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Structure, magnetic and magnetocaloric properties of the Mn5Ge3 thin film grown on Si(111) / A. S. Tarasov, S. V. Komogortsev, A. V. Lukyanenko [et al.] // J. Mater. Sci. - 2024. - Vol. 59, Is. 21. - P. 9423-9436, DOI 10.1007/s10853-024-09755-6. - Cited References: 79. - The study was supported by the Russian Science Foundation Grant of the № 23-22-10033, https://rscf.ru/project/23-22-10033/, Krasnoyarsk Regional Fund of Science. The authors thank the laboratory of the Magnetic MAX Materials created under the Megagrant project (agreement no. 075-15-2019-1886) for providing experimental equipment and the Collective Use Center at the Krasnoyarsk Scientific Center (Siberian Division, Russian Academy of Sciences) for assistance . - ISSN 0022-2461. - ISSN 1573-4803
Аннотация: Mn5Ge3 is a ferromagnetic hexagonal crystal promising for spintronics and magnetocalorics. A systematic study and analysis of the magnetic properties of the Mn5Ge3 thin film grown on Si(111) were performed. The magnetic anisotropy of the film is determined by the shape anisotropy and the easy magnetization axis aligned along the c axis of the crystal. The uniaxial anisotropy constant Ku fully corresponds to that for a bulk single crystal, which indicates that c axis coincides with film normal. Mn5Ge3 film demonstrates high saturation magnetization MS = 900 emu/cm3 (900 kA/m) at T = 100 K and magnetocaloric effect ΔS = 3.16 ± 0.22 J kg−1 K−1 at 300 K and B = 1.5 T. ΔS is comparable to that for multicomponent or Gd rare earth films. Furthermore, a different anisotropy of the magnetocaloric effect compared to bulk Mn5Ge3 was found, which may be related to the anisotropy of the film shape and, possibly, to the domain structure. The results obtained are promising for the design and development of magnetocaloric, spintronic, and spin-caloritronic devices on a silicon platform.

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Держатели документа:
Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Krasnoyarsk, Russia, 660036
Reshetnev Siberian State University of Science and Technology, Krasnoyarsk, Russia, 660037
Federal Research Center KSC SB RAS, Institute of Chemistry and Chemical Technology, Krasnoyarsk, Russia, 660036

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Komogortsev, S. V.; Комогорцев, Сергей Викторович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Yakovlev, I. A.; Яковлев, Иван Александрович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Sukhachev, A. L.; Сухачев, Александр Леонидович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Solovyov, L. A.; Andryushchenko, T. A.; Андрющенко, Татьяна Александровна; Bondarev, I. A.; Бондарев, Илья Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Volkov, N. V.; Волков, Никита Валентинович
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Microwave-assisted synthesis of the new solid-solution (V1–xCrx)2GaC (0 ≤ x ≤ 1), a Pauli paramagnet almost matching the Stoner criterion for x = 0.80 / N. Kubitza, R. Xie, I. Tarasov [et al.] // Chem. Mater. - 2023. - Vol. 35, Is. 11. - P. 4427-4434, DOI 10.1021/acs.chemmater.3c00591. - Cited References: 54. - This work has been supported by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) within CRC/TRR 270, projects B03 and B02, A05 (Project-ID 405553726) . - ISSN 0897-4756. - ISSN 1520-5002
Аннотация: MAX phases that exhibit long-range magnetic order in the bulk are still very hard to synthesize. Chromium and manganese are the cutoff elements when transitioning through the 3dmetals that still form stable full and doped MAX phases, respectively. An iron-based (on the M-site) bulk MAX phase does not exist. Therefore, other strategies to induce long-range magnetic ordering in bulk MAX phases are necessary to open the path to new functional materials. Here, we demonstrate the nonconventional synthesis of a hitherto unknown MAX phase solid-solution (V1–xCrx)2GaC by microwave heating. The full series with 0 ˂ x ˂ 1 (x = 0.20, 0.40, 0.50, 0.60, 0.80) forms almost single phase with minimal differences in their morphology. Their magnetic properties, however, differ rather significantly, with a maximum susceptibility around x = 0.80. Both the experimental and theoretical/ab initio magnetic analysis confirm that the solid-solution (V1–xCrx)2GaC is an itinerant Pauli paramagnet that almost fulfills the Stoner criterion for ferromagnetic order (for compositions with x around 0.80). This is a powerful insight into how chemical composition couples with electronic structure and the resulting bulk magnetic properties because it provides crucial guidelines to produce long-range ordered magnetic MAX phases.

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Держатели документа:
Department of Chemistry, Technische Universität Darmstadt, 64287 Darmstadt, Germany
Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany
Faculty of Physics and Center for Nanointegration Duisburg-Essen, University of Duisburg-Essen, 47057 Duisburg, Germany

Доп.точки доступа:
Kubitza, Niels; Xie, Ruiwen; Tarasov, I. A.; Тарасов, Иван Анатольевич; Shen, Chen; Zhang, Hongbin; Wiedwald, Ulf; Birkel, Christina S.
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Ferromagnetic silicides and germanides epitaxial films and multilayered hybrid structures: Synthesis, magnetic and transport properties / A. S. Tarasov, A. V. Lukyanenko, I. A. Yakovlev [et al.] // Bull. Russ. Acad. Sci.: Phys. - 2023. - Vol. 87, Suppl. 1. - P. S133-S146, DOI 10.1134/S1062873823704518. - Cited References: 54. - The authors thank the laboratory of Magnetic MAX Materials created under Megagrant project (agreement no. 075-15-2019-1886) for providing experimental equipment and the Collective Use Center at the Krasnoyarsk Scientific Center (Siberian Branch, Russian Academy of Sciences) for assistance. The authors also thank Professor B.A. Belyaev for FMR calculations. - Supported by the Russian Science Foundation, grant no. 23-22-10033, https://rscf.ru/project/23-22-10033/, Krasnoyarsk Regional Fund of Science . - ISSN 1062-8738. - ISSN 1934-9432
Кл.слова (ненормированные):
iron silicide -- manganese germanide -- MBE -- FMR -- electronic transport -- spintronics
Аннотация: Planar and vertical hybrid structures, which combine ferromagnetic and semiconductor layers are essential for implementation and study of spin transport phenomena in semiconductors, which is crucial for the advancement and development of spintronics. We have developed approaches for the synthesis of Fe3 + xSi1 – x epitaxial thin films and demonstrated the spin accumulation effect in multiterminal devices based on Fe3 + xSi1 – x/Si. Fe3 + xSi1 – x/Ge/Fe3Si and Fe3 + xSi1 – x/Ge/Mn5Ge3 multilayer hybrid structures were synthesized on a Si(111) substrate, study of their structural, magnetic and transport properties were performed. The effect of synthesis conditions on the growth of epitaxial structures and on their magnetic and transport properties was discussed. The results obtained may prove valuable in the development and fabrication of spintronic devices.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center “Krasnoyarsk Scientific Center”, Siberian Branch, Russian Academy of Sciences, 660036, Krasnoyarsk, Russia
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, 660041, Krasnoyarsk, Russia
Federal Research Center “Krasnoyarsk Scientific Center”, Siberian Branch, Russian Academy of Sciences, 660036, Krasnoyarsk, Russia

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Yakovlev, I. A.; Яковлев, Иван Александрович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Bondarev, I. A.; Бондарев, Илья Александрович; Sukhachev, A. L.; Сухачев, Александр Леонидович; Shanidze, L. V.; Шанидзе, Лев Викторович; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Volkov, N. V.; Волков, Никита Валентинович
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Fabrication and thermoelectric properties of SrTiO3–TiO2 composite ceramics / A. P. Zavjalov, G. A. Lyubas, M. R. Sharafutdinov [et al.] // Ceram. Int. - 2022. - Vol. 48, Is. 24. - P. 36500-36514, DOI 10.1016/j.ceramint.2022.08.210. - Cited References: 55. - This work was supported by the Russian Foundation for Basic Research (Project No. 18-29-11044). A.P.Z. appreciate the support from the Ministry of Science and Higher Education of the Russian Federation within the governmental order for the Institute of Solid State Chemistry and Mechanochemistry of SB RAS (project No. FWUS-2021-0004). D.Yu.K. is grateful to the Council on grants of the President of the Russian Federation (scholarship No. SP-3221.2022.1) for supporting the studies devoted to obtaining advanced ceramic materials. A.A.B. O.O.Sh. and E.K.P. grateful to the State Assignment of the Ministry of Science and Higher Education of the Russian Federation (topic No. 00657-2020-0006) for supporting the SEM images obtaining. The work was partially done at the shared research center SSTRC on the basis of the VEPP-4–VEPP-2000 complex at Budker Institute of Nuclear Physics of Siberian Branch of Russian Academy of Sciences . - ISSN 0272-8842. - ISSN 1873-3956
Кл.слова (ненормированные):
Composites -- BaTiO3 and titanates -- TiO2 -- Thermoelectric performance
Аннотация: The paper presents the results of preparing biphase SrTiO3–TiO2 ceramics as a promising system for n-type thermoelectrics using the features of a two-dimensional electron gas. Ceramics was obtained by reactive spark plasma sintering of SrCO3 and TiO2. The dynamics of phase transformations are shown; it is clarified that phase transformations are not the driving force of sintering. The mutual stabilization of the SrTiO3 and TiO2 phases is shown. Unique data on the assessment of the temperature gradient in the system have been obtained. A comparison of the thermoelectric characteristics of biphasic ceramics and its constituent phases allows concluding that the role of the two-dimensional electron gas is reduced to modulating the properties of bulk phases. Clear signs of size quantization were detected by the X-ray luminescence method, which is expressed in the blueshift of the luminescence spectrum by 22.3 ± 0.8 meV.

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Держатели документа:
SEC “Advanced Ceramic Materials”, Far Eastern Federal University, 10 Ajax Bay, Russky Island, Vladivostok, 690922, Russian Federation
Institute of Solid-State Chemistry and Mechanochemistry, Siberian Branch, Russian Academy of Sciences, 18 Kutateladze Street, Novosibirsk630128, Russian Federation
Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, 1 Nikol'skiy Prospekt, Kol'tsovo, 630559, Russian Federation
Laboratory of Physics of Magnetic Phenomena, L.V. Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, 50 Akademgorodok Street, Krasnoyarsk, 660036, Russian Federation
Laboratory of Nuclear Technology, Department of Nuclear Technology, Institute of Science-Intensive Technologies and Advanced Materials, Far Eastern Federal University, 10 Ajax Bay, Russky Island, Vladivostok, 690922, Russian Federation
Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, 5 Acad. Lavrentiev Avenue, Novosibirsk, 630090, Russian Federation
Institute for Automation and Control Processes, Far Eastern Branch, Russian Academy of Sciences, 5 Radio Street, Vladivostok, 690041, Russian Federation

Доп.точки доступа:
Zavjalov, A. P.; Lyubas, G. A.; Sharafutdinov, M. R.; Tarasov, I. A.; Тарасов, Иван Анатольевич; Belov, A. A.; Shichalin, O. O.; Papynov, E. K.; Kriventsov, V. V.; Kosyanov, D. Y.
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О возможных магнитных свойствах ультратонких пленок Mn2GaC на подложках Al2O3 / М. А. Высотин, И. А. Тарасов, А. С. Федоров [и др.] // Письма в ЖЭТФ. - 2022. - Т. 116, Вып. 5. - С. 318-323, DOI 10.31857/S1234567822170098. - Библиогр.: 22. - Исследования выполняются при финансовой поддержке Российского фонда фундаментальных исследований, Правительства Красноярского края, Красноярского краевого фонда науки в рамках научного проекта # 20-42-240012, Правительства РФ в рамках гранта по созданию лабораторий мирового уровня (соглашение # 075-15-2019-1886) . - ISSN 0370-274X
Аннотация: Рассматривается вопрос о возможности роста и магнитных свойствах тонких пленок MAX-фазы Mn2GaC на подложках Al2O3 различной ориентации. В рамках геометрического подхода спрогнозированы наиболее предпочтительные ориентационные соотношения и интерфейсные плоскости в системе Mn2GaC//Al2 O3, указывающие на возможность роста на подложках сапфира С-срез (0001), S-срез(01¯1¯1), N-срез (11¯2¯3), и R-срез (0¯11¯2). С помощью метода функционала электронной плотности рассчитаны возможные магнитные свойства сплошных ультратонких пленок Mn2GaC при условии сохранения однородных растяжений/сжатий решетки MAX-фазы,вызванных ростом на предсказанных подложках: определено влияние деформации решетки Mn2GaC на магнитное упорядочение и величины магнитных моментов, оценена возможность перехода из антиферромагнитного состояния в ферромагнитное под действием внешних магнитных полей. Показано, что рост ферромагнитной пленки MAX-фазы Mn2GaC наиболее вероятен на подложках Al2O3(0001), Al2O3(11¯2¯3) и Al2O3(0¯112¯).

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Переводная версия On the possible magnetic properties of ultrathin Mn2GaC films on Al2O3 substrates [Текст] / M. A. Vysotin, I. A. Tarasov, A. S. Fedorov [et al.] // JETP Letters. - 2022. - Vol. 116 Is. 5.- P.323-328

Держатели документа:
Институт физики им. Л. В. Киренского Сибирского отделения РАН, 660036 Красноярск, Россия
Сибирский федеральный университет, 660041 Красноярск, Россия

Доп.точки доступа:
Высотин, Максим Александрович; Vysotin, M. A.; Тарасов, Иван Анатольевич; Tarasov, I. A.; Федоров, Александр Семенович; Fedorov, A. S.; Варнаков, Сергей Николаевич; Varnakov, S. N.; Овчинников, Сергей Геннадьевич; Ovchinnikov, S. G.
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Magnetic properties of mn-doped Fe3+xSi1–x films synthesized on soi substrate by low temperature annealing / A. V. Lukyanenko, A. S. Tarasov, I. A. Tarasov [et al.] // VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022) : Book of abstracts / program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 2, Sect. J : Soft and hard magnetic materials. - Ст. J.P24. - P. 248-249. - Cited References: 6. - The research was funded by Krasnoyarsk Regional Fund of Science . - ISBN 978-5-94469-051-7

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia
Siberian Federal University, Krasnoyarsk, Russia
Federal Research Center KSC SB RAS, Krasnoyarsk, Russia

Доп.точки доступа:
Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Tarasov, A. S.; Тарасов, Антон Сергеевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Rauckii, M.V.; Рауцкий, Михаил Владимирович; Yakovlev, I. A.; Яковлев, Иван Александрович; Kosyrev, N. N.; Косырев, Николай Николаевич; Komarov, V. A.; Shanidze, L. V.; Шанидзе, Лев Викторович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Patrin, G. S.; Патрин, Геннадий Семёнович; Volkov, N. V.; Волков, Никита Валентинович; Российская академия наук; Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН; Казанский (Приволжский) федеральный университет; Euro-Asian Symposium "Trends in MAGnetism"(8 ; 2022 ; Aug. ; 22-26 ; Kazan); "Trends in MAGnetism", Euro-Asian Symposium(8 ; 2022 ; Aug. ; 22-26 ; Kazan)
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Asymmetric interfaces in epitaxial off-stoichiometric Fe3+xSi1-x/Ge/Fe3+xSi1-x hybrid structures: Effect on magnetic and electric transport properties / A. S. Tarasov, I. A. Tarasov, I. A. Yakovlev [et al.] // Nanomaterials. - 2022. - Vol. 12, Is. 1. - Ст. 131, DOI 10.3390/nano12010131. - Cited References: 61. - The research was funded by RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-243007, and by the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886). I.A.T. and S.N.V. thank RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-240012, for partial work related to the development of the simulation model of the pore autocorrelated radial distribution function coupled with the near coincidence site model, the Fe3+xSi1-x lattice distortion analysis, and processing Rutherford backscattering spectroscopy data. The Rutherford backscattering spectroscopy measurements were supported by the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008) . - ISSN 2079-4991

РУБ Chemistry, Multidisciplinary + Nanoscience & Nanotechnology + Materials Science, Multidisciplinary + Physics, Applied
Рубрики:
FILMS
   ANISOTROPY
   SI(001)
   DEVICES
   SURFACE
   GROWTH
Кл.слова (ненормированные):
iron silicide -- germanium -- molecular beam epitaxy -- epitaxial stress -- lattice distortion -- dislocation lattices -- FMR -- Rutherford backscattering -- spintronics
Аннотация: Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 < x < 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.

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Держатели документа:
RAS, Fed Res Ctr KSC SB, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia.
RAS, Fed Res Ctr KSC SB, Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia.
RAS, Boreskov Inst Catalysis SB, Synchrotron Radiat Facil SKIF, Nikolskiy Prospekt 1, Koltsov 630559, Russia.
Immanuel Kant Balt Fed Univ, REC Smart Mat & Biomed Applicat, Kaliningrad 236041, Russia.
Immanuel Kant Balt Fed Univ, REC Funct Nanomat, Kaliningrad 236016, Russia.
Univ Duisburg Essen, Fac Phys, D-47057 Duisburg, Germany.
Univ Duisburg Essen, Ctr Nanointegrat, D-47057 Duisburg, Germany.

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Bondarev, I. A.; Бондарев, Илья Александрович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Platunov, M. S.; Платунов, Михаил Сергеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Efimov, Dmitriy D.; Goikhman, Aleksandr Yu.; Belyaev, B. A.; Беляев, Борис Афанасьевич; Baron, F. A.; Барон, Филипп Алексеевич; Shanidze, Lev V.; Шанидзе, Лев Викторович; Farle, M.; Фарле, Михаель; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Volkov, N. V.; Волков, Никита Валентинович; RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240012]; Government of the Russian Federation [075-15-2019-1886]; Ministry of Science and Higher Education of the Russian Federation [FZWN-2020-0008]
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New ternary magnetic films of MAX phases / I. A. Tarasov, I. A. Yakovlev, M. A. Visotin [et al.] // The Sixth Asian school-conference on physics and technology of nanostructured materials : Proceedings. - VLadivostok, 2022. - Ст. Plenary 10. - P. 23-24. - Cited References: 16 . - ISBN 987-5-8044-1716-2
Аннотация: This article is devoted to the data analysis of magneto-optical ellipsometry data when they are collected from structures with uniaxial optical anisotropy. The magneto-optical parameter, being a part of an off-diagonal tensor elements of dielectric permit tivity, was deduced through Maxwell equations consideration. The way of carrying out an experiment is also dicsussed.

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Держатели документа:
Kirensky Institute of Physics, FRC KSC SB RAS
Siberian Federal University
Reshetnev Siberian State University of Science and Technology

Доп.точки доступа:
Tarasov, I. A.; Тарасов, Иван Анатольевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Visotin, M. A.; Высотин, Максим Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Lyashchenko, S. A.; Лященко, Сергей Александрович; Maximova, O. A.; Максимова, Ольга Александровна; Varnakov, S. N.; Варнаков, Сергей Николаевич; Andryushchenko, T. A.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Asian School-Conference on Physics and Technology of Nanostructured Materials(6 ; 2022 ; Apr. 25-29 ; Vladivostok); Азиатская школа-конференция по физике и технологии наноструктурированных материалов(6 ; 2022 ; 25-29 апр. ; Владивосток)
}
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Ferromagnetic silicides and germanides epitaxial films and multilayered hybryd structures: synthesys, magnetic and transport properties / I. A. Tarasov, I. A. Yakovlev, M. V. Rautskii [et al.] // VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022) : Book of abstracts / program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 1, Sect. : Spintronics and magnetic nanostructures. - Ст. A.O2. - P. 31-32. - Cited References: 10. - Support by Russian Foundation for Basic Research, the Government of the Krasnoyarsk Territory . - ISBN 978-5-94469-051-7

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia
Krasnoyarsk Scientiؤc Center, SB RAS, Krasnoyarsk, Russia

Доп.точки доступа:
Ovchinnikov, S. G. \program com.\; Овчинников, Сергей Геннадьевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Bondarev, I. A.; Бондарев, Илья Александрович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Sukhachev, A. L.; Сухачев, Александр Леонидович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Российская академия наук; Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН; Казанский (Приволжский) федеральный университет; Euro-Asian Symposium "Trends in MAGnetism"(8 ; 2022 ; Aug. ; 22-26 ; Kazan); "Trends in MAGnetism", Euro-Asian Symposium(8 ; 2022 ; Aug. ; 22-26 ; Kazan)
}
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10.

Yakovlev, I. A.
Epitaxial growth of Mn5Ge3 on Si(111) / I. A. Yakovlev, I. A. Tarasov // The Sixth Asian school-conference on physics and technology of nanostructured materials : Proceedings. - VLadivostok, 2022. - P. 74-75. - Cited References: 9 . - ISBN 987-5-8044-1716-2
Аннотация: The structure of Mn5Ge3 films deposited with and without different buffer layers on Si(111)7Ч7 substrates at a temperature of 390 °C are investigated by reflection high energy electron diffraction. It is shown that the 200 nm single-crystal germanide film is formed using two buffer layers with a slight manganese deficiency in the structure. But when deposition is without buffer layers, the thickness of a single-crystal film does not exceed 15 nm.

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Держатели документа:
Kirensky Institute of Physics, FRC KSC SB RAS

Доп.точки доступа:
Tarasov, I. A.; Тарасов, Иван Анатольевич; Яковлев, Иван Александрович; Asian School-Conference on Physics and Technology of Nanostructured Materials(6 ; 2022 ; Apr. 25-29 ; Vladivostok); Азиатская школа-конференция по физике и технологии наноструктурированных материалов(6 ; 2022 ; 25-29 апр. ; Владивосток)
}
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11.

Sublayer-enhanced growth of highly ordered Mn5Ge3 thin film on Si(111) / I. Yakovlev, I. Tarasov, A. Lukyanenko [et al.] // Nanomaterials. - 2022. - Vol. 12, Is. 24. - Ст. 4365, DOI 10.3390/nano12244365. - Cited References: 23. - The research was funded by Russian Science Foundation, project No. 21-12-00226. The RBS experiment was conducted in REC «Functional Nanomaterials», Immanuel Kant Baltic Federal University under the financial support from the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008) . - ISSN 2079-4991
Кл.слова (ненормированные):
manganese germanide -- thin film -- MBE -- ferromagnetism -- sublayer
Аннотация: Mn5Ge3 epitaxial thin films previously grown mainly on Ge substrate have been synthesized on Si(111) using the co-deposition of Mn and Ge at a temperature of 390 °C. RMS roughness decreases by almost a factor of two in the transition from a completely polycrystalline to a highly ordered growth mode. This mode has been stabilized by changing the ratio of the Mn and Ge evaporation rate from the stoichiometric in the buffer layer. Highly ordered Mn5Ge3 film has two azimuthal crystallite orientations, namely Mn5Ge3 (001) [1-10] and Mn5Ge3 (001) [010] matching Si(111)[-110]. Lattice parameters derived a (7.112(1) Å) and c (5.027(1) Å) are close to the bulk values. Considering all structural data, we proposed a double buffer layer model suggesting that all layers have identical crystal structure with P6₃/mcm symmetry similar to Mn5Ge3, but orientation and level of Si concentration are different, which eliminates 8% lattice mismatch between Si and Mn5Ge3 film. Mn5Ge3 film on Si(111) demonstrates no difference in magnetic properties compared to other reported films. TC is about 300 K, which implies no significant excess of Mn or Si doping. It means that the buffer layer not only serves as a platform for the growth of the relaxed Mn5Ge3 film, but is also a good diffusion barrier.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, 660041 Krasnoyarsk, Russia
Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia
Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, 660036 Krasnoyarsk, Russia
REC «Functional Nanomaterials», Immanuel Kant Baltic Federal University, 236016 Kaliningrad, Russia

Доп.точки доступа:
Yakovlev, I. A.; Яковлев, Иван Александрович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Solovyov, L.; Sukhachev, A. L.; Сухачев, Александр Леонидович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Efimov, D.; Goikhman, A.; Bondarev, I. A.; Бондарев, Илья Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич
}
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12.

On the possible magnetic properties of ultrathin Mn2GaC films on Al2O3 substrates / M. A. Vysotin, I. A. Tarasov, A. S. Fedorov [et al.] // JETP Letters. - 2022. - Vol. 116, Is. 5. - P. 323-328, DOI 10.1134/S0021364022601488. - Cited References: 22. - This work was supported jointly by the Russian Foundation for Basic Research, Krasnoyarsk Territory Government, and Krasnoyarsk Regional Science Foundation (project no. 20-42-240012) and by the Ministry of Science and Higher Education of the Russian Federation (agreement no. 075-15-2019-1886, Project for Development of World-Class Laboratories) . - ISSN 0021-3640
Аннотация: The possibility of growth of thin Mn2GaC MAX phase films on Al2O3 substrates with various orientations and their magnetic properties have been studied. The most favorable orientation relationships and interface planes in the Mn2GaC//Al2O3 system, which indicate the possibility of growth on C-face (0001), S-face (011¯1¯), N‑face (112¯3¯), and R-face (01¯12¯) sapphire substrates, have been predicted within a geometric approach. Using the electron density functional method, the possible magnetic properties of continuous ultrathin Mn2GaC films have been calculated under the condition of conservation of uniform expansions/compressions of the MAX phase lattice, which are induced by growth on the predicted substrates. The effect of the deformation of the Mn2GaC lattice on magnetic ordering and magnetic moments has been determined, and the possibility of a transition from an antiferromagnetic to a ferromagnetic state under the action of external magnetic fields has been evaluated. It has been shown that the growth of the ferromagnetic film of the Mn2GaC MAX phase is the most probable on the Al2O3 (0001), Al2O3(112¯3¯), and Al2O3(01¯12¯) substrates.

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Публикация на русском языке О возможных магнитных свойствах ультратонких пленок Mn2GaC на подложках Al2O3 [Текст] / М. А. Высотин, И. А. Тарасов, А. С. Федоров [и др.] // Письма в ЖЭТФ. - 2022. - Т. 116 Вып. 5. - С. 318-323

Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Vysotin, M. A.; Высотин, Максим Александрович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Fedorov, A. S.; Федоров, Александр Семенович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
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13.

    Electron spectroscopy for in-situ analysis of MAX-phases / T. A. Andryushchenko, S. A. Lyashchenko, I. A. Tarasov, S. N. Varnakov // The Sixth Asian school-conference on physics and technology of nanostructured materials : Proceedings. - VLadivostok, 2022. - Ст. IV.p.01. - P. 209. - Cited References: 5. - The research was supported by the government of the Russian Federation (agreement No. 075-15-2019-1886) and the Russian Science Foundation (grant #21-12-00226) . - ISBN 987-5-8044-1716-2
   Перевод заглавия: Электронная спектроскопия для in-situ анализа МАХ-фаз
Аннотация: Electron spectroscopy methods allow performing in-situ analysis of the elemental composition of MAX-phase thin films. Auger electron spectroscopy makes it possible to determine the chemical bonds formed during the synthesis. This paper describes the results of using Auger electron spectroscopy for in-situ analysis of Mn2GeC and Cr2GeC.

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Держатели документа:
Kirensky Institute of Physics, FRC KSC SB RAS
Reshetnev Siberian State University of Science and Technology

Доп.точки доступа:
Andryushchenko, T. A.; Lyashchenko, S. A.; Лященко, Сергей Александрович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Asian School-Conference on Physics and Technology of Nanostructured Materials(6 ; 2022 ; Apr. 25-29 ; Vladivostok); Азиатская школа-конференция по физике и технологии наноструктурированных материалов(6 ; 2022 ; 25-29 апр. ; Владивосток)
}
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14.

Visotin, M. A.
Prediction of Al2O3 substrates’ effect on magnetic properties of Mn2GaC ultrathin films / M. A. Visotin, I. A. Tarasov // International workshop on the properties of functional MAX-materials (2nd FunMax) : book of abstracts / org. com. M. Farle [et al.]. - 2021. - P. 31

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Доп.точки доступа:
Farle, M. \org. com.\; Ovchinnikov, S. G. \org. com.\; Овчинников, Сергей Геннадьевич; Tarasov, A. S. \org. com.\; Тарасов, Антон Сергеевич; Smolyarova, T. E. \org. com.\; Смолярова, Татьяна Евгеньевна; Tarasov, I. A.; Тарасов, Иван Анатольевич; Высотин, Максим Александрович; International workshop on functional MAX-materials(2 ; 2021 ; Sept. 14-17 ; Krasnoyarsk (on-line)); Kirensky Institute of Physics; Siberian Federal Univercity
}
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15.

    Cu-doped TiNxOy thin film resistors DC/RF performance and reliability / L. V. Shanidze, A. S. Tarasov, M. V. Rautskiy [et al.] // Appl. Sci. - 2021. - Vol. 11, Is. 16. - Ст. 7498, DOI 10.3390/app11167498. - Cited References: 13. - This research was funded by RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science, project code 20-42-240013 and by Grant of the Government of the Russian Federation for Creation ofWorld Tier Laboratories (contract No. 075-15-2019-1886) . - ISSN 2076-3417
   Перевод заглавия: Производительность и надежность тонкопленочных резисторов TiNxOy, легированных медью

РУБ Chemistry, Multidisciplinary + Engineering, Multidisciplinary + Materials Science, Multidisciplinary + Physics, Applied
Рубрики:
GROWTH
Кл.слова (ненормированные):
high-frequency passive components -- high power density -- thin film -- copper doped titanium oxynitride -- non-linear -- resistors -- heterogeneous integration
Аннотация: We fabricated Cu-doped TiNxOy thin film resistors by using atomic layer deposition, optical lithography, dry etching, Ti/Cu/Ti/Au e-beam evaporation and lift-off processes. The results of the measurements of the resistance temperature dependence, non-linearity, S-parameters at 0.01–26 GHz and details of the breakdown mechanism under high-voltage stress are reported. The devices’ sheet resistance is 220 ± 8 Ω/□ (480 ± 20 µΩ*cm); intrinsic resistance temperature coefficient (TCR) is ~400 ppm/°C in the T-range of 10–300 K; and S-parameters versus frequency are flat up to 2 GHz with maximum variation of 10% at 26 GHz. The resistors can sustain power and current densities up to ~5 kW*cm−2 and ~2 MA*cm−2, above which they switch to high-resistance state with the sheet resistance equal to ~200 kΩ/□ (~0.4 Ω*cm) caused by nitrogen and copper desorption from TiNxOy film. The Cu/Ti/TiNxOy contact is prone to ageing due to gradual titanium oxidation while the TiNxOy resistor body is stable. The resistors have strong potential for applications in high-frequency integrated and hybrid circuits that require small-footprint, medium-range resistors of 0.05–10 kΩ, with small TCR and high-power handling capability.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Dept Radio Elect, Krasnoyarsk 660041, Russia.
Reshetnev Siberian State Univ Sci & Technol, Inst Space Technol, Krasnoyarsk 660037, Russia.

Доп.точки доступа:
Shanidze, L. V.; Шанидзе, Лев Викторович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautskiy, M. V.; Рауцкий, Михаил Владимирович; Zelenov, F. V.; Konovalov, S. O.; Nemtsev, I. V.; Немцев, Иван Васильевич; Voloshin, A. S.; Волошин, Александр Сергеевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Baron, F. A.; Барон, Филипп Алексеевич; Volkov, N. V.; Волков, Никита Валентинович; RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-240013]; Government of the Russian Federation for Creation ofWorld Tier Laboratories [075-15-2019-1886]
}
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16.

На пути к разнообразию эпитаксиальных соотношений и повышению качества кристаллической структуры тонких пленок MAX-фаз: прогнозирование и эксперимент / И. А. Тарасов, М. А. Высотин, С. А. Лященко [и др.] // XIII Cибирский семинар по высокотемпературной сверхпроводимости и физике наноструктур (ОКНО-2021) : сб. тезисов докладов / сопредс., чл. прогр. ком. С. Г. Овчинников и др. - 2021. - С. 25. - Библиогр.: 1. - Исследования выполняются при финансовой поддержке Российского фонда фундаментальных исследований, Правительства Красноярского края, Красноярского краевого фонда науки в рамках научного проекта № 20-42-240012, Правительства РФ в рамках гранта по созданию лабораторий мирового уровня (соглашение № 075-15-2019-1886). . - ISBN 978-5-90168-835-9

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Держатели документа:
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Овчинников, Сергей Геннадьевич \сопредс., прогр. ком.\; Ovchinnikov, S. G.; Тарасов, Иван Анатольевич; Tarasov, I. A.; Высотин, Максим Александрович; Visotin, M. A.; Лященко, Сергей Александрович; Lyashchenko, S. A.; Максимова, Ольга Александровна; Maximova, O. A.; Назарова, З. И.; Назаров, А. Н.; Овчинников, Сергей Геннадьевич; Сибирский семинар по высокотемпературной сверхпроводимости и физике наноструктур(13 ; 2021 ; 24-25 мая ; Новосибирск); Институт неорганической химии им. А.В. Николаева Сибирского отделения РАН; Новосибирский государственный университет; Новосибирский государственный технический университет; Сибирский федеральный университет; Институт физики им. Л.В. Киренского Сибирского отделения РАН; Омский государственный университет им. Ф.М. Достоевского; Научный совет РАН по физике низких температур
}
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17.

UHV system for producing and studying of MAX phases by in situ spectral magneto-optical ellipsometry in a wide temperature range / D. V. Shevtsov, S. A. Lyashchenko, S. N. Varnakov [et al.] // International workshop on the properties of functional MAX-materials (2nd FunMax) : book of abstracts / org. com. M. Farle [et al.]. - 2021. - P. 45

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Доп.точки доступа:
Farle, M. \org. com.\; Ovchinnikov, S. G. \org. com.\; Овчинников, Сергей Геннадьевич; Tarasov, A. S. \org. com.\; Тарасов, Антон Сергеевич; Smolyarova, T. E. \org. com.\; Смолярова, Татьяна Евгеньевна; Shevtsov, D. V.; Шевцов, Дмитрий Валентинович; Lyashchenko, S. A.; Лященко, Сергей Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Tarasov, I. A.; Тарасов, Иван Анатольевич; Maximova, O. A.; Максимова, Ольга Александровна; International workshop on functional MAX-materials(2 ; 2021 ; Sept. 14-17 ; Krasnoyarsk (on-line)); Kirensky Institute of Physics; Siberian Federal Univercity
}
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18.

Optical and magnetic properties of the DyxCo1-x/Bi/Py trilayers / N. N. Kosyrev, V. Y. Yakovchuk, G. S. Patrin [et al.] // Tech. Phys. Lett. - 2021. - Vol. 47, Is. 2. - P. 107-110, DOI 10.1134/S1063785021020097. - Cited References: 14. - This study was supported by the Russian Foundation for Basic Research, project no. 18-02-00161-a . - ISSN 1063-7850. - ISSN 1090-6533

РУБ Physics, Applied

Кл.слова (ненормированные):
exchange coupling -- magnetic springs -- ellipsometry -- magnetooptical Kerr effect
Аннотация: We report on the results of investigations of the optical and magnetooptical properties of DyxCo1 -x/Bi/Py (Py is permalloy) trilayers. The temperature dependence of the magnetization has been examined using the magnetooptical Kerr effect and the optical refractive and absorption indices have been measured by spectral ellipsometry. It is shown that the thickness of the bismuth spacer affects the exchange coupling between the permalloy and DyCo layers, which manifests itself in the change in the magnetization compensation temperature and in the character of the exchange coupling.

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Публикация на русском языке Оптические и магнитные свойства трехслойных систем DyxCo1-x/Bi/Py [Текст] / Н. Н. Косырев, В. Ю. Яковчук, Г. С. Патрин [и др.] // Письма в Журн. техн. физ. - 2021. - Т. 47 Вып. 3. - С. 7-10

Держатели документа:
Russian Acad Sci, Krasnoyarsk Sci Ctr, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia.
Krasnoyarsk State Agr Univ, Achinsk Branch, Krasnoyarsk Krai 662150, Achinsk, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Kosyrev, N. N.; Косырев, Николай Николаевич; Yakovchuk, V. Yu.; Яковчук, Виктор Юрьевич; Patrin, G. S.; Патрин, Геннадий Семёнович; Komarov, V. A.; Комаров, Василий Андреевич; Volchenko, E. N.; Tarasov, I. A.; Тарасов, Иван Анатольевич; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR) [18-02-00161-a]
}
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19.

Optical and magneto-optical properties of epitaxial Mn2GaC MAX phase thin film / S. Lyaschenko, O. Maximova, D. Shevtsov [et al.] // J. Magn. Magn. Mater. - 2021. - Vol. 528. - Ст. 167803, DOI 10.1016/j.jmmm.2021.167803. - Cited References: 39. - The research was supported by the government of the Russian Federation (agreement No. 075-15-2019-1886) and the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) – Project-ID 405553726 – TRR 270. We thank Andrejs Petruhins for preparation of the samples. J. R. acknowledges funding from the Swedish Research Council (VR), project 642-2013-8020 . - ISSN 0304-8853
Кл.слова (ненормированные):
MAX phases -- Magnetism -- Epitaxial thin films -- Spectral magneto-ellipsometry -- Magnetic circular dichroism
Аннотация: We report measurements of the dielectric permittivity, optical conductivity and magnetic circular dichroism (MCD) of the epitaxial Mn2GaC MAX-phase thin film in an external magnetic field of up to 200 mT, at temperatures of 296 and 140 K and 1.4 to 3.5 eV. The optical conductivity and MCD spectra show absorption peaks which are consistent with the interband electronic transitions for different positions of Mn, Ga, and C ions as confirmed by theoretical calculations of the spin-dependent density of electronic states. The well-known structural phase transition at 214 K is also seen in the changes of optical, magneto-optical and surface magnetic properties of Mn2GaC in our experiment.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Faculty of Physics, University of Duisburg-Essen, Duisburg, 47057, Germany
Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linkoping University, Linkoping, SE-581 83, Sweden

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Lyashchenko, S. A.; Лященко, Сергей Александрович; Maximova, O. A.; Максимова, Ольга Александровна; Shevtsov, D. V.; Шевцов, Дмитрий Валентинович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Wiedwald, U.; Rosen, J.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Farle, M.
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20.

Structural, optical, and electronic properties of Cu-doped TiNxOy grown by ammonothermal atomic layer deposition / F. A. Baron, Y. L. Mikhlin, M. S. Molokeev [et al.] // ACS Appl. Mater. Interfaces. - 2021. - Vol. 13, Is. 27. - P. 32531-32541, DOI 10.1021/acsami.1c08036. - Cited References: 69. - This research was funded by the RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science (project code 20-42-240013) and by the grant of the Government of the Russian Federation for Creation of World Tier Laboratories (contract no. 075-15-2019-1886) . - ISSN 1944-8244. - ISSN 1944-8252

РУБ Nanoscience & Nanotechnology + Materials Science, Multidisciplinary
Рубрики:
OXYNITRIDE THIN-FILMS
TITANIUM-NITRIDE
CONFORMAL TIN
Кл.слова (ненормированные):
atomic layer deposition -- titanium oxynitride -- copper doping -- surface segregation -- thin film
Аннотация: Copper-doped titanium oxynitride (TiNxOy) thin films were grown by atomic layer deposition (ALD) using the TiCl4 precursor, NH3, and O2 at 420 °C. Forming gas was used to reduce the background oxygen concentration and to transfer the copper atoms in an ALD chamber prior to the growth initiation of Cu-doped TiNxOy. Such forming gas-mediated Cu-doping of TiNxOy films had a pronounced effect on their resistivity, which dropped from 484 ± 8 to 202 ± 4 μΩ cm, and also on the resistance temperature coefficient (TCR), which decreased from 1000 to 150 ppm °C–1. We explored physical mechanisms causing this reduction by performing comparative analysis of atomic force microscopy, X-ray photoemission spectroscopy, X-ray diffraction, optical spectra, low-temperature transport, and Hall measurement data for the samples grown with and without forming gas doping. The difference in the oxygen concentration between the films did not exceed 6%. Copper segregated to the TiNxOy surface where its concentration reached 0.72%, but its penetration depth was less than 10 nm. Pronounced effects of the copper doping by forming gas included the TiNxOy film crystallite average size decrease from 57–59 to 32–34 nm, considerably finer surface granularity, electron concentration increase from 2.2(3) × 1022 to 3.5(1) × 1022 cm–3, and the electron mobility improvement from 0.56(4) to 0.92(2) cm2 V–1 s–1. The DC resistivity versus temperature R(T) measurements from 4.2 to 300 K showed a Cu-induced phase transition from a disordered to semimetallic state. The resistivity of Cu-doped TiNxOy films decreased with the temperature increase at low temperatures and reached the minimum near T = 50 K revealing signatures of the quantum interference effects similar to 2D Cu thin films, and then, semimetallic behavior was observed at higher temperatures. In TiNxOy films grown without forming gas, the resistivity decreased with the temperature increase as R(T) = – 1.88T0.6 + 604 μΩ cm with no semimetallic behavior observed. The medium range resistivity and low TCR of Cu-doped TiNxOy make this material an attractive choice for improved matching resistors in RF analog circuits and Si complementary metal–oxide–semiconductor integrated circuits.

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Держатели документа:
KSC SB RAS, Inst Chem & Chem Technol, Fed Res Ctr, Krasnoyarsk 660036, Russia.
KSC SB RAS, Kirensky Inst Phys, Fed Res Ctr, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Reshetnev Siberian State Univ Sci & Technol, Krasnoyarsk 660037, Russia.

Доп.точки доступа:
Baron, F. A.; Барон, Филипп Алексеевич; Mikhlin, Yurii L.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Rautskiy, M. V.; Рауцкий, Михаил Владимирович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Shanidze, L. V.; Шанидзе, Лев Викторович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Smolyarova, T. E.; Смолярова, Татьяна Евгеньевна; Konovalov, Stepan O.; Zelenov, Fyodor, V; Tarasov, A. S.; Тарасов, Антон Сергеевич; Volkov, N. V.; Волков, Никита Валентинович; RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-240013]; Government of the Russian Federation for Creation of World Tier Laboratories [075-15-2019-1886]
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