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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Makarov I. A., Ovchinnikov S. G., Shneider E. I.
Заглавие : Dependence of the critical temperature of high-temperature cuprate superconductors on hoppings and spin correlations between CuO2 planes
Место публикации : J. Exp. Theor. Phys.: MAIK Nauka-Interperiodica / Springer, 2012. - Vol. 114, Is. 2. - P.329-342. - ISSN 1063-7761, DOI 10.1134/S1063776112020264
Примечания : Cited References: 73. - This study was supported in part by the Presidium of the Russian Academy of Sciences (program "Quantum Physics of Condensed Media," project no. 18.7), jointly by the Siberian and Ural branches of the Russian Academy of Sciences (integration projects project no. 40), the Russian Foundation for Basic Research (project no. 09-02-00127), the Presidential Program in Support of Young Scientists in Russia (project no. MK-1683.2010.2), and the federal target program "Specialists" (project no. P891). One of the authors (E.I.Sh.) gratefully acknowledges support from the nonprofit Dynasty foundation.
Предметные рубрики: T-J MODEL
BAND HUBBARD-MODEL
SINGLE-CRYSTALS
TRANSITION-TEMPERATURE
FERMI-SURFACE
DOPING DEPENDENCE
THERMAL-EXPANSION
COPPER OXIDES
ANISOTROPY
LA2-XSRXCUO4
Аннотация: The influence of interlayer hoppings on the superconducting transition temperature (T c) in bilayer cuprates has been studied. The parameter of hopping between layers is expressed as t ⊥(k) = t ⊥(cos(k x ) − cos(k y ))2 and treated as a small perturbation for the states of two CuO2 planes described by the t-t′-t″-J* model. In the generalized mean field approximation for dx2−y2{d_{{x. } - {y. }}} symmetry of the superconducting gap, neither the interlayer hopping or exchange interaction, nor the pair hopping between CuO2 layers provides an additional mechanism of Cooper pair formation or an increase in T c. In the concentration dependence of T c, the bilayer splitting of the upper Hubbard band of quasi-holes is manifested as two peaks with temperatures slightly lower than the maximum T c for a single-layer cuprate. Interlayer antiferromagnetic spin correlations suppress bilayer splitting.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Demidov A. A., Volkov D. V., Gudim I. A., Eremin E. V., Boldyrev K. N.
Заглавие : Magnetic, magnetoelastic, and spectroscopic properties of TmAl3(BO3)4
Коллективы : Russian Foundation for Basic Research [13-02-12442ofi_m2]; Russian Federation [MK-1700.2013.2]
Место публикации : J. Exp. Theor. Phys.: MAIK Nauka-Interperiodica / Springer, 2014. - Vol. 119, Is. 4. - P.737-744. - ISSN 1063-7761, DOI 10.1134/S106377611410015X. - ISSN 1090-6509
Примечания : Cited References: 28. - This study was supported financially by the Russian Foundation for Basic Research (project no. 13-02-12442ofi_m2) and (K.N.B.) by the grant no. MK-1700.2013.2 from the President of the Russian Federation.
Предметные рубрики: THERMAL-EXPANSION
CRYSTALS
MAGNETOSTRICTION
HoAl3(BO3)4
GARNETS
Аннотация: The thermodynamic properties of alumoborate TmAl3(BO3)4 single crystal are studied experimentally and theoretically. A theoretical analysis based on the crystal field model makes it possible to interpret all measured parameters. The crystal field parameters are determined. The temperature (3–300 K) and field (up to 9 T) dependences of magnetization are described. The field and temperature dependences of multipole moments of the Tm3+ ion in TmAl3(BO3)4 make it possible to describe magnetostriction and low-temperature anomalies in thermal expansion.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kartashev A. V., Bondarev V. S., Flerov I. N., Gorev M. V., Pogorel'tsev E. I., Shabanov A. V., Molokeev M. S., Guillemet-Fritsch S., Raevskii I. P.
Заглавие : Study of the Physical Properties and Electrocaloric Effect in the BaTiO3 Nano- and Microceramics
Место публикации : Phys. Solid State. - 2019. - Vol. 61, Is. 6. - P.1052-1061. - ISSN 1063-7834, DOI 10.1134/S1063783419060088. - ISSN 1090-6460(eISSN)
Примечания : Cited References: 38
Предметные рубрики: HEAT-CAPACITY
DIELECTRIC-PROPERTIES
THERMAL-EXPANSION
THIN-FILMS
Аннотация: The specific heat, thermal expansion, permittivity, and electrocaloric effect in bulk of BaTiO3 (BT) samples in the form of nano- (nBT-500 nm) and micro- (mBT-1200 nm) ceramics fabricated using spark plasma sintering and solid-state plasma techniques have been investigated. The size effect has been reflected, to a great extent, in the suppression of the specific heat and thermal expansion anomalies and in the changes in the temperatures and entropies of phase transitions and permittivity, and a decrease in the maximum intensive electrocaloric effect: ΔTmaxAD = 29 mK (E = 2.0 kV/cm) for nBT and ΔTmaxAD = 70 mK (E = 2.5 kV/cm) for mBT. The conductivity growth at temperatures above 360 K leads to the significant irreversible heating of the samples due to the Joule heat release in the applied electric field, which dominates over the electrocaloric effect.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Visotin M. A., Tarasov I. A., Fedorov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Prediction of orientation relationships and interface structures between α-, β-, γ-FeSi2 and Si phases
Коллективы : Russian Science FoundationRussian Science Foundation (RSF) [16-13-00060-Pi]
Место публикации : Acta Crystallogr. B. - 2020. - Vol. 76. - P.469-482. - ISSN 2052-5206(eISSN), DOI 10.1107/S2052520620005727
Примечания : Cited References: 85. - The following funding is acknowledged: Russian Science Foundation (grant No. 16-13-00060-Pi).
Предметные рубрики: THERMAL-EXPANSION
BETA-FESI2 FILMS
GROWTH
SILICON
DIFFRACTION
Аннотация: A pure crystallogeometrical approach is proposed for predicting orientation relationships, habit planes and atomic structures of the interfaces between phases, which is applicable to systems of low-symmetry phases and epitaxial thin film growth. The suggested models are verified with the example of epitaxial growth of α-, γ- and β-FeSi2 silicide thin films on silicon substrates. The density of near-coincidence sites is shown to have a decisive role in the determination of epitaxial thin film orientation and explains the superior quality of β-FeSi2 thin grown on Si(111) over Si(001) substrates despite larger lattice misfits. Ideal conjunctions for interfaces between the silicide phases are predicted and this allows for utilization of a thin buffer α-FeSi2 layer for oriented growth of β-FeSi2 nanostructures on Si(001). The thermal expansion coefficients are obtained within quasi-harmonic approximation from the DFT calculations to study the influence of temperature on the lattice strains in the derived interfaces. Faster decrease of misfits at the α-FeSi2(001)||Si(001) interface compared to γ-FeSi2(001)||Si(001) elucidates the origins of temperature-driven change of the phase growing on silicon substrates. The proposed approach guides from bulk phase unit cells to the construction of the interface atomic structures and appears to be a powerful tool for the prediction of interfaces between arbitrary phases for subsequent theoretical investigation and epitaxial film synthesis.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov I. A., Bondarev I. A., Romanenko A. I.
Заглавие : α-FeSi2 as a buffer layer for β-FeSi2 growth: analysis of orientation relationships in silicide/Silicon, silicide/silicide heterointerfaces
Коллективы : Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science [18-42-243013]; Ministry of Education and Science of the Russian FederationMinistry of Education and Science, Russian Federation; Siberian Branch of the Russian Academy of SciencesRussian Academy of Sciences [II.8.70]
Место публикации : J. Surf. Ingestig. - 2020. - Vol. 14, Is. 4. - P.851-861. - ISSN 1027-4510, DOI 10.1134/S1027451020040357. - ISSN 1819-7094(eISSN)
Примечания : Cited References: 74. - The work was supported by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research project no. 18-42-243013. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70)
Предметные рубрики: β-FeSi2 thin-films
Thermal-expansion
Phase-transformation
Аннотация: In this manuscript, we attempt to clarify the capability of utilisation of α-FeSi2 nanocrystals as a buffer layer for growth of monocrystalline/high-quality β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Iron silicides-based nanostructures have a wide spectrum of possible industrial applications in different fields. Mainly, interest in these functional materials is caused by their ecological safety and Earth’s core abundance that give us the opportunity for greener future with highly effective electronic devices. β-FeSi2 phase due to its allowed direct transition with energy close to 0.87 eV can be used as active material in light emission diodes (LED). Utilisation of buffer layers between silicon substrate and give one more tool to engineer the band structure of semiconducting β‑FeSi2 phase. We attempt to clarify the capability of the utilisation of the α-FeSi2 phase as a buffer layer for the growth of β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Possible β-FeSi2/α-,γ-,s-FeSi2/Si orientation relationships (ORs) and habit planes were examined with crystallogeometrical approaches and compared with β-FeSi2/Si ones. The lowest interplanar and interatomic spacing misfits between silicon lattice and a silicide one are observed for the pair of s-FeSi2{011}[200]/Si{022}[100] at room temperature and equal to –0.57%. The least interplanar and interatomic spacing misfit of 1.7 and 1.88%, respectively, for β-FeSi2/Si, can be decreased as low as –0.67 (interplanar) and 0.87 (interatomic) % by placing an α-FeSi2 layer between silicon and β-FeSi2 phase. It is stated that the growth of metastable γ-FeSi2 is also favourable on silicon due to low interplanar and interatomic spacing misfit (–0.77%) and a higher density of NCS in comparison with s-FeSi2. Design and technological procedure for the synthesis of possible β-FeSi2/α-FeSi2/Si heterostructure have been proposed based on the results obtained.
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