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    Growth, optical and microstructural properties of PbB4O7 plate crystals / A. I. Zaitsev [et al.] // Opt. Mater. - 2014. - Vol. 37. - P. 298–301, DOI 10.1016/j.optmat.2014.06.012. - Cited References: 42. - This study is supported by SB RAS via Projects 28.14 and 43.14, and the Grant of the President of the Russian Federation for the support of leading scientific schools SS-4828.2012.2 and by PSB RAS, Grant 2.5.2. V.V.A. gratefully acknowledge the Ministry of Education and Science of the Russian Federation for financial support . - ISSN 0925-3467. - ISSN 1873-1252
   Перевод заглавия: Рост, оптические и микроструктурные свойства пластинчатых кристаллов PbB4O7

РУБ Materials Science, Multidisciplinary + Optics
Рубрики:
LEAD TETRABORATE
   SINGLE-CRYSTAL
   SUSCEPTIBILITIES
   ANISOTROPY
   STRONTIUM
   SURFACES
   RAMAN
Кл.слова (ненормированные):
PbB4O7 -- Czochralski growth -- Facet -- RHEED -- AFM
Аннотация: Centimeter-sized optical quality plate-like PbB4O7 crystals have been grown by Czochralski method. The fundamental absorption edge has been found at 237 nm (corresponding bandgap 5.75 eV) with the distinct sideband protruding up to 300 nm. The crystals are well faceted with the (100), (010) and (101) planes, (100) surfaces being mostly developed. The etching in diluted nitric acid (5 wt.%) at the temperature of 90 °C have been used to reveal the defect structure and remove melt residuals. The (100) surface shows the presence of etching pits and twin boundaries. The Kikuchi line pattern and developed microrelief with the roughness of ~8 nm have been observed by RHEED and AFM, respectively.

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Держатели документа:
SB RAS, Akademgorodok, Kirensky Inst Phys, Lab Crystal Phys, Krasnoyarsk 690036, Russia
Akademgorodok, SB RAS, Kirensky Inst Phys, Lab Coherent Opt, Krasnoyarsk 690036, Russia
Russian Acad Sci, Inst Semicond Phys, Lab Nanodiagnost & Nanolithog, SB RAS, Novosibirsk 630090, Russia
Russian Acad Sci, Inst Semicond Phys, Lab Opt Mat & Struct, SB RAS, Novosibirsk 630090, Russia
Tomsk State Univ, Funct Elect Lab, Tomsk 634050, Russia
Novosibirsk State Univ, Novosibirsk 630090, Russia

Доп.точки доступа:
Zaitsev, A. I.; Зайцев, Александр Иванович; Aleksandrovsky, A. S.; Александровский, Александр Сергеевич; Kozhukhov, A. S.; Pokrovsky, L. D.; Atuchin, V. V.; SB RAS [28.14, 43.14]; President of the Russian Federation for the support of leading scientific schools [SS-4828.2012.2]; PSB RAS [2.5.2]; Ministry of Education and Science of the Russian Federation
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Structural and electronic parameters of ferroelectric K3WO3F3 / V. V. Atuchin [et al.] // Solid State Commun. - 2010. - Vol. 150, Is. 43-44. - P. 2085-2088, DOI 10.1016/j.ssc.2010.09.023. - Cited References: 34. - This study was partly supported by RFBR (Grant 09-02-00062) and SB RAS (Grant 34). . - ISSN 0038-1098

РУБ Physics, Condensed Matter
Рубрики:
CORE-LEVEL SPECTROSCOPY
   PHASE-TRANSITIONS
   RHEED ANALYSIS
   SURFACE
   OXYFLUORIDE
   ELPASOLITE
   (NH4)(2)KWO3F3
   SUBSTITUTION
   TEMPERATURE
   DIFFRACTION
Кл.слова (ненормированные):
Ferroelectrics -- Chemical synthesis -- Electronic structure -- Photoelectron spectroscopies
Аннотация: The low-temperature ferroelectric G2 polymorph of K3WO3F3 oxyfluoride is formed by chemical synthesis. The electronic parameters of G2-K3WO3F3 have been measured by X-ray photoelectron spectroscopy under excitation with Al K alpha radiation (1486.6 eV). Detailed spectra have been recorded for all element core levels and Auger lines. The chemical bonding effects in the WO3 F-3 and WO6 octahedrons are considered by using the binding energy difference Delta BE(O-W) = BE(O 1s) BE(W 4f(7/2)). (C) 2010 Elsevier Ltd. All rights reserved.

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Держатели документа:
[Atuchin, V. V.] SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia
[Gavrilova, T. A.] SB RAS, Inst Semicond Phys, Lab Nanolithog & Nanodiagnost, Novosibirsk 630090, Russia
[Kesler, V. G.] SB RAS, Inst Semicond Phys, Lab Phys Principles Integrated Microelect, Novosibirsk 630090, Russia
[Molokeev, M. S.
Aleksandrov, K. S.] SB RAS, Inst Phys, Lab Crystal Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Atuchin, V. V.; Gavrilova, T. A.; Kesler, V. G.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Aleksandrov, K. S.; Александров, Кирилл Сергеевич
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    Low-temperature synthesis and structural properties of ferroelectric K 3WO3F3 elpasolite / V. V. Atuchin [et al.] // Chem. Phys. Lett. - 2010. - Vol. 493, Is. 1-3. - P. 83-86, DOI 10.1016/j.cplett.2010.05.023. - Cited References: 37 . - ISSN 0009-2614
Рубрики:
PEROVSKITE-LIKE OXYFLUORIDES
   CORE-LEVEL SPECTROSCOPY
   PHASE-TRANSITIONS
   SOLID-STATE
   ELECTRON-DIFFRACTION
   DIFFUSE-SCATTERING
   RHEED ANALYSIS
   POLAR
   BEHAVIOR
   (NH4)(3)TIOF5
Кл.слова (ненормированные):
Chemical synthesis -- Elpasolite -- Ferroelectric phase transition -- Fluorine atoms -- Low temperature synthesis -- Low temperatures -- Oxyfluorides -- Partial ordering -- Room temperature -- SEM -- Space Groups -- Structure parameter -- XRD -- Chemical properties -- Ferroelectric materials -- Ferroelectricity -- Fluorine -- Oxygen -- Phase transitions -- Rietveld method -- Single crystals -- Synthesis (chemical) -- X ray photoelectron spectroscopy -- X ray powder diffraction -- Scanning electron microscopy
Аннотация: Low-temperature ferroelectric G2 polymorph of K3WO 3F3 has been prepared by chemical synthesis. Structural and chemical properties of the final product have been evaluated with X-ray powder diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). Structure parameters of G2-K 3WO3F3 are refined by the Rietveld method from XRD data measured at room temperature (space group Cm, Z = 2, a = 8.7350(3), b = 8.6808(5), c = 6.1581(3), ? = 135.124(3), V = 329.46(3) 3; RB = 2.47%). Partial ordering of oxygen and fluorine atoms has been found over anion positions. Mechanism of ferroelectric phase transition in A2BMO3F3 oxyfluorides is discussed. В© 2010 Elsevier B.V. All rights reserved.

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Держатели документа:
Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russian Federation
Laboratory of Nanolithography and Nanodiagnostics, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russian Federation
Laboratory of Physical Principles for Integrated Microelectronics, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russian Federation
Laboratory of Crystal Physics, Institute of Physics, SB RAS, Krasnoyarsk 660036, Russian Federation

Доп.точки доступа:
Atuchin, V. V.; Gavrilova, T. A.; Kesler, V. G.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Aleksandrov, K. S.; Александров, Кирилл Сергеевич
}
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Crystal structure investigation of Cr2GeC MAX-phase nanofilms by RHEED / S. A. Lyashchenko, T. A. Andryushchenko, I. A. Yakovlev, S. N. Varnakov // V International Baltic Conference on Magnetism. IBCM : Book of abstracts. - 2023. - P. 125. - Cited References: 2. - РНФ № 21-12-00226

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS

Доп.точки доступа:
Lyashchenko, S. A.; Лященко, Сергей Александрович; Andryushchenko, T. A.; Yakovlev, I. A.; Яковлев, Иван Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; International Baltic Conference on Magnetism(5 ; 2023 ; Aug. 20-24 ; Svetlogorsk, Russia); Балтийский федеральный университет им. И. Канта
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