Библиотека института физики им. Л.В. Киренского СО РАН

Главная

Базы данных

Труды сотрудников ИФ СО РАН - результаты поиска

Вид поиска

Каталог книг и брошюр библиотеки ИФ СО РАН

Каталог журналов библиотеки ИФ СО РАН

Труды сотрудников ИФ СО РАН

Область поиска

в найденном

Найдено в других БД:

Каталог книг и брошюр библиотеки ИФ СО РАН (5)

Каталог журналов библиотеки ИФ СО РАН (1)

Формат представления найденных документов:
полный	информационный	краткий

Отсортировать найденные документы по:
автору	заглавию	году издания	типу документа

Поисковый запрос: (<.>K=Interfaces<.>)

Общее количество найденных документов : 47
Показаны документы с 1 по 10

1-10 11-20 21-30 31-40 41-47

Forming High-Temperature Superconducting Layers at the Interfaces between Nonsuperconducting Phases / M. I. Petrov, S. I. Popkov, K. Y. Terent’ev, A. D. Vasil’ev // Tech. Phys. Lett. - 2020. - Vol. 46, Is. 10. - P. 1004-1007, DOI 10.1134/S1063785020100247. - Cited References: 14. - The authors are grateful to D.M. Gokhfeld for comments made during the discussion of the results. The results were obtained using a Bruker D8Advance diffractometer (Bruker AXS) and the Quantum Design PPMS vibrating sample magnetometer of the Krasnoyarsk Regional Center for Collective Use, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences . - ISSN 1063-7850
Кл.слова (ненормированные):
high-temperature superconductor -- green phase -- superconducting layer
Аннотация: An alternative technique for synthesizing high-temperature superconductor samples is proposed, in which superconducting layers should form on the surface of hard-melting Ho2BaCuO5 green phase grains immersed in the liquid phase BaCuO2 + CuO.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ

Публикация на русском языке Формирование высокотемпературных сверхпроводящих слоев на границах несверхпроводящих фаз [Текст] / М. И. Петров, С. И. Попков, К. Ю. Терентьев, А. Д. Васильев // Письма в Журн. техн. физ. - 2020. - Т. 46 Вып. 20. - С. 11-14

Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Petrov, M. I.; Петров, Михаил Иванович; Popkov, S. I.; Попков, Сергей Иванович; Terent'ev, K. Yu.; Терентьев, Константин Юрьевич; Vasil'ev, A. D.; Васильев, Александр Дмитриевич
}
Найти похожие

    Intrinsic isotropic near-zero thermal expansion in Zn4B6O12X (X = O, S, Se) / Y. Q. Liu, D. J. Mei, N. Z. Wang [et al.] // ACS Appl. Mater. Interfaces. - 2020. - Vol. 12, Is. 34. - P. 38435-38440, DOI 10.1021/acsami.0c12351. - Cited References: 43. - This work was supported by the National Scientific Foundations of China (Grants 51872297, 51702330, 11974360, 51972208, 51890864, and 51802321), Russian Foundation for Basic Research (Grant 17-52-53031), and Fujian Institute of Innovation (FJCXY18010201) in CAS. X.J. acknowledges the support from the Youth Innovation Promotion Association in CAS (Grant 2017035) and Youth Talent Promotion Project from China Association for Science and Technology . - ISSN 1944-8244. - ISSN 1944-8252
   Перевод заглавия: Близкое к нулю изотропное тепловое расширение в Zn4B6O12X (X = O, S, Se)

РУБ Nanoscience & Nanotechnology + Materials Science, Multidisciplinary
Рубрики:
CRYSTAL
Кл.слова (ненормированные):
intrinsic isotropic zero thermal expansion -- phonon mode -- first-principals vibration analysis -- borate -- sodalite cage structure
Аннотация: Zero thermal expansion (ZTE) materials, keeping size constant as temperature varies, are valuable for resisting the deterioration of the performance from environmental temperature fluctuation, but they are rarely discovered due to the counterintuitive temperature-size effect. Herein, we demonstrate that a family of borates with sodalite cage structure, Zn4B6O12X (X = O, S, Se), exhibits intrinsic isotropic near-ZTE behaviors from 5 to 300 K. The very low thermal expansion is mainly owing to the coupling rotation of [BO4] rigid groups constrained by the bonds between Zn and cage-edged O atoms, while the central atoms in the cage have a negligible contribution. Our study has significant implications on the understanding of the ZTE mechanism and exploration of new ZTE materials.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Держатели документа:
Chinese Acad Sci, Tech Inst Phys & Chem, Beijing 100190, Peoples R China.
Univ Chinese Acad Sci, Beijing 100049, Peoples R China.
Shanghai Univ Engn Sci, Coll Chem & Chem Engn, Shanghai 201620, Peoples R China.
Fed Res Ctr KSC SB RAS, Lab Crystal Phys, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Far Eastern State Transport Univ, Dept Phys, Khabarovsk 680021, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Liu, Youquan; Mei, Dajiang; Wang, Naizheng; Molokeev, M. S.; Молокеев, Максим Сергеевич; Jiang, Xingxing; Lin, Zheshuai
}
Найти похожие

A Bandpass Filter Based on Dielectric Layers with a Strip Conductor Subwavelength Grating at Their Interfaces / B. A. Belyaev, V. V. Tyurnev, A. S. Voloshin [et al.] // Dokl. Phys. - 2020. - Vol. 65, Is. 9. - P. 343-348, DOI 10.1134/S1028335820090013. - Cited References: 12. - This study was supported by the Ministry of Science and Higher Education of the Russian Federation, state assignment no. FEFE-2020-0013 “Development of the Theory of Self-Configurable Machine-Learning Algorithms for Simulating and Predicting Characteristics of Complex Systems” . - ISSN 1028-3358
Кл.слова (ненормированные):
frequency response -- return loss -- passband filter -- insertion loss
Аннотация: The design of a multilayer bandpass filter has been investigated, in which each of the half-wavelength resonators consists of two dielectric layers with outer strip conductor gratings in the form of square grids and inner ones in the form of square patches. The grids serve as mirrors with specified reflective properties, which ensure optimal couplings of the outer resonators with free space and optimal coupling between the resonators. The patch gratings make it possible to tune the resonator eigenfrequency during the filter synthesis. The efficiency of the quasi-static calculation of the frequency response for the layered structure is shown for the case of a lattice period smaller than the wavelength in the dielectric and much smaller than the layer thickness. Since the calculation does not require much computing power, the parametric synthesis of the device can be performed on a conventional personal computer. The measured characteristics of the prototype of the synthesized third-order filter with a fractional passband width of ∼10% and a central passband frequency of ∼10.6 GHz are in good agreement with the calculation. The proposed design allows one to fabricate multilayer panels radio transparent in a certain frequency band for hiding microwave antennas.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ

Публикация на русском языке Полосно-пропускающий фильтр из диэлектрических слоев с субволновыми решетками полосковых проводников на границах [Текст] / Б. А. Беляев, В. В. Тюрнев, А. С. Волошин [и др.] // Доклады Академии наук. Физика, технические науки. - 2020. - Т. 494 № 1. - С. 75-81

Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Siberian State University of Science and Technology, Krasnoyarsk, 660014, Russian Federation

Доп.точки доступа:
Belyaev, B. A.; Беляев, Борис Афанасьевич; Tyurnev, V. V.; Тюрнев, Владимир Вениаминович; Voloshin, A. S.; Волошин, Александр Сергеевич; Leksikov, An. A.; Лексиков, Андрей Александрович; Galeev, R. G.; Shabanov, V. F.; Шабанов, Василий Филиппович
}
Найти похожие

Effect of interfaces in the multilayer structures on the electronic states / S. G. Ovchinnikov, O. A. Maximova, S. A. Lyashchenko [et al.] // International workshop on the properties of functional MAX-materials (2nd FunMax) : book of abstracts / org. com. M. Farle [et al.]. - 2021. - P. 15

Материалы конференции,
Читать в сети ИФ

Доп.точки доступа:
Farle, M. \org. com.\; Ovchinnikov, S. G. \org. com.\; Овчинников, Сергей Геннадьевич; Tarasov, A. S. \org. com.\; Тарасов, Антон Сергеевич; Smolyarova, T. E. \org. com.\; Смолярова, Татьяна Евгеньевна; Ovchinnikov, S. G.; Maximova, O. A.; Максимова, Ольга Александровна; Lyashchenko, S. A.; Лященко, Сергей Александрович; Yakovlev, I. A.; Яковлев, Иван Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; International workshop on functional MAX-materials(2 ; 2021 ; Sept. 14-17 ; Krasnoyarsk (on-line)); Kirensky Institute of Physics; Siberian Federal Univercity
}
Найти похожие

Structural, optical, and electronic properties of Cu-doped TiNxOy grown by ammonothermal atomic layer deposition / F. A. Baron, Y. L. Mikhlin, M. S. Molokeev [et al.] // ACS Appl. Mater. Interfaces. - 2021. - Vol. 13, Is. 27. - P. 32531-32541, DOI 10.1021/acsami.1c08036. - Cited References: 69. - This research was funded by the RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science (project code 20-42-240013) and by the grant of the Government of the Russian Federation for Creation of World Tier Laboratories (contract no. 075-15-2019-1886) . - ISSN 1944-8244. - ISSN 1944-8252

РУБ Nanoscience & Nanotechnology + Materials Science, Multidisciplinary
Рубрики:
OXYNITRIDE THIN-FILMS
TITANIUM-NITRIDE
CONFORMAL TIN
Кл.слова (ненормированные):
atomic layer deposition -- titanium oxynitride -- copper doping -- surface segregation -- thin film
Аннотация: Copper-doped titanium oxynitride (TiNxOy) thin films were grown by atomic layer deposition (ALD) using the TiCl4 precursor, NH3, and O2 at 420 °C. Forming gas was used to reduce the background oxygen concentration and to transfer the copper atoms in an ALD chamber prior to the growth initiation of Cu-doped TiNxOy. Such forming gas-mediated Cu-doping of TiNxOy films had a pronounced effect on their resistivity, which dropped from 484 ± 8 to 202 ± 4 μΩ cm, and also on the resistance temperature coefficient (TCR), which decreased from 1000 to 150 ppm °C–1. We explored physical mechanisms causing this reduction by performing comparative analysis of atomic force microscopy, X-ray photoemission spectroscopy, X-ray diffraction, optical spectra, low-temperature transport, and Hall measurement data for the samples grown with and without forming gas doping. The difference in the oxygen concentration between the films did not exceed 6%. Copper segregated to the TiNxOy surface where its concentration reached 0.72%, but its penetration depth was less than 10 nm. Pronounced effects of the copper doping by forming gas included the TiNxOy film crystallite average size decrease from 57–59 to 32–34 nm, considerably finer surface granularity, electron concentration increase from 2.2(3) × 1022 to 3.5(1) × 1022 cm–3, and the electron mobility improvement from 0.56(4) to 0.92(2) cm2 V–1 s–1. The DC resistivity versus temperature R(T) measurements from 4.2 to 300 K showed a Cu-induced phase transition from a disordered to semimetallic state. The resistivity of Cu-doped TiNxOy films decreased with the temperature increase at low temperatures and reached the minimum near T = 50 K revealing signatures of the quantum interference effects similar to 2D Cu thin films, and then, semimetallic behavior was observed at higher temperatures. In TiNxOy films grown without forming gas, the resistivity decreased with the temperature increase as R(T) = – 1.88T0.6 + 604 μΩ cm with no semimetallic behavior observed. The medium range resistivity and low TCR of Cu-doped TiNxOy make this material an attractive choice for improved matching resistors in RF analog circuits and Si complementary metal–oxide–semiconductor integrated circuits.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Держатели документа:
KSC SB RAS, Inst Chem & Chem Technol, Fed Res Ctr, Krasnoyarsk 660036, Russia.
KSC SB RAS, Kirensky Inst Phys, Fed Res Ctr, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Reshetnev Siberian State Univ Sci & Technol, Krasnoyarsk 660037, Russia.

Доп.точки доступа:
Baron, F. A.; Барон, Филипп Алексеевич; Mikhlin, Yurii L.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Rautskiy, M. V.; Рауцкий, Михаил Владимирович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Shanidze, L. V.; Шанидзе, Лев Викторович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Smolyarova, T. E.; Смолярова, Татьяна Евгеньевна; Konovalov, Stepan O.; Zelenov, Fyodor, V; Tarasov, A. S.; Тарасов, Антон Сергеевич; Volkov, N. V.; Волков, Никита Валентинович; RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-240013]; Government of the Russian Federation for Creation of World Tier Laboratories [075-15-2019-1886]
}
Найти похожие

Avramov, P. V.
The role of interfaces in determination of electronic properties of complex silicon nanoclusters / P. V. Avramov // Workshop "Trends in Nanomechanics and Nanoengineering" : book of abstracts / предс. сем. K. S. Aleksandrov ; зам. предс. сем.: G. S. Patrin, S. G. Ovchinnikov ; чл. лок. ком.: N. N. Kosyrev, A. S. Fedorov [et al]. - 2009. - P. 11

Материалы семинара

Доп.точки доступа:
Aleksandrov, K. S. \предс. сем.\; Александров, Кирилл Сергеевич; Patrin, G. S. \зам. предс. сем.\; Патрин, Геннадий Семёнович; Ovchinnikov, S. G. \зам. предс. сем.\; Овчинников, Сергей Геннадьевич; Kosyrev, N. N. \чл. лок. ком.\; Косырев, Николай Николаевич; Fedorov, A. S. \чл. лок. ком.\; Федоров, Александр Семенович; Аврамов, Павел Вениаминович; "Trends in Nanomechanics and Nanoengineering", workshop(2009 ; Aug. ; 24-28 ; Krasnoyarsk); Сибирский федеральный университет; Институт физики им. Л.В. Киренского Сибирского отделения РАН
}
Найти похожие

The direct exchange mechanism of induced spin polarization of low-dimensional π-conjugated carbon- and h-BN fragments at LSMO(001) MnO-terminated interfaces / A. V. Kuklin [et al.] // J. Magn. Magn. Mater. - 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P. 23-29, DOI 10.1016/j.jmmm.2016.12.096. - Cited References:70. - We acknowledge the Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk; the Joint Supercomputer Center of RAS, Moscow and the ICC of Novosibirsk State University for providing the computing resources. Russian Science Foundation (Grant No 14-13-00139) supported the work of Russian team. . - ISSN 0304-8853. - ISSN 1873-4766

РУБ Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
HEXAGONAL BORON-NITRIDE
   THIN-FILMS
   GIANT MAGNETORESISTANCE
   METALLIC
Кл.слова (ненормированные):
Graphene nanoribbons -- DFT -- LSMO thin films -- Induced spin polarization -- h-BN nanoribbons -- Half-metal
Аннотация: Induced spin polarization of π-conjugated carbon and h-BN low dimensional fragments at the interfaces formed by deposition of pentacene molecule and narrow zigzag graphene and h-BN nanoribbons on MnO2-terminated LSMO(001) thin film was studied using GGA PBE+U PAW D3-corrected approach. Induced spin polarization of π-conjugated low-dimensional fragments is caused by direct exchange with Mn ions of LSMO(001) MnO-derived surface. Due to direct exchange, the pentacene molecule changes its diamagnetic narrow-band gap semiconducting nature to the ferromagnetic semiconducting state with 0.15 eV energy shift between spin-up and spin-down valence bands and total magnetic moment of 0.11 μB. Direct exchange converts graphene nanoribbon to 100% spin-polarized half-metal with large amplitude of spin-up electronic density at the Fermi level. The direct exchange narrows the h-BN nanoribbon band gap from 4.04 to 1.72 eV in spin-up channel and converts the h-BN ribbon semiconducting diamagnetic nature to a semiconducting magnetic one. The electronic structure calculations demonstrate a possibility to control the spin properties of low-dimensional π-conjugated carbon and h-BN fragments by direct exchange with MnO-derived LSMO(001) surface for spin-related applications.

Смотреть статью,
WOS,
Читать в сети ИФ

Доп.точки доступа:
Kuklin, A. V.; Kuzubov, A. A.; Кузубов, Александр Александрович; Kovaleva, E. A.; Ковалева, Евгения Андреевна; Lee, Hyosun; Sorokin, Pavel B.; Sakai, Seiji; Entani, Shiro; Naramoto, Hiroshi; Avramov, P. V.; Аврамов, Павел Вениаминович; Russian Science Foundation [14-13-00139]; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН
}
Найти похожие

Magnetic resonance studies of three-layer FeNi/Bi/FeNi films / K. G. Patrin [et al.] // J. Exp. Theor. Phys. - 2017. - Vol. 124, Is. 5. - P. 779-785, DOI 10.1134/S1063776117040069. - Cited References: 28 . - ISSN 1063-7761
Кл.слова (ненормированные):
Anisotropy -- Binary alloys -- Ferromagnetic resonance -- Interface states -- Interfaces (materials) -- Iron alloys -- Magnetic resonance -- Magnetism -- Nickel alloys -- Electron magnetic resonance -- Film structure -- Interface anisotropy -- Interlayer coupling -- Magnetic state -- Temperature dependence -- Three-layer -- Magnetic anisotropy
Аннотация: The interlayer coupling in three-layer FeNi/Bi/FeNi films is studied by electron magnetic resonance. The magnetic anisotropy at the permalloy–bismuth interface is shown to play a significant role in the formation of the magnetic state of the film structure. The interlayer coupling oscillation period is found to be about 8 nm. The interlayer coupling and the interface anisotropy and their temperature dependences are determined. © 2017, Pleiades Publishing, Inc.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ

Публикация на русском языке Магниторезонансные исследования трехслойных пленок FeNi/Bi/FeNi [Текст] / К. Г. Патрин [и др.] // Журн. эксперим. и теор. физ. : Наука, 2017. - Т. 151 Вып. 5. - С. 916–923

Держатели документа:
Siberian Federal University, Krasnoyarsk, Russian Federation
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Patrin, K. G.; Патрин, Константин Геннадьевич; Yarikov, S. A.; Patrin, G. S.; Yakovchuk, V. Yu.; Яковчук, Виктор Юрьевич; Lyamkin, A. I.
}
Найти похожие

    Superconductivity on interfaces of nonsuperconducting granules La2CuO4 and La1.56Sr0.44CuO4 / A. A. Bykov [et al.] // J. Supercond. Nov. Magn. - 2018. - Vol. 31, Is. 12. - P. 3867–3874, DOI 10.1007/s10948-018-4668-x. - Cited References: 19. - The authors are grateful to D.A. Balaev for fruitful discussions, and I.V. Nemtsev for electronic microscope measurements in the center for shared use, KSC SB RAS. The work is supported by the Russian Science Foundation (project No. 17-72-10067). . - ISSN 1557-1939
   Перевод заглавия: Сверхпроводимость на интерфейсах несверхпроводящих гранул La2CuO4 и La1.56Sr0.44CuO4
Кл.слова (ненормированные):
Magnetic properties -- Superconductivity -- Oxide superconductors -- Grain boundaries -- LCO -- LSCO -- Josephson media
Аннотация: Composite materials fabricated by annealing of nonsuperconducting ceramics La2CuO4 and La1.56Sr0.44CuO4 at 910 °C during various time are investigated. Areas of superconducting La1.85Sr0.15CuO4 phase arises at boundaries of contacting nonsuperconducting granules. The volume fraction of the superconducting phase increases with increasing annealing time. A model describing the magnetic and transport properties of the samples at low magnetic fields is constructed. The magnetotransport characteristics of obtained samples at low magnetic fields (∼ 100 Oe) are defined by weak links network formed by superconducting areas. At high fields, behavior of the system is defined by a magnetization of the disconnected superconducting islands. The average size of the superconducting areas has been estimated from an extended critical state model.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Держатели документа:
Petersburg Nuclear Physics Institute named by B.P. Konstantinov of National Research Centre “Kurchatov Institute”, Gatchina, 1, mkr., Orlova roshcha, Russian Federation
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
Siberian Federal University, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Bykov, A. A.; Terent'ev, K. Yu.; Терентьев, Константин Юрьевич; Gokhfeld, D. M.; Гохфельд, Денис Михайлович; Savitskaya, N. E.; Popkov, S. I.; Попков, Сергей Иванович; Petrov, M. I.; Петров, Михаил Иванович
}
Найти похожие

10.

    Two-dimensional-layered perovskite ALaTa2O7:Bi3+ (A = K and Na) phosphors with versatile structures and tunable photoluminescence / G. J. Zhou [et al.] // ACS Appl. Mater. Interfaces. - 2018. - Vol. 10, Is. 29. - P. 24648-24655, DOI 10.1021/acsami.8b08129. - Cited References: 48. - The authors acknowledge the support from the National Natural Science Foundation of China (Nos. 51722202, 91622125, and 51572023) and the Natural Science Foundations of Beijing (2172036) and RFBR (17-52-53031). . - ISSN 1944-8244
   Перевод заглавия: 2D-слоистые перовскитоподобные люминофоры ALaTa2O7:Bi3+ (A = K and Na) с разнообразными структурами и управляемой люминесценцией.

РУБ Nanoscience & Nanotechnology + Materials Science, Multidisciplinary
Рубрики:
GENERALIZED GRADIENT APPROXIMATION
YELLOW-EMITTING PHOSPHOR
Кл.слова (ненормированные):
2D-layered perovskite -- Bi3+ emission -- ion exchange -- photoluminescence tuning -- white light LEDs
Аннотация: Topological chemical reaction methods are indispensable for fabricating new materials or optimizing their functional properties, which is particularly important for two-dimensional (2D)-layered compounds with versatile structures. Herein, we demonstrate a low-temperature (∼350 °C) ion exchange approach to prefabricate metastable phosphors ALa1–xTa2O7:xBi3+ (A = K and Na) with RbLa1–xTa2O7:xBi3+ serving as precursors. The as-prepared ALa0.98Ta2O7:0.02 Bi3+ (A = Rb, K, and Na) share the same Dion–Jacobson type 2D-layered perovskite phase, and photoluminescence analyses show that ALa0.98Ta2O7:0.02 Bi3+ (A = Rb, K, and Na) phosphors exhibit broad emission bands peaking at 540, 550, and 510 nm, respectively, which are attributed to the nonradiative transition of Bi3+ from excited state 3P1 or 3P0 to ground state 1S0. The various Bi3+ local environments at the crystallographic sites enable the different distributions of emission and excitation spectra, and the photoluminescence tuning of ALa0.98Ta2O7:0.02 Bi3+ (A = Rb, K, and Na) phosphors are realized through alkali metal ion exchange. Notably, the combination of superior trivalent bismuth emission and low-temperature ion exchange synthesis leads to a novel yellow-emitting K(La0.98Bi0.02)Ta2O7 phosphor which is successfully applied in a white LED device based on a commercially available 365 nm LED chip. Our realizable cases of this low-temperature ion exchange strategy could promote exploration into metastable phosphors with intriguing properties.

Смотреть статью,
WOS,
Читать в сети ИФ
Держатели документа:
Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R China.
Chinese Acad Sci, Tech Inst Phys & Chem, Beijing 100190, Peoples R China.
Univ Chinese Acad Sci, Beijing 100049, Peoples R China.
SB RAS, KSC, Fed Res Ctr, Kirensky Inst Phys,Lab Crystal Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Far Eastern State Transport Univ, Dept Phys, Khabarovsk 680021, Russia.

Доп.точки доступа:
Zhou, Guojun; Jiang, Xingxing; Zhao, Jing; Molokeev, M. S.; Молокеев, Максим Сергеевич; Lin, Zheshuai; Liu, Quanlin; Xia, Zhiguo
}
Найти похожие