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    Аверьянов, Евгений Михайлович.
    Новые методы исследования ориентационного порядка одноосных молекулярных пленок на основе оптических данных / Е. М. Аверьянов // Жидк. кристаллы и их практич. использ. - 2020. - Т. 20, № 1. - С. 41-46 ; Liq. Cryst. Appl., DOI 10.18083/LCAppl.2020.1.41. - Библиогр.: 7 . - ISSN 1991-3966
   Перевод заглавия: New methods for studying the orientation order of uniaxial molecular films on the base of optical data
Кл.слова (ненормированные):
тонкие молекулярные пленки -- органические полупроводники -- PTCDA -- ориентационный порядок -- эффекты локального поля -- molecular thin films -- organic semiconductors -- PTCDA -- orientation order -- local-field effects
Аннотация: Установлена связь компонент ε(1,2)j(ω) диэлектрической функции εj(ω) = ε1j(ω) + iε2j(ω) для одноосной молекулярной пленки в области изолированной полосы поглощения света, поляризованного вдоль (j = ||) и нормально (j = ⊥) оптической оси пленки, с параметром ориентационного порядка S дипольных моментов молекулярных переходов, отвечающих данной полосе поглощения. Развиты новые методы определения S, подтвержденные для пленки органического полупроводника PTCDA нанометровой толщины с известными зависимостями ε(1,2)j(ω) в областях прозрачности и низкочастотного электронного поглощения. Показано влияние ориентационного порядка и анизотропии динамических диполь-дипольных межмолекулярных взаимодействий (эффектов локального поля) на положение максимумов полос ε2j(ω).
The components ε(1,2)j(ω) of the dielectric function εj(ω) = ε1j(ω) + iε2j(ω) for uniaxial molecular film in the region of an isolated absorption band of the light polarized along (j = ||) and across (j = ⊥) the film optical axis were considered. The connection of the components with the orientation order parameter S of the dipole moments of molecular transitions corresponding to a given absorption band was established. New methods for determining S are developed. They are confirmed for the organic semiconductor PTCDA film of nanoscale thickness with the known dependences ε(1,2)j(ω) in the transparency and low-frequency electron absorption regions. The effect of the orientation order and anisotropy of dynamic dipole-dipole intermolecular interactions (local-field effects) on the maxima position of the ε2j(ω) bands was shown.

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Держатели документа:
Институт физики им. Л. В. Киренского, ФИЦ КНЦ СО РАН, Академгородок, 50, строение № 38, 660036 Красноярск, Россия

Доп.точки доступа:
Aver'yanov, E. M.

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    Weak localization and size effects in thin In2O3 films prepared by autowave oxidation / I. A. Tambasov [et al.] // Physica E. - 2016. - Vol. 84. - P. 162-167, DOI 10.1016/j.physe.2016.06.005. - Cited References:70. - This study was supported by the Russian Foundation for Basic Research (Grants # 16-32-00302 MOJI_a, # 15-02-00948-A, # 16-03-00069-A), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the Program of Foundation for Promotion of Small Enterprises in Science and Technology (No. 6662 Gamma Y2015, 9607 Gamma Y/2015) ("UMNIK" Program). Electron microscopic studies were performed on the equipment of CCU KSC SB RAS. . - ISSN 1386-9477. - ISSN 1873-1759
   Перевод заглавия: Слабая локализация и размерные эффекты в тонких пленках In2O3 приготовленные автоволновым окислением

РУБ Nanoscience & Nanotechnology + Physics, Condensed Matter
Рубрики:
SOLID-STATE SYNTHESIS
   INDIUM TIN OXIDE
   DOPED ZNO FILMS
   OPTICAL-PROPERTIES
   MAGNETIC-FIELD
   NEGATIVE MAGNETORESISTANCE
   CARBON NANOTUBES
   TEMPERATURE
   SEMICONDUCTOR
   TRANSPORT
Кл.слова (ненормированные):
Thin indium oxide films -- Weak localization -- Electron-electron -- interaction -- Disordered semiconductors -- Nanostructured films -- Phase-coherent length
Аннотация: The negative magnetoresistance of thin In2O3 films, obtained by an autowave oxidation reaction, was detected within a temperature range of 4.2-80 K. The magnetoresistance was -1.35% at a temperature of 4.2 K and an external magnetic field of 1 T. A weak localization theory was used to explain the negative magnetoresistance and to determine the phase-coherence length in a temperature range of 4.2-80 K. The phase-coherence length was found to oscillate as the temperatures increased to around 30 K. From the maximum and minimum values of the oscillation of the phase-coherence length, it was suggested that the In2O3 film has two structure characteristic parameters. Transmission electron microscopy showed the structure of the thin In2O3 film to have structural features of a crystal phase- amorphous phase. It was found that the crystalline phase characteristic size was consistent with the maximum phase-coherence length and the amorphous phase characteristic size was consistent with the minimum phase-coherence length. It has been suggested that the temperature measurements of the magnetoresistance and the theory of weak localization can be used to evaluate the structural features of nanocomposite or nanostructured thin films. (C) 2016 Elsevier B.V. All rights reserved.

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Держатели документа:
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Akademgorodok 50, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Svobodny Prospect 79, Krasnoyarsk 660041, Russia.
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk Worker 31, Krasnoyarsk 660014, Russia.

Доп.точки доступа:
Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Tarasov, A. S.; Тарасов, Антон Сергеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Myagkov, V. G.; Мягков, Виктор Григорьевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Zhigalov, V. S.; Жигалов, Виктор Степанович; Matsynin, A. A.; Мацынин, Алексей Александрович; Tambasova, E. V.; Russian Foundation for Basic Research [16-32-00302 MOJI_a, 15-02-00948-A, 16-03-00069-A]; Council for Grants of the President of the Russian Federation [SP-317.2015.1]; Program of Foundation for Promotion of Small Enterprises in Science and Technology ("UMNIK" Program) [6662GammaY2015, 9607GammaY/2015]
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Val'kov, V. V.
Renormalization of triplet populations of a spin dimer in zero magnetic field with quantum transport / V. V. Val'kov, S. V. Aksenov // Low Temp. Phys. - 2019. - Vol. 45, Is. 2 : 22nd Ural International Winter School on the Physics of Semiconductors (Feb 20-23, 2018, Alapayevsk, RUSSIA). - P. 165-175, DOI 10.1063/1.5086406. - Cited References: 20. - This work was performed with the support of the Program for Fundamental Research of the Presidium of the Russian Academy of Sciences, No. 32, "Nanostructures: physics, chemistry, biology, foundations of technology", the Russian Fund for Basic Research (grants #16-02-00073, #18-32-00443), the Government of Krasnoyarsk Krai, the Krasnoyarsk Regional Fund for Science within the scientific projects: "Connected Majorana fermions in nanomaterials with strong electron correlations and quantum transport of electrons in systems based on them" (No. 17-42-240441) and "Manifestation of Coulomb interactions and the effects of limited geometry in properties of topological regional states of nanostructures from spin-orbital interaction" (No. 18-42-243017). S.A. expresses his gratitude for a grant of the President of the Russian Federation MK-3722.2018.2. . - ISSN 1063-777X. - ISSN 1090-6517

РУБ Physics, Applied
Рубрики:
SINGLE-MOLECULE
Аннотация: Based on the nonequilibrium Keldysh technique in the atomic representation, the effect of inducing a varied population of magnetic states of a spin dimer interacting with electrons transported through a system in a zero magnetic field was studied. In order to find the filling numbers of the quantum states of the system under the strong nonequilibrium condition, a system of kinetic equations was derived and solved by the method of nonequilibrium diagram technique for Hubbard operators. Numerical analysis of these equations made it possible to reveal nonequilibrium renormalizations when accounting for strong spin-fermion correlations.

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Публикация на русском языке Вальков, Валерий Владимирович. Ренормировки заселенностей триплетных состояний спинового димера в нулевом магнитном поле при квантовом транспорте [Текст] / В. В. Вальков, С. В. Аксенов // Физ. низких температур / чл. прогр. ком. В. В. Вальков. - 2019. - Т. 45 Вып. 2. - С. 192-203 : 19 – 24 февраля 2018 г. : гопрограмма и тезисы докладов / чл. прогр. ком. В. В. Вальков

Держатели документа:
Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Fed Res Ctr,Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Aksenov, S. V.; Аксенов, Сергей Владимирович; Вальков, Валерий Владимирович; Program for Fundamental Research of the Presidium of the Russian Academy of Sciences [32]; Russian Fund for Basic Research [16-02-00073, 18-32-00443]; Government of Krasnoyarsk Krai; Krasnoyarsk Regional Fund for Science [17-42-240441, 18-42-243017]; Russian Federation [MK-3722.2018.2]; Ural International Winter School on the Physics of Semiconductors(22nd ; Feb 20-23, 2018 ; Alapayevsk, Russia)
}
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Transport properties and ferromagnetism of Co(x)Mn(1-x)Ssulfides / S. S. Aplesnin [et al.] // J. Exp. Theor. Phys. - 2008. - Vol. 106, Is. 4. - P. 765-772, DOI 10.1134/S1063776108040158. - Cited References: 39 . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
GIANT VOLUME MAGNETOSTRICTION
   COLOSSAL MAGNETORESISTANCE
   MAGNETIC SEMICONDUCTORS
   ELECTRICAL-PROPERTIES
   ROOM-TEMPERATURE
   ALPHA-MNS
   SPINTRONICS
   TRANSITION
   FEXMN1-XS
   FIELDS
Кл.слова (ненормированные):
Coulomb interactions -- Current voltage characteristics -- Electromotive force -- Ferromagnetism -- Magnetic susceptibility -- Magnetization -- Thermoelectricity -- Transport properties -- Charge susceptibility -- External magnetic fields -- Temperature intervals -- Thermoelectromotive force -- Cobalt compounds
Аннотация: We have studied the resistivity and thermoelectromotive force (thermo emf) in a temperature range of T = 80-1000 K, the magnetic susceptibility and magnetization in a temperature range of T= 4.2-300 K at an external magnetic field of up to 70 kOe, and the structural characteristics of CoxMn1 - S-x sulfides (0 <= x <= 0.4). Anomalies in the transport properties of these compounds have been found in the temperature intervals Delta T-1 = 200-270 K and Delta T-2 = 530-670 K and at T-3 similar to T-N. The temperature dependences of the magnetic susceptibility, magnetization, and resistivity, as well as the current-voltage characteristics, exhibit hysteresis. In the domain of magnetic ordering at temperatures below the Neel temperature (TN), the anti ferromagnetic CoxMn1 - xS sulfides possess a spontaneous magnetic moment that is explained using a model of the orbital ordering of electrons in the t(2g) bands. The influence of the cobalt-ion-induced charge ordering on the transport and magnetic properties of sulfides has been studied. The calculated values of the temperatures corresponding to the maxima of charge susceptibility, which are related to a competition between the on-site Coulomb interaction of holes in various subbands and their weak hybridization, agree well with the experimental data.

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Держатели документа:
[Aplesnin, S. S.
Ryabinkina, L. I.
Romanova, O. B.
Velikanov, D. A.
Balaev, A. D.
Balaev, D. A.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Aplesnin, S. S.
Bandurina, O. N.] Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
[Yanushkevich, K. I.
Galyas, A. I.
Demidenko, O. F.] Natl Acad Sci, Joint Inst Solid State & Semicond Phys, Minsk 220072, Byelarus
ИФ СО РАН
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Reshetnev Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation
Joint Institute of Solid State and Semiconductor Physics, National Academy of Sciences of Belarus, Minsk 220072, Belarus

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна; Romanova, O. B.; Романова, Оксана Борисовна; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Balaev, A. D.; Балаев, Александр Дмитриевич; Balaev, D. A.; Балаев, Дмитрий Александрович; Yanushkevich, K. I.; Galyas, A. I.; Demidenko, O. F.; Bandurina, O. N.
}
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The magnetoelastic effect in CoxMn1-xS solid solutions / S. S. Aplesnin [et al.] // Solid State Commun. - 2010. - Vol. 150, Is. 13-14. - P. 564-567, DOI 10.1016/j.ssc.2010.01.009. - Cited References: 13. - This work was supported by the Russian Foundation for Basic Research projects no. 08-02-00364-a, no. 08-02-90031, no. F08037, F08-229, and no. 09-02-00554-a. . - ISSN 0038-1098

РУБ Physics, Condensed Matter
Рубрики:
YVO3 SINGLE-CRYSTAL
   SPIN-STATE
   TRANSITION
   TRANSPORT
   PHYSICS
   LACOO3
Кл.слова (ненормированные):
Semiconductors -- X-ray scattering -- Galvanomagnetic effects -- Thermal expansion -- Semiconductors -- X-ray scattering -- Galvanomagnetic effects -- Thermal expansion -- Semiconductors -- X-ray scattering -- Coefficient of thermal expansion -- Magnetoelastic effects -- Orbital ordering -- Temperature hysteresis -- Temperature range -- Zero magnetic fields -- Crystallization -- Electric resistance -- Magnetic field effects -- Magnetoresistance -- Manganese -- Manganese compounds -- Neon -- Organic polymers -- Scattering -- Semiconductor quantum dots -- Solid solutions -- Solidification -- Thermal stress -- X ray scattering -- Thermal expansion
Аннотация: The magnetization of cation-substituted CoxMn(1-x)S sulfides upon cooling in zero magnetic field and in a field in the temperature range 4-300 K has been measured and the resistance versus magnetic field (up to 10 kOe) dependences have been obtained. Magnetoresistance and temperature hysteresis of magnetization versus prehistory are found at the magnetic field H < 0.1 T and at T < 240 K. The interrelation between the magnetic and elastic subsystems of the CoxMn1-xS solid solutions has been established. A jump in the coefficient of thermal expansion is observed at the Neel temperature. The features of the physical properties are explained by orbital ordering. (C) 2010 Elsevier Ltd. All rights reserved.

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Держатели документа:
[Aplesnin, S. S.
Ryabinkina, L. I.
Romanova, O. B.
Har'kov, A. M.] MF Reshetneva Aircosm Siberian State Univ, Krasnoyarsk 660014, Russia
[Gorev, M. V.
Balaev, A. D.
Eremin, E. V.
Bovina, A. F.] Russian Acad Sci, KSC Siberian Branch, Ctr Shared, Krasnoyarsk 660036, Russia
КНЦ СО РАН
M.F. Reshetneva Aircosmic Siberian State University, Krasnoyarsk, 660014, Russian Federation
Center of shared using KSC Siberian branch, Russian Academy Science, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна; Romanova, O. B.; Романова, Оксана Борисовна; Har'kov, A. M.; Gorev, M. V.; Горев, Михаил Васильевич; Balaev, A. D.; Балаев, Александр Дмитриевич; Eremin, E. V.; Еремин, Евгений Владимирович; Bovina, A. F.; Бовина, Ася Федоровна
}
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Synthesis of ferromagnetic germanides in 40Ge/60Mn films: Magnetic and structural properties / V. G. Myagkov [et al.] // Solid State Phenom. : Selected, peer reviewed papers. - 2014. - Vol. 215: Trends in Magnetism: Nanomagnetism (EASTMAG-2013). - P. 167-172, DOI 10.4028/www.scientific.net/SSP.215.167. - Cited References: 28 . - ISSN 978-30383. - ISSN 1662-9779
Кл.слова (ненормированные):
Diluted semiconductors -- Manganese germanides -- Solid-state reactions -- Spinodal decomposition
Аннотация: Solid-state reactions between Ge and Mn films are systematically examined using X-ray diffraction, photoelectron spectroscopy and magnetic measurements. The films have a nominal atomic ratio Ge:Mn = 40:60 and are investigated at temperatures from 50 to 500 °C. It is established that after annealing at ~120 °C, the ferromagnetic Mn5Ge phase is the first phase to form at the 40Ge/60Mn interface. Increasing the annealing temperature to 500 °C leads to the formation of the ferromagnetic phase with a Curie temperature TC ~ 360 K and magnetization MS ~ 140-200 emu/cc at room temperature. Analysis of X-ray diffraction patterns and the photoelectron spectra suggests that the increased Curie temperature and magnetization are related to the migration of C and O atoms into the Mn5Ge3 lattice and the formation of the Nowotny phase Mn5GeXCxOy. The initiation temperature (~120 °C) of the Mn5Ge3 phase is the same both for solid-state reactions in Ge/Mn films, as well as for phase separation in GexMn1-x diluted semiconductors. We conclude that the synthesis of the Mn5Ge3 phase is the moving force for the spinodal decomposition of the GexMn1-x diluted semiconductors. © (2014) Trans Tech Publications, Switzerland.

Доп.точки доступа:
Ovchinnikov, S. G. \ed.\; Овчинников, Сергей Геннадьевич; Samardak, A. \ed.\; Myagkov, V. G.; Мягков, Виктор Григорьевич; Matsunin, A. A.; Мацынин, Алексей Александрович; Mikhlin, Y. L.; Михлин, Юрий Леонидович; Zhigalov, V. S.; Жигалов, Виктор Степанович; Bykova, L. E.; Быкова, Людмила Евгеньевна; Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Bondarenko, G. N.; Бондаренко, Галина Николаевна; Patrin, G. S.; Патрин, Геннадий Семёнович; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism(5 ; 2013 ; sept. ; 15-21 ; Vladivostok)
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Synthesis and magnetic and electrical study of TmxMn1–xS solid solutions / O. B. Romanova [et al.] // Bull. Russ. Acad. Sci. Phys. - 2016. - Vol. 80, Is. 6. - P. 679-681, DOI 10.3103/S1062873816060265. - Cited References: 12 . - ISSN 1062-8738
Кл.слова (ненормированные):
Activation energy -- Magnetism -- Temperature distribution -- Antiferromagnetic semiconductors -- Electrical studies -- FCC lattice -- Magnetic transitions -- NaCl type -- Temperature dependence of resistivities -- Manganese
Аннотация: New antiferromagnetic semiconductor compounds TmxMn1–xS (0 ≤ x ≤ 0.15) with an NaCl-type FCC lattice are synthesized, and their structural, magnetic, and electrical properties are investigated at temperatures of 80–1100 K in magnetic fields of up to 10 kOe. Anomalies in the temperature dependence of resistivity in the region of magnetic transition are observed. The activation energy of the synthesized compounds is found and shown to grow along with the concentration of a substitute.

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Публикация на русском языке Синтез, магнитные и электрические исследования твердых растворов TmxMn1-xS [Текст] / О. Б. Романова [и др.] // Изв. РАН. Сер. физ. - 2016. - Т. 80 № 6. - С. 748

Держатели документа:
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, Russian Federation
Siberian State Aerospace University, Krasnoyarsk, Russian Federation
Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus, Minsk, Belarus
Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russian Federation

Доп.точки доступа:
Romanova, O. B.; Романова, Оксана Борисовна; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Yanushkevich, K. I.; Sokolov, V. V.; Соколов В.В.
}
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    Study of the Photovoltage in Mn/SiO2/n-Si MOS Structure at Cryogenic Temperatures / I. A. Bondarev [et al.] // Semiconductors. - 2019. - Vol. 53, Is. 14. - P. 88-92, DOI 10.1134/S1063782619140045. - Cited References: 27. - The work was supported by the Russian Foundation for Basic Research project no. 17-02-00302. . - ISSN 1063-7826. - ISSN 1090-6479
   Перевод заглавия: Исследование фотонапряжения в МДП структуре Mn/SiO2/n-Si при криогенных температурах
Рубрики:
NANOSTRUCTURE DEVICES
Кл.слова (ненормированные):
lateral photovoltage -- transverse photovoltage -- MOS structures -- low temperature -- space-charge region
Аннотация: Lateral photovoltaic effect in metal/insulator/semiconductor hybrid structures is a significant phenomenon for spintronics, as it establishes the interplay between the optical irradiation, electronic transport and spin-dependent properties of carriers. In present work we investigated photovoltaic phenomena in Mn/SiO2/n-Si MOS structure. The sample was prepared on a single-crystal n-Si (phosphorus-doped) substrate. The SiO2 layer with thickness of 1.5 nm was formed on the substrate surface by a chemical method. Manganese film with thickness of 15nm was deposited by thermal evaporation in ultrahigh vacuum in the “Angara” chamber. It was observed that at T < 45 K the values of lateral and transversal photovoltage nonmonotonically depend on the temperature and such dependences show complex behavior. Features of the photovoltage dependence on temperature, in the region above 20 K are explained by the change of carriers’ mobility and the competition between carriers’ drift velocity in the electric field of the space-charge region and their diffusion rate in the transverse and lateral directions. Below 20 K, the main contribution into the photovoltage is given by hot electrons injected from surface states levels to the conduction band. A strong magnetic field influence on the photovoltage below 20 K was observed. We associate it with the Lorenz force effect on the hot electrons, although we also don’t exclude the presence of mechanisms caused by spindependent scattering and recombination of hot electrons at occupied donor states.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036 Russia
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041 Russia

Доп.точки доступа:
Bondarev, I. A.; Бондарев, Илья Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Tarasov, A. S.; Тарасов, Антон Сергеевич; Volkov, N. V.; Волков, Никита Валентинович
}
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    Structure and Magnetic Properties of the FeCo–C Films Reduced by Carbohydrates / E. A. Denisova, L. A. Chekanova, S. V. Komogortsev [et al.] // Semiconductors. - 2020. - Vol. 54, Is. 14. - P. 1840-1842, DOI 10.1134/S1063782620140079. - Cited References: 9. - This work was supported by the Russian Foundation for Basic Research, the Government of the Krasnoyarsk Territory, the Krasnoyarsk Regional Fund for the Support of Scientific and Technical Activities (project no. 18-42-240006 Nanomaterials with magnetic properties determined by the topological features of the nanostructure) . - ISSN 1063-7826. - ISSN 1090-6479
   Перевод заглавия: Структура и магнитные свойства пленок FeCo–C, восстановленных углеводами
Кл.слова (ненормированные):
FeCo–C alloy -- electroless deposition -- magnetic properties
Аннотация: The structural and magnetic properties of FeCo–C films produced by electroless plating with differentcarbohydrates as reducing agents have been investigated. The surface morphology and coercivities of FeCo–C films are dependent on the iron content and type of reducing agent. The local magnetic anisotropy field value increases with a decrease in Fe content. For all systems, deposits with good soft magnetic properties were obtained, with coercivities less than 12 Oe and saturation magnetizations close to 240 emu/g for FeCo–C film with 30% cobalt. The best soft magnetic properties corresponded to the deposits with bcc structure and grain sizes less than 20 nm.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center “Krasnoyarsk Science Center of the Siberian Branch of the Russian Academy of Sciences”, Krasnoyarsk, Russia
Siberian Federal University, Krasnoyarsk, 660041 Russia
Federal Research Center “Krasnoyarsk Science Center of the Siberian Branch of the Russian Academy of Sciences”, Krasnoyarsk, Russia

Доп.точки доступа:
Denisova, E. A.; Денисова, Елена Александровна; Chekanova, L. A.; Чеканова, Лидия Александровна; Komogortsev, S. V.; Комогорцев, Сергей Викторович; Nemtsev, I. V.; Iskhakov, R. S.; Исхаков, Рауф Садыкович
}
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10.

Structure and Electrical Properties of (ZnO/SiO2)25 Thin Films / M. N. Volochaev [et al.] // Semiconductors. - 2019. - Vol. 53, Is. 11. - P. 1465-1471, DOI 10.1134/S106378261911023X. - Cited References: 16. - This study was carried out in the framework of the state assignment of the Ministry of Science and Higher Education of the Russian Federation, project no. 3.1867.2017/4.6. . - ISSN 1063-7826. - ISSN 1090-6479

РУБ Physics, Condensed Matter
Рубрики:
HETEROSTRUCTURES
Кл.слова (ненормированные):
thin films -- multilayers -- oxide semiconductors -- hopping conductivity -- thermal stability
Аннотация: (ZnO/SiO2)25 thin-film multilayers consisting of nanocrystalline ZnO layers and amorphous SiO2 spacers with a bilayer thickness from 6 to 10 nm are synthesized in a single deposition process. An analysis of the temperature dependences of the electrical resistivity of (ZnO/SiO2)25 thin films shows that, in the temperature range of 77–300 K, the dominant conductivity mechanism successively changes from hopping conductivity with a variable hopping length in a narrow energy band near the Fermi level at temperatures of 77–250 K to thermally activated impurity conductivity around room temperature. Using the obtained temperature dependences of the electrical resistivity, the effective density of localized states at the Fermi level and the activation energy of impurity levels are estimated. The effect of heat treatment on the structure and electrical properties of the synthesized films is examined. It is established that in (ZnO/SiO2)25 thin-film systems at temperatures of 580–600°C, the ZnO and SiO2 layers chemically interact, which is accompanied by destruction of the multilayer structure and formation of the Zn2SiO4 compound with a tetragonal structure (sp. gr. I-42d).

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Публикация на русском языке

Держатели документа:
Russian Acad Sci, Krasnoyarsk Sci Ctr, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk, Russia.
Voronezh State Tech Univ, Voronezh 394026, Russia.

Доп.точки доступа:
Volochaev, M. N.; Волочаев, Михаил Николаевич; Kalinin, Yu E.; Kashirin, M. A.; Makagonov, V. A.; Pankov, S. Yu; Bassarab, V. V.; Ministry of Science and Higher Education of the Russian Federation [3.1867.2017/4.6]
}
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11.

    Structural, electrical and magnetic study of manganites Pr0.6Sr0.4MnO3 thin films / D. S. Neznakhin [et al.] // J. Phys. Conf. Ser. - 2016. - Vol. 690, Is. 1, DOI 10.1088/1742-6596/690/1/012002. - Cited References: 20. - The work was supported partly by RFBR, grant №14-02-01211, Grant of President of Russian Federation №NSh-2886.2014.2, and by The Ministry of Education and Science of the Russian Federation, project №2582. . - ISSN 1742-6588
   Перевод заглавия: Структурные, электрические и магнитные исследования тонких пленок манганита Pr0.6Sr0.4MnO3
Кл.слова (ненормированные):
Magnetic materials -- Magnetization -- Manganese oxide -- Nanoelectronics -- Nanostructures -- Oxide films -- Field dependence -- Magnetization temperature curves -- Polycrystalline phase -- Polycrystalline pr -- Resistivity dependence -- Shape characteristics -- Structural parameter -- Zero-field cooling -- Thin films
Аннотация: Thin polycrystalline Pr0.6Sr0.4MnO3 films were grown on the Y stabilized zirconium oxide substrates by magnetron sputtering using RF power and off-axis sputtering scheme with double cathodes. Only one polycrystalline phase with structural parameters consistent with that for the corresponding bulk sample was revealed in the films. Electric resistivity dependence on temperature demonstrates the shape characteristic for the substances with the Mott transition. The difference between magnetization temperature curves measured in the zero field cooling and field cooling modes was revealed. Magnetization field dependences were presented by the hysteresis loops changing their form with temperature. © Published under licence by IOP Publishing Ltd.

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Доп.точки доступа:
Neznakhin, D. S.; Samoshkina, Yu. E.; Самошкина, Юлия Эрнестовна; Molokeev, M. S.; Молокеев, Максим Сергеевич; Semenov, S. V.; Семёнов, Сергей Васильевич; Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics(St. Petersburg)(17 ; 23 - 27 Nov. 2015)
}
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12.

Structural and optical properties of thin In2O3 films produced by autowave oxidation / I. A. Tambasov [et al.] // Semiconductors. - 2013. - Vol. 47, Is. 4. - P. 569-573DOI 10.1134/S1063782613040210
Аннотация: Cubic-phase In2O3 films are produced by the autowave oxidation reaction. Electron microscopy and photoelectron spectroscopy of the atomic profiles show that the samples are homogeneous over the entire area and throughout the thickness, with the typical grain size being 20–40 nm. The optical and electrical properties are studied for In2O3 films fabricated at different pressures in the vacuum chamber. In the wave-length range from 400 to 1100 nm, the transparency of the films was higher than 85%; the resistivity of the films was 1.8 × 10–2Ω cm.

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Публикация на русском языке Структурные и оптические свойства тонких пленок In2O3, полученных автоволновым окислением // Физика и техника полупроводников. - 2013. - Т. 47, Вып. 4. - С. 546-550

Держатели документа:
Russian Acad Sci, Kirenskii Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia
Russian Acad Sci, Inst Chem & Chem Technol, Siberian Branch, Krasnoyarsk 660049, Russia
Joint Stock Co Academician MF Reshetnev Informat, Zheleznogorsk 662972, Russia

Доп.точки доступа:
Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Myagkov, V. G.; Ivanenko, A. A.; Иваненко, Александр Анатольевич; Nemtsev, I. V.; Немцев, Иван Васильевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Bondarenko, G. N.; Бондаренко, Галина Николаевна; Mihlin, J. L.; Михлин, Юрий Леонидович; Maksimov, I. A.; Максимов И. А.; Ivanov, V. V.; Иванов В. В.; Balashov, S. V.; Балашов С. В.; Karpenko, D. S.; Карпенко Д. С.
}
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13.

Spin fluctuation effect on the absorption-spectrum of magnetic semiconductors / M. S. ERUKHIMOV [и др.] // Fiz. Tverd. Tela. - 1985. - Vol. 27, Is. 12. - P. 3628-3634. - Cited References: 16 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

WOS
Доп.точки доступа:
ERUKHIMOV, M. S.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Gavrichkov, V. A.; Гавричков, Владимир Александрович; PONOMAREV, V. I.
}
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14.

Solid-state reactions in Ga/Mn thin films: Formation and magnetic properties of the I center dot-Ga7.7Mn2.3 phase / V. G. Myagkov [et al.] // JETP Letters. - 2010. - Vol. 92, Is. 10. - P. 687-691, DOI 10.1134/S0021364010220108. - Cited References: 32. - This work was supported by the Ministry of Education and Science of the Russian Federation, project no. 2.1.1/4399, the program "Development of the Research Potential of Higher Education in 2009-2010." . - ISSN 0021-3640

РУБ Physics, Multidisciplinary
Рубрики:
PERPENDICULAR ANISOTROPY
   EPITAXIAL-GROWTH
   GA
   SEMICONDUCTORS
   SPINTRONICS
   CRYSTAL
   ALLOYS
Аннотация: Experimental results concerning the solid-state synthesis of the I center dot-Ga7.7Mn2.3 phase in Ga/Mn thin films are presented. A ferromagnetic (or ferrimagnetic) state is observed in the samples annealed at temperatures above 250A degrees C. The X-ray diffraction studies demonstrate the formation of the I center dot-Ga7.7Mn2.3 phase, which is poly-crystalline being grown on glass substrates and exhibits the preferential cube-on-cube orientation on MgO(001) substrates. A strong dependence of the perpendicular anisotropy constant K (aSyen) and of the effective biaxial anisotropy constant K (1) (eff) on the magnetic field H has been found. Owing to such dependence, the easy axis of magnetization lying in the plane of the film changes its direction approaching the film normal when the increasing magnetic field exceeds 8 kOe. The anomalous behavior of K (aSyen) and K (1) (eff) constants is explained both by the in-plane stresses arising in the course of the formation of the I center dot-Ga7.7Mn2.3 phase and by the direct dependence of magnetostriction constants on the magnetic field. For the I center dot-Ga7.7Mn2.3 phase, the saturation magnetization M (S) has been determined and the first magnetocrystalline anisotropy constant K (1) has been estimated.

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Держатели документа:
[Myagkov, V. G.
Zhigalov, V. S.
Bykova, L. E.
Patrin, G. S.
Velikanov, D. A.] Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Krasnoyarsk 660036, Russia
[Myagkov, V. G.
Zhigalov, V. S.
Solov'ev, L. A.] Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
[Solov'ev, L. A.] Russian Acad Sci, Siberian Branch, Inst Chem & Chem Technol, Krasnoyarsk 660049, Russia
[Patrin, G. S.
Velikanov, D. A.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
ИХХТ СО РАН
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk 660036, Russian Federation
Reshetnev Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation
Institute of Chemistry and Chemical Technology, Siberian Branch, Russian Academy of Sciences, ul. Karla Marksa 43, Krasnoyarsk 660049, Russian Federation
Siberian Federal University, Svobodnyi pr. 79, Krasnoyarsk 660041, Russian Federation

Доп.точки доступа:
Myagkov, V. G.; Мягков, Виктор Григорьевич; Zhigalov, V. S.; Жигалов, Виктор Степанович; Bykova, L. E.; Быкова, Людмила Евгеньевна; Solov'ev, L. A.; Соловьев, Леонид Александрович; Patrin, G. S.; Патрин, Геннадий Семёнович; Velikanov, D. A.; Великанов, Дмитрий Анатольевич
}
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15.

Solid state synthesis and characterization of ferromagnetic nanocomposite Fe-In2O3 thin films / V. G. Myagkov [et al.] // J. Alloys Compd. - 2014. - Vol. 612. - P. 189-194, DOI 10.1016/j.jallcom.2014.05.176. - Cited References: 56 . - ISSN 0925-8388. - ISSN 1873-4669

РУБ Chemistry, Physical + Materials Science, Multidisciplinary + Metallurgy & Metallurgical Engineering
Рубрики:
HIGH-TEMPERATURE FERROMAGNETISM
   PHASE-FORMATION
   In2O
   OXIDE
   NANOPARTICLES
   CO
   SEMICONDUCTORS
   NANOCRYSTALS
   COMBUSTION
   SYSTEMS
Кл.слова (ненормированные):
Thermite reactions -- Reactive films -- Ferromagnetic nanocomposite films -- Transparent conducting oxides
Аннотация: We have successfully synthesized ferromagnetic Fe-In2O 3 nanocomposite thin films for the first time using the thermite reaction Fe2O3 + In = In2O3 + Fe. The initial In/Fe2O3 bilayers were obtained by the deposition of In layers on α-Fe2O3 films. The reaction occurs in a self-propagating mode in a homogeneous thermal film plane field at heating rates above 20 K/s and at temperatures above initiation temperature T[[d]]in[[/d]] ~ 180 °C. At heating rates lower than 20 K/s the mixing of the In and Fe2O3 layers occurs across the whole In/Fe2O3 interface and the synthesis of the ferromagnetic α-Fe phase starts above the initiation temperature T[[d]]in[[/d]] = 180 °C. X-ray diffraction, X-ray photoelectron spectroscopy, Mossbauer spectroscopy, transmission electron microscopy and magnetic measurements were used for phase identification and microstructure observation of the synthesized Fe-In2O3 samples. The reaction products contain (1 1 0) textured α-Fe nanocrystals with a diameter around 100 nm and surrounded by an In2O3 matrix. These results enable new efficient low-temperature methods for synthesizing ferromagnetic nanocomposite films containing ferromagnetic nanoclusters embedded in transparent conducting oxides. © 2014 Elsevier B.V. All rights reserved.

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Держатели документа:
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Krasnoyarsk 660036, Russia
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
Russian Acad Sci, Siberian Branch, Inst Chem & Chem Technol, Krasnoyarsk 660049, Russia

Доп.точки доступа:
Myagkov, V. G.; Мягков, Виктор Григорьевич; Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Bayukov, O. A.; Баюков, Олег Артемьевич; Zhigalov, V. S.; Жигалов, Виктор Степанович; Bykova, L. E.; Быкова, Людмила Евгеньевна; Mikhlin, Yu. L.; Volochaev, M. N.; Bondarenko, G. N.; Бондаренко, Галина Николаевна
}
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16.

    Single-crystal and powder neutron diffraction study of the FeXMn1−XS solid solutions / G. Abramova [et al.] // J. Alloys Compd. - 2015. - Vol. 632. - P. 563-567, DOI 10.1016/j.jallcom.2015.01.162DOI 10.1002/chin.201522001. - Cited References:23. - This study was supported in part by the INTAS project no. 06-1000013-9002 and the CRDF-SB RAS project no. RUP1-7054-KR-11, N 16854.
Ref.: ChemInform abstract, 2015, Vol. 46, Is. 22. - Wiley online library
. - ISSN 0925. - ISSN 1873-4669
   Перевод заглавия: Нейтронографическое исследование порошков и монокристаллов твердых растворов FeXMn1-XS методами монокристальной и порошковой нейтронографии

РУБ Chemistry, Physical + Materials Science, Multidisciplinary + Metallurgy & Metallurgical Engineering
Рубрики:
PHASE-TRANSITIONS
   ALPHA-MNS
   MAGNETIC STRUCTURES
   HIGH-PRESSURE
   FEO
Кл.слова (ненормированные):
Magnetic semiconductors -- Neutron diffraction
Аннотация: The α-MnS-based FeXMn1−XS (0 < x < 0.3) solid solutions are synthesized and shown to be new Mott materials with the rock salt structure. Neutron diffraction data show that the chemical-pressure-induced Neel temperature shift from 150 (x = 0) to 200 K (x = 0.29) observed in these materials is accompanied by a decrease in the NaCl-type cubic lattice parameters. It is established that at the symmetry transformation in the compositions with x = 0.25 and 0.29 the structural transition occurs, which is followed by the magnetic transition. These features make the FeXMn1−XS solid solutions interesting for both fundamental study of the interrelation between the magnetic, electrical, and structural properties in MnO-type strongly correlated electron systems and application.

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Abstract

Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia.
Paul Scherrer Inst, LNS, CH-5232 Villigen, Switzerland.
Inst Max von Laue Paul Langevin, Grenoble 9, France.
Russian Acad Sci, Nikolaev Inst Inorgan Chem, Siberian Branch, Novosibirsk 630090, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Abramova, G. M.; Абрамова, Галина Михайловна; Schefer, Juerg; Aliouane, N.; Boehm, M.; Petrakovskiy, G. A.; Петраковский, Герман Антонович; Vorotynov, A. M.; Воротынов, Александр Михайлович; Gorev, M. V.; Горев, Михаил Васильевич; Bovina, A. F.; Бовина, Ася Федоровна; Sokolov, V. V.; Соколов В. В.
}
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17.

    Single crystals of EuScCuSe3: Synthesis, experimental and DFT investigations / M. V. Grigoriev, A. V. Ruseikina, V. A. Chernyshev [et al.] // Materials. - 2023. - Vol. 16, Is. 4. - Ст. 1555, DOI 10.3390/ma16041555. - Cited References: 39. - This research was funded by the Tyumen Oblast Government as part of the West-Siberian Interregional Science and Education Center’s project No. 89-DON (3). The work was supported by The Ministry of Science and Higher Education of the Russian Federation, project, No. FEUZ-2023-0017 . - ISSN 1996-1944
   Перевод заглавия: Монокристаллы EuScCuSe3: синтез, экспериментальные и DFT-исследования
Кл.слова (ненормированные):
quaternary chalcogenides -- crystal structure -- DFT calculations -- semiconductors -- vibrational spectroscopy
Аннотация: EuScCuSe3 was synthesized from the elements for the first time by the method of cesium-iodide flux. The crystal belongs to the orthorhombic system (Cmcm) with the unit cell parameters a = 3.9883(3) Å, b = 13.2776(9) Å, c = 10.1728(7) Å, V = 538.70(7) Å3. Density functional (DFT) methods were used to study the crystal structure stability of EuScCuSe3 in the experimentally obtained Cmcm and the previously proposed Pnma space groups. It was shown that analysis of elastic properties as Raman and infrared spectroscopy are powerless for this particular task. The instability of EuScCuSe3 in space group Pnma space group is shown on the basis of phonon dispersion curve simulation. The EuScCuSe3 can be assigned to indirect wide-band gap semiconductors. It exhibits the properties of a soft ferromagnet at temperatures below 2 K.

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Держатели документа:
Laboratory of Theory and Optimization of Chemical and Technological Processes, University of Tyumen, Tyumen 625003, Russia
Institute of Inorganic Chemistry, University of Stuttgart, D-70569 Stuttgart, Germany
Institute of Natural Sciences and Mathematics, Ural Federal University named after the First President of Russia B.N. Yeltsin, Mira Str. 19, Ekaterinburg 620002, Russia
Laboratory of Molecular Spectroscopy, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk 660036, Russia
School of Engineering and Construction, Siberian Federal University, Krasnoyarsk 660041, Russia
Institute of Physics and Technology, University of Tyumen, Tyumen 625003, Russia
Institute of Engineering Physics and Radioelectronic of Siberian State University, Krasnoyarsk 660041, Russia
Laboratory of Crystal Physics, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk 660036, Russia
Department of Physics, Far Eastern State Transport University, Khabarovsk 680021, Russia

Доп.точки доступа:
Grigoriev, Maxim V.; Ruseikina, Anna V.; Chernyshev, Vladimir A.; Oreshonkov, A. S.; Орешонков, Александр Сергеевич; Garmonov, Alexander A.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Locke, Ralf J. C.; Elyshev, Andrey V.; Schleid, Thomas
}
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18.

Selective excitation of E-1(LO) and A(1)(LO) phonons with large wave vectors in the Raman spectra of hexagonal InN / V. Y. Davydov [et al.] // Phys. Rev. B. - 2009. - Vol. 80, Is. 8. - Ст. 81204, DOI 10.1103/PhysRevB.80.081204. - Cited References: 15. - We are thankful to B. N. Mavrin and A. N. Vtyurin for the arrangement NIR measurements and S. A. Permogorov for the critical reading of the manuscript. This work was supported by RFBR (Grant No. 09-02-01280), NSC-RFBR (Grant No. 08-02-92003-HHC), and the Program of RAS "New materials and structures." . - ISSN 1098-0121

РУБ Physics, Condensed Matter
Рубрики:
SCATTERING
RESONANCE
Кл.слова (ненормированные):
III-V semiconductors -- indium compounds -- phonon dispersion relations -- Raman spectra -- wide band gap semiconductors
Аннотация: It is shown that dispersions of E-1(LO) and A(1)(LO) modes of InN can be restored in a wide interval of wave vectors by studying impurity-induced first-order Raman scattering as a function of exciting light energy. It is also shown that due to the resonance character of scattering the observed phonon energies correspond to the wave vectors strictly defined by exciting photon energies. The frequencies of E-1(LO) and A(1)(LO) phonons at the Gamma point obtained by extrapolation to zero wave vectors were found to be 604 and 592 cm(-1), respectively.

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Держатели документа:
[Davydov, V. Yu.
Klochikhin, A. A.
Smirnov, A. N.
Strashkova, I. Yu.] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[Klochikhin, A. A.] Inst Nucl Phys, St Petersburg 350000, Russia
[Krylov, A. S.] LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
[Lu, Hai
Schaff, William J.] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA
[Lee, H. -M.
Hong, Y. -L.
Gwo, S.] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan
ИФ СО РАН
Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russian Federation
Nuclear Physics Institute, 350000 St. Petersburg, Russian Federation
Kirensky Institute of Physics, 60036 Krasnoyarsk, Russian Federation
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, United States
Department of Physics, National Tsing-Hua University, Hsinchu 30013, Taiwan

Доп.точки доступа:
Davydov, V. Yu.; Klochikhin, A. A.; Smirnov, A. N.; Strashkova, I. Y.; Krylov, A. S.; Крылов, Александр Сергеевич; Lu, H.; Schaff, W. J.; Lee, H. M.; Hong, Y. L.; Gwo, S.; RFBR [09-02-01280]; NSC-RFBR [08-02-92003-HHC]
}
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19.

    Room temperature magneto-transport properties of nanocomposite Fe–In2O3 thin films / I. A. Tambasov [et al.] // Physica B. - 2015. - Vol. 478. - P. 135-137, DOI 10.1016/j.physb.2015.08.054. - Cited References: 28. - This study was supported by the Russian Foundation for Basic Research (Grants # 15-02-00948-A,), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the program of Foundation for Promotion of Small Enterprises in Science and Technology (No 6662 FY2015) ("UMNIK" program). . - ISSN 0921-4526
   Перевод заглавия: Магнитно-транспортные свойства композитных Fe –In2O3 тонких пленок при комнатной температуре

РУБ Physics, Condensed Matter
Рубрики:
Doped In2O3 Films
   High-performance
   Indium oxide
   Transistors
   Magnetoresistance
   Ferromagnetism
Кл.слова (ненормированные):
Indium oxide -- Fe-In2O3 thin films -- Weak localization -- Disordered semiconductors
Аннотация: A ferromagnetic Fe–In2O3 nanocomposite thin film has been synthesized by the thermite reaction Fe2O3+In→Fe–In2O3. Measurements of the Hall carrier concentration, Hall mobility and magnetoresistance have been conducted at room temperature. The nanocomposite Fe–In2O3 thin film had n=1.94·1020 cm−3, μ=6.45 cm2/Vs and negative magnetoresistance. The magnetoresistance for 8.8 kOe was ~−0.22%.The negative magnetoresistance was well described by the weak localization and model proposed by Khosla and Fischer.

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Держатели документа:
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Akademgorodok 50, Krasnoyarsk, Russian Federation
Reshetnev Siberian State Aerospace University, Krasnoyarsk Worker 31, Krasnoyarsk, Russian Federation
Siberian Federal University, Svobodny prospect 79, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Gornakov, K. O.; Myagkov, V. G.; Мягков, Виктор Григорьевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Zhigalov, V. S.; Жигалов, Виктор Степанович; Matsynin, A. A.; Мацынин, Алексей Александрович; Yozhikova, E. V.
}
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20.

Romanova, O. B.
Effect of electron and hole doping on the transport characteristics of chalcogenide systems / O. B. Romanova, S. S. Aplesnin, L. V. Udod // Phys. Solid State. - 2021. - Vol. 63, Is. 5. - P. 754-757, DOI 10.1134/S1063783421050152. - Cited References: 21. - This study was supported by the Russian Foundation for Basic Research and the Belarusian Republican Foundation for Basic Research, project no. 20-52-00005 . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter
Рубрики:
MAGNETIC-PROPERTIES
TRANSITION
Кл.слова (ненормированные):
semiconductors -- conductivity -- Hall constant -- mobility
Аннотация: The electrical properties of the Ag0.01Mn0.99S and Tm0.01Mn0.99S semiconductor compounds and the Hall effect in them have been investigated in the temperature range of 80-400 K in a magnetic field of 12 kOe. Using the I-V characteristics, the conductivity mechanism depending on the doping type and concentration has been established. Upon substitution of silver for manganese, the Mott-type conductivity has been found, while substitution of thulium causes the ohmic conductivity. The mobility and type of carriers have been determined from the Hall constant data.

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Публикация на русском языке Романова, Оксана Борисовна. Влияние электронного и дырочного допирования на транспортные характеристики халькогенидных систем [Текст] / О. Б. Романова, С. С. Аплеснин, Л. В. Удод // Физ. тверд. тела. - 2021. - Т. 63 Вып. 5. - С. 606-609

Держатели документа:
Russian Acad Sci, Krasnoyarsk Sci Ctr, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia.
Siberian State Univ Sci & Technol, Krasnoyarsk 660014, Russia.

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Udod, L. V.; Удод, Любовь Викторовна; Романова, Оксана Борисовна; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR); Belarusian Republican Foundation for Basic Research [20-52-00005]
}
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