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Effect of the diamagnetic dilution on the magnetic ordering and electrical conductivity in the Co3O2BO3 : Ga ludwigite / N. B. Ivanova [et al.] // Phys. Solid State. - 2012. - Vol. 54, Is. 11. - P. 2212–2221, DOI 10.1134/S1063783412110133. - Cited References: 30. - This study was supported by the Council on Grants from the President of the Russian Federation for Support of Leading Scientific Schools of the Russian Federation (grant no. NSh-1044.2012.2) and the Russian Foundation for Basic Research (project nos. 12-02-00175-a and 12-02-00470-a). . - ISSN 1063-7834

РУБ Physics, Condensed Matter

Аннотация: Single crystals of cobalt ludwigite Co3O2BO3 with diamagnetic substitution of Ga3+ ions for a part of the cobalt ions have been grown by the flux method. A detailed investigation of the crystal structure and magnetic properties of the compound has been carried out. A preferred character of the occupation of non-equivalent crystallographic positions by gallium has been revealed. It has been found that the effective magnetic moment and the magnetic ordering temperature are decreased compared to those in the original crystal of the Co3O2BO3 ludwigite. It has been noted that the pronounced magnetic anisotropy observed in the crystal lographic ab plane of the original material of the Co3O2BO3 composition disappears in the presence of gallium.

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Публикация на русском языке Влияние диамагнитного разбавления на магнитное упорядочение и электрическую проводимость в людвигите Co3O2BO3:Ga [Текст] / Н. Б. Иванова [и др.] // Физ. тверд. тела : Физико-технический институт им. А.Ф.Иоффе РАН, 2012. - Т. 54 Вып. 11. - С. 2080-2088

Доп.точки доступа:
Ivanova, N. B.; Иванова, Наталья Борисовна; Platunov, M. S.; Платунов, Михаил Сергеевич; Knyazev, Yu.V.; Князев, Юрий Владимирович; Kazak, N. V.; Казак, Наталья Валерьевна; Bezmaternykh, L. N.; Безматерных, Леонард Николаевич; Vasiliev, A. D.; Васильев, Александр Дмитриевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Nizhankovskii, V. I.
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Magnetic and electrical properties of bismuth cobaltite Bi24(CoBi)O40 with charge ordering / S. S. Aplesnin [и др.] // Phys. Solid State. - 2012. - Vol. 54, Is. 10. - P. 2005-2014, DOI 10.1134/S106378341210006X. - Cited References: 22. - This study was supported by the Russian Foundation for Basic Research (project nos. 09-02-92001-NNS_a, 12-02-00125-a, and 11-02-98004-r_sibir'_a) . - ISSN 1063-7834

РУБ Physics + Condensed Matter
Рубрики:
Thermoelectric-power
   Co3O4
   Conductivity
   Transition
Аннотация: The compound Bi24(CoBi)O40 has been synthesized using the solid-phase reaction method. The temperature and field dependences of the magnetic moment in the temperature range 4 K T 300 K and the temperature dependences of the EPR line width and g-factor at temperatures 80 K T 300 K have been investigated. The electrical resistivity and thermoelectric power have been measured in the temperature range 100 K T 1000 K. The activation energy has been determined and the crossover of the thermoelectric power from the phonon mechanism to the electron mechanism with variations in the temperature has been observed. The thermal expansion coefficient of the samples has been measured in the temperature range 300 K T 1000 K and the qualitative agreement with the temperature behavior of the electrical resistivity has been achieved. The electrical and structural properties of the compound have been explained in the framework of the model of the electronic-structure transition with inclusion of the exchange and Coulomb interactions between electrons and the electron-phonon interaction.

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Публикация на русском языке Магнитные и электрические свойства кобальтита висмута Bi24(CoBi)O40 с зарядовым упорядочением [Текст] / С. С. Аплеснин [и др.] // Физ. тверд. тела : Физико-технический институт им. А.Ф.Иоффе РАН, 2012. - Т. 54 Вып. 10. - С. 1882-1890

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Udod, L. V.; Удод, Любовь Викторовна; Sitnikov, M. N.; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Gorev, M. V.; Горев, Михаил Васильевич; Molokeev, M. S.; Молокеев, Максим Сергеевич; Galyas, A. I.; Yanushkevich, K. I.
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Magnetic and thermoelectric properties of the Mn1-X Ni (X) S solid solutions / G. Makovetskii [et al.] // J. Korean Phys. Soc. - 2013. - Vol. 62, Is. 12. - P. 2059-2062, DOI 10.3938/jkps.62.2059. - Cited References: 9. - This study was supported by the Russian Foundation for Basic Research project No. 09-02-92001-NNS_a; No.12-02-90004 Bel_a; No. 12-02-00125_a; No. 11-02-98018 r_sibir_a, F12R-060 . - ISSN 0374-4884

РУБ Physics, Multidisciplinary
Рубрики:
NICKEL SULPHIDE
TRANSITION
Кл.слова (ненормированные):
Antiferromagnetic materials -- Semiconductor conductivity -- Manganese sulphides
Аннотация: The new sulphide Mn1-X Ni (X) S (0 T (N) . The conductivity type change from the hole to the electronic at X > 0.05 is revealed on the basis of the thermoelectric power measurements. The resistivity and thermopower behaviors are explained in terms of the impurity subband formation into MnS electron excitation gap.

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Держатели документа:
Natl Acad Sci Belarus, GO NPTs Mat Sci Ctr, Minsk 220072, Byelarus
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
MF Reshetneva Aircosm Siberian State Univ, Krasnoyarsk 660014, Russia

Доп.точки доступа:
Makovetskii, G.; Аплеснин, Сергей Степанович; Demidenko, O. F.; Galyas, A.; Yanushkevich, K.; Aplesnin, S. S.; Romanova, O. B.; Романова, Оксана Борисовна; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна
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Nonuniform magnetic states and electrical properties of SmXMn1-XS solid solutions / S. S. Aplesnin [et al.] // IEEE Trans. Magn. - 2011. - Vol. 47, Is. 10. - P. 4413-4416, DOI 10.1109/TMAG.2011.2160715. - Cited References: 13 . - ISSN 0018-9464

РУБ Engineering, Electrical & Electronic + Physics, Applied

Кл.слова (ненормированные):
Conductivity -- magnetic semiconductors -- magnetization processes
Аннотация: The real and imaginary parts of magnetic permeability at the three frequencies 100 Hz, 1 kHz and 10 kHz and magnetic moment in magnetic field H = 0.05 T in the SmXMn1-XS(0.1 <= X <= 0.25) solid solutions at the temperatures 5 K-300 K were measured. Magnetization curves were measured in the range of fields -9 T < H < 9 T at the temperatures T = 5 K, 50 K. Non-linear behavior of the magnetization versus field, residual magnetic moment, logarithmic dependence of imaginary parts of the magnetic permeability maximum on frequency and sharp drop of Im(mu) at T < 40 K for compound Sm0.25Mn0.75 S were found. The electrical resistivity of the SmXMn1-X S(0.5 < x < 0.25) solid solution in the range of temperatures 80 K-300 K were measured. Minimum and maximum in the temperature dependence of the resistivity were found respectively at T = 220 K for X = 0.15 and at T = 100 K for X = 0.2 compounds. This behavior is explained a result of the mobility edge movement and the disorder of the deformation and spin density fluctuations with short-range order.

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Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Har'kov, A. M.; Eremin, E. V.; Еремин, Евгений Владимирович; Romanova, O. B.; Романова, Оксана Борисовна; Balaev, D. A.; Балаев, Дмитрий Александрович; Sokolov, V. V.; Соколов В. В.; Pichugin, A. Yu.; IEEE International Magnetics Conference(2011 ; Apr. ; 25-29 ; Taipei, Taiwan)
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Fractal dimension of cluster boundaries in porous polycrystalline HTSC materials / A. A. Bykov [et al.] // Phys. Solid State. - 2012. - Vol. 54, Is. 10. - P. 1947-1950, DOI 10.1134/S1063783412100095. - Cited References: 20 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
CURRENT-VOLTAGE CHARACTERISTICS
   ELECTRICAL-CONDUCTIVITY
   PERCOLATION
   MIXTURES
   MEDIA
   SUPERCONDUCTORS
   TRANSPORT
   SPHERES
Аннотация: The fractal dimension of the boundaries of clusters formed by pores and granules in polycrystalline materials is shown to be determined by the sample density and crystallite sizes. The dependence of the fractal dimension on the density has a maximum. It is shown that the maximum diamagnetic response can be obtained in a porous high-temperature superconductor with a porosity of 50-60% and small crystallite sizes.

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Публикация на русском языке Фрактальная размерность границ кластеров в пористых поликристаллических ВТСП-материалах [Текст] / А. А. Быков [и др.] // Физ. тверд. тела : Физико-технический институт им. А.Ф.Иоффе РАН, 2012. - Т. 54 Вып. 10. - С. 1825-1828

Держатели документа:
[Bykov, A. A.
Terent'ev, K. Yu.
Gokhfeld, D. M.
Petrov, M. I.] Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Bykov, A. A.; Быков, Алексей Анатольевич; Terent'yev, K. Yu.; Терентьев, Константин Юрьевич; Gokhfeld, D. M.; Гохфельд, Денис Михайлович; Petrov, M. I.; Петров, Михаил Иванович
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    Multiband description of optical conductivity in ferropnictide superconductors / O. V. Dolgov [et al.] // J. Supercond. Nov. Magn. - 2013. - Vol. 26, Is. 8. - P. 2637-2640, DOI 10.1007/s10948-013-2150-3 . - ISSN 1557-1939
   Перевод заглавия: Многозонное описание оптической проводимости в ферропниктидных сверхпроводниках
Кл.слова (ненормированные):
Effects of disorder -- Multiband superconductivity -- Optical conductivity -- Effects of disorder -- Experimental datum -- Multi-band superconductors -- Multiband superconductivity -- Novel superconductor -- Order parameter symmetry -- Paramagnetic impurity -- Single-band superconductors -- Optical conductivity -- Paramagnetism -- Superconductivity -- Superconducting materials
Аннотация: We study optical properties of the multiband superconductors with an s В± order parameter symmetry. By comparing results of our theory with experimental data on optical conductivity for Ba0.68K 0.32Fe2As2 single crystals, we show that satisfactory description of the novel superconductors can be obtained only considering a strong electron-boson coupling. We reexamine the effect of disorder and demonstrate that multiband superconductors are more robust with respect to it than naively expected by simple analogy with paramagnetic impurities in single-band superconductors. Moreover, disorder may give rise to new effects, in particular to a phase transition s В±>s ++. We discuss how the systematic study of disorder impact on the density of states and the optical conductivity may provide information on the underlying order parameter structure. В© 2013 Springer Science+Business Media New York.

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Держатели документа:
Max Planck Inst Solid State Res, Stuttgart, Germany
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Krasnoyarsk, Russia
Fac Sci & Technol, Enschede, Netherlands
MESA Inst Nanotechnol, Enschede, Netherlands

Доп.точки доступа:
Dolgov, O. V.; Efremov, D. V.; Korshunov, M. M.; Коршунов, Максим Михайлович; Charnukha, A.; Boris, A. V.; Golubov, A. A.
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Epov, M. I.
A temperature-dependent dielectric model for water- and oil-containing rocks in the frequency range from 0.5 to 15 GHz / M. I. Epov, I. V. Savin, V. L. Mironov // Russ. Geol. Geophys. - 2012. - Vol. 53, Is. 7. - P. 698-703, DOI 10.1016/j.rgg.2012.05.008. - Cited References: 17 . - ISSN 1068-7971

РУБ Geosciences, Multidisciplinary
Рубрики:
MOIST SOILS
POLARIZATION PROCESSES
PERMITTIVITY METHOD
Кл.слова (ненормированные):
dielectric permittivity -- effective conductivity -- water-containing rocks -- temperature-dependent dielectric model
Аннотация: Dielectric spectra of water-containing rocks forming a mineral framework of the oil-saturated bed (clay minerals amount to˂16%) were measured in the frequency range from 500 MHz to 15 GHz and in the temperature range from 20 to 80 °C. A physical model for computing spectra of the dielectric permittivity and effective conductivity of the studied rocks has been elaborated. Its input parameters are water (salt solution) content and temperature. The errors of the computed spectra relative to the measured ones are estimated.

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Публикация на русском языке Эпов, Михаил Иванович. Диэлектрическая температурная модель влажных нефтесодержащих пород в диапазоне частот от 0.5 до 15 ГГц [Текст] / М. И. Эпов, И. В. Савин, В. Л. Миронов // Геол. и геофиз. - 2012. - Т. 53 № 7. - С. 912-919

Держатели документа:
[Epov, M. I.] Russian Acad Sci, Siberian Branch, AA Trofimuk Inst Petr Geol & Geophys, Novosibirsk 630090, Russia
[Savin, I. V.
Mironov, V. L.] Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
[Mironov, V. L.] Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 66014, Russia

Доп.точки доступа:
Savin, I. V.; Савин, Игорь Викторович; Mironov, V. L.; Миронов, Валерий Леонидович
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Multiband model for the dynamical conductivity of superconducting pnictides manifestation of impurity induced s±às++ transition / D. V. Efremov [et al.] // International conferences «Phase separation and Superstripes in High Temperature Superconductors and Related Materials (Superstripes-2012)». - 2012. - P. 127
Аннотация: The multiband (4 x4 bands) model and its reduction to the effective two-band model taking into account the strong interaction with intermediate spin-fluctuations have been successively applied to the description of the properties of Ba1-xKxFeAs2. On the base of this approach and using the extension of the formalism developed for the multiband system MgB2 we have calculated free energy and frequency dependent optical complex conductivity \ sigma ( \omega ,T) in the superconducting as well as the normal states of pnictides. An application of the presented approach to the ellipsometry data for single crystals of Ba1-xKxFeAs2 allows to describe some experimental features connected to multigap nature and strong coupling effects. Effects of rather strong nonmagnetic impurities beyond the Born approximation which can lead to the transitions in the superconducting order parameter S+- - S++ were investigated.

Программа конференции

Доп.точки доступа:
Efremov, D. V.; Korshunov, M. M.; Коршунов, Максим Михайлович; Golubov, A. A.; Dolgov, O. V.; Ettore Majorana Foundation, Centre for Scientific Culture; Rome International Center for Materials Science; International School of Solid State Physics; "Phase separation and Superstripes in High Temperature Superconductors and Related Materials", Int. Conf. (55 ; 2012 ; July ; 11-17 ; Erice (Sicily), Italy)
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    Влияние фотонной обработки и температуры на проводимость In2O3 пленок, полученных автоволновым окислением / И. А. Тамбасов [и др.] // Вестник СибГАУ. - 2013. - № 3. - С. 103-106. - Работа выполнена частично при финансовой поддержке ФЦП «Исследования и разработки по приоритетным направлениям развития научно-технологичного комплекса России на 2007-2013 годы» (госконтракт № 14.513.11.0023), а также Министерства образования и науки Российской Федерации (договор № 02.G25.31.0043) . - ISSN 1816-9724
   Перевод заглавия: The impact of the photon processing and temperature on the conductivity of In2O3 films produed with autowave oxidation
Кл.слова (ненормированные):
ТОНКИЕ ПЛЕНКИ -- ОКСИД ИНДИЯ -- АВТОВОЛНОВОЕ ОКИСЛЕНИЕ -- УЛЬТРАФИОЛЕТОВОЕ ОБЛУЧЕНИЕ -- THIN FILMS -- INDIUM OXIDE -- AUTO-WAVE OXIDATION -- ULTRAVIOLET IRRADIATION
Аннотация: Пленки оксида индия были синтезированы автоволновой реакцией окисления на покровном стекле, кварце и монокристалле MgO. Толщина пленки измерялась с помощью режима «cross-section» сканирующего электронного микроскопа и составляла ~300 нм. Оптическая ширина запрещенной зоны оксида индия была ~3.5 эВ. Исследования сопротивления In2O3 пленки от температуры в теневых условиях показали, что при нагревании до 100 0С сопротивление увеличивается на ~10 %. Показано, что при фотооблучении происходит резкое уменьшение электрического сопротивления пленок, максимальное изменение которого составило 52 % при комнатной температуре. Определены две скорости релаксации сопротивления пленок после прекращения облучения 15 Ом/сек первые 30 сек и 7 Ом/сек в остальное время. Сделано предположение, что фотовосстановление является доминирующим механизмом, ответственным за изменения проводимости пленок.
Indium oxide films were synthesized by auto-wave oxidation reaction on the cover glass, quartz and single crystal MgO. The film thickness was measured with a mode «cross-section» scanning electron microscope and was ~ 300 nm. Optical band gap of indium oxide was ~3.5 eV. The study of In2O3 film resistance versus temperature in the dark conditions showed that when heated to 100 °C the resistance increases by about 10 %. It is shown that the_ films electric resistance decreases sharply under photo radiation and the maximum change was 52 % at room temperature. The two film resistance relaxation rates after irradiation have been determined to be 15 Ohm/s the first 30 seconds and 7 Оhm/s f for the rest, respectively. On the basis of the above stated the authors suggest that the photo reduction is the dominant mechanism responsible for the changes in conductivity of In 2O 3 films.

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Держатели документа:
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Тамбасов, Игорь Анатольевич; Tambasov, I.A.; Немцев, Иван Васильевич; Nemtsev, I.V.; Савранский, Д. С.; Мацынин, Алексей Александрович; Matsynin, A.A.; Ежикова, Е. В.
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10.

Magnetic-field- and bias-sensitive conductivity of a hybrid Fe/SiO 2/p-Si structure in planar geometry / N. V. Volkov [et al.] // J. Appl. Phys. - 2011. - Vol. 109, Is. 12. - Ст. 123924. - P. , DOI 10.1063/1.3600056 . - ISSN 0021-8979
Кл.слова (ненормированные):
Channel switching -- Comparative analysis -- Fe films -- Fe layer -- Ferromagnetic films -- High temperature -- Hybrid structure -- Inversion layer -- Metal-insulator-semiconductors -- Negative magneto-resistance -- Planar geometries -- Positive magnetoresistance -- Schottky barriers -- Semiconductor substrate -- Temperature variation -- Weak localization -- Critical currents -- Electric resistance -- Ferromagnetic materials -- Geometry -- Magnetic fields -- Magnetoelectronics -- Magnetoresistance -- Metal insulator boundaries -- Metal insulator transition -- MIS devices -- Schottky barrier diodes -- Silicon -- Silicon compounds -- Switching circuits -- Transport properties -- Semiconducting silicon
Аннотация: Pronounced magnetic-field- and bias-sensitive features of the transport properties of a Fe/SiO2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the metal-insulator-semiconductor (MIS) transition with a Schottky barrier near the interface between SiO2 and p-Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and a magnetic field. Positive magnetoresistance of the structures at high temperatures is determined, most likely, by disorder-induced weak localization. In the structure with the gap, negative magnetoresistance is observed at certain temperature and bias. Its occurrence should be attributed to an inversion layer formed in the semiconductor near the SiO2/p-Si interface when MIS transition is in the inversion regime. В© 2011 American Institute of Physics.

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Держатели документа:
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, 660036, Russian Federation
Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Eremin, E. V.; Еремин, Евгений Владимирович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Zharkov, S. M.; Жарков, Сергей Михайлович
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