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    Эллипсометрический контроль параметров многослойных наноструктур Fe/Si в процессе роста / И. А. Тарасов [и др.] // Космич. аппараты и технол. - 2018. - Т. 2, № 4. - С. 220-224, DOI 10.26732/2618-7957-2018-4-220-224. - Библиогр.: 10. - Работа выполнена при финансовой поддержке программ Президиума РАН № 32, проект 0356-2018-0061, Министерства образования и науки Российской Федерации и Сибирского отделения Российской академии наук, проект II.8.70. . - ISSN 2618-7957
   Перевод заглавия: Ellipsometric control of parameters of multilayer Fe/Si nanostructures during growth
Кл.слова (ненормированные):
эллипсометрия -- силициды железа -- многослойные Fe/Si наноструктуры -- ellipsometry -- iron silicides -- multilayer Fe/Si nanostructures
Аннотация: С использованием метода одноволновой лазерной эллипсометрии in situ проведено исследование процесса формирования многослойной структуры [Si/Fe57/Fe56]3/SiO2/Si(100). Были получены сведения об оптических и структурных свойствах данной структуры. Изменение морфологии поверхности растущих слоев и их оптических характеристик оказываются неидентичными для случаев осаждения железа на поверхность слоя кремния и осаждения кремния на поверхность слоя железа. Полученные профили оптических постоянных свидетельствуют об увеличении толщины переходных слоев, содержащих твердые растворы «железо-кремний» и силициды. Характер изменения оптических постоянных усложняется с каждым последующим слоем железа, осаждаемым на поверхность кремния. Поведение профилей n и k, соответствующих формированию кремниевых слоев, имеет более простой характер по сравнению с поведением подобных профилей железа. Эти профили имеют лишь некоторые особенности на начальных этапах роста и соответствуют формированию аморфных слоев кремния. Полученные данные согласуются с данными просвечивающей электронной микроскопии.
Using in situ single-wave laser ellipsometry method, the formation of the [Si/Fe57/Fe56]3/SiO2/Si(100) multilayer structure was studied. Information about the optical and structural properties of this structure was obtained. The change in the morphology of the surface of the growing layers and their optical characteristics are not identical for the cases of iron deposition on the surface of the silicon layer and deposition of silicon on the surface of the iron layer. The refractive index and coefficient of absorption indicate an increase of the thickness of transition layers containing iron-silicon solid solutions and silicides. The nature of the change in the optical constants become more complicated with each subsequent iron layer deposited on the silicon surface. The behavior of n and k profiles corresponding to the formation of silicon layers is simpler than the behavior of similar iron profiles. These profiles have only some features at the initial stages of growth and correspond to the formation of amorphous silicon layers. The obtained data are consistent with the data of transmission electron microscopy.

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Держатели документа:
Институт физики им. Л. В. Киренского СО РАН, ФИЦ КНЦ СО РАН
Сибирский федеральный университет

Доп.точки доступа:
Тарасов, Иван Анатольевич; Tarasov, I. A.; Яковлев, Иван Александрович; Yakovlev, I. A.; Варнаков, Сергей Николаевич; Varnakov, S. N.; Жарков, Сергей Михайлович; Zharkov, S. M.; Овчинников, Сергей Геннадьевич; Ovchinnikov, S. G.
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    Исследование силицида FeSi методами электронной спектроскопии / А. Ю. Игуменов [и др.] // Решетневские чтения : материалы XIX Междунар. науч. конф. : в 2-х ч. - 2015. - Ч. 1. - С. 525-527. - Библиогр.: 7 . - ISSN 1990-7702
   Перевод заглавия: Silicide FeSi investigation with the electron spectroscopy methods
Кл.слова (ненормированные):
силициды железа -- спектроскопия сечения неупругого рассеяния электронов -- спектроскопия характеристических потерь энергии электронов -- iron silicides -- inelastic electron scattering cross-section -- electron energy loss spectroscopy
Аннотация: Для создания наногетероструктур на основе железа и кремния необходим строгий контроль элементного состава и фазообразования, в том числе силицидообразования. Моносилицид железа – перспективный материал для создания источников и детекторов света в ближней инфракрасной области, которые могут быть использованы в ракетно-космической отрасли. В данной работе проведено исследование силицида FeSi методами рентгеновской фотоэлектронной спектроскопии, спектроскопии характеристических потерь энергии отраженных электронов и сечения неупругого рассеяния электронов. Проведено исследование тонкой структуры спектров сечения неупругого рассеяния электронов посредством аппроксимации этих спектров Лоренцевоподобными пиками Тоугаарда.
The creation of iron-silicon based nanoheterostructures requires precise control of the elemental composition and phase formation, including silicide formation. Iron monosilicide is a promising material to create light sources or detectors in the near infrared region, which can be used in the space industry. In this work, the silicide FeSi investigation with X-ray photoelectron spectroscopy, electron energy loss spectroscopy and inelastic electron scattering cross-section is carried out. The inelastic electron scattering cross-section spectra fine structure investigation approximating of these spectra with the Lorentzian-type Tougaard peaks is performed.

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Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Игуменов, А. Ю.; Igumenov A. Y.; Паршин, Анатолий Сергеевич; Parshin A. S.; Михлин, Юрий Леонидович; Mikhlin Yu. L.; Пчеляков, О. П.; Pchelyakov O. P.; Жигалов, Виктор Степанович; Zhigalov, V. S.; Кущенков, С. А.; Kuschenkov S. A.; "Решетневские чтения", международная научно-практическая конференция(19 ; 2015 ; нояб. ; 10-14 ; Красноярск)
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Thermoelectric properties and cost optimization of spark plasma sintered n-type Si0.9Ge0.1 - Mg2Si nanocomposites / A. Usenko [et al.] // Scripta Mater. - 2018. - Vol. 146. - P. 295-299, DOI 10.1016/j.scriptamat.2017.12.019. - Cited References: 28. - This work was supported by Russian Science Foundation (project No. 16-13-00060). Part of the work (structural characterization of the samples) was carried out with financial support of the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST “MISiS”. Partial support by Act 211 Government of the Russian Federation, contract # 02.A03.21.0011, is also acknowledged. . - ISSN 1359-6462
Кл.слова (ненормированные):
Cost optimization -- Lattice thermal conductivity -- Magnesium silicides -- Spark plasma -- Thermo-Electric materials -- Thermoelectric figure of merit -- Thermoelectric performance -- Thermoelectric properties
Аннотация: We report on thermoelectric properties of low Ge content n-type Si0.9Ge0.1–Mg2Si nanocomposite. Introduction of the Mg2Si phase into a SiGe matrix resulted in a dramatic drop of the lattice thermal conductivity beyond the previously reported lowest limit for SiGe alloys due to intensification of phonon scattering on SiGe–Mg2Si grain boundaries. For a sample doped with 1 at.% of Mg2Si, the peak value of thermoelectric figure of merit ZT reached ~ 0.8 at 800 °C. Sintered nanocomposites still exhibit high thermoelectric performance while being almost two times cheaper than Si0.8Ge0.2.

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Держатели документа:
National University of Science and Technology “MISiS”, Moscow, Russian Federation
Siberian Federal University, Krasnoyarsk, Russian Federation
Kirensky Institute of Physics, Krasnoyarsk, Russian Federation
National Research South Ural State University, Chelyabinsk, Russian Federation

Доп.точки доступа:
Usenko, A.; Moskovskikh, D.; Korotitskiy, A.; Gorshenkov, M.; Zakharova, E.; Fedorov, A. S.; Федоров, Александр Семенович; Parkhomenko, Y.; Khovaylo, V.
}
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The temperature dependences of optical and magneto-optical properties of iron silicides / S. A. Lyashchenko [et al.] // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. P6.11. - P. 319. - References: 3. - The work was supported by The Complex program of SB RAS № II.2P, project 0358-2015-0004 . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
ellipsometry -- magneto-optic effects -- Fe-Si system

Доп.точки доступа:
Lyashchenko, S. A.; Лященко, Сергей Александрович; Yakovlev, I. A.; Яковлев, Иван Александрович; Maximova, O. A.; Максимова, Ольга Александровна; Shevtsov, D. V.; Шевцов, Дмитрий Валентинович; Zabluda, V. N.; Заблуда, Владимир Николаевич; Popov, Z. I.; Попов, Захар Иванович; Molokeev, M. S.; Молокеев, Максим Сергеевич; Kuzubov, A. A.; Кузубов, Александр Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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The microscopic origin of ferromagnetism in Fe silicides : Invited / I. S. Sandalov [et al.] // Int. workshop on actual probl. of cond. matt. phys. : Program. Book of abstracts / Fed. Res. Center KSC SB RAS, Kirensky Inst. of phys., Sib. Fed. Univ. - Krasnoyarsk, 2017. - P. 16

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Доп.точки доступа:
Ovchinnikov, S. G. \предс. прогр. ком.\; Овчинников, Сергей Геннадьевич; Sandalov, I. S.; Zamkova, N. G.; Замкова, Наталья Геннадьевна; Zhandun, V. S.; Жандун, Вячеслав Сергеевич; Ovchinnikov, S. G.; Federal Research Center KSC SB RAS; Kirensky Institute of Physics; Siberian Federal Univercity; International Workshop on Actual Problems of Condensed Matter Physics(27 Mar. - 1 Apr. 2017 ; Krasnoyarsk / Cheremushki)
}
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Zamkova, N. G.
The changing of magnetic and electronic structure of iron silicides Fe3Si and α-FeSi2with different substitution / N. G. Zamkova, V. S. Zhandun, I. S. Sandalov // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. P3.11. - P. 193. - References: 1 . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
Iron silicides -- magnetic and electronic structure -- ab initio calculation

Доп.точки доступа:
Zhandun, V. S.; Жандун, Вячеслав Сергеевич; Sandalov, I. S.; Сандалов, Игорь Семёнович; Замкова, Наталья Геннадьевна; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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Tailoring the preferable orientation relationship and shape of α-FeSi2nanocrystals on Si(001): The impact of gold and the Si/Fe flux ratio, and the origin of α/Si boundaries / I. A. Tarasov, T. E. Smolyarova, I. V. Nemtsev [et al.] // CrystEngComm. - 2020. - Vol. 22, Is. 23. - P. 3943-3955, DOI 10.1039/d0ce00399a. - Cited References: 52. - The experimental part of the reported study was funded by the Russian Science Foundation, project no. 16-13-00060-Π. Theoretical analysis of the ORs of the α-FeSi2 nanocrystals grown was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science via research project No. 18-42-243013. We also acknowledge the Krasnoyarsk Regional Center of Research Equipment of Federal Research Center “Krasnoyarsk Science Center SB RAS” for support with carrying out the microscopic investigations. I. A. Tarasov personally thanks M. A. Visotin for continuous fruitful discussion about the energetics of the formation of the α-FeSi2 nanocrystals . - ISSN 1466-8033
Кл.слова (ненормированные):
Gold -- Morphology -- Nanocrystals -- Silicides
Аннотация: The growth of α-FeSi2 nanocrystal ensembles on gold-activated and gold-free Si(001) surfaces at different Si/Fe flux ratios via molecular beam epitaxy is reported. The study reveals that the utilisation of gold as a catalyst regulates the preferable orientation relationship (OR) of the nanocrystals to silicon and their morphology at a given Si/Fe flux ratio. α-FeSi2 free-standing crystals with continuously tuned sizes from 30 nm up to several micrometres can be grown with an α(001)//Si(001) basic OR under gold-assisted conditions and an α(111)//Si(001) OR under gold-free growth conditions on a Si(001) surface. The preferred morphology of nanocrystals with a particular OR can be altered through changes to the Si/Fe flux ratio. Herein, the microstructure and basic OR between the silicide nanocrystals and the silicon substrate, and the formation of nanocrystal facets were analysed in detail with the help of microscopic techniques and simulation methods based on the analysis of near coincidence site (NCS) distributions at silicide/silicon interfaces. On the basis of the simulations used, we managed to reveal the nature of the interfaces observed for the main types of α-FeSi2 nanocrystals grown. Three types of interfaces typical for nanoplates with an α(001)//Si(001) basic OR, which are (i) stepped, (ii) stressed, and (iii) flat, are explained based on the tendency for the NCS density to increase at the interface. The results presented reveal the potential for the bottom-up fabrication of α-FeSi2 nanocrystals with tuned physical properties as potentially important contact materials and as building blocks for future nanoelectronic devices.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center, KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Reshetnev Siberian State University of Science and Technology, Krasnoyarsk, 660037, Russian Federation
Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Tarasov, I. A.; Тарасов, Иван Анатольевич; Smolyarova, T. E.; Смолярова, Татьяна Евгеньевна; Nemtsev, I. V.; Немцев, Иван Васильевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Solovyov, L. A.; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
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Solid-phase synthesis of manganese silicides on the Si(100)2 x 1 surface / S. N. Varnakov [et al.] // Phys. Solid State. - 2014. - Vol. 56, Is. 4. - P. 812-815, DOI 10.1134/S1063783414040337. - Cited References: 20. - This study was supported by the Russian-German Laboratory at HZB BESSY, the Russian Foundation for Basic Research (project nos. 13-02-00398 and 13-02-01265), the Council on Grants from the President of the Russian Federation for Support of the Leading Scientific Schools (grant no. NSh-1044.2012.2), and the Integration Project No. 85 of the Siberian and Ural Branches of the Russian Academy of Sciences. . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter
Рубрики:
PHOTOELECTRON-SPECTROSCOPY
GROWTH
FILMS
Аннотация: The solid-phase synthesis of manganese silicides on the Si(100)2 × 1 surface coated at room temperature by a 2-nm-thick manganese film has been investigated using high-energy-resolution photoelectron spectroscopy with synchrotron radiation. The dynamics of variation of the phase composition and electronic structure of the near-surface region with increasing sample annealing temperature to 600°C, has been revealed. It has been shown that, under these conditions, a solid solution of silicon in manganese, metallic manganese monosilicide MnSi, and semiconductor silicide MnSi1.7 are successively formed on the silicon surface. The films of both silicides are not continuous, with the fraction of the substrate surface occupied by them decreasing with increasing annealing temperature. The binding energies of the Si 2p and Mn 3p electrons in the compounds synthesized have been determined.

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Публикация на русском языке Твердофазный синтез силицидов марганца на поверхности Si(100)2x1 [Текст] / С. Н. Варнаков [и др.] // Физ. тверд. тела. - 2014. - Т. 56 Вып. 4. - С. 779-782

Держатели документа:
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Krasnoyarsk 660036, Russia
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

Доп.точки доступа:
Varnakov, S. N.; Варнаков, Сергей Николаевич; Gomoyunova, M. V.; Grebenyuk, G.S .; Zabluda, V. N.; Заблуда, Владимир Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Pronin, I. I.; Russian-German Laboratory at HZB BESSY; Russian Foundation for Basic Research [13-02-00398, 13-02-01265]; Council on Grants from the President of the Russian Federation for Support of the Leading Scientific Schools [NSh-1044.2012.2]; Siberian Branch of the Russian Academy of Sciences [85]; Ural Branch of the Russian Academy of Sciences [85]
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Selective synthesis of higher manganese silicides: a new Mn17Si30 phase, its electronic, transport, and optical properties in comparison with Mn4Si7 / I. A. Tarasov [et al.] // J. Mater. Sci. - 2018. - Vol. 53, Is. 10. - P. 7571–7594, DOI 10.1007/s10853-018-2105-y. - Cited References: 62. - This work was supported by the Russian Science Foundation, Project No. 16-13-00060. Aleksandr S. Aleksandrovsky thanks RFBR Grant No. 17-52-53031 for partial work related to the NIR measurements in section “Optical Properties”. The authors are grateful to Dr. A.V. Mudriy of Minsk State University for technical assistance. The equipment of the Center for Shared Use of Federal Research Center KSC SB RAS and the Ural Center “Modern Nanotechnology” of Ural Federal University was used. . - ISSN 0022-2461
Кл.слова (ненормированные):
Semiconducting silicon compounds
Аннотация: The electronic structure, transport and optical properties of thin films of Mn4Si7 and Mn17Si30 higher manganese silicides (HMS) with the Nowotny “chimney-ladder” crystal structure are investigated using different experimental techniques and density functional theory calculations. Formation of new Mn17Si30 compound through selective solid-state reaction synthesis proposed and its crystal structure is reported for the first time, the latter belonging to I-42d. Absorption measurements show that both materials demonstrate direct interband transitions around 0.9 eV, while the lowest indirect transitions are observed close to 0.4 eV. According to ab initio calculations, ideally structured Mn17Si30 is a degenerate n-type semiconductor; however, the Hall measurements on the both investigated materials reveal their p-type conductivity and degenerate nature. Such a shift of the Fermi level is attributed to introduction of silicon vacancies in accordance with our DFT calculations and optical characteristics in low photon energy range (0.076–0.4 eV). The Hall mobility for Mn17Si30 thin film was found to be 25 cm2/V s at T = 77 K, being the highest among all HMS known before. X-ray photoelectron spectroscopy discloses a presence of plasmon satellites in the Mn4Si7 and Mn17Si30 valence band spectra. Experimental permittivity spectra for the Mn4Si7 and Mn17Si30 compounds in a wide range (0.076–6.54 eV) also indicate degenerate nature of both materials and put more emphasis upon the intrinsic relationship between lattice defects and optical properties.

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Держатели документа:
Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Krasnoyarsk, Russian Federation
Siberian Federal University, Krasnoyarsk, Russian Federation
M.N. Miheev Institute of Metal Physics of the UB RAS, Yekaterinburg, Russian Federation
Institute of Physics and Technology, Ural Federal University, Yekaterinburg, Russian Federation
Siberian Federal University, Institute of Nanotechnology, Quantum Chemistry and Spectroscopy, Krasnoyarsk, Russian Federation
Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
Siberian State Aerospace University, Krasnoyarsk, Russian Federation
Institute of Natural Sciences, Ural Federal University, Yekaterinburg, Russian Federation

Доп.точки доступа:
Tarasov, I. A.; Тарасов, Иван Анатольевич; Visotin, M. A.; Высотин Максим Александрович; Kuznetzova, T. V.; Aleksandrovsky, A. S.; Александровский, Александр Сергеевич; Solovyov, L. A.; Kuzubov, A. A.; Nikolaeva, K. M.; Fedorov, A. S.; Федоров, Александр Семенович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Tomilin, F. N.; Томилин, Феликс Николаевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Smolyarova, T. E.; Смолярова, Татьяна Евгеньевна; Ivanenko, A. A.; Иваненко, Александр Анатольевич; Pryahina, V. I.; Esin, A. A.; Yarmoshenko, Y. M.; Shur, V. Y.; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
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10.

Reflection electron energy loss spectroscopy of structures based on silicon and transition metals / A. S. Parshin [et al.] // IOP Conf. Ser.: Mater. Sci. Eng. - 2017. - Vol. 255, Is. 1. - Ст. 012019, DOI 10.1088/1757-899X/255/1/012019. - Cited References: 24
Кл.слова (ненормированные):
Dissociation -- Electron emission -- Electron energy levels -- Electron scattering -- Electrons -- Energy dissipation -- Iron -- Iron compounds -- Silicides -- Silicon compounds -- Transition metals
Аннотация: The investigation of iron silicides FeSi2, FeSi and Fe5Si3 with the methods of reflection electron energy loss spectroscopy and inelastic electron scattering cross-section spectroscopy was carried out. It is shown that the shape and peak energy position of electron energy loss spectra are almost identical to silicides with different composition, while the amplitude of inelastic electron scattering cross-section spectra decreases with increasing of iron content. The decomposition of inelastic electron scattering cross-section spectra of FeSi2, FeSi and Fe5Si3 to Tougaard peaks is used for unresolved energy loss peaks analysis, determination its energies and identification bulk and surface peaks. The amplitude of fitting peak describing bulk plasmon excitation can be used for identification of the iron silicides with different composition.

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Parshin, A. S.; Паршин, Анатолий Сергеевич; Igumenov, A. Y.; Mikhlin, Y. L.; Михлин, Юрий Леонидович; Pchelyakov, O. P.; Zhigalov, V. S.; Жигалов, Виктор Степанович; International Scientific Conference Reshetnev Readings(20 ; 2016 ; Nov. 9-12 ; Krasnoyarsk)
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11.

Reflection electron energy loss spectroscopy of iron monosilicide / A. S. Parshin [et al.] // Russ. Phys. J. - 2017. - Vol. 59, Is. 10. - P. 1610-1615, DOI 10.1007/s11182-017-0952-7. - Cited References:14 . - ISSN 1064-8887. - ISSN 1573-9228

РУБ Physics, Multidisciplinary
Рубрики:
SCATTERING CROSS-SECTION
SPECTRA
Кл.слова (ненормированные):
iron silicides -- iron monosilicide -- inelastic electron scattering cross -- section spectroscopy -- reflection electron energy loss spectroscopy -- x-ray photoelectron spectroscopy
Аннотация: X-ray photoelectron spectra, reflection electron energy loss spectra, and inelastic electron scattering cross section spectra of iron monosilicide FeSi are investigated. It is shown that the spectra of inelastic electron scattering cross section have advantages over the reflection electron energy loss spectra in studying the processes of electron energy losses. An analysis of the fine structure of the inelastic electron scattering cross section spectra allows previously unresolved peaks to be identified and their energy, intensity, and nature to be determined. The difference between energies of fitting loss peaks in the spectra of inelastic electron scattering cross section of FeSi and pure Fe are more substantial than the chemical shifts in X-ray photoelectron spectra, which indicates the possibility of application of the fine structure of the spectra of inelastic electron scattering cross section for elemental analysis.

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Публикация на русском языке Спектроскопия потерь энергии отраженных электронов моносилицида железа [Текст] / А. С. Паршин [и др.] // Изв. вузов. Физика. - 2016. - Т. 59 № 10. - С. 82-86

Держатели документа:
MF Reshetnev Siberian State Aerosp Univ, Krasnoyarsk, Russia.
Russian Acad Sci, Inst Chem & Chem Technol, Siberian Branch, Krasnoyarsk, Russia.
Russian Acad Sci, AV Rzhanov Inst Semicond Phys, Novosibirsk, Russia.
Russian Acad Sci, LV Kirensky Inst Phys, Krasnoyarsk, Russia.

Доп.точки доступа:
Parshin, A. S.; Igumenov, A. Yu.; Mikhlin, Yu. L.; Pchelyakov, O. P.; Zhigalov, V. S.; Жигалов, Виктор Степанович
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12.

Quasiparticle band structure, spectral weights and degree of d-electron localization in iron silicides / I. S. Sandalov [et al.] // The Eighth Int. Sem. on Ferroelastic Phys. : book of abstracts. - 2015. - P. 362

Доп.точки доступа:
Sandalov, I. S.; Сандалов, Игорь Семёнович; Zamkova, N. G.; Замкова, Наталья Геннадьевна; Zhandun, V. S.; Жандун, Вячеслав Сергеевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; International seminar on ferroelastic physics(8 ; 2015 ; sept. ; 14-16 ; Voronezh); Международный семинар по физике сегнетоэластиков(8(13) ; 2015 ; сент. ; 13-16 ; Воронеж); Российская академия наук; Воронежский государственный технический университет
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13.

    Quasiparticle band structure, spectral weights and degree of d-electron localization in iron silicides / I. S. Sandalov [et al.] // Acta Crystallogr. A. - 2015. - Vol. 71, Supplement. - Ст. s362, DOI 10.1107/S2053273315094590 . - ISSN 0108-7673
   Перевод заглавия: Квазичастичная зонная структура, спектральные веса и степень локализации d-электронов в силицидах железа
Кл.слова (ненормированные):
strongly correlated electrons -- delocalization

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Доп.точки доступа:
Sandalov, I. S.; Сандалов, Игорь Семёнович; Zamkova, N. G.; Замкова, Наталья Геннадьевна; Zhandun, V. S.; Жандун, Вячеслав Сергеевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; European Crystallographic Meeting(29 ; 2015 ; Aug. ; 23-28 ; Rovinj, Croatia)
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14.

Morphology of the asymmetric iron-silicon interfaces / L. Badia-Romano [et al.] // J. Alloys Compd. - 2015. - Vol. 627. - P. 136-145, DOI 10.1016/j.jallcom.2014.12.019. - Cited References:69. - The financial support of the Spanish MINECO MAT2011-23791, the Presidentof Russia Grant (NSh-1044.2012.2), RFFI Grant 13-02-01265, the Ministryof Education and Science of Russian Federation (14.604.21.0002 and02G25.31.0043), Aragonese DGA-IMANA E34 (cofunded by Fondo SocialEuropeo) and that received from the European Union FEDER funds isacknowledged. L.B.R. acknowledges the Spanish MINECO FPU 2010 grant. . - ISSN 0925. - ISSN 1873-4669. -

РУБ Chemistry, Physical + Materials Science, Multidisciplinary + Metallurgy &
Рубрики:
RAY PHOTOELECTRON-SPECTROSCOPY
ELECTRON MOSSBAUER-SPECTROSCOPY
Кл.слова (ненормированные):
Fe/Si nanolayers -- Interfaces -- Fe silicides -- Compositional depth -- HAXPES -- CEMS
Аннотация: A systematic study of the iron–silicon interfaces formed upon preparation of (Fe/Si) multilayers has been performed by combination of modern and powerful techniques. Samples were prepared by thermal evaporation under ultrahigh vacuum onto a Si(1 0 0) substrate. The morphology of these films and their interfaces was studied by a combination of scanning transmission electron microscopy, X-ray reflectivity, angle resolved X-ray photoelectron spectroscopy and hard X-ray photoelectron spectroscopy. The Si-on-Fe interface thickness and roughness were determined to be 1.4(1) nm and 0.6(1) nm, respectively. Moreover, determination of the stable phases formed at both Fe-on-Si and Si-on-Fe interfaces was performed using conversion electron Mössbauer spectroscopy on multilayers with well separated Si-on-Fe and Fe-on-Si interfaces. It is shown that while a fraction of Fe remains as α-Fe, the rest has reacted with Si, forming the paramagnetic c-Fe1−xSi phase and a ferromagnetic Fe rich silicide (DO3 type phase). We conclude that the paramagnetic c-Fe1−xSi silicide sublayer is identical in both Si-on-Fe and Fe-on-Si interfaces, whereas an asymmetry is revealed in the composition of the ferromagnetic silicide sublayer.

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Держатели документа:
Univ Zaragoza, CSIC, Inst Ciencia Mat Aragon, E-50009 Zaragoza, Spain
Univ Zaragoza, Dept Fis Mat Condensada, E-50009 Zaragoza, Spain
Univ Zaragoza, Dept Ciencia Mat & Ingn Met, E-50018 Zaragoza, Spain
Univ Zaragoza, INA, LMA, E-50018 Zaragoza, Spain
Fdn ARAID, E-50004 Zaragoza, Spain
Russian Acad Sci, Kirensky Inst Phys, Siberian Div, Krasnoyarsk 660036, Russia
Siberian Aerosp Univ, Krasnoyarsk 660014, Russia
ESRF, SpLine Spanish CRG, F-38043 Grenoble, France
CSIC, Inst Ciencia Mat Madrid, Madrid, Spain

Доп.точки доступа:
Badía-Romano, L.; Rubin, J.; Bartolomé, F.; Magen, C.; Bartolome, J.; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Rubio-Zuazo, J.; Castro, G.R.
}
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15.

Morphological and compositional study at the Si/Fe interface of (Fe/Si) multilayer / L. Badia-Romano [et al.] // SPIN. - 2014. - Vol. 4, № 1. - P. 1440002DOI 10.1142/S2010324714400025
Кл.слова (ненормированные):
Fe-Si interlayer -- magnetic nanostructures -- Fe silicides -- reflectivity -- conversion electron Möossbauer spectroscopy
Аннотация: Diffusion and reaction of elements at the interfaces of nanostructured systems play an important role in controlling their physical and chemical properties for subsequent applications. (Fe/Si) nanolayers were prepared by thermal evaporation under ultrahigh vacuum onto a Si(100) substrate. A morphological characterization of these films was performed by combination of scanning transmission electron microscopy (STEM) and X-ray reflectivity (XRR). The compositional depth profile of the (Fe/Si) structures was obtained by angle resolved X-ray photoelectron spectroscopy (ARXPS) and hard X-ray photoelectron spectroscopy (HAXPES). Moreover, determination of the stable phases formed at the Si on Fe interfaces was performed using conversion electron Mössbauer spectroscopy. The Si/Fe interface thickness and roughness were determined to be 1.4 nm and 0.6 nm, respectively. A large fraction of the interface is composed of c-Fe1-xSi paramagnetic phase, though a minoritary ferromagnetic Fe rich silicide phase is also present.

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Доп.точки доступа:
Badía-Romano, L.; Rubin, J.; Bartolomé, F.; Bartolome, J.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Varnakov, S.N.; Варнаков, Сергей Николаевич; Magen, C.; Rubio-Zuazo, J.; Castro, G. R.
}
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16.

MBE of iron silicide heterostructures for spintronics / S. N. Varnakov [et al.] // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. I4.3. - P. 213. - References: 4. - The work was supported by The Complex program of SB RAS № II.2P, project 0358-2015-0003, the Ministry of Education and Science of the RF (State task . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
molecular beam epitaxy -- iron silicides -- spintronic devices

Доп.точки доступа:
Varnakov, S. N.; Варнаков, Сергей Николаевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Lyashchenko, S. A.; Лященко, Сергей Александрович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Molokeev, M. S.; Молокеев, Максим Сергеевич; Belyaev, B. A.; Беляев, Борис Афанасьевич; Zharkov, S. M.; Жарков, Сергей Михайлович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Bartolomé, J.; Badía-Romano, L.; Rubín, J. ; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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17.

Iron silicides formation on Si (100) and (111) surfaces through theoretical modeling of sputtering and annealing / I. V. Chepkasov, V. S. Baidyshev, E. V. Sukhanova [et al.] // Appl. Surf. Sci. - 2020. - Vol. 527. - Ст. 146736, DOI 10.1016/j.apsusc.2020.146736. - Cited References: 67. - We thank Dr. Ivan Tarasov for fruitful discussions. The research is carried out using the equipment of the shared research facilities of HPC computing resources at Lomonosov Moscow State University and resources of the Center for the Information and Computing of Novosibirsk State University. The molecular dynamics study of sputtering and annealing iron silicides was supported by the Russian Science Foundation, project no. 16-13-00060-П. All quantum-chemical calculations were supported by Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST “MISiS” (No. K2-2020-009) . - ISSN 0169-4332
Кл.слова (ненормированные):
Fe3Si -- Epitaxial films -- Sputtering -- Annealing -- MD simulation
Аннотация: The iron silicides formation during epitaxial film grown process on the (100) and (111) silicon surfaces were investigated using molecular dynamics (MD). The iron and silicon atom deposition rate and silicon substrate temperature influence on the formed iron silicide structure and stoichiometric composition were studied in detail. During the growth of iron silicide crystal structure significant diffusion of the substrate atoms into the forming BCC core occurs, this intensifies with the substrate temperature increase, and the ratio of substrate atoms inside the Fe3Si phase reaches nearly 12%. The BCC structure formation is less active on the (100) surface, and at the temperatures as low as 26 °C and 300 °C the iron silicide crystal phase does not form at all. However, with the temperature increase or the deposition rate decrease, the crystal structure formation processes occur more actively in both cases of (100) and (111) surfaces. Thus, the effect of the deposition rate decrease is identical to the temperature growth. It was shown that the formation of the structured B2 phase of iron silicide in buffer layer between the film and the substrate leads to the inhibition of the mutual diffusion of iron and silicon atoms.

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Держатели документа:
Skolkovo Institute of Science and Technology, 30, bld. 1 Bolshoy Boulevard, Moscow, 121205, Russian Federation
Katanov Khakas State University, 90 Lenin pr., Abakan, 655017, Russian Federation
Moscow Institute of Physics and Technology (National Research University), 9 Institutskiy per., Dolgoprudny, Moscow Region, 141701, Russian Federation
Emanuel Institute of Biochemical Physics RAS, Moscow, 199339, Russian Federation
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 50/38 Akademgorodok, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, 79 Svobodny pr., Krasnoyarsk, 660041, Russian Federation
EK-MFA, Dept. of Nanostructures, Budapest, Hungary
National University of Science and Technology MISiS, 4 Leninskiy pr., Moscow, 119049, Russian Federation
Plekhanov Russian University of Economics, 36 Stremyanny per., Moscow, 199339, Russian Federation

Доп.точки доступа:
Chepkasov, I. V.; Baidyshev, V. S.; Sukhanova, E. V.; Visotin, M. A.; Высотин, Максим Александрович; Sule, P.; Popov, Z. I.
}
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18.

Iron silicides and pure iron epitaxial and highly-textured nanostructures on silicon: growth and their physical properties : Invited / I. A. Tarasov [et al.] // International workshop on actual problems of condensed matter physics : Program. Book of abstracts / Fed. Res. Center KSC SB RAS, Kirensky Inst. of phys., Sib. Fed. Univ. - Krasnoyarsk, 2017. - P. 23

Материалы совещания

Доп.точки доступа:
Ovchinnikov, S. G. \предс. прогр. ком.\; Овчинников, Сергей Геннадьевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Visotin, M. A.; Solovyov, L. A.; Соловьев, Леонид Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Zhandun, V. S.; Жандун, Вячеслав Сергеевич; Nemtsev, I. V.; Немцев, Иван Васильевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Federal Research Center KSC SB RAS; Kirensky Institute of Physics; Siberian Federal Univercity; International Workshop on Actual Problems of Condensed Matter Physics(27 Mar. - 1 Apr. 2017 ; Krasnoyarsk / Cheremushki)
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19.

    International workshop on actual problems of condensed matter physics : Program. Book of abstracts / Fed. Res. Center KSC SB RAS, Kirensky Inst. of phys., Sib. Fed. Univ. ; предс. прогр. ком. S. G. Ovchinnikov. - Krasnoyarsk : [s. n.], 2017. - 30 p.
    Содержание:
Bondarev, I. A. Magnetic and transport properties of the epitaxial Fe3Si film on a Si substrate / I. A. Bondarev. - P .25
Yakovlev, I. A. The magnetic anisotropy of the Fe and Fe(1-x)Si(x) thin films depend on / I. A. Yakovlev [и др.]. - P .12
Другие авторы: Belyaev B. A., Rautskii M. V., Tarasov, I. A., Varnakov S. N, Ovchinnikov, S. G.
Popkov, S. I. Inverted opals as the Josephson networks of weak links : Invited / S. I. Popkov [и др.]. - P .24
Другие авторы: Gokhfeld D. M., Bykov A., Mistonov A., Shabanov A., Terentiev K.
Nikolaev, S. Electronic structure and Fermi surface within the cluster perturbation theory in X-operators representation : Invited / S. Nikolaev, V. I. Kuz'min, S. G. Ovchinnikov. - P .27
Fedorov, A. S. DFT investigation of electronic and optical magnetic properties of one dimensional transition metal halide structuresTmHaI3 : Invited / A. S. Fedorov [и др.]. - P .20
Другие авторы: Kuzubov A. A., Kovaleva E. A., Popova M. I., Kholtobina A. S., Mikhaleva N. S., Visotin M. A.
Ovchinnikov, S. G. Effect of interatomic exchange interaction on spin crossover and Mott-Hubbard transition under high pressure and the physical properties of the low Earth’s mantle : Invited / S. G. Ovchinnikov [и др.]. - P .26
Другие авторы: Orlov Yu. S., Nikolaev S., Nesterov A., Ovchinnikova T.
Tarasov, I. A. Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure / I. A. Tarasov [и др.]. - P .21
Другие авторы: Smolyakov D. A., Rautskii M. V., Lukyanenko A. V., Yakovlev I. A., Ovchinnikov S. G., Volkov N. V.
Volkov, N. V. Marnetic-field sensitivity of charge transport in silicon-based hybrid structures : Invited / N. V. Volkov [et al.]. - P .10
Другие авторы: Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Varnakov S. N., Bondarev I. A., Ovchinnikov S. G.
Lukyanenko, A. V. Fabrication of multi-terminal planar devices based on epitaxial Fe1-xSix films grown on Si(111) / A. V. Lukyanenko, A. S. Tarasov, I. A. Tarasov [et al.] ; A. V. Luyanenko [и др.]. - P .28
Другие авторы: Tarasov A. S., Tarasov I. A., Bondarev I. A., Smolyarova T. E., Yakovlev I. A., Volochaev M. N., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Rautskii, M. V. Magnetic field-driven lateral photovoltaic effect in the Fe/SiO2/p-Si hibrid structure with the Scottky barrier / M. V. Rautskii [и др.]. - P .29
Другие авторы: Tarasov A. S., Varnakov S. N., Bondarev I. A., Volochaev M. N., Lukyanenko A. V., Volkov N. V.
Moryachkov, R. Small angle X-ray scattering and atomic structure of aptamer biomolecules / R. Moryachkov [и др.]. - P .14-15
Другие авторы: Tomilin F. N., Shchugoreva I., Spiridonova V., Peters G., Zabluda V.
Tarasov, I. A. Iron silicides and pure iron epitaxial and highly-textured nanostructures on silicon: growth and their physical properties : Invited / I. A. Tarasov [и др.]. - P .23
Другие авторы: Visotin M. A., Solovyov L. A., Rautskii M. V., Zhandun, V. S., Nemtsev I. V., Yakovlev I. A., Varnakov S. N, Ovchinnikov, S. G.
Sokolov, A. E. Magnetic nanoparticles and DNA-aptamers conjugates for diagnostics and therapy of cancer : Invited / A. E. Sokolov [и др.]. - P .13
Другие авторы: Zamay S., Zamay T., Svetlichnyi V., Velikanov D.
Sandalov, I. S. The microscopic origin of ferromagnetism in Fe silicides : Invited / I. S. Sandalov [и др.]. - P .16
Другие авторы: Zamkova N. G., Zhandun V. S., Ovchinnikov, S. G.

Материалы конференции
Держатели документа:
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Ovchinnikov, S. G. \предс. прогр. ком.\; Овчинников, Сергей Геннадьевич; Lukyanenko, A. V.; Varnakov, S. N.; Bondarev, I. A.; Ovchinnikov, S. G.; Tarasov, I. A.; Svetlichnyi, V.; Velikanov, D. A.; Spiridonova, V.; Peters, G.; Zabluda, V. N.; Popova, M. I.; Kholtobina, A. S.; Mikhaleva, N. S.; Visotin, M. A.; Yakovlev, I. A.; Volkov, N. V.; Rautskii, M. V.; Zhandun, V. S.; Nemtsev, I. V.; Varnakov, S. N; Mistonov, A.; Shabanov, A. V.; Terentiev, K. Yu.; Nesterov, A.; Ovchinnikova, T.; Smolyarova, T. E.; Volochaev, M. N.; Federal Research Center KSC SB RAS; Kirensky Institute of Physics; Siberian Federal Univercity; International Workshop on Actual Problems of Condensed Matter Physics (27 Mar. - 1 Apr. 2017 ; Krasnoyarsk / Cheremushki)
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20.

Initial growth stages of manganese films on the Si(100)2 x 1 surface / S. N. Varnakov [et al.] // Phys. Solid State. - 2014. - Vol. 56, Is. 2. - P. 380-384, DOI 10.1134/S1063783414020310. - Cited References: 20. - This study was supported by the Russian-German Laboratory at HZB BESSY, the Ministry of Education and Science of the Russian Federation (agreement 14V37.21.1276), and the Russian Foundation for Basic Research (project nos. 13-02-00398 and 13-02-01265). . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter
Рубрики:
PHOTOELECTRON-SPECTROSCOPY
   ROOM-TEMPERATURE
   SILICIDES
   SILICON
Аннотация: Initial growth stages of manganese films on the Si(100)2 × 1 surface at room temperature have been investigated using high-energy-resolution photoelectron spectroscopy, and the dynamics of the variation in their phase composition and electronic structure with the coverage growth has been revealed. It has been shown that the interfacial manganese silicide and the film of the solid solution of silicon in manganese are sequentially formed under these conditions on the silicon surface. The growth of the metal manganese film starts after the deposition of ~0.9 nm Mn. Segregation of silicon on the film surface is observed in the range of coverages up to 1.6 nm Mn.

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Публикация на русском языке Начальные стадии роста пленок марганца на поверхности Si(100)2x1 [Текст] / С. Н. Варнаков [и др.] // Физ. тверд. тела. - 2014. - Т. 56 Вып. 2. - С. 375-379

Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

Доп.точки доступа:
Varnakov, S. N.; Варнаков, Сергей Николаевич; Gomoyunova, M. V.; Grebenyuk, G. S.; Zabluda, V. N.; Заблуда, Владимир Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Pronin, I. I.; Russian-German Laboratory at HZB BESSY; Ministry of Education and Science of the Russian Federation [14V37.21.1276]; Russian Foundation for Basic Research [13-02-00398, 13-02-01265]
}
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