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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Rautskiy M. V., Eremin E. V., Patrin G. S., Kim P. D., Lee C. G.
Заглавие : Response of a manganite-based magnetic tunnel structure to microwave radiation
Место публикации : J. Phys. D. - 2012. - Vol. 45, Is. 25. - Ст.255301. - ISSN 0022-3727, DOI 10.1088/0022-3727/45/25/255301
Примечания : Cited References: 20. - This study was supported by the Russian Foundation for Basic Research, project no 11-02-00367-a; the Presidium of the Russian Academy of Sciences, program Fundamentals for Basic Research of Nanotechnology and Nanomaterials, project no 21.1; the Division of Physical Sciences of the Russian Academy of Sciences, program Spin-Dependent Effects in Solids and Spintronics, project no 2.4.4.1; the Siberian Branch of the Russian Academy of Sciences, integration projects nos 5 and 134; and the Federal target program Scientific and Pedagogical Personnel of Innovative Russia (State contract no NK-556P_15).
Предметные рубрики: IDENTICAL METALS
JUNCTIONS
RECTIFICATION
SPINTRONICS
MECHANISM
Аннотация: We demonstrate that a magnetic tunnel structure irradiated by microwaves can generate a typical voltage signal due to the rectification effect. We performed measurements in current-in-plane geometry when a current flows parallel to the interfaces in the structure. The value of the microwave-induced voltage strongly depends on the bias current and can be driven by a magnetic field. The rectification effect is discussed both in classical terms of nonlinearity of the current-voltage characteristics and within the mechanism involving the interplay between the spin-polarized current and the magnetization dynamics in the magnetic tunnel structure.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Petrov M. I., Balaev D. A., Ospishchev S. V., Aleksandrov K. S.
Заглавие : Transport properties of HTSC plus Ba(Pb, Met)O-3 composites as functions of the electrical and magnetic characteristics of nonsuperconducting components
Место публикации : Phys. Solid State: AMER INST PHYSICS, 2000. - Vol. 42, Is. 5. - P.810-815. - ISSN 1063-7834, DOI 10.1134/1.1131294
Примечания : Cited References: 27
Предметные рубрики: HIGH-TEMPERATURE SUPERCONDUCTORS
CURRENT-VOLTAGE CHARACTERISTICS
NORMAL-METAL LAYER
WEAK LINKS
JUNCTIONS
SCATTERING
BAPB1-XBIXO3
TRANSITION
IMPURITIES
BREAKING
Аннотация: Composites simulating a network of weak metallic links and consisting of a classic 1-2-3 HTSC and a BaPbO3 metal oxide with incorporated Sn, Ni, and Fe impurities have been prepared. Experimental resistivity, magnetic, and Mossbauer studies of the BaPb(0.9)Met(0.1)O(3) nonsuperconducting components are presented. The transport properties of the HTSC + BaPb(0.9)Met(0.1)O(3) composites have been investigated. The superconducting properties of the composites are observed to be suppressed, both when the carrier mean free path in nonsuperconducting components with tin impurities decreases, and as a result of an additional interaction of the magnetic moments of (Fe, Ni) impurities with the spins of supercurrent carriers. The experimental temperature dependences of the composite critical current are analyzed in terms of the de Gennes theory for the superconductor-normal metal-superconductor structures. (C) 2000 MAIK "Nauka/Interperiodica".
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Petrov M. I., Balaev D. A., Gokhfeld D. M., Ospishchev S. V., Shaikhutdinov K. A., Aleksandrov K. S.
Заглавие : Applicability of the theory based on Andreev reflection to the description of experimental current-voltage characteristics of polycrystalline HTSC plus normal metal composites
Место публикации : Physica C. - 1999. - Vol. 314, Is. 1-2. - P.51-54. - ISSN 0921-4534, DOI 10.1016/S0921-4534(99)00151-3
Примечания : Cited References: 19
Предметные рубрики: WEAK LINKS
JUNCTIONS
FILMS
Ключевые слова (''Своб.индексиров.''): ybacuo + bapbo3 composites--network of weak s-n-s links--current-voltage characteristic
Аннотация: Measurements of current-voltage characteristics (CVC) of Y3/4Lu1/4Ba2,Cu3O7 + BaPbO3 and Y3/4Lu1/4Ba2Cu3O7 +BaPb0.9Sn0.1O3 composites modelling network of superconducting-normal metal-superconducting (S-N-S) junctions in effectively 'clean' and 'dirty' limits, respectively, have been performed. Essential difference of CVCs for these composites is observed in spite of the identical preparation technique and experimental conditions. It is shown that the theory for S-N-S junctions [R. Kummel, U. Gunsenheimer, R. Nicolsky, Phys. Rev. B, 42 (1990) 3932] well describes the experimental CVCs of the composites in both cases. (C) 1999 Published by Elsevier Science B.V. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Petrov M. I., Balaev D. A., Shaikhutdinov K. A., Khrustalev B. P., Aleksandrov K. S.
Заглавие : Transport properties of high-temperature superconductor plus semiconductor composites with different carrier concentration
Место публикации : Phys. Solid State: American Institute of Physics, 1997. - Vol. 39, Is. 5. - P.735-740. - ISSN 1063-7834, DOI 10.1134/1.1129959
Примечания : Cited References: 26
Предметные рубрики: CRITICAL CURRENTS
WEAK LINKS
JUNCTIONS
Аннотация: Results are presented of an experimental study of the temperature dependence of the electrical resistivity rho(T), critical current density J(c)(T), and current-voltage characteristics of polycrystalline composites based on the high-temperature superconductor Y3/4Lu1/4Ba2Cu3O7 and copper oxide with different lithium doping levels. The experimental temperature dependence of the critical current of composites with varying volume content of the semiconductor ingredient and varying charge carrier concentration are found to be in qualitative agreement with theory which takes account of Andreev reflection of the carriers at the S-Sm and Sm-S surfaces of the S-Sm-S Josephson junction (where S is the superconductor and Sm is the semiconductor). (C) 1997 American Institute of Physics.
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Вид документа :
Шифр издания :
Автор(ы) : Петров, Михаил Иванович, Balaev D. A., Ospishchev S. V., Шайхутдинов, Кирилл Александрович, Khrustalev B. P., Aleksandrov K. S.
Заглавие : Critical currents in bulk Y3/4Lu1/4Ba2Cu3O7 + BaPbO3 composites
Место публикации : Physics Letters, Section A: General, Atomic and Solid State Physics. - 1997. - Vol. 237, Is. 1-2. - P.85-89
Предметные рубрики: HIGH-TC-SUPERCONDUCTORS
WEAK LINKS
JUNCTIONS
Ключевые слова (''Своб.индексиров.''): bulk composites--critical current density--network of weak s-n-s links--ybacuo + bapbo3--ybacuo+bapbo3 bulk composites--network of weak s-n-s links--critical current density
Аннотация: Bulk composites Y3/4Lu1/4Ba2Cu3O7 + BaPbO3 with BaPbO3 volume content of 0-60% have been prepared. Temperature dependences of resistance and critical current density Jc(T) are presented. The best agreement of experimental Jc(T) with theory has been reached for the Gunsenheimer-Schussler-Kummel consideration of superconductor-normal metal-superconductor (S-N-S) junctions in the "clean" limit. В© 1997 Elsevier Science B.V.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Val'kov V. V., Aksenov S. V.
Заглавие : Effects of inelastic spin-dependent electron transport through a spin nanostructure in a magnetic field
Место публикации : J. Exp. Theor. Phys.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2011. - Vol. 113, Is. 2. - P266-275. - ISSN 1063-7761, DOI 10.1134/S1063776111060070
Примечания : Cited References: 30. - This study was carried out under the program of the Physical Science Department of the Russian Academy of Sciences, Federal Target Program "Scientific and Scientific-Pedagogical Personnel of Innovative Russia in 2009-2013," Interdisciplinary Integration project no. 53 of the Siberian Branch of the Russian Academy of Sciences, and under partial support from the Russian Foundation for Basic Research (project no. 09-02-00127). The research work of one of the authors (S.V.A) was supported by grant no. MK-1300.2011.2 from the President of the Russian Federation.
Предметные рубрики: CONDUCTION
ANISOTROPY
JUNCTIONS
Ключевые слова (''Своб.индексиров.''): antiferromagnetic coupling--colossal magnetoresistance effect--iv characteristics--metallic contacts--potential profiles--spectral characteristics--spin dependent transport--spin dimer--spin moments--spin-dependent electron transport--spin-flip process--tight-binding approximations--transmission coefficients--antiferromagnetism--colossal magnetoresistance--current voltage characteristics--electric resistance--nanostructures--transport properties--magnetic field effects
Аннотация: The transport properties and current-voltage (I-V) characteristics of a system of spin dimers with antiferromagnetic coupling arranged between metallic contacts are investigated in the tight binding approximation using the Landauer-Buttiker formalism. It is shown that the s-d(f) exchange interaction between the spin moments of the electrons being transported and the spins of the nanostructure leads to the formation of a potential profile as well as its variation due to spin-flip processes. As a result, the spin-dependent transport becomes inelastic, and the transmission coefficient and the I-V characteristic are strongly modified. It is found that the application of a magnetic field induces additional transparency peaks in the spectral characteristic of the system and causes the colossal magnetoresistance effect.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Avramov P. V., Yakobson B. I., Scuseria G. E.
Заглавие : Effect of carbon network defects on the electronic structure of semiconductor single-wall carbon nanotubes
Место публикации : Phys. Solid State: AMER INST PHYSICS, 2004. - Vol. 46, Is. 6. - P1168-1172. - ISSN 1063-7834, DOI 10.1134/1.1767262
Примечания : Cited References: 15
Предметные рубрики: JUNCTIONS
Аннотация: For a single-wall (14, 0) carbon nanotube, the total density of electronic states of the ideal structure and of some possible defect structures is calculated in the framework of the band theory approach using Gaussian-type orbitals and the approximation of the generalized density gradient. It is shown that allowance for defects of the atomic structure of a nanotube makes it possible to adequately describe the existing experimental data on nanotube electronic structure. In the framework of the same approach, the total density of electronic states is calculated for an intermolecular contact of (5, 5) and (10, 0) single-wall carbon nanotubes formed due to the creation of a 5-7 defect. It is shown that the electronic states related to the contact region and the 5-7 defect lie in vicinity of the Fermi level. (C) 2004 MAIK "Nauka/Interperiodica".
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Petrov M. I., Balaev D. A., Gokhfel'd D. M., Shaikhutdinov K. A.
Заглавие : Andreev reflection in natural grain boundaries of polycrystalline high-T-c superconductor La1.85Sr0.15CuO4
Разночтения заглавия :авие SCOPUS: Andreev reflection in natural grain boundaries of polycrystalline high-Tc superconductor La1.85Sr0.15CuO 4
Место публикации : Phys. Solid State: AMER INST PHYSICS, 2003. - Vol. 45, Is. 7. - P1219-1222. - ISSN 1063-7834, DOI 10.1134/1.1594233
Примечания : Cited References: 30
Предметные рубрики: CURRENT-VOLTAGE CHARACTERISTICS
WEAK LINKS
CHARGE-TRANSPORT
JUNCTIONS
CONDUCTIVITY
HYSTERESIS
COMPOSITES
SCATTERING
Аннотация: The temperature evolution of the current-voltage characteristic (CVC) of a "break junction" with metal-type conductivity on the polycrystalline La1.85Sr0.15CuO4 high-temperature superconductor is investigated. The CVC exhibits gap peculiarities and hysteresis, which is observed in the region of negative differential resistance. The experimental results are described well in terms of the Kummel-Gunsenheimer-Nicolsky theory for an S-N-S junction (S is a superconductor, N is a normal metal) this theory takes into account multiple Andreev reflection of quasiparticles. It is shown that the shape of the CVC and the existence and the shape of hysteresis are determined by the ratio of "long" and "short" grain boundaries in the polycrystal under investigation. (C) 2003 MAIK "Nauka / Interperiodica".
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Petrov M. I., Balaev D. A., Ospishchev S. V., Shaihutdinov K. A., Khrustalev B. P., Aleksandrov K. S.
Заглавие : Critical currents in bulk Y3/4Lu1/4Ba2Cu3O7+BaPbO3 composites
Место публикации : Phys. Lett. A. - 1997. - Vol. 237, Is. 1-2. - P.85-89. - ISSN 0375-9601, DOI 10.1016/S0375-9601(97)00694-4
Примечания : Cited References: 24
Предметные рубрики: HIGH-TC-SUPERCONDUCTORS
WEAK LINKS
JUNCTIONS
Ключевые слова (''Своб.индексиров.''): ybacuo+bapbo3 bulk composites--network of weak s-n-s links--critical current density
Аннотация: Bulk composites Y3/4Lu1/4Ba2Cu3O7 + BaPbO3 with BaPbO3 volume content of 0-60% have been prepared. Temperature dependences of resistance and critical current density J(c)(T) are presented. The best agreement of experimental J(c)(T) with theory has been reached for the Gunsenheimer-Schussler-KUmmel consideration of superconductor-normal metal-superconductor (S-N-S) junctions in the "clean" limit. (C) 1997 Elsevier Science B.V.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Lee C. G., Kim P. D., Eremin E. V., Patrin G. S.
Заглавие : Optically driven conductivity and magnetoresistance in a manganite-based tunnel structure
Коллективы : Russian Foundation for Basic Research [08-02-00259-a, 08-02-00397-a]; Division of Physical Sciences of the RAS; [2.4.2]
Место публикации : J. Phys. D. - 2009. - Vol. 42, Is. 20. - Ст.205009. - ISSN 0022-3727, DOI 10.1088/0022-3727/42/20/205009
Примечания : Cited References: 13. - This study was supported by the Russian Foundation for Basic Research (Projects Nos 08-02-00259-a and 08-02-00397-a) and the Division of Physical Sciences of the RAS, Programme 'Spin-dependent Effects in Solids and Spintronics' (Project No 2.4.2 of the Siberian Branch of the RAS).
Предметные рубрики: JUNCTIONS
Ключевые слова (''Своб.индексиров.''): conducting layers--current-in-plane geometry--dielectric layer--electron hole pairs--interband absorption--magnetic tunnel junction--magnetic tunnels--multilayer structures--optical radiations--photoinduced change--potential barriers--radiation power density--threshold characters--tunnel structures--electric resistance--lanthanum--light--magnetic field effects--magnetoelectronics--magnetoresistance--manganese compounds--oxide minerals--photovoltaic effects--semiconductor junctions--transport properties--vehicular tunnels--wind tunnels--tunnel junctions
Аннотация: In the multilayer structure, La(0.7)Sr(0.3)MnO(3)/depleted manganite layer/MnSi, the photovoltaic effect has been discovered. The depleted manganite layer in the structure is dielectric and serves as a potential barrier between the ferromagnetic conducting La(0.7)Sr(0.3)MnO(3) and MnSi layers by the formation of a magnetic tunnel junction. The photoinduced changes in the transport properties of the magnetic tunnel structure have been observed in the current-in-plane geometry. The changes are reversible and saturate at radiation power densities over 30 mW cm(-2). The photovoltaic effect has a threshold character: it reveals only at h nu 1.17 eV. Most likely, the effect of optical radiation is related to the formation of electron-hole pairs due to interband absorption of light in the dielectric layer. A photocurrent through the tunnel junctions separating the conducting layers causes a redistribution of the current channels between the conducting layers, which influences the conductivity and the magnetoresistance of the structure.
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