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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Korshunov M. M., Ovchinnikov S. G., Sherman A. V.
Заглавие : Effective hamiltonian and properties of the normal and superconducting phases of n-type cuprates
Разночтения заглавия :авие SCOPUS: Effective Hamiltonian and properties of the normal and superconducting phases of n-type cuprates
Место публикации : JETP Letters. - 2004. - Vol. 80, Is. 1. - P.39-43. - ISSN 0021-3640, DOI 10.1134/1.1800212
Примечания : Cited References: 32
Предметные рубрики: T-J MODEL
ORDER-PARAMETER
QUASI-PARTICLES
COPPER OXIDES
FERMI-SURFACE
ELECTRON
SYMMETRY
RANGE
ND1.85CE0.15CUO4
TRANSITIONS
Аннотация: An effective low-energy Hamiltonian is derived from a microscopic multiband p-d model in the regime of strong electron correlations. The parameters of the p-d model are determined by comparison with the ARPES data for undoped Nd2CuO4. The Hamiltonian is the t-J* model in which hopping and exchange slowly decay with distance and are taken into account up to the fifth coordination sphere. The quasiparticle band structure is calculated as a function of the doping concentration with regard to short-range magnetic order, and the superconductivity theory with the spin-fluctuation pairing mechanism is constructed. Assuming that the parameters of the model do not depend on the doping level, we obtained quantitative agreement with the properties observed experimentally for the normal and superconducting phases without introducing fitting parameters. (C) 2004 MAIK "Nauka / Interperiodica".
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shestakov V. A., Korshunov M. M., Togushova Yu. N., Dolgov, O., V
Заглавие : Decisive proofs of the s± → s++ transition in the temperature dependence of the magnetic penetration depth
Коллективы : Russian Foundation for Basic Research (RFBR)Russian Foundation for Basic Research (RFBR) [19-32-90109]; RFBRRussian Foundation for Basic Research (RFBR); Government of Krasnoyarsk Territory; Krasnoyarsk Regional Fund of Science to the Research Projects 'Electronic correlation effects and multiorbital physics in iron-based materials and cuprates' [19-42-240007]
Место публикации : Supercond. Sci. Technol. - 2021. - Vol. 34, Is. 7. - Ст.075008. - ISSN 0953-2048, DOI 10.1088/1361-6668/abff6f. - ISSN 1361-6668(eISSN)
Примечания : Cited References: 40. - We are grateful to D V Efremov, A S Fedorov, S G Ovchinnikov, E I Shneyder, D Torsello, and A N Yaresko for useful discussions. This work was supported in part by the Russian Foundation for Basic Research (RFBR) Grant No. 19-32-90109 and by RFBR and Government of Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science to the Research Projects 'Electronic correlation effects and multiorbital physics in iron-based materials and cuprates' Grant No. 19-42-240007.
Предметные рубрики: ORDER-PARAMETER
IMPURITIES
SUPERCONDUCTORS
STATES
MODEL
Аннотация: One of the features of the unconventional s± state in iron-based superconductors is possibility to transform to the s++ state with the increase of the nonmagnetic disorder. Detection of such a transition would prove the existence of the s± state. Here we study the temperature dependence of the London magnetic penetration depth within the two-band model for the s± and s++ superconductors. By solving Eliashberg equations accounting for the spin-fluctuation mediated pairing and nonmagnetic impurities in the T-matrix approximation, we have derived a set of specific signatures of the s± → s++ transition: (1) sharp change in the behavior of the penetration depth λL as a function of the impurity scattering rate at low temperatures; (2) before the transition, the slope of ΔλL(T) = λL(T) - λL(0) increases as a function of temperature, and after the transition this value decreases; (3) the sharp jump in the inverse square of the penetration depth as a function of the impurity scattering rate, λL-2(Γa), at the transition; (4) change from the single-gap behavior in the vicinity of the transition to the two-gap behavior upon increase of the impurity scattering rate in the superfluid density ρs(T).
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