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1.


    Vazhenina, I. G.
    Angular dependences of uniform and non-uniform ferromagnetic resonance in multilayer films / I. G. Vazhenina, R. S. Iskhakov [et al.] // Euro-asian symposium "Trends in magnetism" (EASTMAG-2019) : Book of abstracts / чл. конс. ком.: S. G. Ovchinnikov, N. V. Volkov [et al.] ; чл. прогр. ком. D. M. Dzebisashvili [et al.]. - 2019. - Vol. 1. - Ст. B.P19. - P. 193. - Cited References: 2. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research project No 18-42-243005 ”Synthesis and investigation of magnetic properties of gradient materials that are characterized by predetermine type of the magnetic parameter change”. . - ISBN 978-5-9500855-7-4

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia
M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Ekaterinburg, Russia

Доп.точки доступа:
Ovchinnikov, S. G. \чл. конс. ком.\; Овчинников, Сергей Геннадьевич; Volkov, N. V. \чл. конс. ком.\; Волков, Никита Валентинович; Dzebisashvili, D. M. \чл. прогр. ком.\; Дзебисашвили, Дмитрий Михайлович; Iskhakov, R. S.; Исхаков, Рауф Садыкович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Milyaev, M. A.; Naumova, L. I.; Klepikova, A. S.; Важенина, Ирина Георгиевна; Российская академия наук; Уральское отделение РАН; Институт физики металлов им. М. Н. Михеева Уральского отделения РАН; Уральский федеральный университет им. первого Президента России Б.Н. Ельцина; Российский фонд фундаментальных исследований; Euro-Asian Symposium "Trends in MAGnetism"(7 ; 2019 ; Sept. ; 8-13 ; Ekaterinburg); "Trends in MAGnetism", Euro-Asian Symposium(7 ; 2019 ; Sept. ; 8-13 ; Ekaterinburg)
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2.


   
    Anomalous hall effect in an epitaxial Mn5Ge3 thin film on Si(111) / M. V. Rautskii, I. A. Yakovlev, S. N. Varnakov, A. S. Tarasov // VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022) : Book of abstracts / program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 1, Sect. : Spintronics and magnetic nanostructures. - Ст. A.P34. - P. 163-164. - Cited References: 5. - Support by Russian Foundation for Basic Research, the Government of the Krasnoyarsk Territory . - ISBN 978-5-94469-051-7

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia

Доп.точки доступа:
Ovchinnikov, S. G. \program com.\; Овчинников, Сергей Геннадьевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Yakovlev, I. A.; Яковлев, Иван Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Tarasov, A. S.; Тарасов, Антон Сергеевич; Российская академия наук; Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН; Казанский (Приволжский) федеральный университет; Euro-Asian Symposium "Trends in MAGnetism"(8 ; 2022 ; Aug. ; 22-26 ; Kazan); "Trends in MAGnetism", Euro-Asian Symposium(8 ; 2022 ; Aug. ; 22-26 ; Kazan)
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3.


   
    Asymmetric interfaces in epitaxial off-stoichiometric Fe3+xSi1-x/Ge/Fe3+xSi1-x hybrid structures: Effect on magnetic and electric transport properties / A. S. Tarasov, I. A. Tarasov, I. A. Yakovlev [et al.] // Nanomaterials. - 2022. - Vol. 12, Is. 1. - Ст. 131, DOI 10.3390/nano12010131. - Cited References: 61. - The research was funded by RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-243007, and by the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886). I.A.T. and S.N.V. thank RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-240012, for partial work related to the development of the simulation model of the pore autocorrelated radial distribution function coupled with the near coincidence site model, the Fe3+xSi1-x lattice distortion analysis, and processing Rutherford backscattering spectroscopy data. The Rutherford backscattering spectroscopy measurements were supported by the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008) . - ISSN 2079-4991
РУБ Chemistry, Multidisciplinary + Nanoscience & Nanotechnology + Materials Science, Multidisciplinary + Physics, Applied
Рубрики:
FILMS
   ANISOTROPY

   SI(001)

   DEVICES

   SURFACE

   GROWTH

Кл.слова (ненормированные):
iron silicide -- germanium -- molecular beam epitaxy -- epitaxial stress -- lattice distortion -- dislocation lattices -- FMR -- Rutherford backscattering -- spintronics
Аннотация: Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 < x < 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.

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Держатели документа:
RAS, Fed Res Ctr KSC SB, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia.
RAS, Fed Res Ctr KSC SB, Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia.
RAS, Boreskov Inst Catalysis SB, Synchrotron Radiat Facil SKIF, Nikolskiy Prospekt 1, Koltsov 630559, Russia.
Immanuel Kant Balt Fed Univ, REC Smart Mat & Biomed Applicat, Kaliningrad 236041, Russia.
Immanuel Kant Balt Fed Univ, REC Funct Nanomat, Kaliningrad 236016, Russia.
Univ Duisburg Essen, Fac Phys, D-47057 Duisburg, Germany.
Univ Duisburg Essen, Ctr Nanointegrat, D-47057 Duisburg, Germany.

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Bondarev, I. A.; Бондарев, Илья Александрович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Platunov, M. S.; Платунов, Михаил Сергеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Efimov, Dmitriy D.; Goikhman, Aleksandr Yu.; Belyaev, B. A.; Беляев, Борис Афанасьевич; Baron, F. A.; Барон, Филипп Алексеевич; Shanidze, Lev V.; Шанидзе, Лев Викторович; Farle, M.; Фарле, Михаель; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Volkov, N. V.; Волков, Никита Валентинович; RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240012]; Government of the Russian Federation [075-15-2019-1886]; Ministry of Science and Higher Education of the Russian Federation [FZWN-2020-0008]
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4.


   
    Biofunctionalized magnetic microdiscs applied in medicine / T. E. Smolyarova [и др.] // Moscow Int. Symp. on Magnet. (MISM-2017) : 1-7 July 2017 : book of abstracts. - 2017. - Ст. 2PO-K-47. - P. 320. - Cited References: 2. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund

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Доп.точки доступа:
Smolyarova, T. E.; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Bondarev, I. A.; Бондарев, Илья Александрович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Volkov, N. V.; Волков, Никита Валентинович; Moscow International Symposium on Magnetism(7 ; 2017 ; Jul. ; Moscow); Московский государственный университет им. М.В. Ломоносова; Российский фонд фундаментальных исследований
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5.


   
    Characterization and magnetotransport properties of textured Fe3O4 films / A. S. Tarasov [et al.] // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. O10.21. - P. 465. - References: 2. - This work was partially supported by RFBR project no. 14-02-00234, the RAS «Far East» Program No 0262-2015-0057 . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
magnetite -- texture film -- spin-dependent transport


Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Volochaev, M. N.; Волочаев, Михаил Николаевич; Eremin, E. V.; Еремин, Евгений Владимирович; Korobtsov, V .V.; Коробцов, Владимир Викторович; Balashev, V. V.; Балашев В. В.; Vikulov, V. A.; Solovyov, L. A.; Соловьев, Леонид Александрович; Volkov, N. V.; Волков, Никита Валентинович; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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6.


   
    Co nanoparticles localized in matrices of Various types: magnetooptical and magnetotransport properties / Yu. E. Samoshkina, D. A. Petrov, M. V. Rautskii [et al.] // VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022) : Book of abstracts / program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 1, Sect. : Magnetotransport, magnetooptics and magnetophotonics. - Ст. D.P14. - P. 466-467. - Cited References: 8. - This research was funded by the Russian Science Foundation grant No. 21-72-00061 . - ISBN 978-5-94469-051-7
   Перевод заглавия: Наночастицы кобальта, локализованные в матрицах разного типа: магнитооптические и магнитотранспортные свойства

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia
Ural Federal University, Ekaterinburg, Russia
Zavoisky Physical-Technical Institute, Russian Academy of Sciences, Kazan, Russia

Доп.точки доступа:
Ovchinnikov, S. G. \program com.\; Овчинников, Сергей Геннадьевич; Samoshkina, Yu. E.; Самошкина, Юлия Эрнестовна; Petrov, D. A.; Петров, Дмитрий Анатольевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Neznakhin, D. S.; Stepanova, E. A.; Stepanov, A. L.; Российская академия наук; Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН; Казанский (Приволжский) федеральный университет; Euro-Asian Symposium "Trends in MAGnetism"(8 ; 2022 ; Aug. ; 22-26 ; Kazan); "Trends in MAGnetism", Euro-Asian Symposium(8 ; 2022 ; Aug. ; 22-26 ; Kazan)
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7.


   
    Combined method of removing the natural oxide silicon / A. V. Kobyakov [et al.] // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. P11.3. - P. 535 . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
surface -- oxides -- high-frequency plasma


Доп.точки доступа:
Kobyakov, A. V.; Кобяков, Александр Васильевич; Yushkov, V. I.; Юшков, Василий Иванович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Patrin, G. S.; Патрин, Геннадий Семёнович; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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    Core-shell and Bi-segmented cobalt-nickel nanorods prepared by electroless deposition / E. A. Denisova, L. A. Chekanova, S. V. Komogortsev [et al.] // IEEE International Magnetics Virtual Conference (INTERMAG'21) : Digest book. - 2021. - P. 1342. - Cited References: 2. - This work was funded by the RFBR, the Government of the Krasnoyarsk Territory, the KRFS (project no. 20-43-240003)
   Перевод заглавия: Бисегментированные и ядро-оболочка наностержни Co-Ni , полученные методом химического осаждения

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Доп.точки доступа:
Denisova, E. A.; Денисова, Елена Александровна; Chekanova, L. A.; Чеканова, Лидия Александровна; Komogortsev, S. V.; Комогорцев, Сергей Викторович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Nemtsev, I. V.; Немцев, Иван Васильевич; Iskhakov, R. S.; Исхаков, Рауф Садыкович; Tkachev, V. V.; Plotnikov, V. S.; Dolgopolova, M. V.; IEEE International Magnetics Conference(2021 ; Apr. 26-30 ; Lion, France (Virtual))
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9.


   
    Correlation between magneto-optical and transport properties of Sr doped manganite films / Y. E. Samoshkina [et al.] // J. Alloys Compd. - 2019. - Vol. 782. - P. 334-342, DOI 10.1016/j.jallcom.2018.12.158. - Cited References: 51. - The authors are grateful to A.V. Malakhovskii (Kirensky Institute of Physics, Federal Research Center KSC SB RAS) for fruitful discussions of the magneto-optics data and V.I. Chichkov and N.V. Andreev (National University of Science and Technology MISiS) for the preparation of the manganite films. The work was supported partly by Russian Academy of Sciences , [grant number 0356-2017-0030 ], and the Russian Foundation for Basic Research , [grant number 16-32-00209 ]. . - ISSN 0925-8388
Кл.слова (ненормированные):
Thin films -- Manganites -- Crystal structure -- Electrical transport -- Electronic properties -- Magnetic circular dichroism
Аннотация: The features of electronic structure of La0.7Sr0.3MnO3 Pr0.8Sr0.2MnO3, and Pr0.6Sr0.4MnO3 polycrystalline films of different thickness have been investigated using magnetic circular dichroism (MCD) in the range of 1.1–4.2 eV. The temperature behavior of the samples electrical resistance were also has been studied. It was found that films with high Sr content (0.3 and 0.4) act as high-temperature semiconductors, while the maximum in the temperature dependences of resistivity these films indicates the transition of the samples to the metallic state at some temperature TM-S, which is different for different sample thickness. The films with the lower Sr content (0.2) act as insulators in the used temperature range. The MCD spectra have been decomposed to the Gaussian-shaped lines, and the temperature dependence of intensity of each line has been analyzed in comparison with temperature dependence of the films magnetization and with their electric conductivity type. Different temperature behavior of the intensity of four specified Gaussian-lines was revealed for semiconductor films. In the case of insulating Pr0.8Sr0.2MnO3 samples, the intensity of three specified Gaussian lines changes with the temperature in the same way as the magnetization changed. It was established that the lanthanide (La, Pr) type does not affect the MCD spectra shape for the films with the same electrical conductivity type. Besides, the correlation between the MCD data of the films and their conductivity type was revealed. Due to the detailed analysis of the specified Gaussian lines with taking into account the well-known in the literature absorption bands, lying outside the studied spectral region, the MCD bands for the studied manganite films have been identified with electronic transitions of a different nature.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Samoshkina, Yu. E.; Самошкина, Юлия Эрнестовна; Edelman, I. S.; Эдельман, Ирина Самсоновна; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Molokeev, M. S.; Молокеев, Максим Сергеевич
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10.


   
    Current dependent magneto-optical Kerr effect in Hall Bar CoFe structures / N. N. Kosyrev [et al.] // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. P6.17. - P. 325 . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
Hall bar structure -- magneto-optical Kerr effect


Доп.точки доступа:
Kosyrev, N. N.; Косырев, Николай Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Edelman, I. S.; Эдельман, Ирина Самсоновна; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Patrin, G. S.; Патрин, Геннадий Семёнович; Han, X. F.; Feng, J.; Wan, C.; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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11.


   
    Determination of the existence region of a Griffith-like phase in Pr1–xSrxMnO3/YSZ films / Y. E. Samoshkina [et al.] // J. Exp. Theor. Phys. - 2017. - Vol. 125, Is. 6. - P. 1090-1095, DOI 10.1134/S106377611712007X. - Cited References:34. - This study was supported by the Russian Foundation for Basic Research (project no. 16-32-00209mol_a) and the Council for Grants from the President of the Russian Federation (NSh7559.2016.2). E. A. Stepanova and D. S. Neznakhin were supported by the RF Ministry of Education and Sciences (State target no. 3.61212017/8.9). . - ISSN 1063-7761. - ISSN 1090-6509
Рубрики:
COLOSSAL MAGNETORESISTANCE
   ELECTRICAL-PROPERTIES

   RARE-EARTH

Аннотация: We have studied the temperature dependences of the magnetic susceptibility and the electron magnetic resonance in Pr1–xSrxMnO3/YSZ polycrystalline films (x = 0.2, 0.4). The paramagnetic properties of samples indicate the presence of short-range-order ferromagnetic correlations above the phase transition temperature (Tc ). The existence region of such correlations has been considered using the Griffith theory.

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Публикация на русском языке Определение области существования фазы, подобной фазе Гриффитса, в пленках Pr1-xSrxMnO3/YSZ [Текст] / Ю. Э. Самошкина [и др.] // Журн. эксперим. и теор. физ. - 2017. - Т. 152 Вып. 6. - С. 1279-1285

Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Fed Res Ctr,Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia.
Eltsyn Ural Fed Univ, Ekaterinburg 620002, Russia.
Natl Res Technol Univ MISiS, Moscow 119049, Russia.

Доп.точки доступа:
Samoshkina, Yu. E.; Самошкина, Юлия Эрнестовна; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Stepanova, E. A.; Neznakhin, D. S.; Andreev, N. V.; Chichkov, V. I.; Russian Foundation for Basic Research [16-32-00209mol_a]; Council for Grants from the President of the Russian Federation [NSh7559.2016.2]; RF Ministry of Education and Sciences [3.61212017/8.9]
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12.


   
    Effect of epitaxial alignment on electron transport from quasi-two-dimensional iron silicide α-FeSi2 nanocrystals into p-Si(001) / I. A. Tarasov [et al.] // Физ. и техника полупроводников. - 2018. - Т. 52: 25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia), Вып. 5. - с. 523, DOI 10.21883/FTP.2018.05.45867.56. - The work was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects no. 16-42-243060 and 16-42-243035 and Russian Foundation for Basic Research, Government of the Republic of Khakassia, research project no. 17-42-190308. We also thank L.A. Solovyov for his assistance in XRD analysis. . - ISSN 0015-3222
Аннотация: Self-assembled growth of α-FeSi2 nanocrystal ensembles on gold-activated and gold-free Si(001) surface by molecular beam epitaxy is reported. The microstructure and basic orientation relationship (OR) between the silicide nanocrystals and silicon substrate were analysed. The study reveals that utilisation of the gold as catalyst regulates the preferable OR of the nanocrystals with silicon and their habitus. It is shown that electron transport from α-FeSi2 phase into p-Si(001) can be tuned by the formation of (001)-or (111)-textured α-FeSi2 nanocrystals ensembles. A current-voltage characteristic of the structures with different preferable epitaxial alignment (α-FeSi2(001)/Si(100) and α-FeSi2(111)/Si(100)) shows good linearity at room temperature. However, it becomes non-linear at different temperatures for different ORs due to different Schottky barrier height governed by a particular epitaxial alignment of the α-FeSi2/p-Si interfaces.

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"Переводная" версия Effect of epitaxial alignment on electron transport from quasi-two-dimensional iron silicide α-FeSi2 nanocrystals into p-Si(001) [Текст] / I. A. Tarasov [et al.] // Semiconductors. - 2018. - Vol. 52 : 25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia) Is. 5.- P.654-659

Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Tarasov, I. A.; Тарасов, Иван Анатольевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-243060, 16-42-243035]; Russian Foundation for Basic Research, Government of the Republic of Khakassia [17-42-190308]; International Symposium on Nanostructures - Physics and Technology(25th ; Jun 26-30, 2017 ; Saint Petersburg, Russia)
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13.


   
    Effect of epitaxial alignment on electron transport from quasi-two-dimensional iron silicide α-FeSi2 nanocrystals into p-Si(001) / I. A. Tarasov [et al.] // Semiconductors. - 2018. - Vol. 52: 25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia), Is. 5. - P. 654-659, DOI 10.1134/S1063782618050330. - Cited References:31. - The work was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects no. 16-42-243060 and 16-42-243035 and Russian Foundation for Basic Research, Government of the Republic of Khakassia, research project no. 17-42-190308. We also thank L.A. Solovyov for his assistance in XRD analysis. . - ISSN 1063-7826. - ISSN 1090-6479
РУБ Physics, Condensed Matter
Рубрики:
BETA-FESI2 THIN-FILMS
   LOW-TEMPERATURE

   GROWTH

   FESI2

   SI(100)

   SI(111)

Аннотация: Self-assembled growth of α-FeSi2 nanocrystal ensembles on gold-activated and gold-free Si(001) surface by molecular beam epitaxy is reported. The microstructure and basic orientation relationship (OR) between the silicide nanocrystals and silicon substrate were analysed. The study reveals that utilisation of the gold as catalyst regulates the preferable OR of the nanocrystals with silicon and their habitus. It is shown that electron transport from α-FeSi2 phase into p-Si(001) can be tuned by the formation of (001)-or (111)-textured α-FeSi2 nanocrystals ensembles. A current-voltage characteristic of the structures with different preferable epitaxial alignment (α-FeSi2(001)/Si(100) and α-FeSi2(111)/Si(100)) shows good linearity at room temperature. However, it becomes non-linear at different temperatures for different ORs due to different Schottky barrier height governed by a particular epitaxial alignment of the α-FeSi2/p-Si interfaces.

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Публикация на "русском языке" Effect of epitaxial alignment on electron transport from quasi-two-dimensional iron silicide α-FeSi2 nanocrystals into p-Si(001) [Текст] / I. A. Tarasov [et al.] // Физ. и техника полупроводников. - 2018. - Т. 52 : 25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia) Вып. 5.- с.523

Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Tarasov, I. A.; Тарасов, Иван Анатольевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-243060, 16-42-243035]; Russian Foundation for Basic Research, Government of the Republic of Khakassia [17-42-190308]; International Symposium on Nanostructures - Physics and Technology(25th ; Jun 26-30, 2017 ; Saint Petersburg, Russia)
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14.


   
    Effect of the forming gas ALD chamber preconditioning on the physical properties of TiN1-xOx films / F.A. Baron [и др.] // 1st FunMAX Workshop 2020 : Book of Abstracts. - 2020. - P. 15. - Cited References: 1

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Держатели документа:
Kirensky Institute of Physics

Доп.точки доступа:
Baron, F. A.; Барон, Филипп Алексеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Mikhlin, Yu. L.; Михлин, Юрий Леонидович; Molokeev, M. S.; Молокеев, Максим Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Smolyarova, T. E.; Смолярова, Татьяна Евгеньевна; Shanidze, L. V.; Шанидзе, Лев Викторович; Tarasov, A. S.; Тарасов, Антон Сергеевич; International Online Workshop on the properties of Functional MAX-materials(1 ; 2020 ; Aug ; 10-12 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН
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15.


   
    Effect of the forming gas ALD chamber preconditioning on the physical properties of TiN1-xOx films / F. A. Baron, M. N. Volochaev, A. V. Lukyanenko [et al.] ; чл. орг. ком.: M. Farle [et al.] ; секр. орг. ком. T. E. Smolyarova // International workshop on functional MAX-materials (1st FunMax). - 2020. - P. 15. - Cited references: 1

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Держатели документа:
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Baron, F. A.; Барон, Филипп Алексеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Mikhlin, Yu. L.; Михлин, Юрий Леонидович; Molokeev, M. S.; Молокеев, Максим Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Smolyarova, T. E.; Смолярова, Татьяна Евгеньевна; Shanidze, L. V.; Шанидзе, Лев Викторович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Farle, M. \чл. орг. ком.\; Tarasov, A. S. \чл. орг. ком.\; Ovchinnikov, S. G. \чл. орг. ком.\; Овчинников, Сергей Геннадьевич; Smolyarova, T. E. \секр. орг. ком.\; International workshop on functional MAX-materials(1 ; 2020 ; Aug. 10-12 ; Krasnoyarsk (on-line)); Kirensky Institute of Physics
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16.


   
    Electronic transport in Cr2GeC and Cr2-xMnxGeC thin films grown by magnetron sputtering / A. S. Tarasov, M. V. Rautskii, A. V. Lukyanenko [et al.] // V International Baltic Conference on Magnetism. IBCM : Book of abstracts. - 2023. - P. 130. - Cited References: 5. - РФН № 21-12-00226

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS
Siberian Federal University

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Bondarev, M. A.; Бондарев, Михаил Александрович; Lyashchenko, S. A.; Лященко, Сергей Александрович; Andryushchenko, T. A.; Varnakov, S. N.; Варнаков, Сергей Николаевич; International Baltic Conference on Magnetism(5 ; 2023 ; Aug. 20-24 ; Svetlogorsk, Russia); Балтийский федеральный университет им. И. Канта
}
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17.


   
    EPR-determined anisotropy of the g-factor and magnetostriction of a Cu2MnBO5 single crystal with a ludwigite structure / A. A. Dubrovskiy [et al.] // JETP Letters. - 2017. - Vol. 106, Is. 11. - P. 716-719, DOI 10.1134/S0021364017230072. - Cited References:18. - This study was supported jointly by the Russian Foundation for Basic Research and the Government of the Krasnoyarsk Territory (project no. 16-42-243028). . - ISSN 0021-3640. - ISSN 1090-6487
Рубрики:
ELECTRON-SPIN-RESONANCE
Аннотация: Electron paramagnetic resonance (EPR) and magnetostriction of the Cu2MnBO5 single crystal have been studied. The EPR spectrum consists of a single Lorentzian line due to the exchange-coupled system of spins of Cu2+ and Mn3+ ions. It has been established experimentally that the g-factor in the paramagnetic region is strongly anisotropic and anomalously small, which is not typical of the exchange-coupled system of spins of Cu2+ and Mn3+ ions. At a temperature of 150 K, the g-factors along the crystallographic a, b, and c axes are 2.04, 1.96, and 1.87, respectively. Such small effective g-factor values can be due to the effect of the anisotropic Dzyaloshinskii-Moriya exchange interaction between the spins of Cu2+ and Mn3+ ions directed along the a axis. The presence of two Cu2+ and Mn3+ Jahn-Teller ions occupying four nonequivalent positions in the crystal is responsible for the absence of the inversion center. It is found that the behavior of the magnetostriction of Cu2MnBO5 is not typical of transition-metal crystals but is closer to the behavior of crystals containing rare-earth ions.

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Публикация на русском языке Анизотропия g-фактора, определенная методом ЭПР, и магнитострикция монокристалла Cu2MnBO5 со структурой людвигита [Текст] / А. А. Дубровский [и др.] // Письма в Журн. эксперим. и теор. физ. - 2017. - Т. 106 Вып. 11. - С. 685-688

Держатели документа:
Russian Acad Sci, Siberian Branch, Fed Res Ctr KRC, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Russian Acad Sci, Zavoisky Phys Tech Inst, Kazan 420029, Russia.

Доп.точки доступа:
Dubrovskiy, A. A.; Дубровский, Андрей Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Moshkina, E. M.; Мошкина, Евгения Михайловна; Yatsyk, I. V.; Eremina, R. M.; Russian Foundation for Basic Research; Government of the Krasnoyarsk Territory [16-42-243028]
}
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18.


   
    ESR study of Mn-heterovalent ludwigite Mn3-xCuxBO5 / R. M. Eremina [и др.] // Mod. develop. of magn. resonance : abstracts int. conf. / ed. Salikhov K. M. - Kazan, 2016. - P. 124-125. - This work was supported by the RFBR no. 16-32-50083
   Перевод заглавия: Исследование методом ЭПР Mn-гетеровалентных людвигитов Mn3-xCuxBO5

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Доп.точки доступа:
Salikhov K. M. \ed.\; Eremina, R. M.; Yatsyk, I. V; Moshkina, E. M.; Мошкина, Евгения Михайловна; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Bezmaternykh, L. N.; Безматерных, Леонард Николаевич; Krug von Nidda, H.-A.; Liodl, A.; "Modern Development of Magnetic Resonance", International conference(2016 ; 31 Oct.-4 Nov. ; Kazan)
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19.


   
    Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/ p -Si hybrid structure / N. V. Volkov [et al.] // AIP Adv. - 2017. - Vol. 7, Is. 1. - Ст. 015206, DOI 10.1063/1.4974876. - Cited References: 29. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research Projects Nos. 16-42-242036 and 16-42-243046, the Russian Ministry of Education and Science, state assignment no. 16.663.2014K. . - ISSN 2158-3226
Кл.слова (ненормированные):
Electric fields -- Impact ionization -- Ionization -- Magnetic fields -- Magnetism -- Manganese -- Schottky barrier diodes -- Effect of magnetic field -- High magnetic fields -- Low temperatures -- Magnetic and electric fields -- Magnetotransport effects -- Magnetotransport phenomena -- Schottky barriers -- Switching devices -- Magnetic field effects
Аннотация: We report on abrupt changes in dc resistance and impedance of a diode with the Schottky barrier based on the Mn/SiO2/p-Si structure in a magnetic field. It was observed that at low temperatures the dc and ac resistances of the device change by a factor of more than 106 with an increase in a magnetic field to 200 mT. The strong effect of the magnetic field is observed only above the threshold forward bias across the diode. The ratios between ac and dc magnetoresistances can be tuned from almost zero to 108% by varying the bias. To explain the diversity of magnetotransport phenomena observed in the Mn/SiO2/p-Si structure, it is necessary to attract several mechanisms, which possibly work in different regions of the structure. The anomalously strong magnetotransport effects are attributed to the magnetic-field-dependent impact ionization in the bulk of a Si substrate. At the same time, the conditions for this process are specified by structure composition, which, in turn, affects the current through each structure region. The effect of magnetic field attributed to suppression of impact ionization via two mechanisms leads to an increase in the carrier energy required for initiation of impact ionization. The first mechanism is related to displacement of acceptor levels toward higher energies relative to the top of the valence band and the other mechanism is associated with the Lorentz forces affecting carrier trajectories between scatterings events. The estimated contributions of these two mechanisms are similar. The proposed structure is a good candidate for application in CMOS technology-compatible magnetic- and electric-field sensors and switching devices.

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Держатели документа:
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, Russian Federation
Institute of Space Technology, Siberian State Aerospace University, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Gustaitsev, A. O.; Густайцев, Артур Олегович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Volochaev, M. N.; Волочаев, Михаил Николаевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
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20.


   
    Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure / I. A. Tarasov [et al.] // International workshop on actual problems of condensed matter physics : Program. Book of abstracts / Fed. Res. Center KSC SB RAS, Kirensky Inst. of phys., Sib. Fed. Univ. - Krasnoyarsk, 2017. - P. 21

Материалы совещания

Доп.точки доступа:
Ovchinnikov, S. G. \предс. прогр. ком.\; Овчинников, Сергей Геннадьевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Yakovlev, I. A.; Яковлев, Иван Александрович; Ovchinnikov, S. G.; Volkov, N. V.; Волков, Никита Валентинович; Federal Research Center KSC SB RAS; Kirensky Institute of Physics; Siberian Federal Univercity; International Workshop on Actual Problems of Condensed Matter Physics(27 Mar. - 1 Apr. 2017 ; Krasnoyarsk / Cheremushki)
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