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(La0.4Eu0.6)0.7Pb0.3MnO3 single crystal: magnetic and transport properties; electron magnetic resonance measurements / K. G. Patrin [et al.] // Workshop INTAS - Sib. Branch of the RAS Sci. Cooperation on the Res. Project “New Layered 3d-Materials for Spintronics” / chairman G. A. Petrakovskii. - 2007. - P. 15
Аннотация: INTAS (The International Association for the Promotion of Cooperation with Scientists from the New Independent States of the Former Soviet Union) — международная ассоциация по содействию сотрудничеству с учёными новых независимых государств бывшего Советского Союза. Некоммерческая организация, финансировалась главным образом из бюджета Европейского Союза. Являлась крупнейшим фондом, поддерживающим научное сотрудничество между учёными стран бывшего СССР и Европейского Союза с 1993 г. Программы INTAS охватывали широкий круг научно-исследовательских проблем. 22 сентября 2006 года было принято решение о прекращении осуществления программы на основании рекомендации Европейской Комиссии. С 1 апреля 2007 года прекратилось распределение новых грантов.

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Доп.точки доступа:
Petrakovskii, G. A. \chairman\; Петраковский, Герман Антонович; Patrin, K. G.; Патрин, Константин Геннадьевич; Volkov, N. V.; Волков, Никита Валентинович; Petrakovskii, G. A.; Boni, P.; Clementyev, E.; Sablina, K. A.; Саблина, Клара Александровна; Eremin, E. V.; Еремин, Евгений Владимирович; Vasilev, V.; Vasiliev, A. D.; Васильев, Александр Дмитриевич; Molokeev, M. S.; Молокеев, Максим Сергеевич; "New Layered 3d-Materials for Spintronics", Workshop INTAS - Siberian Branch of the Russian Academy of Sciences Scientific Cooperation on the Research Project(2007 ; March 20-23 ; Krasnoyarsk)
}
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Asymmetric interfaces in epitaxial off-stoichiometric Fe3+xSi1-x/Ge/Fe3+xSi1-x hybrid structures: Effect on magnetic and electric transport properties / A. S. Tarasov, I. A. Tarasov, I. A. Yakovlev [et al.] // Nanomaterials. - 2022. - Vol. 12, Is. 1. - Ст. 131, DOI 10.3390/nano12010131. - Cited References: 61. - The research was funded by RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-243007, and by the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886). I.A.T. and S.N.V. thank RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-240012, for partial work related to the development of the simulation model of the pore autocorrelated radial distribution function coupled with the near coincidence site model, the Fe3+xSi1-x lattice distortion analysis, and processing Rutherford backscattering spectroscopy data. The Rutherford backscattering spectroscopy measurements were supported by the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008) . - ISSN 2079-4991

РУБ Chemistry, Multidisciplinary + Nanoscience & Nanotechnology + Materials Science, Multidisciplinary + Physics, Applied
Рубрики:
FILMS
   ANISOTROPY
   SI(001)
   DEVICES
   SURFACE
   GROWTH
Кл.слова (ненормированные):
iron silicide -- germanium -- molecular beam epitaxy -- epitaxial stress -- lattice distortion -- dislocation lattices -- FMR -- Rutherford backscattering -- spintronics
Аннотация: Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 < x < 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.

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Держатели документа:
RAS, Fed Res Ctr KSC SB, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia.
RAS, Fed Res Ctr KSC SB, Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia.
RAS, Boreskov Inst Catalysis SB, Synchrotron Radiat Facil SKIF, Nikolskiy Prospekt 1, Koltsov 630559, Russia.
Immanuel Kant Balt Fed Univ, REC Smart Mat & Biomed Applicat, Kaliningrad 236041, Russia.
Immanuel Kant Balt Fed Univ, REC Funct Nanomat, Kaliningrad 236016, Russia.
Univ Duisburg Essen, Fac Phys, D-47057 Duisburg, Germany.
Univ Duisburg Essen, Ctr Nanointegrat, D-47057 Duisburg, Germany.

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Bondarev, I. A.; Бондарев, Илья Александрович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Platunov, M. S.; Платунов, Михаил Сергеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Efimov, Dmitriy D.; Goikhman, Aleksandr Yu.; Belyaev, B. A.; Беляев, Борис Афанасьевич; Baron, F. A.; Барон, Филипп Алексеевич; Shanidze, Lev V.; Шанидзе, Лев Викторович; Farle, M.; Фарле, Михаель; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Volkov, N. V.; Волков, Никита Валентинович; RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240012]; Government of the Russian Federation [075-15-2019-1886]; Ministry of Science and Higher Education of the Russian Federation [FZWN-2020-0008]
}
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    Bias-voltage-controlled ac and dc magnetotransport phenomena in hybrid structures / N. V. Volkov [et al.] // J. Magn. Magn. Mater. - 2015. - Vol. 383. - P. 69-72, DOI 10.1016/j.jmmm.2014.11.014. - Cited References:15. - This study was supported by the Russian Foundation for Basic Research, Projects nos. 14-02-00234-a and 14-02-31156, the Presidium of the Russian Academy of Sciences, Program Quantum Mesoscopic and Disordered Structures, Project no. 20.8 and the Ministry of Education and Science of the Russian Federation, Project no. 02.G25.31.0043. . - ISSN 0304-8853
   Перевод заглавия: Контролируемые напряжением смещения магнитотранспортные явления, наблюдаемые на постоянном и переменном токе в гибридных структурах

РУБ Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
SILICON
SPINTRONICS
FIELD
Кл.слова (ненормированные):
Spintronics -- Hybrid structures -- Magnetoresistance -- Magnetoimpedance -- Photoinduced magnetoresistance
Аннотация: We report some ac and dc magnetotransport phenomena in silicon-based hybrid structures. The giant impedance change under an applied magnetic field has been experimentally found in the metal/insulator/semiconductor (MIS) diode with the Schottky barrier based on the Fe/SiO2/p-Si and Fe/SiO2/n-Si structures. The maximum effect is found to observe at temperatures of 10-30 K in the frequency range 10 Hz-1 MHz, Below 1 kHz the magnetoresistance can be controlled in a wide range by applying a bias to the device. A photoinduced dc magnetoresistance of over 104% has been found in the Fe/SiO2/p-Si back-to-back Schottky diode. The observed magnetic-field-dependent effects are caused by the interface states localized in the insula-tor/semiconductor interface. (C) 2014 Elsevier B.V. All rights reserved.

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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Russian Foundation for Basic Research [14-02-00234-a, 14-02-31156]; Presidium of the Russian Academy of Sciences [20.8]; Ministry of Education and Science of the Russian Federation [02.G25.31.0043]; Moscow International Symposium on Magnetism(6 ; 2014 ; June-July ; Moscow)
}
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Buckminsterfullerene's movability on the Fe(001) surface / A. A. Kuzubov [et al.] // J. Magn. Magn. Mater. - 2016. - Vol. 410. - P. 41-46, DOI 10.1016/j.jmmm.2016.03.023. - Cited References: 32. - This work was supported by the Russian Scientific Fund (Project no. 14-13-00139) and the Foundation for Assistance to Small Innovative Enterprises (FASIE) (Project no. 0011742). The authors would like to thank Institute of Computational Modeling of SB RAS, Krasnoyarsk; Joint Supercomputer Center of RAS, Moscow; Center of Equipment for Joint Use of Siberian Federal University, Krasnoyarsk; ICC of Novosibirsk State University and Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk for providing the access to their supercomputers. . - ISSN 0304-8853

РУБ Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
Initio molecular-dynamics
Total-energy calculations
Augmented-wave
Кл.слова (ненормированные):
Buckminsterfullerene -- C60 -- Fe(001) -- Spintronics -- Adsorption -- Relocation -- DFT
Аннотация: Organic-based spintronics is one of the most fast-developing fields in nanoelectronics. Buckminsterfullerene-based composites are widely investigated due to its unique properties and there is a number of studies concerned with its interfaces with various types of substrates. Ferromagnetic surfaces are of a particular interest for potential spintronics applications. Based on the data reported in literature, we suppose that there are more than one stable structure in C60/Fe(001) composite system. Here we investigate different possible adsorption sites of C60 molecule and reveal the possibility of their coexistence and its influence on the composite properties. © 2016 Elsevier B.V.

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Держатели документа:
Siberian Federal University, 79 Svobodny pr., Krasnoyarsk, Russian Federation
L.V. Kirensky Institute of Physics, 50 Akademgorodok, Krasnoyarsk, Russian Federation
Kyungpook National University, 80 Daehakro, Bukgu, Daegu, South Korea

Доп.точки доступа:
Kuzubov, A. A.; Кузубов, Александр Александрович; Kovaleva, E. A.; Avramov, P. V.; Аврамов, Павел Вениаминович; Kholtobina, A. S.; Mikhaleva, N. S.; Kuklin, A. V.; Куклин, Артем Валентинович
}
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Cation-substituted TmXMn1-XS solid solutions with special magnetic and electrical properties / O. B. Romanova [et al.] // 20th Int. Conf. on Magnetism (ICM-2015) : book of abstracts. - 2015. - P. 241
Рубрики:
Semiconductor spintronics

Материалы конференции

Доп.точки доступа:
Romanova, O. B.; Романова, Оксана Борисовна; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Galyas, A. I.; Галяс А. И.; Yanushkevich, K. I.; Янушкевич, Казимир Иосифович; Sokolov, V. V.; Соколов В. В.; International Conference on Magnetism(20 ; 2015 ; Jul ; 5-10 ; Barselona, Spain)
}
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CEMS analysis of phase formation in nanostructured films (Fe/Si)3 [Text] / S. N. Varnakov, S. G. Ovchinnikov [et al.] // IV Euro-Asian Symposium "Trends in MAGnetism" Nanospintronics (EASTMAG-2010). School for young scientist "Spintronics" : June 28 - Lule 2, 2010"Book of abstracts. - Ekaterinburg, 2010. - P. 201

РИНЦ

Доп.точки доступа:
Varnakov, S.N.; Ovchinnikov, S.G.; Bartolomé, J.; Rubín, J.; Badía, L.; Bondarenko, G.V.; Euro-Asian Symposium "Trends in MAGnetism"(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg); "Trends in MAGnetism", Euro-Asian Symposium(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg); Уральское отделение РАН
}
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Characterization of LSMO/C60 spinterface by first-principle calculations / E. A. Kovaleva [et al.] // Org. Electron.: Phys. Mater. Appl. - 2016. - Vol. 37. - P. 55-60, DOI 10.1016/j.orgel.2016.06.021. - Cited References: 40. - This work was supported by the Russian Scientific Fund (Project No. 14-13-00139). The authors would like to thank Institute of Computational Modeling of SB RAS, Krasnoyarsk; Joint Supercomputer Center of RAS, Moscow; Center of Equipment for Joint Use of Siberian Federal University, Krasnoyarsk; ICC of Novosibirsk State University and Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk for providing the access to their supercomputers. . - ISSN 1566-1199

РУБ Materials Science, Multidisciplinary + Physics, Applied
Рубрики:
INITIO MOLECULAR-DYNAMICS
   TOTAL-ENERGY CALCULATIONS
   AUGMENTED-WAVE METHOD
   ORGANIC SPIN-VALVES
   BASIS-SET
   SEMICONDUCTORS
   INJECTION
   SPINTRONICS
   TEMPERATURE
   ALGORITHM
Кл.слова (ненормированные):
C60 -- LSMO -- Spinterface -- DFT -- Magnetic ordering
Аннотация: Spinterface between fullerene C60 and La0 7Sr0 3MnO3 (LSMO) was studied by means of density functional theory. Co-existence of many different configurations was shown, and probabilities of their appearance were estimated. Dependence of composite properties on configuration and temperature was also investigated. Key role of transition metal atoms in both binding between composite compartments and magnetic ordering in C60 molecule was discussed. The latter was suggested to be responsible for spin-polarized charge transport while overall magnetic moment of fullerene molecule is relatively small. © 2016 Elsevier B.V.

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Держатели документа:
Siberian Federal University, 79 Svobodny pr., Krasnoyarsk, Russian Federation
L.V. Kirensky Institue of Physics, 50 Akademgorodok, Krasnoyarsk, Russian Federation
Kyungpook National University, 80 Daekharo Bukgu, Daegu, South Korea
Siberian State Technological University, 82 Mira pr., Krasnoyarsk, Russian Federation

Доп.точки доступа:
Kovaleva, E. A.; Kuzubov, A. A.; Кузубов, Александр Александрович; Avramov, P. V.; Аврамов, Павел Вениаминович; Kuklin, A. V.; Куклин, Артем Валентинович; Mikhaleva, N. S.; Krasnov, P. O.; Краснов, Павел Олегович
}
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Combined effects of 2D and 3D inhomogeneities on high-frequency susceptibility of superlattices [Text] / V. A. Ignatchenko, D. S. Tsikalov // IV Euro-Asian Symposium "Trends in MAGnetism" Nanospintronics (EASTMAG-2010). School for young scientist "Spintronics" : June 28 - Lule 2, 2010"Book of abstracts. - Ekaterinburg, 2010. - P. 327

РИНЦ

Доп.точки доступа:
Ignatchenko, V.A.; Tsikalov, D.S.; Euro-Asian Symposium "Trends in MAGnetism"(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg); "Trends in MAGnetism", Euro-Asian Symposium(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg)Уральское отделение РАН
}
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Contact-induced spin polarization in graphene/h-BN/Ni nanocomposites / P. V. Avramov [et al.] // J. Appl. Phys. - 2012. - Vol. 112, Is. 11. - Ст. 114303. - P. , DOI 10.1063/1.4767134. - Cited References: 47. - This work was supported by JAEA Research fellowship (P.V.A.). P.V.A. also acknowledges JAEA ASRC and Molecular Spintronics Group for hospitality and fruitful collaboration. The authors are grateful to the ICS SB RAS and SFU CC (Krasnoyarsk), ISC RAS and MSU CRC, (SKIF MSU "Chebyshev", Moscow) for computer resources. This work was partially supported by the RFBR grant 12-02-31417. . - ISSN 0021-8979

РУБ Physics, Applied + Boron nitride + Electronic structure + Nanocomposites + Plates (structural components) + Spin polarization + Graphene
Рубрики:
HEXAGONAL BORON-NITRIDE
   TRILAYER GRAPHENE
   NI(111) SURFACE
   GRAPHITE
   APPROXIMATION
   SPINTRONICS
   DIFFRACTION
   SIMULATION
   SUBSTRATE
   CARBON
Аннотация: Atomic and electronic structure of graphene/Ni(111), h-BN/Ni(111) and graphene/h-BN/Ni(111) nanocomposites with different numbers of graphene and h-BN layers and in different mutual arrangements of graphene/Ni and h-BN/Ni at the interfaces was studied using LDA/PBC/PW technique. Using the same technique corresponding graphene, h-BN and graphene/h-BN structures without the Ni plate were calculated for the sake of comparison. It was suggested that C-top:C-fcc and N-top:B-fcc configurations are energetically favorable for the graphene/Ni and h-BN/Ni interfaces, respectively. The Ni plate was found to induce a significant degree of spin polarization in graphene and h-BN through exchange interactions of the electronic states located on different fragments. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767134]

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Держатели документа:
[Avramov, Pavel V.
Sakai, Seiji
Ohtomo, Manabu
Entani, Shiro
Matsumoto, Yoshihiro
Naramoto, Hiroshi] Japan Atom Energy Agcy, Adv Sci Res Ctr, Tokai, Ibaraki 3191195, Japan
[Avramov, Pavel V.
Kuzubov, A. A.
Eleseeva, Natalia S.] LV Kirensky Inst Phys SB RAS, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Avramov, P. V.; Аврамов, Павел Вениаминович; Kuzubov, A. A.; Sakai, Seiji; Ohtomo, Manabu; Entani, Shiro; Matsumoto, Yoshihiro; Naramoto, Hiroshi; Eleseeva, N. S.; Елисеева, Наталья Сергеевна
}
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10.

Controlled channel switching in hybrid tunnel structures [Text] / N. V. Volkov, E. V. Eremin [et al.] // IV Euro-Asian Symposium "Trends in MAGnetism" Nanospintronics (EASTMAG-2010). School for young scientist "Spintronics" : June 28 - Lule 2, 2010"Book of abstracts. - Ekaterinburg, 2010. - P. 200

РИНЦ

Доп.точки доступа:
Volkov, N.V.; Eremin, E.V.; Varnakov, S.N.; Ovchinnikov, S.G.; Tarasov, A.S.; Euro-Asian Symposium "Trends in MAGnetism"(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg); "Trends in MAGnetism", Euro-Asian Symposium(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg); Уральское отделение РАН
}
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11.

Kagan, M. Yu..
Coulomb interactions-induced perfect spin-filtering effect in a quadruple quantum-dot cell / M. Y. Kagan, V. V. Val'kov, S. V. Aksenov // J. Magn. Magn. Mater. - 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P. 15-18, DOI 10.1016/j.jmmm.2016.12.106. - Cited References:29. - We acknowledge fruitful discussions with P.I. Arseyev, N.S. Maslova, V.N. Mantsevich and R.Sh. Ikhsanov. This work was supported by the Comprehensive programme SB RAS no. 0358-2015-0007, the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects nos. 15-02-03082, 16-42-243056, 16-42-242036, 17-42-240441. M.Yu.K. thanks the Program of Basic Research of the National Research University Higher School of Economics for support. . - ISSN 0304-8853. - ISSN 1873-4766

РУБ Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
SPINTRONICS
TRANSPORT
MODEL
Кл.слова (ненормированные):
Spin filter -- Quantum interference -- Fano-Feshbach resonance -- Coulomb -- correlations
Аннотация: A quadruple quantum-dot (QQD) cell is proposed as a spin filter. The transport properties of the QQD cell were studied in linear response regime on the basis of the equations of motion for retarded Green's functions. The developed approach allowed us to take into account the influence of both intra-and interdot Coulomb interactions on charge carriers' spin polarization. It was shown that the presence of the insulating bands in the conductance due to the Coulomb correlations results in the emergence of spin-polarized windows (SPWs) in magnetic field leading to the high spin polarization. We demonstrated that the SPWs can be effectively manipulated by gate fields and considering the hopping between central dots in both isotropic and anisotropic regimes.

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Доп.точки доступа:
Val'kov, V. V.; Вальков, Валерий Владимирович; Aksenov, S. V.; Аксенов, Сергей Владимирович; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН
}
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12.

Current-driven channel switching and colossal positive magnetoresistance in the manganite-based structure / N. V. Volkov [et al.] // J. Phys. D. - 2009. - Vol. 42, Is. 6. - Ст. 65005, DOI 10.1088/0022-3727/42/6/065005. - Cited References: 20. - This study was supported by the RFBR, Projects No 08-02-00259-a and 08-02-00397-a, the KRSF-RFBR 'Enisey-2007', Project No 07-02-96801-a and the Division of Physical Sciences of RAS, Program 'Spin-dependent Effects in Solids and Spintronics' (Project No 2.4.2 of SB RAS). . - ISSN 0022-3727

РУБ Physics, Applied

Кл.слова (ненормированные):
Colossal magnetoresistance -- Electric resistance -- Electronic structure -- Magnetic field effects -- Magnetoelectronics -- Manganese -- Manganites -- Oxide minerals -- Schottky barrier diodes -- Semiconductor junctions -- Silicides -- Tunnel junctions -- Tunnels -- Bottom layers -- Channel switching -- Conducting channels -- Conducting layers -- Current-driven -- Current-in-plane geometries -- Depletion layers -- Ferromagnetic state -- Layered structures -- Low-resistance contacts -- Magnetic tunnel junctions -- Magneto-transport properties -- Manganese silicides -- Manganite films -- New mechanisms -- Positive magnetoresistances -- Positive MR -- Potential barriers -- Spin-polarized -- Tunnel structures -- Voltage-current characteristics -- Current voltage characteristics
Аннотация: The transport and magnetotransport properties of a newly fabricated tunnel structure manganite/depletion layer/manganese silicide have been studied in the current-in-plane (CIP) geometry. A manganite depletion layer in the structure forms a potential barrier sandwiched between two conducting layers, one of manganite and the other of manganese silicide. The voltage-current characteristics of the structure are nonlinear due to switching conducting channels from an upper manganite film to a bottom, more conductive MnSi layer with an increase in the current applied to the structure. Bias current assists tunnelling of a carrier across the depletion layer; thus, a low-resistance contact between the current-carrying electrodes and the bottom layer is established. Below 30 K, both conducting layers are in the ferromagnetic state (magnetic tunnel junction), which allows control of the resistance of the tunnel junction and, consequently, switching of the conducting channels by the magnetic field. This provides a fundamentally new mechanism of magnetoresistance (MR) implementation in the magnetic layered structure with CIP geometry. MR of the structure under study depends on the bias current and can reach values greater than 400% in a magnetic field lower than 1 kOe. A positive MR value is related to peculiarities of the spin-polarized electronic structures of manganites and manganese silicides.

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Держатели документа:
[Volkov, N. V.
Eremin, E. V.
Tsikalov, V. S.
Patrin, G. S.
Kim, P. D.] SB RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
[Volkov, N. V.
Patrin, G. S.] Siberian Fed Univ, Dept Phys, Krasnoyarsk 660041, Russia
[Seong-Cho, Yu
Kim, Dong-Hyun] Chungbuk Natl Univ, Dept Phys, Cheongju 361763, South Korea
[Chau, Nguyen] Natl Univ Hanoi, Ctr Mat Sci, Hanoi, Vietnam
ИФ СО РАН
Kirensky Institute of Physics, SB RAS, Krasnoyarsk 660036, Russian Federation
Department of Physics, Siberian Federal University, Krasnoyarsk 660041, Russian Federation
Department of Physics, Chungbuk National University, Cheongju 361-763, South Korea
Center for Materials Science, National University of Hanoi, 334 Nguyen Trai, Hanoi, Viet Nam

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Tsikalov, V. S.; Patrin, G. S.; Патрин, Геннадий Семёнович; Kim, P. D.; Ким, Пётр Дементьевич; Seong-Cho, Y.; Kim, D. H.; Chau, N.; RFBR [08-02-00259-a, 08-02-00397-a]; KRSF-RFBR [07-02-96801-a]; Division of Physical Sciences of RAS; Program 'Spin-dependent Effects in Solids and Spintronics' [2.4.2]
}
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13.

Determination of magnetic anisotropies and miscut angles in epitaxial thin films on vicinal (111) substrate by the ferromagnetic resonance / B. A. Belyaev [et al.] // J. Magn. Magn. Mater. - 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P. 181-184, DOI 10.1016/j.jmmm.2016.12.081. - Cited References:16. - This work was supported by the Ministry of Education and Science of the Russian Federation, Task no. 3.528.2014K. . - ISSN 0304-8853. - ISSN 1873-4766

РУБ Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
SURFACE
SPECTROMETER
SPINTRONICS
Кл.слова (ненормированные):
Thin film -- Ferromagnetic resonance -- Magnetic anisotropy -- Vicinal (111) -- surface -- Iron silicide
Аннотация: A method for determining magnetic anisotropy parameters of a thin single-crystal film on vicinal (111) substrate as well as substrate miscut angles from angular dependence of ferromagnetic resonance field has been proposed. The method is based on the following: (i) a new approach for the solution of the system of nonlinear equations for equilibrium and resonance conditions; (ii) a new expression of the objective function for the fitting problem. The study of the iron silicide films grown on vicinal Si(111) substrates with different miscut angles confirmed the efficiency of the method. The proposed method can be easily generalized to determine parameters of single-crystal films grown on substrates with an arbitrary cut.

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Доп.точки доступа:
Belyaev, B. A.; Беляев, Борис Афанасьевич; Izotov, A. V.; Изотов, Андрей Викторович; Solovev, P. N.; Соловьев, Платон Николаевич; Yakovlev, I. A.; Ministry of Education and Science of the Russian Federation [3.528.2014K]; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН
}
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14.

Determination of magnetic exchange interactions by inelastic neutron scattering on the example of CuB2O4 / M. Boehm [et al.] // Workshop INTAS - Sib. Branch of the RAS Sci. Cooperation on the Res. Project “New Layered 3d-Materials for Spintronics” / chairman G. A. Petrakovskii. - 2007. - P. 10
Аннотация: INTAS (The International Association for the Promotion of Cooperation with Scientists from the New Independent States of the Former Soviet Union) — международная ассоциация по содействию сотрудничеству с учёными новых независимых государств бывшего Советского Союза. Некоммерческая организация, финансировалась главным образом из бюджета Европейского Союза. Являлась крупнейшим фондом, поддерживающим научное сотрудничество между учёными стран бывшего СССР и Европейского Союза с 1993 г. Программы INTAS охватывали широкий круг научно-исследовательских проблем. 22 сентября 2006 года было принято решение о прекращении осуществления программы на основании рекомендации Европейской Комиссии. С 1 апреля 2007 года прекратилось распределение новых грантов.

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Доп.точки доступа:
Petrakovskii, G. A. \chairman\; Петраковский, Герман Антонович; Boehm, M.; Rasch, J.; Schefer, J.; Ouladdiaf, B.; Roessli, B.; Keller, L.; Bezmaternykh, L. N.; Безматерных, Леонард Николаевич; Petrakovskii, G. A.; "New Layered 3d-Materials for Spintronics", Workshop INTAS - Siberian Branch of the Russian Academy of Sciences Scientific Cooperation on the Research Project(2007 ; March 20-23 ; Krasnoyarsk)
}
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15.

Val'kov, V. V.
Double exchange model in the problem of the colossal magnetoresistance manganites / V. Val'kov // Workshop INTAS - Siberian Branch of the Russian Academy of Sciences Scientific Cooperation on the Research Project "New Layered 3d-Materials for Spintronics" : (books of abstrats) : March 20-23, 2007 Krasnoyarsk, Russia. - Красноярск, 2007. - P. 8

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Доп.точки доступа:
Вальков Валерий Владимирович; "New Layered 3d-Materials for Spintronics", Workshop INTAS - Siberian Branch of the Russian Academy of Sciences Scientific Cooperation on the Research Project(2007 ; Marh ; Krasnoyarsk)Институт физики им. Л.В. Киренского Сибирского отделения РАН; ETH Zurich and Paul Scherrer Institute, Condensed Matter Research with Neutron and Muons Department; Institute of Physics of Polish Academy of Sciences; Институт неорганической химии им. А.В.Николаева СО РАН
}
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16.

Val'kov, V. V.
Double exchange model in the problem of the colossal magnetoresistance manganites / V. V. Val'kov // Workshop INTAS - Sib. Branch of the RAS Sci. Cooperation on the Res. Project “New Layered 3d-Materials for Spintronics” / chairman G. A. Petrakovskii. - 2007. - P. 8
Аннотация: INTAS (The International Association for the Promotion of Cooperation with Scientists from the New Independent States of the Former Soviet Union) — международная ассоциация по содействию сотрудничеству с учёными новых независимых государств бывшего Советского Союза. Некоммерческая организация, финансировалась главным образом из бюджета Европейского Союза. Являлась крупнейшим фондом, поддерживающим научное сотрудничество между учёными стран бывшего СССР и Европейского Союза с 1993 г. Программы INTAS охватывали широкий круг научно-исследовательских проблем. 22 сентября 2006 года было принято решение о прекращении осуществления программы на основании рекомендации Европейской Комиссии. С 1 апреля 2007 года прекратилось распределение новых грантов.

Материалы семинара,
Читать в сети ИФ

Доп.точки доступа:
Petrakovskii, G. A. \chairman\; Петраковский, Герман Антонович; Вальков, Валерий Владимирович; "New Layered 3d-Materials for Spintronics", Workshop INTAS - Siberian Branch of the Russian Academy of Sciences Scientific Cooperation on the Research Project(2007 ; March 20-23 ; Krasnoyarsk)
}
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17.

Effect of magnetic field on the spin-dependent electron transport through nanostructures taking into account inelastic effects [Text] / V. V. Val’kov, S. V. Aksenov // IV Euro-Asian Symposium "Trends in MAGnetism" Nanospintronics (EASTMAG-2010). School for young scientist "Spintronics" : June 28 - Lule 2, 2010"Book of abstracts. - Ekaterinburg, 2010. - P. 184

РИНЦ

Доп.точки доступа:
Val’kov, V.V.; Aksenov, S.V.; Euro-Asian Symposium "Trends in MAGnetism"(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg); "Trends in MAGnetism", Euro-Asian Symposium(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg)Уральское отделение РАН
}
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18.

Effect of short order antiferromagnetic correlations on the normal and superconducting properties in copper oxides [Text] / S. G. Ovchinnikov, M. M. Korshunov, E. I. Shneyder // IV Euro-Asian Symposium "Trends in MAGnetism" Nanospintronics (EASTMAG-2010). School for young scientist "Spintronics" : June 28 - Lule 2, 2010"Book of abstracts. - Ekaterinburg, 2010. - P. 60

РИНЦ

Доп.точки доступа:
Ovchinnikov, S.G.; Korshunov, M.M.; Shneyder, E.I.; Euro-Asian Symposium "Trends in MAGnetism"(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg); "Trends in MAGnetism", Euro-Asian Symposium(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg); Уральское отделение РАН
}
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19.

Effects of correlated inhomogeneities of the spectral properties of disordered ferro magnets and superlattices [Text] / V. A. Ignatchenko // IV Euro-Asian Symposium "Trends in MAGnetism" Nanospintronics (EASTMAG-2010). School for young scientist "Spintronics" : June 28 - Lule 2, 2010"Book of abstracts. - Ekaterinburg, 2010. - P. 300 (Invited)

РИНЦ

Доп.точки доступа:
Ignatchenko, V.A.; Euro-Asian Symposium "Trends in MAGnetism"(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg)"Trends in MAGnetism", Euro-Asian Symposium(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg); Уральское отделение РАН
}
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20.

Electrical and thermoelectric properties of cation – substituted GdXMn1-XS sulphides [Text] / O. F. Demidenko, A. I. Galyas [et al.] // IV Euro-Asian Symposium "Trends in MAGnetism" Nanospintronics (EASTMAG-2010). School for young scientist "Spintronics" : June 28 - Lule 2, 2010"Book of abstracts. - Ekaterinburg, 2010. - P. 72

РИНЦ

Доп.точки доступа:
Demidenko, O.F.; Galyas, A.I.; Makovetskii, G.I.; Romanova, O.B.; Ryabinkina, L.I.; Yanushkevich, K.I.; Euro-Asian Symposium "Trends in MAGnetism"(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg); "Trends in MAGnetism", Euro-Asian Symposium(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg); Уральское отделение РАН
}
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