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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fedorov A. S., Kuzubov A. A., Eliseeva N. S., Popov Z. I., Visotin M. A., Galkin N. G.
Заглавие : Theoretical study of the lithium diffusion in the crystalline and amorphous silicon as well as on its surface
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials, Азиатская школа-конференция по физике и технологии наноструктурированных материалов
Место публикации : Solid State Phenom.: Selected, peer reviewed papers/ ed. N. Galkin: Trans Tech Publications, 2014. - Vol. 213: Physics and Technology of Nanostructured Materials II. - P.29-34. - ISSN 1662-9779, DOI 10.4028/www.scientific.net/SSP.213.29. - ISSN 978-3-03785-970-4
Примечания : Cited References: 21
Ключевые слова (''Своб.индексиров.''): ab initio calculations--diffusion--lithium-ion accumulators--silicon
Аннотация: Using the PAW DFT-GGA method and numerical solving of master equation the diffusion rates of lithium atoms inside both crystal and amorphous silicon of LixSi (x= 0.0.5) composition have been calculated for different temperatures. It is shown the diffusion rate for amorphous silicon is ~10 times greater than that for the crystal silicon. For both structures the rate is increased by 1.5-2 orders of magnitude while the lithium concentration is increased up to 0.5 value. This should result in that the LixSi/Si interface will be sharp. This fact has been further confirmed using molecular dynamic calculations based on Angular Dependent Potential (ADP) model. Also binding energies of Li atoms lying on different sites of Si (001) surface as well as the potential barriers for the atom jumps both along the surface and in the subsurface layers have been calculated. The data show the Li atoms move along the surface very easily but their jumps into subsurface layers are very difficult due to the high potential barrier values. В© (2014) Trans Tech Publications, Switzerland.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Mikhaleva N. S., Visotin M. A., Popov Z. I., Kuzubov A. A., Fedorov A. S.
Заглавие : Ab initio and empirical modeling of lithium atoms penetration into silicon
Место публикации : Comput. Mater. Sci.: Elsevier, 2015. - Vol. 109. - P.76-83. - ISSN 0927-0256, DOI 10.1016/j.commatsci.2015.06.024
Примечания : Cited References: 69. - The authors would like to thank the Institute of Computational Modeling SB RAS, Krasnoyarsk, Information Technology Centre Novosibirsk State University, for providing access to their computational resources. The reported study was supported by RFBR, research project No. 14-02-31071, 14-02-31309, 12-02-00640, by the Council of the President of the Russian Federation for Support of Young Scientists and Leading Scientific Schools (project No. NSh-2886.2014.2), Increase Competitiveness Program of NUST "MISiS" (No. K2-2015-033). The authors also would like to thank Prof. Stephan Irle and L.R. Moskvina for fruitful discussions and helpful ideas.
Предметные рубрики: LONG CYCLE LIFE
CORE-LEVEL SPECTROSCOPY
CARBON-COATED SILICON
AUGMENTED-WAVE METHOD
ION BATTERIES
MOLECULAR-DYNAMICS
INTERATOMIC POTENTIALS
ELECTRONIC-STRUCTURE
CRYSTALLINE SILICON
SI(100)2X1 SURFACE
Ключевые слова (''Своб.индексиров.''): li-ion batteries--silicon--surface diffusion--li diffusion--density functional theory--molecular dynamics
Аннотация: A process of lithium atoms penetration into silicon (1 0 0) subsurface layers was investigated with the help of DFT method. It was shown that, while the concentration of lithium adatoms on reconstructed (1 0 0) silicon surface is low, the bonding energy of lithium atoms in the subsurface layers is smaller than the bonding energy on the surface, so lithium atoms are unlikely to migrate into the crystal. When the (1 0 0) silicon surface is covered by 2 layers of lithium, migration into the subsurface layer becomes favorable. In addition to this, the reconstruction of the surface changes to the form with symmetric dimers as the concentration increases. Thus, all possible lithium migration paths become energy-wise equal, so the rate of lithium atom transfer into silicon crystal rises. In addition to the ab initio calculations, an ad-hoc empirical interatomic potential was developed and the kinetics of lithium diffusion into silicon were studied. It was shown that lithium penetration proceeds in a layer-by-layer way with a sharp border between undoped and lithiated silicon. This is accounted for the fact that, once a tetrahedral interstice is occupied by a lithium atom, the migration barriers between the adjacent interstices become lower and the rate of diffusion increases. © 2015 Elsevier B.V. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Михалева Н. С., Кузубов, Александр Александрович, Попов, Захар Иванович, Еремина А. Д., Высотин, Максим Александрович
Заглавие : Теоретическое исследование внедрения атомов лития в кремний
Место публикации : Вестник СибГАУ. - Красноярск: СибГАУ, 2015. - Т. 16, № 2. - С. 456-463. - ISSN 1816-9724
Примечания : Библиогр.: 55
Ключевые слова (''Своб.индексиров.''): диффузия--литий--кремний--dft--diffusion--lithium--silicon
Аннотация: Рассматривается процесс диффузии атомов лития в приповерхностные слои кремния (001). Расчеты выполнялись в рамках теории функционала плотности. Показано, что при малой концентрации лития на реконструированной поверхности кремния (001) энергия связи в подповерхностном слое ниже, чем на поверхности, что препятствует диффузии лития внутрь кристалла. Подобная ситуация существенно не меняется при увеличении температуры. Анализ частот перескока одиночных атомов лития с поверхности в приповерхностные слои показал, что в случае малых концентраций миграция атомарного Li будет осуществляться практически по одному пути реакции (из положения L-состояния, в котором литий находится в канале между димерами). При концентрации лития в два монослоя, наоборот, диффузия в подповерхностные слои становится более предпочтительна. Поскольку при достижении концентрации в один монослой происходит изменение симметрии димеров, диффузия лития внутрь кристалла также облегчается вследствие увеличения плотности положений в каналах между димерами. Таким образом, результат моделирования позволил объяснить причину экспериментального факта затруднения диффузии лития при прохождении через данную поверхность и определить пути возможной модификации поверхности, которая должна увеличить энергию связи атомов лития в приповерхностных состояниях при низких степенях заполнения им поверхности.The article deals with a theoretical investigation of lithium diffusion through silicon (001) surface within density functional theory formalism. It was shown that it is more energetically favorable for dilute lithium atoms to stay atop fully-relaxed silicon (001) surface than beneath it. This fact hampers the diffusion into the silicon crystal and the situation doesn't change significantly with increase in temperature. The frequencies of lithium atom hopping from the surface to the subsurface layers of silicon crystal were estimated. The analysis of frequencies for different transition paths indicates that in the case of dilute concentration Li atoms are likely to migrate through the surface from one type of sites (site L-located in channels between silicon dimers). With increasing of lithium concentration up to 1 monolayer and further, the silicon (001) surface swaps the asymmetric dimers reconstruction model for symmetric, leading to doubling of number of the sites in between silicon dimers. After the concentration reaches 2 monolayers, the binding energy of Li atoms on the surface becomes less than binding energy beneath the surface, so the diffusion turns to be thermodynamically allowed. As a result of the investigation, the ab-initio modeling puts light on the cause of experimentally observed decelerated lithium diffusion through silicon (001) surface and delivers an opportunity to determine possible techniques for surface modification, which will increase lithium atom binding energies in sites beneath silicon surface at low lithium concentrations.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Fedorov A. S., Visotin M. A.
Заглавие : Expansion of endohedral fullerene formation statistical model
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials, Азиатская школа-конференция по физике и технологии наноструктурированных материалов
Место публикации : Third Asian school-conference on physics and technology of nanostructured materials (ASCO-NANOMAT 2015): proceedings. - Vladivostok: Dalnauka, 2015. - Ст.V.22.09o. - P. - ISBN 978-5-8044-1556-4
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fedorov A. S., Popov Z. I., Kuzubov A. A., Visotin M. A.
Заглавие : Prediction and theoretical investigation of new 2D and 3D periodical structures, having graphene-like bandstructures
Место публикации : Phys. Status Solidi B. - 2015. - Vol. 252, Is. 11. - P.2407-2411. - ISSN 0370-1972, DOI 10.1002/pssb.201552226
Примечания : Cited References: 27. - This work was supported by the Ministry of Education and Science of Russia (Russian-Japanese joined project, Agreement No. 14.613.21.0010, ID RFMEFI61314 x 0010). The authors are grateful to the Joint Supercomputer Center of Russian Academy of Sciences, Moscow and Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk for the opportunity of using their computer clusters to perform the calculations
Предметные рубрики: BRILLOUIN-ZONE INTEGRATIONS
INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
DIRAC FERMIONS
ELECTRON-GAS
TRANSITION
POINTS
Ключевые слова (''Своб.индексиров.''): dft calculations--dirac cones--graphene--nanoparticles
Аннотация: A new family of planar nanostructures having graphene-like electronic band structure is theoretically investigated by density functional theory (DFT). Based on general perturbation theory and a tight-binding model, it was shown that graphene-like planar structures, consisting of identical nanoparticles with relatively weak contacts between them, should have an electronic band structure with Dirac cones. Two such structures, consisting of 71- or 114-silicon atom nanoparticles, were investigated by DFT using VASP software package. The band-structure calculations show the presence of Dirac cones with electron group velocity equal to 1.05 × 105 and 0.53 × 105 m/s, respectively. By generalizing the theory, a new family of 3D structures having intersecting areas with linear dispersion in the band structures was derived. As an example, the band structure of identical 25-atom silicon nanoclusters arranged in a simple cubic lattice was calculated. It was shown that the band structure has features similar to the Dirac cones.
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Вид документа : Статья из сборника (выпуск продолж. издания)
Шифр издания :
Автор(ы) : Fedorov A. S., Kovaleva E. A., Lubkova T. A., Popov Z. I., Kuzubov A. A., Visotin M. A., Irle S.
Заглавие : Molecular dynamical modelling of endohedral fullerenes formation in plasma
Коллективы : International Scientific Conference on Radiation-Thermal Effects and Processes in Inorganic Materials
Место публикации : IOP Conf. Ser.: Mater. Sci. Eng. - 2016. - Vol. 110, Is. 1. - , DOI 10.1088/1757-899X/110/1/012078
Аннотация: The initial stages of fullerene and endohedral metallofullerene (EMF) synthesis in carbon-helium plasma at 1500 K and 2500 K have been simulated with quantum chemical molecular dynamics (MD) based on density-functional tight-binding (DFTB). The cases of formation of large (>100 atoms) sp2-carbon clusters with scandium atoms inside were observed. These clusters are considered as precursors of fullerenes or EMFs, and thus it is shown that formation of EMFs can be explained within the framework of »shrinking hot giant« mechanism. Also, the dependence of formation rates on plasma parameters, including temperature, buffer gas and metal atoms concentrations, has been studied.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Fedorov A. S., Kuzubov A. A., Kovaleva E. A., Popova M. I., Kholtobina A. S., Mikhaleva N. S., Visotin M. A.
Заглавие : DFT investigation of electronic and optical magnetic properties of one dimensional transition metal halide structuresTmHaI3 : Invited
Коллективы : Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Siberian Federal Univercity, International Workshop on Actual Problems of Condensed Matter Physics
Место публикации : Int. workshop on actual probl. of cond. matt. phys.: Program. Book of abstracts/ Fed. Res. Center KSC SB RAS, Kirensky Inst. of phys., Sib. Fed. Univ. - Krasnoyarsk, 2017. - P.20
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov I. A., Visotin M. A., Solovyov L. A., Rautskii M. V., Zhandun V. S., Nemtsev I. V., Yakovlev I. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Iron silicides and pure iron epitaxial and highly-textured nanostructures on silicon: growth and their physical properties : Invited
Коллективы : Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Siberian Federal Univercity, International Workshop on Actual Problems of Condensed Matter Physics
Место публикации : International workshop on actual problems of condensed matter physics: Program. Book of abstracts/ Fed. Res. Center KSC SB RAS, Kirensky Inst. of phys., Sib. Fed. Univ. - Krasnoyarsk, 2017. - P.23 (Шифр В37/H99-812624296)
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Вид документа : Однотомное издание
Шифр издания :
Заглавие : International workshop on actual problems of condensed matter physics : Program. Book of abstracts
Выходные данные : Krasnoyarsk, 2017
Колич.характеристики :30 с
Коллективы : Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Siberian Federal Univercity, International Workshop on Actual Problems of Condensed Matter Physics (27 Mar. - 1 Apr. 2017; Krasnoyarsk/ Cheremushki) :
Содержание : Magnetic and transport properties of the epitaxial Fe3Si film on a Si substrate/ I. A. Bondarev. The magnetic anisotropy of the Fe and Fe(1-x)Si(x) thin films depend on/ I. A. Yakovlev [и др.]. Inverted opals as the Josephson networks of weak links/ S. I. Popkov [и др.]. Electronic structure and Fermi surface within the cluster perturbation theory in X-operators representation/ S. Nikolaev, V. I. Kuz'min, S. G. Ovchinnikov. DFT investigation of electronic and optical magnetic properties of one dimensional transition metal halide structuresTmHaI3/ A. S. Fedorov [и др.]. Effect of interatomic exchange interaction on spin crossover and Mott-Hubbard transition under high pressure and the physical properties of the low Earth’s mantle/ S. G. Ovchinnikov [и др.]. Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure/ I. A. Tarasov [и др.]. Marnetic-field sensitivity of charge transport in silicon-based hybrid structures/ N. V. Volkov [et al.]. Fabrication of multi-terminal planar devices based on epitaxial Fe1-xSix films grown on Si(111)/ A. V. Lukyanenko, A. S. Tarasov, I. A. Tarasov [et al.] ; A. V. Luyanenko [и др.]. Magnetic field-driven lateral photovoltaic effect in the Fe/SiO2/p-Si hibrid structure with the Scottky barrier/ M. V. Rautskii [и др.]. Small angle X-ray scattering and atomic structure of aptamer biomolecules/ R. Moryachkov [и др.]. Iron silicides and pure iron epitaxial and highly-textured nanostructures on silicon: growth and their physical properties/ I. A. Tarasov [и др.]. Magnetic nanoparticles and DNA-aptamers conjugates for diagnostics and therapy of cancer/ A. E. Sokolov [и др.]. The microscopic origin of ferromagnetism in Fe silicides/ I. S. Sandalov [и др.].
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fedorov A. S., Visotin M. A., Kholtobina A. S., Kuzubov A. A., Mikhaleva N. S., Hsu H. S.
Заглавие : Investigation of intrinsic defect magnetic properties in wurtzite ZnO materials
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : J. Magn. Magn. Mater.: Elsevier, 2017. - Vol. 440. - P.5-9. - ISSN 03048853 (ISSN), DOI 10.1016/j.jmmm.2016.12.130
Примечания : Cited References: 34. - We acknowledge the Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk; the Institute of Computational Modeling of SB RAS, Krasnoyarsk; the Joint Supercomputer Center of RAS, Moscow and the ICC of Novosibirsk State University for providing the computing resources. This work was supported by the president of Russia Scientific School program NSh 7559.2016.2 and by the government contract of the Ministry of Education and Science of the Russian Federation to Siberian Federal University (Grant No. 16.1500.2014/K) and RFBR 16–32-60003 mol_a_dk.
Ключевые слова (''Своб.индексиров.''): zno--diluted magnetic semiconductors--defects--thin films--dft calculations--magnetic circular dichroism
Аннотация: Theoretical and experimental investigations of the ferromagnetism induced by intrinsic defects inside wurtzite zinc oxide structures are performed using magnetic field-dependent circular dichroism (MCD-H), direct magnetization measurement (M-H) by superconducting quantum interference device (SQUID) as well as by generalized gradient density functional theory (GGA-DFT). To investigate localized magnetic moments of bulk material intrinsic defects - vacancies, interstitial atoms and Frenkel defects, various-size periodic supercells are calculated. It is shown that oxygen interstitial atoms (Oi) or zinc vacancies (Znv) generate magnetic moments of 1,98 и 1,26 µB respectively, however, the magnitudes are significantly reduced when the distance between defects increases. At the same time, the magnetic moments of oxygen Frenkel defects are large (~1.5–1.8 µB) and do not depend on the distance between the defects. It is shown that the origin of the induced ferromagnetism in bulk ZnO is the extra spin density on the oxygen atoms nearest to the defect. Also dependence of the magnetization of ZnO (101̅0)and(0001) thin films on the positions of Oi and Znv in subsurface layers were investigated and it is shown that the magnetic moments of both defects are significantly different from the values inside bulk material. In order to check theoretical results regarding the defect induced ferromagnetism in ZnO, two thin films doped by carbon (C) and having Zn interstitials and oxygen vacancies were prepared and annealed in vacuum and air, respectively. According to the MCD-H and M-H measurements, the film, which was annealed in air, exhibits a ferromagnetic behavior, while the other does not. One can assume annealing of ZnO in vacuum should create oxygen vacancies or Zn interstitial atoms. At that annealing of the second C:ZnO film in air leads to essential magnetization, probably by annihilation of oxygen vacancies, formation of interstitial oxygen atoms or zinc vacancies. Thus, our experimental results confirm our theoretical conclusions that ZnO magnetization origin are Oi or Znv defects.
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11.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fedorov A. S., Kuzubov A. A., Visotin M. A., Tomilin F. N.
Заглавие : New method for calculations of nanostructure kinetic stability at high temperature
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН , Russian Foundation for Basic Research [N15-02-06869A]; President of Russia Scientific School Program [NSh 7559.2016.2]
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P.167-170. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2016.12.131. - ISSN 1873-4766(eISSN)
Примечания : Cited References:8. - The work was supported by the Russian Foundation for Basic Research Grant N15-02-06869A and by President of Russia Scientific School Program NSh 7559.2016.2. The authors would like to thank Joint Supercomputer Center of RAS, Moscow, for the access to the MVS 100K cluster and Institute of Computational Modelling of SB RAS, Krasnoyarsk, for providing the computational resources.
Предметные рубрики: AUGMENTED-WAVE METHOD
Ключевые слова (''Своб.индексиров.''): kinetic stability--nanostructures--graphene nanoribbons
Аннотация: A new universal method is developed for determination of nanostructure kinetic stability (KS) at high temperatures, when nanostructures can be destroyed by chemical bonds breaking due to atom thermal vibrations. The method is based on calculation of probability for any bond in the structure to stretch more than a limit value L-max, when the bond breaks. Assuming the number of vibrations is very large and all of them are independent, using the central limit theorem, an expression for the probability of a given bond elongation up to L-max is derived in order to determine the KS. It is shown that this expression leads to the effective Arrhenius formula, but unlike the standard transition state theory it allows one to find the contributions of different vibrations to a chemical bond cleavage. To determine the KS, only calculation of frequencies and eigenvectors of vibrational modes in the groundstate of the nanostructure is needed, while the transition states need not be found. The suggested method was tested on calculating KS of bonds in some alkanes, octene isomers and narrow graphene nanoribbons of different types and widths at the temperature T=1200 K. The probability of breaking of the C-C bond in the center of these hydrocarbons is found to be significantly higher than at the ends of the molecules. It is also shown that the KS of the octene isomers decreases when the double C=C bond is moved to the end of the molecule, which agrees well with the experimental data. The KS of the narrowest graphene nanoribbons of different types varies by 1-2 orders of magnitude depending on the width and structure, while all of them are by several orders of magnitude less stable at high temperature than the hydrocarbons and benzene.
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12.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov I. A., Visotin M. A., Aleksandrovsky A. S., Kosyrev N. N., Yakovlev I. A., Molokeev M. S., Lukyanenko A. V., Krylov A. S., Fedorov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Si/Fe flux ratio influence on growth and physical properties of polycrystalline β-FeSi2 thin films on Si(100) surface
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН , Russian Science Foundation [16-13-00060]
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2017. - Vol. 440. - P.144-152. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2016.12.084. - ISSN 1873-4766(eISSN)
Примечания : Cited References:39. - This work was supported by the Russian Science Foundation, project no. 16-13-00060
Предметные рубрики: SEMICONDUCTING FESI2 FILMS
SPECTROSCOPIC ELLIPSOMETRY
EPITAXIAL-FILMS
Ключевые слова (''Своб.индексиров.''): β-fesi2 iron disilicide--optical properties--reflection high-energy--electron diffraction--raman spectroscopy--ab initio calculation
Аннотация: This work investigates the Si/Fe flux ratio (2 and 0.34) influence on the growth of β-FeSi2 polycrystalline thin films on Si(100) substrate at 630 °C. Lattice deformations for the films obtained are confirmed by X-ray diffraction analysis (XRD). The volume unit cell deviation from that of β-FeSi2 single crystal are 1.99% and 1.1% for Si/Fe =2 and Si/Fe =0.34, respectively. Absorption measurements show that the indirect transition (~ 0.704 eV) of the Si/Fe =0.34 sample changes to the direct transition with a bandgap value of ~0.816 eV for the sample prepared at Si/Fe =2. The absorption spectrum of the Si/Fe =0.34 sample exhibits an additional peak located below the bandgap energy value with the absorption maximum of ~0.36 eV. Surface magneto-optic Kerr effect (SMOKE) measurements detect the ferromagnetic behavior of the β-FeSi2 polycrystalline films grown at Si/Fe =0.34 at T=10 K, but no ferromagnetism was observed in the samples grown at Si/Fe =2. Theoretical calculations refute that the cell deformation can cause the emergence of magnetization and argue that the origin of the ferromagnetism, as well as the lower absorption peak, is β-FeSi2 stoichiometry deviations. Raman spectroscopy measurements evidence that the film obtained at Si/Fe flux ratio equal to 0.34 has the better crystallinity than the Si/Fe =2 sample.
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13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kuzubov A. A., Kovaleva E. A., Popova M. I., Kholtobina A. S., Mikhaleva N. S., Visotin M. A., Fedorov A. S.
Заглавие : DFT investigation of electronic structures and magnetic properties of halides family MeHal3 (Me=Ti, Mo,Zr,Nb, Ru, Hal=Cl,Br,I) one dimensional structures
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН , Russian Science Foundation [16-13-00060]; Russian Foundation for Basic Research [RFBR 16-32-60003 mol_a_dk]
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P.93-96. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2016.12.054. - ISSN 1873-4766(eISSN)
Примечания : Cited References:16. - This work was supported by the Russian Science Foundation, Project no. 16-13-00060. N.S.M. thanks the Russian Foundation for Basic Research, project RFBR 16-32-60003 mol_a_dk, for the financial support of ZrIINF3/INF, TiIINF3/INF and NbIINF3/INF electronic structure calculations
Предметные рубрики: INITIO MOLECULAR-DYNAMICS
TOTAL-ENERGY CALCULATIONS
AUGMENTED-WAVE
Ключевые слова (''Своб.индексиров.''): transition metal trihalides--magnetic properties--thermoelectric--conversion--density functional theory
Аннотация: Using DFT GGA calculations, electronic structure and magnetic properties of wide family of transition metal trihalides (TMHal3) (Zr, Ti and Nb iodides, Mo, Ru, Ti and Zr bromides and Ti or Zr chlorides) are investigated. These structures consist of transition metal atoms chains surrounded by halides atoms. Chains are connected to each other by weak interactions. All TMHal3 compounds were found to be conductive along chain axis except of MoBr3 which is indirect gap semiconductor. It was shown that NbI3 and MoBr3 have large magnetic moments on metal atoms (1.17 and 1.81 µB, respectively) but other TMHal3 materials have small or zero magnetic moments. For all structures ferromagnetic and anti-ferromagnetic phases have almost the same energies. The causes of these properties are debated.
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14.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Mikhaleva N. S., Visotin M. A., Kuzubov A. A., Popov Z. I.
Заглавие : VS2/7graphene heterostructures as promising anode material for Li-ion batteries
Место публикации : J. Phys. Chem. C. - 2017. - Vol. 121, Is. 43. - P.24179-24184. - ISSN 19327447 (ISSN), DOI 10.1021/acs.jpcc.7b07630
Примечания : Cited References: 64. - This work was supported by the government contract of the Ministry of Education and Science of the Russian Federation to Siberian Federal University (Grant No. 16.1455.2017/PCh). N. S. M. acknowledges the financial support of the RFBR, through the research project No. 16- 32-60003 mol-a-dk. M. A. V. acknowledges the financial support of the RFBR, through the research project No. 16-32- 00252 mol-a. Z. I. P. gratefully acknowledges the financial support of the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST MISiS (No. K2-2017-001) and the support of the RFBR through the research project No. 17-42- 190308 r-a.
Аннотация: Two-layer freestanding heterostructure consisting of VS2 monolayer and graphene was investigated by means of density functional theory computations as a promising anode material for lithium-ion batteries (LIB). We have investigated lithium atoms’ sorption and diffusion on the surface and in the interface layer of VS2/graphene heterostructure with both H and T configurations of VS2 monolayer. The theoretically predicted capacity of VS2/graphene heterostructures is high (569 mAh/g), and the diffusion barriers are considerably lower for the heterostructures than for bulk VS2, so that they are comparable to barriers in graphitic LIB anodes (∼0.2 eV). Our results suggest that VS2/graphene heterostructures can be used as a promising anode material for lithium-ion batteries with high power density and fast charge/discharge rates.
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15.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kholtobina A. S., Tsyplenkova D. I., Kuzubov A. A., Visotin M. A., Fedorov A. S.
Заглавие : Quantum-chemical research of endohedral yttrium metallofullerenes
Место публикации : J. Sib. Fed. Univ. Math. Phys. - 2017. - Vol. 10, Is. 4. - P.422-428. - ISSN 19971397 (ISSN), DOI 10.17516/1997-1397-2017-10-4-422-428; Журн. СФУ. Сер. "Математика и физика"
Примечания : This work was supported by the Russian Foundation for Basic Research (no. 16-43-242148), Krasnoyarsk Regional Science Foundation (agreement 35/16 dated 18.11.2016) and by the pres- ident of Russia Scientific School program NSh 7559.2016.2.
Ключевые слова (''Своб.индексиров.''): density functional theory--endohedral metallofullerenes--ferroelectric properties--y@c82
Аннотация: The structural and electronic properties of single molecule Y@C82, their join couple and crystal structure of Y@C82 were investigated by DFT-GGA approach. The calculations show that Y@C82 form stable crystal structures wich may have ferroelectric properties, so they can be applied in electronics as a ferroelectric memory.Структурные и электронные свойства одиночного комплекса Y@C82, структуры, состоящей из двух комплексов Y@C82, а также данного комплекса в периодических условиях были исследованы в рамках DFT-GGA–подхода. Моделирование эндоэдральных металлофуллеренов Y@C82 показало возможность формирования из них стабильных кристаллических структур, которые обладают сегнетоэлектрическими свойствами, что может быть применено в электронике и сегнетоэлектрической памяти.
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16.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov I. A., Visotin M. A., Kuznetzova T. V., Aleksandrovsky A. S., Solovyov L. A., Kuzubov A. A., Nikolaeva K. M., Fedorov A. S., Tarasov A. S., Tomilin F. N., Volochaev M. N., Yakovlev I. A., Smolyarova T. E., Ivanenko A. A., Pryahina V. I., Esin A. A., Yarmoshenko Y. M., Shur V. Y., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Selective synthesis of higher manganese silicides: a new Mn17Si30 phase, its electronic, transport, and optical properties in comparison with Mn4Si7
Место публикации : J. Mater. Sci. - 2018. - Vol. 53, Is. 10. - P.7571–7594. - ISSN 00222461 (ISSN), DOI 10.1007/s10853-018-2105-y
Примечания : Cited References: 62. - This work was supported by the Russian Science Foundation, Project No. 16-13-00060. Aleksandr S. Aleksandrovsky thanks RFBR Grant No. 17-52-53031 for partial work related to the NIR measurements in section “Optical Properties”. The authors are grateful to Dr. A.V. Mudriy of Minsk State University for technical assistance. The equipment of the Center for Shared Use of Federal Research Center KSC SB RAS and the Ural Center “Modern Nanotechnology” of Ural Federal University was used.
Ключевые слова (''Своб.индексиров.''): semiconducting silicon compounds
Аннотация: The electronic structure, transport and optical properties of thin films of Mn4Si7 and Mn17Si30 higher manganese silicides (HMS) with the Nowotny “chimney-ladder” crystal structure are investigated using different experimental techniques and density functional theory calculations. Formation of new Mn17Si30 compound through selective solid-state reaction synthesis proposed and its crystal structure is reported for the first time, the latter belonging to I-42d. Absorption measurements show that both materials demonstrate direct interband transitions around 0.9 eV, while the lowest indirect transitions are observed close to 0.4 eV. According to ab initio calculations, ideally structured Mn17Si30 is a degenerate n-type semiconductor; however, the Hall measurements on the both investigated materials reveal their p-type conductivity and degenerate nature. Such a shift of the Fermi level is attributed to introduction of silicon vacancies in accordance with our DFT calculations and optical characteristics in low photon energy range (0.076–0.4 eV). The Hall mobility for Mn17Si30 thin film was found to be 25 cm2/V s at T = 77 K, being the highest among all HMS known before. X-ray photoelectron spectroscopy discloses a presence of plasmon satellites in the Mn4Si7 and Mn17Si30 valence band spectra. Experimental permittivity spectra for the Mn4Si7 and Mn17Si30 compounds in a wide range (0.076–6.54 eV) also indicate degenerate nature of both materials and put more emphasis upon the intrinsic relationship between lattice defects and optical properties.
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17.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov I. A., Visotin M. A., Kuznetsova T. V., Solovyov L. A., Fedorov A. S., Yakovlev I. A., Tarasov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : A way for targeted synthesis of higher manganese silicides: a new Mn17Si3O phase and its distinctive features
Коллективы : Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Research Institute of Agriculture and Ecology of the Arctic, Siberian Federal Univercity
Место публикации : International school/workshop on actual problems of condensed matter physics: Program. Book of abstracts/ ed. S. G. Ovchinnikov. - Norilsk, 2018. - P.14-15. - ISBN 978-5-904603-08-3
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18.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Fedorov A. S., Visotin M. A.
Заглавие : Ab initio investigations of nanostructures for their application as nanostructured thermoelectric materials
Коллективы : Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Research Institute of Agriculture and Ecology of the Arctic, Siberian Federal Univercity
Место публикации : International school/workshop on actual problems of condensed matter physics: Program. Book of abstracts/ ed. S. G. Ovchinnikov. - Norilsk, 2018. - P.18. - ISBN 978-5-904603-08-3
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19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Manakhov A., Fukova S., Necas D., Michlicek M., Ershov S., Elias M., Visotin M. A., Popov Z., Zajickova L.
Заглавие : Analysis of epoxy functionalized layers synthesized by plasma polymerization of allyl glycidyl ether
Место публикации : Phys. Chem. Chem. Phys. - 2018. - Vol. 20, Is. 30. - P.20070-20077. - ISSN 14639076 (ISSN), DOI 10.1039/c8cp01452c
Примечания : Cited References: 32. - Authors gratefully acknowledge the financial support of the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST ‘‘MISiS’’ (K4-2016-005), implemented by a governmental decree dated 16th of March 2013, N 211. Authors also acknowledge the project CEITEC 2020 (LQ1601) with financial support from the Ministry of Education, Youth and Sports of the Czech Republic (MEYS CR) under the National Sustainability Programme II. Part of the work was carried out with the support of CEITEC Nano Research Infrastructure (MEYS CR, 2016–2019). MM is a Brno PhD Talent scholarship holder – funded by Brno city municipality.
Аннотация: The deposition of epoxide groups by plasma polymerization opens new horizons for robust and quick immobilization of biomolecules on any type of substrate. However, as of now there are just very few papers dealing with the deposition of epoxy layers by plasma polymerization, probably due to the high reactivity of this group leading to a low functionalization efficiency. In this work we carried out an extensive experimental and theoretical investigation of plasma synthesis of epoxide groups from a low pressure allyl glycydyl ether (AGE) plasma. The influence of composite parameter W/F and the working pressure on the density of epoxide groups and the layer stability was thoroughly addressed. It was found that by increasing the working pressure it is possible to sufficiently raise the concentration of epoxide groups. The composite parameter W/F was shown to be a crucial parameter in affecting the density of epoxides. An optimal value of W/F of around 2.3 eV per molecule leading to the highest density of epoxides produced in the process at 15 Pa was revealed through FT-IR and XPS findings. This value correlates well with the ab initio calculations suggesting that the lowest bond dissociation energy belongs to the C-O bond of the epoxide ring. Therefore, in order to increase the density of epoxides deposited by plasma polymerization, a precursor molecule containing at least two epoxide rings is strongly advised to be employed.
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20.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Chepkasov I. V., Visotin M. A., Kovaleva E. A., Manakhov A. M., Baidyshev V. S., Popov Z. I.
Заглавие : Stability and electronic properties of PtPd nanoparticles via MD and DFT calculations
Коллективы : Russian Foundation for Basic Research (RFBR) [17-42-190308-r]; Foundation for Assistance to Small Innovative Enterprises (FASIE) [0033625, 0033639]; Ministry of Education and Science of the Russian Federation (the government contract to Siberian Federal University) [16.1455.2017/PCh]
Место публикации : J. Phys. Chem. C. - 2018. - Vol. 122, Is. 31. - P.18070-18076. - ISSN 1932-7447, DOI 10.1021/acs.jpcc.8b04177
Примечания : Cited References: 62. - The authors are grateful to Vladislav A. Kalyuzhny for the assistance with the computational resources. The research is carried out using the equipment of the shared research facilities of HPC computing resources at Lomonosov Moscow State University and resources of the Center for the Information and Computing of Novosibirsk State University. The work was supported by the Russian Foundation for Basic Research (RFBR no. 17-42-190308-r) and Foundation for Assistance to Small Innovative Enterprises (FASIE) (Project no. 0033625). E.A.K. would also like to thank the Ministry of Education and Science of the Russian Federation (the government contract to Siberian Federal University, grant no. 16.1455.2017/PCh) and the Foundation for Assistance to Small Innovative Enterprises (FASIE) (Project no. 0033639).
Предметные рубрики: OXYGEN REDUCTION REACTION
CORE-SHELL NANOPARTICLES
GAS-PHASE
Аннотация: The structural as well as electronic properties of PtPd nanoparticles (NPs) were investigated by using molecular dynamics simulations and density functional theory calculations. A wide range of NPs of different sizes (from 1.5 to 4 nm), structures (core–shell, alloy, Janus), and compositions were taken into consideration. It was shown that PtPd NPs of less than ∼2.0 nm are prone to structural transformations to icosahedral (Ih) shape, regardless of their initial structure and composition. On the other hand, for NPs of size ∼2.5 nm, the increase of temperature up to 700–900 K leads to structural changes only for compositions close to 40% Pt, which corresponds to energetic minimum for Pt@Pd NPs. The Ih form of Pd@Pt NPs with monolayer thickness of Pt on the surface appears to have the most negatively charged surface which makes this kind of NPs the best candidate for catalysis application.
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