Библиотека института физики им. Л.В. Киренского СО РАН

Главная

Базы данных

Труды сотрудников ИФ СО РАН - результаты поиска

Вид поиска

Каталог книг и брошюр библиотеки ИФ СО РАН

Каталог журналов библиотеки ИФ СО РАН

Труды сотрудников ИФ СО РАН

Область поиска

Формат представления найденных документов:
полный	информационный	краткий

Отсортировать найденные документы по:
автору	заглавию	году издания	типу документа

Поисковый запрос: (<.>S=BREAKDOWN<.>)

Общее количество найденных документов : 3
Показаны документы с 1 по 3

Wannier-Stark resonances in semiconductor superlattices / M. . Gluck [et al.] // Phys. Rev. B. - 2002. - Vol. 65, Is. 11. - Ст. 115302, DOI 10.1103/PhysRevB.65.115302. - Cited References: 22 . - ISSN 1098-0121

РУБ Physics, Condensed Matter
Рубрики:
ELECTRIC-FIELD
   STATES
   LADDERS
   BREAKDOWN
   BLOCH
   LOCALIZATION
Аннотация: Wannier-Stark states for semiconductor superlattices in strong static fields, where the interband Landau-Zener tunneling cannot be neglected, are rigorously calculated. The lifetime of these metastable states was found to show multiscale oscillations as a function of the static field, which is explained by an interaction with above-barrier resonances. An equation, expressing the absorption spectrum of semiconductor superlattices in terms of the resonance Wannier-Stark states, is obtained and used to calculate the absorption spectrum in the region of high static fields.

WOS,
Читать в сети ИФ
Держатели документа:
Univ Kaiserslautern, Fachbereich Phys, D-67653 Kaiserslautern, Germany
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Gluck, M.; Kolovsky, A. R.; Коловский, Андрей Радиевич; Korsch, H. J.; Zimmer, F.
}
Найти похожие

Magnetic-field-driven electron transport in ferromagnetic/ insulator/ semiconductor hybrid structures / N. V. Volkov [et al.] // J. Magn. Magn. Mater. - 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P. 140-143, DOI 10.1016/j.jmmm.2016.12.092. - Cited References:27. - This study was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund, Project nos. 16-42-242036 and 16-42-243046, the Russian Ministry of Education and Science, state assignment no. 16.663.2014K. . - ISSN 0304-8853. - ISSN 1873-4766

РУБ Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
SPINTRONICS
   BREAKDOWN
   SILICON
   SPIN
Кл.слова (ненормированные):
Hybrid structures -- Magnetoresistance -- Magnetoimpedance -- Photovoltage
Аннотация: Extremely large magnetotransport phenomena were found in the simple devices fabricated on base of the Me/SiO2/p-Si hybrid structures (where Me are Mn and Fe). These effects include gigantic magnetoimpedance (MI), dc magnetoresistance (MR) and the lateral magneto-photo-voltaic effect (LMPE). The MI and MR values exceed 10(6)% in magnetic field about 0.2 T for Mn/SiO2/p-Si Schottky diode. LMPE observed in Fe/SiO2/p-Si lateral device reaches the value of 10(4)% in a field of 1 T. We believe that in case with the Schottky diode MR and MI effects are originate from magnetic field influence on impact ionization process by two different ways. First, the trajectory of the electron is deflected by a magnetic field, which suppresses acquisition of kinetic energy and therefore impact ionization. Second, the magnetic field gives rise to shift of the acceptor energy levels in silicon to a higher energy. As a result, the activation energy for impact ionization significantly increases and consequently threshold voltage rises. Moreover, the second mechanism (acceptor level energy shifting in magnetic field) can be responsible for giant LMPE.

Смотреть статью,
WOS,
Читать в сети ИФ

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-242036, 16-42-243046]; Russian Ministry of Education and Science [16.663.2014K]; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН
}
Найти похожие

    Ignatchenko, V. A.
    Fine structure of the crossing resonance spectrum of wavefields in an inhomogeneous medium / V. A. Ignatchenko, D. S. Polukhin // J. Exp. Theor. Phys. - 2020. - Vol. 130, Is. 3. - P. 358-369, DOI 10.1134/S1063776120010033. - Cited References: 37 . - ISSN 1063-7761. - ISSN 1090-6509
Рубрики:
SUPERCONDUCTING CRITICAL-TEMPERATURE
   ELECTRON
   BREAKDOWN
   SPIN
Аннотация: The crossing resonance of two wavefields m(x, t) and u(x, t) of different natures in an inhomogeneous medium with zero mean value of the coupling parameter η between fields has been studied. The stages of formation of the fine structure of the crossing resonance have been analyzed. It has been shown within the model of independent crystallites that the removal of the degeneracy of eigenfrequencies of these fields at the crossing resonance point has a threshold character in the coupling parameter and occurs under the condition η ηc, where ηc = |Γu – Γm|/2, Γu and Γm are the relaxation parameters of the corresponding wavefields. At η ηc, each random implementation of the Green’s functions G~′′mm and G~′′uu of wavefields has the form of two resonance peaks with the same half-width (Γu + Γm)/2 spaced by the interval 2η; this form is standard for crossing resonances. At η ηc, the functions G~′′mm and G~′′uu are different: if Γu Γm, the function G~′′mm has the form of a narrow resonance peak at ω = ωr, whereas the function G~′′uu has the form of a broader resonance peak split at the top by a narrow antiresonance. Averaging over regions where η ηc leads to the formation of a broad resonance with a resonance line half-width of about η2〉1/2 on the both averaged Green’s functions, which is due to the stochastic distribution of resonance frequencies. Averaging over regions where η ηc results in the sharpening of a resonance peak on the function G′′mm and an antiresonance peak on the function G′′uu at the same frequency ω vu at the first and second crossing points, respectively.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ

Публикация на русском языке Игнатченко, Вальтер Алексеевич. Тонкая структура спектра кроссинг-резонанса волновых полей в неоднородной среде [Текст] / В. А. Игнатченко, Д. С. Полухин // Журн. эксперим. и теор. физ. - 2020. - Т. 157 Вып. 3. - С. 428-441

Держатели документа:
Russian Acad Sci, Siberian Branch, Krasnoyarsk Sci Ctr, Kirensky Inst Phys,Fed Res Ctr, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Polukhin, D. S.; Полухин, Дмитрий Сергеевич; Игнатченко, Вальтер Алексеевич
}
Найти похожие