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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zajarniuk T., Szewczyk A., Gutowska M. U., Puzniak R., Szymczak H., Gudim I. A., Bedarev V. A., Pashchenko, M., I, Tomczak P., Szuszkiewicz W.
Заглавие : Quantum versus classical nature of the low-temperature magnetic phase transition in TbAl3(BO3)4
Место публикации : Phys. Rev. B. - 2022. - Vol. 105, Is. 9. - Ст.094418. - ISSN 2469-9950, DOI 10.1103/PhysRevB.105.094418. - ISSN 2469-9969(eISSN)
Примечания : Cited References: 26. - This work was supported partially by the National Science Centre (NCN) , Poland, under Project No. 2018/31/B/ST3/03289
Предметные рубрики: GROWTH
FIELD
HEAT
Аннотация: Specific heat CB of a TbAl3(BO3)4 crystal was studied for 50 mK T 300 K with emphasis on T 1 K where a phase transition was found at Tc
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Tarasov I. A., Yakovlev I. A., Rautskii M. V., Bondarev I. A., Lukyanenko A. V., Platunov M. S., Volochaev M. N., Efimov, Dmitriy D., Goikhman, Aleksandr Yu., Belyaev B. A., Baron F. A., Shanidze, Lev V., Farle M., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Asymmetric interfaces in epitaxial off-stoichiometric Fe3+xSi1-x/Ge/Fe3+xSi1-x hybrid structures: Effect on magnetic and electric transport properties
Коллективы : RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240012]; Government of the Russian Federation [075-15-2019-1886]; Ministry of Science and Higher Education of the Russian Federation [FZWN-2020-0008]
Место публикации : Nanomaterials. - 2022. - Vol. 12, Is. 1. - Ст.131. - ISSN 2079-4991(eISSN), DOI 10.3390/nano12010131
Примечания : Cited References: 61. - The research was funded by RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-243007, and by the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886). I.A.T. and S.N.V. thank RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-240012, for partial work related to the development of the simulation model of the pore autocorrelated radial distribution function coupled with the near coincidence site model, the Fe3+xSi1-x lattice distortion analysis, and processing Rutherford backscattering spectroscopy data. The Rutherford backscattering spectroscopy measurements were supported by the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008)
Предметные рубрики: FILMS
ANISOTROPY
SI(001)
DEVICES
SURFACE
GROWTH
Аннотация: Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 x 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Solovev P. N., Izotov A. V., Belyaev B. A.
Заглавие : Numerical study of structural and magnetic properties of thin films obliquely deposited on rippled substrates
Коллективы : RFBRRussian Foundation for Basic Research (RFBR); Government of Krasnoyarsk Territory; Krasnoyarsk Regional Fund; JSC 'NPP Radiosviaz' [20-42-242901]
Место публикации : J. Phys.: Condens. Matter. - 2021. - Vol. 33, Is. 49. - Ст.495802. - ISSN 0953-8984, DOI 10.1088/1361-648X/ac26fc. - ISSN 1361-648X(eISSN)
Примечания : Cited References: 35. - The reported study was funded by RFBR, the Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund and JSC 'NPP Radiosviaz', Project Number 20-42-242901
Предметные рубрики: SIMULATION
ANISOTROPY
GROWTH
Аннотация: Structural modulation in thin films plays a substantial role in the formation of their magnetic properties. By producing topographic patterns in thin films, it is possible to engineer their magnetic response. Here, we report on the numerical study of the relationship between structural and static magnetic properties of thin films obliquely deposited on substrates with the sinusoidal surface. 3D Monte Carlo film growth simulations show that, under certain deposition conditions, an inhomogeneous columnar morphology can form in the films caused by the shadowing effect and the rippled substrate. Calculations of the demagnetizing tensors for these films demonstrate that their columnar structure is the source of the shape-induced uniaxial magnetic anisotropy that varies nonmonotonically with the deposition angle. Micromagnetic simulations of the generated films confirm the uniaxial character of the shape-induced anisotropy, and also show that magnetization reversal occurs via an incoherent rotation of magnetic moments.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shanidze L. V., Tarasov A. S., Rautskiy M. V., Zelenov F. V., Konovalov S. O., Nemtsev I. V., Voloshin A. S., Tarasov I. A., Baron F. A., Volkov N. V.
Заглавие : Cu-doped TiNxOy thin film resistors DC/RF performance and reliability
Коллективы : RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-240013]; Government of the Russian Federation for Creation ofWorld Tier Laboratories [075-15-2019-1886]
Место публикации : Appl. Sci. - 2021. - Vol. 11, Is. 16. - Ст.7498. - ISSN 2076-3417(eISSN), DOI 10.3390/app11167498
Примечания : Cited References: 13. - This research was funded by RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science, project code 20-42-240013 and by Grant of the Government of the Russian Federation for Creation ofWorld Tier Laboratories (contract No. 075-15-2019-1886)
Предметные рубрики: GROWTH
Аннотация: We fabricated Cu-doped TiNxOy thin film resistors by using atomic layer deposition, optical lithography, dry etching, Ti/Cu/Ti/Au e-beam evaporation and lift-off processes. The results of the measurements of the resistance temperature dependence, non-linearity, S-parameters at 0.01–26 GHz and details of the breakdown mechanism under high-voltage stress are reported. The devices’ sheet resistance is 220 ± 8 Ω/□ (480 ± 20 µΩ*cm); intrinsic resistance temperature coefficient (TCR) is ~400 ppm/°C in the T-range of 10–300 K; and S-parameters versus frequency are flat up to 2 GHz with maximum variation of 10% at 26 GHz. The resistors can sustain power and current densities up to ~5 kW*cm−2 and ~2 MA*cm−2, above which they switch to high-resistance state with the sheet resistance equal to ~200 kΩ/□ (~0.4 Ω*cm) caused by nitrogen and copper desorption from TiNxOy film. The Cu/Ti/TiNxOy contact is prone to ageing due to gradual titanium oxidation while the TiNxOy resistor body is stable. The resistors have strong potential for applications in high-frequency integrated and hybrid circuits that require small-footprint, medium-range resistors of 0.05–10 kΩ, with small TCR and high-power handling capability.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Denisova L. T., Molokeev M. S., Kargin, Yu F., Irtyugo L. A., Belousova, N., V, Denisov V. M.
Заглавие : Synthesis, crystal structure, and thermodynamic properties of CuSm2Ge2O8
Коллективы : Siberian Federal University [FSRZ2020-0013]
Место публикации : Russ. J. Inorg. Chem. - 2021. - Vol. 66, Is. 12. - P.1817-1821. - ISSN 0036-0236, DOI 10.1134/S0036023621120020. - ISSN 1531-8613(eISSN)
Примечания : Cited References: 30. - This work was carried out with partial financial support within the framework of the State assignment for science of the Siberian Federal University, project number FSRZ2020-0013
Предметные рубрики: TEMPERATURE HEAT-CAPACITY
CU-O
PREDICTION
GERMANATES
GROWTH
Аннотация: Copper samarium germanate CuSm2Ge2O8 have been synthesized by the ceramic method from CuO, Sm2O3, and GeO2 in air at the final calcination temperature 1273 K (200 h), and its crystal structure has been determined (space group Cm; a = 9.7592(2) Å, b = 15.2608(4) Å, c = 8.2502(2) Å, β = 148.2566(8)°, V = 646.46(3) Å3). The temperature dependence of the molar heat capacity Cp = f(T) measured in the temperature range 350–1000 K shows a maximum at Tmax = 498.5 K caused by the phase transition. Thermodynamic properties have been calculated from experimental data.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Krylova S. N., Gudim I. A., Aleksandrovsky A. S., Vtyurin A. N., Krylov A. S.
Заглавие : Electronic band structures of NdFe3(BO3)4 and NdGa3(BO3)4 crystals: ab initio calculations
Коллективы : Russian Foundation for Basic Research GrantRussian Foundation for Basic Research (RFBR) [20-42-240009]
Место публикации : Ferroelectrics. - 2021. - Vol. 575, Is. 1. - P.11-17. - ISSN 0015-0193, DOI 10.1080/00150193.2021.1888219. - ISSN 1563-5112(eISSN)
Примечания : Cited References: 27. - This work was supported by the Russian Foundation for Basic Research Grant No. 20-42-240009
Предметные рубрики: HOFE3(BO3)4
TEMPERATURE
SPECTRA
GROWTH
Аннотация: NdFe3(BO3)4 and NdGa3(BO3)4 crystals are of great interest due to their physical properties. For example, NdFe3(BO3)4 crystal demonstrates magnetodielectric and magnetopiezoelectric effects, and NdGa3(BO3)4 crystal possesses luminescent and nonlinear optical properties. In this work, the properties of these materials are calculated by the plane-wave pseudo-potential method based on density functional theory. The structures of the crystals are optimized. The electronic structure of NdFe3(BO3)4 and NdGa3(BO3)4 are calculated.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Maximova O. A., Lyashchenko S. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Magneto-optical parameter Q for structures with uniaxial optical anisotropy
Коллективы : Russian Science FoundationRussian Science Foundation (RSF) [21-12-00226]
Место публикации : J. Exp. Theor. Phys. - 2021. - Vol. 133, Is. 5. - P.581-590. - ISSN 1063-7761, DOI 10.1134/S1063776121110030. - ISSN 1090-6509(eISSN)
Примечания : Cited References: 42. - This study was supported by the Russian Science Foundation (project no. 21-12-00226)
Предметные рубрики: THIN-FILMS
ELLIPSOMETRY
GROWTH
Аннотация: This paper is devoted to the development of reflection magneto-optical ellipsometry. We have solved the inverse problem for structures with uniaxial optical anisotropy: have determined the reflection coefficients for the ambient-sample interface, and have derived an analytic expression for magneto-optical parameter Q proportional to the magnetization. This expression makes it possible to determine parameter Q exclusively from experimental data obtained using magneto-optical ellipsometry. We present a detailed algorithm for performing experiment on determining the dielectric tensor in the transverse geometry.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Pugachev A. M., Zaytseva, I., V, Malinovsky V. K., Surovtsev, N., V, Gorev M. V., Ivleva L. I., Lykov P. A.
Заглавие : Temperature dependence of the spontaneous polarization, acoustic and strain anomalies in strontium barium niobate crystals of different chemical compositions probed by the second harmonic generation technique
Коллективы : Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR) [18-02-00399, 19-42-543-016, AAAA-A17-117052410033-9]
Место публикации : Ferroelectrics. - 2020. - Vol. 560, Is. 1. - P.54-60. - ISSN 0015-0193, DOI 10.1080/00150193.2020.1722883. - ISSN 1563-5112(eISSN)
Примечания : Cited References: 19. - This work was supported by the Russian Foundation for Basic Research, projects no. 18-02-00399 and 19-42-543-016 and State assignment No AAAA-A17-117052410033-9.
Предметные рубрики: SINGLE-CRYSTALS
RELAXOR
GROWTH
Аннотация: In SrxBa1-xNb2O6 crystals (x = 0.33, 0.5, 0.61, and 0.75), temperature dependences of spontaneous polarization, strain, elastic modules, and second harmonic generation (SHG) signal are compared. It is revealed that SHG describes the temperature dependences of dipole moments in polar nanoregions in paraelectric phase. In the vicinity of the phase transition in paraelectric phase, SHG reflects the temperature behavior of relatively large and long-lived polar asymmetric regions as indicated by the presence of the intermediate temperature range on the temperature dependence of this nonlinear response.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Visotin M. A., Tarasov I. A., Fedorov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Prediction of orientation relationships and interface structures between α-, β-, γ-FeSi2 and Si phases
Коллективы : Russian Science FoundationRussian Science Foundation (RSF) [16-13-00060-Pi]
Место публикации : Acta Crystallogr. B. - 2020. - Vol. 76. - P.469-482. - ISSN 2052-5206(eISSN), DOI 10.1107/S2052520620005727
Примечания : Cited References: 85. - The following funding is acknowledged: Russian Science Foundation (grant No. 16-13-00060-Pi).
Предметные рубрики: THERMAL-EXPANSION
BETA-FESI2 FILMS
GROWTH
SILICON
DIFFRACTION
Аннотация: A pure crystallogeometrical approach is proposed for predicting orientation relationships, habit planes and atomic structures of the interfaces between phases, which is applicable to systems of low-symmetry phases and epitaxial thin film growth. The suggested models are verified with the example of epitaxial growth of α-, γ- and β-FeSi2 silicide thin films on silicon substrates. The density of near-coincidence sites is shown to have a decisive role in the determination of epitaxial thin film orientation and explains the superior quality of β-FeSi2 thin grown on Si(111) over Si(001) substrates despite larger lattice misfits. Ideal conjunctions for interfaces between the silicide phases are predicted and this allows for utilization of a thin buffer α-FeSi2 layer for oriented growth of β-FeSi2 nanostructures on Si(001). The thermal expansion coefficients are obtained within quasi-harmonic approximation from the DFT calculations to study the influence of temperature on the lattice strains in the derived interfaces. Faster decrease of misfits at the α-FeSi2(001)||Si(001) interface compared to γ-FeSi2(001)||Si(001) elucidates the origins of temperature-driven change of the phase growing on silicon substrates. The proposed approach guides from bulk phase unit cells to the construction of the interface atomic structures and appears to be a powerful tool for the prediction of interfaces between arbitrary phases for subsequent theoretical investigation and epitaxial film synthesis.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Altunin R. R., Moiseenko E. T., Zharkov S. M.
Заглавие : Effect of the structural properties on the electrical resistivity of the Al/Ag thin films during the solid-state reaction
Коллективы : Russian Science FoundationRussian Science Foundation (RSF) [18-13-00080]
Место публикации : Phys. Solid State. - 2020. - Vol. 62, Is. 4. - P.708-713. - ISSN 1063-7834, DOI 10.1134/S1063783420040034. - ISSN 1090-6460(eISSN)
Примечания : Cited References: 43. - This study was supported by the Russian Science Foundation, project no. 18-13-00080.
Предметные рубрики: LIGHT-EMITTING-DIODES
PHASE-FORMATION
AG
AL
DIFFUSION
SUPPRESSION
INTERFACE
SURFACE
GROWTH
HEAT
Аннотация: Based on the results of in situ electron diffraction study of the solid-state reaction and electrical resistivity measurements on the Al/Ag thin films with an atomic ratio of Al : Ag = 1 : 3, the temperature of the reaction onset has been established and a model of the structural phase transitions has been proposed. The solid-state reaction begins at 70°C with the formation of the Al–Ag solid solution at the interface between the aluminum and silver nanolayers. It has been found that, in the course of the reaction, the intermetallic compounds γ-Ag2Al → μ-Ag3Al are successively formed. It is shown that the possibility of the formation of the μ‑Ag3Al phase during the solid-state reaction in the Al/Ag thin films depends on the aluminum-to-silver ratio, while the formation of the μ-Ag3Al phase begins only after all fcc aluminum has reacted.
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