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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Tarasov I. A., Yakovlev I. A., Rautskii M. V., Bondarev I. A., Lukyanenko A. V., Platunov M. S., Volochaev M. N., Efimov, Dmitriy D., Goikhman, Aleksandr Yu., Belyaev B. A., Baron F. A., Shanidze, Lev V., Farle M., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Asymmetric interfaces in epitaxial off-stoichiometric Fe3+xSi1-x/Ge/Fe3+xSi1-x hybrid structures: Effect on magnetic and electric transport properties
Коллективы : RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240012]; Government of the Russian Federation [075-15-2019-1886]; Ministry of Science and Higher Education of the Russian Federation [FZWN-2020-0008]
Место публикации : Nanomaterials. - 2022. - Vol. 12, Is. 1. - Ст.131. - ISSN 2079-4991(eISSN), DOI 10.3390/nano12010131
Примечания : Cited References: 61. - The research was funded by RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-243007, and by the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886). I.A.T. and S.N.V. thank RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-240012, for partial work related to the development of the simulation model of the pore autocorrelated radial distribution function coupled with the near coincidence site model, the Fe3+xSi1-x lattice distortion analysis, and processing Rutherford backscattering spectroscopy data. The Rutherford backscattering spectroscopy measurements were supported by the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008)
Предметные рубрики: FILMS
ANISOTROPY
SI(001)
DEVICES
SURFACE
GROWTH
Аннотация: Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 x 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Cherkasskii, Mikhail, Farle M., Semisalova, Anna
Заглавие : Dispersion relation of nutation surface spin waves in ferromagnets
Коллективы : Deutsche Forschungsgemeinschaft (DFG, German Research Foundation)German Research Foundation (DFG) [392402498 (SE 2853/1-1), 405553726 CRC/TRR 270]; government of the Russian Federation [075-15-2019-1886]
Место публикации : Phys. Rev. B. - 2021. - Vol. 103, Is. 17. - Ст.174435. - ISSN 2469-9950, DOI 10.1103/PhysRevB.103.174435. - ISSN 2469-9969(eISSN)
Примечания : Cited References: 45. - We acknowledge partial funding by Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) Project No. 392402498 (SE 2853/1-1) and Project No. 405553726 CRC/TRR 270, and by the government of the Russian Federation (Agreement No. 075-15-2019-1886). We thank J.-E. Wegrowe, U. Nowak, and R. Mondal for valuable comments and helpful discussions
Предметные рубрики: FILMS
PROPAGATION
SOLITONS
Аннотация: Inertia effects inmagnetization dynamics are theoretically shown to result in a different type of spin waves, i.e., nutation surface spin waves, which propagate at terahertz frequencies in in-plane magnetized ferromagnetic thin films. Considering the magnetostatic limit, i.e., neglecting exchange coupling, we calculate dispersion relation and group velocity, which we find to be slower than the velocity of conventional (precession) spin waves. In addition, we find that the nutation surface spin waves are backward spin waves. Furthermore, we show that inertia causes a decrease of the frequency of the precession spin waves, namely magnetostatic surface spin waves and backward volume magnetostatic spin waves. The magnitude of the decrease depends on the magnetic properties of the film and its geometry.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Voronin A. S., Fadeev Y. V., Govorun I. V., Podshivalov I. V., Simunin M. M., Tambasov I. A., Karpova D. V., Smolyarova T. E., Lukyanenko A. V., Karacharov A. A., Nemtsev I. V., Khartov S. V.
Заглавие : Cu-Ag and Ni-Ag meshes based on cracked template as efficient transparent electromagnetic shielding coating with excellent mechanical performance
Коллективы : Russian Foundation for Basic Research projectRussian Foundation for Basic Research (RFBR) [18-38-00852]; Russian FederationRussian Federation [SP-2235.2019.1]
Место публикации : J. Mater. Sci. - 2021. - Vol. 56. Is. 26. - P.14741-14762. - ISSN 0022-2461, DOI 10.1007/s10853-021-06206-4. - ISSN 1573-4803(eISSN)
Примечания : Cited References: 79. - This work was supported by Russian Foundation for Basic Research project «mol_a» № 18-38-00852 and a scholarship from the President of the Russian Federation SP-2235.2019.1. The sputtering Ag seed mesh and physicochemical analysis of materials was carried out on the equipment of Krasnoyarsk Regional Center of Research Equipment of Federal Research Center «Krasnoyarsk Science Center SB RAS»
Предметные рубрики: COPPER NANOWIRES
METALLIC MESH
PLASTIC SUBSTRATE
ELECTRODES
FILMS
Аннотация: Nowadays, the technical advances call for efficient electromagnetic interference (EMI) shielding of transparent devices which may be subject to data theft. We developed Cu–Ag and Ni–Ag meshes on flexible PET substrate for highly efficiency transparent EMI shielding coating. Cu–Ag and Ni–Ag meshes obtained with galvanic deposition of copper and nickel on thin Ag seed mesh which was made by cracked template method. Coefficients S11, S21 and shielding efficiency (SE) were measured for Cu–Ag and Ni–Ag meshes in X-band (8–12 GHz) and K-band (18–26.5 GHz). 90 s copper deposition increase SE from 23.2 to 43.7 dB at 8 GHz with a transparency of 82.2% and a sheet resistance of 0.25 Ω/sq. The achieved maximum SE was 47.6 dB for Cu–Ag mesh with 67.8% transparency and 41.1 dB for Ni–Ag mesh with 77.8% transparency. Cu–Ag and Ni–Ag meshes have high bending and long-term stability. Minimum bend radius is lower than 100 µm. This effect allows to produce different forms of transparent shielding objects, for example, origami method. Our coatings are the leading among all literary solutions in three-dimensional coordinates: of sheet resistance–optical transmittance–cost of produced.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Maximova O. A., Ovchinnikov S. G., Lyashchenko S. A.
Заглавие : Analytical calculation of dielectric permittivity tensor from magneto-optical ellipsometry measurements
Коллективы : Government of the Russian Federation [075-15-2019-1886]
Место публикации : J. Phys. A: IOP PUBLISHING LTD, 2021. - Vol. 54, Is. 29. - Ст.295201. - ISSN 1751-8113, DOI 10.1088/1751-8121/abfe72. - ISSN 1751-8121(eISSN)
Примечания : Cited References: 24. - This study was supported by the Government of the Russian Federation (Agreement No. 075-15-2019-1886)
Предметные рубрики: FILMS
Аннотация: Magneto-optical ellipsometry combines ellipsometry and magneto-optical Kerr effect measurements which are two powerful techniques. The main difficulty is usually in data processing as a number of parameters should be extracted from measured ellipsometric (ψ, Δ) and magneto-ellipsometric (δψ, δΔ) parameters. Standard procedure of solving magneto-ellipsometry equations involves numerical calculations. In this paper we show that it is possible to find out all elements of dielectric permittivity tensor without numerical calculation methods. It means that the inverse problem of magneto-optical ellipsometry can be solved analytically in the case of expansion of magneto-ellipsometric parameters δψ and δΔ with respect to two small parameters. We present a full set of mathematical expressions that enable us to calculate complex refraction index and complex magneto-optical parameter of a sample from magneto-optical ellipsometry measurements, thereby obtaining diagonal and off-diagonal complex elements of dielectric permittivity tensor. This analytical approach can be used in case of the contribution from magnetism into reflection coefficients being small.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Vazhenina I. G., Iskhakov R. S., Milyaev M. A., Naumova L. I., Rautskii M. V.
Заглавие : Spin Wave Resonance in the [(Co0.88Fe0.12)/Cu]N Synthetic Antiferromagnet
Коллективы : Ministry of Science and Higher Education of the Russian Federation [AAAA-A18-118020290104-2]; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR) [20-42-660018]
Место публикации : Tech. Phys. Lett. - 2020. - Vol. 46, Is. 11. - P.1076-1079. - ISSN 1063-7850, DOI 10.1134/S1063785020110140. - ISSN 1090-6533(eISSN)
Примечания : Cited References: 19. - This study was carried out under a state order of the Ministry of Science and Higher Education of the Russian Federation (theme "Spin" no. AAAA-A18-118020290104-2) and supported in part by the Russian Foundation for Basic Research (project no. 20-42-660018)
Предметные рубрики: MAGNETIC-PROPERTIES
MAGNETORESISTANCE
SPECTRUM
FILMS
Аннотация: The [(Co0.88Fe0.12)/Cu]N synthetic antiferromagnet has been investigated by the spin wave resonance method over the entire range of angles of an external dc magnetic field to the film surface normal. The investigations have shown that the superlattice under study consists of two exchange-coupled magnetic subsystems, each manifested in the recorded spectra as a series of spin-wave modes. The dependence of the linear region of propagation of a standing spin-wave mode on the sample orientation in an external magnetic field has been established.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Ustinov V. V., Rinkevich A. B., Vazhenina I. G., Milyaev M. A.
Заглавие : Microwave giant magnetoresistance and ferromagnetic and spin-wave resonances in (CoFe)/Cu nanostructures
Коллективы : Russian Science FoundationRussian Science Foundation (RSF) [AAAA-A18-118020290104-2, AAAA-A19-119012990095-0]; [17-1201002]
Место публикации : J. Exp. Theor. Phys. - 2020. - Vol. 131, Is. 1. - P.139-148. - ISSN 1063-7761, DOI 10.1134/S1063776120070171. - ISSN 1090-6509(eISSN)
Примечания : Cited References: 51. - This work was performed in terms of project Spin no. AAAA-A18-118020290104-2 and project Function no. AAAA-A19-119012990095-0. Section 3 was supported by the Russian Science Foundation, project no. 17-1201002
Предметные рубрики: COFE/CU SUPERLATTICES
MAGNETIC MULTILAYERS
CO/CU MULTILAYERS
FILMS
Аннотация: The microwave phenomena that occur in magnetic multilayer (CoFe)/Cu nanostructures, which have a giant magnetoresistance, are studied. The transmission of waves through a nanostructure is used to investigate the microwave giant magnetoresistance effect. The changes in the transmission coefficient at frequencies of 29–38 GHz are found to exceed the relative magnetoresistance, which distinguishes the system under study from the nanostructures studied earlier. Ferromagnetic and spin-wave resonances are used to study the angular dependences of the microwave absorption spectra of a multilayer (CoFe/Cu)n nanostructure. The following parameters are determined: the critical angle that determines the boundaries of the ranges of excitation of uniform and nonuniform spin modes, the type of boundary conditions describing the pinning of spins on the outer nanostructure surfaces, and the surface anisotropy and exchange interaction constants.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Patrin G. S., Shiyan Ya. G., Patrin K. G., Furdyk V. P.
Заглавие : Magnetic resonance in [(CoP)soft/NiP/(CoP)hard/NiP]n multilayer magnetic springs
Коллективы : Russian Foundation for Basic Research [18-02-00161-a]
Место публикации : JETP Letters. - 2018. - Vol. 107, Is. 9. - P.544-548. - ISSN 0021-3640, DOI 10.1134/S0021364018090096. - ISSN 1090-6487(eISSN)
Примечания : Cited References: 19. - This study was supported by the Russian Foundation for Basic Research (project no. 18-02-00161-a).
Предметные рубрики: FILMS
Аннотация: The magnetic resonance properties of [(CoP)soft/NiP/(CoP)hard/NiP]n multilayer films with the properties of magnetic springs have been experimentally studied. It has been found that the deposition of a NiP nonmagnetic amorphous layer on a (CoP)soft magnetic layer induces the appearance of perpendicular interface anisotropy. The increase in the number of blocks n in the multilayer structure leads to the appearance of the third absorption peak, which is explained by the formation of a noncollinear three-sublattice magnetic structure.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Bondarev I. A., Rautskii M. V., Lukyanenko A. V., Tarasov I. A., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Room temperature spin accumulation effect in boron doped Si created by epitaxial Fe3Si/p-Si Schottky contact
Коллективы : Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-243046, 16-42-242036, 16-42-243060]
Место публикации : J. Surf. Ingestig. - 2018. - Vol. 12, Is. 4. - P.633-637. - ISSN 1027-4510, DOI 10.1134/S1027451018040171. - ISSN 1819-7094(eISSN)
Примечания : Cited References: 33. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project nos. 16-42-243046, 16-42-242036 and 16-42-243060.
Предметные рубрики: HYBRID STRUCTURES
CURRENT-VOLTAGE
FILMS
TRANSPORT
SILICON
Ключевые слова (''Своб.индексиров.''): spintronics--hybrid structures--schottky diode--hanle effect--spin--accumulation
Аннотация: To study spin-dependent transport phenomena in Fe3Si/p-Si structures we fabricated 3-terminal planar microdevices and metal/semiconductor diode using conventional photolithography and wet chemical etching. IaEuro'V curve of prepared diode demonstrates rectifying behavior, which indicates the presence of Schottky barrier in Fe3Si/p-Si interface. Calculated Schottky barrier height is 0.57 eV, which can provide necessary conditions for spin accumulation in p-Si. Indeed, in 3-terminal planar device with Fe3Si/p-Si Schottky contact Hanle effect was observed. By the analysis of Hanle curves spin lifetime spin diffusion length in p-Si were calculated, which are 145 ps and 405 nm, respectively (at T = 300 K). Spin lifetime strongly depends on temperature which can be related to the fact that spin-dependent transport in our device is realized via the surface states. This gives a perspective of creation of spintronic devices based on metal/semiconductor structure without need for forming tunnel or Schottky tunnel contact.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bartolome J., Badía-Romano L., Rubin J., Bartolome F., Varnakov S. N., Ovchinnikov S. G., Burgler D.E.
Заглавие : Magnetic properties, morphology and interfaces of (Fe/Si)n nanostructures
Коллективы : International Conference on Magnetism
Место публикации : J. Magn. Magn. Mater.: Elsevier, 2016. - Vol. 400. - P.271-275. - ISSN 03048853 (ISSN), DOI 10.1016/j.jmmm.2015.07.046
Примечания : Cited References: 43. - The financial support of the Spanish MINECOMAT2011-23791 and MAT2015-53921-R, Aragonese DGA-IMANAE34 (cofounded by Fondo Social Europeo) and European FEDER funds is acknowledged. Program of the President of the Russian Federation for the support of leading scientific schools (Scientific School 2886.2014.2), RFBR (Grant no. 13-02-01265), the Ministry of Education and Science of the Russian Federation (State contract no. 02.G25.31.0043 and State task no. 16.663.2014К)
Предметные рубрики: INTERLAYER EXCHANGE
Fe/Si(100) INTERFACE
SILICIDE FORMATION
ULTRAHIGH-VACUUM
FILMS
IRON
MAGNETORESISTANCE
SUPERLATTICES
SPECTROSCOPY
DEPOSITION
Аннотация: A systematic study of the iron–silicon interfaces formed upon preparation of (Fe/Si) multilayers has been performed by the combination of modern and powerful techniques. Samples were prepared by molecular beam epitaxy under ultrahigh vacuum onto Si wafers or single crystalline Ag(100) buffer layers grown on GaAs(100). The morphology of these films and their interfaces was studied by a combination of scanning transmission electron microscopy, X-ray reflectivity, angle resolved X-ray photoelectron spectroscopy and hard X-ray photoelectron spectroscopy. The Si-on-Fe interface thickness and roughness were determined to be 1.4(1) nm and 0.6(1) nm, respectively. Moreover, determination of the stable phases formed at both Fe-on-Si and Si-on-Fe interfaces was performed using conversion electron Mössbauer spectroscopy on multilayers with well separated Si-on-Fe and Fe-on-Si interfaces. It is shown that while a fraction of Fe remains as α-Fe, the rest has reacted with Si, forming the paramagnetic FeSi phase and a ferromagnetic Fe rich silicide. We conclude that there is an identical paramagnetic c-Fe1−xSi silicide sublayer in both Si-on-Fe and Fe-on-Si interfaces, whereas an asymmetry is revealed in the composition of the ferromagnetic silicide sublayer.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Babitskii A. N., Belyaev B. A., Boev N. M., Skomorokhov G. V., Izotov A. V., Galeev R. G.
Заглавие : A magnetometer of weak quasi-stationary and high-frequency fields on resonator microstrip transducers with thin magnetic fields
Место публикации : Instrum. Exp. Tech.: MAIK Nauka-Interperiodica / Springer, 2016. - Vol. 59, Is. 3. - P.425-432. - ISSN 00204412 (ISSN), DOI 10.1134/S0020441216030131
Примечания : Cited References: 23. - This study was performed within the framework of the State Job of the Ministry of Education and Science of the Russian Federation for the research at the Siberian Federal University in 2014 (project no. 3.528.2014K).
Предметные рубрики: Ferromagnetic-resonance
Films
Susceptibility
Anisotropy
Sensors
Trends
Аннотация: A high-sensitivity magnetometer for simultaneous measurements of three components of a weak quasi-stationary or high-frequency magnetic-field vector was developed and investigated. Microstrip structures that are based on irregular resonators serve as the magnetometer transducers. An anisotropic thin-film magnetic structure is used as the sensing element. This structure consists of two thin magnetic films that are prepared by magnetron sputtering of a Ni75Fe25 permalloy target and separated by a silicon monoxide layer. It is demonstrated that the transducer exhibits the maximum sensitivity, when the easy magnetization axis of the film structure is orthogonal to the polarization direction of the pumping microwave magnetic field in the microstrip resonator and at an optimal value of a constant magnetic bias field and its optimal deflection from the pumping-field polarization direction which is parallel to it. The magnetometer is characterized by a wide dynamic range of measured magnetic fields, 10–10–10–4 Т, and a wide frequency range, 10–1–105 Hz. © 2016, Pleiades Publishing, Inc.
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