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Quantum versus classical nature of the low-temperature magnetic phase transition in TbAl3(BO3)4 / T. Zajarniuk, A. Szewczyk, M. U. Gutowska [et al.] // Phys. Rev. B. - 2022. - Vol. 105, Is. 9. - Ст. 094418, DOI 10.1103/PhysRevB.105.094418. - Cited References: 26. - This work was supported partially by the National Science Centre (NCN) , Poland, under Project No. 2018/31/B/ST3/03289 . - ISSN 2469-9950. - ISSN 2469-9969

РУБ Materials Science, Multidisciplinary + Physics, Applied + Physics, Condensed
Рубрики:
GROWTH
FIELD
HEAT
Аннотация: Specific heat CB of a TbAl3(BO3)4 crystal was studied for 50 mK T 300 K with emphasis on T 1 K where a phase transition was found at Tc

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Держатели документа:
Polish Acad Sci, Inst Phys, Aleja Lotnikow 32-46, PL-02668 Warsaw, Poland.
Polish Acad Sci, Inst Low Temp & Struct Res, Ulica Okolna 2, PL-50422 Wroclaw, Poland.
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Natl Acad Sci Ukraine, B Verkin Inst Low Temp Phys & Engn, 47 Nauky Ave, UA-61103 Kharkiv, Ukraine.
Czech Acad Sci, Inst Phys, Cukrovarnicka 10, Prague 16200 6, Czech Republic.
Adam Mickiewicz Univ, Fac Phys, Uniwersytetu Poznanskiego 2, PL-61614 Poznan, Poland.

Доп.точки доступа:
Zajarniuk, T.; Szewczyk, A.; Gutowska, M. U.; Puzniak, R.; Szymczak, H.; Gudim, I. A.; Гудим, Ирина Анатольевна; Bedarev, V. A.; Pashchenko, M., I; Tomczak, P.; Szuszkiewicz, W.
}
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Asymmetric interfaces in epitaxial off-stoichiometric Fe3+xSi1-x/Ge/Fe3+xSi1-x hybrid structures: Effect on magnetic and electric transport properties / A. S. Tarasov, I. A. Tarasov, I. A. Yakovlev [et al.] // Nanomaterials. - 2022. - Vol. 12, Is. 1. - Ст. 131, DOI 10.3390/nano12010131. - Cited References: 61. - The research was funded by RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-243007, and by the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886). I.A.T. and S.N.V. thank RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-240012, for partial work related to the development of the simulation model of the pore autocorrelated radial distribution function coupled with the near coincidence site model, the Fe3+xSi1-x lattice distortion analysis, and processing Rutherford backscattering spectroscopy data. The Rutherford backscattering spectroscopy measurements were supported by the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008) . - ISSN 2079-4991

РУБ Chemistry, Multidisciplinary + Nanoscience & Nanotechnology + Materials Science, Multidisciplinary + Physics, Applied
Рубрики:
FILMS
   ANISOTROPY
   SI(001)
   DEVICES
   SURFACE
   GROWTH
Кл.слова (ненормированные):
iron silicide -- germanium -- molecular beam epitaxy -- epitaxial stress -- lattice distortion -- dislocation lattices -- FMR -- Rutherford backscattering -- spintronics
Аннотация: Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 < x < 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.

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Держатели документа:
RAS, Fed Res Ctr KSC SB, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia.
RAS, Fed Res Ctr KSC SB, Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia.
RAS, Boreskov Inst Catalysis SB, Synchrotron Radiat Facil SKIF, Nikolskiy Prospekt 1, Koltsov 630559, Russia.
Immanuel Kant Balt Fed Univ, REC Smart Mat & Biomed Applicat, Kaliningrad 236041, Russia.
Immanuel Kant Balt Fed Univ, REC Funct Nanomat, Kaliningrad 236016, Russia.
Univ Duisburg Essen, Fac Phys, D-47057 Duisburg, Germany.
Univ Duisburg Essen, Ctr Nanointegrat, D-47057 Duisburg, Germany.

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Bondarev, I. A.; Бондарев, Илья Александрович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Platunov, M. S.; Платунов, Михаил Сергеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Efimov, Dmitriy D.; Goikhman, Aleksandr Yu.; Belyaev, B. A.; Беляев, Борис Афанасьевич; Baron, F. A.; Барон, Филипп Алексеевич; Shanidze, Lev V.; Шанидзе, Лев Викторович; Farle, M.; Фарле, Михаель; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Volkov, N. V.; Волков, Никита Валентинович; RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240012]; Government of the Russian Federation [075-15-2019-1886]; Ministry of Science and Higher Education of the Russian Federation [FZWN-2020-0008]
}
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Solovev, P. N.
Numerical study of structural and magnetic properties of thin films obliquely deposited on rippled substrates / P. N. Solovev, A. V. Izotov, B. A. Belyaev // J. Phys.: Condens. Matter. - 2021. - Vol. 33, Is. 49. - Ст. 495802, DOI 10.1088/1361-648X/ac26fc. - Cited References: 35. - The reported study was funded by RFBR, the Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund and JSC 'NPP Radiosviaz', Project Number 20-42-242901 . - ISSN 0953-8984. - ISSN 1361-648X

РУБ Physics, Condensed Matter
Рубрики:
SIMULATION
ANISOTROPY
GROWTH
Кл.слова (ненормированные):
oblique deposition -- micromagnetic simulation -- thin film growth simulation -- rippled substrate -- magnetic anisotropy -- magnetization reversal
Аннотация: Structural modulation in thin films plays a substantial role in the formation of their magnetic properties. By producing topographic patterns in thin films, it is possible to engineer their magnetic response. Here, we report on the numerical study of the relationship between structural and static magnetic properties of thin films obliquely deposited on substrates with the sinusoidal surface. 3D Monte Carlo film growth simulations show that, under certain deposition conditions, an inhomogeneous columnar morphology can form in the films caused by the shadowing effect and the rippled substrate. Calculations of the demagnetizing tensors for these films demonstrate that their columnar structure is the source of the shape-induced uniaxial magnetic anisotropy that varies nonmonotonically with the deposition angle. Micromagnetic simulations of the generated films confirm the uniaxial character of the shape-induced anisotropy, and also show that magnetization reversal occurs via an incoherent rotation of magnetic moments.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, 50-38 Akademgorodok, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, 79 Svobodny Pr, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Izotov, A. V.; Изотов, Андрей Викторович; Belyaev, B. A.; Беляев, Борис Афанасьевич; Соловьев, Платон Николаевич; RFBRRussian Foundation for Basic Research (RFBR); Government of Krasnoyarsk Territory; Krasnoyarsk Regional Fund; JSC 'NPP Radiosviaz' [20-42-242901]
}
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    Cu-doped TiNxOy thin film resistors DC/RF performance and reliability / L. V. Shanidze, A. S. Tarasov, M. V. Rautskiy [et al.] // Appl. Sci. - 2021. - Vol. 11, Is. 16. - Ст. 7498, DOI 10.3390/app11167498. - Cited References: 13. - This research was funded by RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science, project code 20-42-240013 and by Grant of the Government of the Russian Federation for Creation ofWorld Tier Laboratories (contract No. 075-15-2019-1886) . - ISSN 2076-3417
   Перевод заглавия: Производительность и надежность тонкопленочных резисторов TiNxOy, легированных медью

РУБ Chemistry, Multidisciplinary + Engineering, Multidisciplinary + Materials Science, Multidisciplinary + Physics, Applied
Рубрики:
GROWTH
Кл.слова (ненормированные):
high-frequency passive components -- high power density -- thin film -- copper doped titanium oxynitride -- non-linear -- resistors -- heterogeneous integration
Аннотация: We fabricated Cu-doped TiNxOy thin film resistors by using atomic layer deposition, optical lithography, dry etching, Ti/Cu/Ti/Au e-beam evaporation and lift-off processes. The results of the measurements of the resistance temperature dependence, non-linearity, S-parameters at 0.01–26 GHz and details of the breakdown mechanism under high-voltage stress are reported. The devices’ sheet resistance is 220 ± 8 Ω/□ (480 ± 20 µΩ*cm); intrinsic resistance temperature coefficient (TCR) is ~400 ppm/°C in the T-range of 10–300 K; and S-parameters versus frequency are flat up to 2 GHz with maximum variation of 10% at 26 GHz. The resistors can sustain power and current densities up to ~5 kW*cm−2 and ~2 MA*cm−2, above which they switch to high-resistance state with the sheet resistance equal to ~200 kΩ/□ (~0.4 Ω*cm) caused by nitrogen and copper desorption from TiNxOy film. The Cu/Ti/TiNxOy contact is prone to ageing due to gradual titanium oxidation while the TiNxOy resistor body is stable. The resistors have strong potential for applications in high-frequency integrated and hybrid circuits that require small-footprint, medium-range resistors of 0.05–10 kΩ, with small TCR and high-power handling capability.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Dept Radio Elect, Krasnoyarsk 660041, Russia.
Reshetnev Siberian State Univ Sci & Technol, Inst Space Technol, Krasnoyarsk 660037, Russia.

Доп.точки доступа:
Shanidze, L. V.; Шанидзе, Лев Викторович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautskiy, M. V.; Рауцкий, Михаил Владимирович; Zelenov, F. V.; Konovalov, S. O.; Nemtsev, I. V.; Немцев, Иван Васильевич; Voloshin, A. S.; Волошин, Александр Сергеевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Baron, F. A.; Барон, Филипп Алексеевич; Volkov, N. V.; Волков, Никита Валентинович; RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-240013]; Government of the Russian Federation for Creation ofWorld Tier Laboratories [075-15-2019-1886]
}
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Synthesis, crystal structure, and thermodynamic properties of CuSm2Ge2O8 / L. T. Denisova, M. S. Molokeev, Y. F. Kargin [et al.] // Russ. J. Inorg. Chem. - 2021. - Vol. 66, Is. 12. - P. 1817-1821, DOI 10.1134/S0036023621120020. - Cited References: 30. - This work was carried out with partial financial support within the framework of the State assignment for science of the Siberian Federal University, project number FSRZ2020-0013 . - ISSN 0036-0236. - ISSN 1531-8613

РУБ Chemistry, Inorganic & Nuclear
Рубрики:
TEMPERATURE HEAT-CAPACITY
   CU-O
   PREDICTION
   GERMANATES
   GROWTH
Кл.слова (ненормированные):
copper samarium germanate -- crystal structure -- high-temperature heat capacity -- thermodynamic functions
Аннотация: Copper samarium germanate CuSm2Ge2O8 have been synthesized by the ceramic method from CuO, Sm2O3, and GeO2 in air at the final calcination temperature 1273 K (200 h), and its crystal structure has been determined (space group Cm; a = 9.7592(2) Å, b = 15.2608(4) Å, c = 8.2502(2) Å, β = 148.2566(8)°, V = 646.46(3) Å3). The temperature dependence of the molar heat capacity Cp = f(T) measured in the temperature range 350–1000 K shows a maximum at Tmax = 498.5 K caused by the phase transition. Thermodynamic properties have been calculated from experimental data.

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Публикация на русском языке Синтез, кристаллическая структура и термодинамические свойства CuSm2Ge2O8 [Текст] / Л. Т. Денисова, М. С. Молокеев, Ю. Ф. Каргин [и др.] // Журн. неорг. химии. - 2021. - Т. 66 № 12. - С. 1700-1705

Держатели документа:
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia.
Russian Acad Sci, Baikov Inst Met & Mat Sci, Moscow 119991, Russia.

Доп.точки доступа:
Denisova, L. T.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Kargin, Yu F.; Irtyugo, L. A.; Belousova, N., V; Denisov, V. M.; Siberian Federal University [FSRZ2020-0013]
}
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Electronic band structures of NdFe3(BO3)4 and NdGa3(BO3)4 crystals: ab initio calculations / S. Krylova, I. Gudim, A. Aleksandrovsky [et al.] // Ferroelectrics. - 2021. - Vol. 575, Is. 1. - P. 11-17, DOI 10.1080/00150193.2021.1888219. - Cited References: 27. - This work was supported by the Russian Foundation for Basic Research Grant No. 20-42-240009 . - ISSN 0015-0193. - ISSN 1563-5112

РУБ Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
HOFE3(BO3)4
   TEMPERATURE
   SPECTRA
   GROWTH
Кл.слова (ненормированные):
Borates -- ab initio calculation -- electronic bands -- crystal structure
Аннотация: NdFe3(BO3)4 and NdGa3(BO3)4 crystals are of great interest due to their physical properties. For example, NdFe3(BO3)4 crystal demonstrates magnetodielectric and magnetopiezoelectric effects, and NdGa3(BO3)4 crystal possesses luminescent and nonlinear optical properties. In this work, the properties of these materials are calculated by the plane-wave pseudo-potential method based on density functional theory. The structures of the crystals are optimized. The electronic structure of NdFe3(BO3)4 and NdGa3(BO3)4 are calculated.

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Держатели документа:
Kirensky Inst Phys FRC KSC SB RAS, Krasnoyarsk, Russia.
Siberian Fed Univ, Krasnoyarsk, Russia.

Доп.точки доступа:
Krylova, S. N.; Крылова, Светлана Николаевна; Gudim, I. A.; Гудим, Ирина Анатольевна; Aleksandrovsky, A. S.; Александровский, Александр Сергеевич; Vtyurin, A. N.; Втюрин, Александр Николаевич; Krylov, A. S.; Крылов, Александр Сергеевич; Russian Foundation for Basic Research GrantRussian Foundation for Basic Research (RFBR) [20-42-240009]
}
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Magneto-optical parameter Q for structures with uniaxial optical anisotropy / O. A. Maximova, S. A. Lyaschenko, S. N. Varnakov, S. G. Ovchinnikov // J. Exp. Theor. Phys. - 2021. - Vol. 133, Is. 5. - P. 581-590, DOI 10.1134/S1063776121110030. - Cited References: 42. - This study was supported by the Russian Science Foundation (project no. 21-12-00226) . - ISSN 1063-7761. - ISSN 1090-6509

РУБ Physics, Multidisciplinary
Рубрики:
THIN-FILMS
ELLIPSOMETRY
GROWTH
Аннотация: This paper is devoted to the development of reflection magneto-optical ellipsometry. We have solved the inverse problem for structures with uniaxial optical anisotropy: have determined the reflection coefficients for the ambient-sample interface, and have derived an analytic expression for magneto-optical parameter Q proportional to the magnetization. This expression makes it possible to determine parameter Q exclusively from experimental data obtained using magneto-optical ellipsometry. We present a detailed algorithm for performing experiment on determining the dielectric tensor in the transverse geometry.

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Публикация на русском языке Магнитооптический параметр Q для структур с одноосной оптической анизотропией [Текст] / О. А. Максимова, С. А. Лященко, С. Н. Варнаков, С. Г. Овчинников // Журн. эксперим. и теор. физ. - 2021. - Т. 160 Вып. 5. - С. 678-688

Держатели документа:
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Fed Res Ctr,Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Maximova, O. A.; Максимова, Ольга Александровна; Lyashchenko, S. A.; Лященко, Сергей Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Russian Science FoundationRussian Science Foundation (RSF) [21-12-00226]
}
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Temperature dependence of the spontaneous polarization, acoustic and strain anomalies in strontium barium niobate crystals of different chemical compositions probed by the second harmonic generation technique / A. M. Pugachev, I. V. Zaytseva, V. K. Malinovsky [et al.] // Ferroelectrics. - 2020. - Vol. 560, Is. 1. - P. 54-60, DOI 10.1080/00150193.2020.1722883. - Cited References: 19. - This work was supported by the Russian Foundation for Basic Research, projects no. 18-02-00399 and 19-42-543-016 and State assignment No AAAA-A17-117052410033-9. . - ISSN 0015-0193. - ISSN 1563-5112

РУБ Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
SINGLE-CRYSTALS
RELAXOR
GROWTH
Кл.слова (ненормированные):
SBN-x crystals -- polar regions -- ferroelectric phase transition -- second harmonic generation -- Brillouin spectroscopy
Аннотация: In SrxBa1-xNb2O6 crystals (x = 0.33, 0.5, 0.61, and 0.75), temperature dependences of spontaneous polarization, strain, elastic modules, and second harmonic generation (SHG) signal are compared. It is revealed that SHG describes the temperature dependences of dipole moments in polar nanoregions in paraelectric phase. In the vicinity of the phase transition in paraelectric phase, SHG reflects the temperature behavior of relatively large and long-lived polar asymmetric regions as indicated by the presence of the intermediate temperature range on the temperature dependence of this nonlinear response.

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Держатели документа:
Russian Acad Sci, Inst Automat & Electrometry, Novosibirsk, Russia.
Kirensky Inst Phys Fed Res Ctr KSC SB RAS, Krasnoyarsk, Russia.
Siberian Fed Univ, Inst Engn Phys & Radioelect, Krasnoyarsk, Russia.
Russian Acad Sci, Prokhorov Gen Phys Inst, Moscow, Russia.

Доп.точки доступа:
Pugachev, A. M.; Zaytseva, I., V; Malinovsky, V. K.; Surovtsev, N., V; Gorev, M. V.; Горев, Михаил Васильевич; Ivleva, L. I.; Lykov, P. A.; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR) [18-02-00399, 19-42-543-016, AAAA-A17-117052410033-9]
}
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Prediction of orientation relationships and interface structures between α-, β-, γ-FeSi2 and Si phases / M. A. Visotin, I. A. Tarasov, A. S. Fedorov [et al.] // Acta Crystallogr. B. - 2020. - Vol. 76. - P. 469-482, DOI 10.1107/S2052520620005727. - Cited References: 85. - The following funding is acknowledged: Russian Science Foundation (grant No. 16-13-00060-Pi). . - ISSN 2052-5206

РУБ Chemistry, Multidisciplinary + Crystallography
Рубрики:
THERMAL-EXPANSION
   BETA-FESI2 FILMS
   GROWTH
   SILICON
   DIFFRACTION
Кл.слова (ненормированные):
interface structure -- structure prediction -- orientation relationship -- near-coincidence site -- edge-to-edge matching -- iron silicide -- DFT calculations -- thermal expansion
Аннотация: A pure crystallogeometrical approach is proposed for predicting orientation relationships, habit planes and atomic structures of the interfaces between phases, which is applicable to systems of low-symmetry phases and epitaxial thin film growth. The suggested models are verified with the example of epitaxial growth of α-, γ- and β-FeSi2 silicide thin films on silicon substrates. The density of near-coincidence sites is shown to have a decisive role in the determination of epitaxial thin film orientation and explains the superior quality of β-FeSi2 thin grown on Si(111) over Si(001) substrates despite larger lattice misfits. Ideal conjunctions for interfaces between the silicide phases are predicted and this allows for utilization of a thin buffer α-FeSi2 layer for oriented growth of β-FeSi2 nanostructures on Si(001). The thermal expansion coefficients are obtained within quasi-harmonic approximation from the DFT calculations to study the influence of temperature on the lattice strains in the derived interfaces. Faster decrease of misfits at the α-FeSi2(001)||Si(001) interface compared to γ-FeSi2(001)||Si(001) elucidates the origins of temperature-driven change of the phase growing on silicon substrates. The proposed approach guides from bulk phase unit cells to the construction of the interface atomic structures and appears to be a powerful tool for the prediction of interfaces between arbitrary phases for subsequent theoretical investigation and epitaxial film synthesis.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Visotin, M. A.; Высотин, Максим Александрович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Fedorov, A. S.; Федоров, Александр Семенович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Russian Science FoundationRussian Science Foundation (RSF) [16-13-00060-Pi]
}
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10.

Altunin, R. R.
Effect of the structural properties on the electrical resistivity of the Al/Ag thin films during the solid-state reaction / R. R. Altunin, E. T. Moiseenko, S. M. Zharkov // Phys. Solid State. - 2020. - Vol. 62, Is. 4. - P. 708-713, DOI 10.1134/S1063783420040034. - Cited References: 43. - This study was supported by the Russian Science Foundation, project no. 18-13-00080. . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter
Рубрики:
LIGHT-EMITTING-DIODES
   PHASE-FORMATION
   AG
   AL
   DIFFUSION
   SUPPRESSION
   INTERFACE
   SURFACE
   GROWTH
   HEAT
Кл.слова (ненормированные):
thin films -- phase formation -- Al/Ag -- solid-state reaction; -- electron diffraction -- resistivity
Аннотация: Based on the results of in situ electron diffraction study of the solid-state reaction and electrical resistivity measurements on the Al/Ag thin films with an atomic ratio of Al : Ag = 1 : 3, the temperature of the reaction onset has been established and a model of the structural phase transitions has been proposed. The solid-state reaction begins at 70°C with the formation of the Al–Ag solid solution at the interface between the aluminum and silver nanolayers. It has been found that, in the course of the reaction, the intermetallic compounds γ-Ag2Al → μ-Ag3Al are successively formed. It is shown that the possibility of the formation of the μ‑Ag3Al phase during the solid-state reaction in the Al/Ag thin films depends on the aluminum-to-silver ratio, while the formation of the μ-Ag3Al phase begins only after all fcc aluminum has reacted.

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Публикация на русском языке Алтунин Р. Р. Влияние структурных свойств на электросопротивление тонких пленок Al/Ag в процессе твердофазной реакции [Текст] / Р. Р. Алтунин, Е. Т. Моисеенко, С. М. Жарков // Физ. тверд. тела. - 2020. - Т. 62 Вып. 4. - С. 621-626

Держатели документа:
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Moiseenko, E. T.; Zharkov, S. M.; Жарков, Сергей Михайлович; Russian Science FoundationRussian Science Foundation (RSF) [18-13-00080]
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