductor nanostructures
Место публикации : Physica B. - 1996. - Vol. 225, Is. 1-2. - P.1-22. - ISSN 0921-4526, DOI 10.1016/0921-4526(96)00233-5
Примечания : Cited References: 39
Предметные рубрики: DOUBLE BARRIERS
TRANSMISSION
HETEROSTRUCTURES
Аннотация: We consider a semiconductor (AlGaAs/GaAs/AlGaAs) double-barrier resonant tunneling nanostructure (DBRTS), in which the bottom of the potential well is modulated by an external periodic potential V(t) = V-mod cos Omega t. We examine the resonance response to both mono-energetic and spatially localized incident electrons, extending previous results in three ways. First, we study numerically the resonant characteristics in the transmission probabilities as functions of both the electron's energy and the frequency of the external field. We find that new low-frequency resonant peaks appear in the frequency dependence of the transmission probabilities and discuss the origin and possible experimental observation of these peaks. Second, we develop an analytic perturbation theory (valid for small values of the parameter lambda = V-mod/h Omega) describing the processes of absorption and emission of single quanta of the modulation field and show that this perturbative treatment agrees well with the results of numerical calculations in the appropriate regions, up to and including the regime in which the one-quantum processes saturate. Third, for localized (Gaussian) incident wave packets, we show numerically that temporal modulations of the potential well in the DBRTS can induce spatial modulations in the transmitted and reflected wave packets. We develop a simple qualitative picture that explains our results. Finally, we estimate characteristic values of the parameters relevant for possible observation of these effects in laboratory experiments.
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