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Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect / D. A. Smolyakov, A. S. Tarasov, M. A. Bondarev [et al.] // Mater. Sci. Semicond. Process. - 2021. - Vol. 126. - Ст. 105663, DOI 10.1016/j.mssp.2021.105663. - Cited References: 21. - This study was supported by the Government of the Russian Federation , Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886) . - ISSN 1369-8001
Кл.слова (ненормированные):
Semiconductors -- Magnetoimpedance -- Impurities -- Implantation
Аннотация: A silicon structure doped with Ga using ion implantation has been investigated by admittance spectroscopy. It has been established that the presence of the Ga impurity, along with the B one, in the silicon structure leads to the appearance of the second peak in the temperature dependence of the real part of the impedance (admittance). Moreover, switching-on a magnetic field parallel to the sample plane shifts the singularities in the temperature curve to the high-temperature region. This results in the manifestation of both the positive and negative magnetoresistance effect upon temperature and magnetic field variation. It has been found by the standard admittance spectroscopy analysis of the impedance data that the energy structure of the investigated sample includes two interfacial energy levels ES1(0) = 42 meV and ES2(0) = 69.4 meV. As expected, these energies are consistent with the energies of B and Ga dopants. In a magnetic field, these levels increase by 3 meV for B and 2 meV for Ga, which induces the magnetoresistance effect. It has been demonstrated that the interfacial state-induced magnetoresistance effect can be tuned by ion implantation and dopant selection.

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Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences660036, Russian Federation
Lobachevsky State University, Nizhny Novgorod603950, Russian Federation

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Bondarev, M. A.; Бондарев, Михаил Александрович; Nikolskaya, A. A.; Vasiliev, V. K.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Volkov, N. V.; Волков, Никита Валентинович
}
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Aver'yanov, E. M.
Manifestations of the higher moments of the orientation distribution function of molecules in the spectral properties of an impurity nematic / E. M. Aver'yanov, V. G. Rumyantsev // J. Exp. Theor. Phys. - 2004. - Vol. 98, Is. 6. - P. 1146-1151, DOI 10.1134/1.1777627. - Cited References: 15 . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
LIQUID-CRYSTAL
   SCATTERING
   PHASES
   MATRIX
   ORDER
   DYES
Кл.слова (ненормированные):
Absorption -- Band structure -- Impurities -- Molecular dynamics -- Polarization -- Spectrum analysis -- Distribution function -- Local field parameters -- Splitting -- Temperature dependence -- Nematic liquid crystals
Аннотация: The polarized electronic absorption spectra, orientation ordering, and the special local field features were studied for push-pull linear dye molecules with strong donor-acceptor electronic conjugation of terminal fragments in the matrix of a nematic liquid crystal. The temperature-induced inversion of the sign of the splitting of polarized impurity absorption bands was observed. This effect was shown to be caused by the statistical character of orientation ordering of impurity molecules and manifestation of the higher moments of the orientation distribution function. The dependence of local field parameters (Lorentz tensor components) of impurity molecules on their orientation ordering was established. This dependence was used to reproduce the temperature dependence of the orientation order parameter of the matrix. (C) 2004 MAIK "Nauka / Interperiodica".

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Div, Krasnoyarsk 660036, Russia
Res Inst Organ Intermediates & Dyes, Dolgoprudnyi 141700, Moscow Oblast, Russia
ИФ СО РАН
Kirenskii Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk, 660036, Russian Federation
Research Institute of Organic Intermediates and Dyes, Dolgoprudnyi, Moscow oblast, 141700, Russian Federation

Доп.точки доступа:
Rumyantsev, V. G.; Аверьянов, Евгений Михайлович
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Bulgakov, E. N.
Symmetry breaking for transmission in a photonic waveguide coupled with two off-channel nonlinear defects / E. N. Bulgakov, K. N. Pichugin, A. F. Sadreev // Phys. Rev. B. - 2011. - Vol. 83, Is. 4. - Ст. 45109, DOI 10.1103/PhysRevB.83.045109. - Cited References: 50. - This work was partially supported by RFBR Grant No. 09-02-98005-"Siberia" and RFBR Grant No. 11-02-00289. . - ISSN 1098-0121

РУБ Physics, Condensed Matter
Рубрики:
CRYSTAL-CIRCUITS
   LOCALIZED MODES
   BISTABILITY
   IMPURITIES
   RESONANCE
   CAVITIES
   STATES
   MEDIA
Аннотация: We consider light transmission in a two-dimensional (2D) photonic crystal waveguide coupled with two identical nonlinear defects positioned symmetrically aside the waveguide. With the coupled mode theory, we show three scenarios for the transmission. The first one inherits the linear case and preserves the symmetry. In the second scenario, the symmetry is broken because of different light intensities at the defects. In the third scenario, the intensities at the defects are equal but phases of complex amplitudes are different. That results in a vortical power flow between the defects similar to the dc Josephson effect if the input power over the waveguide is applied and the defects are coupled. All of these phenomena agree well with computations based on an expansion of the electromagnetic field into optimally adapted photonic Wannier functions in a 2D photonic crystal.

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Держатели документа:
[Bulgakov, Evgeny
Pichugin, Konstantin
Sadreev, Almas] LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
[Bulgakov, Evgeny] Siberian State Aerosp Univ, Krasnoyarsk, Russia

Доп.точки доступа:
Pichugin, K. N.; Пичугин, Константин Николаевич; Sadreev, A. F.; Садреев, Алмаз Фаттахович; Булгаков, Евгений Николаевич
}
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Comparing the magnetic and magnetoelectric properties of the SmFe3(BO3)4 ferroborate single crystals grown using different solvents / E. Eremin [et al.] // J. Cryst. Growth. - 2019. - Vol. 518. - P. 1-4, DOI 10.1016/j.jcrysgro.2019.04.017. - Cited References: 17. - This study was supported by the Russian Foundation for Basic Research (RFBR) according to the research projects No. 18-02-00696_a and RFBR, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund by project No. 18-42-240011 p_a. . - ISSN 0022-0248. - ISSN 1873-5002

РУБ Crystallography + Materials Science, Multidisciplinary + Physics, Applied
Рубрики:
POLARIZATION
FEATURES
Кл.слова (ненормированные):
Impurities -- Growth from solutions -- Single crystal growth -- Borates -- Ferroelectric materials -- Magnetic materials
Аннотация: SmFe3(BO3)4 single crystals have been grown from the bismuth trimolybdate and lithium tungstate-based melt–solutions. Samarium ferroborate single crystals were grown first from the lithium–tungstate flux. The magnetic and magnetoelectric properties of the synthesized crystals have been compared. It is shown that the SmFe3(BO3)4 ferroborate grown from the bismuth trimolybdate-based melt–solution contains impurities of Bi3+ ions (∼5% at.), which replace Sm3+ ions, while the SmFe3(BO3)4, ferroborate grown from the lithium tungstate-based melt–solution contains minor or zero amounts of such impurities. The magnetoelectric and magnetodielectric effects with the Bi3+ admixture appeared 1.5× stronger than in SmFe3(BO3)4; this is probably due to twinning.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Siberian State Univ Sci & Technol, Krasnoyarsk 660037, Russia.

Доп.точки доступа:
Eremin, E. V.; Еремин, Евгений Владимирович; Gudim, I. A.; Гудим, Ирина Анатольевна; Temerov, V. L.; Темеров, Владислав Леонидович; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Molokeev, M. S.; Молокеев, Максим Сергеевич; Russian Foundation for Basic Research (RFBR) [18-02-00696_a]; RFBR, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [18-42-240011 p_a]
}
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Decisive proofs of the s± → s++ transition in the temperature dependence of the magnetic penetration depth / V. A. Shestakov, M. M. Korshunov, Y. N. Togushova, O. V. Dolgov // Supercond. Sci. Technol. - 2021. - Vol. 34, Is. 7. - Ст. 075008, DOI 10.1088/1361-6668/abff6f. - Cited References: 40. - We are grateful to D V Efremov, A S Fedorov, S G Ovchinnikov, E I Shneyder, D Torsello, and A N Yaresko for useful discussions. This work was supported in part by the Russian Foundation for Basic Research (RFBR) Grant No. 19-32-90109 and by RFBR and Government of Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science to the Research Projects 'Electronic correlation effects and multiorbital physics in iron-based materials and cuprates' Grant No. 19-42-240007. . - ISSN 0953-2048. - ISSN 1361-6668

РУБ Physics, Applied + Physics, Condensed Matter
Рубрики:
ORDER-PARAMETER
   IMPURITIES
   SUPERCONDUCTORS
   STATES
   MODEL
Кл.слова (ненормированные):
unconventional superconductors -- iron pnictides -- iron chalcogenides -- impurity scattering -- penetration depth
Аннотация: One of the features of the unconventional s± state in iron-based superconductors is possibility to transform to the s++ state with the increase of the nonmagnetic disorder. Detection of such a transition would prove the existence of the s± state. Here we study the temperature dependence of the London magnetic penetration depth within the two-band model for the s± and s++ superconductors. By solving Eliashberg equations accounting for the spin-fluctuation mediated pairing and nonmagnetic impurities in the T-matrix approximation, we have derived a set of specific signatures of the s± → s++ transition: (1) sharp change in the behavior of the penetration depth λL as a function of the impurity scattering rate at low temperatures; (2) before the transition, the slope of ΔλL(T) = λL(T) - λL(0) increases as a function of temperature, and after the transition this value decreases; (3) the sharp jump in the inverse square of the penetration depth as a function of the impurity scattering rate, λL-2(Γa), at the transition; (4) change from the single-gap behavior in the vicinity of the transition to the two-gap behavior upon increase of the impurity scattering rate in the superfluid density ρs(T).

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Держатели документа:
RAS, Fed Res Ctr KSC SB, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
RAS, PN Lebedev Phys Inst, Moscow 119991, Russia.
Donostia Int Phys Ctr, San Sebastian 20018, Spain.

Доп.точки доступа:
Shestakov, V. A.; Шестаков, Вадим Андреевич; Korshunov, M. M.; Коршунов, Максим Михайлович; Togushova, Yu. N.; Тогушова Ю. Н.; Dolgov, O., V; Russian Foundation for Basic Research (RFBR)Russian Foundation for Basic Research (RFBR) [19-32-90109]; RFBRRussian Foundation for Basic Research (RFBR); Government of Krasnoyarsk Territory; Krasnoyarsk Regional Fund of Science to the Research Projects 'Electronic correlation effects and multiorbital physics in iron-based materials and cuprates' [19-42-240007]
}
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Disorder-induced transition between s(+/-) and s(++) states in two-band superconductors / D. V. Efremov [et al.] // Phys. Rev. B. - 2011. - Vol. 84, Is. 18. - Ст. 180512, DOI 10.1103/PhysRevB.84.180512. - Cited References: 31. - The authors are grateful to S.-L. Drechsler, P. Fulde, I. I. Mazin, V. Mishra, and D. J. Scalapino for useful discussions. The present work was partially supported by the DFG Priority Programme SPP1458 (D.V.E.), Dutch FOM(A.A.G.), DOEDE-FG02-05ER46236 (P.J.H. and M.M.K.), and RFBR 09-02-00127, Presidium of RAS program N5.7, FCP GK P891, and GK 16.740.12.0731, and President of Russia MK-1683.2010.2 (M.M.K.). P.J.H. and M.M.K. are grateful for the support of the Kavli Institute for Theoretical Physics and the Stanford Institute for Materials & Energy Science during the writing of this work. . - ISSN 1098-0121

РУБ Physics, Condensed Matter
Рубрики:
HIGH-TEMPERATURE SUPERCONDUCTIVITY
IMPURITIES
DENSITY
Аннотация: We have reexamined the problem of disorder in two-band superconductors, and shown, within the framework of the T-matrix approximation, that the suppression of T-c can be described by a single parameter depending on the intraband and interband impurity scattering rates. T-c is shown to be more robust against nonmagnetic impurities than would be predicted in the trivial extension of Abrikosov-Gor'kov theory. We find a disorder-induced transition from the s(+/-) state to a gapless and then to a fully gapped s(++) state, controlled by a single parameter-the sign of the average coupling constant (lambda). We argue that this transition has strong implications for experiments.

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Держатели документа:
[Efremov, D. V.
Dolgov, O. V.] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[Korshunov, M. M.
Hirschfeld, P. J.] Univ Florida, Dept Phys, Gainesville, FL 32611 USA
[Korshunov, M. M.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Korshunov, M. M.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
[Golubov, A. A.] Univ Twente, Fac Sci & Technol, NL-7500 AE Enschede, Netherlands
[Golubov, A. A.] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands
ИФ СО РАН
Max-Planck-Institut fur Festkorperforschung, D-70569 Stuttgart, Germany
Department of Physics, University of Florida, Gainesville, FL 32611, United States
L. V. Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, 660036 Krasnoyarsk, Russian Federation
Siberian Federal University, Svobodny Prospect 79, 660041 Krasnoyarsk, Russian Federation
Faculty of Science and Technology, MESA+ Institute of Nanotechnology, University of Twente, NL-7500 AE Enschede, Netherlands

Доп.точки доступа:
Efremov, D. V.; Korshunov, M. M.; Коршунов, Максим Михайлович; Dolgov, O. V.; Golubov, A. A.; Hirschfeld, P. J.
}
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Does magnetic scattering always suppress superconducting transition? / O. V. Dolgov [et al.] // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. I2.5. - P. 125. - We acknowledge partial support by RFBR (Grant RFBR 16-02-00098) . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
unconventional superconductivity -- impurities, pnictides -- multiband systems

Доп.точки доступа:
Dolgov, O. V.; Korshunov, M. M.; Коршунов, Максим Михайлович; Golubov, A. A.; Efremov, D. V.; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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Dolgov, O. V.
Temperature-dependent s±↔s++ transitions in multiband Fe-based superconductors with impurities / O. V. Dolgov, V. A. Shestakov, M. M. Korshunov // SNS 2019 Spectroscopies in novel superconductors : Abstract [Program]. - 2019. - Ст. P-Tu-16. - P. 102. - Cited References: 2
Аннотация: We study the dependence of the superconducting gaps on both the disorder and the

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Доп.точки доступа:
Shestakov, V. A.; Шестаков, Вадим Андреевич; Korshunov, M. M.; Коршунов, Максим Михайлович; International Conference on Spectroscopies in Novel Superconductors(2019 ; June ; 16-21 ; Tokyo, Japan)
}
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Effect of cobalt impurity ions on the magnetic and electrical properties of iron monosilicide crystals / G. S. Patrin [et al.] // J. Exp. Theor. Phys. - 2011. - Vol. 112, Is. 2. - P. 303-309, DOI 10.1134/S1063776111010146. - Cited References: 23 . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
GAP FORMATION
FESI
Кл.слова (ненормированные):
Concentration dependence -- Electrical property -- Energy structures -- Experimental data -- Experimental investigations -- Field dependence -- Impurity ions -- Kondo models -- Magnetic and electrical properties -- Si crystals -- Cobalt -- Crystal impurities -- Crystals -- Magnetic susceptibility -- Electric properties
Аннотация: The results of experimental investigations of Fe1 - x Co (x) Si crystals in the impurity limit with x = 0.001, 0.005, and 0.01 are reported. The temperature and field dependences of the magnetic susceptibility have been studied. According to the experimental data, the introduction of cobalt impurity leads to a change in the energy structure, which is most pronounced in a change in the electrical properties. The temperature, field, and concentration dependences of the resistivity have been measured. The results have been interpreted in the framework of the Kondo model.

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Держатели документа:
[Patrin, G. S.
Velikanov, D. A.
Volkov, N. V.
Yurkin, G. Yu.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Patrin, G. S.
Beletskii, V. V.] Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk 660041, Russian Federation

Доп.точки доступа:
Patrin, G. S.; Патрин, Геннадий Семёнович; Beletskii, V. V.; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Volkov, N. V.; Волков, Никита Валентинович; Yurkin, G. Yu.
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10.

Effect of impurities on the successive phase transitions in (Cs1-xRbx)(2)ZnI4 compounds / I. P. Aleksandrova [et al.] // J. Phys.: Condens. Matter. - 2002. - Vol. 14, Is. 49. - P. 13623-13634, DOI 10.1088/0953-8984/14/49/316. - Cited References: 27 . - ISSN 0953-8984

РУБ Physics, Condensed Matter
Рубрики:
X-RAY
   CS2ZNI4
   SYSTEM
   HEAT
Кл.слова (ненормированные):
Phase transitions -- Point defects -- Specific heat -- Temperature -- X ray diffraction analysis -- Zinc compounds -- Lock-in transition -- Nuclear quadrupole resonance -- Single crystals
Аннотация: The heat capacity, nuclear quadrupole resonance (NQR) and x-ray diffraction of (Cs1-xRbx)(2)ZnI4 single crystals have been measured, for x = 0, 0.001, 0.005, 0.01, 0.025 and 0.05. The normal to incommensurate (N-Inc) phase transition at T-I, the incommensurate to commensurate (Inc-C) lock-in transition at T-L and the structural commensurate monoclinic to triclinic transition at T-LT, observed in the parent compound (x = 0), takes place for x = 0, 0.001, 0.005 and 0.01. For x = 0.025 only T-I and T-L are detected, while for x = 0.05 no transitions were observable. The values of T-I and T-L increase with x while T-LT decreases and disappears at the concentration x = 0.025. The effect of defects, besides modifying the transition temperatures, is that of broadening and lowering the heat capacity anomaly at the lock-in transition until its total quenching for x = 0.05. No observable hysteresis is detected in this transition. NQR and x-ray diffraction data show the Inc-C transition up to the highest concentration. We conclude that this phenomenology is caused by weak interaction of the incommensurate modulation with point defects even in the region close to the Inc-C transition.

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
Univ Zaragoza, CSIC, Inst Ciencia Mat Aragon, E-50009 Zaragoza, Spain
ИФ СО РАН
L V Kirenski Institute of Physics, Russian Academy of Sciences, Siberian Branch, 660036 Krasnoyarsk, Russian Federation
Inst. de Ciencia de Mat. de Aragon, CSIC-Universidad de Zaragoza, 50009 Zaragoza, Spain

Доп.точки доступа:
Aleksandrova, I. P.; Александрова, Инга Петровна; Bartolome, J.; Falvello, L. R.; Torres, J. M.; Sukhovskii, A. A.; Суховский, Андрей Андреевич
}
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