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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fedorov A. S., Sorokin P. B., Kuzubov A. A.
Заглавие : Ab initio study of hydrogen chemical adsorption on platinum surface/carbon nanotube join system
Место публикации : Phys. Status Solidi B. - 2008. - Vol. 245, Is. 8. - P.1546-1551. - ISSN 0370-1972, DOI 10.1002/pssb.200844155
Примечания : Cited References: 31
Предметные рубрики: WALLED CARBON NANOTUBES
MOLECULAR-DYNAMICS
ROOM-TEMPERATURE
STORAGE
ENERGY
THERMODYNAMICS
GRAPHITE
DENSITY
POINTS
Аннотация: The process of hydrogen chemical adsorption on platinum cluster/single wall carbon nanotube (CNT) join surfaces is modelled at various temperatures and pressures. For that, the adsorption energy of hydrogen atoms on surfaces of both platinum (111) plate and CNT (5,5) or (8,8) types is calculated by density functional theory with the PBE approximation. At various temperatures the hydrogen atom hopping rate on both platinum and CNT surfaces is calculated by the transition state theory. Furthermore the hydrogen hopping rate from the platinum surface to the attached nanotube is obtained by calculation of the total energy profile. It is proved that hydrogen atoms can migrate easily at the platinum surface at all temperatures, but at the CNT surface they can migrate beginning at 400-500 K. By calculation of chemical potentials of hydrogen in gas or on CNT or platinum cluster surfaces the equilibrium density of adsorbed hydrogen was calculated at different temperatures and pressures. It is established that for all temperatures in the range 300-900 K and for all pressures less than 500 bar, the hydrogen is dissociated and chemically adsorbed on the platinum surface very effectively, but surface site occupation by hydrogen on attached CNT surface is rather small. But if CNT vacancies are present in the tube structure and the temperature is lower then 450 K, hydrogen atoms can be adsorbed effectively enough on these vacancies. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fedorov A. S., Sorokin P. B.
Заглавие : Density and thermodynamics of hydrogen adsorbed on the surface of single-walled carbon nanotubes
Место публикации : Phys. Solid State: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2006. - Vol. 48, Is. 2. - P402-407. - ISSN 1063-7834, DOI 10.1134/S1063783406020351
Примечания : Cited References: 22
Предметные рубрики: MOLECULAR-DYNAMICS
ROOM-TEMPERATURE
STORAGE
ADSORPTION
H-2
TRANSITIONS
TUBES
Аннотация: A method is proposed for calculating the adsorption of hydrogen in single-walled carbon nanotubes. This method involves solving the Schrodinger equation for a particle (hydrogen molecule) moving in a potential generated by the surrounding hydrogen molecules and atoms forming the wall of the carbon nanotube. The interaction potential for hydrogen molecules is taken in the form of the Silvera-Goldman empirical potential, which adequately describes the experimental data on the interaction between H(2) molecules (including the van der Waals interaction). The interaction of hydrogen molecules with carbon atoms is included in the calculation through the Lennard-Jones potential. The free energy at a nonzero temperature is calculated with allowance made for the phonon contribution, which, in turn, makes it possible to take into account the correlations in the mutual arrangement of the neighboring molecules. The dependences of the total energy, the free energy, and the Gibbs thermodynamic potential on the applied pressure P and temperature T are calculated for adsorbed hydrogen molecules. These dependences are obtained for the first time with due regard for the quantum effects. The pressure and temperature dependences of the hydrogen density m(P, T) are also constructed for the first time.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Myagkov V. G., Ivanenko A. A., Bykova L. E., Yozhikova E. V., Maksimov I. A., Ivanov V. V.
Заглавие : Effect of exposure to optical radiation and temperature on the electrical and optical properties of In2O3 films produced by autowave oxidation
Коллективы : Ministry of Education and Science of the Russian Federation [14.513.11.0023]
Место публикации : Semiconductors: MAIK Nauka-Interperiodica / Springer, 2014. - Vol. 48, Is. 2. - P.207-211. - ISSN 1063-7826, DOI 10.1134/S1063782614020286. - ISSN 1090-6479
Примечания : Cited References: 42. - This study was supported by the Ministry of Education and Science of the Russian Federation, Federal Targeted Program "Research and Development in Priority Fields of Development of the Science and Technology Complex of Russia for 2007-2013", state contract no. 14.513.11.0023.
Предметные рубрики: GAS SENSOR RESPONSE
INDIUM OXIDE-FILMS
THIN-FILMS
HIGH-PERFORMANCE
TIN OXIDE
TRANSPARENT CONDUCTORS
SUBSTRATE-TEMPERATURE
ROOM-TEMPERATURE
TRANSISTORS
PHOTOREDUCTION
Аннотация: Indium-oxide films are synthesized by the autowave-oxidation reaction. It is shown that, upon exposure to optical radiation, the resistance of the films sharply decreases and the maximal relative change in the resistance is 52% at room temperature. Two resistance relaxation rates after termination of the irradiation, 15 Omega s(-1) during the first 30 s and 7 Omega s(-1) over the remaining time, are determined. The data of infrared spectroscopy of the films show that exposure to optical radiation induces a 2.4% decrease in the transmittance at a wavelength of 6.3 mu m. It is found that, after termination of the irradiation, the transmittance gradually increases with a rate of 0.006% s(-1). It is suggested that photoreduction is the dominant mechanism responsible for changes in the electrical and optical properties of the In2O3 films.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Flerov I. N., Kartashev A. V., Grankina V. A.
Заглавие : Heat capacity and phase transitions in NH4LiSO4, Cs-x(NH4)(1-x) LiSO4, and RbLiSO4
Разночтения заглавия :авие SCOPUS: Heat capacity and phase transitions in NH4LiSO4, Csx(NH4)1-xLiSO4, and RbLiSO 4
Место публикации : Phys. Solid State: AMER INST PHYSICS, 2005. - Vol. 47, Is. 4. - P720-728. - ISSN 1063-7834, DOI 10.1134/1.1913987
Примечания : Cited References: 29
Предметные рубрики: ROOM-TEMPERATURE
MONTE-CARLO
LINH4SO4
SUBSTITUTION
CRYSTALS
SULFATE
CSLISO4
Аннотация: The heat capacity of NH4LiSO4, RbLiSO4, and Cs-x(NH4)(1 - x) LiSO4 crystals and its behavior over a broad temperature range including the phase transition regions were studied. The entropy changes corresponding to structural transformations in these crystals were found not to be characteristic of straightforward ordering of structural blocks. The results obtained are discussed in terms of phenomenological theory and model concepts. (C) 2005 Pleiades Publishing, Inc.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Zhigalov V. S., Bykova L. E., Bondarenko G. N., Rybakova A. N., Matsynin A. A., Tambasov I. A., Volochaev M. N., Velikanov D. A.
Заглавие : High rotatable magnetic anisotropy in epitaxial L10CoPt(111) thin films
Место публикации : JETP Letters. - 2015. - Vol. 102, Is. 6. - P.355-360. - ISSN 00213640 (ISSN), DOI 10.1134/S0021364015180101
Примечания : Cited References: 51. - A We are grateful to L.A. Solov'ev for the help in X-ray studies of the epitaxial orientation of phases in L10CoPt(111) samples. This work was supported by the Russian Foundation for Basic Research (project no. 15-02-00948), in part by the Council the President of the Russian Federation for Support of Young Scientists and Leading Scientific Schools (project no. SP-317.2015.1), and by the Foundation for the Assistance of the Development of Small Innovative Scientific and Engineering Enterprises (UMNIK).
Предметные рубрики: Co-Pt ALLOYS
ROOM-TEMPERATURE
COERCIVITY
ORIGIN
ORDER
STATE
Аннотация: The evolution of the structural and magnetic properties in epitaxial film systems Co/Pt(111) of equiatomic composition during vacuum annealing has been presented. Annealing to the temperature of 400°C does not lead to the variation of the structural and magnetic properties of the films, which indicates the absence of considerable mixing of the Co/Pt interface. With the increase in the annealing temperature from 400 to 750°C, nanoclusters containing the main magnetically hard L10CoPt(111) phase epitaxially intergrown with the CoPt3 phase are formed. High rotatable magnetic anisotropy has been found in the prepared films. In magnetic fields above the coercive force (H > HC = 8 kOe), the easy anisotropy axis with the angle of lag taken into account can be oriented in any spatial direction. Possible mechanisms of the formation of the rotatable magnetic anisotropy have been discussed. It has been assumed that the high rotatable magnetic anisotropy makes the main contribution to the magnetic perpendicular anisotropy in CoxPt1–x films. © 2015, Pleiades Publishing, Inc.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Varnakov S. N., Gomoyunova M. V., Grebenyuk G. S., Zabluda V. N., Ovchinnikov S. G., Pronin I. I.
Заглавие : Initial growth stages of manganese films on the Si(100)2 x 1 surface
Коллективы : Russian-German Laboratory at HZB BESSY; Ministry of Education and Science of the Russian Federation [14V37.21.1276]; Russian Foundation for Basic Research [13-02-00398, 13-02-01265]
Место публикации : Phys. Solid State: MAIK Nauka-Interperiodica / Springer, 2014. - Vol. 56, Is. 2. - P.380-384. - ISSN 1063-7834, DOI 10.1134/S1063783414020310. - ISSN 1090-6460
Примечания : Cited References: 20. - This study was supported by the Russian-German Laboratory at HZB BESSY, the Ministry of Education and Science of the Russian Federation (agreement 14V37.21.1276), and the Russian Foundation for Basic Research (project nos. 13-02-00398 and 13-02-01265).
Предметные рубрики: PHOTOELECTRON-SPECTROSCOPY
ROOM-TEMPERATURE
SILICIDES
SILICON
Аннотация: Initial growth stages of manganese films on the Si(100)2 × 1 surface at room temperature have been investigated using high-energy-resolution photoelectron spectroscopy, and the dynamics of the variation in their phase composition and electronic structure with the coverage growth has been revealed. It has been shown that the interfacial manganese silicide and the film of the solid solution of silicon in manganese are sequentially formed under these conditions on the silicon surface. The growth of the metal manganese film starts after the deposition of ~0.9 nm Mn. Segregation of silicon on the film surface is observed in the range of coverages up to 1.6 nm Mn.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fransson J., Eriksson O., Sandalov I.
Заглавие : Many-body approach to spin-dependent transport in quantum dot systems
Место публикации : Phys. Rev. Lett.: AMERICAN PHYSICAL SOC, 2002. - Vol. 88, Is. 22. - Ст.226601. - ISSN 0031-9007, DOI 10.1103/PhysRevLett.88.226601
Примечания : Cited References: 37
Предметные рубрики: SINGLE-ELECTRON TRANSISTOR
COULOMB-BLOCKADE
ANDERSON IMPURITY
ROOM-TEMPERATURE
TUNNEL-JUNCTIONS
EVEN NUMBER
MODEL
MAGNETORESISTANCE
OSCILLATIONS
CONDUCTANCE
Аннотация: By means of a diagram technique for Hubbard operators, we show the existence of a spin-dependent renormalization of the localized levels in an interacting region, e.g., quantum dot, modeled by the Anderson Hamiltonian with two conduction bands. It is shown that the renormalization of the levels with a given spin direction is due to kinematic interactions with the conduction subbands of the opposite spin. The consequence of this dressing of the localized levels is a drastically decreased tunneling current for ferromagnetically ordered leads compared to that of paramagnetically ordered leads. Furthermore, the studied system shows a spin-dependent resonant tunneling behavior for ferromagnetically ordered leads.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Perlepe, Panagiota, Oyarzabal, Itziar, Mailman, Aaron, Yquel, Morgane, Platunov M. S., Dovgaliuk, Iurii, Rouzieres, Mathieu, Negrier, Philippe, Mondieig, Denise, Suturina, Elizaveta A., Dourges, Marie-Anne, Bonhommeau, Sebastien, Musgrave, Rebecca A., Pedersen, Kasper S., Chernyshov, Dmitry, Wilhelm, Fabrice, Rogalev, Andrei, Mathoniere, Corine, Clerac, Rodolphe
Заглавие : Metal-organic magnets with large coercivity and ordering temperatures up to 242°C
Коллективы : University of Bordeaux; Region Nouvelle AquitaineRegion Nouvelle-Aquitaine; Quantum Matter Bordeaux; Centre National de la Recherche Scientifique (CNRS)Centre National de la Recherche Scientifique (CNRS); Basque GovernmentBasque Government; VILLUM FONDEN [15374]; Academy of FinlandAcademy of Finland [289172]
Место публикации : Science. - 2020. - Vol. 370, Is. 6516. - P.587-591. - ISSN 0036-8075, DOI 10.1126/science.abb3861. - ISSN 1095-9203(eISSN)
Примечания : Cited References: 42. - This work was supported by the University of Bordeaux, the Region Nouvelle Aquitaine, Quantum Matter Bordeaux, and the Centre National de la Recherche Scientifique (CNRS). I.O. and R.C. are grateful to the Basque Government for I.O.'s postdoctoral grant. K.S.P. thanks the VILLUM FONDEN for a Villum Young Investigator grant (15374). A.M. thanks JYU and the Academy of Finland (project 289172) for support
Предметные рубрики: ROOM-TEMPERATURE
CHROMIUM
FERROMAGNETISM
DIFFRACTION
COMPLEXES
Аннотация: Magnets derived from inorganic materials (e.g., oxides, rare-earth–based, and intermetallic compounds) are key components of modern technological applications. Despite considerable success in a broad range of applications, these inorganic magnets suffer several drawbacks, including energetically expensive fabrication, limited availability of certain constituent elements, high density, and poor scope for chemical tunability. A promising design strategy for next-generation magnets relies on the versatile coordination chemistry of abundant metal ions and inexpensive organic ligands. Following this approach, we report the general, simple, and efficient synthesis of lightweight, molecule-based magnets by postsynthetic reduction of preassembled coordination networks that incorporate chromium metal ions and pyrazine building blocks. The resulting metal-organic ferrimagnets feature critical temperatures up to 242°C and a 7500-oersted room-temperature coercivity.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Lim, Chang Sung, Atuchin V. V., Aleksandrovsky A. S., Molokeev M. S., Oreshonkov A. S.
Заглавие : Microwave sol–gel synthesis of CaGd2(MoO4)4:Er3+/Yb3+ phosphors and their upconversion photoluminescence properties
Место публикации : J. Am. Ceram. Soc.: Wiley-Blackwell, 2015. - Vol. 98, Is. 10. - P.3223-3230. - ISSN 0002, DOI 10.1111/jace.13739. - ISSN 15512916(eISSN)
Примечания : Cited References:69. - This study was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2014-046024). VVA and ASA are partially supported by the Ministry of Education and Science of the Russian Federation.
Предметные рубрики: RED-EMITTING PHOSPHORS
VIBRATIONAL PROPERTIES
LUMINESCENCE PROPERTIES
WHITE LEDS
SPECTROSCOPIC PROPERTIES
HYDROTHERMAL SYNTHESIS
CRYSTAL-STRUCTURE
ROOM-TEMPERATURE
ENERGY-TRANSFER
SR
Аннотация: CaGd2(MoO4)4:Er3+/Yb3+ phosphors with the doping concentrations of Er3+ and Yb3+ (x = Er3+ + Yb3+, Er3+ = 0.05, 0.1, 0.2, and Yb3+ = 0.2, 0.45) have been successfully synthesized by the microwave sol–gel method, and the crystal structure refinement and upconversion photoluminescence properties have been investigated. The synthesized particles, being formed after heat-treatment at 900°C for 16 h, showed a well-crystallized morphology. Under the excitation at 980 nm, CaGd2(MoO4)4:Er3+/Yb3+ particles exhibited strong 525 and 550-nm emission bands in the green region and a weak 655-nm emission band in the red region. The Raman spectrum of undoped CaGd2(MoO4)4 revealed about 15 narrow lines. The strongest band observed at 903 cm−1 was assigned to the ν1 symmetric stretching vibration of MoO4 tetrahedrons. The spectra of the samples doped with Er and Yb obtained under 514.5 nm excitation were dominated by Er3+ luminescence preventing the recording Raman spectra of these samples. Concentration quenching of the erbium luminescence at 2H11/2→4I15/2 and 4S3/2→4I15/2 transitions in the CaGd2(MoO4)4:Er3+/Yb3+ crystal structure was established to be approximately at the 10 at.% doping level.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Goryainov S. V., Krylov A. S., Pan Y. M., Madyukov I. A., Smirnov M. B., Vtyurin A. N.
Заглавие : Raman investigation of hydrostatic and nonhydrostatic compressions of OH- and F-apophyllites up to 8 GPa
Место публикации : J. Raman Spectrosc.: WILEY-BLACKWELL, 2012. - Vol. 43, Is. 3. - P.439-447. - ISSN 0377-0486, DOI 10.1002/jrs.3049
Примечания : Cited References: 18. - This work was supported by the Siberian Division of RAS (Integration Project 109), the Russian Ministry of Science and Education and the CRDF (BRHE - REC-008 grant) and the Russian Foundation for Basic Research (RFBR-11-05-01121).
Предметные рубрики: RADIATION-INDUCED DEFECTS
ALPHA-QUARTZ
ROOM-TEMPERATURE
MEMORY GLASS
PRESSURE
FLUORAPOPHYLLITE
PHASE
MODEL
Ключевые слова (''Своб.индексиров.''): raman spectroscopy--high pressure--apophyllite--layer silicate--amorphization
Аннотация: Layer silicates F- and OH-apophyllites, KCa4Si8O20(F, OH)·8H2O, have been investigated by Raman spectroscopy at hydrostatic and nonhydrostatic pressures up to 8 GPa in diamond anvil cells using a 4 : 1 methanol–ethanol mix as pressure-transmitting medium. Our experiments show that at hydrostatic compression, apophyllites retain their crystalline states (i.e. no amorphization) up to 5 GPa. The wavenumbers of most bands exhibit linear dependences on pressure, except for a few ones, e.g. at 162 and 3565 cm–1 in OH-form (160.5 and 3558 cm–1 in F-form) that show nonlinear dependences. Nonhydrostatic compression with additional uniaxial loading induces amorphization of apophyllites. The majority of the bands in OH-apophyllite decreases markedly in intensity and shows considerable broadening under nonhydrostatic compression up to 3–6 GPa. In addition, the wavenumbers of several bands at nonhydrostatic compression exhibit considerable nonlinear dependences on pressure with strong hysteresis. These bands are mainly associated with vibrations of the interlayer ions and molecules and also of stretching and bending silicate sheets, hence being highly sensitive to the interlayer distance. Finally, we have calculated the lattice dynamics of F-apophyllite and interpreted the majority of bands, and these data are used to explain the complex baric behavior of the bands. Copyright © 2011 John Wiley & Sons, Ltd.
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11.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Myagkov V. G., Tarasov A. S., Ivanenko A. A., Bykova L. E., Nemtsev I. V., Eremin E. V., Yozhikova E. V.
Заглавие : Reversible UV induced metal-semiconductor transition in In2O3 thin films prepared by autowave oxidation
Коллективы : Federal Target Program [14.513.11.0023]; Russian Foundation for Basic Research [14-02-31156]
Место публикации : Semicond. Sci. Technol.: IOP Publishing, 2014. - Vol. 29, Is. 8. - Ст.82001. - ISSN 0268-1242, DOI 10.1088/0268-1242/29/8/082001. - ISSN 1361-6641
Примечания : Cited References: 56. - This work was supported by the Federal Target Program through Contract No 14.513.11.0023; the Russian Foundation for Basic Research, Project No. 14-02-31156.
Предметные рубрики: TRANSPARENT CONDUCTING OXIDES
Ga-DOPED ZnO
LOW-TEMPERATURE
HIGH-PERFORMANCE
SUBSTRATE-TEMPERATURE
INSULATOR-TRANSITION
ROOM-TEMPERATURE
TRANSISTORS
COMBUSTION
PHOTOREDUCTION
Ключевые слова (''Своб.индексиров.''): indium oxide thin films--autowave oxidation--metal-semiconductor transition--uv irradiation--photoreduction
Аннотация: We have prepared thin indium oxide films by the autowave oxidation reaction. Measurements of temperature dependence of resistivity, Hall carrier concentration and Hall mobility have been conducted in the temperature range 5-272 K. Before ultraviolet (UV) irradiation, the indium oxide film had a semiconductor-like temperature dependence of resistivity. and the ratio of rho (5 K)/rho(272 K) was very limited (similar to 1.2). It was found that after UV irradiation of the In2O3 film, the metal-semiconductor transition (MST) was observed at similar to 100 K. To show that this MST is reversible and repeatable, two full cycles of 'absence of MST-presence of MST' have been done using UV irradiation (photoreduction) as the induced mechanism and exposure to an oxygen environment as the reversible mechanism, respectively. MST in transparent conducting oxide (TCO) is possibly associated with the undoped structure of metal oxide, which has some disorder of oxygen vacancies. It was suggested that reversible UV induced metal-semiconductor transition would occur in other TCOs.
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12.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V.
Заглавие : Spintronics: manganite-based magnetic tunnel structures
Место публикации : Phys. Usp.: Turpion LTD, 2012. - Vol. 55, Is. 3. - P.250-269. - ISSN 1063-7869, DOI 10.3367/UFNe.0182.201203b.0263
Примечания : Cited References: 91. - This work was supported by the Russian Foundation for Basic Research (grant No. 11-02-00367-a); the program of the Presidium of the RAS, Fundamental Research on Nanotechnologies and Nanomaterials (grant No. 21.1); the program of the Department of Physical Sciences of the RAS "Spin Phenomena in Solid Nanostructures and Spintronics" (grant No. 2.4.4.1); integration projects of the Siberian Branch, RAS, Nos 5 and 134; and the Federal Special Purpose Program "Scientific and Pedagogical Personnel of Innovative Russia" (state contract No. NK-556P_15).
Предметные рубрики: HIGH-FREQUENCY RECTIFICATION
THIN INSULATING FILM
COLOSSAL MAGNETORESISTANCE
GIANT MAGNETORESISTANCE
ELECTRONIC-STRUCTURE
SANDWICH STRUCTURES
SPIN POLARIZATION
IDENTICAL METALS
PHASE-SEPARATION
ROOM-TEMPERATURE
Аннотация: A topical and highly promising aspect of the field of spintronics is the physics involved in the flow of a spin-polarized current through magnetic tunnel structures. This review focuses on manganite-based structures, which are appealing for their high Curie temperature, highly spin-polarized conduction electrons, high chemical stability, and well-developed fabrication technology. Particular emphasis is placed on some novel approaches to studying the tunnel structures, including the use of planar geometry and the application of combined external factors (microwave and optical radiation) to investigate spin-polarized transport.
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13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Badía-Romano L., Rubín J., Magén C., Bartolomé F., Sesé J., Ibarra M.R., Bartolomé J., Hierro-Rodriguez A., Martín J.I., Alameda J.M., Bürgler D.E., Varnakov S. N., Komogortsev S. V., Ovchinnikov S. G.
Заглавие : Thermomagnetic behaviour and compositional irreversibility on (Fe/Si)3 multilayer films
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2014. - Vol. 364. - P.24-33. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2014.04.029. - ISSN 1873-4766
Примечания : Cited References: 52. - The financial support of the Spanish MINECOMAT2011-23791, FIS2008-06249, the President of Russia Grant (NSh-1044.2012.2), RFFI Grant 13-02-01265, 14-0290404, Aragonese DGA-IMANA E34 (cofunded by Fondo Social Europeo) and that received from the European Union FEDER funds is acknowledged. L.B.R. acknowledges the Spanish MINECO FPU 2010 grant. Authors would like to acknowledge the use of Servicio General de Apoyo a la Investigación-SAI, Universidad de Zaragoza.
Предметные рубрики: SPUTTERED FE/SI SUPERLATTICES
INTERLAYER EXCHANGE
GIANT MAGNETORESISTANCE
MAGNETIC-PROPERTIES
SILICIDE FORMATION
EPITAXIAL-GROWTH
ROOM-TEMPERATURE
IRON DISILICIDE
TRILAYER FILMS
THIN-FILMS
Ключевые слова (''Своб.индексиров.''): fe-si multilayer--chemical transformation--fe silicide--interlayer exchange coupling--magnetic domain--in situ annealing
Аннотация: This work presents the correlation between the morphology and magnetic properties of (Fe/Si)3 multilayers with different Fe layer thicknesses and fixed Si spacer thickness in a broad temperature range (View the MathML source5T800K). Films were prepared by thermal evaporation under ultrahigh vacuum onto a buffer layer of Fe/Ag deposited on a GaAs(001) substrate. Transmission electron microscopy reveals good epitaxial growth and phase transformations in the c-FeSi phase formed during deposition as well as upon subsequent annealing of the sample up to 800 K. Remanence to saturation magnetization MR/MS ratios and saturation fields are related to several types of interlayer exchange coupling. 90°-coupling and a superposition of 90° and antiferromagnetic interlayer exchange coupling are found depending on the Fe layer thickness. Magnetization curves were investigated as a function of temperature by in situ annealing. They show an irreversible thermal process as temperature increases from 300 to 450 K that is correlated to the formation of a ferromagnetic silicide phase. At higher temperature this phase transforms into a paramagnetic Fe–Si phase.
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14.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Ryabinkina L. I., Romanova O. B., Velikanov D. A., Balaev A. D., Balaev D. A., Yanushkevich K. I., Galyas A. I., Demidenko O. F., Bandurina O. N.
Заглавие : Transport properties and ferromagnetism of Co(x)Mn(1-x)Ssulfides
Разночтения заглавия :авие SCOPUS: Transport properties and ferromagnetism of Co x Mn 1 - X S sulfides
Место публикации : J. Exp. Theor. Phys.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2008. - Vol. 106, Is. 4. - P765-772. - ISSN 1063-7761, DOI 10.1134/S1063776108040158
Примечания : Cited References: 39
Предметные рубрики: GIANT VOLUME MAGNETOSTRICTION
COLOSSAL MAGNETORESISTANCE
MAGNETIC SEMICONDUCTORS
ELECTRICAL-PROPERTIES
ROOM-TEMPERATURE
ALPHA-MNS
SPINTRONICS
TRANSITION
FEXMN1-XS
FIELDS
Ключевые слова (''Своб.индексиров.''): coulomb interactions--current voltage characteristics--electromotive force--ferromagnetism--magnetic susceptibility--magnetization--thermoelectricity--transport properties--charge susceptibility--external magnetic fields--temperature intervals--thermoelectromotive force--cobalt compounds
Аннотация: We have studied the resistivity and thermoelectromotive force (thermo emf) in a temperature range of T = 80-1000 K, the magnetic susceptibility and magnetization in a temperature range of T= 4.2-300 K at an external magnetic field of up to 70 kOe, and the structural characteristics of CoxMn1 - S-x sulfides (0
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