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1.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Vazhenina I. G., Iskhakov R. S., Rautskii M. V., Milyaev M. A., Naumova L. I., Klepikova A. S.
Заглавие : Angular dependences of uniform and non-uniform ferromagnetic resonance in multilayer films
Коллективы : Российская академия наук, Уральское отделение РАН, Институт физики металлов им. М. Н. Михеева Уральского отделения РАН, Уральский федеральный университет им. первого Президента России Б.Н. Ельцина, Российский фонд фундаментальных исследований, Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : Euro-asian symposium "Trends in magnetism" (EASTMAG-2019): Book of abstracts/ чл. конс. ком.: S. G. Ovchinnikov, N. V. Volkov [et al.] ; чл. прогр. ком. D. M. Dzebisashvili [et al.]. - 2019. - Vol. 1. - Ст.B.P19. - P.193. - ISBN 978-5-9500855-7-4 (Шифр В33/E12-125657784)
Примечания : Cited References: 2. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research project No 18-42-243005 ”Synthesis and investigation of magnetic properties of gradient materials that are characterized by predetermine type of the magnetic parameter change”.
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2.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Rautskii M. V., Yakovlev I. A., Varnakov S. N., Tarasov A. S.
Заглавие : Anomalous hall effect in an epitaxial Mn5Ge3 thin film on Si(111)
Коллективы : Российская академия наук, Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН, Казанский (Приволжский) федеральный университет, Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022): Book of abstracts/ program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 1, Sect.: Spintronics and magnetic nanostructures. - Ст.A.P34. - P.163-164. - ISBN 978-5-94469-051-7
Примечания : Cited References: 5. - Support by Russian Foundation for Basic Research, the Government of the Krasnoyarsk Territory
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3.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Tarasov I. A., Yakovlev I. A., Rautskii M. V., Bondarev I. A., Lukyanenko A. V., Platunov M. S., Volochaev M. N., Efimov, Dmitriy D., Goikhman, Aleksandr Yu., Belyaev B. A., Baron F. A., Shanidze, Lev V., Farle M., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Asymmetric interfaces in epitaxial off-stoichiometric Fe3+xSi1-x/Ge/Fe3+xSi1-x hybrid structures: Effect on magnetic and electric transport properties
Коллективы : RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240012]; Government of the Russian Federation [075-15-2019-1886]; Ministry of Science and Higher Education of the Russian Federation [FZWN-2020-0008]
Место публикации : Nanomaterials. - 2022. - Vol. 12, Is. 1. - Ст.131. - ISSN 2079-4991(eISSN), DOI 10.3390/nano12010131
Примечания : Cited References: 61. - The research was funded by RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-243007, and by the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886). I.A.T. and S.N.V. thank RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-240012, for partial work related to the development of the simulation model of the pore autocorrelated radial distribution function coupled with the near coincidence site model, the Fe3+xSi1-x lattice distortion analysis, and processing Rutherford backscattering spectroscopy data. The Rutherford backscattering spectroscopy measurements were supported by the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008)
Предметные рубрики: FILMS
ANISOTROPY
SI(001)
DEVICES
SURFACE
GROWTH
Аннотация: Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 x 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.
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4.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Smolyarova T. E., Lukyanenko A. V., Tarasov A. S., Rautskii M. V., Bondarev I. A., Ovchinnikov S. G., Volkov N. V.
Заглавие : Biofunctionalized magnetic microdiscs applied in medicine
Коллективы : Moscow International Symposium on Magnetism, Московский государственный университет им. М.В. Ломоносова, Российский фонд фундаментальных исследований
Место публикации : Moscow Int. Symp. on Magnet. (MISM-2017): 1-7 July 2017 : book of abstracts. - 2017. - Ст.2PO-K-47. - P.320
Примечания : Cited References: 2. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund
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5.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Volochaev M. N., Eremin E. V., Korobtsov V .V., Balashev V. V., Vikulov V. A., Solovyov L. A., Volkov N. V.
Заглавие : Characterization and magnetotransport properties of textured Fe3O4 films
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.O10.21. - P.465. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : References: 2. - This work was partially supported by RFBR project no. 14-02-00234, the RAS «Far East» Program No 0262-2015-0057
Ключевые слова (''Своб.индексиров.''): magnetite--texture film--spin-dependent transport
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6.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Samoshkina Yu. E., Petrov D. A., Rautskii M. V., Neznakhin D. S., Stepanova E. A., Stepanov A. L.
Заглавие : Co nanoparticles localized in matrices of Various types: magnetooptical and magnetotransport properties
Коллективы : Российская академия наук, Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН, Казанский (Приволжский) федеральный университет, Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022): Book of abstracts/ program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 1, Sect.: Magnetotransport, magnetooptics and magnetophotonics. - Ст.D.P14. - P.466-467. - ISBN 978-5-94469-051-7
Примечания : Cited References: 8. - This research was funded by the Russian Science Foundation grant No. 21-72-00061
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7.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Kobyakov A. V., Yushkov V. I., Rautskii M. V., Volochaev M. N., Patrin G. S.
Заглавие : Combined method of removing the natural oxide silicon
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.P11.3. - P.535. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Ключевые слова (''Своб.индексиров.''): surface--oxides--high-frequency plasma
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8.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Denisova E. A., Chekanova L. A., Komogortsev S. V., Rautskii M. V., Nemtsev I. V., Iskhakov R. S., Tkachev V. V., Plotnikov V. S., Dolgopolova M. V.
Заглавие : Core-shell and Bi-segmented cobalt-nickel nanorods prepared by electroless deposition
Коллективы : IEEE International Magnetics Conference
Место публикации : IEEE International Magnetics Virtual Conference (INTERMAG'21): Digest book. - 2021. - P.1342
Примечания : Cited References: 2. - This work was funded by the RFBR, the Government of the Krasnoyarsk Territory, the KRFS (project no. 20-43-240003)
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9.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Samoshkina Yu. E., Edelman I. S., Rautskii M. V., Molokeev M. S.
Заглавие : Correlation between magneto-optical and transport properties of Sr doped manganite films
Место публикации : J. Alloys Compd. - 2019. - Vol. 782. - P.334-342. - ISSN 09258388 (ISSN) , DOI 10.1016/j.jallcom.2018.12.158
Примечания : Cited References: 51. - The authors are grateful to A.V. Malakhovskii (Kirensky Institute of Physics, Federal Research Center KSC SB RAS) for fruitful discussions of the magneto-optics data and V.I. Chichkov and N.V. Andreev (National University of Science and Technology MISiS) for the preparation of the manganite films. The work was supported partly by Russian Academy of Sciences , [grant number 0356-2017-0030 ], and the Russian Foundation for Basic Research , [grant number 16-32-00209 ].
Ключевые слова (''Своб.индексиров.''): thin films--manganites--crystal structure--electrical transport--electronic properties--magnetic circular dichroism
Аннотация: The features of electronic structure of La0.7Sr0.3MnO3 Pr0.8Sr0.2MnO3, and Pr0.6Sr0.4MnO3 polycrystalline films of different thickness have been investigated using magnetic circular dichroism (MCD) in the range of 1.1–4.2 eV. The temperature behavior of the samples electrical resistance were also has been studied. It was found that films with high Sr content (0.3 and 0.4) act as high-temperature semiconductors, while the maximum in the temperature dependences of resistivity these films indicates the transition of the samples to the metallic state at some temperature TM-S, which is different for different sample thickness. The films with the lower Sr content (0.2) act as insulators in the used temperature range. The MCD spectra have been decomposed to the Gaussian-shaped lines, and the temperature dependence of intensity of each line has been analyzed in comparison with temperature dependence of the films magnetization and with their electric conductivity type. Different temperature behavior of the intensity of four specified Gaussian-lines was revealed for semiconductor films. In the case of insulating Pr0.8Sr0.2MnO3 samples, the intensity of three specified Gaussian lines changes with the temperature in the same way as the magnetization changed. It was established that the lanthanide (La, Pr) type does not affect the MCD spectra shape for the films with the same electrical conductivity type. Besides, the correlation between the MCD data of the films and their conductivity type was revealed. Due to the detailed analysis of the specified Gaussian lines with taking into account the well-known in the literature absorption bands, lying outside the studied spectral region, the MCD bands for the studied manganite films have been identified with electronic transitions of a different nature.
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10.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Kosyrev N. N., Ovchinnikov S. G., Edelman I. S., Rautskii M. V., Patrin G. S., Han X. F., Feng J., Wan C.
Заглавие : Current dependent magneto-optical Kerr effect in Hall Bar CoFe structures
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.P6.17. - P.325. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Ключевые слова (''Своб.индексиров.''): hall bar structure--magneto-optical kerr effect
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11.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Samoshkina Yu. E., Rautskii M. V., Stepanova E. A., Neznakhin D. S., Andreev N. V., Chichkov V. I.
Заглавие : Determination of the existence region of a Griffith-like phase in Pr1–xSrxMnO3/YSZ films
Коллективы : Russian Foundation for Basic Research [16-32-00209mol_a]; Council for Grants from the President of the Russian Federation [NSh7559.2016.2]; RF Ministry of Education and Sciences [3.61212017/8.9]
Место публикации : J. Exp. Theor. Phys. - 2017. - Vol. 125, Is. 6. - P.1090-1095. - ISSN 1063-7761, DOI 10.1134/S106377611712007X. - ISSN 1090-6509(eISSN)
Примечания : Cited References:34. - This study was supported by the Russian Foundation for Basic Research (project no. 16-32-00209mol_a) and the Council for Grants from the President of the Russian Federation (NSh7559.2016.2). E. A. Stepanova and D. S. Neznakhin were supported by the RF Ministry of Education and Sciences (State target no. 3.61212017/8.9).
Предметные рубрики: COLOSSAL MAGNETORESISTANCE
ELECTRICAL-PROPERTIES
RARE-EARTH
Аннотация: We have studied the temperature dependences of the magnetic susceptibility and the electron magnetic resonance in Pr1–xSrxMnO3/YSZ polycrystalline films (x = 0.2, 0.4). The paramagnetic properties of samples indicate the presence of short-range-order ferromagnetic correlations above the phase transition temperature (Tc ). The existence region of such correlations has been considered using the Griffith theory.
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12.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov I. A., Rautskii M. V., Yakovlev I. A., Volochaev M. N.
Заглавие : Effect of epitaxial alignment on electron transport from quasi-two-dimensional iron silicide α-FeSi2 nanocrystals into p-Si(001)
Коллективы : International Symposium on Nanostructures - Physics and Technology , Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-243060, 16-42-243035]; Russian Foundation for Basic Research, Government of the Republic of Khakassia [17-42-190308]
Место публикации : Физ. и техника полупроводников. - 2018. - Т. 52: 25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia), Вып. 5. - с.523. - ISSN 0015-3222, DOI 10.21883/FTP.2018.05.45867.56
Примечания : The work was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects no. 16-42-243060 and 16-42-243035 and Russian Foundation for Basic Research, Government of the Republic of Khakassia, research project no. 17-42-190308. We also thank L.A. Solovyov for his assistance in XRD analysis.
Аннотация: Self-assembled growth of α-FeSi2 nanocrystal ensembles on gold-activated and gold-free Si(001) surface by molecular beam epitaxy is reported. The microstructure and basic orientation relationship (OR) between the silicide nanocrystals and silicon substrate were analysed. The study reveals that utilisation of the gold as catalyst regulates the preferable OR of the nanocrystals with silicon and their habitus. It is shown that electron transport from α-FeSi2 phase into p-Si(001) can be tuned by the formation of (001)-or (111)-textured α-FeSi2 nanocrystals ensembles. A current-voltage characteristic of the structures with different preferable epitaxial alignment (α-FeSi2(001)/Si(100) and α-FeSi2(111)/Si(100)) shows good linearity at room temperature. However, it becomes non-linear at different temperatures for different ORs due to different Schottky barrier height governed by a particular epitaxial alignment of the α-FeSi2/p-Si interfaces.
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13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov I. A., Rautskii M. V., Yakovlev I. A., Volochaev M. N.
Заглавие : Effect of epitaxial alignment on electron transport from quasi-two-dimensional iron silicide α-FeSi2 nanocrystals into p-Si(001)
Коллективы : International Symposium on Nanostructures - Physics and Technology , Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-243060, 16-42-243035]; Russian Foundation for Basic Research, Government of the Republic of Khakassia [17-42-190308]
Место публикации : Semiconductors. - 2018. - Vol. 52: 25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia), Is. 5. - P.654-659. - ISSN 1063-7826, DOI 10.1134/S1063782618050330. - ISSN 1090-6479(eISSN)
Примечания : Cited References:31. - The work was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects no. 16-42-243060 and 16-42-243035 and Russian Foundation for Basic Research, Government of the Republic of Khakassia, research project no. 17-42-190308. We also thank L.A. Solovyov for his assistance in XRD analysis.
Предметные рубрики: BETA-FESI2 THIN-FILMS
LOW-TEMPERATURE
GROWTH
FESI2
SI(100)
SI(111)
Аннотация: Self-assembled growth of α-FeSi2 nanocrystal ensembles on gold-activated and gold-free Si(001) surface by molecular beam epitaxy is reported. The microstructure and basic orientation relationship (OR) between the silicide nanocrystals and silicon substrate were analysed. The study reveals that utilisation of the gold as catalyst regulates the preferable OR of the nanocrystals with silicon and their habitus. It is shown that electron transport from α-FeSi2 phase into p-Si(001) can be tuned by the formation of (001)-or (111)-textured α-FeSi2 nanocrystals ensembles. A current-voltage characteristic of the structures with different preferable epitaxial alignment (α-FeSi2(001)/Si(100) and α-FeSi2(111)/Si(100)) shows good linearity at room temperature. However, it becomes non-linear at different temperatures for different ORs due to different Schottky barrier height governed by a particular epitaxial alignment of the α-FeSi2/p-Si interfaces.
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14.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Baron F. A., Volochaev M. N., Lukyanenko A. V., Mikhlin Yu. L., Molokeev M. S., Rautskii M. V., Smolyarova T. E., Shanidze L. V., Tarasov A. S.
Заглавие : Effect of the forming gas ALD chamber preconditioning on the physical properties of TiN1-xOx films
Коллективы : International Online Workshop on the properties of Functional MAX-materials, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : 1st FunMAX Workshop 2020: Book of Abstracts/ , Ин-т физики им. Л.В. Киренского. - 2020. - P15
Примечания : Cited References: 1
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15.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Baron F. A., Volochaev M. N., Lukyanenko A. V., Mikhlin Yu. L., Molokeev M. S., Rautskii M. V., Smolyarova T. E., Shanidze L. V., Tarasov A. S.
Заглавие : Effect of the forming gas ALD chamber preconditioning on the physical properties of TiN1-xOx films
Коллективы : International workshop on functional MAX-materials, Kirensky Institute of Physics
Место публикации : International workshop on functional MAX-materials (1st FunMax). - 2020. - P.15
Примечания : Cited references: 1
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16.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Bondarev M. A., Lyashchenko S. A., Andryushchenko T. A., Varnakov S. N.
Заглавие : Electronic transport in Cr2GeC and Cr2-xMnxGeC thin films grown by magnetron sputtering
Коллективы : International Baltic Conference on Magnetism, Балтийский федеральный университет им. И. Канта
Место публикации : V International Baltic Conference on Magnetism. IBCM: Book of abstracts. - 2023. - P.130
Примечания : Cited References: 5. - РФН № 21-12-00226
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17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Dubrovskiy A. A., Rautskii M. V., Moshkina E. M., Yatsyk I. V., Eremina R. M.
Заглавие : EPR-determined anisotropy of the g-factor and magnetostriction of a Cu2MnBO5 single crystal with a ludwigite structure
Коллективы : Russian Foundation for Basic Research; Government of the Krasnoyarsk Territory [16-42-243028]
Место публикации : JETP Letters. - 2017. - Vol. 106, Is. 11. - P.716-719. - ISSN 0021-3640, DOI 10.1134/S0021364017230072. - ISSN 1090-6487(eISSN)
Примечания : Cited References:18. - This study was supported jointly by the Russian Foundation for Basic Research and the Government of the Krasnoyarsk Territory (project no. 16-42-243028).
Предметные рубрики: ELECTRON-SPIN-RESONANCE
Аннотация: Electron paramagnetic resonance (EPR) and magnetostriction of the Cu2MnBO5 single crystal have been studied. The EPR spectrum consists of a single Lorentzian line due to the exchange-coupled system of spins of Cu2+ and Mn3+ ions. It has been established experimentally that the g-factor in the paramagnetic region is strongly anisotropic and anomalously small, which is not typical of the exchange-coupled system of spins of Cu2+ and Mn3+ ions. At a temperature of 150 K, the g-factors along the crystallographic a, b, and c axes are 2.04, 1.96, and 1.87, respectively. Such small effective g-factor values can be due to the effect of the anisotropic Dzyaloshinskii-Moriya exchange interaction between the spins of Cu2+ and Mn3+ ions directed along the a axis. The presence of two Cu2+ and Mn3+ Jahn-Teller ions occupying four nonequivalent positions in the crystal is responsible for the absence of the inversion center. It is found that the behavior of the magnetostriction of Cu2MnBO5 is not typical of transition-metal crystals but is closer to the behavior of crystals containing rare-earth ions.
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18.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Eremina R. M., Yatsyk I. V, Moshkina E. M., Rautskii M. V., Bezmaternykh L. N., Krug von Nidda H.-A., Liodl A.
Заглавие : ESR study of Mn-heterovalent ludwigite Mn3-xCuxBO5
Коллективы : "Modern Development of Magnetic Resonance", International conference
Место публикации : Mod. develop. of magn. resonance: abstracts int. conf./ ed. Salikhov K. M. - Kazan, 2016. - P.124-125
Примечания : This work was supported by the RFBR no. 16-32-50083
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19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Smolyakov D. A., Gustaitsev A. O., Rautskii M. V., Lukyanenko A. V., Volochaev M. N., Varnakov S. N., Yakovlev I. A., Ovchinnikov S. G.
Заглавие : Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/ p -Si hybrid structure
Место публикации : AIP Adv.: American Institute of Physics, 2017. - Vol. 7, Is. 1. - Ст.015206. - ISSN 21583226 (ISSN), DOI 10.1063/1.4974876
Примечания : Cited References: 29. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research Projects Nos. 16-42-242036 and 16-42-243046, the Russian Ministry of Education and Science, state assignment no. 16.663.2014K.
Ключевые слова (''Своб.индексиров.''): electric fields--impact ionization--ionization--magnetic fields--magnetism--manganese--schottky barrier diodes--effect of magnetic field--high magnetic fields--low temperatures--magnetic and electric fields--magnetotransport effects--magnetotransport phenomena--schottky barriers--switching devices--magnetic field effects
Аннотация: We report on abrupt changes in dc resistance and impedance of a diode with the Schottky barrier based on the Mn/SiO2/p-Si structure in a magnetic field. It was observed that at low temperatures the dc and ac resistances of the device change by a factor of more than 106 with an increase in a magnetic field to 200 mT. The strong effect of the magnetic field is observed only above the threshold forward bias across the diode. The ratios between ac and dc magnetoresistances can be tuned from almost zero to 108% by varying the bias. To explain the diversity of magnetotransport phenomena observed in the Mn/SiO2/p-Si structure, it is necessary to attract several mechanisms, which possibly work in different regions of the structure. The anomalously strong magnetotransport effects are attributed to the magnetic-field-dependent impact ionization in the bulk of a Si substrate. At the same time, the conditions for this process are specified by structure composition, which, in turn, affects the current through each structure region. The effect of magnetic field attributed to suppression of impact ionization via two mechanisms leads to an increase in the carrier energy required for initiation of impact ionization. The first mechanism is related to displacement of acceptor levels toward higher energies relative to the top of the valence band and the other mechanism is associated with the Lorentz forces affecting carrier trajectories between scatterings events. The estimated contributions of these two mechanisms are similar. The proposed structure is a good candidate for application in CMOS technology-compatible magnetic- and electric-field sensors and switching devices.
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20.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov I. A., Smolyakov D. A., Rautskii M. V., Lukyanenko A. V., Yakovlev I. A., Ovchinnikov S. G., Volkov N. V.
Заглавие : Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure
Коллективы : Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Siberian Federal Univercity, International Workshop on Actual Problems of Condensed Matter Physics
Место публикации : International workshop on actual problems of condensed matter physics: Program. Book of abstracts/ Fed. Res. Center KSC SB RAS, Kirensky Inst. of phys., Sib. Fed. Univ. - Krasnoyarsk, 2017. - P.21 (Шифр В37/H99-812624296)
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