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OVCHINNIKOV, S. G.
CHANGE OF THE DENSITY OF STATES WITH HOLE DOPING IN CUO2 LAYERS / S. G. OVCHINNIKOV // Zhurnal Eksperimentalnoi Teor. Fiz. - 1993. - Vol. 103, Is. 4. - P. 1404-1410. - Cited References: 7 . - ISSN 0044-4510

РУБ Physics, Multidisciplinary

Аннотация: By means of the exact diagonalization of the many-electron hamiltonian the single-particle density of states is calculated for CuO4 cluster. For undoped case there is a dielectric gap in which new states arise with hole doping. The concentration dependence of the Fermi level is found and the critical concentration of the insulator-metal Anderson transition is evaluated.

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Patrin, G. S.
The ''easy plane easy axis'' transition in alpha-Fe2O3:Ga crystals induced by doping with terbium ions / G. S. Patrin, N. V. Volkov, V. N. Vasiliev // Phys. Lett. A. - 1997. - Vol. 230, Is. 1-2. - P. 96-98, DOI 10.1016/S0375-9601(97)00219-3. - Cited References: 10 . - ISSN 0375-9601

РУБ Physics, Multidisciplinary

Аннотация: In easy plane weak ferromagnetic alpha-Fe2O3:Ga crystals it was found that doping with a hundredth part of To ions leads to the restoration of the transition into the ''easy axis'' magnetic state. It was established that in the alpha-Fe2O3:Ga, Tb crystal the angular magnetic phase is realized. (C) 1997 Published by Elsevier Science B.V.

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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Vasiliev, V. N.; Патрин, Геннадий Семёнович
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Evolution of the band structure of quasiparticles with doping in copper oxides on the basis of a generalized tight-binding method / V. A. Gavrichkov [et al.] // J. Exp. Theor. Phys. - 2000. - Vol. 91, Is. 2. - P. 369-383, DOI 10.1134/1.1311997. - Cited References: 45 . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
T-J MODEL
   CUPRATE SUPERCONDUCTORS
   ELECTRONIC-STRUCTURE
   EXCITATIONS
   DEPENDENCE
   TEMPERATURE
   DERIVATION
   SR2CUO2CL2
   SPECTRUM
   DENSITY
Аннотация: Two methods for stabilizing the two-hole B-3(1g) state as the ground state instead of the Zhang-Rice singlet are determined on the basis of an orthogonal cellular basis for a realistic multiband pd model of a CuO2 layer and the dispersion relations for the valence band top in undoped and doped cases are calculated. In the undoped case, aside from the valence band, qualitatively corresponding to the experimental ARPES data for Sr2CuO2Cl2 and the results obtained on the basis of the t-t'-J model, the calculations give a zero-dispersion virtual level at the valence band top itself. Because of the zero amplitude of transitions forming the virtual level the response corresponding to it is absent in the spectral density function. In consequence, the experimental ARPES data do not reproduce its presence in this antiferromagnetic undoped dielectric. A calculation of the doped case showed that the virtual level transforms into an impurity-type band and acquires dispersion on account of the nonzero occupation number of the two-hole states and therefore should be detected in ARPES experiments as a high-energy peak in the spectral density. The computed dispersion dependence for the valence band top is identical to the dispersion obtained by the Monte Carlo method, and the ARPES data for optimally doped Bi2Sr2CaCu2O8 + delta samples. The data obtained also make it possible to explain the presence of an energy pseudogap at the symmetric X point of the Brillouin band of HTSC compounds. (C) 2000 MAIK "Nauka/Interperiodica".

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Публикация на русском языке Эволюция зонной структуры квазичастиц с допированием в оксидах меди в рамках обобщенного метода сильной связи [Текст] / В. А. Гавричков [и др.] // Журн. эксперим. и теор. физ. - 2000. - Т. 118 Вып. 2. - С. 422-437

Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Div, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Gavrichkov, V. A.; Гавричков, Владимир Александрович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Borisov, A. A.; Goryachev, E. G.
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Magnetic and optical properties and electron paramagnetic resonance of gadolinium-containing oxide glasses / J. . Kliava [et al.] // J. Phys.: Condens. Matter. - 2003. - Vol. 15, Is. 40. - P. 6671-6681, DOI 10.1088/0953-8984/15/40/005. - Cited References: 30 . - ISSN 0953-8984

РУБ Physics, Condensed Matter
Рубрики:
ABSORPTION-SPECTRA
   FARADAY-ROTATION
   SPIN-RESONANCE
   IONS
   GD3+
   SPECTROSCOPY
   BEHAVIOR
   GD-3
Кл.слова (ненормированные):
Doping (additives) -- Electronic structure -- Glass -- Lanthanum compounds -- Light absorption -- Magnetic susceptibility -- Oxides -- Paramagnetic resonance -- Positive ions -- Rate constants -- Substitution reactions -- Absorption band -- Gadolinium containing oxide glasses -- Positive Weiss constants -- Gadolinium compounds
Аннотация: Magnetic susceptibility, electron paramagnetic resonance (EPR) and optical absorption have been studied in a glass system 20La(2)O(3)-22Al(2)O(3)-23B(2)O(3)-35(SiO2 + GeO2) with a part of La2O3 substituted by Gd2O3 in different concentrations. Positive Weiss constants have been found in more heavily doped glasses and ascribed to clustering of Gd3+ ions. Computer simulations of the EPR spectra show that the short-range ordering in the environment of the Gd3+ ions is well preserved. The relative distribution widths of the ligand coordinates are less than 2%. In the more heavily doped glasses the EPR spectra are superpositions of signals arising from isolated ions and ferromagnetic clusters. The increase of Gd3+ concentration is shown to change substantially the strong optical absorption edge while only small changes of f-f absorption band characteristics are observed. This difference is associated with the different effect of the Gd ion clustering on the mechanisms of the strong absorption in the ultraviolet region and the f-f absorption.

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Держатели документа:
Univ Bordeaux 1, CPMOH, F-33405 Talence, France
SI Vavilov State Opt Inst, St Petersburg 199034, Russia
Bar Ilan Univ, Dept Chem, IL-52900 Ramat Gan, Israel
Bar Ilan Univ, Dept Phys, IL-52900 Ramat Gan, Israel
RAS, SB, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН
CPMOH, Universite Bordeaux-I, 33405 Talence Cedex, France
L V Kirensky Inst. of Physics, SB RAS, Krasnoyarsk 660036, Russian Federation
Bar-Ilan University, Department of Physics, Ramat-Gan 52900, Israel
Bar-Ilan University, Department of Chemistry, Ramat-Gan 52900, Israel
S V Vavilov State Optical Institute, St Petersburg 199034, Russian Federation

Доп.точки доступа:
Kliava, J.; Edelman, I. S.; Эдельман, Ирина Самсоновна; Potseluyko, A. M.; Petrakovskaja, E. A.; Петраковская, Элеонора Анатольевна; Berger, R.; Bruckental, I.; Yeshurun, Y.; Malakhovskii, A. V.; Малаховский, Александр Валентинович; Zarubina, Y. V.
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Borisov, A. A.
Doping dependence of the band structure and chemical potential in cuprates by the generalized tight-binding method / A. A. Borisov, V. A. Gavrichkov, S. G. Ovchinnikov // Mod. Phys. Lett. B. - 2003. - Vol. 17, Is. 10-12. - P. 479-486, DOI 10.1142/S0217984903005500. - Cited References: 12 . - ISSN 0217-9849

РУБ Physics, Applied + Physics, Condensed Matter + Physics, Mathematical
Рубрики:
CORRELATED ELECTRONS
SUPERCONDUCTIVITY
OXIDES
Аннотация: Quasiparticle band structure in hole doped CuO2 layer is calculated with account for strong electron correlations in the framework of multiband p-d model. For undoped layer we obtain the charge-transfer antiferromagnetic insulator. With doping unusual impurity-like quasiparticle appears at the top of the valence band with spectral weight proportional to doping concentration. In the overdoped regime the band structure in the paramagnetic phase results in the doping dependent Fermi surface in agreement to ARPES data.

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Держатели документа:
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
Krasnoyarsk State Univ, Theoret Phys Chair, Krasnoyarsk 660041, Russia
ИФ СО РАН

Доп.точки доступа:
Gavrichkov, V. A.; Гавричков, Владимир Александрович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; International Conference on Modern Problems in Superconductivity(3 ; 2002 ; Sept. ; 9-14 ; Yalta, Ukrain)
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Borisov, A. A.
Temperature and concentration dependences of the electronic structure of copper oxides in the generalized tight binding method / A. A. Borisov, V. A. Gavrichkov, S. G. Ovchinnikov // J. Exp. Theor. Phys. - 2003. - Vol. 97, Is. 4. - P. 773-780, DOI 10.1134/1.1625067. - Cited References: 25 . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
SUPERCONDUCTING-GAP ANISOTROPY
   BAND-STRUCTURE
   FERMI-SURFACE
   NORMAL-STATE
   BI2SR2CACU2O8+DELTA
   EVOLUTION
Кл.слова (ненормированные):
Doping (additives) -- Electron transitions -- Electronic structure -- Fermi level -- Fermi surface -- Electron correlations -- Pseudogap -- Tight binding method -- Valence band -- Copper oxides
Аннотация: The electronic structure of p-type doped HTSC cuprates is calculated by explicitly taking into account strong electron correlations. The smooth evolution of the electronic structure from undoped antiferromagnetic to optimally and heavily doped paramagnetic compositions is traced. For a low doping level, in-gap impurity-type states are obtained, at which the Fermi level is pinned in the low-doping region. These states are separated by a pseudogap from the valence band. The Fermi surfaces calculated for the paramagnetic phase for various concentrations of holes are in good agreement with the results of ARPES experiments and indicate a gradual change in the Fermi surface from the hole type to the electron type. (C) 2003 MAIK "Nauka/Interperiodica".

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Публикация на русском языке Борисов, Алексей Александрович. Температурная и концентрационная зависимости электронной структуры оксидов меди в обобщенном методе сильной связи [Текст] / А. А. Борисов, В. А. Гавричков, С. Г. Овчинников // Журн. эксперим. и теор. физ. - 2003. - Т. 124 Вып. 4. - С. 862-870

Держатели документа:
Russian Acad Sci, Siberian Div, Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН
Kirenskii Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Gavrichkov, V. A.; Гавричков, Владимир Александрович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
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Effective parameters of the band dispersion in n-type high-T-c superconductors / M. M. Korshunov [et al.] // Physica C. - 2004. - Vol. 402, Is. 4. - P. 365-370, DOI 10.1016/j.physc.2003.10.017. - Cited References: 32 . - ISSN 0921-4534

РУБ Physics, Applied
Рубрики:
DOPED CUPRATE SUPERCONDUCTORS
   TIGHT-BINDING METHOD
   QUASI-PARTICLES
   COPPER OXIDES
   LA2-XSRXCUO4
   SYMMETRY
   MODEL
   EVOLUTION
   ORDER
Кл.слова (ненормированные):
high-T-c superconductivity -- electronic correlations -- electron-doped cuprates -- Electron-doped cuprates -- Electronic correlations -- High-Tc superconductivity -- Approximation theory -- Atomic physics -- Band structure -- Binding energy -- Charge transfer -- Correlation methods -- Doping (additives) -- Electronic structure -- Hamiltonians -- Mathematical models -- Mathematical operators -- Oxide superconductors -- Perturbation techniques -- Photoelectron spectroscopy -- Atomic orbitals -- Conduction band -- Electron doped cuprates -- Electron spins -- Valence band -- High temperature superconductors
Аннотация: The electronic structure of electron-doped cuprates is discussed in the regions of small and optimal doping. For optimal doping we obtain the parameters from a simple tight-binding analysis by fitting ARPES data, and for small doping we study the band structure by the generalized tight-binding method that takes strong electronic correlations into account explicitly. This method has also reproduced well the ARPES data for small doping. The effective low-energy Hamiltonian is the t-t'-J model with hopping parameters t and t'. We compare both methods and find very good agreement for the value of t while t' is different because it is caused by the different contribution of the short-range spin correlations. (C) 2003 Elsevier B.V. All rights reserved.

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Держатели документа:
Free Univ Berlin, Inst Theoret Phys, D-14195 Berlin, Germany
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
ИФ СО РАН
L.V. Kirensky Institute of Physics, Siberian Branch, Russian Academy of Science, Krasnoyarsk 660036, Russian Federation
Inst. fur Theoretische Physik, Freie Universitat Berlin, Arnimallee 14, D-14195 Berlin, Germany

Доп.точки доступа:
Korshunov, M. M.; Коршунов, Максим Михайлович; Gavrichkov, V. A.; Гавричков, Владимир Александрович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Manske, D.; Eremin, I.
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Prediction of the in-gap states above the top of the valence band in undoped insulating cuprates due to the spin-polaron effect / S. G. Ovchinnikov [et al.] // J. Phys.: Condens. Matter. - 2004. - Vol. 16, Is. 8. - P. L93-L100, DOI 10.1088/0953-8984/16/8/L04. - Cited References: 25 . - ISSN 0953-8984

РУБ Physics, Condensed Matter
Рубрики:
ELECTRONIC-STRUCTURE
   LA2-XSRXCUO4
   MODEL
   ANTIFERROMAGNETISM
   SPECTRA
   OXIDES
Кл.слова (ненормированные):
Quasiparticle band structure -- Spin-polaron effect -- Antiferromagnetic materials -- Approximation theory -- Doping (additives) -- Electronic structure -- Hamiltonians -- Insulation -- Magnetic fields -- Strontium compounds -- Thermal effects -- Lanthanum compounds
Аннотация: In the framework of the generalized tight binding method we have calculated the quasiparticle band structure and the spectral functions of the undoped cuprates such as La2CuO4, Sr2CUO2Cl2 etc. Due to spin fluctuations the in-gap state appears above the top of the valence band in the undoped antiferromagnetic insulator similar to in-gap states induced by hole doping. In the ARPES experiments the in-gap states can be detected as weak low energy satellites.

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Держатели документа:
Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН
L V Kirensky Institute of Physics, Siberian Branch, Russian Academy of Science, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Borisov, A. A.; Gavrichkov, V. A.; Гавричков, Владимир Александрович; Korshunov, M. M.; Коршунов, Максим Михайлович
}
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Gavrichkov, V. A.
The band structure of n-type cuprate superconductors with the T '(T) structure taking into account strong electron correlation / V. A. Gavrichkov, S. G. Ovchinnikov // J. Exp. Theor. Phys. - 2004. - Vol. 98, Is. 3. - P. 556-564, DOI 10.1134/1.1705708. - Cited References: 18. - This work was financially supported by the Russian Foundation for Basic Research (project no. 03-02-16124), RFFI-KKFN “Eniseœ” (project no. 02-02-97705), INTAS (project no. 01-0654), integration program of URO and Siberian Division, Russian Academy of Sciences . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
QUASI-PARTICLES
   COPPER OXIDES
   TEMPERATURE
   LA2-XSRXCUO4
   ND2-XCEXCUO4
   EVOLUTION
   MOMENTS
Кл.слова (ненормированные):
Dielectric properties -- Electric conductance -- Electron transitions -- Electronic structure -- Fermi level -- Phase diagrams -- Semiconductor doping -- Conduction bands -- Electron correlation -- Spectral density -- Superconducting materials
Аннотация: The spectral density, dispersion relations, and the position of the Fermi level for n-doped compositions based on NCO and LCO were calculated within the framework of the generalized tight binding method. As distinguished from LCO, the dielectric gap in NCO is nonlinear in character. We observe a virtual level both at the bottom of the conduction band and at the top of the valence band in both compounds. However, its position corresponds to the extreme bottom of the conduction band in LCO and is 0.1 - 0.2 eV above the bottom in NCO. This explains why we observe Fermi level pinning in n-LCO as the concentration of the doping component grows and reproduce its absence in NCCO at low doping values. We also found both compositions to be unstable in a narrow concentration range with respect to a nonuniform charge density distribution. The relation between the phase diagram for NCCO and the calculated electronic structure is discussed. (C) 2004 MAIK "Nauka/Interperiodica".

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Публикация на русском языке Гавричков, Владимир Александрович. Зонная структура купратных сверхпроводников n-типа с T'(T)-структурой при учете сильных электронных корреляций [Текст] / В. А. Гавричков, С. Г. Овчинников // Журн. эксперим. и теор. физ. - 2004. - Т. 125 Вып. 3. - С. 630-639

Держатели документа:
Russian Acad Sci, Siberian Div, Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН
Kirenskii Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Гавричков, Владимир Александрович
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10.

Parameters of the effective singlet-triplet model for band structure of high-T-c cuprates by alternative approaches / M. M. Korshunov [et al.] // J. Exp. Theor. Phys. - 2004. - Vol. 99, Is. 3. - P. 559-565, DOI 10.1134/1.1809685. - Cited References: 48 . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
DENSITY-FUNCTIONAL CALCULATION
   TIGHT-BINDING METHOD
   COPPER OXIDES
   ENERGY-BANDS
   SUPERCONDUCTORS
   HOLE
   LA2-XSRXCUO4
   PLANE
   SR2CUO2CL2
   INSULATORS
Кл.слова (ненормированные):
Band structure -- Carbon dioxide lasers -- Copper oxides -- Doping (additives) -- Parameter estimation -- Electron systems -- Generalized tight binding (GTB) -- Parameters extraction -- Singlet triplet model -- Technetium compounds
Аннотация: We consider the problem of determining the parameters for high-T-c superconducting copper oxides. Alternative approaches, the ab initio LDA and LDA + U calculations and the generalized tight-binding (GTB) method for strongly correlated electron systems, are used to calculate hopping and exchange parameters of the effective singlet-triplet model for the CuO2 layer. The resulting parameters are in remarkably good agreement with each other and with parameters extracted from experiment. This set of parameters is proposed for proper quantitative description of the physics of hole-doped high-T-c cuprates in the framework of effective models. (C) 2004 MAIK "Nauka / Interperiodica".

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Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Siberian Div, Krasnoyarsk 660036, Russia
Russian Acad Sci, Inst Met Phys, Ural Div, Ekaterinburg 620219, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Institute of Metal Physics, Ural Division, Russian Academy of Sciences, Ekaterinburg, 620219, Russian Federation

Доп.точки доступа:
Korshunov, M. M.; Коршунов, Максим Михайлович; Gavrichkov, V. A.; Гавричков, Владимир Александрович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Pchelkina, Z. V.; Nekrasov, I. A.; Korotin, M. A.; Anisimov, V. I.
}
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11.

Ovchinnikov, S. G.
Electronic structure and its evolution with doping in cuprates with account for strong electron correlations / S. G. Ovchinnikov, V. A. Gavrichkov, M. M. Korshunov // Physica B. - 2005. - Vol. 359: International Conference on Strongly Correlated Electron Systems (SCES 04) (JUL 26-30, 2004, Karlsruhe, GERMANY). - P. 1168-1170, DOI 10.1016/j.physb.2005.01.311. - Cited References: 4 . - ISSN 0921-4526

РУБ Physics, Condensed Matter

Кл.слова (ненормированные):
strong electron correlations -- multiband p-d model -- spin-polaron effect
Аннотация: The electronic structure of the undoped and p- and n-type doped cuprates is studied in the framework of the multiband p-d model using the generalized tight binding method. With hole doping, an unusual in-gap state appears just at the top of the valence band with the spectral weight proportional to the doping concentration. The chemical potential dependence on the hole and electron concentration is asymmetrical and in good agreement with the experimental data. The in-gap bands have spin-polaron origin and the spectral function of this band has a form of small low-energy satellite that can be detected in ARPES measurements. (c) 2005 Elsevier B.V. All rights reserved.

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Держатели документа:
LV Kirenskii Inst Phys, RAS, Siberian Branch, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Gavrichkov, V. A.; Гавричков, Владимир Александрович; Korshunov, M. M.; Коршунов, Максим Михайлович; Овчинников, Сергей Геннадьевич
}
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12.

Korshunov, M. M.
Effective Hamiltonian and the properties of normal and superconductive phases of n-type cuprates / M. M. Korshunov, S. G. Ovchinnikov, A. V. Sherman // Physica B. - 2005. - Vol. 359: International Conference on Strongly Correlated Electron Systems (SCES 04) (JUL 26-30, 2004, Karlsruhe, GERMANY). - P. 521-523, DOI 10.1016/j.physb.2005.01.134. - Cited References: 13 . - ISSN 0921-4526

РУБ Physics, Condensed Matter
Рубрики:
MODEL
SYMMETRY
Кл.слова (ненормированные):
strong electron correlations -- superconductivity -- multiband p-d model -- n-type cuprates -- Multiband p-d model -- n-type cuprates -- Strong electron correlations -- Superconductivity -- Antiferromagnetism -- Correlation theory -- Fermi surface -- Hamiltonians -- Mathematical models -- Microscopic examination -- Oxide superconductors -- Phase diagrams -- Semiconductor doping -- Generalized tight-binding (GTB) -- Multiband p-d models -- N-type cuprates -- Single electron correlations -- Superconductivity
Аннотация: In the framework of the effective low-energy model for high-T-c, cuprates with account for three-center interaction terms and spin fluctuations the properties of normal and superconducting phases of n-type cuprates are investigated. Microscopic model parameters were obtained from ARPES data in undoped compounds. Obtained evolution of the chemical potential with doping, Fermi surface at optimal doping, and T-c(x) phase diagram are in remarkably good agreement with the experiment. (c) 2005 Elsevier B.V. All rights reserved.

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Держатели документа:
Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Univ Tartu, Inst Phys, EE-51014 Tartu, Estonia
ИФ СО РАН
LV Kirensky Institute of Physics, Siberian Br. of Russ. Acad. of Sci., Krasnoyarsk, 660036, Russian Federation
Institute of Physics, University of Tartu, Riia 142, 51014 Tartu, Estonia

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Sherman, A. V.; Коршунов, Максим Михайлович
}
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13.

Thin fullerene-containing films synthesized by ion beam sputtering of fullerene mixtures with doping additives in vacuum / A. P. Semenov [et al.] // Tech. Phys. Lett. - 2005. - Vol. 31, Is. 12. - P. 1022-1025, DOI 10.1134/1.2150887. - Cited References: 11 . - ISSN 1063-7850

РУБ Physics, Applied
Рубрики:
DISCHARGE
Аннотация: A new approach to the synthesis of films containing fullerenes and doping elements is described. It is suggested that a cluster mechanism of the target sputtering by accelerated ions makes possible the deposition of fullerenes on a substrate with a certain probability for dopant atoms being introduced into the cavities of fullerene molecules and a higher probability of their occurrence between fullerene molecules. The proposed method has been experimentally implemented by using an Ar+ ion beam to sputter C-60 /C-70 fullerene mixtures (synthesized in a plasmachemical reactor at a pressure of 10(5) Pa) pressed into disk targets with a doping element (Fe, Na, B, Gd, or Se). The ion beam sputtering of dopant-containing fullerene mixtures in a vacuum of similar to 10(-2) Pa allowed micron-thick films containing C-60 and C-70 fullerenes and the corresponding dopant element (Fe, Na, B, Gd, or Se) to be grown on quartz substrates. (C) 2005 Pleiades Publishing, Inc.

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Держатели документа:
Russian Acad Sci, Siberian Div, Presidium Buryatian Sci Ctr, Dept Phys Problems, Ulan Ude, Buryatia, Russia
Russian Acad Sci, Siberian Div, LV Kirensky Phys Inst, Krasnoyarsk, Russia
Russian Acad Sci, Siberian Div, Inst Geol, Ulan Ude, Buryatia, Russia
ИФ СО РАН
Department for Physical Problems, Presidium of the Buryatian Scientific Center, Russian Academy of Sciences, Ulan-Ude, Buryatia, Russian Federation
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Krasnoyarsk, Russian Federation
Institute of Geology, Siberian Division, Russian Academy of Sciences, Ulan-Ude, Buryatia, Russian Federation

Доп.точки доступа:
Semenov, A. P.; Semenova, I. A.; Bulina, N. V.; Булина, Наталья Васильевна; Lopatin, V. A.; Лопатин, Владислав Александрович; Karmanov, N. S.; Churilov, G. N.; Чурилов, Григорий Николаевич
}
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14.

Gavrichkov, V. A.
Doping dependent electronic structure of cuprates and the effective low energy Hamiltonian for the magnetic pairing / V. A. Gavrichkov, M. M. Korshunov, S. G. Ovchinnikov // Int. J. Mod. Phys. B. - 2005. - Vol. 19, Is. 1-3. - P. 247-249, DOI 10.1142/S0217979205028335. - Cited References: 14 . - ISSN 0217-9792

РУБ Physics, Applied + Physics, Condensed Matter + Physics, Mathematical
Рубрики:
COPPER OXIDES
SYMMETRY
MODEL
Кл.слова (ненормированные):
electronic structure -- strong electron correlations -- magnetic mechanism of pairing -- Electronic structure -- Magnetic mechanism of pairing -- Strong electron correlations -- copper derivative -- calculation -- chemical reaction -- chemical structure -- conference paper -- correlation analysis -- electron -- electronics -- energy -- hybridization -- intermethod comparison -- magnetism -- mathematical analysis -- mathematical model
Аннотация: The properties of the normal and superconducting phases of p- and n-type cuprates are investigated in the appropriate low-energy models in the approximation beyond Hubbard I considering spin fluctuations. Calculated chemical potential dependence on doping, Fermi surface and T,(x) phase diagram for n-type cuprates are in remarkably good agreement with the experimental ones. Comparison of the singlet-triplet t-J model with simple t-J model shows that the spin-exciton mechanism originated from singlet-triplet hybridization leads to small contribution to the T-c(x) - optimal doping value becomes slightly lower and the maximum value of T-c become slightly higher.

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Держатели документа:
Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН
L. V. Kirensky Inst. Phys. S., Russian Academy of Science, Akademgorodok, 660036, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Korshunov, M. M.; Коршунов, Максим Михайлович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Гавричков, Владимир Александрович; International Conference on New Theories, Discoveries and Applications of Superconductors and Related Materials(5 ; 2004 ; June ; 11-16 ; Chongqing, China)
}
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15.

Gavrichkov, V. A.
The role of orbital ordering in the formation of electron structure in undoped LaMnO3 manganites in the regime of strong electron correlations / V. A. Gavrichkov, S. G. Ovchinnikov, L. E. Yakimov // J. Exp. Theor. Phys. - 2006. - Vol. 102, Is. 6. - P. 972-985, DOI 10.1134/S1063776106060112. - Cited References: 25 . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
COLOSSAL MAGNETORESISTIVE OXIDES
   DOUBLE EXCHANGE
   BAND
   MODEL
Кл.слова (ненормированные):
Computational methods -- Correlation methods -- Doping (additives) -- Electrons -- Ferromagnetic materials -- Lanthanum compounds -- Paramagnetic materials -- Intraatomic electron correlations -- Mott Hubbard correlation gap -- Orbital ordering -- Paramagnetic phases -- Electronic structure
Аннотация: The electron structure of undoped LaMnO3 and slightly doped La1-xSrxMnO3 manganites has been calculated within the framework of a generalized tight binding method with explicit allowance for strong intra-atomic electron correlations. According to the results of these calculations, the ground state in orbitally disordered undoped LaMnO3 ferromagnets would be metallic despite the Mott-Hubbard correlation gap in the spectrum of quasiparticles. Owing to the orbital ordering, the insulating state is stabilized in both antiferromagnetic and paramagnetic phases. In-gap states of a polaron nature with a spectral weight proportional to the dopant concentration have been found near the top of the valence band in La1-xSrxMnO3. As the doping level increases, a metal state appears in the ferromagnetic phase, which has a metallic character for one spin subband and an insulating character for the other subband (representing the so-called half-metallic state).

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Публикация на русском языке Гавричков, Владимир Александрович. Роль орбитального упорядочения в формировании электронной структуры недопированных манганитов LaMnO3 в режиме сильных электронных корреляций [Текст] / В. Г. Архипкин, С. А. Мысливец, И. В. Тимофеев // Журн. эксперим. и теор. физ. - 2006. - Т. 129 Вып. 6.- P.1103-1117

Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Div, Krasnoyarsk 660036, Russia
Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Siberian State Aerospace University, Krasnoyarsk, 660014, Russian Federation

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Yakimov, L. E.; Гавричков, Владимир Александрович
}
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16.

Planar doping of crystalline fullerene with cobalt [Text] / V. Lavrentiev [et al.] // Chemical Physics Letters. - 2006. - Т. 423, № 4-6. - P366-370, DOI 10.1016/j.cplett.2006.03.087 . - ISSN 0009-2614. - ISSN 1873-4448

ГРНТИ

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Держатели документа:
Advanced Science Research Center,Japan Atomic Energy Agency
INTERCI,Independent Scientific Center
Доп.точки доступа:
Lavrentiev, V.; Naramoto, H.; Narumi, K.; Sakai, S.; Avramov, P.
}
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17.

Enhancement of pinning in cerium doped Y(1-x)CexBa2Cu3O7HTSC / M. I. Petrov [et al.] // Physica C. - 2007. - Vol. 460: 8th International Conference on Materials and Mechanisms of Superconductivity and High Temperature Superconductors (JUL 09-14, 2006, Dresden, GERMANY). - P. 1192-1193, DOI 10.1016/j.physc.2007.04.046. - Cited References: 2 . - ISSN 0921-4534

РУБ Physics, Applied

Кл.слова (ненормированные):
HTSC -- YBCO -- Ce doped -- flux pinning -- Ce doped -- Flux pinning -- HTSC -- YBCO -- Cerium -- Doping (additives) -- Flux pinning -- Lattice constants -- Magnetization -- Yttrium compounds -- Cerium ions -- Diamagnetic responses -- Temperature dependence -- High temperature superconductors
Аннотация: To test the pinning force in high-temperature superconductors with minor doping, the Y(1-x)CexBa2Cu3O7 system has been synthesized. Temperature dependence of magnetization has been determined. The difference of diamagnetic responses M(zfc) - M(fc) is non-monotonic. It has a peak at a concentration value x = 0.0156, which corresponds to the most probable distance between cerium ions equal to eight lattice constants in the a-b plane and close to the diameter of vortices. (c) 2007 Elsevier B.V. All rights reserved.

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Держатели документа:
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН
Kirensky Institute of Physics, 660036 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Petrov, M. I.; Петров, Михаил Иванович; Balaev, D. A.; Балаев, Дмитрий Александрович; Gokhfeld, Yu. S.; Гохфельд, Юлия Сергеевна; Dubrovskiy, A. A.; Дубровский, Андрей Александрович; Shaykhutdinov, K. A.; Шайхутдинов, Кирилл Александрович
}
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18.

Effect of strontium and barium doping on the magnetic state and electrical conductivity of GdCoO3 / N. B. Ivanova [et al.] // Phys. Solid State. - 2007. - Vol. 49, Is. 8. - P. 1498-1506, DOI 10.1134/S1063783407080161. - Cited References: 36 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
PEROVSKITE
   ORDER
   OXIDE
   BEHAVIOR
   GLASSES
   LACOO3
   PR
   GD
   SM
   ND
Аннотация: A coordinated investigation of the magnetic and electrical properties of polycrystalline cobalt oxide compounds CdCoO3, Gd0.9Ba0.1CoO3, and Gd0.9Sr0.1CoO3 is carried out. Undoped GdCoO3 reveals a low conductivity; a magnetic moment of 7.4 mu(B) per molecule, which is less than the theoretical value for the Gd3+ ion; and an asymptotic Curie temperature of -6 K. Doping GdCoO3 with barium and strontium to substitution of 10 at. % Gd brings about an increase in the conductivity and magnetic transitions at T = 300 K for Gd0.9Ba0.1CoO3 and T = 170 K for Gd0.9Sr0.1CoO3. The magnetization anomalies imply the formation of magnetic clusters. The behavior of the electrical conductivity at high temperatures suggests a variable activation energy. At low temperatures, Mott hopping conduction sets in.

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Публикация на русском языке Влияние допирования стронцием и барием на магнитное состояние и электропроводность GdCoO[3] [Текст] / Н. Б. Иванова [и др.] // Физ. тверд. тела. - 2007. - Т. 49 Вып. 8. - С. 1427-1435

Держатели документа:
Russian Acad Sci, Siberian Div, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Univ Guadalajara, CUCEI, Dept Fis, Guadalajara 44430, Jalisco, Mexico
ИФ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Departmento de Fisica, C.U.C.E.I., Universidade de Guadalajara, Guadalajara, Jalisco 44430, Mexico

Доп.точки доступа:
Ivanova, N. B.; Иванова, Наталья Борисовна; Kazak, N. V.; Казак, Наталья Валерьевна; Michel, C. R.; Balaev, A. D.; Балаев, Александр Дмитриевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Vasil'ev, A. D.; Васильев, Александр Дмитриевич; Bulina, N. V.; Булина, Наталья Васильевна; Panchenko, E. B.
}
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19.

Korshunov, M. M.
Doping-dependent evolution of low-energy excitations and quantum phase transitions within an effective model for high-T-c copper oxides / M. M. Korshunov, S. G. Ovchinnikov // Eur. Phys. J. B. - 2007. - Vol. 57, Is. 3. - P. 271-278, DOI 10.1140/epjb/e2007-00179-2. - Cited References: 49 . - ISSN 1434-6028

РУБ Physics, Condensed Matter
Рубрики:
ELECTRON CORRELATIONS
   HUBBARD-MODEL
   RANGE-ORDER
   DIMENSIONS
   WAVE
   FERMIONS
   SYSTEMS
   BANDS
   METAL
Кл.слова (ненормированные):
Doping dependent evolution -- Kinematic correlation functions -- Low energy excitations -- Quantum phase transitions -- Doping (additives) -- Electric excitation -- Mean field theory -- Parameter estimation -- Phase transitions -- Quantum theory -- Copper oxides
Аннотация: In this paper a mean-field theory for the spin-liquid paramagnetic non-superconducting phase of the p- and n-type high-T-c cuprates is developed. This theory applied to the effective t-t'-t ''-J* model with the ab initio calculated parameters and with the three-site correlated hoppings. The static spin-spin and kinematic correlation functions beyond Hubbard-I approximation are calculated self-consistently. The evolution of the Fermi surface and band dispersion is obtained for the wide range of doping concentrations x. For p-type systems the three different types of behavior are found and the transitions between these types are accompanied by the changes in the Fermi surface topology. Thus a quantum phase transitions take place at x = 0.15 and at x = 0.23.Due to the different Fermi surface topology we found for n-type cuprates only one quantum critical concentration, x = 0.2. The calculated doping dependence of the nodal Fermi velocity and the effective mass are in good agreement with the experimental data.

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
Max Planck Inst Phys Komplexer Syst, D-01187 Dresden, Germany
ИФ СО РАН
L.V. Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, 660036 Krasnoyarsk, Russian Federation
Max-Planck-Institut fur Physik Komplexer Systeme, 01187 Dresden, Germany

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Коршунов, Максим Михайлович
}
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20.

Magnetic order in FeCr2S4-type chalcogenide spinels / F. J. Berry [et al.] // J. Phys.: Condens. Matter. - 2007. - Vol. 19, Is. 26. - Ст. 266204, DOI 10.1088/0953-8984/19/26/266204. - Cited References: 15 . - ISSN 0953-8984

РУБ Physics, Condensed Matter
Рубрики:
COLOSSAL-MAGNETORESISTANCE
TRANSITION
Кл.слова (ненормированные):
Doping (additives) -- Iron compounds -- Magnetization -- Magnetoresistance -- Mossbauer spectroscopy -- X ray absorption fine structure spectroscopy -- Chalcogenide spinels -- Low temperature magnetic behaviour -- Magnetic ordering temperature -- Thiospinels -- Chalcogenides
Аннотация: The thiospinels of composition FeCr2S4 and Fe1+xCr2-2xSnxS4 with 0 < x < 0.1 have been examined by means of extended x- ray absorption fine structure, Mossbauer spectroscopy and magnetoresistance techniques. The structural characterization shows that tin enters the spinel- related lattice as Sn4+ and occupies the octahedral B site. Appreciable magnetoresistance is observed in the temperature range 160 - 185 K which includes the magnetic ordering temperature. The effect of slight non- stoichiometry in FeCr2S4 and of tin doping is observed in the M r ossbauer spectra which show the Fe2+ ions to occupy the tetrahedral A sites. The M r ossbauer spectra recorded around the magnetic ordering temperature are sensitive to small ( 0.03 T) applied magnetic fields. The influence of tin on the low temperature magnetic behaviour is associated with the distribution of Cr3+, Sn4+ and Fe3+ ions around tetrahedral Fe2+ sites and vacancies in the anionic sublattice. An interpretation of the colossal magnetoresistance phenomena below TN is suggested.

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Держатели документа:
Open Univ, Dept Chem, Milton Keynes MK7 6AA, Bucks, England
Russian Acad Sci, AV Shubnikov Crystallog Inst, Moscow 119333, Russia
Univ Liverpool, Dept Phys, Liverpool L69 3BX, Merseyside, England
Russian Acad Sci, Inst Inorgan & Gen Chem, Moscow 119907, Russia
Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН
Department of Chemistry, Open University, Walton Hall, Milton Keynes MK7 6AA, United Kingdom
A V Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninsky avenue 59, Moscow 119333, Russian Federation
Department of Physics, University of Liverpool, Liverpool L69 3BX, United Kingdom
Institute of Inorganic and General Chemistry, Russian Academy of Sciences, Leninsky avenue 31, Moscow 119907, Russian Federation
L V Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation

Доп.точки доступа:
Berry, F. J.; Dmitrieva, T. V.; Ovanesyan, N. S.; Lyubutin, I. S.; Thomas, M. F.; Sarkisyan, V. A.; Ren, X.; Aminov, T. G.; Shabunina, G. G.; Rudenko, V.; Vorotynov, A. M.; Воротынов, Александр Михайлович; Dubinskaya, Y. L.
}
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