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Makarov, I. A.
Dependence of the critical temperature of high-temperature cuprate superconductors on hoppings and spin correlations between CuO2 planes / I. A. Makarov, S. G. Ovchinnikov, E. I. Shneider // J. Exp. Theor. Phys. - 2012. - Vol. 114, Is. 2. - P. 329-342, DOI 10.1134/S1063776112020264. - Cited References: 73. - This study was supported in part by the Presidium of the Russian Academy of Sciences (program "Quantum Physics of Condensed Media," project no. 18.7), jointly by the Siberian and Ural branches of the Russian Academy of Sciences (integration projects project no. 40), the Russian Foundation for Basic Research (project no. 09-02-00127), the Presidential Program in Support of Young Scientists in Russia (project no. MK-1683.2010.2), and the federal target program "Specialists" (project no. P891). One of the authors (E.I.Sh.) gratefully acknowledges support from the nonprofit Dynasty foundation. . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
T-J MODEL
   BAND HUBBARD-MODEL
   SINGLE-CRYSTALS
   TRANSITION-TEMPERATURE
   FERMI-SURFACE
   DOPING DEPENDENCE
   THERMAL-EXPANSION
   COPPER OXIDES
   ANISOTROPY
   LA2-XSRXCUO4
Аннотация: The influence of interlayer hoppings on the superconducting transition temperature (T c) in bilayer cuprates has been studied. The parameter of hopping between layers is expressed as t ⊥(k) = t ⊥(cos(k x ) − cos(k y ))2 and treated as a small perturbation for the states of two CuO2 planes described by the t-t′-t″-J* model. In the generalized mean field approximation for dx2−y2{d_{{x. } - {y. }}} symmetry of the superconducting gap, neither the interlayer hopping or exchange interaction, nor the pair hopping between CuO2 layers provides an additional mechanism of Cooper pair formation or an increase in T c. In the concentration dependence of T c, the bilayer splitting of the upper Hubbard band of quasi-holes is manifested as two peaks with temperatures slightly lower than the maximum T c for a single-layer cuprate. Interlayer antiferromagnetic spin correlations suppress bilayer splitting.

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Публикация на русском языке Макаров, Илья Анатольевич. Зависимость критической температуры высокотемпературных сверхпроводников от перескоков и спиновых корреляций между CuO2-плоскостями [Текст] / И. А. Макаров, С. Г. Овчинников, Е. И. Шнейдер // Журн. эксперим. и теор. физ. : Наука, 2012. - Т. 141 Вып. 2. - С. 372-386

Держатели документа:
[Makarov, I. A.
Ovchinnikov, S. G.
Shneider, E. I.] Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Krasnoyarsk 660036, Russia
[Makarov, I. A.
Ovchinnikov, S. G.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
[Shneider, E. I.] Reshetnikov Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Shneider, E. I.; Шнейдер, Елена Игоревна; Макаров, Илья Анатольевич
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Magnetic, magnetoelastic, and spectroscopic properties of TmAl3(BO3)4 / A. A. Demidov [et al.] // J. Exp. Theor. Phys. - 2014. - Vol. 119, Is. 4. - P. 737-744, DOI 10.1134/S106377611410015X. - Cited References: 28. - This study was supported financially by the Russian Foundation for Basic Research (project no. 13-02-12442ofi_m2) and (K.N.B.) by the grant no. MK-1700.2013.2 from the President of the Russian Federation. . - ISSN 1063-7761. - ISSN 1090-6509

РУБ Physics, Multidisciplinary
Рубрики:
THERMAL-EXPANSION
   CRYSTALS
   MAGNETOSTRICTION
   HoAl3(BO3)4
   GARNETS
Аннотация: The thermodynamic properties of alumoborate TmAl3(BO3)4 single crystal are studied experimentally and theoretically. A theoretical analysis based on the crystal field model makes it possible to interpret all measured parameters. The crystal field parameters are determined. The temperature (3–300 K) and field (up to 9 T) dependences of magnetization are described. The field and temperature dependences of multipole moments of the Tm3+ ion in TmAl3(BO3)4 make it possible to describe magnetostriction and low-temperature anomalies in thermal expansion.

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Публикация на русском языке Магнитные, магнитоупругие и спектроскопические свойства TmAl3(BO3)4 [Текст] / А. А. Демидов [и др.] // Журн. эксперим. и теор. физ. : Наука, 2014. - Т. 146 Вып. 4. - С. 835-843

Держатели документа:
Bryansk State Tech Univ, Bryansk 241035, Russia
Moscow MV Lomonosov State Univ, Moscow 119992, Russia
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
Russian Acad Sci, Inst Spect, Moscow 142190, Russia

Доп.точки доступа:
Demidov, A. A.; Volkov, D. V.; Gudim, I. A.; Гудим, Ирина Анатольевна; Eremin, E. V.; Еремин, Евгений Владимирович; Boldyrev, K. N.; Russian Foundation for Basic Research [13-02-12442ofi_m2]; Russian Federation [MK-1700.2013.2]
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Study of the Physical Properties and Electrocaloric Effect in the BaTiO3 Nano- and Microceramics / A. V. Kartashev [et al.] // Phys. Solid State. - 2019. - Vol. 61, Is. 6. - P. 1052-1061, DOI 10.1134/S1063783419060088. - Cited References: 38 . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter
Рубрики:
HEAT-CAPACITY
   DIELECTRIC-PROPERTIES
   THERMAL-EXPANSION
   THIN-FILMS
Аннотация: The specific heat, thermal expansion, permittivity, and electrocaloric effect in bulk of BaTiO3 (BT) samples in the form of nano- (nBT-500 nm) and micro- (mBT-1200 nm) ceramics fabricated using spark plasma sintering and solid-state plasma techniques have been investigated. The size effect has been reflected, to a great extent, in the suppression of the specific heat and thermal expansion anomalies and in the changes in the temperatures and entropies of phase transitions and permittivity, and a decrease in the maximum intensive electrocaloric effect: ΔTmaxAD = 29 mK (E = 2.0 kV/cm) for nBT and ΔTmaxAD = 70 mK (E = 2.5 kV/cm) for mBT. The conductivity growth at temperatures above 360 K leads to the significant irreversible heating of the samples due to the Joule heat release in the applied electric field, which dominates over the electrocaloric effect.

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Публикация на русском языке Исследования физических свойств и электрокалорического эффекта в нано- и микрокерамике BaTiO3 [Текст] / А. В. Карташев [и др.] // Физ. тверд. тела. - 2019. - Т. 61 Вып. 6. - С. 1128–1137

Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Krasnoyarsk Sci Ctr, Siberian Branch, Krasnoyarsk 660036, Russia.
Krasnoyarsk State Pedag Univ, Krasnoyarsk 660049, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia.
Univ Toulouse, CIRIMAT Lab, F-31062 Toulouse, France
Southern Fed Univ, Inst Phys Res, Rostov Na Donu 344090, Russia.

Доп.точки доступа:
Kartashev, A. V.; Карташев, Андрей Васильевич; Bondarev, V. S.; Бондарев, Виталий Сергеевич; Flerov, I. N.; Флёров, Игорь Николаевич; Gorev, M. V.; Горев, Михаил Васильевич; Pogorel'tsev, E. I.; Погорельцев, Евгений Ильич; Shabanov, A. V.; Шабанов, Александр Васильевич; Molokeev, M. S.; Молокеев, Максим Сергеевич; Guillemet-Fritsch, S.; Raevskii, I. P.
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Prediction of orientation relationships and interface structures between α-, β-, γ-FeSi2 and Si phases / M. A. Visotin, I. A. Tarasov, A. S. Fedorov [et al.] // Acta Crystallogr. B. - 2020. - Vol. 76. - P. 469-482, DOI 10.1107/S2052520620005727. - Cited References: 85. - The following funding is acknowledged: Russian Science Foundation (grant No. 16-13-00060-Pi). . - ISSN 2052-5206

РУБ Chemistry, Multidisciplinary + Crystallography
Рубрики:
THERMAL-EXPANSION
   BETA-FESI2 FILMS
   GROWTH
   SILICON
   DIFFRACTION
Кл.слова (ненормированные):
interface structure -- structure prediction -- orientation relationship -- near-coincidence site -- edge-to-edge matching -- iron silicide -- DFT calculations -- thermal expansion
Аннотация: A pure crystallogeometrical approach is proposed for predicting orientation relationships, habit planes and atomic structures of the interfaces between phases, which is applicable to systems of low-symmetry phases and epitaxial thin film growth. The suggested models are verified with the example of epitaxial growth of α-, γ- and β-FeSi2 silicide thin films on silicon substrates. The density of near-coincidence sites is shown to have a decisive role in the determination of epitaxial thin film orientation and explains the superior quality of β-FeSi2 thin grown on Si(111) over Si(001) substrates despite larger lattice misfits. Ideal conjunctions for interfaces between the silicide phases are predicted and this allows for utilization of a thin buffer α-FeSi2 layer for oriented growth of β-FeSi2 nanostructures on Si(001). The thermal expansion coefficients are obtained within quasi-harmonic approximation from the DFT calculations to study the influence of temperature on the lattice strains in the derived interfaces. Faster decrease of misfits at the α-FeSi2(001)||Si(001) interface compared to γ-FeSi2(001)||Si(001) elucidates the origins of temperature-driven change of the phase growing on silicon substrates. The proposed approach guides from bulk phase unit cells to the construction of the interface atomic structures and appears to be a powerful tool for the prediction of interfaces between arbitrary phases for subsequent theoretical investigation and epitaxial film synthesis.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Visotin, M. A.; Высотин, Максим Александрович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Fedorov, A. S.; Федоров, Александр Семенович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Russian Science FoundationRussian Science Foundation (RSF) [16-13-00060-Pi]
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Tarasov, I. A.
α-FeSi2 as a buffer layer for β-FeSi2 growth: analysis of orientation relationships in silicide/Silicon, silicide/silicide heterointerfaces / I. A. Tarasov, I. A. Bondarev, A. I. Romanenko // J. Surf. Ingestig. - 2020. - Vol. 14, Is. 4. - P. 851-861, DOI 10.1134/S1027451020040357. - Cited References: 74. - The work was supported by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research project no. 18-42-243013. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70) . - ISSN 1027-4510. - ISSN 1819-7094

РУБ Physics, Condensed Matter
Рубрики:
β-FeSi2 thin-films
Thermal-expansion
Phase-transformation
Кл.слова (ненормированные):
iron silicide -- interface structure -- orientation relationship -- near coincidence site lattice -- edge-to-edge matching -- plane-to-plane matching
Аннотация: In this manuscript, we attempt to clarify the capability of utilisation of α-FeSi2 nanocrystals as a buffer layer for growth of monocrystalline/high-quality β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Iron silicides-based nanostructures have a wide spectrum of possible industrial applications in different fields. Mainly, interest in these functional materials is caused by their ecological safety and Earth’s core abundance that give us the opportunity for greener future with highly effective electronic devices. β-FeSi2 phase due to its allowed direct transition with energy close to 0.87 eV can be used as active material in light emission diodes (LED). Utilisation of buffer layers between silicon substrate and give one more tool to engineer the band structure of semiconducting β‑FeSi2 phase. We attempt to clarify the capability of the utilisation of the α-FeSi2 phase as a buffer layer for the growth of β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Possible β-FeSi2/α-,γ-,s-FeSi2/Si orientation relationships (ORs) and habit planes were examined with crystallogeometrical approaches and compared with β-FeSi2/Si ones. The lowest interplanar and interatomic spacing misfits between silicon lattice and a silicide one are observed for the pair of s-FeSi2{011}[200]/Si{022}[100] at room temperature and equal to –0.57%. The least interplanar and interatomic spacing misfit of 1.7 and 1.88%, respectively, for β-FeSi2/Si, can be decreased as low as –0.67 (interplanar) and 0.87 (interatomic) % by placing an α-FeSi2 layer between silicon and β-FeSi2 phase. It is stated that the growth of metastable γ-FeSi2 is also favourable on silicon due to low interplanar and interatomic spacing misfit (–0.77%) and a higher density of NCS in comparison with s-FeSi2. Design and technological procedure for the synthesis of possible β-FeSi2/α-FeSi2/Si heterostructure have been proposed based on the results obtained.

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Держатели документа:
RAS, Kirensky Inst Phys, Fed Res Ctr, KSC,SB, Krasnoyarsk 660036, Russia.
RAS, Nikolaev Inst Inorgan Chem, SB, Novosibirsk 630090, Russia.

Доп.точки доступа:
Bondarev, I. A.; Бондарев, Илья Александрович; Romanenko, A. I.; Тарасов, Иван Анатольевич; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science [18-42-243013]; Ministry of Education and Science of the Russian FederationMinistry of Education and Science, Russian Federation; Siberian Branch of the Russian Academy of SciencesRussian Academy of Sciences [II.8.70]
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