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Response of a manganite-based magnetic tunnel structure to microwave radiation / N. V. Volkov [et al.] // J. Phys. D. - 2012. - Vol. 45, Is. 25. - Ст. 255301, DOI 10.1088/0022-3727/45/25/255301. - Cited References: 20. - This study was supported by the Russian Foundation for Basic Research, project no 11-02-00367-a; the Presidium of the Russian Academy of Sciences, program Fundamentals for Basic Research of Nanotechnology and Nanomaterials, project no 21.1; the Division of Physical Sciences of the Russian Academy of Sciences, program Spin-Dependent Effects in Solids and Spintronics, project no 2.4.4.1; the Siberian Branch of the Russian Academy of Sciences, integration projects nos 5 and 134; and the Federal target program Scientific and Pedagogical Personnel of Innovative Russia (State contract no NK-556P_15). . - ISSN 0022-3727

РУБ Physics, Applied
Рубрики:
IDENTICAL METALS
   JUNCTIONS
   RECTIFICATION
   SPINTRONICS
   MECHANISM
Аннотация: We demonstrate that a magnetic tunnel structure irradiated by microwaves can generate a typical voltage signal due to the rectification effect. We performed measurements in current-in-plane geometry when a current flows parallel to the interfaces in the structure. The value of the microwave-induced voltage strongly depends on the bias current and can be driven by a magnetic field. The rectification effect is discussed both in classical terms of nonlinearity of the current-voltage characteristics and within the mechanism involving the interplay between the spin-polarized current and the magnetization dynamics in the magnetic tunnel structure.

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Держатели документа:
[Volkov, N. V.
Rautskiy, M. V.
Eremin, E. V.
Patrin, G. S.
Kim, P. D.] Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Krasnoyarsk 660036, Russia
[Volkov, N. V.
Eremin, E. V.] Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
[Patrin, G. S.] Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia
[Lee, C. G.] Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South Korea

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Rautskiy, M. V.; Рауцкий, Михаил Владимирович; Eremin, E. V.; Еремин, Евгений Владимирович; Patrin, G. S.; Патрин, Геннадий Семёнович; Kim, P. D.; Ким, Петр Дементьевич; Lee, C. G.
}
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Transport properties of HTSC plus Ba(Pb, Met)O-3 composites as functions of the electrical and magnetic characteristics of nonsuperconducting components / M. I. Petrov [et al.] // Phys. Solid State. - 2000. - Vol. 42, Is. 5. - P. 810-815, DOI 10.1134/1.1131294. - Cited References: 27 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
HIGH-TEMPERATURE SUPERCONDUCTORS
   CURRENT-VOLTAGE CHARACTERISTICS
   NORMAL-METAL LAYER
   WEAK LINKS
   JUNCTIONS
   SCATTERING
   BAPB1-XBIXO3
   TRANSITION
   IMPURITIES
   BREAKING
Аннотация: Composites simulating a network of weak metallic links and consisting of a classic 1-2-3 HTSC and a BaPbO3 metal oxide with incorporated Sn, Ni, and Fe impurities have been prepared. Experimental resistivity, magnetic, and Mossbauer studies of the BaPb(0.9)Met(0.1)O(3) nonsuperconducting components are presented. The transport properties of the HTSC + BaPb(0.9)Met(0.1)O(3) composites have been investigated. The superconducting properties of the composites are observed to be suppressed, both when the carrier mean free path in nonsuperconducting components with tin impurities decreases, and as a result of an additional interaction of the magnetic moments of (Fe, Ni) impurities with the spins of supercurrent carriers. The experimental temperature dependences of the composite critical current are analyzed in terms of the de Gennes theory for the superconductor-normal metal-superconductor structures. (C) 2000 MAIK "Nauka/Interperiodica".

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Держатели документа:
Russian Acad Sci, Siberian Div, Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Petrov, M. I.; Петров, Михаил Иванович; Balaev, D. A.; Балаев, Дмитрий Александрович; Ospishchev, S. V.; Оспищев С. В.; Aleksandrov, K. S.; Александров, Кирилл Сергеевич
}
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Applicability of the theory based on Andreev reflection to the description of experimental current-voltage characteristics of polycrystalline HTSC plus normal metal composites / M. I. Petrov [et al.] // Physica C. - 1999. - Vol. 314, Is. 1-2. - P. 51-54, DOI 10.1016/S0921-4534(99)00151-3. - Cited References: 19 . - ISSN 0921-4534

РУБ Physics, Applied
Рубрики:
WEAK LINKS
JUNCTIONS
FILMS
Кл.слова (ненормированные):
YBaCuO + BaPbO3 composites -- network of weak S-N-S links -- current-voltage characteristic
Аннотация: Measurements of current-voltage characteristics (CVC) of Y3/4Lu1/4Ba2,Cu3O7 + BaPbO3 and Y3/4Lu1/4Ba2Cu3O7 +BaPb0.9Sn0.1O3 composites modelling network of superconducting-normal metal-superconducting (S-N-S) junctions in effectively 'clean' and 'dirty' limits, respectively, have been performed. Essential difference of CVCs for these composites is observed in spite of the identical preparation technique and experimental conditions. It is shown that the theory for S-N-S junctions [R. Kummel, U. Gunsenheimer, R. Nicolsky, Phys. Rev. B, 42 (1990) 3932] well describes the experimental CVCs of the composites in both cases. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

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Держатели документа:
LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Petrov, M. I.; Петров, Михаил Иванович; Balaev, D. A.; Балаев, Дмитрий Александрович; Gokhfeld, D. M.; Гохфельд, Денис Михайлович; Ospishchev, S. V.; Оспищев С. В.; Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Aleksandrov, K. S.; Александров, Кирилл Сергеевич
}
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Transport properties of high-temperature superconductor plus semiconductor composites with different carrier concentration / M. I. Petrov [et al.] // Phys. Solid State. - 1997. - Vol. 39, Is. 5. - P. 735-740, DOI 10.1134/1.1129959. - Cited References: 26 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
CRITICAL CURRENTS
WEAK LINKS
JUNCTIONS
Аннотация: Results are presented of an experimental study of the temperature dependence of the electrical resistivity rho(T), critical current density J(c)(T), and current-voltage characteristics of polycrystalline composites based on the high-temperature superconductor Y3/4Lu1/4Ba2Cu3O7 and copper oxide with different lithium doping levels. The experimental temperature dependence of the critical current of composites with varying volume content of the semiconductor ingredient and varying charge carrier concentration are found to be in qualitative agreement with theory which takes account of Andreev reflection of the carriers at the S-Sm and Sm-S surfaces of the S-Sm-S Josephson junction (where S is the superconductor and Sm is the semiconductor). (C) 1997 American Institute of Physics.

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Доп.точки доступа:
Petrov, M. I.; Петров, Михаил Иванович; Balaev, D. A.; Балаев, Дмитрий Александрович; Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Khrustalev, B. P.; Хрусталев, Борис Петрович; Aleksandrov, K. S.; Александров, Кирилл Сергеевич
}
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    Critical currents in bulk Y3/4Lu1/4Ba2Cu3O7 + BaPbO3 composites / M. I. Petrov [et al.] // Physics Letters, Section A: General, Atomic and Solid State Physics. - 1997. - Vol. 237, Is. 1-2. - P. 85-89
Рубрики:
HIGH-TC-SUPERCONDUCTORS
   WEAK LINKS
   JUNCTIONS
Кл.слова (ненормированные):
Bulk composites -- Critical current density -- Network of weak S-N-S links -- YBaCuO + BaPbO3 -- YBaCuO+BaPbO3 bulk composites -- network of weak S-N-S links -- critical current density
Аннотация: Bulk composites Y3/4Lu1/4Ba2Cu3O7 + BaPbO3 with BaPbO3 volume content of 0-60% have been prepared. Temperature dependences of resistance and critical current density Jc(T) are presented. The best agreement of experimental Jc(T) with theory has been reached for the Gunsenheimer-Schussler-Kummel consideration of superconductor-normal metal-superconductor (S-N-S) junctions in the "clean" limit. В© 1997 Elsevier Science B.V.

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Доп.точки доступа:
Петров, Михаил Иванович; Petrov, M. I.; Balaev, D. A.; Балаев, Дмитрий Александрович; Ospishchev, S. V.; Оспищев С. В.; Шайхутдинов, Кирилл Александрович; Shaikhutdinov, K. A.; Khrustalev, B. P.; Хрусталев, Борис Петрович; Aleksandrov, K. S.; Александров, Кирилл Сергеевич
}
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Val'kov, V. V.
Effects of inelastic spin-dependent electron transport through a spin nanostructure in a magnetic field / V. V. Val'kov, S. V. Aksenov // J. Exp. Theor. Phys. - 2011. - Vol. 113, Is. 2. - P. 266-275, DOI 10.1134/S1063776111060070. - Cited References: 30. - This study was carried out under the program of the Physical Science Department of the Russian Academy of Sciences, Federal Target Program "Scientific and Scientific-Pedagogical Personnel of Innovative Russia in 2009-2013," Interdisciplinary Integration project no. 53 of the Siberian Branch of the Russian Academy of Sciences, and under partial support from the Russian Foundation for Basic Research (project no. 09-02-00127). The research work of one of the authors (S.V.A) was supported by grant no. MK-1300.2011.2 from the President of the Russian Federation. . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
CONDUCTION
ANISOTROPY
JUNCTIONS
Кл.слова (ненормированные):
Antiferromagnetic coupling -- Colossal magnetoresistance effect -- IV characteristics -- Metallic contacts -- Potential profiles -- Spectral characteristics -- Spin dependent transport -- Spin dimer -- Spin moments -- Spin-dependent electron transport -- Spin-flip process -- Tight-binding approximations -- Transmission coefficients -- Antiferromagnetism -- Colossal magnetoresistance -- Current voltage characteristics -- Electric resistance -- Nanostructures -- Transport properties -- Magnetic field effects
Аннотация: The transport properties and current-voltage (I-V) characteristics of a system of spin dimers with antiferromagnetic coupling arranged between metallic contacts are investigated in the tight binding approximation using the Landauer-Buttiker formalism. It is shown that the s-d(f) exchange interaction between the spin moments of the electrons being transported and the spins of the nanostructure leads to the formation of a potential profile as well as its variation due to spin-flip processes. As a result, the spin-dependent transport becomes inelastic, and the transmission coefficient and the I-V characteristic are strongly modified. It is found that the application of a magnetic field induces additional transparency peaks in the spectral characteristic of the system and causes the colossal magnetoresistance effect.

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Держатели документа:
[Val'kov, V. V.
Aksenov, S. V.] Russian Acad Sci, Siberian Branch, Inst Phys, Krasnoyarsk 660036, Russia
[Val'kov, V. V.
Aksenov, S. V.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
[Val'kov, V. V.] Reshetnikov Siberian State Aerosp Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Siberian Federal University, Krasnoyarsk 660041, Russian Federation
Reshetnikov Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation

Доп.точки доступа:
Aksenov, S. V.; Аксенов, Сергей Владимирович; Вальков, Валерий Владимирович
}
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Avramov, P. V.
Effect of carbon network defects on the electronic structure of semiconductor single-wall carbon nanotubes / P. V. Avramov, B. I. Yakobson, G. E. Scuseria // Phys. Solid State. - 2004. - Vol. 46, Is. 6. - P. 1168-1172, DOI 10.1134/1.1767262. - Cited References: 15 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
JUNCTIONS
Аннотация: For a single-wall (14, 0) carbon nanotube, the total density of electronic states of the ideal structure and of some possible defect structures is calculated in the framework of the band theory approach using Gaussian-type orbitals and the approximation of the generalized density gradient. It is shown that allowance for defects of the atomic structure of a nanotube makes it possible to adequately describe the existing experimental data on nanotube electronic structure. In the framework of the same approach, the total density of electronic states is calculated for an intermolecular contact of (5, 5) and (10, 0) single-wall carbon nanotubes formed due to the creation of a 5-7 defect. It is shown that the electronic states related to the contact region and the 5-7 defect lie in vicinity of the Fermi level. (C) 2004 MAIK "Nauka/Interperiodica".

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Держатели документа:
Russian Acad Sci, Siberian Div, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Rice Univ, Ctr Biol & Environm Nanotechnol, Houston, TX 77005 USA
ИФ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk, 660036, Russian Federation
Ctr. for Biol./Environ. Nanotechnol., Rice University, Houston, TX 77005-1892, United States

Доп.точки доступа:
Yakobson, B. I.; Scuseria, G. E.; Аврамов, Павел Вениаминович
}
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Andreev reflection in natural grain boundaries of polycrystalline high-T-c superconductor La1.85Sr0.15CuO4 / M. I. Petrov [et al.] // Phys. Solid State. - 2003. - Vol. 45, Is. 7. - P. 1219-1222, DOI 10.1134/1.1594233. - Cited References: 30 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
CURRENT-VOLTAGE CHARACTERISTICS
   WEAK LINKS
   CHARGE-TRANSPORT
   JUNCTIONS
   CONDUCTIVITY
   HYSTERESIS
   COMPOSITES
   SCATTERING
Аннотация: The temperature evolution of the current-voltage characteristic (CVC) of a "break junction" with metal-type conductivity on the polycrystalline La1.85Sr0.15CuO4 high-temperature superconductor is investigated. The CVC exhibits gap peculiarities and hysteresis, which is observed in the region of negative differential resistance. The experimental results are described well in terms of the Kummel-Gunsenheimer-Nicolsky theory for an S-N-S junction (S is a superconductor, N is a normal metal) this theory takes into account multiple Andreev reflection of quasiparticles. It is shown that the shape of the CVC and the existence and the shape of hysteresis are determined by the ratio of "long" and "short" grain boundaries in the polycrystal under investigation. (C) 2003 MAIK "Nauka / Interperiodica".

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Держатели документа:
Russian Acad Sci, Siberian Div, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk 660036, Russian Federation
Reshetnev Siberian Stt. Aerosp. U., Krasnoyarsk 660014, Russian Federation

Доп.точки доступа:
Petrov, M. I.; Петров, Михаил Иванович; Balaev, D. A.; Балаев, Дмитрий Александрович; Gokhfel'd, D. M.; Гохфельд, Денис Михайлович; Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович
}
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Critical currents in bulk Y3/4Lu1/4Ba2Cu3O7+BaPbO3 composites / M. I. Petrov [et al.] // Phys. Lett. A. - 1997. - Vol. 237, Is. 1-2. - P. 85-89, DOI 10.1016/S0375-9601(97)00694-4. - Cited References: 24 . - ISSN 0375-9601

РУБ Physics, Multidisciplinary
Рубрики:
HIGH-TC-SUPERCONDUCTORS
WEAK LINKS
JUNCTIONS
Кл.слова (ненормированные):
YBaCuO+BaPbO3 bulk composites -- network of weak S-N-S links -- critical current density
Аннотация: Bulk composites Y3/4Lu1/4Ba2Cu3O7 + BaPbO3 with BaPbO3 volume content of 0-60% have been prepared. Temperature dependences of resistance and critical current density J(c)(T) are presented. The best agreement of experimental J(c)(T) with theory has been reached for the Gunsenheimer-Schussler-KUmmel consideration of superconductor-normal metal-superconductor (S-N-S) junctions in the "clean" limit. (C) 1997 Elsevier Science B.V.

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Держатели документа:
LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Petrov, M. I.; Петров, Михаил Иванович; Balaev, D. A.; Балаев, Дмитрий Александрович; Ospishchev, S. V.; Shaihutdinov, K. A.; Khrustalev, B. P.; Хрусталев, Борис Петрович; Aleksandrov, K. S.; Александров, Кирилл Сергеевич
}
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10.

Optically driven conductivity and magnetoresistance in a manganite-based tunnel structure / N. V. Volkov [et al.] // J. Phys. D. - 2009. - Vol. 42, Is. 20. - Ст. 205009, DOI 10.1088/0022-3727/42/20/205009. - Cited References: 13. - This study was supported by the Russian Foundation for Basic Research (Projects Nos 08-02-00259-a and 08-02-00397-a) and the Division of Physical Sciences of the RAS, Programme 'Spin-dependent Effects in Solids and Spintronics' (Project No 2.4.2 of the Siberian Branch of the RAS). . - ISSN 0022-3727

РУБ Physics, Applied
Рубрики:
JUNCTIONS
Кл.слова (ненормированные):
Conducting layers -- Current-in-plane geometry -- Dielectric layer -- Electron hole pairs -- Interband absorption -- Magnetic tunnel junction -- Magnetic tunnels -- Multilayer structures -- Optical radiations -- Photoinduced change -- Potential barriers -- Radiation power density -- Threshold characters -- Tunnel structures -- Electric resistance -- Lanthanum -- Light -- Magnetic field effects -- Magnetoelectronics -- Magnetoresistance -- Manganese compounds -- Oxide minerals -- Photovoltaic effects -- Semiconductor junctions -- Transport properties -- Vehicular tunnels -- Wind tunnels -- Tunnel junctions
Аннотация: In the multilayer structure, La(0.7)Sr(0.3)MnO(3)/depleted manganite layer/MnSi, the photovoltaic effect has been discovered. The depleted manganite layer in the structure is dielectric and serves as a potential barrier between the ferromagnetic conducting La(0.7)Sr(0.3)MnO(3) and MnSi layers by the formation of a magnetic tunnel junction. The photoinduced changes in the transport properties of the magnetic tunnel structure have been observed in the current-in-plane geometry. The changes are reversible and saturate at radiation power densities over 30 mW cm(-2). The photovoltaic effect has a threshold character: it reveals only at h nu > 1.17 eV. Most likely, the effect of optical radiation is related to the formation of electron-hole pairs due to interband absorption of light in the dielectric layer. A photocurrent through the tunnel junctions separating the conducting layers causes a redistribution of the current channels between the conducting layers, which influences the conductivity and the magnetoresistance of the structure.

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Держатели документа:
[Volkov, N. V.
Kim, P. D.
Eremin, E. V.
Patrin, G. S.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Volkov, N. V.
Patrin, G. S.] Siberian Fed Univ, Inst Engn Phys, Krasnoyarsk 660041, Russia
[Lee, C. G.] Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South Korea
[Eremin, E. V.] Siberian State Aerosp Univ, Inst Space Technol, Krasnoyarsk 660014, Russia
ИФ СО РАН
Kirensky Institute of Physics, Russian Academy of Science, Siberian Branch, Krasnoyarsk 660036, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk 660041, Russian Federation
Changwon National University, School of Nano and Advanced Materials Engineering, Gyeongnam 641-773, Changwon, South Korea
Institute of Space Technology, Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Lee, C. G.; Kim, P. D.; Ким, Пётр Дементьевич; Eremin, E. V.; Еремин, Евгений Владимирович; Patrin, G. S.; Патрин, Геннадий Семёнович; Russian Foundation for Basic Research [08-02-00259-a, 08-02-00397-a]; Division of Physical Sciences of the RAS; [2.4.2]
}
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