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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gluck M., Kolovsky A. R., Korsch H. J., Zimmer F.
Заглавие : Wannier-Stark resonances in semiconductor superlattices
Место публикации : Phys. Rev. B: AMERICAN PHYSICAL SOC, 2002. - Vol. 65, Is. 11. - Ст.115302. - ISSN 1098-0121, DOI 10.1103/PhysRevB.65.115302
Примечания : Cited References: 22
Предметные рубрики: ELECTRIC-FIELD
STATES
LADDERS
BREAKDOWN
BLOCH
LOCALIZATION
Аннотация: Wannier-Stark states for semiconductor superlattices in strong static fields, where the interband Landau-Zener tunneling cannot be neglected, are rigorously calculated. The lifetime of these metastable states was found to show multiscale oscillations as a function of the static field, which is explained by an interaction with above-barrier resonances. An equation, expressing the absorption spectrum of semiconductor superlattices in terms of the resonance Wannier-Stark states, is obtained and used to calculate the absorption spectrum in the region of high static fields.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Magnetic-field-driven electron transport in ferromagnetic/ insulator/ semiconductor hybrid structures
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН , Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-242036, 16-42-243046]; Russian Ministry of Education and Science [16.663.2014K]
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P.140-143. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2016.12.092. - ISSN 1873-4766(eISSN)
Примечания : Cited References:27. - This study was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund, Project nos. 16-42-242036 and 16-42-243046, the Russian Ministry of Education and Science, state assignment no. 16.663.2014K.
Предметные рубрики: SPINTRONICS
BREAKDOWN
SILICON
SPIN
Ключевые слова (''Своб.индексиров.''): hybrid structures--magnetoresistance--magnetoimpedance--photovoltage
Аннотация: Extremely large magnetotransport phenomena were found in the simple devices fabricated on base of the Me/SiO2/p-Si hybrid structures (where Me are Mn and Fe). These effects include gigantic magnetoimpedance (MI), dc magnetoresistance (MR) and the lateral magneto-photo-voltaic effect (LMPE). The MI and MR values exceed 10(6)% in magnetic field about 0.2 T for Mn/SiO2/p-Si Schottky diode. LMPE observed in Fe/SiO2/p-Si lateral device reaches the value of 10(4)% in a field of 1 T. We believe that in case with the Schottky diode MR and MI effects are originate from magnetic field influence on impact ionization process by two different ways. First, the trajectory of the electron is deflected by a magnetic field, which suppresses acquisition of kinetic energy and therefore impact ionization. Second, the magnetic field gives rise to shift of the acceptor energy levels in silicon to a higher energy. As a result, the activation energy for impact ionization significantly increases and consequently threshold voltage rises. Moreover, the second mechanism (acceptor level energy shifting in magnetic field) can be responsible for giant LMPE.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Ignatchenko V. A., Polukhin D. S.
Заглавие : Fine structure of the crossing resonance spectrum of wavefields in an inhomogeneous medium
Место публикации : J. Exp. Theor. Phys. - 2020. - Vol. 130, Is. 3. - P.358-369. - ISSN 1063-7761, DOI 10.1134/S1063776120010033. - ISSN 1090-6509(eISSN)
Примечания : Cited References: 37
Предметные рубрики: SUPERCONDUCTING CRITICAL-TEMPERATURE
ELECTRON
BREAKDOWN
SPIN
Аннотация: The crossing resonance of two wavefields m(x, t) and u(x, t) of different natures in an inhomogeneous medium with zero mean value of the coupling parameter η between fields has been studied. The stages of formation of the fine structure of the crossing resonance have been analyzed. It has been shown within the model of independent crystallites that the removal of the degeneracy of eigenfrequencies of these fields at the crossing resonance point has a threshold character in the coupling parameter and occurs under the condition η ηc, where ηc = |Γu – Γm|/2, Γu and Γm are the relaxation parameters of the corresponding wavefields. At η ηc, each random implementation of the Green’s functions G~′′mm and G~′′uu of wavefields has the form of two resonance peaks with the same half-width (Γu + Γm)/2 spaced by the interval 2η; this form is standard for crossing resonances. At η ηc, the functions G~′′mm and G~′′uu are different: if Γu Γm, the function G~′′mm has the form of a narrow resonance peak at ω = ωr, whereas the function G~′′uu has the form of a broader resonance peak split at the top by a narrow antiresonance. Averaging over regions where η ηc leads to the formation of a broad resonance with a resonance line half-width of about η2〉1/2 on the both averaged Green’s functions, which is due to the stochastic distribution of resonance frequencies. Averaging over regions where η ηc results in the sharpening of a resonance peak on the function G′′mm and an antiresonance peak on the function G′′uu at the same frequency ω vu at the first and second crossing points, respectively.
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