Библиотека института физики им. Л.В. Киренского СО РАН

Главная

Базы данных

Труды сотрудников ИФ СО РАН - результаты поиска

Вид поиска

Каталог книг и брошюр библиотеки ИФ СО РАН

Каталог журналов библиотеки ИФ СО РАН

Труды сотрудников ИФ СО РАН

Область поиска

в найденном

Найдено в других БД:

Каталог книг и брошюр библиотеки ИФ СО РАН (1)

Формат представления найденных документов:
полный	информационный	краткий

Отсортировать найденные документы по:
автору	заглавию	году издания	типу документа

Поисковый запрос: (<.>K=substrate<.>)

Общее количество найденных документов : 68
Показаны документы с 1 по 20

1-20 21-40 41-60 61-68

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Belyaev B. A., Khodenkov S. A., Govorun I. V., Serzhantov A. M.
Заглавие : A high-selectivity wideband bandpass dual-mode microstrip filter
Место публикации : Dokl. Phys. - 2022. - Vol. 67, Is. 3. - P.89-93. - ISSN 10283358 (ISSN), DOI 10.1134/S1028335822020021. - ISSN 15626903 (eISSN)
Примечания : Cited References: 12. - This study was carried out within a State Assignment, project no. FEFE-2020-0013, of the Ministry of Science and Higher Education of the Russian Federation
Аннотация: A half-wave microstrip resonator design with an irregular strip conductor short-circuited to the screen by its ends has been investigated. Based on the resonances of the first two oscillatory modes of this resonator, a miniaturized second-order filter with a fractional bandwidth from 40% to 90% has been implemented, which has a wide high-frequency stopband. A prototype of the designed eight-order filter based on four dual-mode resonators with a passband center frequency of 2 GHz and a fractional bandwidth of 40% has been fabricated on an alumina substrate 45.0 × 10.5 × 1.0 mm3 in size with a permittivity of ε = 9.8. The filter frequency response slopes are extremely steepness due to two attenuation poles located on the left and right sides of the passband. The experimental characteristics of the prototype are in good agreement with the data of the numerical electromagnetic simulation of the 3D model of the filter.
Смотреть статью
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Belyaev B. A., Serzhantov A. M., Bal'va Y. F., Leksikov An. A., Grushevskii E. O.
Заглавие : A Highly Selective Bandpass Filter Based on Suspended Substrate Resonators with a Two-Sided Stripline Pattern
Коллективы : Ministry of Education and Science of the Russian Federation [14.575.21.0142, RFMEFI57517X0142]
Место публикации : Tech. Phys. Lett. - 2019. - Vol. 45, Is. 5. - P485-488. - ISSN 1063-7850, DOI 10.1134/S1063785019050225. - ISSN 1090-6533(eISSN)
Примечания : Cited References: 14. - This study was supported in part by the Ministry of Education and Science of the Russian Federation, agreement no. 14.575.21.0142, unique project identifier RFMEFI57517X0142.
Предметные рубрики: MICROSTRIP
FEATURES
Аннотация: New resonator design employing a hairpin stripline conductor with a stub situated on one side of a dielectric substrate and regular stripline conductors (connected to a screen) on the other side. Eigenfrequencies of the first three oscillation modes of this resonator can be made closer to each other, so that the resonances of two modes are involved in the formation of the passband while the third mode resonance forms a minimum of the transmission coefficient adjacent to the passband. A structure comprising four resonators of this type has the characteristic of an eighth-order bandpass filter arranged in a case with 45 × 16 × 6.25-mm internal dimensions possessing f0 = 0.52 GHz central frequency with a 14% relative bandwidth. The filter is highly selective due to the attenuation poles being close to the pass band and a wide high-frequency stopband extending above a fivefold f0 value at a level of –100 dB.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Belyaev B. A., Serzhantov A. M., Leksikov An. A., Bal'va Y. F., Grushevskii E. O., Khodenkov S. A.
Заглавие : A highly selective stripline lowpass filter with more than 100-dB wide stopband attenuation
Коллективы : Ministry of Education and Science of the Russian FederationMinistry of Education and Science, Russian Federation [02G25.31.0330]
Место публикации : Tech. Phys. Lett. - 2020. - Vol. 46, Is. 4. - P.364-367. - ISSN 1063-7850, DOI 10.1134/S1063785020040173. - ISSN 1090-6533(eISSN)
Примечания : Cited References: 8. - This study was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of agreement no. 02G25.31.0330.
Аннотация: A new miniature design of a highly selective lowpass filter based on a suspended substrate with a two-sided stripline pattern has been developed. The filter frequency response slope (cutoff attenuation rate) and stopband attenuation depth are determined by transmission zeros, the number of which is equal to the filter order. An experimental prototype of a fifth-order lowpass filter on 0.5-mm-thick alumina substrate with dielectric permittivity ε = 9.8 has been synthesized with the aid of numerical electrodynamic analysis of a three-dimensional model. The cutoff frequency of the filter passband at a –1-dB level is fc = 1.75 GHz. The stopband width at a –100-dB attenuation level reaches 4.4fc.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Leksikov A. A., Serzhantov A. M., Govorun I. V., Afonin A. O., Ugryumov A. V., Leksikov An. A.
Заглавие : A method of stopband widening in BPF based on two-conductor suspended-substrate resonators
Место публикации : Prog. Electromagn. Res. Lett. - 2018. - Vol. 72. - P.11-16. - ISSN 19376480 (ISSN), DOI 10.2528/PIERL17102302
Примечания : Cited References: 10
Ключевые слова (''Своб.индексиров.''): fourth order--microwave bandpass filter--stopband--stripline resonators--suspended substrates--wide upper stopband
Аннотация: A method aiming to widen the upper stopband in a microwave bandpass filter based on two-conductor suspended-substrate stripline resonators is described in this letter. Applicability of the method is illustrated by simulating and fabricating fourth-order filter that has a very wide upper stopband: Δfstop/f0 = 7.92 measured at a level -50 dB, which is achieved because the widths of the inner resonators in the structure are 1.4 times greater than that of the outer ones.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Belyaev B. A., Voloshin A. S., Bulavchuk A. S., Galeev R. G.
Заглавие : A miniature filter on a suspended substrate with a two-sided pattern of strip conductors
Место публикации : Tech. Phys. Lett.: MAIK Nauka-Interperiodica / Springer, 2016. - Vol. 42, Is. 6. - P.622-625. - ISSN 10637850 (ISSN), DOI 10.1134/S1063785016060195
Примечания : Cited References: 15. - This study was supported in part by the Ministry of Education and Science of the Russian Federation, project no. 14.607.21.0039.
Предметные рубрики: HAIRPIN RESONATORS
BANDPASS FILTER
WIDE-STOPBAND
100 DB
MICROWAVE
FEATURES
DESIGN
Аннотация: A miniature bandpass filter of new design with original stripline resonators on suspended substrate has been studied. The proposed filters of third to sixth order are distinguished for their high frequency-selective properties and mush smaller size in comparison to analogs. It is shown that a broad stopband extending above three-fold central bandpass frequency is determined by weak coupling of resonators at resonances of the second and third modes. A prototype sixth-order filter with a central frequency of 1 GHz, manufactured on a ceramic substrate with dielectric permittivity ε = 80, has contour dimensions of 36.6 × 4.8 × 0.5 mm3. Parametric synthesis of the filter, based on electrodynamic 3D model simulations, showed quite good agreement with the results of measurements.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Belyaev B. A., Serzhantov A. M., Leksikov An. A., Bal'va Y. F., Grushevskii E. O.
Заглавие : An ultra-wideband stripline bandpass filter with a noise suppression level of more than 100 dB
Коллективы : Ministry of Science and Higher Education of the Russian Federation [075-11-2019-078]
Место публикации : Tech. Phys. Lett. - 2020. - Vol. 46, Is. 8. - P.787-791. - ISSN 1063-7850, DOI 10.1134/S1063785020080179. - ISSN 1090-6533(eISSN)
Примечания : Cited References: 9. - This work was financially supported by the Ministry of Science and Higher Education of the Russian Federation in the implementation of the integrated project "Creation of a production of earth stations of advanced satellite communications systems to ensure the coherence of hard, northern and Arctic territory of Russian Federation," implemented with the participation of the Federal Research Center "Krasnoyarsk Science Center of the Siberian Branch of the Russian Academy of Sciences|" (agreement number 075-11-2019-078 dated 13.12.2019)
Аннотация: An ultra-wideband bandpass filter formed by cascading of a novel high-pass filter (HPF) and a low-pass filter (LPF) on suspended substrates with a two-sided pattern of strip conductor has been investigated. The high selectivity of the HPF is ensured by the transmission zeros near the passband, the number of which is equal to the filter order. A second-order HPF has been designed on a 0.5-mm-thick substrate with a permittivity of ε = 9.8 using the numerical electrodynamic analysis of a 3D model of the filter. The experimental HPF prototype has a cutoff frequency of fb = 0.25 GHz at a level of –3 dB and a passband that extends to 5 GHz. The ultra-wideband bandpass filter formed by cascading of the LPF and the designed HPF has a fractional bandwidth of Δf/f0 = 150% with a central frequency of f0 = 1 GHz. It has the broad and deep high-frequency stopband, which extends to a frequency of 7.8f0 at a suppression level of –100 dB.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gokhfeld D. M., Savitskaya N. E., Popkov S. I., Kuzmichev N. D., Vasyutin M. A., Balaev D. A.
Заглавие : Anisotropic magnetization of an NbN film
Место публикации : J. Exp. Theor. Phys. - 2022. - Vol. 134, Is. 6. - P.707-712. - ISSN 10637761 (ISSN), DOI 10.1134/S1063776122060097
Примечания : Cited References: 31. - We are grateful to I.V. Nemtsev for measurements on the scanning electron microscope, S.A. Skorobogatov for his help in magnetic measurements (scanning electron microscopy and magnetic measurements have been performed at the Krasnoyarsk Regional Collective Usage Center of the Federal Research Center “Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences”)
Аннотация: The structural and magnetic properties of a niobium nitride (NbN) film prepared by reactive sputtering onto a quartz substrate are investigated. It is shown using scanning electron microscopy that the film has a columnar structure with a diameter of crystallite columns of about 50 nm. The film magnetization loops are measured for the field orientation parallel and perpendicular to its surface. Based on the experimental data, the critical current densities of the film are estimated in both cases. For the field parallel to the film surface, the estimate is 6.5 × 104 A/cm2 at the liquid helium temperature. For the field perpendicular to the surface, the critical current density is close to the depairing current density (107 A/cm2). Analysis of the results based on different models of magnetic vortex pinning in superconductors shows that in the former case, pinning occurs at the boundaries of columns in the bulk of the sample, while in the latter case, it is determined by the influence of the surface barrier.
Смотреть статью,
Scopus
Найти похожие

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Tarasov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Bias-current and optically driven transport properties of the hybrid Fe/SiO 2/p-Si structures
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P.526-529. - ISBN 1012-0394, DOI 10.4028/www.scientific.net/SSP.190.526. - ISBN 9783037854365
Ключевые слова (''Своб.индексиров.''): hybrid structure--mis transition--photoelectric effect--schottky barrier--channel switching--comparative analysis--electron hole pairs--fe films--fe layer--ferromagnetic films--hybrid structure--optical effects--optical radiations--photogeneration--planar geometries--schottky barriers--semiconductor substrate--temperature variation--critical currents--interfaces (materials)--magnetic materials--photoelectricity--schottky barrier diodes--silicon--switching circuits--transport properties
Аннотация: Pronounced optical- and bias-current-sensitive features of the transport properties of a Fe/SiO 2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the MIS transition with a Schottky barrier near the interface between SiO 2 and p- Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and optical radiation. The mechanism of the optical effect is photogeneration of electron-hole pairs in the semiconductor substrate near its boundary with SiO 2 layer. В© (2012) Trans Tech Publications.
Scopus
Найти похожие

Вид документа : Однотомное издание
Шифр издания :
Автор(ы) : Kim P. D., Turpanov I. A., Stolyar S. V., Yushkov V. I., Khalyapin D. L.
Заглавие : Co/Pt multilayer structures on he crystal MgO and Si substrate as a media for perpendicular magnetic recording
Место публикации : The Physics of Metals and Metallography. - 2006. - Vol. 102, Suppl. 1. - P.S83-S85. - DOI 10.1134/S0031918X06140213
Примечания : Библиогр.: 6
Аннотация: In this work, the crystal structure and hysteretic magnetic properties of equiatomic single-crystal CoPt/MgO films prepared by magnetron sputtering and their modifications after heat treatment are studied. A perpendicular magnetic anisotropy is obtained in annealed films in a film thickness range of 2 d≤16 nm. The correlation between the magnitude of magnetocrystalline anisotropy constant of CoPt films and the order parameter of the L10 superstructure of these alloys is ascertained. The influence of the single-crystal MgO substrate on the structure and magnetic properties of the films of equiatomic CoPt alloys is also investigated.
Читать в сети ИФ,
Смотреть статью
Найти похожие

10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gritsenko C., Lepalovskij V., Volochaev M. N., Komanicky V., Gorkovenko A., Pazniak H., Gazda M., Andreev N., Rodionova V.
Заглавие : Complex study of magnetization reversal mechanisms of FeNi/FeMn bilayers depending on growth conditions
Место публикации : Nanomaterials. - 2022. - Vol. 12, Is. 7. - Ст.1178. - ISSN 20794991 (ISSN), DOI 10.3390/nano12071178
Примечания : Cited References: 44. - This work has been supported by the grant of the Slovak Research and Development Agency under the contract No APVV-20-0324. This work was in part financially supported by the Ministry of Science and Higher Education of the Russian Federation, Subject of the state task No. FEUZ-2020-0051
Аннотация: Magnetization reversal processes in the NiFe/FeMn exchange biased structures with various antiferromagnetic layer thicknesses (0–50 nm) and glass substrate temperatures (17–600 °C) during deposition were investigated in detail. Magnetic measurements were performed in the temperature range from 80 K up to 300 K. Hysteresis loop asymmetry was found at temperatures lower than 150 K for the samples with an antiferromagnetic layer thickness of more than 10 nm. The average grain size of FeMn was found to increase with the AFM layer increase, and to decrease with the substrate temperature increase. Hysteresis loop asymmetry was explained in terms of the exchange spring model in the antiferromagnetic layer.
Смотреть статью,
Scopus,
Читать в сети ИФ
Найти похожие

11.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Avramov P. V., Kuzubov A. A., Sakai, Seiji, Ohtomo, Manabu, Entani, Shiro, Matsumoto, Yoshihiro, Naramoto, Hiroshi, Eleseeva N. S.
Заглавие : Contact-induced spin polarization in graphene/h-BN/Ni nanocomposites
Место публикации : J. Appl. Phys.: American Institute of Physics, 2012. - Vol. 112, Is. 11. - Ст.114303. - P. - ISSN 0021-8979, DOI 10.1063/1.4767134
Примечания : Cited References: 47. - This work was supported by JAEA Research fellowship (P.V.A.). P.V.A. also acknowledges JAEA ASRC and Molecular Spintronics Group for hospitality and fruitful collaboration. The authors are grateful to the ICS SB RAS and SFU CC (Krasnoyarsk), ISC RAS and MSU CRC, (SKIF MSU "Chebyshev", Moscow) for computer resources. This work was partially supported by the RFBR grant 12-02-31417.
Предметные рубрики: HEXAGONAL BORON-NITRIDE
TRILAYER GRAPHENE
NI(111) SURFACE
GRAPHITE
APPROXIMATION
SPINTRONICS
DIFFRACTION
SIMULATION
SUBSTRATE
CARBON
Аннотация: Atomic and electronic structure of graphene/Ni(111), h-BN/Ni(111) and graphene/h-BN/Ni(111) nanocomposites with different numbers of graphene and h-BN layers and in different mutual arrangements of graphene/Ni and h-BN/Ni at the interfaces was studied using LDA/PBC/PW technique. Using the same technique corresponding graphene, h-BN and graphene/h-BN structures without the Ni plate were calculated for the sake of comparison. It was suggested that C-top:C-fcc and N-top:B-fcc configurations are energetically favorable for the graphene/Ni and h-BN/Ni interfaces, respectively. The Ni plate was found to induce a significant degree of spin polarization in graphene and h-BN through exchange interactions of the electronic states located on different fragments. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767134]
Смотреть статью,
Scopus,
WoS,
Читать в сети ИФ
Найти похожие

12.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Rasskazov I. L., Karpov S. V., Panasyuk G. Y., Markel V. A.
Заглавие : Controllable propagation of surface plasmon polaritons in chains of non-spherical nanoparticles on dielectric substrate
Коллективы : Electromagnetic and Light Scattering Conference
Место публикации : Electromagnetic & Light Scattering XV : abstracts. - Leipzig, 2015. - Ст.88
Материалы конференции
Найти похожие

13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Voronin A. S., Fadeev Y. V., Govorun I. V., Podshivalov I. V., Simunin M. M., Tambasov I. A., Karpova D. V., Smolyarova T. E., Lukyanenko A. V., Karacharov A. A., Nemtsev I. V., Khartov S. V.
Заглавие : Cu-Ag and Ni-Ag meshes based on cracked template as efficient transparent electromagnetic shielding coating with excellent mechanical performance
Коллективы : Russian Foundation for Basic Research projectRussian Foundation for Basic Research (RFBR) [18-38-00852]; Russian FederationRussian Federation [SP-2235.2019.1]
Место публикации : J. Mater. Sci. - 2021. - Vol. 56. Is. 26. - P.14741-14762. - ISSN 0022-2461, DOI 10.1007/s10853-021-06206-4. - ISSN 1573-4803(eISSN)
Примечания : Cited References: 79. - This work was supported by Russian Foundation for Basic Research project «mol_a» № 18-38-00852 and a scholarship from the President of the Russian Federation SP-2235.2019.1. The sputtering Ag seed mesh and physicochemical analysis of materials was carried out on the equipment of Krasnoyarsk Regional Center of Research Equipment of Federal Research Center «Krasnoyarsk Science Center SB RAS»
Предметные рубрики: COPPER NANOWIRES
METALLIC MESH
PLASTIC SUBSTRATE
ELECTRODES
FILMS
Аннотация: Nowadays, the technical advances call for efficient electromagnetic interference (EMI) shielding of transparent devices which may be subject to data theft. We developed Cu–Ag and Ni–Ag meshes on flexible PET substrate for highly efficiency transparent EMI shielding coating. Cu–Ag and Ni–Ag meshes obtained with galvanic deposition of copper and nickel on thin Ag seed mesh which was made by cracked template method. Coefficients S11, S21 and shielding efficiency (SE) were measured for Cu–Ag and Ni–Ag meshes in X-band (8–12 GHz) and K-band (18–26.5 GHz). 90 s copper deposition increase SE from 23.2 to 43.7 dB at 8 GHz with a transparency of 82.2% and a sheet resistance of 0.25 Ω/sq. The achieved maximum SE was 47.6 dB for Cu–Ag mesh with 67.8% transparency and 41.1 dB for Ni–Ag mesh with 77.8% transparency. Cu–Ag and Ni–Ag meshes have high bending and long-term stability. Minimum bend radius is lower than 100 µm. This effect allows to produce different forms of transparent shielding objects, for example, origami method. Our coatings are the leading among all literary solutions in three-dimensional coordinates: of sheet resistance–optical transmittance–cost of produced.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

14.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gunyakov V. A., Parshin A. M., Khrustalev B. P., Shabanov V. F.
Заглавие : Determination of anchoring energy for nematic onto ferroelectric substrate
Место публикации : Solid State Commun.: PERGAMON-ELSEVIER SCIENCE LTD, 1993. - Vol. 87, Is. 9. - P.751-753. - ISSN 0038-1098, DOI 10.1016/0038-1098(93)90406-D
Примечания : Cited References: 8
Предметные рубрики: LIQUID-CRYSTALS
SURFACE
Аннотация: A technique to determine anchoring energy of planar MBBA layer with cleavage surfaces of triglycine sulphate is presented. The method is based on guest-host phenomenon in impure nematic. The anchoring energy W = (1.0 +/- 0.3).10(-4) erg/cm2 is calculated within Rapini-Papoular approximation.
WOS,
Scopus
Найти похожие

15.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Izotov A. V., Belyaev B. A.
Заглавие : Determination of magnetic anisotropies and miscut angles in epitaxial thin films on vicinal (111) substrate by the ferromagnetic resonance
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.O5.2. - P.250. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : References: 1
Ключевые слова (''Своб.индексиров.''): ferromagnetic resonance, , --magnetic anisotropy--vicinal (111) surface
Найти похожие

16.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Belyaev B. A., Izotov A. V., Solovev P. N., Yakovlev I. A.
Заглавие : Determination of magnetic anisotropies and miscut angles in epitaxial thin films on vicinal (111) substrate by the ferromagnetic resonance
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН , Ministry of Education and Science of the Russian Federation [3.528.2014K]
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P.181-184. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2016.12.081. - ISSN 1873-4766(eISSN)
Примечания : Cited References:16. - This work was supported by the Ministry of Education and Science of the Russian Federation, Task no. 3.528.2014K.
Предметные рубрики: SURFACE
SPECTROMETER
SPINTRONICS
Ключевые слова (''Своб.индексиров.''): thin film--ferromagnetic resonance--magnetic anisotropy--vicinal (111)--surface--iron silicide
Аннотация: A method for determining magnetic anisotropy parameters of a thin single-crystal film on vicinal (111) substrate as well as substrate miscut angles from angular dependence of ferromagnetic resonance field has been proposed. The method is based on the following: (i) a new approach for the solution of the system of nonlinear equations for equilibrium and resonance conditions; (ii) a new expression of the objective function for the fitting problem. The study of the iron silicide films grown on vicinal Si(111) substrates with different miscut angles confirmed the efficiency of the method. The proposed method can be easily generalized to determine parameters of single-crystal films grown on substrates with an arbitrary cut.
Смотреть статью,
WOS,
Читать в сети ИФ
Найти похожие

17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Masyugin A. N., Sitnikov M. N., Ishibashi T.
Заглавие : Effect of a Substrate on the Magnetoelectric Effect in Rare-Earth-Doped Bismuth Iron Garnet
Место публикации : JETP Letters. - 2019. - Vol. 110, Is. 3. - P.223-230. - ISSN 00213640 (ISSN), DOI 10.1134/S0021364019150074
Примечания : Cited References: 29. - This work was supported jointly by the Russian Foundation for Basic Research, the Government of the Krasnoyarsk Territory, and the Krasnoyarsk Science Foundation (project no. 18-42-240001 “Temperature-Induced Reversal of the Sign of Magnetoelectric Tensor Components in Neodymium-Doped Bismuth Iron Garnet”), as well as in part by the Russian Foundation for Basic Research (project nos. 18-32-00079_mol_a and 18-52-00009_bel_a) and by the Russian Ministry of Science and Higher Education (state contract no. 3.5743.2017/6.7).
Аннотация: The mechanism of relaxation of the electric polarization in thin films of rare-earth-doped bismuth iron garnet on glass and gallium gadolinium garnet substrates is determined in magnetic fields of 0 and 12 kOe in the temperature range of 80–380 K. The change in the sign of the residual electric polarization after switching off the electric field and the magnetic-field-induced shift of the hysteresis loop in the applied magnetic field are found. Linear and quadratic magnetoelectric effects with the tensor components depending on the substrate type are observed. The linear magnetoelectric effect is related to the spin–orbit coupling of electrons at the film–substrate interface, whereas the quadratic one is determined by the exchange–striction mechanism.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

18.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Myagkov V. G., Ivanenko A. A., Bykova L. E., Yozhikova E. V., Maksimov I. A., Ivanov V. V.
Заглавие : Effect of exposure to optical radiation and temperature on the electrical and optical properties of In2O3 films produced by autowave oxidation
Коллективы : Ministry of Education and Science of the Russian Federation [14.513.11.0023]
Место публикации : Semiconductors: MAIK Nauka-Interperiodica / Springer, 2014. - Vol. 48, Is. 2. - P.207-211. - ISSN 1063-7826, DOI 10.1134/S1063782614020286. - ISSN 1090-6479
Примечания : Cited References: 42. - This study was supported by the Ministry of Education and Science of the Russian Federation, Federal Targeted Program "Research and Development in Priority Fields of Development of the Science and Technology Complex of Russia for 2007-2013", state contract no. 14.513.11.0023.
Предметные рубрики: GAS SENSOR RESPONSE
INDIUM OXIDE-FILMS
THIN-FILMS
HIGH-PERFORMANCE
TIN OXIDE
TRANSPARENT CONDUCTORS
SUBSTRATE-TEMPERATURE
ROOM-TEMPERATURE
TRANSISTORS
PHOTOREDUCTION
Аннотация: Indium-oxide films are synthesized by the autowave-oxidation reaction. It is shown that, upon exposure to optical radiation, the resistance of the films sharply decreases and the maximal relative change in the resistance is 52% at room temperature. Two resistance relaxation rates after termination of the irradiation, 15 Omega s(-1) during the first 30 s and 7 Omega s(-1) over the remaining time, are determined. The data of infrared spectroscopy of the films show that exposure to optical radiation induces a 2.4% decrease in the transmittance at a wavelength of 6.3 mu m. It is found that, after termination of the irradiation, the transmittance gradually increases with a rate of 0.006% s(-1). It is suggested that photoreduction is the dominant mechanism responsible for changes in the electrical and optical properties of the In2O3 films.
Смотреть статью,
Scopus,
WoS,
Читать в сети ИФ
Найти похожие

19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Belyaev B. A., Izotov A. V., Skomorokhov G. V., Solovev P. N.
Заглавие : Experimental study of the magnetic characteristics of nanocrystalline thin films: the role of edge effects
Коллективы : RFBRRussian Foundation for Basic Research (RFBR) [18-32-00086]; Ministry of Science and Higher Education of the Russian Federation [3.1031.2017/PCh]
Место публикации : Mater. Res. Express. - 2019. - Vol. 6, Is. 11. - Ст.116105. - ISSN 2053-1591, DOI 10.1088/2053-1591/ab4456
Примечания : Cited References: 37. - This work was supported by RFBR according to the research project no. 18-32-00086 and by the Ministry of Science and Higher Education of the Russian Federation no. 3.1031.2017/PCh.
Предметные рубрики: FERROMAGNETIC-RESONANCE
ANISOTROPIES
ROUGHNESS
SUBSTRATE
Аннотация: Magnetic characteristics and their spatial distribution of magnetron sputtered nanocrystalline NiFe thin films of various compositions were investigated by ferromagnetic resonance (FMR) and magneto-optical Kerr effect microscopy. A sharp increase in the FMR line width and a strong deviation of the uniaxial magnetic anisotropy field were observed near the film edges. It was shown that the observed magnetic anisotropy behavior can be explained by assuming that besides the field-induced uniaxial magnetic anisotropy an additional source of the uniaxial anisotropy near the film edges exists, with the easy axis parallel to the edges. The possible origins of this additional contribution were discussed.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

20.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Belyaev B. A., Balva Y. F., Leksikov An. A., Serzhantov A. M., Khodenkov S. A., Shumilov T. Y.
Заглавие : Features of characteristics of second-order bandpass filters based on half-wave and quarter-wave microstrip resonators
Место публикации : Russ. Phys. J. - 2022. - Vol. 65, Is. 2. - P.276-286. - ISSN 10648887 (ISSN), DOI 10.1007/s11182-022-02633-1
Примечания : Cited References: 37
Аннотация: A comparison is made of the characteristics of bandpass filters consisting of two interacting resonators, which are either half-wave or quarter-wave segments of microstrip transmission lines with the same widths of strip conductors. Plates with a thickness of 0.5 mm made of TBNS high-frequency ceramics with a relative permittivity ε = 80 were used as substrates for microstrip structures. The structures having a maximum coupling region of the resonators and the maximum value of their coupling to external ports with a wave impedance of 50 Ω were studied. The filters were tuned by selecting the gap between the strip conductors so that the maximum reflection level in the passband was equal to –20 dB. Electromagnetic simulation of 3D models showed that the fractional bandwidth of filters based on quarter-wave resonators is almost 2 times wider than the bandwidth of filters based on half-wave resonators, and this fact is confirmed by the measurement results. The discovered effect is explained by twice the characteristic impedance of a quarter-wave resonator relative to a half-wave one.
Смотреть статью,
Scopus
Найти похожие