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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Tarasov I. A., Yakovlev I. A., Rautskii M. V., Bondarev I. A., Lukyanenko A. V., Platunov M. S., Volochaev M. N., Efimov, Dmitriy D., Goikhman, Aleksandr Yu., Belyaev B. A., Baron F. A., Shanidze, Lev V., Farle M., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Asymmetric interfaces in epitaxial off-stoichiometric Fe3+xSi1-x/Ge/Fe3+xSi1-x hybrid structures: Effect on magnetic and electric transport properties
Коллективы : RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240012]; Government of the Russian Federation [075-15-2019-1886]; Ministry of Science and Higher Education of the Russian Federation [FZWN-2020-0008]
Место публикации : Nanomaterials. - 2022. - Vol. 12, Is. 1. - Ст.131. - ISSN 2079-4991(eISSN), DOI 10.3390/nano12010131
Примечания : Cited References: 61. - The research was funded by RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-243007, and by the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886). I.A.T. and S.N.V. thank RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-240012, for partial work related to the development of the simulation model of the pore autocorrelated radial distribution function coupled with the near coincidence site model, the Fe3+xSi1-x lattice distortion analysis, and processing Rutherford backscattering spectroscopy data. The Rutherford backscattering spectroscopy measurements were supported by the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008)
Предметные рубрики: FILMS
ANISOTROPY
SI(001)
DEVICES
SURFACE
GROWTH
Аннотация: Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 x 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Smolyarova T. E., Tarasov A. S., Lukyanenko A. V., Shanidze L. V., Yakovlev I. A., Volkov N. V.
Заглавие : Biocompatible nanostructures fabricated by Dip-Pen nanolithography
Коллективы : Aptamers in Russia, international conference
Место публикации : Aptamers in Russia, international conference (1 ; 2019 ; Aug. 27-30 ; Krasnoyarsk). Molecular Therapy - Nucleic Acids: book of abstracts of the 1st Int. conf. "Aptamers in Russia 2019". - 2019. - Vol. 17, Suppl. 1. - P.8-9
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shanidze L. V., Tarasov A. S., Rautskiy M. V., Zelenov F. V., Konovalov S. O., Nemtsev I. V., Voloshin A. S., Tarasov I. A., Baron F. A., Volkov N. V.
Заглавие : Cu-doped TiNxOy thin film resistors DC/RF performance and reliability
Коллективы : RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-240013]; Government of the Russian Federation for Creation ofWorld Tier Laboratories [075-15-2019-1886]
Место публикации : Appl. Sci. - 2021. - Vol. 11, Is. 16. - Ст.7498. - ISSN 2076-3417(eISSN), DOI 10.3390/app11167498
Примечания : Cited References: 13. - This research was funded by RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science, project code 20-42-240013 and by Grant of the Government of the Russian Federation for Creation ofWorld Tier Laboratories (contract No. 075-15-2019-1886)
Предметные рубрики: GROWTH
Аннотация: We fabricated Cu-doped TiNxOy thin film resistors by using atomic layer deposition, optical lithography, dry etching, Ti/Cu/Ti/Au e-beam evaporation and lift-off processes. The results of the measurements of the resistance temperature dependence, non-linearity, S-parameters at 0.01–26 GHz and details of the breakdown mechanism under high-voltage stress are reported. The devices’ sheet resistance is 220 ± 8 Ω/□ (480 ± 20 µΩ*cm); intrinsic resistance temperature coefficient (TCR) is ~400 ppm/°C in the T-range of 10–300 K; and S-parameters versus frequency are flat up to 2 GHz with maximum variation of 10% at 26 GHz. The resistors can sustain power and current densities up to ~5 kW*cm−2 and ~2 MA*cm−2, above which they switch to high-resistance state with the sheet resistance equal to ~200 kΩ/□ (~0.4 Ω*cm) caused by nitrogen and copper desorption from TiNxOy film. The Cu/Ti/TiNxOy contact is prone to ageing due to gradual titanium oxidation while the TiNxOy resistor body is stable. The resistors have strong potential for applications in high-frequency integrated and hybrid circuits that require small-footprint, medium-range resistors of 0.05–10 kΩ, with small TCR and high-power handling capability.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Tarasov A. S., Shanidze, Lev, Bondarev I. A., Baron F. A., Lukyanenko A. V., Yakovlev I. A., Volochaev M. N., Volkov N. V.
Заглавие : Effect of magnetic and electric fields on the AC resistance of a silicon-on-insulator-based transistor-like device
Коллективы : RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240013]; Government of the Russian Federation; Mega-grant for the Creation of Competitive World-Class Laboratories [075-15-2019-1886]
Место публикации : Phys. Status Solidi A. - 2022. - Vol. 219. Is. 1. - Ст.2100459. - ISSN 1862-6300, DOI 10.1002/pssa.202100459. - ISSN 1862-6319(eISSN)
Примечания : Cited References: 19. - The authors thank the Krasnoyarsk Territorial Center for Collective Use, Krasnoyarsk Scientific Center of the SB RAS, for electron microscope investigations. This study was supported by RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science, projects nos. 20-42-243007 and 20-42-240013, and by the Government of the Russian Federation, the Mega-grant for the Creation of Competitive World-Class Laboratories, agreement no. 075-15-2019-1886
Предметные рубрики: NANOSTRUCTURES
Аннотация: Herein, the AC magnetoresistance (MR) in the silicon-on-insulator (SOI)-based Fe/Si/SiO2/p-Si structure is presented. The structure is used for fabricating a back-gate field-effect pseudo-metal-oxide-semiconductor field-effect transistor (MOSFET) device. The effects of the magnetic field and gate voltage on the transport characteristics of the device are investigated. Magnetoimpedance value of up to 100% is obtained due to recharging of the impurity and surface centers at the insulator/semiconductor interface. A resistance variation of up to 1000% is found, which is caused by the voltage applied to the gate and the field effect on the band structure of the sample. Combining the magnetic and electric fields, one can either change the absolute value of the AC resistance while having the MR fixed or change the sign and character of the field dependence of the MR. The observed effects can be used in the development of magnetic-field-driven SOI-based devices and high-frequency circuits.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Baron F. A., Volochaev M. N., Lukyanenko A. V., Mikhlin Yu. L., Molokeev M. S., Rautskii M. V., Smolyarova T. E., Shanidze L. V., Tarasov A. S.
Заглавие : Effect of the forming gas ALD chamber preconditioning on the physical properties of TiN1-xOx films
Коллективы : International Online Workshop on the properties of Functional MAX-materials, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : 1st FunMAX Workshop 2020: Book of Abstracts/ , Ин-т физики им. Л.В. Киренского. - 2020. - P15
Примечания : Cited References: 1
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Baron F. A., Volochaev M. N., Lukyanenko A. V., Mikhlin Yu. L., Molokeev M. S., Rautskii M. V., Smolyarova T. E., Shanidze L. V., Tarasov A. S.
Заглавие : Effect of the forming gas ALD chamber preconditioning on the physical properties of TiN1-xOx films
Коллективы : International workshop on functional MAX-materials, Kirensky Institute of Physics
Место публикации : International workshop on functional MAX-materials (1st FunMax). - 2020. - P.15
Примечания : Cited references: 1
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Lukyanenko A. V., Yakovlev I. A., Tarasov I. A., Bondarev I. A., Sukhachev A. L., Shanidze L. V., Smolyakov D. A., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Ferromagnetic silicides and germanides epitaxial films and multilayered hybrid structures: Synthesis, magnetic and transport properties
Колич.характеристики :14 с
Место публикации : Bull. Russ. Acad. Sci.: Phys. - 2023. - Vol. 87, Suppl. 1. - P.S133-S146. - ISSN 10628738 (ISSN), DOI 10.1134/S1062873823704518. - ISSN 19349432 (eISSN)
Примечания : Cited References: 54. - The authors thank the laboratory of Magnetic MAX Materials created under Megagrant project (agreement no. 075-15-2019-1886) for providing experimental equipment and the Collective Use Center at the Krasnoyarsk Scientific Center (Siberian Branch, Russian Academy of Sciences) for assistance. The authors also thank Professor B.A. Belyaev for FMR calculationsSupported by the Russian Science Foundation, grant no. 23-22-10033, https://rscf.ru/project/23-22-10033/, Krasnoyarsk Regional Fund of Science
Аннотация: Planar and vertical hybrid structures, which combine ferromagnetic and semiconductor layers are essential for implementation and study of spin transport phenomena in semiconductors, which is crucial for the advancement and development of spintronics. We have developed approaches for the synthesis of Fe3 + xSi1 – x epitaxial thin films and demonstrated the spin accumulation effect in multiterminal devices based on Fe3 + xSi1 – x/Si. Fe3 + xSi1 – x/Ge/Fe3Si and Fe3 + xSi1 – x/Ge/Mn5Ge3 multilayer hybrid structures were synthesized on a Si(111) substrate, study of their structural, magnetic and transport properties were performed. The effect of synthesis conditions on the growth of epitaxial structures and on their magnetic and transport properties was discussed. The results obtained may prove valuable in the development and fabrication of spintronic devices.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Rautskii M. V., Shanidze L. V., Lukyanenko A. V., Tarasov A. S., Yakovlev I. A., Bondarev I. A.
Заглавие : Low temperature behaviour of the lateral photovoltaic effect in multilayered silicon-based nanostructures
Коллективы : Российская академия наук, Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН, Казанский (Приволжский) федеральный университет, Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022): Book of abstracts/ program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 1, Sect.: Magnetotransport, magnetooptics and magnetophotonics. - Ст.D.P3. - P.446-447. - ISBN 978-5-94469-051-7
Примечания : Cited References: 8. - Support by Krasnoyarsk Regional Fund of Science is acknowledged
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Lukyanenko A. V., Tarasov A. S., Tarasov I. A., Rauckii M.V., Yakovlev I. A., Kosyrev N. N., Komarov V. A., Shanidze L. V., Varnakov S. N., Ovchinnikov S. G., Patrin G. S., Volkov N. V.
Заглавие : Magnetic properties of mn-doped Fe3+xSi1–x films synthesized on soi substrate by low temperature annealing
Коллективы : Российская академия наук, Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН, Казанский (Приволжский) федеральный университет, Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022): Book of abstracts/ program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 2, Sect. J: Soft and hard magnetic materials. - Ст.J.P24. - P.248-249. - ISBN 978-5-94469-051-7
Примечания : Cited References: 6. - The research was funded by Krasnoyarsk Regional Fund of Science
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shanidze L. V., Tarasov A. S., Lukyanenko A. V., Rautskii M. V., Yakovlev I. A., Zelenov F. N., Baron F. A., Volkov N. V.
Заглавие : Magnetic-field-driven electron transport in SOI back-gate device
Коллективы : International School and Conference on optoelectronics, photonics, engineering and nanostructures
Место публикации : J. Phys.: Conf. Ser. - 2019. - Vol. 1410. - Ст.012204. - ISSN 1742-6588, DOI 10.1088/1742-6596/1410/1/012204. - ISSN 1742-6596 (eISSN)
Примечания : Cited References: 8. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund by project No 18-42-243022 and supported in part by the Russian Foundation for Basic Research by project no. 18-32-00035. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70) and Fundamental research program of the Presidium of the RAS no. 32 «Nanostructures: physics, chemistry, biology, basics of technologies».
Аннотация: In this work, we studied the electronic transport properties of silicon nanowire field-effect transistors with a back gate. A nontrivial magnetic field influence on the drain current at low temperature (10 K) was found. The strongest effect was observed in the majority carrier accumulation mode. In this mode magnetic field of 0.5 T increases current through the device by more than an order of magnitude. The paper describes the possible mechanisms of the magnetic field influence on the electronic transport characteristics of the structures.
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