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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov I. A., Rautskii M. V., Yakovlev I. A., Volochaev M. N.
Заглавие : Effect of epitaxial alignment on electron transport from quasi-two-dimensional iron silicide α-FeSi2 nanocrystals into p-Si(001)
Коллективы : International Symposium on Nanostructures - Physics and Technology , Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-243060, 16-42-243035]; Russian Foundation for Basic Research, Government of the Republic of Khakassia [17-42-190308]
Место публикации : Semiconductors. - 2018. - Vol. 52: 25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia), Is. 5. - P.654-659. - ISSN 1063-7826, DOI 10.1134/S1063782618050330. - ISSN 1090-6479(eISSN)
Примечания : Cited References:31. - The work was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects no. 16-42-243060 and 16-42-243035 and Russian Foundation for Basic Research, Government of the Republic of Khakassia, research project no. 17-42-190308. We also thank L.A. Solovyov for his assistance in XRD analysis.
Предметные рубрики: BETA-FESI2 THIN-FILMS
LOW-TEMPERATURE
GROWTH
FESI2
SI(100)
SI(111)
Аннотация: Self-assembled growth of α-FeSi2 nanocrystal ensembles on gold-activated and gold-free Si(001) surface by molecular beam epitaxy is reported. The microstructure and basic orientation relationship (OR) between the silicide nanocrystals and silicon substrate were analysed. The study reveals that utilisation of the gold as catalyst regulates the preferable OR of the nanocrystals with silicon and their habitus. It is shown that electron transport from α-FeSi2 phase into p-Si(001) can be tuned by the formation of (001)-or (111)-textured α-FeSi2 nanocrystals ensembles. A current-voltage characteristic of the structures with different preferable epitaxial alignment (α-FeSi2(001)/Si(100) and α-FeSi2(111)/Si(100)) shows good linearity at room temperature. However, it becomes non-linear at different temperatures for different ORs due to different Schottky barrier height governed by a particular epitaxial alignment of the α-FeSi2/p-Si interfaces.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zhigalov V. S., Frolov G. I., Kveglis L. I.
Заглавие : Nanocrystalline cobalt films prepared under ultrafast condensation conditions
Место публикации : Phys. Solid State: MAIK NAUKA/INTERPERIODICA/SPRINGER, 1998. - Vol. 40, Is. 11. - P1878-1883. - ISSN 1063-7834, DOI 10.1134/1.1130677
Примечания : Cited References: 12
Предметные рубрики: IRON FILMS
SUPERLATTICES
GROWTH
FE
CO
Аннотация: The magnetic and electrical properties and the temperature dependence of these properties of cobalt films prepared at high condensation rates (10(5)-10(6) Angstrom/s) are investigated. Incremented annealing reveals several nonequilibrium states of cobalt in transition from the as-prepared metastable structure to the ordinary hcp structure. The anomalies of the properties are analyzed from the standpoint of the nanocrystalline state of the samples. Model concepts of microcluster formations in the investigated films are also discussed. (C) 1998 American Institute of Physics. [S1063-7834(98)02411-3].
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Li L. A., Bykova L. E., Turpanov I. A., Kim P. D., Bondarenko G. V., Bondarenko G. N.
Заглавие : Self-propagating high-temperature synthesis in Pt/Co/MgO(001) epitaxial thin films
Место публикации : Phys. Solid State: AMER INST PHYSICS, 2000. - Vol. 42, Is. 5. - P968-972. - ISSN 1063-7834, DOI 10.1134/1.1131321
Примечания : Cited References: 26
Предметные рубрики: PERPENDICULAR MAGNETIC-ANISOTROPY
LAYERED STRUCTURES
CO/PT
MULTILAYERS
SUPERLATTICES
PTFE(001)
GROWTH
PD/CO
Аннотация: The self-propagating high-temperature synthesis in the two-layer and multilayer Pt / Co(001) thin films has been investigated. It is shown that the initiation of the synthesis occurs at temperatures of 770-820 K. After the synthesis in the two-layer film samples, the PtCo(001) disordered phase exhibits an epitaxial growth at the interface between cobalt and platinum layers. In the multilayer Pt/Co(001) thin films, the self-propagating high-temperature synthesis also brings about the formation of the PtCo(001) disordered phase on the MgO(001) surface. Further annealing at a temperature of 870 K for 4 h results in the transition of the PtCo(001) disordered phase to the ordered phase. Rapid thermal annealing of the Pt/Co(001) multilayer films at a temperature of 1000 K leads to the formation of the CoPt3 phase. The magnetic characteristics change in accord with the structural transformations in Pt/Co film samples. (C) 2000 MAIK "Nauka/Interperiodica".
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Popova M. N., Chukalina E. P., Erofeev D. S., Jablunovskis A., Gudim I. A., Malkin B. Z.
Заглавие : High-resolution optical spectroscopy and modeling of spectral and magnetic properties of multiferroic ErFe3(BO3)4
Коллективы : Russian Science FoundationRussian Science Foundation (RSF) [19-12-00413]
Место публикации : Phys. Rev. B. - 2020. - Vol. 101, Is. 20. - Ст.205108. - ISSN 2469-9950, DOI 10.1103/PhysRevB.101.205108. - ISSN 2469-9969(eISSN)
Примечания : Cited References: 38. - Financial support of the Russian Science Foundation under Grant No. 19-12-00413 is acknowledged.
Предметные рубрики: F-F TRANSITIONS
ENERGY-LEVELS
ER3+ IONS
GROWTH
Аннотация: We carried out the high-resolution broadband temperature-dependent polarized optical spectroscopy and theoretical studies of ErFe3(BO3)4 single crystals in the paramagnetic and antiferromagnetic (T˂TN=39K) phases. On the basis of the experimentally determined 45 crystal-field (CF) levels of Er3+ ions at sites with the C2 point symmetry, CF calculations were performed, a set of physically grounded CF parameters was obtained and used to model the temperature dependences of the Er magnetic moments measured in neutron-scattering experiments, as well as the magnetic susceptibility and magnetization of the compound; the contributions of the quasi-one-dimensional iron magnetic subsystem were calculated in the frame of the previously developed self-consistent four-particle cluster model. The modeling strongly supports an easy-plane collinear structure of iron magnetic moments and excludes earlier proposed additional magnetic phase.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Altunin R. R., Moiseenko E. T., Zharkov S. M.
Заглавие : Effect of the structural properties on the electrical resistivity of the Al/Ag thin films during the solid-state reaction
Коллективы : Russian Science FoundationRussian Science Foundation (RSF) [18-13-00080]
Место публикации : Phys. Solid State. - 2020. - Vol. 62, Is. 4. - P.708-713. - ISSN 1063-7834, DOI 10.1134/S1063783420040034. - ISSN 1090-6460(eISSN)
Примечания : Cited References: 43. - This study was supported by the Russian Science Foundation, project no. 18-13-00080.
Предметные рубрики: LIGHT-EMITTING-DIODES
PHASE-FORMATION
AG
AL
DIFFUSION
SUPPRESSION
INTERFACE
SURFACE
GROWTH
HEAT
Аннотация: Based on the results of in situ electron diffraction study of the solid-state reaction and electrical resistivity measurements on the Al/Ag thin films with an atomic ratio of Al : Ag = 1 : 3, the temperature of the reaction onset has been established and a model of the structural phase transitions has been proposed. The solid-state reaction begins at 70°C with the formation of the Al–Ag solid solution at the interface between the aluminum and silver nanolayers. It has been found that, in the course of the reaction, the intermetallic compounds γ-Ag2Al → μ-Ag3Al are successively formed. It is shown that the possibility of the formation of the μ‑Ag3Al phase during the solid-state reaction in the Al/Ag thin films depends on the aluminum-to-silver ratio, while the formation of the μ-Ag3Al phase begins only after all fcc aluminum has reacted.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Grossman V. G., Bazarov B. G., Stefanovich S. Y., Molokeev M. S., Bazarova J. G.
Заглавие : Synthesis, structure and properties of K2(1-x)Rb2xAl2B2O7 and Cs1.39Tl0.61Al2B2O7 borates as the basis for preparing new oxide materials
Коллективы : [0339-2016-0007]
Место публикации : Lett. Mater. - 2019. - Vol. 9, Is. 1. - P.86-90. - ISSN 2218-5046, DOI 10.22226/2410-3535-2019-1-86-90; Письма о материалах. - ISSN 2410-3535(eISSN)
Примечания : Cited References:22. - The research was carried out within the state assignment of FASO of Russia (Theme No 0339-2016-0007).
Предметные рубрики: OPTICAL-PROPERTIES
CRYSTAL-STRUCTURE
K2Al2B2O7
GROWTH
Аннотация: With the development of technology, the need for highly efficient functional materials is steadily increasing. Currently, borates attract the attention of researchers, as they are promising nonlinear materials. Potassium rubidium aluminum borate based on potassium aluminum borate (trigonal syngony, space group P321, Z = 3) was obtained by solid-phase synthesis. The individuality and purity of the borates were confirmed by X-ray diffraction. Analysis of differential scanning calorimetry and thermogravimetric method for K2(1‑x)Rb2xAl2B2O7 (x = 0.1– 0.8) was performed in the temperature range of 25–1075°С. Potassium rubidium borates decompose in the temperature range of 900 –1000°C. Differential scanning calorimetry, dielectric loss tangent, and second-harmonic generation data revealed phase transitions for K0.6Rb1.4Al2B2O7. A significant SHG effect was found at room temperature for K0.6Rb1.4Al2B2O7 (Q = 70). Then the SHG effect increases to Q = 85 at a temperature of 645°C and remains constant with a further increase in temperature. The new triple borate Cs1.39Tl0.61Al2B2O7 was synthesized by the solid-phase synthesis, and its crystallographic parameters were obtained by the Rietveld method. This borate crystallizes in the monoclinic space group P21 / c with the unit cell parameters: Z = 2, a = 6.6669(3) Å, b = 7.2991(3) Å , c = 9.3589(4) Å , β =116.6795(18)°, V = 406.94(3) Å 3. The structure can be considered to be built up from the nearly planar [Al2B2O10] rings, which are composed of two AlO4 tetrahedra and two BO3 triangles, connected, alternately to each other by corner-sharing.С развитием технологии потребность в высокоэффективных функциональных материалах растет. В настоящее время бораты привлекают внимание исследователей, поскольку они являются перспективными нелинейными материалами. Твердофазным синтезом получены бораты K2(1-x)Rb2xAl2B2O7 (x = 0.1–0.8) на основе калий-алюминиевого бората (тригональная сингония, пространственная группа P321, Z = 3). Индивидуальность и чистота боратов подтверждена рентгеновской дифракцией. Анализ дифференциально-сканирующей калориметрией и термогравиметрическим методом для K2(1-x)Rb2xAl2B2O7 (x = 0.1–0.8) был проведен в интервале температур 25–1075 ºС. Калий-рубидиевые бораты разлагаются в интервале температур 900–1000 °C. Дифференциальной сканирующей калориметрией, диэлектрическими измерениями и методом генерации второй оптической гармоники выявлены фазовые переходы для K0.6Rb1.4Al2B2O7. Значительный ГВГ-эффект был обнаружен при комнатной температуре для K0.6Rb1.4Al2B2O7 (Q = 70). Эффект генерации второй гармоники возрастает до Q = 85 при температуре 645 °C и остается постоянным при дальнейшем увеличении температуры. Новый тройной борат Cs1.39Tl0.61Al2B2O7 был синтезирован методом твердофазного синтеза, а его кристаллографические параметры были получены с помощью метода Ритвельда. Этот борат кристаллизуется в моноклинной пространственной группе P21/c с параметрами элементарной ячейки: Z = 2, a = 6.6669 (3) Å, b = 7.2991 (3) Å, c = 9.3589 (4) Å, β = 116.6795 (18)º, V = 406.94 (3) Å3. Структуру можно представить в виде почти плоских колец [Al2B2O10], которые состоят из двух тетраэдров AlO4 и двух BO3 треугольников, соединенных попеременно друг с другом посредством вершин.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gorev M. V., Flerov I. N., Bondarev V. S., Sciau P., Lehmann A. G.
Заглавие : Heat capacity of the PbFe1/2Ta1/2O3 perovskite-like compound
Разночтения заглавия :авие SCOPUS: Heat Capacity of the PbFe1/2Ta1/2O3 Perovskite-Like Compound
Место публикации : Phys. Solid State: AMER INST PHYSICS, 2004. - Vol. 46, Is. 3. - P521-525. - ISSN 1063-7834, DOI 10.1134/1.1687872
Примечания : Cited References: 26
Предметные рубрики: SINGLE-CRYSTALS
PBFE0.5TA0.5O3
FERROELECTRICS
DIFFRACTION
NIOBATE
GROWTH
Аннотация: The heat capacity C-p(T) of the complex perovskite PbFe1/2Ta1/2O3 has been studied using adiabatic calorimetry in the temperature range 150-370 K. Three diffuse anomalies in C-p(T) are found to exist at temperatures T-d approximate to 350 K, T-m approximate to 250-300 K, and T-c approximate to 205 K. The anomalous and the lattice contribution to the heat capacity are separated, and the change in the entropy is determined. The results of the study are discussed jointly with the data on the structure and physical properties of the compound. (C) 2004 MAIK "Nauka / Interperiodica".
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gavriliuk A. G., Kharlamova S. A., Lyubutin I. S., Troyan I. A., Ovchinnikov S. G., Potseluiko A. M., Eremets M. I., Boehler R.
Заглавие : Structural and electronic transitions in gadolinium iron borate GdFe3(BO3)(4) at high pressures
Место публикации : JETP Letters. - 2004. - Vol. 80, Is. 6. - P.426-432. - ISSN 0021-3640, DOI 10.1134/1.1830662
Примечания : Cited References: 20
Предметные рубрики: TRIGONAL GDFE3(BO3)(4)
RM(3)(BO3)(4) CRYSTALS
OPTICAL-SPECTRA
BAND-STRUCTURE
FEBO3
GROWTH
Аннотация: The optical properties and structure of gadolinium iron borate GdFe3(BO3)(4) crystals are studied at high pressures produced in diamond-anvil cells. X-ray diffraction data obtained at a pressure of 25.6 GPa reveal a first-order phase transition retaining the trigonal symmetry and increasing the unit cell volume by 8%. The equation of state is obtained and the compressibility of the crystal is estimated before and after the phase transition. The optical spectra reveal two electronic transitions at pressures similar to26 GPa and similar to43 GPa. Upon the first transition, the optical gap decreases jumpwise from 3.1 to similar to2.25 eV. Upon the second transition at P = 43 GPa, the optical gap deceases down to similar to0.7 eV, demonstrating a dielectric-semiconductor transition. By using the theoretical model developed for a FeBO3 crystal and taking into account some structural analogs of these materials, the anomalies of the high-pressure optical spectra are explained. (C) 2004 MAIK "Nauka/Interperiodica".
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kharlamova S. A., Ovchinnikov S. G., Balaev A. D., Thomas M. F., Lyubutin I. S., Gavriliuk A. G.
Заглавие : Spin reorientation effects in GdFe3(BO3)(4) induced by applied field and temperature
Разночтения заглавия :авие SCOPUS: Spin reorientation effects in GdFe3(BO3)4 induced by applied field and temperature
Место публикации : J. Exp. Theor. Phys.: AMER INST PHYSICS, 2005. - Vol. 101, Is. 6. - P1098-1105. - ISSN 1063-7761, DOI 10.1134/1.2163925
Примечания : Cited References: 14
Предметные рубрики: RM(3)(BO3)(4) CRYSTALS
GROWTH
Ключевые слова (''Своб.индексиров.''): antiferromagnetism--ground state--magnetic moments--magnetic properties--mossbauer spectroscopy--single crystals--temperature distribution--spin orientation--static magnetic measurements--gadolinium compounds
Аннотация: Magnetic properties of GdFe3(BO3)(4) single crystals were investigated by Fe-57-Mossbauer spectroscopy and static magnetic measurements. In the ground state, the GdFe3(BO3)(4) crystal is an easy-axis compensated antiferromagnet, but the easy axis of iron moments does not coincide with the crystal C-3 axis, deviating from it by about 20 degrees. The spontaneous and field-induced spin reorientation effects were observed and studied in detail. The specific directions of iron magnetic moments were determined for different temperatures and applied fields. Large values of the angle between the Fe3+ magnetic moments and the C-3 axis in the easy-axis phase and between Fe3+ moments and the a(2) axis in the easy-plane phase reveal the tilted antiferromagnetic structure. (c) 2005 Pleiades Publishing, Inc.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Bykova L. E., Bondarenko G. N., Zhigalov V. S., Pol'skii A. I., Myagkov F. V.
Заглавие : Solid-phase reactions, self-propagating high-temperature synthesis, and order-disorder phase transition in thin films
Место публикации : JETP Letters. - 2000. - Vol. 71, Is. 5. - P.183-186. - ISSN 0021-3640, DOI 10.1134/1.568310
Примечания : Cited References: 27
Предметные рубрики: GAN
GROWTH
TI
NI
Аннотация: The results of experimental studies of self-propagating high-temperature synthesis in double-layer Cu/Au thin-film systems are presented. It is shown that the synthesis initiation temperature for a Cu/Au film is determined by the order-disorder phase-transition temperature in the Cu-Au system. The order-disorder transition temperature for thin films is found to be lower than for the bulky samples. It is assumed that the temperatures of initiation of solid-phase reactions in thin films can be associated with the structural phase-transition temperatures. (C) 2000 MAIK "Nauka/Interperiodica".
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11.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Bykova L. E., Bondarenko G. N., Bondarenko G. V., Myagkov F. V.
Заглавие : Solid-phase reactions and the order-disorder phase transition in thin films
Место публикации : Tech. Phys.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2001. - Vol. 46, Is. 6. - P743-748. - ISSN 1063-7842, DOI 10.1134/1.1379645
Примечания : Cited References: 28
Предметные рубрики: HIGH-TEMPERATURE SYNTHESIS
ALLOY-FILMS
KINETICS
MULTILAYERS
SYSTEMS
GROWTH
Аннотация: A comparative analysis was carried out of the initiation temperatures of solid-phase reactions in bilayer solid films and the Kurnakov temperatures of the phases forming in the reaction products. It has been shown that in superstructures where ordering is usually observed, the Kurnakov temperature coincides with the initiation temperature of the solid-phase reactions if no other solid-phase structural transformation precedes the order-disorder phase transition in the state diagram. A rule was proposed by which pairs of films capable of entering into solid-phase reactions and their initiation temperatures can be determined. (C) 2001 MAIK "Nauka/Interperiodica".
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12.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Churilov G. N., Fedorov A. S., Novikov P. V.
Заглавие : Fullerene C-60 formation in partially ionized carbon vapor
Разночтения заглавия :авие SCOPUS: Fullerene C60 formation in partially ionized carbon vapor
Место публикации : JETP Letters. - 2002. - Vol. 76, Is. 8. - P.522-526. - ISSN 0021-3640, DOI 10.1134/1.1533779
Примечания : Cited References: 15
Предметные рубрики: TOTAL-ENERGY CALCULATIONS
WAVE BASIS-SET
CLUSTERS
GROWTH
Аннотация: The assembling rate of a fullerene C-60 molecule has been theoretically studied as a function of electron concentration and temperature in partially ionized carbon vapor. For C-60 formation via one or two intermediate stages of cluster collisions, it has been shown that there is a region of plasma parameters (the temperature and electron concentration) in which fullerene C-60 is formed more efficiently. The C-60 formation rate versus temperature and electron concentration relationships have been found to correlate with the trends in the collision cross-section of carbon clusters as functions of these parameters. (C) 2002 MAIK "Nauka/Interperiodica".
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13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zaitsev A. I., Zamkov A. V., Molokeev M. S., Cherepakhin A. V., Koroleva N. S.
Заглавие : Phase formation upon crystallization of SrO center dot 2B(2)O(3) glasses
Место публикации : Crystallogr. Rep. - NEW YORK: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2011. - Vol. 56, Is. 1. - С. 44-51. - JAN. - ISSN 1063-7745, DOI 10.1134/S1063774511010263
Примечания : Cited Reference Count: 21
Предметные рубрики: STRONTIUM TETRABORATE
LUMINESCENCE
SRB4O7
GROWTH
Ключевые слова (''Своб.индексиров.''): crystalline form--crystalline formation--crystalline phasis--glass surfaces--phase formations--thermal analysis--thermal stability--crystalline materials--crystallization--glass--thermoanalysis--thermodynamic stability--metastable phases
Аннотация: The crystallization of SrO center dot 2B(2)O(3) glasses has been studied. Four different crystalline formations were found to form simultaneously and independently on the glass surface: stable alpha-SrB4O7 crystals and metastable crystalline forms (beta-SrB4O7, Sr4B14O25, and spherulites (presumably, mixtures of crystalline phases)). The ranges of thermal stability of the newly formed metastable phases have been established using thermal analysis.
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14.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Tarasov I. A., Yakovlev I. A., Rautskii M. V., Bondarev I. A., Lukyanenko A. V., Platunov M. S., Volochaev M. N., Efimov, Dmitriy D., Goikhman, Aleksandr Yu., Belyaev B. A., Baron F. A., Shanidze, Lev V., Farle M., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Asymmetric interfaces in epitaxial off-stoichiometric Fe3+xSi1-x/Ge/Fe3+xSi1-x hybrid structures: Effect on magnetic and electric transport properties
Коллективы : RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240012]; Government of the Russian Federation [075-15-2019-1886]; Ministry of Science and Higher Education of the Russian Federation [FZWN-2020-0008]
Место публикации : Nanomaterials. - 2022. - Vol. 12, Is. 1. - Ст.131. - ISSN 2079-4991(eISSN), DOI 10.3390/nano12010131
Примечания : Cited References: 61. - The research was funded by RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-243007, and by the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886). I.A.T. and S.N.V. thank RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-240012, for partial work related to the development of the simulation model of the pore autocorrelated radial distribution function coupled with the near coincidence site model, the Fe3+xSi1-x lattice distortion analysis, and processing Rutherford backscattering spectroscopy data. The Rutherford backscattering spectroscopy measurements were supported by the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008)
Предметные рубрики: FILMS
ANISOTROPY
SI(001)
DEVICES
SURFACE
GROWTH
Аннотация: Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 x 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.
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15.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Maximova O. A., Lyashchenko S. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Magneto-optical parameter Q for structures with uniaxial optical anisotropy
Коллективы : Russian Science FoundationRussian Science Foundation (RSF) [21-12-00226]
Место публикации : J. Exp. Theor. Phys. - 2021. - Vol. 133, Is. 5. - P.581-590. - ISSN 1063-7761, DOI 10.1134/S1063776121110030. - ISSN 1090-6509(eISSN)
Примечания : Cited References: 42. - This study was supported by the Russian Science Foundation (project no. 21-12-00226)
Предметные рубрики: THIN-FILMS
ELLIPSOMETRY
GROWTH
Аннотация: This paper is devoted to the development of reflection magneto-optical ellipsometry. We have solved the inverse problem for structures with uniaxial optical anisotropy: have determined the reflection coefficients for the ambient-sample interface, and have derived an analytic expression for magneto-optical parameter Q proportional to the magnetization. This expression makes it possible to determine parameter Q exclusively from experimental data obtained using magneto-optical ellipsometry. We present a detailed algorithm for performing experiment on determining the dielectric tensor in the transverse geometry.
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16.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Sorokin P.B., Kvashnin D.G., Kvashnin A.G., Avramov P. V., Chernozatonskii L.A.
Заглавие : Theoretical study of elastic properties of SiC nanowires of different shapes
Место публикации : J. Nanosci. Nanotechnol. - 2010. - Vol. 10, Is. 8. - P.4992-4997. - ISSN 1533-4880, DOI 10.1166/jnn.2010.2424. - ISSN 1533-4899
Примечания : Cited Reference Count: 49. - Гранты: This work was partially supported by JSPS-RFBR collaborative grant 09-02-92107. The electronic structure calculations have been performed on the Joint Supercomputer Centre of the Russian Academy of Sciences. One of the authors (Pavel V. Avramov) acknowledges the encouragement of Professor K. Morokuma, research leader of Fukui Institute, Kyoto University and Dr. Alister Page for kind help and support. The geometry of all structures was visualized by ChemCraft software.SUP53/SUPФинансирующая организация: JSPS-RFBR [09-02-92107]; Fukui Institute, Kyoto University
Предметные рубрики: INITIO MOLECULAR-DYNAMICS
SILICON-CARBIDE
THERMAL-STABILITY
CARBON NANOTUBES
NANORODS
GROWTH
SURFACES
NANOCRYSTALS
POTENTIALS
CONSTANTS
Ключевые слова (''Своб.индексиров.''): silicon carbide--nanowires--elastic properties--dft--molecular mechanics--dft--elastic properties--molecular mechanics--nanowires--silicon carbide--atomic structure--cubic phasis--dft--effective size--elastic properties--sic nanowire--silicon carbide nanowires--theoretical study--wire geometries--young's modulus--crystal atomic structure--density functional theory--elastic moduli--elasticity--molecular mechanics--nanowires--wire--silicon carbide
Аннотация: The atomic structure and elastic properties of silicon carbide nanowires of different shapes and effective sizes were studied using density functional theory and classical molecular mechanics. Upon surface relaxation, surface reconstruction led to the splitting of the wire geometry, forming both hexagonal (surface) and cubic phases (bulk). The behavior of the pristine SiC wires under compression and stretching was studied and Young's moduli were obtained. For Y-shaped SiC nanowires the effective Young's moduli and behavior in inelastic regime were elucidated.
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17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Avramov P. V., Minami S., Morokuma K., Irle S., Chernozatonskii L.A.
Заглавие : Atomic Structure and Energetic Stability of Complex Chiral Silicon Nanowires
Место публикации : J. Phys. Chem. C. - 2010. - Vol. 114, Is. 35. - P.14692-14696. - SEP 9. - ISSN 1932-7447, DOI 10.1021/jp1016399
Примечания : Cited Reference Count: 36. - Гранты: This work was supported by a CREST (Core Research for Evolutional Science and Technology) grant in the Area of High Performance Computing for Multiscale and Multiphysics Phenomena from the Japan Science and Technology Agency (JST) and a collaborative RFBR-JSPS grant No. 09-02-92107-Phi. S.I. also acknowledges support by the Program for Improvement of Research Environment for Young Researchers from Special Coordination Funds for Promoting Science and Technology (SCF) commissioned by the Ministry of Education, Culture, Sports, Science, and Technology (MEXT) of Japan. L.Ch. acknowledges support by the Presidium of Russian Academy of Sciences (Program No. 27).Финансирующая организация: CREST (Core Research for Evolutional Science and Technology); Japan Science and Technology Agency (JST); RFBR-JSPS [09-02-92107]; Special Coordination Funds for Promoting Science and Technology (SCF); Presidium of Russian Academy of Sciences [27]
Предметные рубрики: DENSITY-FUNCTIONAL METHODS
GROWTH
EXCHANGE
NANOHELICES
NANOSPRINGS
Ключевые слова (''Своб.индексиров.''): ab initio--atomic structure--chiral complexes--consecutive shifts--dft method--energetic stability--homo-lumo gaps--metastable structures--potential barriers--si atoms--silicon nanowires--unit cell parameters--atoms--chirality--electronic structure--enantiomers--metastable phases--nanowires--stereochemistry--wire--crystal atomic structure
Аннотация: Atomic and electronic structure and energetic stability of newly proposed pentagonal and hexagonal chiral complex silicon nanowires (NWs) composed of five or six (I 10) oriented crystalline fragments were studied using the ab initio DFT method. The chirality of the wires was caused by consecutive shifts of each fragment by 1/5 or 1/6 of the wire unit cell parameter and rotations of 4 degrees and 3.3 degrees for achiral pentagonal or hexagonal wires, respectively. Chirality causes the HOMO-LUMO gap to reduce by 0.1 eV. Chiral silicon nanowires are found to be metastable structures with a 4,5 (kcal/mol)/Si atom potential barrier for reversible chiral achiral transformation.
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18.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zajarniuk T., Szewczyk A., Gutowska M. U., Puzniak R., Szymczak H., Gudim I. A., Bedarev V. A., Pashchenko, M., I, Tomczak P., Szuszkiewicz W.
Заглавие : Quantum versus classical nature of the low-temperature magnetic phase transition in TbAl3(BO3)4
Место публикации : Phys. Rev. B. - 2022. - Vol. 105, Is. 9. - Ст.094418. - ISSN 2469-9950, DOI 10.1103/PhysRevB.105.094418. - ISSN 2469-9969(eISSN)
Примечания : Cited References: 26. - This work was supported partially by the National Science Centre (NCN) , Poland, under Project No. 2018/31/B/ST3/03289
Предметные рубрики: GROWTH
FIELD
HEAT
Аннотация: Specific heat CB of a TbAl3(BO3)4 crystal was studied for 50 mK T 300 K with emphasis on T 1 K where a phase transition was found at Tc
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19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Krylova S. N., Gudim I. A., Aleksandrovsky A. S., Vtyurin A. N., Krylov A. S.
Заглавие : Electronic band structures of NdFe3(BO3)4 and NdGa3(BO3)4 crystals: ab initio calculations
Коллективы : Russian Foundation for Basic Research GrantRussian Foundation for Basic Research (RFBR) [20-42-240009]
Место публикации : Ferroelectrics. - 2021. - Vol. 575, Is. 1. - P.11-17. - ISSN 0015-0193, DOI 10.1080/00150193.2021.1888219. - ISSN 1563-5112(eISSN)
Примечания : Cited References: 27. - This work was supported by the Russian Foundation for Basic Research Grant No. 20-42-240009
Предметные рубрики: HOFE3(BO3)4
TEMPERATURE
SPECTRA
GROWTH
Аннотация: NdFe3(BO3)4 and NdGa3(BO3)4 crystals are of great interest due to their physical properties. For example, NdFe3(BO3)4 crystal demonstrates magnetodielectric and magnetopiezoelectric effects, and NdGa3(BO3)4 crystal possesses luminescent and nonlinear optical properties. In this work, the properties of these materials are calculated by the plane-wave pseudo-potential method based on density functional theory. The structures of the crystals are optimized. The electronic structure of NdFe3(BO3)4 and NdGa3(BO3)4 are calculated.
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20.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Visotin M. A., Tarasov I. A., Fedorov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Prediction of orientation relationships and interface structures between α-, β-, γ-FeSi2 and Si phases
Коллективы : Russian Science FoundationRussian Science Foundation (RSF) [16-13-00060-Pi]
Место публикации : Acta Crystallogr. B. - 2020. - Vol. 76. - P.469-482. - ISSN 2052-5206(eISSN), DOI 10.1107/S2052520620005727
Примечания : Cited References: 85. - The following funding is acknowledged: Russian Science Foundation (grant No. 16-13-00060-Pi).
Предметные рубрики: THERMAL-EXPANSION
BETA-FESI2 FILMS
GROWTH
SILICON
DIFFRACTION
Аннотация: A pure crystallogeometrical approach is proposed for predicting orientation relationships, habit planes and atomic structures of the interfaces between phases, which is applicable to systems of low-symmetry phases and epitaxial thin film growth. The suggested models are verified with the example of epitaxial growth of α-, γ- and β-FeSi2 silicide thin films on silicon substrates. The density of near-coincidence sites is shown to have a decisive role in the determination of epitaxial thin film orientation and explains the superior quality of β-FeSi2 thin grown on Si(111) over Si(001) substrates despite larger lattice misfits. Ideal conjunctions for interfaces between the silicide phases are predicted and this allows for utilization of a thin buffer α-FeSi2 layer for oriented growth of β-FeSi2 nanostructures on Si(001). The thermal expansion coefficients are obtained within quasi-harmonic approximation from the DFT calculations to study the influence of temperature on the lattice strains in the derived interfaces. Faster decrease of misfits at the α-FeSi2(001)||Si(001) interface compared to γ-FeSi2(001)||Si(001) elucidates the origins of temperature-driven change of the phase growing on silicon substrates. The proposed approach guides from bulk phase unit cells to the construction of the interface atomic structures and appears to be a powerful tool for the prediction of interfaces between arbitrary phases for subsequent theoretical investigation and epitaxial film synthesis.
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